Micromechanical component and method for manufacturing a micromechanical component for a sensor or microphone device

Abstract

The invention relates to a micromechanical component for a sensor device or a microphone device, wherein an electrode surface (10a) of a first electrode structure (10) is oriented towards a second electrode structure (12); wherein at least one partial structure (10b) of the first electrode structure (10) is formed entirely from at least one electrically conductive material, and the electrode surface (10a) of the first electrode structure (10) and an opposite surface (10c) of the first electrode structure (10) pointing away from the electrode surface (10a) are outer surfaces of the partial structure (10b); wherein at least one stop structure (14) protruding on the electrode surface (10a) in the direction of the second electrode structure (12) is configured on the first electrode structure (10), and wherein the first electrode structure (10) comprises at least one insulating region (16) formed from at least one electrically insulating material, which extends at least from the electrode surface (10a) up to the opposite surface (10c) of the first electrode structure (10) accordingly, wherein the at least one stop structure (14) is either configured as a protrusion (16a) of the at least one insulating region (16) protruding on the electrode surface (10a) in the direction of the second electrode structure (12) or is framed by the at least one insulating region (16) accordingly.

Description

Technical Field

[0001] This invention relates to a micromechanical component for a sensor or microphone device. The invention also relates to a method for manufacturing the micromechanical component for a sensor or microphone device. Background Technology

[0002] DE102006055147A1 discloses an acoustic transducer structure comprising a diaphragm and a counter electrode, wherein the distance between the diaphragm and the counter electrode can be changed by acoustic wave impacts on the diaphragm. A stop structure is constructed at the counter electrode, which is covered with a silicon oxide / silicon nitride layer having a low oxygen content, and is designed to prevent the diaphragm from adhering to the counter electrode and to prevent charge transfer between the diaphragm and the counter electrode in contact with the stop structure. Summary of the Invention

[0003] The present invention provides a micromechanical component for a sensor or microphone device having the features of claim 1, and a method for manufacturing the micromechanical component for a sensor or microphone device having the features of claim 5.

[0004] Advantages of this invention:

[0005] This invention provides a micromechanical component in which the stability of at least one stop structure of the first electrode structure is improved compared to the prior art. Not only is the stability of at least one stop structure improved, but electrical short circuits between the first electrode structure and the corresponding second electrode structure of the same micromechanical component are reliably prevented. Therefore, the micromechanical component achieved by means of this invention has an advantageous long service life.

[0006] In an advantageous embodiment of the micromechanical component, at least one insulating region is entirely formed of at least one electrically insulating material, which accordingly has a density of less than 10. -8 Conductivity in S / cm and greater than 10 8 The resistivity is Ω·cm. Therefore, even under overload conditions, there is no need / almost no need to worry about electrical short circuits occurring between the corresponding first electrode structure and the second electrode structure acting with it in the same micromechanical component.

[0007] For example, at least one insulating region may be formed at least partially from silicon nitride, silicon dioxide, silicon oxynitride, silicon carbide, undoped silicon and / or undoped germanium, germanium oxide, germanium nitride, germanium oxynitride, germanium carbide, aluminum oxide and / or another metal oxide as at least one electrical insulating material. Therefore, materials commonly used in semiconductor technology can advantageously be used as said at least one electrical insulating material. This facilitates the manufacturability of micromechanical components and helps reduce their manufacturing costs.

[0008] In particular, at least one insulating region can be shaped such that it at least partially surrounds a core structure formed of at least one electrically insulating material and / or conductive material. By selecting the material of the at least one insulating region, it can fulfill additional functions in addition to its electrical insulation function, such as serving as an etch stop layer. By selecting at least one insulating material and / or conductive material for the core structure, the core structure can also fulfill additional functions, such as serving as an etch stop layer and / or a printed conductor layer.

[0009] In an advantageous embodiment of the manufacturing method, the following sub-steps are performed: forming a second electrode structure; depositing at least one sacrificial material layer on the side of the second electrode structure that is subsequently oriented toward the first electrode structure; depositing at least one conductive material of the subsequent first electrode structure on the sacrificial material layer; structuring at least one groove through the at least one conductive material of the subsequent first electrode structure, the groove extending accordingly into the sacrificial material layer; and constructing at least one stop structure and at least one insulating region on the first electrode structure by depositing at least one electrically insulating material in the at least one groove, whereby the at least one stop structure is configured as a protrusion on the electrode surface of the at least one insulating region. The sub-steps described herein can be performed using processes commonly used in semiconductor technology. Therefore, the embodiment of the manufacturing method described herein enables the fabrication of at least one micromechanical component at a relatively low manufacturing cost. Furthermore, the sub-steps mentioned herein can be readily performed at the wafer level.

