101 results about "Alternative process" patented technology

Recesses in a semiconductor structure are selectively plated by providing electrical insulating layer over the semiconductor substrate and in the recesses followed by forming a conductive barrier over the insulating layer; providing a plating seed layer over the barrier layer; depositing and patterning a photoresist layer over the plating seed layer; planarizing the insulated horizontal portions by removing the horizontal portions of the seed layer between the recesses; removing the photoresist remaining in the recesses; and then electroplating the patterned seed layer with a conductive metal using the barrier layer to carry the current during the electroplating to thereby only plate on the seed layer. In an alternative process, a barrier film is deposited over recesses in an insulator. Then, relatively thick resists are lithographically defined on the field regions, on top of the barrier film over the recesses. A plating base or seedlayer is deposited, so as to be continuous on the horizontal regions of the recesses in the insulator, but discontinuous on their surround wall. The recesses are then plated using the barrier film without seedlayers at the periphery of the substrate wafers for electrical contact. After electroplating, the resist is removed by lift-off process and exposed barrier film is etched by RIE method or by CMP. Also provided is a semiconductor structure obtained by the above processes.

The present invention relates to a process for the pretreatment of heavy oils using a catalytic hydrotreating process prior to introduction to a refinery. More specifically, the invention relates to the use of an HDM reactor and an HDS reactor in order to improve the characteristics of the heavy oil, such that when the oil is introduced into the refinery, the refinery can achieve improved throughputs, increased catalysts life, increased life cycles, and a reduction in overall operation costs.

An article comprising a silicon-containing substrate, an environmental barrier coating (EBC) overlying the substrate, wherein the EBC comprises a higher metal silicate-containing outer barrier layer; and a corrosion resistant alumina/aluminate sealant for the higher metal silicate-containing outer barrier layer. A process is also provided for forming a corrosion resistant alumina/aluminate sealant layer over the higher metal silicate-containing outer barrier layer. Also provided is an alternative process for treating a porous higher metal silicate-containing outer barrier layer with a liquid composition comprising an corrosion resistant alumina/aluminate sealant precursor to infiltrate the porous higher metal silicate-containing outer barrier layer with the alumina/aluminate sealant precursor in an amount sufficient to provide, when converted to the corrosion resistant alumina/aluminate sealant, protection of the environmental barrier coating against environmental attack; and converting the infiltrated alumina/aluminate sealant precursor within the porous higher metal silicate-containing outer barrier layer to the corrosion resistant alumina/aluminate sealant.

A semiconductor device is fabricated by providing a substrate, and providing a dielectric layer on the substrate. A polysilicon body is formed on the dielectric layer, and a metal layer is provided on the polysilicon body. A silicidation process is undertaken to silicidize substantially the entire polysilicon body to form a gate on the dielectric. In an alternative process, a cap layer is provided on the polysilicon body, which cap layer is removed prior to the silicidation process. The polysilicon body is doped with a chosen specie prior to the silicidation process, which dopant, during the silicidation process, is driven toward the dielectric layer to form a gate portion having a high concentration thereof adjacent the dielectric, the type and concentration of this specie being instrumental in determining the work function of the formed gate.

A process for producing a tire having an expandable chamber utilized for extending and retracting studs provided in the periphery of the tire. In one embodiment, a non-stick film is strategically positioned between the casing and the tread prior to curing the tread onto the casing. The interface at either side of the film forms the sides of an expandable chamber. The tread side of the chamber is inset and studs are affixed thereto. Expansion of the chamber extends the studs out of the inset and into engagement with a road surface. Alternative processes provide a channel in the tread and the expansion chamber formed in the channel.

Embodiments of the invention are directed to systems and methods for stand-in processing using data driven capabilities. Transaction activity of an issuer may be monitored to detect a major incident and to automatically invoke stand-in processing. By modeling each individual account holder's behavior, improved authorization outcomes may be provided by a payment processing network during stand-in processing.

