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56results about How to "Controllable thickness" patented technology

Multiple layer hydrogen infiltration -resistant compound film preparation method

The invention relates to a method for preparing a multi-layer hydrogen-permeation-resisting composite membrane, and belongs to the material technology field. The method adopts a coupling technique of aluminum and aluminum alloy coating and micro-arc oxidation to form the multi-layer hydrogen-permeation-resistance composite membrane at the home position on a stainless steel basal body, the composite membrane comprises an alloy layer formed by the basal body and coating metal, a coating metal layer, a composite layer formed by the coating metal and oxide ceramic and an oxide ceramic layer, etc., as shown in picture 1. Compared with the prior art, the method has the advantages of the aluminum and aluminum alloy coating and the micro-arc oxidation, overcomes the defect of the prior single technique, and forms the multi-layer hydrogen-permeation-resistance composite membrane with high capability; the ceramic layer thereof has controllable thickness, high compactness, good quality, and firm combination with the basal body, thereby enhancing the hydrogen-permeation-resisting and the corrosion-resisting properties of the stainless steel, improving the hot oxidation resistance and the abrasion resistance of the stainless steel, prolonging service life of the stainless steel container, and strengthening safety precautions.
Owner:SICHUAN UNIV

Porous silicon rubber thin film containing graphene as well as preparation method and application thereof

The invention discloses a porous silicon rubber thin film containing graphene as well as a preparation method and application thereof. The preparation method comprises the following steps: mixing a silicon rubber precursor, a non-solvent or pore-forming agent, a volatile solvent and the graphene according to a certain ratio; carrying out ultrasonic treatment or stirring a mixed solution to obtain a film forming solution; de-foaming the film forming solution to form a film on a template; removing a solvent in a liquid blank film and curing and molding; removing the non-solvent or the pore-forming agent. The porous silicon rubber thin film containing the graphene, which is prepared by the preparation method, can be used as artificial skin or surgical dressing for covering skin defect wounds of mammals. According to the porous silicon rubber thin film containing the graphene as well as the preparation method and the application thereof, phase-separation film forming is induced by utilizing solvent volatilization and pores are formed by adopting a non-solvent or pore-forming agent filtering-out method; a preparation technology is simple and the pore diameter and the thickness of the thin film are controllable; the porous silicon rubber thin film containing the graphene has an ordered porous structure; meanwhile, the graphene has excellent antibacterial activity and can be used for preventing the wounds from being infected by bacteria and promoting the healing of the wounds when the porous silicon rubber thin film is used for the artificial skin.
Owner:SICHUAN UNIV

Double-shell-structure carbonyl iron powder composite wave-absorbing material and preparation method thereof

The invention discloses a double-shell-structure carbonyl iron powder composite wave-absorbing material and a preparation method thereof, wherein the composite wave-absorbing material is of a double shell layer core-shell structure, the core is carbonyl iron powder, the inner layer of the double-shell layer is an insulating layer, and the outer layer of the double-shell layer is a magnetic layer;the thickness of the insulating layer is 1 nm-1 [mu] m; and the thickness of the magnetic layer is 1nm-5 [mu] m; the preparation method comprises the following steps: coating the surface of the carbonyl iron powder with the insulating layer and coating the surface of a core-shell structure precursor by a chemical coprecipitation method. The surface of the carbonyl iron powder is coated with the double-shell layer by the chemical coprecipitation method. The impedance matching characteristic of the material is greatly improved, meanwhile, a large amount of nano-interface heterojunction is formedat the interfaces of the inner core and the double-shell layer, so that interface polarization is effectively induced, the scattering effect is formed for electron migration, and electromagnetic waveloss mechanisms such as multi-reflection absorption, strong ] ferromagnetic resonance and eddy current loss and the like of the material are greatly improved, so that the wave absorbing performance of the material is remarkably improved; the composite wave-absorbing material is simple in preparation method, is uniform and compact in coating and controllable in coating layer thickness and particlesize.
Owner:CENT SOUTH UNIV