[0010] In particular, at least one electrically insulating material of the at least one stop structure and the at least one insulating region can first be deposited in at least one groove and on at least a portion of the opposing surface of the first electrode structure. Then, the remaining volume of the at least one groove is correspondingly filled with at least one electrically insulating material and / or at least one conductive material of the core structure. The at least one electrically insulating material of the at least one stop structure and the at least one insulating region covering at least a portion of the opposing surface is additionally covered with at least one second electrically insulating material and / or conductive material of the at least one core structure. The at least one conductive material of the at least one core structure can be, for example, silicon, doped silicon, silicon carbide, germanium, doped germanium, metal, metal silicide, metal nitride, and / or metal oxide, such as indium tin oxide (ITO). In this case, not only does the at least one stop structure have advantageous stability, but the entire first electrode structure achieves additional stability by constructing at least one core structure.

[0011] Alternatively, the at least one groove can first be completely filled with at least one electrically insulating material of the at least one stop structure and at least one insulating region, which is additionally deposited on at least a portion of the opposing surface of the first electrode structure. Then, at least one electrically insulating material and / or a conductive material can be deposited such that the at least one electrically insulating material covering at least a portion of the opposing surface of the at least one stop structure and at least one insulating region is covered with at least one second electrically insulating material and / or a conductive material. In this way, additional stability of the first electrode structure can also be achieved.

[0012] In another advantageous embodiment of the manufacturing method, the following sub-steps are performed: forming a second electrode structure; depositing at least one sacrificial material layer on the side of the second electrode structure that is subsequently oriented toward the first electrode structure; structuring at least one recess in the sacrificial material layer; depositing at least one conductive material of the subsequent first electrode structure on the sacrificial material layer, thereby forming at least one stop structure by filling at least one recess with at least one conductive material of the subsequent first electrode structure; structuring at least one separation trench correspondingly extending to the sacrificial material layer by at least one conductive material of the subsequent first electrode structure, such that at least one portion volume of the at least one stop structure formed by at least one conductive material of the subsequent first electrode structure is correspondingly completely enclosed by at least one separation trench; and constructing at least one insulating region on the first electrode structure by depositing at least one electrically insulating material in at least one separation trench. The sub-steps described herein can also be performed using standard semiconductor technology processes. Therefore, by performing embodiments of the manufacturing method described herein, micromechanical components can also be manufactured at a relatively low cost. Similarly, embodiments of the manufacturing method described herein can advantageously be performed at the wafer level.

[0013] As an advantageous extension, at least one electrically insulating material of the at least one insulating region can be first deposited in at least one separation trench and on at least a portion of the opposing surface of the first electrode structure, and then the remaining volume of the at least one separation trench can be filled with at least one electrically insulating material and / or conductive material of at least one core structure, wherein the at least one electrically insulating material of the at least one insulating region covering at least a portion of the opposing surface is covered with the at least one electrically insulating material and / or conductive material of the at least one core structure. Additional stability of the first electrode structure can also be achieved by means of the extension described herein. Attached Figure Description

[0014] The further features and advantages of the invention will now be explained with reference to the accompanying drawings. The drawings show:

[0015] Figure 1A schematic diagram of a first embodiment of the micromechanical component is shown;

[0016] Figure 2 A schematic diagram of a second embodiment of the micromechanical component is shown;

[0017] Figures 3a to 3c A schematic cross-sectional view is shown to explain a first embodiment of a method for manufacturing micromechanical components;

[0018] Figures 4a to 4c A schematic cross-sectional view is shown to explain a second embodiment of the manufacturing method; and

[0019] Figures 5a to 5c A schematic cross-sectional view is shown to explain a third embodiment of the manufacturing method. Detailed Implementation

[0020] Figure 1 A schematic diagram of a first embodiment of the micromechanical component is shown.

[0021] exist Figure 1 The micromechanical component schematically shown has a first electrode structure 10 and a second electrode structure 12. The first electrode structure 10 and the second electrode structure 12 are arranged relative to each other such that the electrode surface 10a of the first electrode structure 10 is oriented toward the second electrode structure 12. In particular, the second electrode structure 12 can be arranged with respect to the first electrode structure 10 in a direction perpendicular to the electrode surface 10a of the first electrode structure 10. This can be referred to as a parallel arrangement of the second electrode structure 12 with respect to the first electrode structure 10. Furthermore, the first electrode structure 10 and / or the second electrode structure 12 are adjustablely and / or warpedly arranged / constructed such that the distance between the electrode surface 10a of the first electrode structure 10 and the second electrode structure 12 is variable. For example, the adjustment / warping of the first electrode structure 10 and / or the second electrode structure 12 can be triggered by a voltage applied between the two electrode structures 10 and 12 and / or by an external force, especially a pressure or acceleration force, acting on at least one of the electrode structures 10 and 12, such that the distance between the electrode surface 10a of the first electrode structure 10 and the second electrode structure 12 is varied / changed.

