Semiconductor device packaging method and packaging apparatus

Abstract

The present application provides a method for degassing the surface of a substrate, a semiconductor device packaging method and a packaging device for performing the packaging method. The method for degassing the surface of a substrate comprises the following steps: S1, opening a degassing cavity; S2, feeding a plurality of substrates into the degassing cavity; S3, closing the degassing cavity; S4, simultaneously degassing the plurality of substrates in the degassing cavity; S5, opening the degassing cavity; and S6, feeding the plurality of substrates out of the degassing cavity. The method for degassing the surface of a substrate according to the first aspect of the present application can inhibit the warping of the substrate and the insufficient degassing of some areas during the degassing process.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device packaging technology, and more particularly to semiconductor device packaging methods and packaging equipment. Background Technology

[0002] In the packaging process of semiconductor devices, the surface of the substrate (such as a wafer) may contain organic materials or adsorbed H2O gas. Therefore, a degassing process is required before coating to remove the adsorbed H2O gas, organic solvents, etc. from the surface of the substrate, thereby ensuring that the density, adhesion and other properties of the subsequently deposited film are qualified.

[0003] For example, in advanced panel-level packaging processes, wafer reconstruction is required. The fabricated wafer is diced into small wafers, which are then bonded to the wafer or a square carrier glass substrate using adhesive. Next, a PI (polyimide) film is coated on top for planarization, and then an RDL (Redistribution Layer) is fabricated to bring out the I / O electrodes from the wafer. Since the adhesive and PI film contain a large amount of solvent, a high-temperature degassing process is required to evaporate the solvents from the adhesive and PI film.

[0004] However, in known technologies, substrates are prone to warping and insufficient degassing in some areas during the degassing process. Summary of the Invention

[0005] This invention aims to at least partially solve one of the known technical problems. To this end, this invention proposes a method for degassing the surface of a substrate, which can suppress warping of the substrate during the degassing process and insufficient degassing in certain areas. Furthermore, this invention also proposes a semiconductor device packaging method and a packaging apparatus for performing this packaging method.

[0006] The method for degassing a substrate surface according to a first aspect of the present invention includes the following steps:

[0007] S1. Open the degassing chamber;

[0008] S2. Multiple substrate sheets are fed into the degassing chamber;

[0009] S3. Close the degassing chamber;

[0010] S4. Degas multiple substrates simultaneously within the degassing chamber;

[0011] S5. Open the degassing chamber;

[0012] S6. Discharge multiple substrates from the degassing chamber.

[0013] The method for degassing the surface of a substrate according to the first aspect of the present invention has the following beneficial effects: it can suppress warping of the substrate during the degassing process and the situation of insufficient degassing in some areas.

[0014] In some embodiments, in step S2, multiple substrates are held in the degassing chamber along the thickness direction of the substrate.

[0015] In some embodiments, in step S4, the substrate is heated from both sides of each substrate.

[0016] In some embodiments, in step S4, the substrate is heated from below by a heating plate and from above by heating gas.

[0017] In some embodiments, in step S6, multiple substrates are sequentially discharged in the same order as the multiple substrates are fed in.

[0018] The semiconductor device packaging method according to a second aspect of the present invention includes the following steps:

[0019] The degassing step involves degassing the surface of the substrate used as a semiconductor device.

[0020] A pre-cleaning step is performed on the surface of the substrate after the degassing step.

[0021] The coating step involves applying a coating to the surface of the substrate after the pre-cleaning step.

[0022] In the degassing step, any of the above methods for degassing the substrate surface is used.

[0023] The semiconductor device packaging method according to the second aspect of the present invention has the following advantages: it can suppress warping of the substrate during the degassing process and insufficient degassing in some areas.

[0024] In some embodiments, between the degassing step and the pre-cleaning step, a cooling step is further included, in which multiple substrates delivered from the degassing chamber are stored along the thickness direction of the substrates and the multiple substrates are cooled.

