148results about How to "Improve etching precision" patented technology

The invention discloses a miniature light emitting diode lamp panel, a manufacturing method thereof, a backlight module and a display device. A thin film transistor array substrate is used to replacea PCB (Printed Circuit Board) in the prior art. The thin film transistor is characterized in that a large scale semiconductor integrated circuit is manufactured on a glass substrate, and film layers of a generation circuit are formed by sputtering, chemical vapor deposition and other processes, so that the manufacturing cost is lowered, and the etching accuracy is much higher than that of the PCB.During manufacturing of the lamp panel through combination of the thin film transistor array substrate and a miniature light emitting diode chip, the miniature light emitting diode chip is bonded with a current-conducting and heat-conducting adhesive, so that the chip with a poor light emitting effect can be replaced; maintenance of lamp panel is facilitated; and the difficulty of maintenance islowered.

A method and system are provided for etching a layer to be etched in a plasma etching reactor, including: forming a reactive layer by injection of at least one reactive gas to form a reactive gas plasma, which forms, together with the layer to be etched, a reactive layer which goes into the layer to be etched during etching of said layer to be etched, wherein the reactive layer reaches a steady state thickness upon completion of a determined duration of said injection; said injection being interrupted before said determined duration has elapsed so that, upon completion of the forming of the reactive layer, the thickness of the reactive layer is smaller than said steady state thickness; and removing the reactive layer by injection of at least one inert gas to form an inert gas plasma, which makes it possible to remove only the reactive layer.

The invention relates to the field of semiconductor fabrication, in particular to a metal bonding method of a three-dimensional chip structure and a bonding structure. The method comprises that copper of a top chip is processed in a chemical machinery planarization mode, a silicon nitride layer is deposited on the surface after being processed in a chemical machinery planarization mode, the silicon nitride layer attached to the copper of the top chip is etched, a groove is formed, the bottom of the groove is the copper of the top chip, copper of a bottom chip is processed in a chemical machinery planarization mode, a bottom silica layer is etched, the copper is enabled to be protruded, activating treatment is carried out to the surface after etch of the copper of the bottom chip is achieved, the copper of the top chip and the copper of the bottom chip are aligned and bonded, and annealing treatment is carried out to the chips after being bonded. According to the metal bonding method of the three-dimensional chip structure and the bonding structure, silicon oxide and silicon nitride are used for being matched with metal and metal bonding, bonding quality is enabled to be better, a silicon nitride layer thin layer can prevent the metal from diffusing into around materials, and goals that a technology process is simplified, temperature needed by bonding is reduced, bonding reliability is improved, bonding efficiency is improved, and bonding cost is reduced can be achieved.

The invention discloses a critical method for manufacturing a fiber array by a semiconductor technology. The method comprises the following steps of: plating a protective layer on a base plate; coating optical resist on the protective layer; exposing the optical resist; developing to remove a light-transmittable part in the optical resist; removing the part, which is not covered by the optical resist, in the protective layer; etching a U-shaped groove on the base plate by a dry etching technology; removing the protective layer remained on the base plate to get a fiber array location base plate; arranging fibers on the fiber array location base plate to form a fiber ribbon, and packaging the fiber ribbon to get the fiber array. By the dry etching technology, the high-precision U-shaped groove can be etched, and the fibers are located by the U-shaped groove, so that location precision of the fibers is improved, mean error of displacement is reduced greatly, and precision of the manufactured fiber array reaches 0.1 micrometer, thus, loss of optical signals is reduced, and the uniformity of the optical signals is improved.

The present invention discloses an etching liquid for the flat panel display. The etching liquid comprises oxalic acid, trifluoromethyl benzenesulfonic acid and water. The using amount of the oxalic acid is 1-10% of the total weight of the etching liquid. The using amount of the trifluoromethyl benzenesulfonic acid is 0.5-5% of the total weight of the etching liquid, and the balance is water. The invention provides the etching liquid for the flat panel display, which has the advantages of high efficiency, high etching precision and no pungent odour. The etching liquid is used for etching the ITO transparent conductive film. The adopted oxalic acid and the trifluoromethyl benzenesulfonic acid are organic acids. The compound composed of the two organic acids is not easily volatilized and has excellent wetting quality. When used as the ITO conductive film etching liquid, the etching liquid compound has the characteristics of excellent etching performance, no residue, less environmental pollution, etc.

The invention discloses an etching method which includes the steps that a former substrate is etched; the etching mask pattern of a latter substrate is detected; the etching pattern of the former substrate is detected; according to the detection results of the etching pattern of the former substrate and the etching mask pattern of the latter substrate, the etching condition of the next substrate is determined; based on the etching condition of the latter substrate, the latter substrate is etched. The etching method of the invention can further improve the controlling force of an etching technology and the precision of etching.