[0022] At least one portion of the first electrode structure 10, structure 10b, is entirely formed of at least one conductive material. The electrode surface 10a of the first electrode structure 10 and the opposing surface 10c of the first electrode structure 10, pointing away from the electrode surface 10a, are the outer surfaces of the portion of structure 10b formed of the at least one conductive material. The at least one conductive material of the first electrode structure 10 / its portion of structure 10b can be, for example, at least one semiconductor material and / or at least one metal, particularly at least one metal silicide and / or at least one metal nitride and / or at least one metal carbide and / or at least one metal oxide, such as ITO. Preferably, the at least one conductive material of the first electrode structure 10 / its portion of structure 10b is silicon / polycrystalline silicon, particularly doped silicon / polycrystalline silicon. The second electrode structure 12 may also be formed at least partially of at least one conductive material of the first electrode structure 10 / its portion of structure 10b and / or formed of at least one other conductive material. Preferably, the second electrode structure 12 is at least partially formed of silicon / polycrystalline silicon, particularly doped silicon / polycrystalline silicon.

[0023] On the first electrode structure 10, at least one stop structure / nipple structure 14 protruding toward the second electrode structure 12 on the electrode surface 10a is formed, such that charge transfer between the first electrode structure 10 and the second electrode structure 12 is prohibited when at least one stop structure 14 is in mechanical contact with the second electrode structure 12 (even if a non-zero voltage acts between the two electrode structures 10 and 12). For this purpose, the first electrode structure 10 includes at least one insulating region 16 formed of at least one electrically insulating material, which correspondingly extends at least from the electrode surface 10a to at least the opposing surface 10c of the first electrode structure 10, wherein the at least one stop structure 14 is configured as a protrusion 16a protruding toward the second electrode structure 12 on the electrode surface 10a of the insulating region 16. At least one stop structure 14 is configured such that a protrusion 16a of at least one insulating region 16 extending from the respective stop structure 14 at least up to the opposing surface 10c of the first electrode structure 10 achieves an improved "anchoring" of the at least one stop structure 14 on the first electrode structure 10 / its partial structure 10b formed of at least one conductive material. Therefore, in Figure 1In the schematic reproduction of the micromechanical component 1, the stability of at least one stop structure 14 is significantly improved. Furthermore, the at least one stop structure 14 is configured such that a protrusion 16a of each of at least one insulating region 16 extending from the respective stop structure 14 at least up to the opposing surface 10c of the first electrode structure 10 creates a topology-free / uniform thickness region between the first electrode structure 10 and the second electrode structure 12 within the region of the at least one stop structure 14, without the need for additional CMP steps. The surface distance Δ between the electrode surface 10a of the first electrode structure 10 and the opposing surface 10c is... 10a-10c You can choose any option.

[0024] The partial structure 10b, formed of at least one conductive material, can be understood as a "frame structure" that correspondingly frames at least one stop structure 14 formed of at least one electrically insulating material. The maximum expansion dimension of the partial structure 10b, formed of at least one conductive material, perpendicular to the electrode surface 10a, is preferably greater than or equal to 75% of the maximum expansion dimension of the second electrode structure 12, perpendicular to the electrode surface 10a, and particularly greater than or equal to the maximum expansion dimension of the second electrode structure 12, perpendicular to the electrode surface 10a. This ensures good interaction between the first electrode structure 10 and the second electrode structure 12.

[0025] The mechanical contact surfaces of the corresponding stop structure 14 and the second electrode structure 12 can be arbitrarily selected through appropriate design. Therefore, the mechanical contact surfaces can be designed to ensure a good force distribution of the force applied by the second electrode structure 12 to the stop structure 14. This also helps to improve the stability of at least one stop structure 14 on the first electrode structure 10 / its partial structure 10b formed of at least one conductive material.

[0026] Preferably, at least one insulating region 16 is entirely formed of at least one electrical insulating material, which accordingly has a density of less than 10. -8 The conductivity of S / cm is greater than 10. 8 The resistivity is measured in Ω·cm. For example, at least one insulating region 16 may be made at least partially of silicon nitride, particularly silicon-rich silicon nitride, silicon dioxide, silicon oxynitride, silicon carbide, undoped silicon, undoped germanium, germanium oxide, germanium nitride, germanium oxynitride, and / or metal oxides, particularly aluminum oxide, as said at least one electrical insulating material. However, the materials mentioned herein are for illustrative purposes only.

[0027] exist Figure 1In the example, the at least one insulating region 16 correspondingly has an insulating layer 18 formed of at least one electrically insulating material, which correspondingly surrounds a core structure 20 formed of at least one electrically insulating material and / or a conductive material. By using different materials for the insulating layer 18 and the surrounded core structure 20, the fabrication of micromechanical components can be facilitated, as will be explained below. Preferably, the insulating layer 18 is composed of silicon-rich silicon nitride, while the core structure 20 is composed of silicon dioxide and / or silicon. Furthermore, in Figure 1 In the embodiment, at least one insulating region 16 has a minimum width b oriented parallel to the electrode surface 10a. 16 It is more than twice the thickness of the insulation layer 18.

