107results about How to "Increase polishing speed" patented technology

A composition for polishing a semiconductor wafer contains fumed silica particles that are produced by wet grinding using a grinding medium and that have characteristics (A) to (C):

(A) a specific surface area in the range of 50 to 200 m²/g measured by a BET method;

(B) an average particle diameter in the range of 10 to 50 nm measured by a laser light-scattering method; and

(C) an average ratio A/B of the major axis A to the minor axis B of the fumed silica particles in the range of 1.2 to 2.0 measured by TEM observation,

wherein the concentration of silica particles containing the fumed silica particles is in the range of 0.5 to 50 weight percent relative to the total weight of an aqueous dispersion.

The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

A metal polishing slurry which is capable of simultaneously realizing a high polishing speed and reduced dishing in the polishing of a subject to be polished is provided. The metal polishing slurry includes a compound represented by the following general formula (1):

wherein X represents a heterocyclic group containing at least one nitrogen atom, Y represents hydrogen atom, an aliphatic hydrocarbon group, an aryl group, or a —C(═O)Z′ wherein Z′ is as defined for Z, and Z represents hydrogen atom, an optionally substituted aliphatic hydrocarbon group, an optionally substituted aryl group, an optionally substituted heterocyclic group, —NZ¹Z², or —OZ³ wherein Z¹, Z², and Z³ independently represent hydrogen atom, an optionally substituted aliphatic hydrocarbon group, an optionally substituted aryl group, or an optionally substituted heterocyclic group, with the proviso that Y and Z may together form a ring; an oxidizing agent; and an organic acid.

The invention discloses a preparation method for an epoxy resin binding agent diamond grinding tool with high polishing performance. A working layer is mainly prepared from a diamond grinding material, an auxiliary grinding material, epoxy resin, a curing agent, rare earth polishing powder, filler and a dilution agent. The preparation method comprises the steps of uniformly and mechanically mixing 5-20 parts of the diamond grinding material, 5-20 parts of the auxiliary grinding material, 5-25 parts of the rare earth polishing powder and 5-40 parts of the filler to obtain a first mixture, then uniformly mixing and stirring the first mixture with 20-40 parts of the epoxy resin, 7-15 parts of the curing agent and 0.5-10 parts of the dilution agent to obtain a final mixture, injecting the mixture with flowability into a plastic mold in a pouring manner, and curing the mixture to obtain the epoxy resin binding agent diamond grinding tool with high polishing performance. The materials are in percentage by mass. Compared with the conventional hot pressing molding method, the preparation method has the advantages that the technology is simple, the energy is saved, and the emission is reduced; the pollution, which is caused by solid dust, to the environment is reduced, and the production speed is high; compared with the conventional product in the foreign country, the epoxy resin binding agent diamond grinding tool has the advantages of good polishing effect, high polishing efficiency, few air hole defects of the grinding tool and the like.

In CMP technology for planarizing an interlayer insulation film, a BPSG film, an insulation film for shallow trench isolation, or the like, in the production process of a semiconductor element, irregularities of a matter being polished, e.g. a silicon oxide film, are planarized efficiently at a high speed while suppressing the occurrence of polishing flaws on the substrate by employing a polishing pad having organic fibers exposed on the surface thereof abutting against the matter being polished.

Disclosed is a slurry composition for secondary polishing of silicon wafers comprising: 2˜10 weight % of colloidal silica having an average particle size of 30˜80 nm; 0.5˜1.5 % by weight of ammonia; 0.2˜1 weight % of a hydroxyalkycellulose-based polymer for modifying rheology of the composition; 0.03˜0.5 weight % of a polyoxyethylenealkylamine ether-based nonionic surfactant; 0.01˜1 weight % of a quaternary ammonium base and the balance of deionized water.

A high concentration silica slurry can be used for polishing of substrates, such as semiconductor materials. The slurry contains a silica powder dispersed in an solvent. The silica slurry has a silica concentration of more than 50% by weight and a viscosity of less than 1000 mPa·s, wherein the silica powder has a ratio DL/DT of less than 1.3, wherein DL is an average particle size of the silica powder measured by a laser diffraction particle size distribution method and DT is an average primary particle size of the silica powder measured by a TEM photography observation, and wherein the silica powder has an average primary particle size of from 0.08 μm to 0.8 μm.

A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied.

• • (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater.
  • (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.

According to the present invention, there is provided a polishing pad for polishing the surface of wafers for creating semiconductor integrated circuits, wherein said pad has a high polishing speed, said polishing is uniform, and said pad has a long life. Preferably, the polishing pad of the present invention comprises nonwoven fabric (base matrix) and a nonporous photo-setting resin that fills the space between the nonwoven fabric, and can be produced by impregnating the base matrix with a photo-sensitive resin composition containing at least one selected from the group consisting of a hydrophilic photopolymeric polymer or oligomer, and/or a hydrophilic photopolymeric monomer, and then photo-setting the same.

A polishing apparatus is provided. The polishing apparatus includes: a polishing unit configured to polish a substrate by bringing a polishing tool into contact with the substrate and moving the substrate relatively to the polishing tool; a cleaning unit; and a first transfer robot configured to transfer the substrate before polishing to the polishing unit and/or configured to transfer the substrate after polishing from the polishing unit to the cleaning unit. The cleaning unit includes: at least one cleaning module, a buff processing module configured to perform a buff process to the substrate, and a second transfer robot configured to transfer the substrate between the cleaning module and the buff processing module, the second transfer robot being different from the first robot.

