Method for preparing surface plasma resonance chip

A surface plasma and chip technology, applied in ion implantation plating, metal material coating process, coating, etc., to achieve the effect of uniform thickness, smooth surface and controllable thickness

Active Publication Date: 2011-04-06
JIANGXI INST OF RARE EARTHS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Dong Shaojun's group used the method of anode electrolysis to process the gold film with a thickness greater than 50nm to 50nm. This method is to electrolyze part of the gold film into

Method used

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  • Method for preparing surface plasma resonance chip
  • Method for preparing surface plasma resonance chip
  • Method for preparing surface plasma resonance chip

Examples

Experimental program
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Example Embodiment

[0028] The invention discloses a method for preparing a surface plasmon resonance chip, including:

[0029] Step a) Put the glass substrate into the growth chamber of the vacuum sputtering apparatus;

[0030] Step b) Pour argon gas into the growth chamber and vacuumize to 10 -1 ~10 -3 mbr, using chromium as a target with a target base distance of 5-9 cm, and sputtering a chromium film on the glass substrate;

[0031] Step c) Pour argon gas into the growth chamber and vacuumize to 10 -1 ~10 -3 mbr, using gold as a target with a target base distance of 5-9 cm, and sputtering a gold film on the product obtained in step b).

[0032] According to the present invention, it preferably includes pretreatment of the glass substrate, preferably specifically:

[0033] Put the glass substrate in a volume ratio of 0.8~1.2:2.5~3.5 30wt% H 2 O 2 With 98wt% H 2 SO 4 The mixed solution is heated, then rinsed with water, dried by a nitrogen stream, the H 2 O 2 With H 2 SO 4 The volume ratio of is more pre...

Example Embodiment

[0043] Example 1

[0044] Pretreatment of glass substrate:

[0045] Put a glass substrate with a size of 20×20mm in a volume ratio of 1:3 30wt% H 2 O 2 With 98wt% H 2 SO 4 Boil the mixed solution for 30 minutes, then rinse with water and blow dry with nitrogen flow;

[0046] Chrome film:

[0047] Adjust the target base distance of the SCD 050 vacuum sputtering system produced by Germany BALZERS to 5cm, and put the glass substrate dried by the nitrogen stream into the growth chamber of the vacuum sputtering system;

[0048] Rotate the tee connected to SCD 050 to the closed state, turn on the water cooling system, and indicate the temperature is 12 ~ 6 ℃; open the argon cylinder, rotate the tee of the gas supply system to communicate with SCD 050, and provide argon to the system;

[0049] Install the chromium target, turn the "shutter" of the vacuum sputtering system to the closed state, and the "shutter" is separated between the chromium target and the glass substrate;

[0050] Turn on the...

Example Embodiment

[0065] Example 2

[0066] Pretreatment of glass substrate:

[0067] Put a glass substrate with a size of 20×20mm in a volume ratio of 1:3 30wt% H 2 O 2 With 98wt% H 2 SO 4 Boil the mixed solution for 30 minutes, then rinse with water and blow dry with nitrogen flow;

[0068] Chrome film:

[0069] Adjust the target base distance of the SCD 050 vacuum sputtering system produced by German BALZERS to 6 cm, and put the glass substrate dried by the nitrogen stream into the growth chamber of the vacuum sputtering system;

[0070] Rotate the three-way connected with SCD 050 to the closed state, turn on the water cooling system, and indicate the temperature is 12-16 ℃; open the argon cylinder, rotate the three-way of the gas supply system to communicate with SCD 050, and provide argon to the system;

[0071] Install the chromium target, turn the "shutter" of the vacuum sputtering system to the closed state, and the "shutter" is separated between the chromium target and the glass substrate;

[0072...

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Abstract

The embodiment of the invention discloses a method for preparing a surface plasma resonance chip. The method comprises the following steps of: a) placing a glass substrate in a growth chamber of a vacuum sputtering instrument; b) introducing argon gas into the growth chamber, vacuuming until the vacuum degree is 10<-1> to 10<-3>mbr and sputtering a chromium thin film on the glass substrate at a substrate-to-target distance of 5 to 9cm by taking chromium as a target material; and c) sputtering a metal thin film on a product obtained in the step b) at the substrate-to-target distance of 5 to 9cm under the condition of vacuum degree of between 10<-1> and 10<-3>mbr by taking metal as the target material. By using a vacuum sputtering principle and the substrate-to-target distance of 5 to 9cm, the prepared metal thin film has a flat surface and controllable thickness and can be used for the surface plasma resonance chip. Experiment results show that the prepared metal thin film has uniform thickness which is about 50nm.

Description

technical field [0001] The invention relates to the technical field of surface plasmon resonance sensing, more specifically, to a preparation method of a surface plasmon resonance chip. Background technique [0002] Surface plasmon resonance technology is a simple and direct sensing technique to study the properties of matter by measuring changes in the refractive index near the surface of a surface plasmon resonance chip. The surface plasmon resonance (SPR) method can monitor the progress of the binding or dissociation reaction between molecules on the chip surface in real time, and then obtain information about the molecular structure change and chemical bonding on the chip surface, thereby calculating the kinetic constant of the reaction and determining the surface reaction of the chip. type, concentration and quality of the substance. The detection principle of surface plasmon resonance is: a beam of P polarized light is incident on the interface between the prism and t...

Claims

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Application Information

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IPC IPC(8): C23C14/18C23C14/34
Inventor 牛利王伟包宇李敏
Owner JIANGXI INST OF RARE EARTHS CHINESE ACAD OF SCI
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