Cerium oxide slurry, cerium oxide polishing slurry and method for polishing substrate using the same

a cerium oxide and slurry technology, applied in the direction of lapping machines, manufacturing tools, other chemical processes, etc., can solve the problems of small polishing speed ratio low polishing speed of colloid silica polishing slurry, and far from practical property of shallow trench isolation, etc., to reduce the content ratio of coarse grains, reduce scratches and polishing

Inactive Publication Date: 2007-04-26
HITACHI CHEM CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0012] It is hence an object of the invention to decrease scratches and polish at high speed by reducing the content ratio of coarse grains. For this purpose, the invention provides a cerium oxide slurry, a cerium oxide polish

Problems solved by technology

However, such fumed silica polishing slurry is low in polishing speed.
However, the polishing slurry of colloid silica composition is small in the polishing speed ratio between the silicon oxide film and stopper film, being about 3, and so far from practical proper

Method used

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  • Cerium oxide slurry, cerium oxide polishing slurry and method for polishing substrate using the same
  • Cerium oxide slurry, cerium oxide polishing slurry and method for polishing substrate using the same

Examples

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examples 1 to 7

[0083] (Preparation of cerium oxide ground powder)

[0084] Forty kilo-grams of cerium carbonate hydrate was put in an aluminum container, and calcined in air for 2 hours at 830° C., and 20 kg of yellowish white powder was obtained. This powder was determined in phase by X-ray diffraction method, and was identified to be cerium oxide. The calcined powder particle size was 20 to 100 μm.

[0085] Twenty kilograms of the cerium oxide particle powder was ground in dry process by using a jet mill. The specific surface area of polycrystal was measured by BET method, and 9.4 m2 / g was obtained.

[0086] (Preparation of cerium oxide slurry)

[0087] The ground cerium oxide powder, 10.0 kg, was mixed with 116.65 kg of deionized water, and 228 g of commercial aqueous solution of ammonium salt polyacrylate (weight-average molecular weight 8000, 40% by weight) was added as dispersant, and the mixture was stirred for 10 minutes. By ultrasonic irradiation in piping for sending into other container, cerium...

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Abstract

The present invention provides a cerium oxide slurry, a cerium oxide polishing slurry, and a method of polishing a substrate by using the same, wherein decrease of scratches and polish at high speed can be realized by reducing the content of coarse grains by improving in the disperse state of cerium oxide particles. The invention relates to a cerium oxide slurry containing cerium oxide particles, dispersant and water, in which the ratio of weight of cerium oxide/weight of dispersant is in a range of 20 to 80 and relates a cerium oxide polishing slurry comprising the cerium oxide slurry and additives such as a water-soluble polymer.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a cerium oxide slurry, a cerium oxide polishing slurry, and a method of polishing a substrate using the same. [0003] 2. Description of the Related Art [0004] In recent manufacturing process of ULSI semiconductor devices, various processing technologies for higher density and finer size are researched and developed. One of them is CMP (chemical mechanical polishing) technology, which is now an indispensable technology in manufacturing process of semiconductor devices for flattening of interlayer dielectrics or BPSG films (silicon dioxide film doped with boron or phosphorus), isolation and forming of shallow trench devices, and forming of plugged and embedded metal wiring. [0005] Conventionally, in manufacturing process of semiconductor devices, inorganic dielectrics layer such as silicon oxide insulation film are formed by plasma CVD or low-pressure CVD method. As chemical-mechanical ...

Claims

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Application Information

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IPC IPC(8): B24B7/30
CPCC09G1/02C09K3/1463H01L21/31053B24B37/00H01L21/304C09K3/14
Inventor YOSHIKAWA, SHIGERUENOMOTO, KAZUHIRO
Owner HITACHI CHEM CO LTD
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