[0025] According to a third aspect of the present invention, a packaging apparatus for the above-described semiconductor device packaging method includes a vacuum system having a plurality of process cavities and a transfer cavity, wherein a substrate is transferred between the plurality of process cavities via the transfer cavity, and each process cavity includes at least:

[0026] A degassing chamber in which multiple substrates are simultaneously degassed;

[0027] A pre-cleaning chamber, in which the substrate is pre-cleaned;

[0028] A coating chamber in which the substrate is coated.

[0029] The packaging apparatus according to the third aspect of the present invention has the following beneficial effects: it can suppress warping of the substrate during the degassing process and the situation of insufficient degassing in some areas.

[0030] In some embodiments, the degassing chamber includes multiple chambers.

[0031] In some embodiments, the process chamber further includes a cooling chamber, which buffers multiple substrates sent from the degassing chamber, and the multiple substrates are cooled within the cooling chamber.

[0032] In some embodiments, the plurality of process cavities are arranged in a circular pattern around the transfer cavity. Attached Figure Description

[0033] Figure 1 This is a schematic flowchart of one embodiment of the method for degassing the surface of a substrate according to the present invention.

[0034] Figure 2 This is a schematic flowchart of one embodiment of the semiconductor device packaging method of the present invention.

[0035] Figure 3 This is a schematic flowchart illustrating another embodiment of the semiconductor device packaging method of the present invention.

[0036] Figure 4 This is a simplified schematic diagram of one embodiment of the packaging device of the present invention.

[0037] Figure 5 This is a simplified schematic diagram of one embodiment of the degassing chamber of the present invention.

[0038] Figure 6 This is a simplified schematic diagram of one embodiment of the cooling chamber of the present invention. Detailed Implementation

[0039] The embodiments of this implementation are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this implementation, and should not be construed as limiting this implementation.

[0040] In the description of this embodiment, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this embodiment and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this embodiment.

[0041] In the description of this embodiment, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0042] In the description of this embodiment, unless otherwise explicitly limited, terms such as setting, installing, and connecting should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this embodiment in conjunction with the specific content of the technical solution.

[0043] Reference Figure 1 And supplementary reference Figure 5 The method for degassing the surface of a substrate 200 according to the first embodiment includes steps S1 to S6. In S1, the degassing chamber 101 is opened. In S2, multiple substrates 200 are fed into the degassing chamber 101. In S3, the degassing chamber 101 is closed. In S4, the multiple substrates 200 are simultaneously degassed within the degassing chamber 101. In S5, the degassing chamber 101 is opened. In S6, the multiple substrates 200 are discharged from the degassing chamber 101.

[0044] The method for degassing the surface of the substrate 200 according to this embodiment can suppress warping of the substrate 200 during the degassing process and insufficient degassing in some areas.

[0045] Specifically, in known technologies, there are degassing methods that sequentially degas each substrate 200. For example, the substrates 200 sequentially enter the degassing chamber 101, are heated sequentially, and are ejected sequentially to meet production cycle requirements. In this case, the valve 102 (e.g., a gate valve) of the degassing chamber 101 needs to be frequently opened and closed. This causes airflow disturbance, which leads to uneven temperature distribution of the substrates 200, potentially causing warping. Furthermore, the temperature of the substrate 200 near the valve 102 tends to be lower, resulting in insufficient degassing in that area. Additionally, due to the requirements of the vacuum chamber, trace amounts of water vapor (H2O) and oxygen (O2) may still exist within it. Frequent opening of the valve 102 in the degassing chamber 101 allows these trace amounts of external water vapor and oxygen to enter, potentially causing oxidation of the electrodes (e.g., Cu) on the surface of the substrate 200.

[0046] In the method for degassing the surface of the substrate 200 in this embodiment, by feeding multiple substrates 200 into the degassing chamber 101, simultaneously degassing the substrates 200, and then feeding the multiple substrates 200 out of the degassing chamber 101, the valve 102 can be opened only once in the wafer feeding step (S2) and once in the wafer ejection step (S6). Therefore, the airflow and temperature fluctuations caused by the frequent opening and closing of the valve 102 in the degassing process of sequential wafer feeding and ejection in the known art can be avoided, and problems such as substrate warping, insufficient degassing, and electrode oxidation on the surface of the substrate 200 caused by airflow and temperature fluctuations can be improved.

