Manufacturing process for realizing through silicon via packaging by adopting BCB (Benzocyclobutene) supplementary bonding

Abstract

The invention relates to a manufacturing process for realizing through silicon via packaging by adopting BCB (Benzocyclobutene) supplementary bonding. The manufacturing process is characterized being a method for manufacturing the TSV (Through Silicon Via) packaging after a wafer is thinned under the assistance of a support wafer which is bonded at low temperature by utilizing organic matter BCB. The manufacturing process of the TSV packaging comprises the following steps of: sputtering a metal layer on the naked support wafer, coating a layer of BCB and then carrying out photoetching; carrying out DRIE (Deep Reactive Ion Etching) on the front face of the TSV wafer to form a TSV array; aligning one side of the support wafer with the BCB with the front face of the TSV wafer and then carrying out BCB low-temperature bonding in a bonding machine; and manufacturing TSV subsequent process after the TSV wafer is thinned. The TSV packaging manufacturing process has higher reliability, and the adopted device and the adopted process are both a conventional process and a device in the semiconductor machining.

Description

technical field [0001] The present invention relates to a manufacturing process of using BCB assisted bonding to realize through-silicon via (Through silicon via TSV) packaging. The method for making TSV after thinning belongs to the technical field of wafer-level TSV three-dimensional interconnection packaging. Background technique [0002] In order to meet the needs of the development of very large scale integration (VLSI), a novel 3D stacked packaging technology emerged as the times require. It integrates chips of different performance and multiple technologies into a single package with the smallest size and lightest weight. It is a kind of vertical electrical conduction between chips and wafers. , the packaging and interconnection technology that realizes the interconnection between chips, and the difference from the previous IC package bonding and bump technology is that the described process uses TSV (Through Silicon Via, Through Silicon Via) instead of 2D- Cu inter...

AI Technical Summary

Problems solved by technology

Metal bonding is to bond two wafers with metal surfaces sputtered with each other. This method has high metal bonding strength and can also be used as a seed layer for electroplating TSV. However, the cost of sputtering metal is high and the bonding temperature very high

The photoresist bonding process is simple, but the bonding strength is low, and the wafers are easy to fall off in the subsequent process, and due to the fluidity of the resist during bonding, it is easy to cause uneven thickness of the bonding interface, which affects the subsequent process. Negative Effects

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