399results about How to "Avoid high concentrations" patented technology

A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact and a semiconductor capacitor of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film having low resistivity and a low content of Cl even with excellent step coverage can be formed at a temperature of 500° C. or lower, and a semiconductor capacitor having excellent leakage current characteristics can be manufactured. Also, a deposition speed, approximately 20 A / cycle, is suitable for mass production.

A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact and a semiconductor capacitor of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film having low resistivity and a low content of Cl even with excellent step coverage can be formed at a temperature of 500° C. or lower, and a semiconductor capacitor having excellent leakage current characteristics can be manufactured. Also, a deposition speed, approximately 20 A / cycle, is suitable for mass production.

An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

This invention provides a self-emulsifying composition comprising 50 to 95% by weight in total of at least one compound selected from the group consisting of ω3 polyunsaturated fatty acids and their pharmaceutically acceptable salts and esters; and 5 to 50% by weight of an emulsifier having a hydrophilic lipophilic balance of at least 10. The composition has no or reduced ethanol content, and exhibits excellent self-emulsifying property, dispersibility in the composition, emulsion stability, and absorption property. The composition is adapted for use as a drug.

In certain aspects, the present invention provides compositions and methods for increasing red blood cell and / or hemoglobin levels in vertebrates, including rodents and primates, and particularly in humans.

In certain aspects, the present invention provides compositions and methods for increasing red blood cell and / or hemoglobin levels in vertebrates, including rodents and primates, and particularly in humans.

In certain aspects, the present invention provides compositions and methods for increasing red blood cell and / or hemoglobin levels in vertebrates, including rodents and primates, and particularly in humans.

An embodiment of a collimating downlight has front-mounted blue LED chips facing upwards, having a heat sink on the back of the LED chips exposed in ambient air. The LED chips are mounted in a collimator that sends their blue light to a remote phosphor situated near the top of the downlight can. Surrounding the remote phosphor is a downward-facing reflector that forms a beam from its stimulated emission and reflected blue light. The phosphor thickness and composition can be adjusted to give a desired color temperature.

Apparatus and method for removal of particles and VOC from an airstream, in which particles carried by the airstream are charged by a corona ionizer and then collected by an electrically enhanced filter downstream of the ionizer. A catalytic filter downstream of the electrically enhanced filter removes VOC as well as ozone generated by the ionizer.

The invention relates to substrates of semi-insulating silicon carbide used for semiconductor devices and a method for making the same. The substrates have a resistivity above 106 Ohm-cm, and preferably above 108 Ohm-cm, and most preferably above 109 Ohm-cm, and a capacitance below 5 pF / mm2 and preferably below 1 pF / mm2. The electrical properties of the substrates are controlled by a small amount of added deep level impurity, large enough in concentration to dominate the electrical behavior, but small enough to avoid structural defects. The substrates have concentrations of unintentional background impurities, including shallow donors and acceptors, purposely reduced to below 5·1016 cm−3, and preferably to below 1·1016 cm−3, and the concentration of deep level impurity is higher, and preferably at least two times higher, than the difference between the concentrations of shallow acceptors and shallow donors. The deep level impurity comprises one of selected metals from the periodic groups IB, IIB, IIIB, IVB, VB, VIB, VIIB and VIIIB. Vanadium is a preferred deep level element. In addition to controlling the resistivity and capacitance, a further advantage of the invention is an increase in electrical uniformity over the entire crystal and reduction in the density of crystal defects.

In certain aspects, the present invention provides compositions and methods for increasing red blood cell and / or hemoglobin levels in vertebrates, including rodents and primates, and particularly in humans.

A method of manufacturing a semiconductor device includes: forming an oxide film having a predetermined film thickness on a substrate by repeating a process of forming a predetermined element-containing layer on the substrate by supplying source gas containing a predetermined element into a process vessel accommodating the substrate, and a process of changing the predetermined element-containing layer to an oxide layer by supplying oxygen-containing gas and hydrogen-containing gas into the process vessel that is set below atmospheric pressure, wherein the oxygen-containing gas is oxygen gas or ozone gas, the hydrogen-containing gas is hydrogen gas or deuterium gas, and the temperature of the substrate is in a range from 400° C. or more to 700° C. or less in the process of forming the oxide film.