[0028] Optionally, an insulating layer 18 is additionally deposited on at least a portion of the surface of the opposing surface 10c of the first electrode structure 10, while the core structure 20 also covers the insulating layer 18 and may also cover at least one remaining surface of the opposing surface 10c exposed to at least one insulating layer 18, which covers at least a portion of the surface of the opposing surface 10c. By covering the opposing surface 10c of the first electrode structure 10 at least partially planar by means of the materials of the insulating layer 18 and the core structure 20, an additional "anchoring" of the stop structure 14 to the first electrode structure 10 is achieved. This can also help improve the stability of at least one stop structure 14 on the first electrode structure 10 / its portion structure 10b formed of at least one conductive material.

[0029] Figure 2 A schematic diagram of a second embodiment of the micromechanical component is shown.

[0030] Figure 2 The micromechanical component schematically shown in the diagram differs from the aforementioned embodiments in that the minimum width b of at least one insulating region 16 is... 16 The thickness is less than or equal to twice the thickness of the insulating layer 18 formed of at least one electrically insulating material. Therefore, at least one insulating region 16 is (completely) formed of at least one electrically insulating material of the insulating layer 18, wherein at least one electrically insulating material of the insulating layer 18 is additionally deposited on at least a portion of the surface of the opposing surface 10c of the first electrode structure 10. By means of an (optional) CMP step performed after the deposition of the insulating layer 18, the surface of the insulating layer 18 can be planarized, and the desired layer thickness of the insulating layer 18 can be adjusted on the opposing surface 10c of the first electrode structure 10.

[0031] The insulating layer 18 covers at least one portion of the surface of the opposing surface 10c with at least one electrically insulating material, and possibly also at least one remaining surface of the opposing surface 10c exposed to the insulating layer 18, may optionally be covered with at least one electrically insulating material and / or a conductive material of the core structure 20. Figure 2In this embodiment, at least one stop structure 14 is therefore also "anchored" to the opposing surface 10c of the first electrode structure 10. Therefore, in Figure 2 In this embodiment, at least one stop structure 14 also has good stability.

[0032] about Figure 2 Other features and advantages of micromechanical components can be found in [reference needed]. Figure 1 The aforementioned implementation methods.

[0033] Figures 3a to 3c A schematic cross-sectional view is shown to illustrate a first embodiment of a method for manufacturing micromechanical components.

[0034] When performing the manufacturing method described herein, the first electrode structure 10 and the second electrode structure 12 are arranged relative to each other such that the electrode surface 10a of the first electrode structure 10 is parallel to and opposite to the second electrode structure 12. Figures 3a to 3c In the example, a second electrode structure 12 is first formed for this purpose. Specifically, the second electrode structure 12 is disposed on a substrate (not shown) and / or on at least one intermediate layer covering the substrate (not shown). The second electrode structure 12 may be made of at least one conductive material, such as at least one semiconductor material, at least one metal, at least one metal silicide, at least one metal nitride, at least one metal carbide, and / or at least one metal oxide, such as ITO. Preferably, the second electrode structure 12 is formed of (doped) polysilicon, for example, in a manner that the second electrode structure 12 is structured from a (previously or subsequently doped) polysilicon layer.

[0035] Next, at least one sacrificial material layer 30 is deposited on the side of the second electrode structure 12 that is subsequently oriented toward the first electrode structure 10. The sacrificial material layer 30 may be, for example, silicon dioxide.

[0036] Subsequently, at least one conductive material of the subsequent first electrode structure 10 is deposited on the sacrificial material layer 30. As the at least one conductive material of the subsequent first electrode structure 10, for example, at least one semiconductor material, at least one metal, at least one metal silicide, at least one metal nitride, at least one metal carbide, and / or at least one metal oxide, such as ITO, can be deposited. Preferably, the first electrode structure 10 is formed of (doped) polysilicon, for example, by structuring the first electrode structure 30 on the sacrificial material layer 30 from a (previously or subsequently doped) deposited polysilicon layer.

[0037] In the manufacturing method described herein, at least one stop structure 14 protruding from the electrode surface 10a toward the second electrode structure 12 is constructed on the first electrode structure 10 such that charge transfer between the first electrode structure 10 and the second electrode structure 12 is prohibited when the at least one stop structure 14 is in mechanical contact with the second electrode structure 12. Therefore, only a portion 10b of the subsequent first electrode structure 10 is entirely formed of at least one conductive material, in such a way that the portion 10b of the subsequent first electrode structure 10 is structured by means of at least one groove 32 through the at least one conductive material of the subsequent first electrode structure 10. In this way, the electrode surface 10a of the first electrode structure 10 and the opposing surface 10c of the first electrode structure 10 pointing away from the electrode surface 10a are constructed as the outer surface of the portion 10b and are formed of at least one conductive material.

[0038] At least one stop structure 14 is fabricated by structuring at least one groove 32 using an etching process that proceeds from the opposing surface 10c of the first electrode structure 10, away from the electrode surface 10a, toward the sacrificial material layer 30. As will be clear from the following description, the position and shape of at least one subsequent stop structure 14 are determined by the at least one groove 32. The at least one groove 32 is configured such that it extends accordingly into the sacrificial material layer 30. The structuring depth / etching depth of the at least one groove 32 in the sacrificial material layer 30 correspondingly determines the subsequent height h of the at least one stop structure 14. Figure 3a A schematic cross-sectional view is shown after at least one groove 32 has been structured through at least one conductive material of the subsequent first electrode structure 10 into the sacrificial material layer 30.

