51results about How to "Improve etching precision" patented technology

The invention discloses a copper etching solution for semiconductor packaging, which mainly comprises, by mass percentage, 1% to 8% of an oxidant, 21% to 40% of an inorganic acid, 6% to 30% of an organic carboxylic acid, 0.001% to 15% of a chelating agent, 0% to 3% of a corrosion inhibitor, and the balance of deionized water; the organic carboxylic acid is composed of a first carboxylic acid and a second carboxylic acid, the first carboxylic acid is selected from at least one of a monocarboxylic acid and a dicarboxylic acid, and the second carboxylic acid is at least one of a tricarboxylic acid or higher. The copper etching solution for semiconductor packaging of the invention reduces the etching speed and improves the etching accuracy by optimizing the organic carboxylic acid and adjusting the etching solution component content, completely etches and removes the copper seed layer, and reduces the side loss of the copper etching solution to other copper layers in the redistribution layer and the metal bump, so that the morphology of the redistribution layer and the metal bump is more regular, and the structural stability of the redistribution layer and the metal bump is improved. The invention also discloses an etching method based on the copper etching solution for semiconductor packaging.

The invention discloses a preparation method of a titanium etching solution, which comprises the following steps: S1, dividing 88.75-96.25 parts of water into three parts of A, B and C according to a volume ratio of 10: 1: 1, and the two parts of B and C are equal in quantity; s2, mixing 2.5-7.5 parts of ferric salt with B parts of water to obtain ferric salt premixed liquid; s3, mixing 1.25-3.75 parts of ammonium bifluoride with C parts of water to obtain an ammonium bifluoride premixed solution; s4, mixing the iron salt premixed solution obtained in the step S2 with the ammonium bifluoride premixed solution obtained in the step S3 to obtain an intermediate mixed solution; and S5, slowly adding the part A of water into the intermediate mixed solution obtained in the step S4, and detecting for multiple times to obtain the final titanium etching solution. According to the invention, on one hand, the etching effect on peptide products is ensured, and on the other hand, environmental pollution and harm to human bodies are reduced.

The invention belongs to the technical field of solar photovoltaics, and particularly relates to a back contact solar cell and a preparation method thereof. According to the method, the doped silicon oxide layer in the area needing to be removed is effectively removed by utilizing the strong directionality of dry fluorine etching and the difference of selective etching of the organic polymer and the silicon oxide, so that the doped silicon oxide layer and the doped polycrystalline silicon layer which are arranged below the organic polymer mask area are well protected. According to the invention, the doped silicon oxide layer is removed by adopting the dry fluorine etching, and the dry fluorine etching has good selectivity on the organic polymer mask and the doped silicon oxide layer, so that the loss of wet etching in the transverse direction can be effectively avoided. And the dry fluorine etching is strong in directivity and higher in etching precision. The doped silicon oxide layer in the non-printing area is removed through dry fluorine etching, and meanwhile, a part of the doped polycrystalline silicon layer located below the doped silicon oxide layer is correspondingly etched, so that the etching pressure of the subsequent doped polycrystalline silicon layer is reduced, and the production efficiency is further improved.

This invention relates to the field of vapor phase etching (VPE) apparatus technology, specifically a double-sided VPE apparatus for semiconductor silicon wafers. The apparatus includes a VPE apparatus body, a silicon wafer transfer mechanism at the upper end of the apparatus body, an etching chamber fixedly mounted on the outer side of the apparatus body, and a mounting base fixedly mounted on the upper end of the etching chamber. By combining the VPE mechanism with a central air-guiding mechanism, stable adsorption of the semiconductor silicon wafer is ensured during the etching process, avoiding vibration and improving etching efficiency and precision. A Bernoulli-style chuck structure is formed by the cooperation of the air-guiding support stage and the central stage, stably "fixing" the silicon wafer above the air-guiding support stage, minimizing contact with the semiconductor silicon wafer, avoiding physical damage and contamination, and simultaneously enabling multi-directional airflow distribution to meet auxiliary heat dissipation needs for the semiconductor silicon wafer, further improving the accuracy and etching efficiency of the VPE process.

