75results about How to "High Sensitivity Features" patented technology

A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The second area is disposed nearer to the gate electrode than the first area and has a second electron affinity smaller than the first electron affinity. The third area is disposed farther from the gate electrode than the first area and has a third electron affinity smaller than the first electron affinity. At least an oxygen concentration at the third area is lower than an oxygen concentration at the first area.

A reflective resin sheet is bonded to one face of a supporting substrate transmitting a radiation ray and a resin sheet of the same material as that of the reflective resin sheet to the other face of the supporting substrate. A phosphor layer converting a radiation ray into visible light is formed additionally on the reflective resin sheet formed on one face of the supporting substrate. The phosphor layer is enclosed with an additional moisture-proof layer and the reflective resin sheet. It is possible to obtain a scintillator panel higher in sensitivity characteristics, stabilized in quality and more cost-effective by placing the reflective resin sheet between the supporting substrate and the phosphor layer.

A photo-electric converting apparatus 100 has an arrangement in which a photo-electric converting apparatus 3 is formed on the surface of a substrate 1, an insulating film 11 is formed on the substrate 1, an uneven portion 18 having concavities and convexities in the thickness direction of the substrate 1 is formed on at least a part of the interface between the substrate 1 of the photo-electric converting portion 3 and the insulating film 11 and a recombination region 19 for decreasing a dark current is formed so as to contain the uneven portion 18 within the photo-electric converting portion 3. This photo-electric converting apparatus becomes able to obtain a high sensitivity characteristic and to suppress a dark current from being increased by a decrease of the interface states.

Provided is a thin film transistor which can be made at a low temperature and display high field effect mobility. The thin film transistor comprises an active layer having oxide semiconductor layer. The active layer (12) comprises a first area A1 having a first electronic appetency X1 along the film thickness direction from the gate electrode side and a second area A2 of the second electronic appetency X2 smaller than the first electronic appetency X1, and forms a trap type potential employing the first area A1 as the trap layer and employing the second area A2 and the gate insulating film (15) as a barrier layer. In the invention, the active layer (12) is an oxide semiconductor layer composed of a (In2O3), b (Ga2O3), and c (ZnO), thereby making the b/ (a plus b) of the second area A2 greater than b /(a plus b) of the first area A1.

An X-ray detector comprising a scintillation layer separated by a partition for each pixel and a photodiode for converting fluorescent light, which is converted by the sciltillation layer, into a signal charge, wherein when an average particle diameter of phosphor particles forming the scintillation layer is Ds and an average particle diameter forming the partition is Dw, Ds>Dw is satisfied.

A radiation detector comprises an electrode substrate, pixel electrodes provided on the electrode substrate, and detecting electric signals, a radiation conversion layer provided on the pixel electrodes, and converting incident radiations into electric signals, upper electrodes provided at a position on the radiation conversion layer opposite to the pixel electrodes, and a protective layer provided on the upper electrode, the protective layer having a flexural modulus not more than a flexural modulus of the electrode substrate.

The invention belongs to the photoelectronic technical field, characterized in that: it adopts electron beam exposure and dry-etching process to form a photon crystal double-waveguide structure on semiconductor, where the two ends of the photon crystal waveguide are connected with light guide connection light waveguides and it removes part of the sacrificial layer by wet etching process to form a bridge support structure. By reverse coupling action of the photon crystal double waveguide, the light of evenly symmetric transmission mode cross over frequency can be reversely coupled from straight-through waveguide into coupling waveguide so as to cause the transmission spectrum of the straight-through waveguide has obvious hollows. When the detected fluid fills periodical holes of photon crystal or upper and lower spaces of the photon crystal layer, dispersion characteristic of the transmission mode in the photon crystal double waveguide is changed, or changed by external force, which can cause variation of evenly symmetric transmission mode cross over frequency so as to cause variation of transmission spectrum of the straight-through waveguide, thus implementing microflow refractivity detection and sensing of high sensitivity and integrated photon crystal structure.

