Polishing mattress and multilayer polishing mattress

A polishing pad and polishing layer technology, which is applied in the direction of electrical components, circuits, abrasives, etc., can solve the problems of not being able to suppress clogging, not being able to uniformly distribute the slurry, and not being able to increase the polishing speed, so as to achieve excellent flatness, scratch suppression, and effective polishing Effect

Inactive Publication Date: 2004-05-12
JSR CORPORATIOON
View PDF7 Cites 33 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But even if these technologies are adopted, it is often impossible to suppress the clogging of the pores by abrasives and polishing debris in the slurry during polishing, and the clogging of the pores cannot be suppressed after dressing (dressing), and the polishing speed cannot be sufficiently increased by it.
In addition, sometimes the slurry cannot be uniformly distributed on the polishing pad, so the polishing speed cannot be fully increased, and a sufficiently uniform polishing surface is often not obtained.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing mattress and multilayer polishing mattress
  • Polishing mattress and multilayer polishing mattress
  • Polishing mattress and multilayer polishing mattress

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0128] Using a screw extruder temperature adjusted to 160°C, 80 parts by volume of 1,2-polybutadiene (manufactured by JSR Corporation, trade name "JSR RB830") forming a cross-linked water-insoluble matrix and 20 parts by volume of β-Cyclodextrin (manufactured by Yokohama International Institute of Biological Research Co., Ltd., trade name "Dexipearl β-100", average particle diameter: 20 µm) which itself is water-soluble particles was kneaded to obtain white particles. Then add 0.3 parts by volume of an organic peroxide (manufactured by NOF Co., Ltd., trade name "Percumyl D-40"), further knead at 120°C, and then extrude the kneaded mixture into a metal mold and heat at 170°C It was cross-linked for 18 minutes to obtain a disk-shaped molded body with a diameter of 60 cm and a thickness of 2.5 mm. Then use a cutting machine (manufactured by Kato Machinery Co., Ltd.) to process concentric circular grooves (see figure 1 ).

[0129] Next, the surface roughness (Ra) of the inner surf...

Embodiment 1-2

[0132] With a screw extruder temperature adjusted to 160°C, 100 parts by volume of 1,2-polybutadiene (manufactured by JSR Corporation, trade name "JSR RB840") and 100 parts by volume of Water-soluble particles (average particle diameter: 20 μm) formed by coating a polypeptide on β-cyclodextrin (manufactured by Yokohama International Institute of Biological Research Co., Ltd., trade name “Dexipearl β-100”) were kneaded to obtain white particles. Then, 0.3 parts by volume of an organic peroxide (manufactured by NOF Corporation, trade name "Perhexine 25B") was added to the white granules, followed by further kneading at 120° C. to obtain white granules. Further, the white particles added with organic peroxide were put into a metal mold and heated at 190° C. for 10 minutes to cross-link to obtain a disk-shaped molded body with a diameter of 60 cm and a thickness of 2.5 mm. Then use the same cutting machine as in Example 1-1 to form concentric circular grooves with a width of 0.5 m...

Embodiment 2-1

[0151] With cutting machine (manufactured by Kato Machine Co., Ltd.) on one side of the disc-shaped molded body with a diameter of 60 cm and a thickness of 2.5 mm obtained in Example 1-1, form a structure with a width of 0.5 mm, a depth of 1 mm, and a longitudinal spacing of 5 mm. The horizontal spacing is 5mm, and the grid pattern is a square grid groove (see Figure 4 ).

[0152] Furthermore, a sheet for measuring surface roughness (Ra) was cut out from the obtained polishing pad along the direction including the width of the groove. Then, the surface roughness (Ra) and the like of the inner surface of the groove were measured in three different fields of view using the above-mentioned three-dimensional surface structure analysis microscope. As a result of the measurement, the surface roughness (Ra) was 2.5 μm.

[0153] Then use an optical microscope to enlarge and photograph the cross-section of the grooved portion of the polishing pad. The resulting image is shown in ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention intends to provide a polishing pad and a multi-layer polishing pad (1) that can particularly effectively suppress scratch from occurring. The polishing pad (1) of the invention comprises at least one part selected from a groove (a) having at least one kind of shape selected from annular, lattice-like and spiral form on a polishing surface side, a concave portion (b) and a through hole (c). In the above, surface roughness of an inner surface of the part is 20 mu m or less and the polishing pad (1) is used for chemical mechanical polishing.

Description

technical field [0001] The invention relates to a polishing pad and a multilayer polishing pad. More specifically, the present invention relates to a polishing pad and a multilayer polishing pad having grooves of a specific shape on one side of the polishing surface, or recesses of a specific shape having openings on one side of the polishing surface. The polishing pad and the multi-layer polishing pad of the present invention can be widely used in the manufacture of semiconductor devices, and are especially suitable for chemical mechanical polishing of the surface of polished materials such as wafers. Background technique [0002] In recent years, chemical mechanical polishing (CMP) has drawn attention as a polishing method capable of forming a surface with excellent flatness. When CMP is used, the polishing is performed by sliding the polishing pad and the polished surface of the material to be polished while allowing the slurry which is an aqueous dispersion of abrasives...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/26B24D13/12B24D13/14
CPCB24B37/26H01L21/304
Inventor 川桥信夫长谷川亨志保浩司河村知男河原弘二保坂幸生
Owner JSR CORPORATIOON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products