Coating method of lithium manganite cathode material for lithium battery

The invention relates to a coating method of a lithium manganite cathode material for a lithium battery. The coating method comprises the steps as follows: a MnSO4 aqueous solution and a sodium carbonate aqueous solution are prepared, and a complexing agent ammonium hydroxide is added to the sodium carbonate aqueous solution; then a peristaltic pump is utilized to continuously input the mixed aqueous solution into a reaction flask; after reaction is finished, precipitation is separated centrifugally, washed repeatedly by distilled water to remove residual ions and dried; then the precipitation and Li2CO3 or LiOH are mixed and ground uniformly for calcination in a muffle furnace step by step, a calcined product is dispersed in a graphite oxide solution and subjected to ultrasonic dispersion, centrifugation and drying; and the calcined product is placed in a vacuum tube furnace and calcined in protective atmosphere at the temperature of 400 DEGC-700 DEG C. According to the coating method of the lithium manganite cathode material for the lithium battery, direct contact between the cathode material and an electrolyte solution can be effectively reduced, dissolution of Mn ions is reduced, meanwhile, the conductivity of lithium manganite is further improved, the electrical loss is reduced, and specific capacity and rate capability of the lithium manganite cathode material are greatly improved.
Owner:QINGDAO QIANYUN HIGH TECH NEW MATERIAL

Implantable microneedle tip electrode and manufacturing method thereof

The invention discloses an embedded micro-pinpoint electrode and a manufacturing method thereof, which relates to the technical field of micro-electronic mechanical systems and embedded micro-electrodes. The method comprises the following steps: A: manufacturing a metal electrode layer of a parylene-metal alloy-parylene structure on a silicon piece (2) coated with an aluminum film (1), wherein the metal electrode layer comprises an exciting point (3), an interconnection line (4) and a lead connecting line (5); B: manufacturing a nickel metal or nickel alloy mechanical supporting layer by photoetching and plating, wherein the mechanical supporting layer comprises a nickel metal or nickel alloy micro pinpoint (6) and a base supporting body of the lead connecting point (7); C: eroding an aluminum film victimization layer by a wetting method; bonding a dry film (8) on a front surface; etching an oxygen plasma on a back surface until an exciting point and a lead connecting point are exposed; and D: eroding the dry file by the wetting method and cleaning by using deionized water to obtain the micro-pinpoint electrode. The invention has the characteristics of high mechanical performance,good biological compatibility, convenient embedding, light damage to tissue, accurate and controllable size, high sensibility and high reliability.
Owner:析芒(宁波)生物微系统有限公司

Graphene-based hot-electron transistor based on ALD (atomic layer deposition) and preparation method of graphene-based hot-electron transistor

The invention provides a graphene-based hot-electron transistor based on ALD (atomic layer deposition) and a preparation method of the graphene-based hot-electron transistor. The preparation method comprises the following steps: (1) providing heavy doping N-type Si and growing emitter region electrodes at both sides of the surface of the Si; (2) carrying out thermal oxidation on the surface of the heavy doping N-type Si to form a first potential barrier; (3) forming a single graphitic layer on the surface of the first potential barrier as a base region and forming base region electrodes at both sides of the surface of the single graphitic layer; and (4) forming a second potential barrier between the base region electrodes on the surface of single-layer graphene by utilizing an ALD process and forming a metal collector region on the surface of the second potential barrier. By adopting the preparation method, the performance of a hot-electron device is relatively good by preparing the single graphene layer as the base region, utilizing the performance of quasi ballistic transport of the graphene and combining tunneling characters of hot-electron, and the potential barrier of high-k metallic oxide grown on the surface of the single-layer graphene by utilizing the ALD is controllable in thickness, free of pinhole and good in quality. In addition, the preparation method provided by the invention is accurate in preparation, simple and high in yield.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Hole metallizing method for circuit board with high ratio of thickness to radial dimension

The invention provides a hole metallizing method for a circuit board with a high ratio of thickness to radial dimension, and solves problems that there is no tin layer for protecting the hole bottom after etching, there is no copper in the hole and thereby the circuit board is caused to be discarded because a metalized back drill hole with the high ratio of thickness to radial dimension is relatively deep and a tin layer is difficult to set at the bottom of the hole in a coating manner after pattern electroplating. Therefore, the invention proposes the method for improving the no-copper condition of a metalized back drill hole of the circuit board with the high ratio of thickness to radial dimension. The invention can effectively control the thickness of hole wall copper, and the thickness can be controlled. The method can avoid the material waste caused by the normally-used thick copper technology in the prior art, can enable the surface copper layer of the hole wall to be uniform in thickness, enables the surface to be flat, and can meet the requirements of the performances of a precise circuit element circuit board. The method is simple, is advanced in technology, improves the electroplating current density, shortens the electroplating time, improves the deep electroplating capability, and effectively reduces the pollution caused by electroplating.
Owner:奥士康精密电路(惠州)有限公司

Electrostatic coating device of locomotive-mounted wheel rail friction control material