The invention relates to a primer middle sequence interference PCR (Polymerase Chain Reaction) technology. The improved PCR technology is characterized in that one segment of relatively non-complemented or same-sequence basic group primer molecules in the intermediate domain of primers perform the antisense interference inside and outside so as to competitively destroy the polymerization among the primers to selectively inhibit the primer dimer (PD) from being amplified. For the interference of the intermediate domain of the primers, based on the primers optimally selected by the conventional design principle, the technology that the intermediate domain (ID) of a pair of the primers are in parallel but are not complemented with each other or are in the same sequence or/and the technology that ID antisense oligonucleotides (Oligo) are added into the primers to perform the interference action or/and the Oligo antonymy is carried out in the primer molecules via the ID so as to perform the interference action are adopted, or the combined technology of the three types of the technologies is adopted. As a result, only the ID of the primers is interfered while the target specific amplification is not influenced; the combining force acting on the minority of base-group pairing hydrogen bonds at the tail end and the base-group hydrogen bonds outside the tail end due to the action of the primers is dispersed to a maximum extent, so that the PD is selectively inhibited. Therefore, the PD accumulation in the PCR system is avoided. If the mineral oil is additionally used, the sealed primers can slowly release the hot starting and the UDG pretreatment so as to prevent aerosol glue as a byproduct of the PCR system from causing the pollution. Consequently, the nucleic acid is amplified reliably and the real-time fluorescence PCR is quantified accurately.

The invention discloses a resistance-changing capacitance-changing composite two-dimensional strain sensor and a preparation method thereof. The resistance-changing capacitance-changing composite two-dimensional strain sensor proposed by the invention is of a three-layer structure including an upper plate, an insulating dielectric layer and a lower plate of of a parallel plate capacitor in design.The conductive materials for the upper plate and the lower plate are selected from metals having a micro/nano structure, a carbon conductive materials or metal-carbon mixed conductive materials, thebipolar plate patterns are designed in a serpentine shape, and the upper plate and the lower plate of the capacitor are simultaneously used as a resistance-changing tensile strain sensor. The resistance-changing capacitance-changing composite two-dimensional strain sensor of the invention detects a tensile strain in a horizontal direction through a capacitance-changing phenomenon, detects a tensile strain in ae vertical direction through a resistance-changing phenomenon, and detects a tensile strain in a two-dimensional orthogonal direction by using the resistance-changing capacitance-changingcomposite form, so as to have flexible and tensile characteristics; and the resistance-changing tensile sensor adopts a permeable conductive network structure and has good sensitivity.

The invention relates to a method for improving surface stress sensitivity of a resonant ultrathin cantilever beam sensor, and belongs to the technical field of micro-mechanical sensing. The method is particularly characterized in that self-assembling monomolecular sensitive films capable of identifying selection specificity can be grown on the upper surface and the lower surface of an ultrathin resonant cantilever beam sensor; after specificities of sensitive molecules and target molecules to be detected are combined, interaction among the target molecules generates surface stress on the surfaces of the cantilever beam; and the combined action of the upper surface stress and the lower surface stress causes change of elasticity coefficient of the cantilever beam so as to change inherent resonance frequency of the cantilever beam, and achieve detection for the target molecules through measuring the change of the resonance frequency. Compared with the prior method for sensitivity test by using a mass adsorption method, the method for improving the surface stress sensitivity can carry out biochemical trace test, and the sensitivity can be improved by one order of magnitude. The method has the characteristics of simple principle, high sensitivity and easy realization.

There is provided an angular velocity sensor, including: a flexible part connecting a fixing part to an oscillation unit; a driving unit formed on the flexible part or the oscillation unit to oscillate the oscillation unit; a sensing unit formed on the flexible part or the oscillation unit to sense a displacement of the oscillation unit according to an angular velocity input; a control piezoelectric element formed on the flexible part to control rigidity of a motion of the oscillation unit; and an impedance element electrically connected to the control piezoelectric element to apply impedance to the control piezoelectric element.

