Method for etching FTO (fluorine-doped tin oxide) conductive thin film

A conductive film and electrolyte technology, applied in electrolysis process, electrolysis components, etc., can solve the problems of low production efficiency and poor accuracy, and achieve the effect of scientific etching method, etching precision and production efficiency

Inactive Publication Date: 2013-12-04
DALIAN HEPTACHROMA SOLAR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to propose a method for etching an FTO conductive film to achieve high etching production efficiency and high etching precision for the problems of low production efficiency and poor accuracy of the existing FTO conductive film etching methods. good advantage

Method used

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  • Method for etching FTO (fluorine-doped tin oxide) conductive thin film
  • Method for etching FTO (fluorine-doped tin oxide) conductive thin film
  • Method for etching FTO (fluorine-doped tin oxide) conductive thin film

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Embodiment 1

[0026] This embodiment discloses a method for etching a conductive film, such as Figure 1-3 Shown, specifically a kind of etching method of FTO conductive film, comprises the following steps:

[0027] Step 1: According to the prefabricated pattern, print a layer of acid-resistant ink 3 on one side of the cleaned FTO conductive film 2 (in this embodiment, choose to deposit the FTO conductive film 2 on the glass substrate 1), which is the insulating etchant, and forms Working electrode - cathode 4;

[0028] Step 2: Place the cathode 4 and the anode 5 (graphite electrode) together in a hydrochloric acid solution 8 with a mass fraction of 8%, such as figure 1 and figure 2 shown;

[0029] Step 3: Apply a DC voltage of 2V between the cathode 4 and the anode 5 for 30 minutes;

[0030] Step 4: After step 3, the FTO conductive film 2 placed in the hydrochloric acid solution 8 and not covered by the insulating ink 3 is etched and removed, as image 3 shown;

[0031] Step 5: Take...

Embodiment 2

[0033] This embodiment discloses an etching method for a conductive thin film, specifically an etching method for an FTO conductive thin film, comprising the following steps:

[0034] Step 1: According to the prefabricated pattern, print a layer of acid-resistant ink on the side of the cleaned FTO conductive film (in this embodiment, choose to deposit the FTO conductive film on the PET flexible substrate), that is, to form the working electrode-cathode;

[0035] Step 2: Place the cathode and the anode (platinum electrode) together in a hydrochloric acid solution with a mass fraction of 5%;

[0036] Step 3: Apply a DC voltage of 4V between the cathode and the anode for 40 minutes;

[0037] Step 4: After step 3, the FTO conductive film placed in the hydrochloric acid solution and not covered by the insulating ink is etched and removed;

[0038] Step 5: Take the cathode out of the hydrochloric acid solution, wash it with water, put it in 1% sodium hydroxide solution to remove th...

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Abstract

The invention provides a method for etching an FTO (fluorine-doped tin oxide) conductive thin film. The method includes steps of depositing the FTO conductive thin film on a substrate, covering an insulating etching-resistant layer on one side of the FTO conductive thin film according to preset patterns and further acquiring a cathode; placing the cathode and an inert anode into acid electrolyte, applying a constant voltage between the cathode and the anode, and etching and removing parts, which are not covered by the insulating etching-resistant layer, of the FTO conductive thin film. The method for etching the FTO conductive thin film has the advantages that the method is scientific and reasonable, various shortcomings in the prior art are overcome, and the etching production efficiency and the etching precision are high.

Description

technical field [0001] The invention relates to an etching technology of a conductive thin film, in particular to an etching method of an FTO conductive thin film. Background technique [0002] Conductive thin film glass not only has good conductivity, but also has high transparency like glass. Therefore, conductive thin film glass is widely used as a functional material for electrode materials in display devices (such as: touch screen electrodes, field-induced Electrodes of light-emitting devices, transparent electrodes in liquid crystal display devices and electrodes in electrochromic display devices, etc.), thin-film solar cells, heat reflective films, automotive glass and rearview mirrors, anti-static and anti-electromagnetic shielding layers, etc. Conductive film glass is widely used in tin-doped indium oxide (ITO) conductive film glass, fluorine-doped tin oxide (FTO) conductive film glass, aluminum-doped zinc oxide (AZO) conductive film glass and boron-doped zinc oxide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25F3/14C25F7/00
Inventor 杨希川
Owner DALIAN HEPTACHROMA SOLAR TECH CO LTD
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