Large-mismatch silicon-based substrate antimonide transistor with high electron mobility and manufacturing method thereof

Abstract

The invention provides a large-mismatch silicon-based substrate antimonide transistor with high electron mobility. The large-mismatch silicon-based substrate antimonide transistor comprises a substrate, a composite buffering layer growing on the substrate, an insert layer growing on the composite buffering layer, an AlSb isolation layer growing on the insert layer, a sub channel layer growing on the AlSb isolation layer, an antimonide lower potential barrier layer growing on the sub channel layer, an InAs channel layer growing on the antimonide lower potential barrier layer, an antimonide isolation layer growing on the InAs channel layer, a doping layer growing on the antimonide isolation layer, wherein the doping layer is InAs doped with a Si plane or delta doping of Te; an upper potential barrier layer growing on the doping layer, wherein the upper potential barrier layer is a composite potential barrier layer consisting of an AlSb layer and an InAlAs layer; and an InAs cap layer growing on the upper potential barrier layer, wherein the InAs cap layer is an unintentionally doped InAs or n type doped InAs.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to high electron mobility transistors based on large mismatch silicon-based substrate antimonides and a manufacturing method. technical background [0002] Antimonide semiconductors refer to binary or multi-component III-V compound semiconductor materials containing antimony elements. Since the lattice constant is close to The binary antimonide semiconductor materials AlSb, GaSb, InSb and InAs are often referred to as Material systems, they cover a large bandgap range, and have excellent properties such as high electron mobility and high electron saturation velocity. These characteristics create a broad space for the manufacture of high-speed, low-power microelectric and optoelectronic devices. In high-speed compound semiconductors, antimonide high electron mobility transistors play a pivotal role. High electron mobility transistors based on III-V compound semiconductors ...

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Problems solved by technology

However, the serious mismatch of the crystal lattice is also the biggest problem facing the selection of Si as the substrate.

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