[0047] In this embodiment, the degassing chamber 101 is degassed, for example, by heating. The temperature inside the degassing chamber 101 is set to, for example, 80°C to 140°C, and the pressure inside the degassing chamber 101 is set to, for example, 1 Pa to 40 Pa. After the temperature and pressure inside the degassing chamber 101 reach the preset conditions, step S1 can be executed, that is, the valve 102 (e.g., a slide valve) of the degassing chamber 101 can be opened.

[0048] After opening valve 102 of degassing chamber 101, step S2 is executed, that is, multiple substrates 200 are fed into degassing chamber 101. Each substrate 200 (from, for example, the infeed chamber 103, as shown in the reference) Figure 4 The time for feeding the substrates into the degassing chamber 101 is set to 10s to 20s. The number of substrates 200 is not particularly limited, for example, 4 to 15 pieces. The time for all substrates 200 to be fed is approximately 1min to 3min. In addition, in step S2, multiple substrates 200 are held in the degassing chamber 101 along the thickness direction of the substrates 200.

[0049] After multiple substrates 200 are fed into the degassing chamber 101, step S3 is performed, i.e., the degassing chamber 101 is closed. Then, step S4 is performed, i.e., the multiple substrates 200 are simultaneously degassed within the degassing chamber 101. In step S4, the degassing process takes 40 to 50 minutes. Furthermore, in step S4, the substrates 200 are heated from both sides, thereby improving the thermal uniformity of the substrate surface. Additionally, in step S4, the substrates 200 are heated from below by a heating plate 104, and heated from above by a heating gas such as nitrogen (N2). Thus, in step S4, the multiple substrates 200 are degassed by heating.

[0050] After the degassing heating treatment has reached the set time (e.g., one of 40 min to 50 min), step S5 is executed, that is, the degassing chamber 101 is opened. Then step S6 is executed, that is, multiple substrates 200 are sent out from the degassing chamber 101. In step S6, the multiple substrates 200 are sent out sequentially in the same order as they were sent in. In other words, for example, the substrate 200 that was sent into the degassing chamber 101 first will come out of the degassing chamber 101 first after the heating and degassing treatment is completed (i.e., first-in, first-out). In this way, the time that all the substrates 200 spend in the degassing chamber 101 is kept approximately the same.

[0051] In addition, the temperature inside the degassing chamber 101 remains constant during steps S1 to S6, thereby further suppressing surface unevenness of the substrate 200.

[0052] Reference Figure 2 And supplementary reference Figure 1 The above-described method for degassing the surface of the substrate 200 can be used in semiconductor device packaging methods. Specifically, the semiconductor device packaging method according to the second embodiment includes: a degassing step S301, a pre-cleaning step S302, and a coating step S303.

[0053] In the degassing step S301, the surface of the substrate 200, which serves as a semiconductor device, is degassed.

[0054] After the degassing step S301, a pre-cleaning step S302 is performed. In the pre-cleaning step S302, the surface of the substrate 200 is pre-cleaned.

[0055] After the pre-cleaning step S302, the coating step S303 is performed. In the coating step S303, the surface of the substrate 200 is coated.

[0056] Furthermore, in the degassing step S301, any of the above-mentioned methods for degassing the surface of the substrate 200 are used.

[0057] The semiconductor device packaging method according to this embodiment can suppress warping of the substrate 200 during the degassing process and insufficient degassing in some areas.

[0058] In the pre-cleaning step S302, cleaning methods such as Ar-Plasma cleaning, vacuum heating cleaning, ultraviolet radiation cleaning, discharge cleaning, and ion beam cleaning can be used. Taking Ar-Plasma cleaning as an example, Ar plasma is generated in the pre-cleaning chamber 109. The Ar plasma bombards the surface of the substrate 200, removing the oxide layer on the exposed surface of the substrate 200, such as the surface of a copper electrode, thereby ensuring good contact of subsequent metal films.