A surface plasmon slow-light gyroscope and the preparation method thereof are provided. The surface plasmon waveguide transmission signal is adopted so as to realize the high sensitivity of the slow-light gyroscope. The surface plasmon slow-light gyroscope includes an interference type and a resonance type surface plasmon waveguide optic gyroscopes, wherein the interference type waveguide structure gyroscope is composed of an open-ring waveguide and the resonance type waveguide structure gyroscope is composed of a closed-ring waveguide. The surface plasmon slow-light gyroscope is characterized in that light-wave signal is replaced by the surface plasmon wave and optical waveguide loop is replaced by the surface plasmon waveguide loop with a structure of metallic nanometer defect, nano-particle, nano-wire, nano-film or nano-lattice. The preparation process is described as follows: a. the open-ring metallic nano-wire is introduced to the interference type surface plasmon slow-light gyroscope, so as to form the surface plasmon waveguide structure, and further form the signal channel in the optical gyroscope; and b. the closed-ring metallic nano-wire is introduced to the resonance type surface plasmon slow-light gyroscope, so as to form the surface plasmon waveguide structure and further form the signal channel in the optical gyroscope.

A current sensor includes: four magnetic sensor elements arranged within a plane orthogonal to a measured current, having a symmetrical magnetic characteristics curve, and adapted to convert a magnitude of a magnetic field into an electrical signal and output the electrical signal; a bridge circuit including the four magnetic sensor elements; and a bias magnetic field application member adapted to applying a bias magnetic field to the magnetic sensor elements.

A pressable explosive composition is provided. The composition includes at least 40 weight percent of substantially uncoated fuel particles, a nitramine mechanically blended with the substantially uncoated fuel particles, and a binder coating the nitramine. The binder constitutes about 1 to about 6 weight percent of the pressable explosive composition. Also provided are a pressed thermobaric explosive, weapons containing the pressed thermobaric explosive, and methods for making the composition and thermobaric explosive.

To provide a method for producing a solid-state imaging device enabling an improvement of a light sensitivity characteristic in a light receiving unit, a solid-state imaging device in which the light sensitivity characteristic is improved, and a camera provided with the solid-state imaging device. A shield film projected around the light receiving unit is formed on a substrate in which the light receiving unit is formed; an transparent insulation film is formed on the shield film; a sidewall insulation film is formed by etch-back of the insulation film, in a side wall of the shield film; a mask layer having an aperture at a position corresponding to the light receiving unit is formed on the shield film; and the shield film is etched by using the sidewall insulation film and the mask layer as a mask to form an aperture portion exposing the light receiving unit.

In order to implement a solid-state imaging device with high photo-sensitivity that includes a light collecting part which can reduce undesired variations during manufacture and which has high light collection efficiency, the solid-state imaging device includes: a photodiode ( 8 ) which converts incident light ( 13 ) into electric charges; a convex lens layer ( 15 ) which is formed above the photodiode ( 8 ) and through which the incident light is transmitted; and a concavo-convex lens layer ( 11 ) which is formed on and around the lens layer ( 15 ) and which collects the incident light and outputs the incident light to the lens layer ( 15 ). A refractive index of the lens layer ( 15 ) is greater than a refractive index of the lens layer ( 11 ). A thickness and a width of the lens layer ( 15 ) are set to achieve a predetermined focal length for light of a predetermined wavelength range. The lens layer (15) is made of one of a BPSG film, a TEOS film, a benzocyclobuthane and polyimide based resin.

This solid-state imaging device is provided with: a substrate (50); and a red pixel (10) having a red charge storage portion (11), a blue pixel (20) having a blue charge storage portion (21), and a green pixel (30) having a plurality of green charge storage portions (31a, 31b), said pixels being provided within the substrate (50). The plurality of green charge storage portions (31a, 31b) are arranged within the substrate (50) in the thickness direction of the substrate (50).

A solid-state imaging device is provided, which comprises unit pixel portions. Each unit pixel portion comprises a first conductivity type substrate, a second conductivity type semiconductor layer, a first conductivity type well region, a light receiving region for generating electric charges when irradiated with light, an electric charge accumulation region for accumulating the electric charges from the light receiving region, and a transistor capable of reading out a signal corresponding to an amount of the electric charges accumulated in the electric charge accumulation region. A surface of the light receiving region is covered with an insulating film made of the same material as that of a gate insulating film of the transistor.