Etching liquid for copper molybdenum and alloy films as well as preparation method of etching liquid

Abstract

The invention provides an etching liquid for copper molybdenum and alloy films as well as a preparation method of the etching liquid. The etching liquid is prepared from the components including hydrogen peroxide, a hydrogen peroxide stabilizer, an amine pH regulator, a complexing agent, a metal corrosion inhibitor and the balance water; the amine pH regulator is a compound shown in formula 1 and/or formula 2, R1 and R4 are independently selected from C1-4 alkylene, and R2, R3, R5 and R6 are independently selected from single bonds or C2-4 alkylene. By the aid of the etching liquid, the excellent etching precision can be realized, no damage to metallic oxide IGZO films can be avoided further, the 6Mask technology of IGZO products can be upgraded to the 5Mask technology, the manufacturing cost of the display products can be reduced, and the resolution ratio of the display products can be increased.

Description

technical field [0001] The invention relates to an etching solution, in particular to an etching solution for copper-molybdenum and alloy films and a preparation method thereof, belonging to the technical field of etching. Background technique [0002] At present, in the production process of TFT arrays, in order to meet the requirements of large size, high resolution and driving frequency of liquid crystal display products such as TVs, most of them use etching solution to etch the copper-molybdenum metal layer to generate metal with specific patterns. layer to solve the resistance / capacitance time delay problem in the TFT array substrate. [0003] In the etching process, in order to avoid the corrosion of the metal oxide semiconductor by the etching solution, an etching barrier semiconductor structure is usually used, that is, a semiconductor protective layer is added to ensure that the metal oxide semiconductor is not affected by the etching solution. However, the semicon...

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Problems solved by technology

[0003] In the etching process, in order to avoid the corrosion of the metal oxide semiconductor by the etching solution, an etching barrier semiconductor structure is usually used, that is, a semiconductor protective layer is added to ensure that the metal oxide semiconductor is not affected by the etching solution. However, the semiconductor protective layer not only increases the manufacturing cost and manufacturing cycle of display products, but also has a negative impact on the resolution of display products

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