[0059] Furthermore, in the coating step S303, PVD coating methods can be used, for example. More specifically, magnetron sputtering can be used to deposit Ti films, Cu films, etc., on the surface of the substrate 200.

[0060] Reference Figure 3 In some embodiments, a cooling step S304 may be included between the degassing step S301 and the pre-cleaning step S302. In the cooling step S304, multiple substrates 200 that have been fed from the degassing chamber 101 are stored along the thickness direction of the substrates 200 and cooled. Specifically, the cooling step S304 is performed, for example, in a vacuum cooling chamber 106. After the degassing heating treatment has reached a set time (e.g., one of 40 min to 50 min), the degassing chamber 101 is opened. Then, step S6 is performed, that is, the multiple substrates 200 are fed out of the degassing chamber 101. Specifically, after the degassing step S301, the multiple substrates 200 that have been fed from the degassing chamber 101 are sequentially fed into the cooling chamber 106 in the same order as the multiple substrates 200 were fed in. In the cooling chamber 106, the multiple substrates 200 can be held at intervals along the thickness direction as in the degassing chamber 101. In the cooling step S304, the substrate 200 can be naturally cooled under vacuum.

[0061] Since the substrate 200 has a high temperature after the degassing step S301, and the pre-cleaning step S302 and the coating step S303 need to be performed at room temperature or low temperature, the substrate 200 needs to be cooled between the pre-cleaning step S302 and the coating step S303 to avoid process fluctuations. In this embodiment, by adding a cooling step S304 between the degassing step S301 and the pre-cleaning step S302, it can not only cool the substrate 200 that has just completed the degassing step S301, but also buffer multiple substrates 200 that are simultaneously sent out from the degassing chamber 101, thereby facilitating the entry of the substrates 200 one by one into subsequent steps such as the pre-cleaning step S302 and the coating step S303.

[0062] Reference Figures 4 to 6 and mainly refer to Figure 4 The semiconductor device packaging method of the second embodiment described above can be performed in the semiconductor packaging apparatus 100. Specifically, the packaging apparatus 100 according to the third embodiment is used for the above-described semiconductor device packaging method. This packaging apparatus 100 has a vacuum system 107, which includes a plurality of process chambers 100a and a transfer chamber 108. Substrate 200 is transferred between the plurality of process chambers 100a via the transfer chamber 108. Each process chamber 100a includes at least: a degassing chamber 101, a pre-cleaning chamber 109, and a coating chamber 110. In the degassing chamber 101, multiple substrates 200 are simultaneously degassed. In the pre-cleaning chamber 109, the substrates 200 are pre-cleaned. In the coating chamber 110, the substrates 200 are coated.

[0063] According to the packaging apparatus 100 of this embodiment, warping of the substrate 200 and insufficient degassing in some areas during the degassing process can be suppressed. Specifically, in the packaging apparatus 100 of this embodiment, since multiple substrates 200 are simultaneously degassed in the degassing chamber 101, by feeding multiple substrates 200 into the degassing chamber 101, simultaneously degassing the substrates 200, and then feeding the multiple substrates 200 out of the degassing chamber 101, the valve 102 of the degassing chamber 101 can be opened only once in the wafer feeding step and once in the wafer ejection step. Therefore, the airflow and / or temperature fluctuations caused by the frequent opening and closing of the valve 102 in the sequential wafer feeding and ejection method of the degassing process in the prior art can be avoided, and problems such as substrate warping, insufficient degassing, and oxidation of the surface electrodes of the substrate 200 caused by airflow and temperature fluctuations can be improved. Thus, warping of the substrate 200 and insufficient degassing in some areas during the degassing process can be suppressed.