[0039] Figure 3b The diagram illustrates the construction of at least one insulating region formed of at least one electrically insulating material on a first electrode structure 10 for constructing at least one stop structure 14. At least one insulating region 16 is constructed on the first electrode structure 10 by depositing at least one electrically insulating material in at least one groove 32. As the at least one electrically insulating material, for example, silicon nitride, silicon dioxide, silicon oxynitride, silicon carbide, undoped silicon and / or undoped germanium, germanium oxide, germanium nitride, germanium oxynitride, germanium carbide, aluminum oxide, and / or another metal oxide can be deposited. By completely filling at least one groove 32 with at least one electrically insulating material, it can be ensured that at least one insulating region 16 extends at least from the electrode surface 10a to at least the opposing surface 10c of the first electrode structure 10. Furthermore, in this way, at least one stop structure 14 is constructed as a protrusion 16a of each of the at least one insulating region 16 projecting onto the electrode surface 10 in the direction of the second electrode structure 12.

[0040] like Figure 3b As shown, the minimum width of at least one groove 32 oriented parallel to the electrode surface 10a of the first electrode structure 10 correspondingly determines the minimum width b of at least one insulating region 16 oriented parallel to the electrode surface 10a. 16 .exist Figures 3a to 3c In the implementation of at least one stop structure 14, the minimum width b 16 The thickness is greater than twice that of the insulating layer 18. Therefore, it is suitable to first deposit an insulating layer 18 formed of at least one electrically insulating material in at least one groove 32 and on at least a portion of the surface of the opposing surface 10a of the first electrode structure 10a, wherein the thickness d of the insulating layer 18 perpendicular to the orientation of the electrode surface 10a is greater than twice the thickness of the insulating layer 18. 18 Less than minimum width b 16 .

[0041] After the insulating layer 18 is introduced / deposited into at least one groove 32, the remaining volume of the at least one groove 32 not occupied by the insulating layer 18 is filled with at least one electrically insulating and / or conductive material of the core structure 20, wherein, additionally, at least one electrically insulating material of the insulating layer 18 covering at least a portion of the surface of the opposing surface 10c, and possibly the remaining surface of the opposing surface 10c exposed to the insulating layer 18, is covered with at least one electrically insulating and / or conductive material of the core structure 20. Optionally, the at least one electrically insulating and / or conductive material of the core structure 20 may then be planarized by means of a chemical mechanical polishing step. This result in Figure 3b As shown in the image.

[0042] Figure 3c The finished micromechanical component after at least partial removal of the sacrificial material layer 30 is shown. If the sacrificial material layer 30 is composed of silicon oxide, it can be at least partially removed, for example, by means of an etching process, such as, particularly by means of a wet chemical or gaseous etching process containing hydrofluoric acid (HF). To prevent undesirable etching of at least one stop structure 14, an etch-resistant material relative to the etching medium used for at least partial removal of the sacrificial material layer 30 can be used as at least one electrically insulating material for the insulating layer 18. The insulating layer 18 can be formed, for example, of silicon-rich silicon nitride, which has high etch resistance relative to wet chemical or gaseous etching processes containing hydrofluoric acid. For the core structure 20, silicon dioxide and / or silicon are preferably used as at least one electrically insulating and / or conductive material.

[0043] It should also be noted that, when performing the manufacturing method described herein, the first electrode structure 10 and / or the second electrode structure 12 are arranged / constructed in an adjustable and / or warped manner such that (at least after partial removal of the sacrificial material layer 30) the distance between the electrode surface 10a of the first electrode structure 10 and the second electrode structure 12 is variable. However, since the processes for adjusting the arrangement of at least one of the electrode structures 10 and 12 and for warping the at least one of the electrode structures 10 and 12 are known in the prior art, they will not be discussed in more detail here.

[0044] Figures 4a to 4c A schematic cross-sectional view is shown to explain a second embodiment of the manufacturing method.

[0045] Figure 4a A schematic cross-sectional view is shown after at least one groove 32 has been structured by a layer structure 32 formed of at least one conductive material of a second electrode structure 12, a sacrificial material layer 30, and subsequently a first electrode structure 10. This is to create... Figure 4a The method steps for performing the intermediate products shown above are referred to above. Figure 3a Explained.

[0046] In the use of Figures 4a to 4c In the schematically illustrated manufacturing method, at least one insulating region 16 is formed from at least one electrically insulating material, the minimum width of which is b. 16 Less than or equal to twice the thickness d of the insulation layer 18 18 Therefore, at least one groove 32 is first completely filled with at least one electrically insulating material of the insulating layer 18, which is additionally deposited on at least a portion of the surface of the opposing surface 10c of the first electrode structure 10. Then, at least one electrically insulating material and / or conductive material of the core structure 20 is deposited such that at least one electrically insulating material covering at least a portion of the surface of the opposing surface 10c, and possibly at least one remaining surface of the opposing surface 10c exposed to the insulating layer 18, is covered with the electrically insulating material and / or conductive material of the core structure 20.

