Copper plating solution for embedding fine wiring, and copper plating method using the same

a technology of fine wiring and copper plating solution, which is applied in the direction of basic electric elements, electrical equipment, semiconductor devices, etc., can solve the problems that the copper plating solution may not be uniformly plated with the copper sulfate solution, and the copper plating solution is not suitable for filling the fine gaps between the wiring patterns. , defects, voids and seams
US20030085133A1Inactive Publication Date: 2003-05-08ELECTROPLATING ENGINEERS OF JAPAN LTD
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
ELECTROPLATING ENGINEERS OF JAPAN LTD
Publication Date
2003-05-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention provides a copper plating solution for embedding fine wiring, wherein it contains copper sulfate at 100 to 300 g / L as copper sulfate pentahydrate, sulfuric acid at 5 to 300 g / L, chlorine at 20 to 200 mg / L, a macromolecular surfactant at 0.05 to 20 g / L for controlling the electrodeposition reaction, sulfur-based saturated organic compound at 1 to 100 mg / L for accelerating the electrodeposition reaction, leveling agent composed of a macromolecular amine compound at 0.01 to 10 mg / L and reductant at 0.025 to 25 g / L for stabilizing the copper plating solution. The copper plating solution of the present invention for embedding fine wiring can plate the wafer surface provided with fine wiring patterns with sub-micron order gaps in-between and coated with copper serving as the metallic seed film, to fill the gaps neither leaving any defect therein nor dissolving the metallic seed film.
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Description

[0001] 1. Field of the Invention

[0002] The present invention relates to a plating treatment technique for the surface of a wafer as an electronic device, more particularly to a plating solution of copper sulfate for embedding copper by plating on the wafer surface on which fine wiring patterns with sub-micron order gaps in-between are formed.

[0003] 2. Description of the Related Art

[0004] Recently, the fine processing techniques for a wafer as an electronic device have made rapid progress, and the plating techniques for processing wafers have been also extensively under development. The plating techniques for processing wafers include copper plating based on electrolysis, and the representative electrolytic plating solution includes strongly acidic solutions of copper sulfate, and alkaline solutions of cyan- and pyrophosphoric acid-based ones. Among these plating solutions, a strongly acidic solution of copper sulfate has been widely used, because it can be more easily managed and co...

Claims

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