[0064] In some embodiments, the multiple process chambers 100a of the packaging apparatus 100 can be arranged in a circular pattern around the transfer chamber 108. Specifically, the multiple process chambers 100a and the transfer chamber 108 as a whole can be a single vacuum system 107. Each process chamber 100a and the transfer chamber 108 can be interconnected and isolated from the outside. Each process chamber 100a is equipped with, for example, a vacuum pump 111. During vacuuming, the process chamber 100a and the transfer chamber 108 as a whole are simultaneously evacuated, thereby enabling the packaging apparatus 100 to have a single vacuum system 107. By placing each process chamber 100a within the same vacuum system 107, the vacuum environment of each process chamber 100a can be kept approximately consistent, thus suppressing process fluctuations caused by changes in the vacuum environment. In particular, in this embodiment, fluctuations in airflow and / or temperature caused by the opening or closing of the valve 102 of the degassing chamber 101 can be further avoided, and problems such as substrate warping, insufficient degassing, and oxidation of the surface electrodes of the substrate 200 caused by airflow and temperature fluctuations can be further improved.

[0065] The transfer chamber 108 is located in the middle of the packaging equipment 100. The transfer chamber 108 includes, for example, a transfer robot 112, which transfers the substrate 200 between the various process chambers 100a. For example, the transfer robot 112 transfers the substrate 200 in the degassing chamber 101 to the pre-cleaning chamber 109. After pre-cleaning, the substrate 200 in the pre-cleaning chamber 109 is transferred to the coating chamber 110. After coating, the substrate 200 is transferred to, for example, the wafer ejection chamber 113.

[0066] In some embodiments, the process chamber 100a may further include a cooling chamber 106, which buffers multiple substrates 200 that are conveyed from the degassing chamber 101 by the transfer chamber 108, and the multiple substrates 200 are cooled within the cooling chamber 106. By providing the cooling chamber 106, not only can the substrates 200 that have just undergone degassing be cooled, but multiple substrates 200 that are simultaneously conveyed from the degassing chamber 101 can also be buffered, thereby facilitating the sequential entry of the substrates 200 into subsequent steps such as the pre-cleaning step S302 and the coating step S303.

[0067] Furthermore, in some embodiments, the process chamber 100a may also include an exit chamber 113 and an entry chamber 103. The entry chamber 103, degassing chamber 101, cooling chamber 106, pre-cleaning chamber 109, coating chamber 110, and exit chamber 113 are arranged in a circular pattern around the transfer robot 112. This facilitates the transfer robot 112 in transferring the substrate 200 within each process chamber 100a. Additionally, the process chamber 100a may include multiple degassing chambers 101 to improve production cycle time. The location of the degassing chambers 101 is not particularly limited; for example, they may be distributed adjacently or separately arranged on both sides of the cooling chamber 106.

[0068] In the packaging apparatus 100 of this embodiment, since the degassing chamber 101 performs degassing on the substrate 200 simultaneously, the valve 102 is opened only once during the wafer feeding step and once during the wafer ejection step. Therefore, multiple degassing chambers 101 can be easily configured without causing interference between different degassing chambers 101. For example, after the transfer robot 112 sequentially feeds the substrate 200 into one of the degassing chambers 101, the valve 102 of the degassing chamber 101 closes and the process continues. Simultaneously, the transfer robot 112 can sequentially feed the substrate 200 to be processed into another degassing chamber 101 without mutual interference. Similarly, when one degassing chamber 101 completes its process while another degassing chamber 101 is in progress, the transfer robot 112 can sequentially feed the degassed substrate 200 into the cooling chamber 106. Therefore, the number of degassing chambers 101 can be easily increased to improve production cycle time. (Refer to...) Figure 5 Within the degassing chamber 101, a first elevator 114 may be provided, for example. The first elevator 114 includes a first lifting motor 115 and a multi-layered first base 116 for supporting the substrate 200. An air source unit 105 is provided on the upper part of the first base 116, and a heating plate 104 is provided on the lower part of the first base 116, for example. When heating the substrate 200, the heating plate 104 heats the substrate 200 from below, while the air source unit 105 supplies a heating gas, such as nitrogen (N2), to heat the substrate 200 from above. The degassing chamber 101 has, for example, an outlet, and a valve 102, such as a slide gate valve, is provided at the outlet. When the valve 102 is open, the degassing chamber 101 is connected to the vacuum system 107. The transfer robot 112 located in the vacuum system 107 can sequentially send multiple substrates 200 from, for example, the loading chamber 103 into the degassing chamber 101, or sequentially send multiple substrates 200 out from, for example, the degassing chamber 101, for example, into the cooling chamber 106.

