Deep reactive ion etching method and gas-flow control device thereof

Abstract

A deep reactive ion etching method belongs to the technical field of manufacturing of semiconductors. The method comprises an etching step and a polymer-depositing step which are alternately performed, wherein the conversion between a first process condition employed by the etching step and a second process condition employed by the polymer-depositing step is realized by a gradually changed conversion method. The side wall of a deep through hole etched by the deep reactive ion etching method has good smoothness; and the etching efficiency of the method is high.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, in particular to a reactive ion etching (Reactive Icon Etching, RIE) technology, in particular to a deep reactive ion etching (De-coupled RIE, DRIE) method and a gas flow control device thereof. Background technique [0002] In the field of semiconductor manufacturing technology, in fields such as MEMS (Micro-Electro-Mechanical Systems, micro-electro-mechanical systems) and 3D packaging technology, it is usually necessary to etch deep via holes in materials such as silicon. For example, in bulk silicon etching technology, deep through-silicon-vias (Through-Silicon-Via, TSV) have a depth of hundreds of microns and an aspect ratio greater than 10, and deep reactive ion etching is usually used to etch bulk silicon. form. [0003] figure 1 Shown is a schematic diagram of the deep reactive ion etching method in the prior art. In the prior art, the deep reactive ion etching of TS...

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to avoid the problem of reduced smoothness of the side wall of the through hole and reduced etching efficiency during the formation of the deep through hole by deep reactive ion etching.

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