22results about How to "Improve etching precision" patented technology

The invention discloses a preparation method of a titanium etching solution, which comprises the following steps: S1, dividing 88.75-96.25 parts of water into three parts of A, B and C according to a volume ratio of 10: 1: 1, and the two parts of B and C are equal in quantity; s2, mixing 2.5-7.5 parts of ferric salt with B parts of water to obtain ferric salt premixed liquid; s3, mixing 1.25-3.75 parts of ammonium bifluoride with C parts of water to obtain an ammonium bifluoride premixed solution; s4, mixing the iron salt premixed solution obtained in the step S2 with the ammonium bifluoride premixed solution obtained in the step S3 to obtain an intermediate mixed solution; and S5, slowly adding the part A of water into the intermediate mixed solution obtained in the step S4, and detecting for multiple times to obtain the final titanium etching solution. According to the invention, on one hand, the etching effect on peptide products is ensured, and on the other hand, environmental pollution and harm to human bodies are reduced.

This invention relates to the field of vapor phase etching (VPE) apparatus technology, specifically a double-sided VPE apparatus for semiconductor silicon wafers. The apparatus includes a VPE apparatus body, a silicon wafer transfer mechanism at the upper end of the apparatus body, an etching chamber fixedly mounted on the outer side of the apparatus body, and a mounting base fixedly mounted on the upper end of the etching chamber. By combining the VPE mechanism with a central air-guiding mechanism, stable adsorption of the semiconductor silicon wafer is ensured during the etching process, avoiding vibration and improving etching efficiency and precision. A Bernoulli-style chuck structure is formed by the cooperation of the air-guiding support stage and the central stage, stably "fixing" the silicon wafer above the air-guiding support stage, minimizing contact with the semiconductor silicon wafer, avoiding physical damage and contamination, and simultaneously enabling multi-directional airflow distribution to meet auxiliary heat dissipation needs for the semiconductor silicon wafer, further improving the accuracy and etching efficiency of the VPE process.

A method for forming a semiconductor structure includes: providing a substrate; forming a conductive structure material layer on the substrate; forming a mask layer on part of the conductive structure material layer; forming a repair film on the sidewall surface of the mask layer, wherein the roughness of the repair film surface is lower than that of the sidewall surface of the mask layer; etching the conductive structure material layer using the mask layer and the repair film as masks to form a plurality of conductive structures on the substrate. Thus, the performance of the semiconductor structure is improved.

The utility model relates to flexible circuit technical field, concretely for a kind of flexible circuit substrate, comprising: PI base material, PI base material is provided with functional layer, functional layer includes the buffer layer of TiO2 or SiO2, CrxOy material setting on PI base material, sputter Cu layer setting on buffer layer and electroplated copper layer setting on sputter Cu layer, through the setting of the buffer layer of TiO2 or SiO2, CrxOy material, compared with the nickel-chromium alloy layer set in traditional technology, need not secondary etching, reduce production procedure, can reduce material impedance, improve material performance, reduce production cost, reduce the generation of etching waste liquid, more environmental protection.

This invention provides a method, apparatus, and semiconductor device for atomic layer etching of hafnium oxide. The method includes performing multiple cycles of etching on the hafnium oxide layer on the top surface of the device to be etched within a reaction chamber until the hafnium oxide layer reaches the target etching requirement. Each cycle includes: adjusting the temperature of the device to be etched to a target reaction temperature; providing a process gas containing a chlorine-based gas; dissociating the process gas into a plasma containing ions and chlorine radicals; filtering the ions in the plasma to obtain chlorine radicals, and reacting the chlorine radicals with the top surface of the hafnium oxide layer at the target reaction temperature to generate a hafnium tetrachloride layer; and heating the device to be etched to a target sublimation temperature to vaporize and discharge the hafnium tetrachloride layer. This invention can reduce the damage to hafnium oxide during etching and achieve higher etching uniformity and precision.

The embodiment of the application provides an etching endpoint monitoring method and device, the method comprises the following steps: obtaining the spectrum data collected by a spectrometer in an etching process, and performing filtering processing on the spectrum data; performing data dimension reduction on the filtered spectrum data to obtain at least one characteristic wave band of the spectrum data; performing numerical analysis on the at least one characteristic wave band of the spectrum data to determine a data model of the spectrum data; monitoring the etching state of the real-time collected spectrum data through the data model of the spectrum data, and controlling the etching process according to the monitoring result; the application can effectively reduce the data dimension in the etching process, reduce data redundancy, reduce the misjudgment rate of the interference signal on the plasma etching result, greatly improve the robustness of the plasma etching process state monitoring model, and realize the automatic management of the etching monitoring process, and improve the etching precision.

