Deep reactive ion etching method and gas flow control device thereof

Abstract

The invention discloses a deep reactive ion etching method, which belongs to the technical field of semiconductor manufacturing. The method comprises a plurality of cyclically-performed etching cycles, and each etching cycle comprises an etching step and a polymer deposition step, wherein etching reactive gases are supplied for the etching step, sidewall protective gases are supplied for the polymer deposition step, and in the process of transforming the etching step to the polymer deposition step, the supply times of the etching reactive gas and the sidewall protective gas are overlapped. The invention has the following advantages that: sidewalls of a deep through hole etched by using the deep reactive ion etching method of the invention is good in smoothness; and the etching efficiency is high.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and specifically relates to a reactive ion etching (ReactiveIcon Etching, RIE) technology, in particular to a deep reactive ion etching (De-coupled RIE, DRIE) method and a gas flow control device thereof. Background technique [0002] In the field of semiconductor manufacturing technology, in fields such as MEMS (Micro-Electro-Mechanical Systems, micro-electro-mechanical systems) and 3D packaging technology, it is usually necessary to etch deep via holes in materials such as silicon. For example, in bulk silicon etching technology, deep through-silicon-vias (Through-Silicon-Via, TSV) have a depth of hundreds of microns and an aspect ratio greater than 10, and deep reactive ion etching is usually used to etch bulk silicon. form. [0003] figure 1 Shown is a schematic diagram of the deep reactive ion etching method in the prior art. In the prior art, the deep reactive ion etc...

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to avoid the problem of reduced smoothness of the side wall of the through hole and reduced etching efficiency during the formation of the deep through hole by deep reactive ion etching.

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