In a semiconductor substrate having a notch in an edge portion thereof, each of the two shoulder portions of the notch is configured as an arc and the difference in curvature between the two shoulder portions of the notch is not less than 0 mm and not more than 0.1 mm.

The invention discloses a chemical-mechanical polishing pad and solves the problem that an existing polishing pad is scratched easily and low in polishing efficiency. According to the technical scheme, the chemical-mechanical polishing pad comprises a polishing layer, a plurality of holes are formed in the polishing surface of the polishing layer, the center of the polishing surface is a circle center, and the holes are arranged into multiple rows of concentric rings different in diameter. The center of the polishing surface is an end point, and a plurality of grooves extending to the edge of the polishing surface are evenly radiated from the end point. The surface roughness of the polishing surface is below 15 micrometers. The polishing pad is simple in structure, capable of increased polishing removing efficiency and inhibiting scratches, and long in service life.

The present invention provides a cerium oxide slurry, a cerium oxide polishing slurry, and a method of polishing a substrate by using the same, wherein decrease of scratches and polish at high speed can be realized by reducing the content of coarse grains by improving in the disperse state of cerium oxide particles. The invention relates to a cerium oxide slurry containing cerium oxide particles, dispersant and water, in which the ratio of weight of cerium oxide/weight of dispersant is in a range of 20 to 80 and relates a cerium oxide polishing slurry comprising the cerium oxide slurry and additives such as a water-soluble polymer.

The invention provides a diamond resin binder abrasive disc and a preparation method and an application thereof and belongs to the technical field of polishing grinding apparatuses. The diamond resinbinder abrasive disc is prepared from the following raw materials in parts by mass: 20-40 parts of thermosetting resin, 4-30 parts of a curing agent, 15-30 parts of a diamond, 10-20 parts of an auxiliary grinding material, 10-30 parts of micro filler, 1-10 parts of nano filler and 1-5 parts of a coupling agent. The diamond resin binder abrasive disc is used for polishing a marble and has the advantages of being good in polishing effect, high in efficiency, environmental-friendly and safe and the like.

Disclosed are a concentrate of fine ceria particles for chemical mechanical polishing, and a method of preparing the same. The method includes reacting a reactant mixture comprising i) water, ii) an aqueous solution of water-soluble cerium salt compound, and iii) ammonia or ammonium salt at a reaction temperature of 250-700 ? under a reaction pressure of 180-550 bar for 0.01 sec to 10 min in a continuous reactor to obtain a solution containing the fine ceria particles, the cerium salt compound being contained at an amount of 0.01 to 20 wt % in the reactant mixture; and concentrating the solution containing the fine ceria particles in a concentrator having a filter with a pore size of 0.01 to 10 ?. The concentrate is advantageous in that a CMP slurry and a dispersing solution are easily produced by diluting the concentrate and adding an additive to the concentrate.

A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing slurry for metal makes it possible to raise the polishing speed sufficiently while keeping the etching speed low, restrain the generation of corrosion of the surface of a metal and dishing, and form a metal-film-buried pattern having a high reliability in the process of formation of wiring of semiconductor devices.

To provide a slurry for Chemical Mechanical Polishing, a Chemical Mechanical Polishing method using said slurry, and a method of producing electronic devices using said method that makes it possible to achieve a low scratch process capability in processing surfaces such as SiO₂ film surfaces and the like and also to enable speed polishing to attain a high processing efficiency.

Slurry for Chemical Mechanical Polishing characterized in comprising abrasive grains and water, wherein said abrasive grains are composite particles coated with ceria particles consisting of organic host particles and ceria particles, zeta potential of said composite particles being a negative potential, the organic host particles constituting the composite particles coated with ceria particles are organic host particles to which carboxyl groups and sulfonyl groups are introduced; the slurry is added with panarization additive; and the planarization additive is poly(methyl)acrylic acid ammonium salt.

The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1).

(In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH₂.)

The present invention provides a polishing composition that can polish an object to be polished at a high polishing speed with fewer scratches (defects). The present invention relates to a polishing composition including silica and a dispersing medium, the polishing composition having, when analyzed by pulse NMR spectroscopy, a specific relaxation rate (R_2sp) of from 1.60 to 4.20 as determined by the following Formula (1):

R_2sp=(R_(silica))/(R_(medium))−1   Formula (1):

wherein R(_silica) represents the reciprocal of the relaxation time of silica (unit:/millisecond), and R(_medium) represents the reciprocal of the relaxation time of the dispersing medium (unit:/millisecond).

A polishing agent which comprises a composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water, adjusted to a pH of 1.5-4, wherein the amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is at least 0.10 mol with respect to 1 kg of the composition without the organic acid, and the organic acid contains at least two carboxyl groups, wherein the logarithm of the inverse of the first acid dissociation constant (pKa1) is no greater than 3.

A method, kit, and composition for polishing a sapphire surface are described here. The invention involves a sapphire surface polishing composition comprising colloidal silica particles and an extended or gemini surfactant that can reduce the contact angles of the polishing composition on both polishing pads and sapphire surfaces.

A CMP slurry for ruthenium and a polishing process using the same. In a process technology below 0.1 mum, when a capacitor using a (Ba1-xSrx)TiO3 film as a dielectric film is fabricated, the slurry is used to polish a ruthenium film deposited as a lower electrode according to a CMP process. The CMP process is performed by using the slurry, to improve a polishing speed of ruthenium under a low polishing pressure. In addition, the CMP process is performed according to an one-step process by using one kind of slurry. As a result, defects on an insulating film are reduced and a polishing property is improved, thereby simplifying the CMP process.