3results about How to "Improve etching precision" patented technology

This invention relates to the field of vapor phase etching (VPE) apparatus technology, specifically a double-sided VPE apparatus for semiconductor silicon wafers. The apparatus includes a VPE apparatus body, a silicon wafer transfer mechanism at the upper end of the apparatus body, an etching chamber fixedly mounted on the outer side of the apparatus body, and a mounting base fixedly mounted on the upper end of the etching chamber. By combining the VPE mechanism with a central air-guiding mechanism, stable adsorption of the semiconductor silicon wafer is ensured during the etching process, avoiding vibration and improving etching efficiency and precision. A Bernoulli-style chuck structure is formed by the cooperation of the air-guiding support stage and the central stage, stably "fixing" the silicon wafer above the air-guiding support stage, minimizing contact with the semiconductor silicon wafer, avoiding physical damage and contamination, and simultaneously enabling multi-directional airflow distribution to meet auxiliary heat dissipation needs for the semiconductor silicon wafer, further improving the accuracy and etching efficiency of the VPE process.

The utility model relates to flexible circuit technical field, concretely for a kind of flexible circuit substrate, comprising: PI base material, PI base material is provided with functional layer, functional layer includes the buffer layer of TiO2 or SiO2, CrxOy material setting on PI base material, sputter Cu layer setting on buffer layer and electroplated copper layer setting on sputter Cu layer, through the setting of the buffer layer of TiO2 or SiO2, CrxOy material, compared with the nickel-chromium alloy layer set in traditional technology, need not secondary etching, reduce production procedure, can reduce material impedance, improve material performance, reduce production cost, reduce the generation of etching waste liquid, more environmental protection.

This invention provides a method for metal interconnection of flexible circuits, comprising the following steps: coating a first dielectric layer; depositing a first metal layer and photolithographically etching a first metal pattern; coating a second dielectric layer and photolithographically etching interlayer vias; depositing a second metal layer and photolithographically etching a second metal pattern, wherein the second metal pattern overlaps with the first metal pattern; coating a third dielectric layer and photolithographically etching contact windows; and fabricating metal contacts. The beneficial effects of this invention are that the overlapping of the upper and lower metal layer patterns improves the reliability of vertical interconnection between metal layers, reduces lateral etching, improves etching accuracy, effectively avoids open circuits in flexible circuits, enhances the interconnection quality of flexible circuits, improves the fracture resistance of fine lines in flexible circuits, facilitates high-density wiring in flexible circuits, constructs thick electrical contact points, reduces contact resistance, improves signal transmission quality, and enhances the mechanical strength and wear resistance of the contacts.