[0047] Figure 4c The finished micromechanical component is shown after at least partial removal of the sacrificial material layer 30. In order to avoid etching action on the stop structure 14 during at least partial removal of the sacrificial material layer 30, silicon-rich silicon nitride is preferably used as at least one electrically insulating material of the insulating layer 18, and silicon dioxide and / or silicon is preferably used as at least one electrically insulating and / or conductive material of the core structure 20.

[0048] The at least one insulating region 16 may also be completely filled with the insulating layer 18 and have a width b. 16Its thickness d in the insulating layer 18 formed of the at least one electrically insulating material 18 Greater than the height h of at least one stop structure 14 plus the surface distance Δ between the electrode surface 10a and the opposing surface 10c of the first electrode structure 10. 10a-10c The total thickness of the resulting layer is greater than twice the thickness of the insulating layer 18. An optional CMP step performed after the deposition of the insulating layer 18 can be used to planarize the surface of the deposited insulating layer 18 and to adjust the desired layer thickness of the insulating layer 18 on the opposing surface 10c of the first electrode structure 10.

[0049] about Figures 4a to 4c Other steps in the manufacturing method are referenced in the following section. Figures 3a to 3c Description of the implementation method.

[0050] Figures 5a to 5c A schematic cross-sectional view is shown to explain a third embodiment of the manufacturing method.

[0051] Also using Figures 5a to 5c In the schematic reproduction of the manufacturing method, a second electrode structure 12 is first formed. Next, at least a sacrificial material layer 30 is deposited on the side of the second electrode structure 12 that is subsequently oriented towards the first electrode structure 10. Then, as shown in the figure... Figure 5a The diagram schematically reproduces that at least one recess 40 is structured in the sacrificial material layer 30, wherein the maximum depth of the at least one recess 40 is less than the minimum layer thickness of the sacrificial material layer 30. Also in the manufacturing method described herein, the position and shape of the at least one recess 40 determine the corresponding subsequent position and corresponding subsequent shape of the at least one stop structure 14. Similarly, the maximum depth of the at least one recess 40 correspondingly determines the subsequent height h of the at least one stop structure 14.

[0052] As in Figure 5b As shown, at least one conductive material of the subsequent first electrode structure 10 is then deposited on the sacrificial material layer 30, thereby forming at least one stop structure 14 by filling at least one recess 40 with at least one conductive material of the subsequent first electrode structure 10. However, the manufacturing method described herein also ensures that charge transfer between the first electrode structure 10 and the second electrode structure 12 is prohibited even when the at least one stop structure 14 is in mechanical contact with the second electrode structure 12.

[0053] Therefore, in the subsequent method steps, at least one separation trench 42 extending to the sacrificial material layer 30 is structured from at least one conductive material of the subsequent first electrode structure 10, such that at least one partial volume 14, formed from at least one conductive material of the subsequent first electrode structure 10 and having at least one stop structure 14, is correspondingly framed by at least one separation trench 42. The structuring of at least one separation trench 42 can be performed by means of an etching process, which extends from the opposing surface 10c, pointing from the principle electrode surface 10a of the first electrode structure 10, toward the sacrificial material layer 30.

[0054] In another method step, at least one insulating region 16 is constructed on the first electrode structure 10 by depositing at least one electrically insulating material in at least one separation trench 42. By completely filling at least one separation trench 42, it can be ensured that at least one insulating region 16, correspondingly extending at least from the electrode surface 10a to at least the opposing surface 10c, is configured such that at least one stop structure 14 is correspondingly (completely) framed by at least one insulating region 16. Also for the purpose of performing... Figures 5a to 5c The illustrative reproduction of the manufacturing method, for example, uses silicon nitride, silicon dioxide, silicon oxynitride, silicon carbide, undoped silicon and / or undoped germanium, germanium oxide, germanium nitride, germanium oxide, germanium oxynitride, germanium carbide, aluminum oxide and / or another metal oxide as at least one electrical insulating material.

[0055] Optionally, in Figures 5a to 5c In the manufacturing method, at least one electrically insulating material of the insulating layer 18 may first be deposited in at least one separation trench 42 and on at least a portion of the surface of the opposing surface 10c of the first electrode structure 10. Next, the remaining volume of the at least one separation trench 42 may be correspondingly filled with at least one electrically insulating and / or conductive material of the core structure 20, wherein at least one electrically insulating material additionally covering at least a portion of the surface of the opposing surface 10c, and possibly at least one remaining surface of the opposing surface exposed to the insulating layer 18, is covered with at least one electrically insulating and / or conductive material of the core structure 20. (However, in an alternative embodiment, the insulating region 16 may also be completely / only filled with the insulating layer 18.)