This invention provides a method for metal interconnection of flexible circuits, comprising the following steps: coating a first dielectric layer; depositing a first metal layer and photolithographically etching a first metal pattern; coating a second dielectric layer and photolithographically etching interlayer vias; depositing a second metal layer and photolithographically etching a second metal pattern, wherein the second metal pattern overlaps with the first metal pattern; coating a third dielectric layer and photolithographically etching contact windows; and fabricating metal contacts. The beneficial effects of this invention are that the overlapping of the upper and lower metal layer patterns improves the reliability of vertical interconnection between metal layers, reduces lateral etching, improves etching accuracy, effectively avoids open circuits in flexible circuits, enhances the interconnection quality of flexible circuits, improves the fracture resistance of fine lines in flexible circuits, facilitates high-density wiring in flexible circuits, constructs thick electrical contact points, reduces contact resistance, improves signal transmission quality, and enhances the mechanical strength and wear resistance of the contacts.

The embodiment of the present application provides a high-precision mask plate and a method for manufacturing the same. The mask plate includes: a main frame and a film layer group including a pixel opening pattern, the film layer group is manufactured based on a silicon-based or glass-based substrate and a dry etching process; the film layer group is fixed to one side of the main frame. The high-precision mask plate of the present application does not require a stretching process, thus avoiding the problem of film layer evaporation deviation caused by the low positioning accuracy of the stretching, and the film layer group in the present application is manufactured based on a silicon-based or glass-based substrate and a dry etching process, so the high-precision mask plate of the embodiment of the present application has a higher pixel density and pixel position accuracy.

The invention provides a silicon-based OLED device and a preparation method thereof. The preparation method comprises the following steps: providing a base; preparing a driving circuit and a patterned anode on the base; depositing a pixel definition layer; etching the pixel definition layer by adopting a dry etching process to form an undercut structure; sequentially forming a first pixel layer, a cathode and a packaging layer on one side of the undercut structure; sequentially removing the packaging layer, the cathode and the first pixel layer at the positions of the second region and the third region on one side of the undercut structure through etching; sequentially forming a second pixel layer, a cathode and a packaging layer in the second region and the third region on one side of the undercut structure; sequentially removing the packaging layer, the cathode and the second pixel layer at the position of a third region on one side of the undercut structure through etching; and sequentially forming a third pixel layer, a cathode and a packaging layer in a third region on one side of the undercut structure. The method for preparing the RGB direct light-emitting Micro OLED is simple in process, high in reliability, good in performance and small in anode damage.

The present application relates to the field of semiconductor manufacturing technology, and provides a plasma etching device and method. The plasma etching device includes: a process chamber; a wafer heating device, when the wafer is transferred into the process chamber, the wafer heating device is located above the wafer; the wafer heating device is configured to: before plasma etching, when the process chamber is evacuated, the wafer heating device preheats the wafer until the internal air pressure value of the process chamber is reduced to a preset air pressure value. The plasma etching device can effectively shorten the process cycle and significantly improve the overall production capacity of the machine.

The utility model provides a vertical developing spray tray device which comprises two spray trays which are oppositely arranged, a swing mechanism is arranged above each spray tray, and a clamp for loading a circuit tray moves and passes between the two spray trays during spraying; the swing mechanism is used for driving the corresponding spraying disc to move up and down and comprises a bottom plate, a servo electric cylinder, a driving plate and pull rods, the servo electric cylinder is fixed to the upper portion of the bottom plate, the output end of the servo electric cylinder is connected with the driving plate, the two pull rods are symmetrically arranged on the two sides of the driving plate, and the lower ends of the pull rods are connected with the spraying disc. The circuit board etching device is high in etching precision, good in etching effect, wide in application range and suitable for etching, developing and film removing of high-requirement and fine circuit boards.

The invention belongs to the technical field of flexible sensor manufacturing, and relates to a micro bump preparation process of a flexible sensor, and a photoetching template position detection device and a detection method for the process. The preparation process comprises the following steps: forming a groove in a position, corresponding to a glue column, on the surface of a silicon wafer substrate, spin-coating photoresist on the surface of the silicon wafer substrate of the flexible sensor, and filling the photoresist in the groove; a photoetching template is adopted to conduct photoetching on the cured photoresist, the photoetching template is provided with a shading area corresponding to the position of the target glue column, development processing is conducted after exposure, and a glue column array is formed on the surface of the silicon wafer substrate; carrying out hot reflux on the silicon wafer substrate, enabling the rubber column array to be shrunk into a rubber ball array through surface tension, and embedding the bottom of the rubber ball into a groove of the silicon wafer substrate; and step etching is carried out on the left side and the right side of the rubber ball by adopting a dry etching process, and then the spherical morphology of the salient point is etched to obtain the micro salient point. According to the invention, the rubber ball can be prevented from collapsing outwards during hot reflux, and the micro convex points can be smoothly formed in the subsequent spherical crown etching process.