The embodiment of the invention discloses a preparation method of a semiconductor structure, relates to the technical field of semiconductors, and can reduce the manufacturing process complexity and cost of a mask layer and improve the product performance of the semiconductor structure prepared based on the mask layer. The preparation method comprises the following steps: providing a semiconductor substrate; forming a sacrificial structure on one side of the semiconductor substrate; the surface of one side, far away from the semiconductor substrate, of the sacrificial structure is higher than the surface of the semiconductor substrate in the direction perpendicular to and far away from the semiconductor substrate. And forming an initial hard mask layer on the side, away from the semiconductor substrate, of the sacrificial structure. And grinding one side of the initial hard mask layer away from the semiconductor substrate until the surface of one side of the sacrificial structure away from the semiconductor substrate is exposed. And removing the sacrificial structure, and reserving a part of the initial hard mask layer which does not cover the sacrificial structure to form a hard mask layer with an opening. The semiconductor substrate is etched using the hard mask layer.

The invention discloses an aluminum etching solution with low surface tension. The aluminum etching solution comprises phosphoric acid, nitric acid, acetic acid, deionized water and a functional additive, the functional additive is prepared by carrying out a copolymerization reaction on alkylene phosphonic acid, polyol diene ether and an olefin-containing biquinoline derivative, and then reacting part of phosphonic acid groups with part of sodium hydroxide or potassium hydroxide. The low-surface-tension aluminum etching liquid disclosed by the invention has relatively low surface tension and can better wet the aluminum surface, so that the etching process is accelerated, the etching uniformity and precision are improved, the lateral etching phenomenon is reduced, and the etched pattern edge is clearer and the line is finer. The invention further discloses a preparation method and application of the low-surface tension aluminum etching liquid, and the method is simple and easy to implement and low in cost and has wide industrial application prospects. According to the etching solution and the preparation method thereof, the production quality and efficiency of the printed circuit board can be remarkably improved, and the requirement of the electronic manufacturing industry for a high-precision etching process is met.

A method for forming a semiconductor structure includes: providing a substrate; forming a conductive structure material layer on the substrate; forming a mask layer on part of the conductive structure material layer; forming a repair film on the sidewall surface of the mask layer, wherein the roughness of the repair film surface is lower than that of the sidewall surface of the mask layer; etching the conductive structure material layer using the mask layer and the repair film as masks to form a plurality of conductive structures on the substrate. Thus, the performance of the semiconductor structure is improved.

The utility model relates to flexible circuit technical field, concretely for a kind of flexible circuit substrate, comprising: PI base material, PI base material is provided with functional layer, functional layer includes the buffer layer of TiO2 or SiO2, CrxOy material setting on PI base material, sputter Cu layer setting on buffer layer and electroplated copper layer setting on sputter Cu layer, through the setting of the buffer layer of TiO2 or SiO2, CrxOy material, compared with the nickel-chromium alloy layer set in traditional technology, need not secondary etching, reduce production procedure, can reduce material impedance, improve material performance, reduce production cost, reduce the generation of etching waste liquid, more environmental protection.

The utility model provides vertical developing equipment for a fine circuit board, which comprises a first fluid module and a second fluid module which are arranged in parallel, the particle size of liquid medicine particles sprayed by the first fluid module is 100-1000 microns, the particle size of liquid medicine particles sprayed by the second fluid module is 5-40 microns, and the vertical developing equipment comprises a clamp, a spraying disc and a swinging mechanism for driving the spraying disc to move, a circuit board is loaded on the clamp and moves in a vertical state between the first fluid module and the second fluid module through the conveying mechanism, the two spraying discs are symmetrically arranged on the front side and the rear side of the clamp, and each swinging mechanism independently drives the corresponding spraying disc to move up and down. According to the utility model, the high-precision development etching of the fine circuit board is realized, the cost is low, and the universality is wide.

This invention provides a method, apparatus, and semiconductor device for atomic layer etching of hafnium oxide. The method includes performing multiple cycles of etching on the hafnium oxide layer on the top surface of the device to be etched within a reaction chamber until the hafnium oxide layer reaches the target etching requirement. Each cycle includes: adjusting the temperature of the device to be etched to a target reaction temperature; providing a process gas containing a chlorine-based gas; dissociating the process gas into a plasma containing ions and chlorine radicals; filtering the ions in the plasma to obtain chlorine radicals, and reacting the chlorine radicals with the top surface of the hafnium oxide layer at the target reaction temperature to generate a hafnium tetrachloride layer; and heating the device to be etched to a target sublimation temperature to vaporize and discharge the hafnium tetrachloride layer. This invention can reduce the damage to hafnium oxide during etching and achieve higher etching uniformity and precision.

