Deep reactive ion etching method and gas flow control device thereof

A deep reactive ion, gas flow technology, applied in flow control, non-electric variable control, control/regulation systems, etc., can solve the problems of reduced etching efficiency, reduced smoothness of the sidewall of through holes, etc., to achieve good smoothness, The effect of reducing switching time and improving etching efficiency

Inactive Publication Date: 2011-01-26
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Abstract
  • Description
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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to avoid the problem of reduced smoothness of the side ...

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  • Deep reactive ion etching method and gas flow control device thereof
  • Deep reactive ion etching method and gas flow control device thereof
  • Deep reactive ion etching method and gas flow control device thereof

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0031] Figure 4 Shown is a schematic diagram of the gas flow control device provided by the present invention. Such as Figure 4 As shown, the gas flow device includes a chamber 301, a pipeline 302 for passing Ar gas, and a pipeline for passing O 2 Gas pipeline 303, through SF 6 Gas pipeline 304, through C 4 f 8 Gas pipeline 305, MFC and MFC control module 310, the gas flow control device is used for gas flow control in the deep reactive ion etching process, the wafer to be etched is placed in the chamber 301, and the pipelines 302, 303 MFC 312, 313, 314, 315 are respectively set in , 304, 305, and the MFC control module 310 can control the MFC 312, 313, 314, 315 at the same time, through the control of the MFC by the MFC control module, it is possible to re...

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Abstract

The invention discloses a deep reactive ion etching method, which belongs to the technical field of semiconductor manufacturing. The method comprises a plurality of cyclically-performed etching cycles, and each etching cycle comprises an etching step and a polymer deposition step, wherein etching reactive gases are supplied for the etching step, sidewall protective gases are supplied for the polymer deposition step, and in the process of transforming the etching step to the polymer deposition step, the supply times of the etching reactive gas and the sidewall protective gas are overlapped. The invention has the following advantages that: sidewalls of a deep through hole etched by using the deep reactive ion etching method of the invention is good in smoothness; and the etching efficiency is high.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and specifically relates to a reactive ion etching (ReactiveIcon Etching, RIE) technology, in particular to a deep reactive ion etching (De-coupled RIE, DRIE) method and a gas flow control device thereof. Background technique [0002] In the field of semiconductor manufacturing technology, in fields such as MEMS (Micro-Electro-Mechanical Systems, micro-electro-mechanical systems) and 3D packaging technology, it is usually necessary to etch deep via holes in materials such as silicon. For example, in bulk silicon etching technology, deep through-silicon-vias (Through-Silicon-Via, TSV) have a depth of hundreds of microns and an aspect ratio greater than 10, and deep reactive ion etching is usually used to etch bulk silicon. form. [0003] figure 1 Shown is a schematic diagram of the deep reactive ion etching method in the prior art. In the prior art, the deep reactive ion etc...

Claims

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Application Information

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IPC IPC(8): H01L21/3065H01L21/312G05D7/00
Inventor 尹志尧吴万俊刘鹏
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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