Method for preparing surface plasma resonance chip
A surface plasma and chip technology, applied in ion implantation plating, metal material coating process, coating, etc., to achieve the effect of uniform thickness, smooth surface and controllable thickness
Active Publication Date: 2011-04-06
JIANGXI INST OF RARE EARTHS CHINESE ACAD OF SCI
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The embodiment of the invention discloses a method for preparing a surface plasma resonance chip. The method comprises the following steps of: a) placing a glass substrate in a growth chamber of a vacuum sputtering instrument; b) introducing argon gas into the growth chamber, vacuuming until the vacuum degree is 10<-1> to 10<-3>mbr and sputtering a chromium thin film on the glass substrate at a substrate-to-target distance of 5 to 9cm by taking chromium as a target material; and c) sputtering a metal thin film on a product obtained in the step b) at the substrate-to-target distance of 5 to 9cm under the condition of vacuum degree of between 10<-1> and 10<-3>mbr by taking metal as the target material. By using a vacuum sputtering principle and the substrate-to-target distance of 5 to 9cm, the prepared metal thin film has a flat surface and controllable thickness and can be used for the surface plasma resonance chip. Experiment results show that the prepared metal thin film has uniform thickness which is about 50nm.
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Property | Measurement | Unit |
Thickness | 40.0 ~ 60.0 | nm |
tensile | MPa | |
Particle size | Pa | |
strength | 10 |
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