7results about How to "Improve etching precision" patented technology

This invention relates to the field of vapor phase etching (VPE) apparatus technology, specifically a double-sided VPE apparatus for semiconductor silicon wafers. The apparatus includes a VPE apparatus body, a silicon wafer transfer mechanism at the upper end of the apparatus body, an etching chamber fixedly mounted on the outer side of the apparatus body, and a mounting base fixedly mounted on the upper end of the etching chamber. By combining the VPE mechanism with a central air-guiding mechanism, stable adsorption of the semiconductor silicon wafer is ensured during the etching process, avoiding vibration and improving etching efficiency and precision. A Bernoulli-style chuck structure is formed by the cooperation of the air-guiding support stage and the central stage, stably "fixing" the silicon wafer above the air-guiding support stage, minimizing contact with the semiconductor silicon wafer, avoiding physical damage and contamination, and simultaneously enabling multi-directional airflow distribution to meet auxiliary heat dissipation needs for the semiconductor silicon wafer, further improving the accuracy and etching efficiency of the VPE process.

The utility model relates to flexible circuit technical field, concretely for a kind of flexible circuit substrate, comprising: PI base material, PI base material is provided with functional layer, functional layer includes the buffer layer of TiO2 or SiO2, CrxOy material setting on PI base material, sputter Cu layer setting on buffer layer and electroplated copper layer setting on sputter Cu layer, through the setting of the buffer layer of TiO2 or SiO2, CrxOy material, compared with the nickel-chromium alloy layer set in traditional technology, need not secondary etching, reduce production procedure, can reduce material impedance, improve material performance, reduce production cost, reduce the generation of etching waste liquid, more environmental protection.

This invention provides a method, apparatus, and semiconductor device for atomic layer etching of hafnium oxide. The method includes performing multiple cycles of etching on the hafnium oxide layer on the top surface of the device to be etched within a reaction chamber until the hafnium oxide layer reaches the target etching requirement. Each cycle includes: adjusting the temperature of the device to be etched to a target reaction temperature; providing a process gas containing a chlorine-based gas; dissociating the process gas into a plasma containing ions and chlorine radicals; filtering the ions in the plasma to obtain chlorine radicals, and reacting the chlorine radicals with the top surface of the hafnium oxide layer at the target reaction temperature to generate a hafnium tetrachloride layer; and heating the device to be etched to a target sublimation temperature to vaporize and discharge the hafnium tetrachloride layer. This invention can reduce the damage to hafnium oxide during etching and achieve higher etching uniformity and precision.

This invention provides a method for metal interconnection of flexible circuits, comprising the following steps: coating a first dielectric layer; depositing a first metal layer and photolithographically etching a first metal pattern; coating a second dielectric layer and photolithographically etching interlayer vias; depositing a second metal layer and photolithographically etching a second metal pattern, wherein the second metal pattern overlaps with the first metal pattern; coating a third dielectric layer and photolithographically etching contact windows; and fabricating metal contacts. The beneficial effects of this invention are that the overlapping of the upper and lower metal layer patterns improves the reliability of vertical interconnection between metal layers, reduces lateral etching, improves etching accuracy, effectively avoids open circuits in flexible circuits, enhances the interconnection quality of flexible circuits, improves the fracture resistance of fine lines in flexible circuits, facilitates high-density wiring in flexible circuits, constructs thick electrical contact points, reduces contact resistance, improves signal transmission quality, and enhances the mechanical strength and wear resistance of the contacts.

The invention belongs to the technical field of flexible sensor manufacturing, and relates to a micro bump preparation process of a flexible sensor, and a photoetching template position detection device and a detection method for the process. The preparation process comprises the following steps: forming a groove in a position, corresponding to a glue column, on the surface of a silicon wafer substrate, spin-coating photoresist on the surface of the silicon wafer substrate of the flexible sensor, and filling the photoresist in the groove; a photoetching template is adopted to conduct photoetching on the cured photoresist, the photoetching template is provided with a shading area corresponding to the position of the target glue column, development processing is conducted after exposure, and a glue column array is formed on the surface of the silicon wafer substrate; carrying out hot reflux on the silicon wafer substrate, enabling the rubber column array to be shrunk into a rubber ball array through surface tension, and embedding the bottom of the rubber ball into a groove of the silicon wafer substrate; and step etching is carried out on the left side and the right side of the rubber ball by adopting a dry etching process, and then the spherical morphology of the salient point is etched to obtain the micro salient point. According to the invention, the rubber ball can be prevented from collapsing outwards during hot reflux, and the micro convex points can be smoothly formed in the subsequent spherical crown etching process.

The application provides an inconel alloy plate and a surface control method thereof. The surface control method of the inconel alloy plate comprises the following steps: a thinning step, which comprises rolling the incoming material by at least two passes using a first work roll and rolling oil with a first kinematic viscosity, so as to obtain a thinned plate; in the rolling process, the rolling oil between the first work roll and the incoming material forms an oil film with a first thickness; a smoothing step, which comprises rolling the thinned plate by at least one pass using a second work roll and rolling oil with a second kinematic viscosity; in the rolling process, the rolling oil between the second work roll and the thinned plate forms an oil film with a second thickness; the oil film with the second thickness extrudes the surface of the thinned plate to form a plurality of oil pits, so as to obtain the inconel alloy plate. The oil pits obtained by extrusion of the oil film have a small planar area and a shallow depth, and the AOI defect detection rate in the subsequent precise metal mask manufacturing process can be reduced.

The application provides a through hole etching method, by forming a gray scale mask layer with a specific inclination angle alpha, bottom width and thickness, the problems of angle regulation inflexibility, narrow process window, large angle tolerance and poor wafer level etching uniformity in the prior art are solved. By adjusting the inclination angle alpha of the mask layer, continuous adjustment and accurate control of the through hole inclination angle beta are realized, thereby significantly improving the flexibility and process window of the through hole etching; by designing the thickness of the mask layer, the excessive consumption of the gray scale mask layer is avoided; by optimizing the inclined surface of the gray scale mask layer to be ladder-shaped, the gray scale exposure time during the formation of the gray scale mask layer is greatly shortened, thereby improving the efficiency, and forming a through hole ladder with the same number of steps as the gray scale mask layer; by designing the bottom width of the gray scale mask layer according to the bottom width of the to-be-formed through hole, flexible adjustment of the through hole width is realized.