The invention relates to the technical field of semiconductor manufacturing, and provides a plasma etching device and method. The plasma etching apparatus includes: a process chamber; the wafer heating device is positioned above the wafer when the wafer is conveyed into the process cavity; and the wafer heating device is configured to preheat the wafer until the internal air pressure value of the process cavity is reduced to a preset air pressure value when the process cavity is subjected to air exhaust before plasma etching. According to the plasma etching device, the process period can be effectively shortened, and the overall productivity of a machine table is remarkably improved.

The embodiment of the application provides an etching endpoint monitoring method and device, the method comprises the following steps: obtaining the spectrum data collected by a spectrometer in an etching process, and performing filtering processing on the spectrum data; performing data dimension reduction on the filtered spectrum data to obtain at least one characteristic wave band of the spectrum data; performing numerical analysis on the at least one characteristic wave band of the spectrum data to determine a data model of the spectrum data; monitoring the etching state of the real-time collected spectrum data through the data model of the spectrum data, and controlling the etching process according to the monitoring result; the application can effectively reduce the data dimension in the etching process, reduce data redundancy, reduce the misjudgment rate of the interference signal on the plasma etching result, greatly improve the robustness of the plasma etching process state monitoring model, and realize the automatic management of the etching monitoring process, and improve the etching precision.

The utility model discloses an attached non-wear protection semiconductor photomask support assembly, and particularly relates to the field of semiconductor device manufacturing, the attached non-wear protection semiconductor photomask support assembly comprises a bottom plate, the top of the bottom plate is provided with two supporting plates, one side of each supporting plate is provided with a positioning mechanism, the top of each supporting plate is provided with an adjusting mechanism, and the adjusting mechanisms are arranged on the bottom plate. Wherein the adjusting mechanism comprises a first electric telescopic rod arranged at the top of the supporting plate, a fixing frame is arranged at the top of the first electric telescopic rod, a mask plate body is arranged in the fixing frame, a mask groove is formed in the mask plate body, and a mask pattern is arranged in the mask groove; wherein a support column is arranged on one side of the bottom plate. According to the utility model, the use effect of the device is improved, the distance between the condensation frame and the mask plate body can be conveniently adjusted, the shadow effect caused by the substrate plate is avoided, the film quality is ensured, and the use effect is enhanced.

This invention provides a method for metal interconnection of flexible circuits, comprising the following steps: coating a first dielectric layer; depositing a first metal layer and photolithographically etching a first metal pattern; coating a second dielectric layer and photolithographically etching interlayer vias; depositing a second metal layer and photolithographically etching a second metal pattern, wherein the second metal pattern overlaps with the first metal pattern; coating a third dielectric layer and photolithographically etching contact windows; and fabricating metal contacts. The beneficial effects of this invention are that the overlapping of the upper and lower metal layer patterns improves the reliability of vertical interconnection between metal layers, reduces lateral etching, improves etching accuracy, effectively avoids open circuits in flexible circuits, enhances the interconnection quality of flexible circuits, improves the fracture resistance of fine lines in flexible circuits, facilitates high-density wiring in flexible circuits, constructs thick electrical contact points, reduces contact resistance, improves signal transmission quality, and enhances the mechanical strength and wear resistance of the contacts.

The present invention belongs to the field of integrated circuit electronic chemicals, and specifically relates to an etching solution for selectively etching an AlCu layer relative to a laminated metal and a preparation method thereof. The etching solution is mainly used for selectively etching an AlCu alloy layer relative to a laminated metal (composed of a photoresist, an AlCu alloy layer, a W layer, a TiN layer and a Ti layer from top to bottom), and its composition includes an oxidant, a corrosive agent, an additive, a complexing agent, a leveling agent and ultrapure water. The present invention provides an etching solution for selectively etching an AlCu layer relative to a laminated metal and a preparation method thereof. The use of the etching solution according to the method can not only effectively control the etching of the AlCu layer in the laminated metal while other metal layers are not etched, but also has high etching accuracy and good etching morphology, and has no damage to the electrochemical properties of the substrate.