[0056] Figure 5c The finished micromechanical component after at least partial removal of the sacrificial material layer 30 is shown. To prevent etching from acting on the stop structure 14 during at least partial removal of the sacrificial material layer 30, [further details are needed]. Figures 5a to 5c The manufacturing method preferably uses silicon-rich silicon nitride as at least one electrical insulating material for the insulating layer 18, and / or preferably uses silicon as at least one electrical insulating material and / or conductive material for the core structure 20.

[0057] about Figures 5a to 5c For other steps in the manufacturing method, see the section on Figures 3a to 3c Description of the implementation method.

[0058] because Figure 5c The fabrication of a micromechanical component having at least one insulating region 16 correspondingly framing at least one stop structure 14 (this insulating region electrically insulates the corresponding stop structure 14 from the remainder of the first electrode structure 10 / its partial structure 10b) allows the at least one stop structure 14 to be made of at least one material having relatively high electrical conductivity. Since the at least one stop structure 14 is correspondingly framed by at least one insulating region 16, a spring-loaded stop for the second electrode structure 10 is also achieved on the at least one stop structure 14. The design of at least one separation groove 42 and the material properties of at least one electrically insulating material are selected to ensure the desired spring-loaded stop of the second electrode structure 12 on the at least one stop structure 14.

[0059] All of the aforementioned micromechanical components and those manufactured using the aforementioned manufacturing methods can be used in sensor devices or microphone devices. Such sensor devices can be understood, for example, as inertial sensors or capacitive pressure sensors. Optionally, in all the micromechanical components described above and those manufactured using the aforementioned manufacturing methods, the first electrode structure 10 or the second electrode structure 12 can be configured as an adjustable or deformable electrode structure, for example, particularly as a warpable diaphragm, while the other electrode structure of the two electrode structures 10 and 12 can be implemented as a "fixed-position counter electrode" or can also be implemented as an adjustable or deformable electrode structure.

[0060] It is explicitly stated herein that at least one stop structure 14 and mechanical contact surface need not be constructed on or within the area of ​​the first electrode structure 10 and / or the second electrode structure 12 that is actually used as an electrode. Rather, at least one stop structure 14 and / or mechanical contact surface may also be arranged electrically insulated from the area of ​​the first electrode structure 10 and / or the second electrode structure 12 that is actually used as an electrode. Accordingly, at least one stop structure 14 and / or mechanical contact surface may also be constructed outside the area of ​​the first electrode structure 10 and / or the second electrode structure 12 that is actually used as an electrode.

Claims

1. A micromechanical component for a sensor device or microphone device, comprising: A first electrode structure (10) and a second electrode structure (12) are arranged relative to each other such that the electrode surface (10a) of the first electrode structure (10) is oriented toward the second electrode structure (12); in, The first electrode structure (10) and / or the second electrode structure (12) are adjustable and / or warp, so that the distance between the electrode surface (10a) of the first electrode structure (10) and the second electrode structure (12) is variable; Wherein, at least one partial structure (10b) of the first electrode structure (10) is formed entirely of at least one conductive material, and the electrode surface (10a) of the first electrode structure (10) and the opposing surface (10c) of the first electrode structure (10) pointing away from the electrode surface (10a) are the outer surfaces of the partial structure (10b) and are formed of the at least one conductive material. Furthermore, at least one stop structure (14) is constructed on the first electrode structure (10) protruding toward the second electrode structure (12) on the electrode surface (10a), such that when the at least one stop structure (14) is in mechanical contact with the second electrode structure (12), charge transfer between the first electrode structure (10) and the second electrode structure (12) is prohibited; The first electrode structure (10) includes at least one insulating region (16) formed of at least one electrically insulating material, the insulating region correspondingly extending at least from the electrode surface (10a) to the opposing surface (10c) of the first electrode structure (10), wherein the at least one stop structure (14) is correspondingly framed by the at least one insulating region (16). The at least one insulating region (16) is correspondingly shaped such that the corresponding insulating region (16) at least partially surrounds a core structure (20) formed of at least one electrically insulating material and / or conductive material, such that the core structure (20) functions as an etch stop layer and / or a printed conductor layer.

2. The micromechanical component according to claim 1, wherein, The at least one insulating region (16) is entirely formed of the at least one electrical insulating material, which accordingly has a density of less than 10. -8 Conductivity in S / cm and greater than 10 8 Resistivity in Ω·cm.

3. The micromechanical component according to claim 1 or 2, wherein, The at least one insulating region (16) is formed at least in part by silicon nitride, silicon dioxide, silicon oxynitride, silicon carbide, undoped silicon and / or undoped germanium, germanium oxide, germanium nitride, germanium oxynitride, germanium carbide, aluminum oxide and / or another metal oxide as an electrical insulating material.