The invention provides a method for manufacturing a fin field effect transistor. The method includes forming a grid hard mask used for positioning a grid and a side wall hard mask surrounding the side face of the grid hard mask on a semiconductor substrate; by utilizing the side wall hard mask as a self-aligning hard mask, enabling the semiconductor substrate to form first fin structures with inclined side faces, forming shallow groove isolators among the first fin structures , removing the side wall hard mask, performing second-time etching, and finally acquiring the fin field effect transistor where the upper portion and the lower portion are different in width. The side faces of the fin structures are inclined when the shallow groove isolators are formed in a filling oxidation layer, so that filling process windows are increased, filling gaps are reduced, and device performance is improved.

The invention relates to an organic light-emitting display apparatus and a preparation method thereof. The preparation method comprises the steps of providing a substrate; forming a positive electrodelayer on the substrate; forming an organic light-emitting layer on the positive electrode layer; forming a negative electrode layer on the organic light-emitting layer; removing a part of the negative electrode layer and a part of the organic light-emitting layer which are corresponding to an opening in the substrate through etching by adopting a plasma bombardment mode through the opening of a mask plate; providing a cover plate with an outer layer glass material and an inner layer glass material; enabling the substrate to be laminated with the cover plate, and performing sintering on the outer layer glass material and the inner layer glass material to form an outer layer packaging layer and an inner layer packaging layer, and enabling the substrate and the cover plate to be connected ina sealing manner; and performing hole punching on the substrate and the cover plate in the inner layer packaging layer to form the organic light-emitting display apparatus with holes. By virtue of the plasma bombardment mode, more efficient organic material etching can be realized, and higher production efficiency and higher etching precision are achieved; and in addition, scalding to a pixel region can be avoided, the etching cost can be lower and the production cost can be lowered effectively.

The invention discloses a flexible display panel and a manufacturing method thereof so that the possibility of excessive etching in groove hole etching in a non-display area of a flexible display panel can be reduced and thus the etching precision is improved and the yield of the flexible display panel is enhanced. The flexible display panel is composed of a flexible substrate, a buffer layer, a gate insulating layer, an interlayer dielectric layer, a thin-film transistor, an organic electroluminescence element, and an encapsulation layer. The flexible substrate consists of a display area anda non-display area. An etching stop layer is arranged at the display area of the flexible substrate; and the buffer layer, the gate insulating layer, and the interlayer dielectric layer are arranged on the flexible substrate and the etching stop layer successively. At least one etched groove hole is formed in a region, corresponding to the etching stop layer, of each of the buffer layer, the gateinsulating layer, and the interlayer dielectric layer in the non-display area respectively. And the thin-film transistor, the organic electroluminescence element, and the encapsulation layer are arranged on the interlayer dielectric layer in the display area successively.

The invention provides a method for replacing a backdrill copper removal process. The method includes providing a printed circuit board, and drilling the printed circuit board to form a through hole; electroplating the through hole of the printed circuit board after the through hole is drilled to form a metal layer; filling the through hole of the printed circuit board where the metal layer is formed with ink; utilizing a plate grinding machine for grinding to grind off the ink protruding out of a through hole port; pasting a dry film in a copper plated surface area, needless of copper removal, of the printed circuit board with the through hole and after being electroplated, and exposing an area of 3-6mil larger than a single side of the through hole by the dry film; providing an etching line to etch the printed circuit board; repeating the etching step to remove metal filings left in the through hole. The method is high in copper removal efficiency, working process is easy to control, and quality of the printed circuit board is guaranteed.

The invention provides an etching liquid for copper molybdenum and alloy films as well as a preparation method of the etching liquid. The etching liquid is prepared from the components including hydrogen peroxide, a hydrogen peroxide stabilizer, an amine pH regulator, a complexing agent, a metal corrosion inhibitor and the balance water; the amine pH regulator is a compound shown in formula 1 and/or formula 2, R1 and R4 are independently selected from C1-4 alkylene, and R2, R3, R5 and R6 are independently selected from single bonds or C2-4 alkylene. By the aid of the etching liquid, the excellent etching precision can be realized, no damage to metallic oxide IGZO films can be avoided further, the 6Mask technology of IGZO products can be upgraded to the 5Mask technology, the manufacturing cost of the display products can be reduced, and the resolution ratio of the display products can be increased.

The invention discloses a laser ablation processing method for quartz crystal. The laser ablation processing method specifically comprises the steps of selecting lasers, preparing control software, designing processing drawings, carrying out laser ablation, carrying out post-processing treatment and carrying out detection. The method for processing the quartz crystal is designed on the basis of limitation to the condition of each step, the quartz crystal can be effectively processed for forming various shapes and can be thinned through the processing method, the thickness of the thinned quartz crystal is small, the corresponding base frequency is high, and the strength of the processed quartz crystal is high. In addition, the processing method is simple, the processing accuracy is high, and the processing dimensional accuracy of the quartz crystal can be controlled to be within the range of +/- 5 micrometers.

The invention provides a method for etching an FTO (fluorine-doped tin oxide) conductive thin film. The method includes steps of depositing the FTO conductive thin film on a substrate, covering an insulating etching-resistant layer on one side of the FTO conductive thin film according to preset patterns and further acquiring a cathode; placing the cathode and an inert anode into acid electrolyte, applying a constant voltage between the cathode and the anode, and etching and removing parts, which are not covered by the insulating etching-resistant layer, of the FTO conductive thin film. The method for etching the FTO conductive thin film has the advantages that the method is scientific and reasonable, various shortcomings in the prior art are overcome, and the etching production efficiency and the etching precision are high.