A method and system referred to as PALM (Patterning by Adhesive of Large Relief Three-Dimensional Microstructures) with large reliefs exceeding 1 μm and being as large as 100 μm. The microstructures can be either deterministic (such as microprisms), or random (such as diffusers), the first obtained by copying an original supermaster, and latter obtained by copying a laser speckle pattern. The master process entails copying a supermaster into the form of the microstructure constituting a pattern on the patterning cylinder (called a drum), to be then continuously multiplied in the PALM system, in a continuous roll-to-roll web process. The latter method, together with the related system, is the subject of this invention. The rolls continuously repeat the master pattern, copying by adhesive with large viscosity on acrylic (hybrid) as well as by a monolithic process. The monolithic process can be accomplished using temperature and pressure, or by UV-cured polymerization. Therefore, the invention comprises three alternative processes: one, hybrid (adhesive on acrylic), and two monolithic ones. In the PALM (hybrid) process, an epoxy is wet-coated on film substrates such as polycarbonate (PC), polyester (PET), (PE), or other flexible material. The adhesive, in liquid form, is applied to the substrate by a self-metered coating sub-process. In the present invention, the adhesive is used for forming the microstructure pattern. The microstructure pattern is replicated from a master roll or image drum onto a coating roll.

An improved process for the preparation of 2′-modified nucleosides and 2′-deoxy-nucleosides, such as, β-L-2′-deoxy-thymidine (LdT), is provided. In particular, the improved process is directed to the synthesis of a 2′-deoxynucleoside that may utilize different starting materials but that proceeds via a chloro-sugar intermediate or via a 2,2′-anhydro-1-furanosyl-nucleobase intermediate. Where an 2,2′-anhydro-1-furanosyl base intermediate is utilized, a reducing agent, such as Red-Al, and a sequestering agent, such as 15-crown-5 ether, that cause an intramolecular displacement reaction and formation of the desired nucleoside product in good yields are employed. An alternative process of the present invention utilizes a 2,2′-anhydro-1-furanosyl base intermediate without a sequestering agent to afford 2′-deoxynucleosides in good yields. The compounds made according to the present invention may be used as intermediates in the preparation of other nucleoside analogues, or may be used directly as antiviral and/or antineoplastic agents.

When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.

The invention relates to an asymmetric multi-workshop integrated dispatching method with consideration of a same-kind-of-equipment process. The method comprises: all leaf nodes are added to an alternative process set; a planned dispatching process is determined from the alternative process set according to a method of selecting a long-path process and a short-time process preferably; a processing equipment type of the planned dispatching process is determined; a process identical with the processing equipment of the planned dispatching process is searched in the alternative process set; a planned dispatching process set is formed by a same-equipment process; a practical dispatching process set is determined based on a method of same-kind-of-equipment process long-path optimization method; and then according to a multi-workshop process group dispatching balancing method, processes in the practical dispatching process set are distributed to proper processing workshops, the processes in the practical dispatching process set are dispatched successively according to a descending path length order, and the process is placed into a workshop enabling a transferring frequency to be reduced preferably, so that the workshop parallelism and balancing can be improved. Therefore, the method can be applied to integrated asymmetric multi-workshop dispatching of single complex products.

The invention discloses a substitutive treatment agent for metal surface phosphating and a preparation method thereof, and relates to the metal surface treatment technology. The substitutive treatment agent for phosphating consists of the following components of: gamma-APS, anhydrous alcohol, fluozirconate and de-ionized water, wherein the substitutive treatment agent for phosphating consisting of the components is a silane and nanoceramic composite film; the preparation method for the silane and nanoceramic composite film which consists of the components and is used for pre-treating the metal surface comprises the following steps of: rinsing with hot water; degreasing in advance; rinsing for the first time; rinsing for the second time; rinsing for the third time; performing phosphate-free conversion; rinsing a straight bar; rinsing for the fourth time; rinsing for the fifth time; and finishing the preparation. The substitutive treatment agent and the preparation method have the advantages that: the silane and nanoceramic composite film does not rust in 48 hours after being formed on the metal surface of a cold rolled steel sheet and the like and naturally cooled so as to meet the requirement on corrosion resistance in the production process; and meanwhile, the composite silane film has high bonding force with polyester coating layers, the cross-cut test for the adhesion reaches the first grade, the comprehensive impact resistance reaches 50cm/kg, the bending resistance is less than 1mm, and the salt spray test is more than or equal to 500 hours.

