375results about How to "Avoid high concentrations" patented technology

An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H₂O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

In certain aspects, the present invention provides compositions and methods for increasing red blood cell and/or hemoglobin levels in vertebrates, including rodents and primates, and particularly in humans.

In certain aspects, the present invention provides compositions and methods for increasing red blood cell and/or hemoglobin levels in vertebrates, including rodents and primates, and particularly in humans.

The invention relates to substrates of semi-insulating silicon carbide used for semiconductor devices and a method for making the same. The substrates have a resistivity above 106 Ohm-cm, and preferably above 108 Ohm-cm, and most preferably above 109 Ohm-cm, and a capacitance below 5 pF/mm2 and preferably below 1 pF/mm2. The electrical properties of the substrates are controlled by a small amount of added deep level impurity, large enough in concentration to dominate the electrical behavior, but small enough to avoid structural defects. The substrates have concentrations of unintentional background impurities, including shallow donors and acceptors, purposely reduced to below 5·1016 cm−3, and preferably to below 1·1016 cm−3, and the concentration of deep level impurity is higher, and preferably at least two times higher, than the difference between the concentrations of shallow acceptors and shallow donors. The deep level impurity comprises one of selected metals from the periodic groups IB, IIB, IIIB, IVB, VB, VIB, VIIB and VIIIB. Vanadium is a preferred deep level element. In addition to controlling the resistivity and capacitance, a further advantage of the invention is an increase in electrical uniformity over the entire crystal and reduction in the density of crystal defects.

A method of manufacturing a semiconductor device includes: forming an oxide film having a predetermined film thickness on a substrate by repeating a process of forming a predetermined element-containing layer on the substrate by supplying source gas containing a predetermined element into a process vessel accommodating the substrate, and a process of changing the predetermined element-containing layer to an oxide layer by supplying oxygen-containing gas and hydrogen-containing gas into the process vessel that is set below atmospheric pressure, wherein the oxygen-containing gas is oxygen gas or ozone gas, the hydrogen-containing gas is hydrogen gas or deuterium gas, and the temperature of the substrate is in a range from 400° C. or more to 700° C. or less in the process of forming the oxide film.

A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm² current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H₂ plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm² current density and second deposition step at a 60 mA/cm² current density is used to deposit a second copper layer-that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

The semiconductor device includes a gate electrode over a substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A length of part of an outer edge of the oxide semiconductor layer from an outer edge of the source electrode to an outer edge of the drain electrode is more than three times, preferably more than five times as long as a channel length of the semiconductor device. Further, oxygen is supplied from the gate insulating layer to the oxide semiconductor layer by heat treatment. In addition, an insulating layer is formed after the oxide semiconductor layer is selectively etched.

The invention discloses a mine dust concentration and environmental parameter automatic detection and control system which comprises an upper computer and at least one downhole control unit, and the downhole control unit comprises a downhole sensor group, a downhole PLC controller and a downhole peripheral device; the downhole sensor group comprises a dust concentration sensor, a temperature and humidity sensor, a flow sensor and an infrared sensor; the downhole PLC controller is used for carrying out analysis, screening and contrast on a received data signal sent from the sensor group, then forming a control signal and further outputting to the downhole peripheral device; the downhole peripheral device comprises a spray system and an alarm device; and the upper computer and the downhole PLC controller carry out data signal transmission through a communication module, thereby being capable of carrying out on-line real-time monitoring. The system can lead dust concentration, humidity, temperature and other environmental parameters of related points of a downhole operation space to be measured by the sensor group in a real-time manner, and further adopt the corresponding control measures, such as alarm, spray dedusting, cooling and the like.

Provided is a thermally-assisted magnetic recording head in which a slider including an optical system is joined with a light source unit. The light source unit comprises: a unit substrate including a joining surface joined with the slider and a source-installation surface adjacent to the joining surface; a light source provided in the source-installation surface and emits light for thermal assist; and a photodetector section formed inside the unit substrate, a light-receiving portion of the photodetector section for receiving light emitted from a rear light-emission center being located on the source-installation surface side. The light source unit includes the photodetector section that enables constant monitoring of light output from the light source. Accordingly, feedback adjustment of the light output can be accomplished. Further, since the rear light-emission center and the light-receiving portion can be located sufficiently close to each other, the light output can be monitored with a higher efficiency.

There is provided a method of fabricating a thin-film semiconductor device, including the steps of (a) melting and recrystallizing at least a surface of a thin semiconductor film formed on a substrate, in a pressure lower than an atmospheric pressure or in inert gas atmosphere, (b) keeping the substrate in atmosphere including oxygen gas, and (c) forming an insulating film on the thin semiconductor film with the substrate being kept in a pressure lower than an atmospheric pressure or inert gas atmosphere.

A wireless communication apparatus is disclosed. A transmitting device transmits a first aggregation frame in which first transmission data frames are aggregated. A measuring device measures a number value of retransmission of each of the first transmission data frames. A storage stores a limiting value of the number value of retransmission. A determination device determines whether the number value of retransmission of each of the first transmission data frames exceeds the limiting value. A transmission buffer buffers the first transmission data frames for which it is determined that the number value of retransmission does not exceed the limiting value, and discards the first transmission data frames for which it is determined that the number value of retransmission exceeds the limiting value, of the first transmission data frames. A retransmitting device retransmits the first aggregation frame in which the first transmission data frames buffered in the transmission buffer are aggregated.

A third semiconductor layer 14 is formed on a light receiving surface 13a of a second semiconductor layer 13 so as to cover the light receiving surface 13a of the second semiconductor layer 13 at least partially in a plan view. A first semiconductor layer 10 is formed on an opposite surface of the light receiving surface 13a of the second semiconductor layer 13 so as to overlap the light receiving surface 13a and the third semiconductor layer 14 at least partially in a plan view. In the second semiconductor layer 13, the relative light receiving sensitivity to respective wavelengths of light has the highest value at a wavelength in an infrared region. Thus, even if the intensity of light of the infrared region that is emitted to an object of detection is not increased when sensing by a photodiode is performed using light of the infrared range, it is possible to achieve a photodiode that has a high S/N ratio, which is a ratio of data of received light with respect to noise, and that has high detection accuracy.

A fuel cell (1) having an electrode comprising an electrocatalyst (32) on a support, wherein the support is a mesh (30) of conductive material such as a metal, metal alloy and metal composite (e.g. titanium or titanium alloy), is disclosed, as well as a method of operating such a fuel cell by contacting a fuel and an oxidant on said electrode. The electrolyte of the fuel cell may be an ion exchange membrane.

The present invention is directed to a novel methods and compositions for the therapeutic intervention in hyperphenylalaninemia. More specifically, the specification describes methods and compositions for treating various types of phenylketonurias using compositions comprising BH4. Combination therapies of BH4 and other therapeutic regimens are contemplated.