The invention discloses a single-chip type cleaning machine liquid spraying device and an etching device, and belongs to the technical field of microelectronic packaging, and the single-chip type cleaning machine liquid spraying device comprises a spraying head body and a nozzle body; the sprayer body and the nozzle body are each internally provided with a liquid medicine channel, the sprayer body and the nozzle body are coaxially arranged and detachably connected, the liquid medicine channels of the sprayer body and the nozzle body are coaxially communicated, and the upper end of the sprayer body is used for being connected with the liquid medicine channels. The flow area of the liquid medicine channel of the nozzle body is smaller than that of the liquid medicine channel of the sprayer body, and the spraying pressure of liquid medicine is regulated and controlled by reducing the flow area of the nozzle body; according to the device, by reducing the flow area of the liquid medicine channel of the nozzle body, the flow speed of liquid medicine passing through the nozzle is increased under the same flow, so that the spraying pressure is improved, the formation of lateral erosion and black edges is reduced, the etching precision and the production efficiency are improved, and meanwhile, the device is convenient to maintain and adjust, and has remarkable advantages and practical value.

The invention provides a processing device and method of a field emission cathode and the field emission cathode, and belongs to the technical field of laser processing, and the processing device of the field emission cathode comprises a laser used for emitting laser; the beam expander is arranged at the output end of the laser and used for converting the laser into beam-expanded laser; the spatial light modulator is arranged at the output end of the beam expander and used for converting the beam-expanded laser into modulated laser according to a preset pattern; the optical scaling system is arranged at the output end of the spatial light modulator and used for converting the modulated laser into scaled laser; and the focusing objective lens is arranged at the output end of the optical zooming system and is used for converting the zoomed laser into focused laser. According to the field emission cathode processing device provided by the embodiment of the invention, the field emission cathode can be processed through laser etching, the field emission cathode with good morphology consistency and excellent uniformity can be formed, and the field emission cathode processing device is suitable for large-scale production and processing of the field emission cathode.

The application provides an inconel alloy plate and a surface control method thereof. The surface control method of the inconel alloy plate comprises the following steps: a thinning step, which comprises rolling the incoming material by at least two passes using a first work roll and rolling oil with a first kinematic viscosity, so as to obtain a thinned plate; in the rolling process, the rolling oil between the first work roll and the incoming material forms an oil film with a first thickness; a smoothing step, which comprises rolling the thinned plate by at least one pass using a second work roll and rolling oil with a second kinematic viscosity; in the rolling process, the rolling oil between the second work roll and the thinned plate forms an oil film with a second thickness; the oil film with the second thickness extrudes the surface of the thinned plate to form a plurality of oil pits, so as to obtain the inconel alloy plate. The oil pits obtained by extrusion of the oil film have a small planar area and a shallow depth, and the AOI defect detection rate in the subsequent precise metal mask manufacturing process can be reduced.

The present invention provides a semiconductor device with an ohmic metal isolation layer and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a gallium nitride substrate, and depositing a first dielectric layer; depositing a diffusion barrier layer; preparing an ohmic contact hole; depositing an ohmic metal layer, and annealing the ohmic metal layer; depositing a titanium nitride metal layer; preparing an ohmic electrode; depositing a dielectric stack; preparing a gate region and a field plate region; preparing a gate metal and a gate field plate; depositing an insulating layer; preparing contact holes for the gate, source and drain; depositing a metal layer, and preparing a gate, source and drain. Annealing is performed before depositing the titanium nitride metal layer on the ohmic metal layer, so that the titanium nitride metal layer and the ohmic metal layer are not annealed at the same time, effectively solving the problem of ohmic contact resistance degradation; the diffusion barrier layer can prevent the ohmic metal from diffusing to the first dielectric layer during the annealing process, effectively improving chip reliability, and facilitating the realization of a smaller device size.

The invention provides a preparation method of a back contact solar cell, and belongs to the technical field of solar photovoltaic.The preparation method comprises the steps that an organic polymer mask layer is formed in a target area, and then a polycrystalline silicon layer in a non-target area is removed through a fluorine-containing gas etching process; the polycrystalline silicon layer in the area needing to be removed can be conveniently removed by utilizing the difference of selective etching of fluorine-containing gas etching on organic polymer and polycrystalline silicon, the oxide layer or the polycrystalline silicon layer is used as an etching stop layer, extra consumption of a silicon substrate material is reduced, the oxide layer and the polycrystalline silicon layer below a mask cannot be corroded, and the performance of the device is improved. Electric leakage of a finished battery is avoided, and the efficiency and the performance of the solar battery are improved.

