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Method for preparing surface plasma resonance chip

A surface plasma and chip technology, applied in ion implantation plating, metal material coating process, coating, etc., to achieve the effect of uniform thickness, smooth surface and controllable thickness

Active Publication Date: 2011-04-06
JIANGXI INST OF RARE EARTHS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Dong Shaojun's group used the method of anode electrolysis to process the gold film with a thickness greater than 50nm to 50nm. This method is to electrolyze part of the gold film into the electrolyte solution containing chloride ions. Therefore, it is only suitable for the treatment of gold films with a thickness greater than 50nm. Metal film not directly prepared

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  • Method for preparing surface plasma resonance chip
  • Method for preparing surface plasma resonance chip
  • Method for preparing surface plasma resonance chip

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preparation example Construction

[0028] The invention discloses a method for preparing a surface plasmon resonance chip, comprising:

[0029] Step a) putting the glass substrate into the growth chamber of the vacuum sputtering apparatus;

[0030] Step b) feed argon gas into the growth chamber, and evacuate to 10 -1 ~10 -3 mbr, using chromium as the target material, the distance between the target and the base is 5-9 cm, sputtering a chromium thin film on the glass substrate;

[0031] Step c) Introduce argon gas into the growth chamber, and evacuate to 10 -1 ~10 -3 mbr, gold is used as the target material, and the distance between the target and the base is 5-9 cm, and a gold thin film is sputtered on the product obtained in the step b).

[0032] According to the present invention, it preferably includes pretreating the glass substrate, preferably specifically:

[0033] The glass substrate is mixed with 30wt% H at a volume ratio of 0.8-1.2:2.5-3.5 2 o 2 with 98wt% H 2 SO 4 heated in the mixed solution...

Embodiment 1

[0044] Pretreatment of glass substrates:

[0045] A glass substrate with a size of 20×20mm was mixed with 30wt% H at a volume ratio of 1:3. 2 o 2 with 98wt% H 2 SO 4 Boil for 30min in the mixed solution, then rinse with water, and blow dry with nitrogen flow;

[0046] Chrome coating:

[0047] Adjust the target base distance of the SCD 050 vacuum sputtering system produced by BALZERS in Germany to be 5cm, and put the glass substrate dried by the nitrogen flow into the growth chamber of the vacuum sputtering system;

[0048] Turn the tee connected to the SCD 050 to the closed state, turn on the water cooling system, and indicate that the temperature is 12-6°C; open the argon gas bottle, and turn the tee of the gas supply system to communicate with the SCD 050 to provide argon to the system;

[0049] Install the chrome target, turn the "shield" of the vacuum sputtering system to the closed state, and the "shield" is separated between the chromium target and the glass substra...

Embodiment 2

[0066] Pretreatment of glass substrates:

[0067] A glass substrate with a size of 20×20mm was mixed with 30wt% H at a volume ratio of 1:3. 2 o 2 with 98wt% H 2 SO 4 Boil for 30min in the mixed solution, then rinse with water, and blow dry with nitrogen flow;

[0068] Chrome coating:

[0069] Adjust the target base distance of the SCD 050 vacuum sputtering system produced by BALZERS in Germany to be 6cm, and put the glass substrate dried by the nitrogen flow into the growth chamber of the vacuum sputtering system;

[0070] Turn the tee connected to the SCD 050 to the closed state, turn on the water cooling system, and indicate that the temperature is 12-16°C; open the argon gas bottle, and turn the tee of the gas supply system to communicate with the SCD 050 to provide argon to the system;

[0071] Install the chrome target, turn the "shield" of the vacuum sputtering system to the closed state, and the "shield" is separated between the chromium target and the glass substr...

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Abstract

The embodiment of the invention discloses a method for preparing a surface plasma resonance chip. The method comprises the following steps of: a) placing a glass substrate in a growth chamber of a vacuum sputtering instrument; b) introducing argon gas into the growth chamber, vacuuming until the vacuum degree is 10<-1> to 10<-3>mbr and sputtering a chromium thin film on the glass substrate at a substrate-to-target distance of 5 to 9cm by taking chromium as a target material; and c) sputtering a metal thin film on a product obtained in the step b) at the substrate-to-target distance of 5 to 9cm under the condition of vacuum degree of between 10<-1> and 10<-3>mbr by taking metal as the target material. By using a vacuum sputtering principle and the substrate-to-target distance of 5 to 9cm, the prepared metal thin film has a flat surface and controllable thickness and can be used for the surface plasma resonance chip. Experiment results show that the prepared metal thin film has uniform thickness which is about 50nm.

Description

technical field [0001] The invention relates to the technical field of surface plasmon resonance sensing, more specifically, to a preparation method of a surface plasmon resonance chip. Background technique [0002] Surface plasmon resonance technology is a simple and direct sensing technique to study the properties of matter by measuring changes in the refractive index near the surface of a surface plasmon resonance chip. The surface plasmon resonance (SPR) method can monitor the progress of the binding or dissociation reaction between molecules on the chip surface in real time, and then obtain information about the molecular structure change and chemical bonding on the chip surface, thereby calculating the kinetic constant of the reaction and determining the surface reaction of the chip. type, concentration and quality of the substance. The detection principle of surface plasmon resonance is: a beam of P polarized light is incident on the interface between the prism and t...

Claims

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Application Information

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IPC IPC(8): C23C14/18C23C14/34
Inventor 牛利王伟包宇李敏
Owner JIANGXI INST OF RARE EARTHS CHINESE ACAD OF SCI
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