The invention discloses an electrostatic coating device of a locomotive-mounted wheel rail friction control material. The electrostatic coating device comprises a high-voltage electrostatic generator, a high-voltage electrode and a powder pump; the powder pump is provided with a secondary wind pressure pipe and a primary wind pressure pipe; a feed port of the powder pump is connected with a supply electromagnetic valve; the supply electromagnetic valve is connected with a storage tank; a discharge port of the powder pump is connected with a powder-air mixing pipe; the powder-air mixing pipe is connected with a nozzle; and the high-voltage electrode is arranged in the nozzle, and is connected with the high-voltage electrostatic generator. The electrostatic coating device has the following advantages: the electrostatic coating device saves such links as heating, stirring and insulation transportation in a solid-liquid-solid coating mode, so that the caused defects are prevented, the device is compact in structure, small in size and more convenient for installation, largely increases the material utilization rate, realizes controllability of coating thickness and density, and can adjust the coating thickness and density through a mode of adjusting primary and secondary wind pressure and voltage of the electrostatic generator according to specific conditions of different curves; and a coating method is more scientific and precise, and greatly improves the coating effect.
Owner:张峰

Wet chemical etching method for preparing large-area and flexible ultra-thin monocrystalline silicon wafers

The invention discloses a wet chemical etching method for preparing large-area and flexible ultra-thin monocrystalline silicon wafers, and belongs to the field of semiconductor technology. According to the method, acetone, anhydrous ethanol, deionized water and hydrofluoric acid are adopted to treat a N(100) double-side-polished monocrystalline silicon wafer in advance, so that the surface of the silicon surface is cleaned. Potassium hydroxide, isopropanol and deionized water are uniformly mixed to prepare a reducer and the reducer is preheated in a water-bath. After that, the silicon wafer is well fixed and dipped in the reducer by a clamp. In this way, an ultra-thin wafer of a desired thickness can be obtained through controlling the reaction time and the reaction temperature, The surface of the silicon wafer is bright, flat, smooth and free of any obvious thinning defect, and appears the mirror-surface result. According to the technical scheme of the invention, the thinning process of silicon wafers is simplified by adopting the single-step method, and the characteristics of the wet etching technique in the low-temperature and normal-pressure condition are maintained. Silicon wafers with the thickness thereof smaller than 10 mm are obtained for the first time. Meanwhile, the application range of the wet silicon etching technique is expanded. Therefore, the method provides a novel idea and a novel technical means for the thinning process of silicon wafers.
Owner:NORTH CHINA ELECTRIC POWER UNIV (BAODING)

Gel diaphragm for new rare-earth power supply and preparation method thereof

The present invention belongs to the field of polymer composites and functional materials, and relates to a gel diaphragm for a new rare-earth power supply and a preparation method thereof. After an Asolution and a B solution are mixed, a mixture is placed into a bucket for vacuum gel forming. Then, gel is cut into sheets and is heat-sealed with a diaphragm to obtain the gel diaphragm for a new rare-earth power supply, wherein the A solution is obtained by mixing magnesium lithium silicate, CMC and H2O, and the B solution is obtained by mixing a polymer and water. The gel diaphragm of the present invention is prepared under the combination of inorganic thixotropic gel and organic gel, is controllable in thickness and resistant to carbonization, and has high mechanical strength. The problem that a gel diaphragm with high mechanical strength cannot be prepared under conventional process treatment in the prior art is solved. The gel diaphragm of the present invention has the features ofhigh conductivity and low interfacial energy of a liquid electrolyte, and also has the advantage of good long-range stability of a solid electrolyte. The present invention also provides a preparationmethod of the gel diaphragm. The preparation method can realize industrialization and has good reproducibility. A production process of the preparation method is non-toxic, pollution-free and environmentally friendly.
Owner:包头昊明稀土新电源科技有限公司

Preparation method of positive electrode material of lithium ion battery and product thereof

The invention discloses a preparation method of a positive electrode material of a lithium ion battery and a product thereof, belonging to the technical field of electrochemical batteries. The method comprises the following steps: mixing a manganese-based positive electrode material of the lithium ion battery and a modification body, performing granulating, and conducting sintering to obtain the positive electrode material of the lithium ion battery. According to the invention, a high-electron conductor or a high-ion conductor is used as a modifier for uniformly modifying the surface of the positive electrode material by adopting a solid-phase fusion technology, and the thickness of a modification layer can be controlled by adjusting a mass ratio of the manganese-based positive electrode material of the lithium ion battery to the modification body; the surface of the modified positive electrode material of the lithium ion battery is more stable, dissolution of transition metal ions and generation of cracks between particles in the circulation process are slowed down, and the specific capacity and the circulation stability of the positive electrode material of the lithium ion battery are effectively improved; and the preparation method disclosed by the invention is friendly to environment, free of pollution and low in process cost.
Owner:HENAN NORMAL UNIV
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