The embodiment of the present application provides a high-precision mask plate and a method for manufacturing the same. The mask plate includes: a main frame and a film layer group including a pixel opening pattern, the film layer group is manufactured based on a silicon-based or glass-based substrate and a dry etching process; the film layer group is fixed to one side of the main frame. The high-precision mask plate of the present application does not require a stretching process, thus avoiding the problem of film layer evaporation deviation caused by the low positioning accuracy of the stretching, and the film layer group in the present application is manufactured based on a silicon-based or glass-based substrate and a dry etching process, so the high-precision mask plate of the embodiment of the present application has a higher pixel density and pixel position accuracy.

The invention discloses an etching machine for electronic wafer production, and relates to the technical field of etching, the etching machine comprises an etching box and a limiting part used for limiting an electronic wafer, the limiting part is provided with a connecting part, the etching box is provided with a driving part connected with the connecting part, and the driving part is connected with the connecting part. And the driving part is used for driving the limiting part to move through the connecting part, so that the limiting part drives the electronic chip to lift and reciprocate in the horizontal direction. According to the invention, the driving part and the connecting part are arranged, so that the electronic wafers can be lined up in the etching box and do reciprocating motion in the horizontal direction, and the etching liquid in the etching box can directly etch the electronic wafers from the sides, covered with masks, of the electronic wafers, so that the etching precision of the electronic wafers is improved, and the production efficiency of the electronic wafers is improved. The covering protection effect of the mask is guaranteed, and the processing quality of the wafer is improved.

The invention discloses a method for continuously etching a PTFE (Polytetrafluoroethylene) tube, and relates to the technical field of PTFE tubes. The method comprises four main steps of pre-cleaning, etching, multi-stage rinsing and drying. Firstly, oil stains and impurities on the surface of the PTFE pipe are removed through a cleaning device; then, the pipe is continuously conveyed into an etching tank containing a sodium naphthalene etching agent (containing an etching synergist) for etching, and the etching depth is adjusted by controlling the passing speed and the concentration of the etching solution; after etching, the pipe enters a multi-stage rinsing tank, and residual etching liquid is efficiently removed by utilizing reverse water flow. And finally, moisture is thoroughly removed through a hot air drying device, so that the surface of the PTFE pipe achieves uniform roughness, and preparation is made for subsequent treatment procedures.

The invention provides a silicon-based OLED device and a preparation method thereof. The preparation method comprises the following steps: providing a base; preparing a driving circuit and a patterned anode on the base; depositing a pixel definition layer; etching the pixel definition layer by adopting a dry etching process to form an undercut structure; sequentially forming a first pixel layer, a cathode and a packaging layer on one side of the undercut structure; sequentially removing the packaging layer, the cathode and the first pixel layer at the positions of the second region and the third region on one side of the undercut structure through etching; sequentially forming a second pixel layer, a cathode and a packaging layer in the second region and the third region on one side of the undercut structure; sequentially removing the packaging layer, the cathode and the second pixel layer at the position of a third region on one side of the undercut structure through etching; and sequentially forming a third pixel layer, a cathode and a packaging layer in a third region on one side of the undercut structure. The method for preparing the RGB direct light-emitting Micro OLED is simple in process, high in reliability, good in performance and small in anode damage.

The utility model provides a rail frame and an etching machine. The rail frame comprises a supporting frame, rollers rotationally installed at the two ends of the supporting frame respectively, supporting plates located on the two sides of the supporting frame and positioning guide rods installed on the supporting plates. Each roller is provided with a positioning groove along the circumferential direction of the roller; the two positioning guide rods respectively support the two rollers, and each positioning guide rod extends into the corresponding positioning groove. The positioning guide rods are installed on the supporting plates, and the idler wheels at the two ends of the supporting frame can slide on the corresponding positioning guide rods through the positioning grooves. When an external driving air cylinder drives the supporting frame to reciprocate, the supporting frame can be prevented from deviating in the width direction of the positioning guide rod under the limiting effect of the positioning groove and the positioning guide rod, it is ensured that the supporting frame reciprocates in the length direction of the positioning guide rod, and therefore the reliability of reciprocating motion of the supporting frame bearing the spraying frame can be improved, and the spraying effect is improved. Therefore, the spraying liquid spraying effect of the spraying frame is improved, and the etching precision and quality can be improved.

