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Photoresist composition and preparation method and composition method thereof

A technology of photoresist and composition, which is applied in the field of photolithography, can solve the problems of photoresist peeling and low adhesion of photoresist, and achieve the effect of improving etching precision

Active Publication Date: 2016-07-27
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is only applicable to the case where the photoresist layer is an insulating material layer. For the metal film layer, the adhesion of the photoresist added with hexamethyldisilamine is still small, and the photoresist will still appear during etching. Peeling phenomenon

Method used

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  • Photoresist composition and preparation method and composition method thereof
  • Photoresist composition and preparation method and composition method thereof
  • Photoresist composition and preparation method and composition method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0077] As a preferred embodiment of the present invention, the first photosensitive resin includes a naphthoquinone-based diazo type photosensitive resin, and the number average molecular weight of the first photosensitive resin is 400-2000. The polymer molecule of the naphthoquinone diazo photosensitive resin contains an ortho-diazonaphthoquinone structure, and the solubility changes from oil-soluble to alkali water-soluble after absorbing light energy.

[0078] As a preferred embodiment of the present invention, the naphthoquinone-based diazo photosensitive resin is esterified with polyhydroxybenzophenone and 2,1-diazonaphthoquinone-5-sulfonyl chloride and / or 2,1- The photosensitive compound is obtained by esterification of naphthoquinone diazonium-4-sulfonyl chloride. Specifically, the general structural formula of the naphthoquinone-based diazo photosensitive resin is:

[0079]

[0080] where R 1 is 2,1-diazonaphthoquinone-5-sulfonyl ester group, R 2 is 2,1-diazonaph...

preparation example

[0164] The second photosensitive resin prepared by the synthesis of formaldehyde N-ethyl 2-nitrodiphenylamine 4-diazo (ENDDS) resin specifically includes the following steps:

[0165] S1, 300g (1.49mol) 2,4-dinitrochlorobenzene was added to 1485mL absolute ethanol, heated to dissolve, and then 173g (1.63mol) anhydrous Na was added 2 CO 3 . Heating to reflux, dripping N-ethylaniline 196.9g (1.63mol), dropping the reaction for 6h, cooling overnight to obtain a large amount of dark red prismatic single crystal A, yield 299g, yield 70%;

[0166] S2, 180g (0.63mol) A was dissolved in 1000mL 95% ethanol, 66.5g (0.63mol) anhydrous Na2CO3 was added, heated to reflux, and 301g (1.25mol) Na was slowly added dropwise 2 S·9H 2 A solution of O dissolved in 500 mL of water was dropped for about 2 hours, then refluxed for 4 hours, and cooled. Pour the reaction mixture into 2000 mL of water, let it stand for a period of time, separate layers, pour the water from the upper layer, and then ...

Embodiment 1

[0173] Weigh 0.4g of Victoria pure blue, 300g of ethylene glycol monoethyl ether, 1g of the second photosensitive resin, 5g of the first photosensitive resin, 10g of polyvinyl formal maleate, and prepare the photoresist composition as follows:

[0174] S10. Dissolve Victoria pure blue in ethylene glycol monoethyl ether;

[0175] S20, successively add the second photosensitive resin, the first photosensitive resin, and polyvinyl formal maleate, and stir until completely dissolved;

[0176] S30, filtering out impurities with filter paper to obtain a photoresist composition.

[0177] Wherein, the first photosensitive resin is PAC-1.

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Abstract

The invention provides a photoresist composition, which comprises first photosensitive resin, second photosensitive resin and film-forming resin, wherein the first photosensitive resin is photosensitive to light with a first wavelength; the second photosensitive resin is photosensitive to the light with a second wavelength; the second wavelength is different from the first wavelength; the second photosensitive resin comprises diphenylamine diazonium photosensitive resin; and the mass proportion of the second photosensitive resin in the photoresist composition is smaller than that of the first photosensitive resin in the photoresist composition. The invention further provides a composition method and a preparation method of the photoresist composition. When the composition method is carried out by the photoresist composition, a photoresist is not easily stripped from a metal film layer.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular, to a photoresist composition, a preparation method of the photoresist composition, and a patterning method for photolithography using the photoresist composition. Background technique [0002] In the manufacture of microelectronic devices, a photolithographic patterning process is required, and when performing a photolithographic patterning process, a photoresist is required. [0003] The current photoresist relies on a small amount of hydrogen bonds to connect with the film layer below the photoresist, resulting in that the adhesion of the photoresist is not particularly strong. Therefore, it is easy for the photoresist to peel off during the process of developing and etching. [0004] To solve this problem, one method in the prior art is to add hexamethyldisilazane to the photoresist. This method is only applicable to the case where there is an insulating material laye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/00
CPCG03F7/0035G03F7/004
Inventor 汪建国
Owner BOE TECH GRP CO LTD
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