Handling or removal of a pair of defibrillator electrode pads from their package is detected in order to effectively time the issuance of prompts to guide the user. One plate of a capacitor is embedded in the package, the electrode pads and lead wires serving as the other plate. Impedance across the capacitor in an alternating current circuit is monitored to detect an increase in the distance between the pads and the package. The impedance level is determined, in a low-cost hardware solution, by rectifying and then integrating an output voltage of the capacitor to produce a voltage signal whose magnitude attenuates as the pads arc handled or removed. In one embodiment, the above methodology is time-division multiplexed with an alternative process that identifies handling or removal based on pad-to-pad impedance. In a further embodiment, the capacitive configuration is replaced with an inductive one.

An image forming apparatus capable of being used for a longest possible time period without the need for a user to determine the necessity of part replacement. In a case that a conveyance roller or other part whose consumption degree exceeds a prescribed value is used for a job set by the user, an MFP displays to the user candidates for alternative process using an alternative path in which the conveyance roller or other part is not used and a candidate for alternative process to perform a low-speed process (S702 to S704). The candidates for alternative paths are selected based on weight information set in such a manner that alternative paths are selected in an ascending order of jam occurrence rate acquired from a monitoring server.

The present invention relates to a method for generating incremental document after edition of electronic document, wherein the method comprises the following steps: reading the data from a reference document into an internal memory and dividing; calculating the index value corresponding with the divided reference data block and relating; sequentially reading the edited data block into the internal memory and calculating the corresponding index value; comparing the index value corresponding with the reference data block with the index value corresponding with the data block after editing, if the two index value are matching with each other, writing the matching position of reference document and matching mark into the incremental document, and otherwise writing the unmatched segment in the document after editing, the unmatched length and the unmatched mark into the incremental document. The invention also relates to a method for recovering the document after editing according to incremental document. The invention generates the incremental document through establishing a mapping relationship between two documents before and after editing and according to the recorded mapping relationship. The incremental document only requires processing for substituting the document after editing in the aspects of data storing, filing, backup, etc. for further reducing the storing burden or network transmission burden.

The invention provides a method for manufacturing a semiconductor device, comprising the following steps of: firstly forming a false gate stack and a side wall thereof, a source electrode region and a drain electrode region by utilizing a gate alternative process; annealing the source electrode region and the drain electrode region, and then removing the false gate stack; carrying out basically vertical ion co-implantation and/or slant ion co-implantation on a substrate to form a steep inverted dopant well in the substrate positioned below an opening and/or respectively form ion implantation regions near the source electrode region and the drain electrode region by utilizing the opening formed by removing the false gate stack, and then annealing the semiconductor device to activate doping; and depositing a gate dielectric layer and a metal gate electrode in the opening. Thus, the increase of tape-to-tape leakage currents and source drain junction capacitances of an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device are inhibited and the breakdown of a source electrode and a drain electrode is prevented, thereby the performance of the semiconductor device is improved.

The invention discloses a machining process chain optimization method for energy efficiency improvement. The method includes the steps that an energy consumption analysis model is established, on the basis of the model, energy consumption bottleneck processes are recognized from all processes forming process chains, and then machining process feature sets corresponding to the energy consumption bottleneck processes are determined respectively; replaceable machining process features are found out and configured to be the machining processes which are relatively lower in energy consumption, and therefore a series of alternative process chains are generated; optimization processing is conducted on the alternative process chains by the adoption of the entropy weight method and the multi-attribute decision method, the process chain with the optimal energy efficiency is selected to serve as an optimization result, and therefore the whole optimization process of the machining process chain is completed. According to the method, the machining process chain with optimal energy efficiency performance can be obtained, meanwhile the machining efficiency is greatly improved, the workpiece machining period is shortened, the product cost is lowered, and therefore the method is particularly suitable for the occasions of precision machining or industrial machining of various workpieces.