Deep reactive ion etching method and gas-flow control device thereof

Abstract

A deep reactive ion etching method belongs to the technical field of manufacturing of semiconductors. The method comprises an etching step and a polymer-depositing step which are alternately performed, wherein the conversion between a first process condition employed by the etching step and a second process condition employed by the polymer-depositing step is realized by a gradually changed conversion method. The side wall of a deep through hole etched by the deep reactive ion etching method has good smoothness; and the etching efficiency of the method is high.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, in particular to a reactive ion etching (Reactive Icon Etching, RIE) technology, in particular to a deep reactive ion etching (De-coupled RIE, DRIE) method and a gas flow control device thereof. Background technique [0002] In the field of semiconductor manufacturing technology, in fields such as MEMS (Micro-Electro-Mechanical Systems, micro-electro-mechanical systems) and 3D packaging technology, it is usually necessary to etch deep via holes in materials such as silicon. For example, in bulk silicon etching technology, deep through-silicon-vias (Through-Silicon-Via, TSV) have a depth of hundreds of microns and an aspect ratio greater than 10, and deep reactive ion etching is usually used to etch bulk silicon. form. [0003] figure 1 Shown is a schematic diagram of the deep reactive ion etching method in the prior art. In the prior art, the deep reactive ion etching of TS...

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to avoid the problem of reduced smoothness of the side ...

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