The invention discloses a memory test structure and a forming method thereof, and the method comprises the steps: forming an initial memory gate structure on a memory region, which comprises a floating gate structure located on the surface of a first region, a control gate structure located on the surface of the floating gate structure, and a word line gate structure located on the surface of a second region, the floating gate structure comprises a first oxide layer located on the surface of the first region and a floating gate located on the first oxide layer, and the word line gate structure comprises a second oxide layer located on the surface of the second region and a word line gate located on the second oxide layer; forming a first opening in the initial memory gate structure by adopting a first etching process, wherein the first opening exposes the surface of the word line gate structure; removing the word line grid by adopting a second etching process, wherein the difference value of the removal rate of the second etching process to the word line grid material and the removal rate of the second etching process to the second oxide layer material is greater than a first threshold value; and after the word line gate is removed, the second oxide layer is removed to form a memory gate structure on the surface of the first oxide layer, so that the possibility of damage to an active region of the test structure of the memory is reduced.

The present application relates to the field of semiconductor manufacturing technology, and provides a plasma etching device and method. The plasma etching device includes: a process chamber; a wafer heating device, when the wafer is transferred into the process chamber, the wafer heating device is located above the wafer; the wafer heating device is configured to: before plasma etching, when the process chamber is evacuated, the wafer heating device preheats the wafer until the internal air pressure value of the process chamber is reduced to a preset air pressure value. The plasma etching device can effectively shorten the process cycle and significantly improve the overall production capacity of the machine.

The utility model provides a vertical developing spray tray device which comprises two spray trays which are oppositely arranged, a swing mechanism is arranged above each spray tray, and a clamp for loading a circuit tray moves and passes between the two spray trays during spraying; the swing mechanism is used for driving the corresponding spraying disc to move up and down and comprises a bottom plate, a servo electric cylinder, a driving plate and pull rods, the servo electric cylinder is fixed to the upper portion of the bottom plate, the output end of the servo electric cylinder is connected with the driving plate, the two pull rods are symmetrically arranged on the two sides of the driving plate, and the lower ends of the pull rods are connected with the spraying disc. The circuit board etching device is high in etching precision, good in etching effect, wide in application range and suitable for etching, developing and film removing of high-requirement and fine circuit boards.

The invention belongs to the technical field of flexible sensor manufacturing, and relates to a micro bump preparation process of a flexible sensor, and a photoetching template position detection device and a detection method for the process. The preparation process comprises the following steps: forming a groove in a position, corresponding to a glue column, on the surface of a silicon wafer substrate, spin-coating photoresist on the surface of the silicon wafer substrate of the flexible sensor, and filling the photoresist in the groove; a photoetching template is adopted to conduct photoetching on the cured photoresist, the photoetching template is provided with a shading area corresponding to the position of the target glue column, development processing is conducted after exposure, and a glue column array is formed on the surface of the silicon wafer substrate; carrying out hot reflux on the silicon wafer substrate, enabling the rubber column array to be shrunk into a rubber ball array through surface tension, and embedding the bottom of the rubber ball into a groove of the silicon wafer substrate; and step etching is carried out on the left side and the right side of the rubber ball by adopting a dry etching process, and then the spherical morphology of the salient point is etched to obtain the micro salient point. According to the invention, the rubber ball can be prevented from collapsing outwards during hot reflux, and the micro convex points can be smoothly formed in the subsequent spherical crown etching process.

The invention discloses a single-chip type cleaning machine liquid spraying device and an etching device, and belongs to the technical field of microelectronic packaging, and the single-chip type cleaning machine liquid spraying device comprises a spraying head body and a nozzle body; the sprayer body and the nozzle body are each internally provided with a liquid medicine channel, the sprayer body and the nozzle body are coaxially arranged and detachably connected, the liquid medicine channels of the sprayer body and the nozzle body are coaxially communicated, and the upper end of the sprayer body is used for being connected with the liquid medicine channels. The flow area of the liquid medicine channel of the nozzle body is smaller than that of the liquid medicine channel of the sprayer body, and the spraying pressure of liquid medicine is regulated and controlled by reducing the flow area of the nozzle body; according to the device, by reducing the flow area of the liquid medicine channel of the nozzle body, the flow speed of liquid medicine passing through the nozzle is increased under the same flow, so that the spraying pressure is improved, the formation of lateral erosion and black edges is reduced, the etching precision and the production efficiency are improved, and meanwhile, the device is convenient to maintain and adjust, and has remarkable advantages and practical value.

