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Method for obtaining high-density unequal height crystal microneedle array

A microneedle array, high-density technology, applied in the direction of microneedles, instruments introduced into the body, needles, etc., can solve the problems of cumbersome process and too many steps, and achieve the effect of high etching precision, accurate shape and avoiding errors

Active Publication Date: 2018-07-27
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For quartz etching, DRIE technology is not required like silicon wafer etching, and the process is cumbersome and has too many steps

Method used

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  • Method for obtaining high-density unequal height crystal microneedle array
  • Method for obtaining high-density unequal height crystal microneedle array
  • Method for obtaining high-density unequal height crystal microneedle array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] 1) Obtain the full space rate distribution of quartz etching:

[0047] Such as Figure 5 with Image 6 As shown, a three-coordinate measuring machine is used to measure the data points on the surface of the quartz ball before and after the etching to obtain the anisotropic rate of quartz wet etching in different directions, thereby obtaining the full space rate of the quartz anisotropic etching.

[0048] 2) Establish the etching model of the needle-shaped boss:

[0049] The etching model of the needle-shaped boss is divided into two parts: the first part is the mask drilling model, and the second part is the free etching model after the mask comes off.

[0050] Such as image 3 As shown, a needle-like boss is observed separately. For the needle-like structure in the figure, when viewed from one side, there are four main faces: A, B, C, and D. Since the Z-cut quartz wafer has a three-symmetric structure, these surfaces will inevitably be repeated during the process of rotating t...

Embodiment 2

[0086] Such as figure 1 with Figure 17 As shown, the microneedle array is composed of multiple linear arrays with linear and equidistant tops arranged in parallel. Figure 16 A schematic diagram of the etching of a cluster of linear arrays with linear and equidistant tops is given. When the mask shape is circular, step 3) the mask radius R in Step5 i Calculated as follows:

[0087]

[0088] Where i is the i-th needle boss from high to low in the same cluster of linear arrays, θ is the angle between the diagonal line and the horizontal line formed by the top of the linear array, n is the number of needle bosses in a linear array, k s Is the fastest rate of mask erosion, k h Is the rate of change of boss height during free etching, R 1 Is the radius of the initial needle-shaped boss covering the mask, and D is the distance between the axis of two adjacent needle-shaped bosses in the same cluster array.

[0089] Considering its limit, when the needle column disappears, only the base is...

Embodiment 3

[0099] Such as figure 2 with Figure 18 As shown, the microneedle array is composed of a plurality of curved arrays with symmetrical parabolic tops and equidistantly arranged in parallel, and the top parabolic translation surface, Figure 14 The etching schematic diagram of the half parabolic arrangement is given. When the mask shape is circular, step 3) Mask radius R i Calculated as follows:

[0100]

[0101] Where i represents the i-th needle boss from high to low in the same cluster of linear array, n is the number of needle bosses in the same cluster of array, k s Is the fastest rate of mask erosion, k h Is the rate of change of boss height during free etching, R 1 Is the radius of the initial needle boss covering the mask, D is the distance between the axis of two adjacent needle bosses in the same cluster array, and ɑ is the quadratic coefficient of the quadratic function corresponding to the parabola. Mirror the mask size to obtain a symmetrical parabolic and equidistant ar...

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Abstract

The invention discloses a method for obtaining a high-density curved surface or a beveled microneedle array. According to the method, the beveled or curved surface microneedle array is generated by changing the shapes and sizes of masks to generate needle-shaped quartz bosses with different heights. The shapes of the masks in the method can be circles or triangles, and different calculation modesare provided for different mask shapes and different mask sizes. By adoption of the method, the high-density microneedle array can be obtained, and the shape of the array can be accurately controlled.

Description

Technical field [0001] The invention relates to a method for forming a crystal microneedle array. Background technique [0002] Utilizing the characteristics of anisotropic corrosion to obtain high-density, the array of needle-shaped bosses arranged in a bevel or curved surface has been used in the etching of silicon. For bulk silicon wafers with different crystal orientations, since the edge of the silicon mask is etched faster, the direct application of silicon anisotropic etching cannot form a needle-like etching structure. In order to obtain the needle-shaped array structure of the bulk silicon wafer with needle points, usually one step etching cannot be done, and it needs to be carried out step by step. [0003] Using DRIE technology and the principle of deep reactive ion etching, a columnar array of silicon crystals can be obtained. By passivating and protecting the part to be retained, and taking advantage of the anisotropic corrosion characteristics of silicon, wet etchin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C1/00388B81C1/00523B81C1/00555A61M2037/0053B81C1/00103B81C1/00111B81C2201/0133
Inventor 幸研张云泽张晋张辉仇晓黎史章昆李征蔚郝金祎
Owner SOUTHEAST UNIV
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