4. A method for manufacturing a micromechanical component for a sensor device or microphone device, comprising the following steps: The first electrode structure (10) and the second electrode structure (12) are arranged relative to each other such that the electrode surface (10a) of the first electrode structure (10) is oriented toward the second electrode structure (12), and the first electrode structure (10) and / or the second electrode structure (12) are adjustable and / or warpable, so that the distance between the electrode surface (10a) of the first electrode structure (10) and the second electrode structure (12) is variable. in, At least one partial structure (10b) of the first electrode structure (10) is entirely formed of at least one conductive material, and the electrode surface (10a) of the first electrode structure (10) and the opposing surface (10c) of the first electrode structure (10) pointing away from the electrode surface (10a) are constructed as the outer surface of the partial structure (10b) and are also constructed of the at least one conductive material. Furthermore, at least one stop structure (14) protruding from the electrode surface (10a) toward the second electrode structure (12) is constructed on the first electrode structure (10) such that when the at least one stop structure (14) is in mechanical contact with the second electrode structure (12), charge transfer between the first electrode structure (10) and the second electrode structure (12) is prohibited. The first electrode structure (10) is configured with at least one insulating region (16) formed of at least one electrically insulating material, the insulating region correspondingly extending at least from the electrode surface (10a) to the opposite surface (10c) of the first electrode structure (10), wherein the at least one stop structure (14) is correspondingly framed by the at least one insulating region (16). The at least one insulating region (16) is correspondingly shaped such that the corresponding insulating region (16) at least partially surrounds at least one core structure (20) formed of at least one electrically insulating material and / or conductive material, such that the at least one core structure (20) functions as an etch stop layer and / or a printed conductor layer.

5. The manufacturing method according to claim 4, wherein, Perform the following sub-steps: The second electrode structure (12) is formed. At least one sacrificial material layer (30) is deposited on the side of the second electrode structure (12) that is later oriented toward the first electrode structure (10). At least one conductive material of the subsequent first electrode structure (10) is deposited on the sacrificial material layer (30); At least one groove (32) is structured by the at least one conductive material of the subsequent first electrode structure (10), the groove extending accordingly into the sacrificial material layer (30); and By depositing the at least one electrically insulating material in the at least one groove (32), the at least one stop structure (14) and the at least one insulating region (16) are constructed on the first electrode structure (10), whereby the at least one stop structure (14) is constructed as a protrusion (16a) of the at least one insulating region (16) protruding toward the second electrode structure (12) on the electrode surface (10a).

6. The manufacturing method according to claim 5, wherein, First, at least one electrically insulating material of the at least one stop structure (14) and the at least one insulating region (16) is deposited in the at least one groove (32) and on at least one portion of the opposite surface (10c) of the first electrode structure (10). Then, the remaining volume of the at least one groove (32) is correspondingly filled with at least one electrically insulating material and / or conductive material of the at least one core structure (20), wherein the at least one electrically insulating material of the at least one stop structure (14) and the at least one insulating region (16) covering at least one portion of the opposite surface (10c) is additionally covered with at least one second electrically insulating material and / or conductive material of the at least one core structure (20).

7. The manufacturing method according to claim 5, wherein, The at least one groove (32) is first completely filled with at least one electrically insulating material of the at least one stop structure (14) and the at least one insulating region (16), the electrically insulating material being additionally deposited on at least a portion of the opposing surface (10c) of the first electrode structure (10), and then at least one electrically insulating material and / or conductive material is deposited such that the at least one electrically insulating material of the at least one stop structure (14) and the at least one insulating region (16) covering at least a portion of the opposing surface (10c) is covered with at least one second electrically insulating material and / or conductive material.

8. The manufacturing method according to claim 4, wherein, Perform the following sub-steps: The second electrode structure (12) is formed. At least one sacrificial material layer (30) is deposited on the side of the second electrode structure (12) that is later oriented toward the first electrode structure (10). At least one recess (40) is structured in the sacrificial material layer (30). At least one conductive material of the subsequent first electrode structure (10) is deposited on the sacrificial material layer (30), thereby forming the at least one stop structure (14) by filling the at least one recess (40) with the at least one conductive material of the subsequent first electrode structure (10). By structuring at least one separation trench (42) extending correspondingly to the sacrificial material layer (30) by at least one conductive material of the subsequent first electrode structure (10), at least one partial volume (44) of the at least one stop structure (14) formed by at least one conductive material of the subsequent first electrode structure (10) is correspondingly completely enclosed by the at least one separation trench (42). and The at least one insulating region (16) is constructed on the first electrode structure (10) by depositing the at least one electrically insulating material in the at least one separation trench (42).

9. The manufacturing method according to claim 8, wherein, In the at least one separation trench (42) and on at least a portion of the opposite surface (10c) of the first electrode structure (10), at least one electrically insulating material of the at least one insulating region (16) is first deposited, and then the remaining volume of the at least one separation trench (42) is filled with at least one electrically insulating material and / or conductive material of at least one core structure (20), wherein the at least one electrically insulating material of the at least one insulating region (16) covering at least a portion of the opposite surface (10c) is covered with the at least one electrically insulating material and / or conductive material of the at least one core structure (20).

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