The invention provides a processing device and method of a field emission cathode and the field emission cathode, and belongs to the technical field of laser processing, and the processing device of the field emission cathode comprises a laser used for emitting laser; the beam expander is arranged at the output end of the laser and used for converting the laser into beam-expanded laser; the spatial light modulator is arranged at the output end of the beam expander and used for converting the beam-expanded laser into modulated laser according to a preset pattern; the optical scaling system is arranged at the output end of the spatial light modulator and used for converting the modulated laser into scaled laser; and the focusing objective lens is arranged at the output end of the optical zooming system and is used for converting the zoomed laser into focused laser. According to the field emission cathode processing device provided by the embodiment of the invention, the field emission cathode can be processed through laser etching, the field emission cathode with good morphology consistency and excellent uniformity can be formed, and the field emission cathode processing device is suitable for large-scale production and processing of the field emission cathode.

The application provides an inconel alloy plate and a surface control method thereof. The surface control method of the inconel alloy plate comprises the following steps: a thinning step, which comprises rolling the incoming material by at least two passes using a first work roll and rolling oil with a first kinematic viscosity, so as to obtain a thinned plate; in the rolling process, the rolling oil between the first work roll and the incoming material forms an oil film with a first thickness; a smoothing step, which comprises rolling the thinned plate by at least one pass using a second work roll and rolling oil with a second kinematic viscosity; in the rolling process, the rolling oil between the second work roll and the thinned plate forms an oil film with a second thickness; the oil film with the second thickness extrudes the surface of the thinned plate to form a plurality of oil pits, so as to obtain the inconel alloy plate. The oil pits obtained by extrusion of the oil film have a small planar area and a shallow depth, and the AOI defect detection rate in the subsequent precise metal mask manufacturing process can be reduced.

The present invention provides a semiconductor device with an ohmic metal isolation layer and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a gallium nitride substrate, and depositing a first dielectric layer; depositing a diffusion barrier layer; preparing an ohmic contact hole; depositing an ohmic metal layer, and annealing the ohmic metal layer; depositing a titanium nitride metal layer; preparing an ohmic electrode; depositing a dielectric stack; preparing a gate region and a field plate region; preparing a gate metal and a gate field plate; depositing an insulating layer; preparing contact holes for the gate, source and drain; depositing a metal layer, and preparing a gate, source and drain. Annealing is performed before depositing the titanium nitride metal layer on the ohmic metal layer, so that the titanium nitride metal layer and the ohmic metal layer are not annealed at the same time, effectively solving the problem of ohmic contact resistance degradation; the diffusion barrier layer can prevent the ohmic metal from diffusing to the first dielectric layer during the annealing process, effectively improving chip reliability, and facilitating the realization of a smaller device size.

The invention provides a preparation method of a back contact solar cell, and belongs to the technical field of solar photovoltaic.The preparation method comprises the steps that an organic polymer mask layer is formed in a target area, and then a polycrystalline silicon layer in a non-target area is removed through a fluorine-containing gas etching process; the polycrystalline silicon layer in the area needing to be removed can be conveniently removed by utilizing the difference of selective etching of fluorine-containing gas etching on organic polymer and polycrystalline silicon, the oxide layer or the polycrystalline silicon layer is used as an etching stop layer, extra consumption of a silicon substrate material is reduced, the oxide layer and the polycrystalline silicon layer below a mask cannot be corroded, and the performance of the device is improved. Electric leakage of a finished battery is avoided, and the efficiency and the performance of the solar battery are improved.

The invention discloses a heterojunction solar cell and a manufacturing method and equipment thereof. Respectively forming at least one front surface passivation layer made of an intrinsic amorphous silicon-based material and at least one back surface passivation layer made of an intrinsic amorphous silicon-based material on the front surface and the back surface of the silicon substrate; respectively forming at least one front doping layer and at least one back doping layer which are made of microcrystalline silicon-based materials or nanocrystalline silicon-based materials on the at least one front passivation layer and the at least one back passivation layer; in the process of depositing at least one of the front doping layer and the back doping layer, the silicon substrate is placed on a carrier plate, the upper surface of the carrier plate is provided with one or more silicon substrate containing areas, and at least one part of the periphery of each containing area is provided with a flange. The manufacturing process of the heterojunction solar cell is simplified, and the performance of the heterojunction solar cell is improved.