A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.

A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA / cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA / cm2 current density and second deposition step at a 60 mA / cm2 current density is used to deposit a second copper layer-that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y) / z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.

The semiconductor device includes a gate electrode over a substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A length of part of an outer edge of the oxide semiconductor layer from an outer edge of the source electrode to an outer edge of the drain electrode is more than three times, preferably more than five times as long as a channel length of the semiconductor device. Further, oxygen is supplied from the gate insulating layer to the oxide semiconductor layer by heat treatment. In addition, an insulating layer is formed after the oxide semiconductor layer is selectively etched.

The invention discloses a mine dust concentration and environmental parameter automatic detection and control system which comprises an upper computer and at least one downhole control unit, and the downhole control unit comprises a downhole sensor group, a downhole PLC controller and a downhole peripheral device; the downhole sensor group comprises a dust concentration sensor, a temperature and humidity sensor, a flow sensor and an infrared sensor; the downhole PLC controller is used for carrying out analysis, screening and contrast on a received data signal sent from the sensor group, then forming a control signal and further outputting to the downhole peripheral device; the downhole peripheral device comprises a spray system and an alarm device; and the upper computer and the downhole PLC controller carry out data signal transmission through a communication module, thereby being capable of carrying out on-line real-time monitoring. The system can lead dust concentration, humidity, temperature and other environmental parameters of related points of a downhole operation space to be measured by the sensor group in a real-time manner, and further adopt the corresponding control measures, such as alarm, spray dedusting, cooling and the like.

Provided is a thermally-assisted magnetic recording head in which a slider including an optical system is joined with a light source unit. The light source unit comprises: a unit substrate including a joining surface joined with the slider and a source-installation surface adjacent to the joining surface; a light source provided in the source-installation surface and emits light for thermal assist; and a photodetector section formed inside the unit substrate, a light-receiving portion of the photodetector section for receiving light emitted from a rear light-emission center being located on the source-installation surface side. The light source unit includes the photodetector section that enables constant monitoring of light output from the light source. Accordingly, feedback adjustment of the light output can be accomplished. Further, since the rear light-emission center and the light-receiving portion can be located sufficiently close to each other, the light output can be monitored with a higher efficiency.

There is provided a method of fabricating a thin-film semiconductor device, including the steps of (a) melting and recrystallizing at least a surface of a thin semiconductor film formed on a substrate, in a pressure lower than an atmospheric pressure or in inert gas atmosphere, (b) keeping the substrate in atmosphere including oxygen gas, and (c) forming an insulating film on the thin semiconductor film with the substrate being kept in a pressure lower than an atmospheric pressure or inert gas atmosphere.

The present invention pertains to the prevention, treatment and diagnosis of neurodegenerative diseases, in particular Alzheimer's disease, and other similar disease. More specifically to high affinity antibodies selective for amyloid beta protein (Aβ) in its protofibril conformation and of IgG class and IgG1 or IgG4 subclass or combinations thereof or mutations thereof, retaining high Fc receptor binding and low C1(C1q) binding, effective in clearance of Aβ protofibrils and with reduce risk of inflammation.

A wireless communication apparatus is disclosed. A transmitting device transmits a first aggregation frame in which first transmission data frames are aggregated. A measuring device measures a number value of retransmission of each of the first transmission data frames. A storage stores a limiting value of the number value of retransmission. A determination device determines whether the number value of retransmission of each of the first transmission data frames exceeds the limiting value. A transmission buffer buffers the first transmission data frames for which it is determined that the number value of retransmission does not exceed the limiting value, and discards the first transmission data frames for which it is determined that the number value of retransmission exceeds the limiting value, of the first transmission data frames. A retransmitting device retransmits the first aggregation frame in which the first transmission data frames buffered in the transmission buffer are aggregated.