The invention discloses a heterojunction solar cell and a manufacturing method and equipment thereof. Respectively forming at least one front surface passivation layer made of an intrinsic amorphous silicon-based material and at least one back surface passivation layer made of an intrinsic amorphous silicon-based material on the front surface and the back surface of the silicon substrate; respectively forming at least one front doping layer and at least one back doping layer which are made of microcrystalline silicon-based materials or nanocrystalline silicon-based materials on the at least one front passivation layer and the at least one back passivation layer; in the process of depositing at least one of the front doping layer and the back doping layer, the silicon substrate is placed on a carrier plate, the upper surface of the carrier plate is provided with one or more silicon substrate containing areas, and at least one part of the periphery of each containing area is provided with a flange. The manufacturing process of the heterojunction solar cell is simplified, and the performance of the heterojunction solar cell is improved.

The invention relates to the technical field of precision metal processing, in particular to an etching method for a stainless steel cooling fin of a switch. The etching method of the stainless steel radiating fin of the switch comprises the following steps: S1, deoiling, cleaning and activating; s2, silk-screen printing of photosensitive ink; s3, the stainless steel substrate treated in the step S2 is put into chemical etching liquid to be subjected to etching treatment; and S4, the etched stainless steel substrate is soaked in a sodium hydroxide solution with the temperature being 80 DEG C and the mass concentration being 5% to remove the surface photosensitive ink, then deionized water is adopted for cleaning, drying treatment is conducted, and the stainless steel cooling fin of the switch is obtained. According to the etching method disclosed by the invention, by accurately controlling the procedures of oil removal cleaning, activation, photosensitive ink screen printing and surface etching, efficient and accurate etching of the stainless steel radiating fin of the switch is realized, so that the width error of the etching groove is less than or equal to 0.005 mm, the edge flatness of the groove is high, and the depth error of the etching groove is less than or equal to 0.01 mm.

The invention discloses a metal auxiliary chemical etching method based on an ultrasonic standing wave sound field, and the method employs the ultrasonic standing wave sound field to enable suspended metal catalysis balls to be arranged on the surface of an etching substrate along sound pressure nodes, so as to induce the self-assembly of the metal catalysis balls, and form a regular particle array template. By means of the acoustic resonance mode in the fluid channel, accurate control and patterned arrangement of the metal catalysis balls are achieved, the distribution uniformity and arrangement orderliness of the metal catalysis balls can be remarkably improved, more accurate and quicker metal catalysis ball distribution is provided for the subsequent etching process, and therefore the etching accuracy and efficiency are improved. Besides, according to the scheme, the ultrasonic standing wave sound field particle self-assembly technology is combined with the MACE technology, the defects of the prior art in the aspects of large-scale manufacturing and structural precision are overcome, and the application potential of the MACE technology in large-scale manufacturing and high-precision nanostructures is remarkably improved.

The invention belongs to the technical field of filtering net piece etching positioning, and particularly relates to a positioning device for filtering net piece etching, which comprises a machine body, one side of the machine body is fixedly connected with a driving motor, the driving motor drives an etching roller, and the etching roller is used for spraying ion beams to generate physical or chemical reaction with the surface of a filtering net piece so as to remove materials. An adjusting assembly is arranged above the machine body and comprises a fixing frame, the upper surface of the fixing frame is fixedly connected with a fixing motor, the output end of the fixing motor is fixedly connected with a lead screw, the lead screw drives a fixing shaft in a reciprocating mode, and the fixing shaft is fixedly connected with the adjusting assembly. The circumferential surface of the fixed shaft is sleeved with an auxiliary roller, and the auxiliary roller is used for assisting the etching roller in positioning the filter plate in the etching process; and by arranging the adjusting assembly and the beating assembly, the problem that the subsequent etching quality is unqualified due to deformation of the metal filter plate caused by existing positioning and clamping is solved.

The application provides a through hole etching method, by forming a gray scale mask layer with a specific inclination angle alpha, bottom width and thickness, the problems of angle regulation inflexibility, narrow process window, large angle tolerance and poor wafer level etching uniformity in the prior art are solved. By adjusting the inclination angle alpha of the mask layer, continuous adjustment and accurate control of the through hole inclination angle beta are realized, thereby significantly improving the flexibility and process window of the through hole etching; by designing the thickness of the mask layer, the excessive consumption of the gray scale mask layer is avoided; by optimizing the inclined surface of the gray scale mask layer to be ladder-shaped, the gray scale exposure time during the formation of the gray scale mask layer is greatly shortened, thereby improving the efficiency, and forming a through hole ladder with the same number of steps as the gray scale mask layer; by designing the bottom width of the gray scale mask layer according to the bottom width of the to-be-formed through hole, flexible adjustment of the through hole width is realized.