A top-jet type spray etching machine comprises an etching machine body and a liquid medicine circulating system, wherein the etching machine body is mainly composed of a transition area, a cleaning area and an etching area, spraying devices are arranged on the cleaning area and the etching area respectively, synchronous belt conveying devices are arranged below the transition area and the cleaning area, a servo drive motor is arranged below the transition area, a slide rail penetrating through the transition area, the cleaning area and the etching area is arranged below the etching machine body, etching basket tools are placed on the slide rail, the synchronous belt conveying devices are connected and linked through push rods, and the liquid medicine circulating system is mainly composed of a DI water tank body, a chemical liquid medicine tank body, a heating tank, corresponding pipelines, corresponding valves and a circulating pump. In the glass panel etching process, the temperature, pressure, flow and the like of liquid medicine can be controlled in a full-automatic mode, double-sided waterfall etching is conducted on glass panel, no manual operation is needed in the whole working process, cleaning and etching are both completed automatically, and the etching precision and efficiency are remarkably improved.

The invention discloses a wet etching method for a ZnO-based transparent conductive film The wet etching method comprises the following steps: coating photoresist on a substrate deposited with the ZnO-based transparent conductive film; carrying out exposure and development and removing part of the photoresist so that the substrate to be etched is exposed; baking the substrate; proportioning with weak acids and deionized water to form a weak acid solution; putting the substrate to be etched into the weak acid solution for etching for 1-10000 seconds; washing with deionized water; removing the photoresist with an organic solution; and measuring the etching depth and the profile of the etched pattern. A weak acid solution wet etching process is adopted in the method, and the method has the advantages of simple operation, low cost, controllable etching rate, high etching precision and the like, and can be applied to a pattern processing technology of ZnO-based transparent electrodes in the fields of solar batteries, panel display, LEDs (light-emitting diodes) and the like, so that the industrial applications of the ZnO-based transparent conductive films the above fields are promoted.

The invention relates to etching equipment. The etching equipment is characterized by comprising a rack, wherein a bearing device is arranged on the rack and is used for bearing a wafer or a printed circuit board, an etching device and a cleaning device are arranged below the bearing device, both can move leftwards and rightwards and are in synchronous linkage, the etching device comprises an etching cutter and an etching liquid pump, the cleaning device comprises a cleaning cutter and a cleaning liquid pump, the etching cutter and the cleaning cutter completely skim over a lower surface of the wafer or the printed circuit board, and a first narrow gap and a second narrow gap are respectively formed in the tops of the etching cutter and the cleaning cutter. A cleaning liquid is sprayed from bottom to top, the residence time of an etching liquid on a pre-processed surface of the wafer or the printed circuit board can be effectively shortened, a pool effect is reduced to a great extent,so that circuit etching precision and accuracy are ensured; and moreover, etching operation and cleaning operation can be sequentially performed on the wafer or the printed circuit board at the same station by the etching equipment, and the process continuousness is ensured.

The invention provides a mask plate and a manufacturing method of a semiconductor device. Patterns of the mask plate comprise a first pattern capable of being exposed and a second pattern which is a sub-resolution auxiliary pattern, the ratio of the area of the first pattern to the total area of the mask plate is smaller than or equal to a preset ratio, and the ratio of the sum of the area of thesecond pattern and the area of the first pattern to the total area of the mask plate is within a preset range. Since the second graph is a sub-resolution auxiliary graph, the photoresist layer cannotbe imaged, so that etching of the to-be-etched layer cannot be affected; meanwhile, due to the existence of the second pattern, the density of the pattern in the mask plate is increased, the problem that the mask plate is heated and deformed due to the fact that light intensity is excessively concentrated when photoresist is patterned is solved, and the etching precision of the to-be-etched layerin the semiconductor device is improved.

The invention relates to the technical field of optical glass processing, in particular to a processing method of K9 ultrathin glass, which comprises the following steps: cutting a thick and heavy K9glass brick raw material to obtain a K9 glass sheet as a semi-finished product for later use; then, subjecting the obtained K9 glass sheet to polishing and thinning for multiple times to obtain K9 ultrathin glass, wherein the process specifically comprises the steps of physical thinning, attaching and fixing, chemical thinning, cleaning, mechanical thinning and peptizing; cutting and inspecting afinished product; and finally, packaging and storing the finally obtained product. The advantages of physical thinning, chemical thinning and mechanical thinning are brought into full play, the thinning speed is high, the thinning thickness is controllable, and the K9 ultrathin glass with the ideal thickness and the flat and smooth surface is obtained; and by the adoption of a top-spraying waterfall flow type chemical thinning method, an etching solution can be recycled, energy and cost are saved, the automation degree of industrial production is improved, and application and popularization are facilitated.