A third semiconductor layer 14 is formed on a light receiving surface 13a of a second semiconductor layer 13 so as to cover the light receiving surface 13a of the second semiconductor layer 13 at least partially in a plan view. A first semiconductor layer 10 is formed on an opposite surface of the light receiving surface 13a of the second semiconductor layer 13 so as to overlap the light receiving surface 13a and the third semiconductor layer 14 at least partially in a plan view. In the second semiconductor layer 13, the relative light receiving sensitivity to respective wavelengths of light has the highest value at a wavelength in an infrared region. Thus, even if the intensity of light of the infrared region that is emitted to an object of detection is not increased when sensing by a photodiode is performed using light of the infrared range, it is possible to achieve a photodiode that has a high S / N ratio, which is a ratio of data of received light with respect to noise, and that has high detection accuracy.

A skin care composition is useful for augmenting cellular metabolism in skin cells and thereby enhancing the regulation of intracellular signaling. The composition comprises a primer for skin cell mitochondrial function, such as a Krebs cycle intermediate, a precursor of a Krebs cycle intermediate, salts or esters thereof, or combinations thereof. The composition may also include antioxidants for free radical regulation and a pharmaceutically acceptable topical vehicle, such as an emollient base for skin health. A method for stimulating the mitochondrial activity of skin cells comprises administering to the skin of a person in need thereof a composition as described herein.

Apparatus and method for removal of particles and VOC from an airstream, in which particles carried by the airstream are charged by a corona ionizer and then collected by an electrically enhanced filter downstream of the ionizer. A catalytic filter downstream of the electrically enhanced filter removes VOC as well as ozone generated by the ionizer.

Adsorbed gaseous species and elements in a carbon (C) powder and a graphite crucible are reduced by way of a vacuum and an elevated temperature sufficient to cause reduction. A wall and at least one end of an interior of the crucible is lined with C powder purified in the above manner. An Si+C mixture is formed with C powder purified in the above manner and Si powder or granules. The lined crucible is charged with the Si+C mixture. Adsorbed gaseous species and elements are reduced from the Si+C mixture and the crucible by way of a vacuum and an elevated temperature that is sufficient to cause reduction but which does not exceed the melting point of Si. Thereafter, by way of a vacuum and an elevated temperature, the Si+C mixture is caused to react and form polycrystalline SiC.

The present invention pertains to the use of the protein phenylalanine ammonia-lyase, as well as the biologically-active derivatives of the said protein for preventing or treating diseases associated with a phenylalanine imbalance in a human or animal body. More particularly, the present invention relates to the therapeutic use of the above-cited molecules for preventing or treating a phenylalanine imbalance in vivo. This invention also deals with therapeutic compositions comprising a pharmaceutically active amount of the above-described therapeutic molecules as well as with therapeutic methods using the said therapeutic compositions. Finally, the present invention relates to processes for selecting more therapeutically-effective variants of said protein as well as to the selected variants themselves.

A fuel cell (1) having an electrode comprising an electrocatalyst (32) on a support, wherein the support is a mesh (30) of conductive material such as a metal, metal alloy and metal composite (e.g. titanium or titanium alloy), is disclosed, as well as a method of operating such a fuel cell by contacting a fuel and an oxidant on said electrode. The electrolyte of the fuel cell may be an ion exchange membrane.

The present invention pertains to the use of the protein phenylalanine ammonia-lyase, as well as the biologically-active derivatives of the said protein for preventing or treating diseases associated with a phenylalanine imbalance in a human or animal body. More particularly, the present invention relates to the therapeutic use of the above-cited molecules for preventing or treating a phenylalanine imbalance in vivo. This invention also deals with therapeutic compositions comprising a pharmaceutically active amount of the above-described therapeutic molecules as well as with therapeutic methods using the said therapeutic compositions. Finally, the present invention relates to processes for selecting more therapeutically-effective variants of said protein as well as to the selected variants themselves.