back end active components, semiconductor components, and semiconductor chips

Abstract

Active components, semiconductor components, and semiconductor chips are provided. An active component includes a channel layer, a top source / drain electrode disposed on a top side of the channel layer, first and second bottom source / drain electrodes disposed on a bottom side of the channel layer, first and second gate structures between the top source / drain electrode and the first bottom source / drain electrode, wherein the first gate structure includes a non-ferroelectric dielectric layer and the second gate structure includes a ferroelectric layer, and third and fourth gate structures between the top source / drain electrode and the second bottom source / drain electrode, wherein the third gate structure includes a non-ferroelectric dielectric layer and the fourth gate structure includes a ferroelectric layer.