Wafer level cavity down package structure and method of manufacturing the same
By using Kovar alloy to form a wafer-level cavity packaging structure, the problems of complex processing, high cost and fragility are solved, and more stable packaging and better heat dissipation performance are achieved.
CN116281844BActive Publication Date: 2026-06-12SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
- Filing Date
- 2023-03-28
- Publication Date
- 2026-06-12
AI Technical Summary
⚠Technical Problem
Existing wafer-level cavity packaging structures are complex to manufacture, costly, fragile, and have poor heat dissipation.
⚗Method used
Kovar alloy is used as the cover wafer, and a blind cavity is formed by machining or wet etching. It is then bonded to the chip wafer to form a vacuum cavity, eliminating the need to prepare a bonding metal layer on the cover wafer. The conductivity and mechanical strength of Kovar alloy are used to improve the stability and heat dissipation performance of the packaging structure.
🎯Benefits of technology
It simplifies the process, reduces costs, improves product yield, and enhances the electromagnetic shielding and heat dissipation effects of the packaging structure.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN116281844B_ABST
Abstract
The application provides a wafer-level cavity packaging structure and a preparation method thereof. The preparation method comprises the following steps: providing a Kovar alloy wafer, and thinning the Kovar alloy wafer to a preset thickness; forming at least one blind cavity extending along the thickness direction of the thinned Kovar alloy wafer on the surface of the thinned Kovar alloy wafer, and forming a Kovar alloy wall between two adjacent blind cavities; providing a chip wafer with a bonding metal layer formed on the surface of the chip wafer, and bonding the bonding metal layer and the Kovar alloy wall, so that a vacuum cavity is formed between the blind cavity and the chip wafer, and a chip is arranged on the chip wafer in the vacuum cavity. The Kovar alloy material is used as a cover wafer, blind cavities can be directly etched, the process of preparing a bonding metal layer on the cover wafer is avoided, the process is simple, the cost is low, the shielding performance and the heat dissipation of the product can be obviously improved, and the yield of the product is improved.
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