Method and device for producing disilane through reaction of alloyed composition and ammonium chloride in liquid ammonia

A technology of alloying and compounding, applied in the direction of silicon hydride, etc., can solve the problems of difficult production of monosilane, limited practicality, high alloying temperature, etc., and achieve the effects of high yield, improved production efficiency, and low energy consumption
CN102936014AActive Publication Date: 2013-02-20烟台万华电子材料有限公司
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
烟台万华电子材料有限公司
Publication Date
2013-02-20

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Abstract

The invention provide a method and a device used for producing disilane through a chemical reaction of alloyed hydrogen-metal-silicon composition ammonium chloride in a liquid ammonia medium. According to the invention, hydrogen-metal-silicon composition and a corresponding alloying process are promoted; the composition is subjected to the chemical reaction with ammonium chloride in the liquid ammonia medium, such that monosilane and disilane are produced; monosilane is outputted under the control of a reflux monosilane absorption converter, and crude disilane is subjected to separation purification, such that high-yield disilane is prepared. The hydrogen-metal-silicon composition is composed of Si, H, and at least two components selected from: Mg, Ca, Sr, Ba, Li, Na, K, B, Al, Ti, Fe, and V. The composition is synthesized through a mechanical process, a thermo-mechanical process, or a mechanical chemical bonding process, and is subjected to heat treatment alloying, such that the composition can be utilized.
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Description

technical field

[0001] The invention belongs to the field of gas production, and relates to an alloying process of a hydrogen-metal-silicon compound and produces monosilane (SiH 4 ), disilane (Si 2 h 6 ), trisilane (Si 3 h 8 ) and other methods are especially suitable for the production of disilane. technical background

[0002] Disilane is a promising silicon membrane precursor. Compared with monosilane, it has the advantages of fast deposition speed, low temperature requirement, and high film uniformity, and is one of the attractive special gases in the semiconductor industry. However, the existing preparation methods of disilane are mainly due to low yield, many by-products, high production cost due to expensive equipment, or unrealistic large-scale production due to the limitation of the amount of raw materials. Among them, the reaction product of magnesium silicide and ammonium chloride in liquid ammonia is mostly monosilane, and less than 2% of disilane can only ...

Claims

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