[0069] Reference Figure 6Within the cooling chamber 106, a second elevator 117 may be provided, for example. The second elevator 117 also includes, for example, a second lifting motor 118 and multiple layers of second bases 119 for placing the substrate 200. The number of layers of the second bases 119 is the same as the number of layers of the first bases 116. Thus, after degassing is completed in the degassing chamber 101, the transfer robot 112 of the transfer chamber 108 can deliver the substrate 200 piece by piece from the first bases 116 in the degassing chamber 101 to the second bases 119 in the cooling chamber 106.

[0070] The pre-cleaning chamber 109 can be, for example, an Ar-Plasma-based cleaning chamber. The internal structure of the pre-cleaning chamber 109 can be a known structure, for example, including a plasma generator, a gas source input, and a gas equalization section. Examples of plasma generators include inductive plasma generators and capacitive plasma generators.

[0071] The coating cavity 110 can also be a PVD (physical vapor deposition) based coating cavity 110, for example. Examples of PVD coating cavities 110 include sputtering deposition and ion deposition. Similarly, the internal structure of the coating cavity 110 can be a known structure, for example.

[0072] In addition, in order to improve production efficiency and to facilitate smooth interaction with the degassing chamber 101 and the cooling chamber 106, the packaging equipment 100 of this embodiment may also include multiple pre-cleaning chambers 109 and multiple coating chambers 110.

[0073] Although embodiments of this implementation have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of this implementation, the scope of which is defined by the claims and their equivalents.

Claims

1. A semiconductor device packaging method, which can be performed in a packaging apparatus, wherein, The packaging equipment has a vacuum system containing multiple process chambers and a transfer chamber, wherein a substrate is transferred between the multiple process chambers via the transfer chamber. The semiconductor device packaging method comprises the following steps: The degassing step involves degassing the surface of the substrate used as a semiconductor device, and the degassing step includes: S1. Open the degassing chamber; S2. Multiple substrate sheets are fed into the degassing chamber; S3. Close the degassing chamber; S4. Degas multiple substrates simultaneously within the degassing chamber; S5. Open the degassing chamber; S6. Discharge multiple substrate sheets from the degassing chamber; The cooling step involves storing the multiple substrates that were sent out after the degassing step along the thickness direction of the substrates and cooling the multiple substrates. A pre-cleaning step is performed on the surface of the substrate after the cooling step. The coating step involves applying a coating to the surface of the substrate after the pre-cleaning step.

2. The semiconductor device packaging method according to claim 1, characterized in that, In step S2, multiple substrates are held in the degassing chamber along the thickness direction of the substrate.

3. The semiconductor device packaging method according to claim 1 or 2, wherein In step S4, the substrates are heated from both sides of each substrate.

4. The semiconductor device packaging method according to claim 3, wherein In step S4, the substrate is heated from below by a heating plate and from above by heating gas.

5. The semiconductor device packaging method according to claim 2, characterized in that, In step S6, the multiple substrates are sequentially fed out in the same order as the multiple substrates were fed in.

6. Packaging equipment, characterized in that, For performing the semiconductor device packaging method according to any one of claims 1 to 5, the packaging equipment has a vacuum system, the vacuum system having a plurality of process cavities and a transfer cavity, wherein a substrate is transferred between the plurality of process cavities via the transfer cavity, and the process cavity includes at least: A degassing chamber in which multiple substrates are simultaneously degassed; A cooling chamber buffers multiple substrates sent from the degassing chamber, and the multiple substrates are cooled within the cooling chamber. A pre-cleaning chamber, in which the substrate is pre-cleaned; A coating chamber in which the substrate is coated.

7. The packaging equipment according to claim 6, characterized in that, The degassing chamber includes multiple chambers.

8. The packaging apparatus of claim 6, wherein, The multiple process cavities are arranged in a circular pattern around the transfer cavity.

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