Light emitting substrate, method of manufacturing the same and light emitting device

Abstract

A light-emitting substrate (1) includes: a substrate (11); and a plurality of light-emitting devices (13) disposed on the substrate (11), each light-emitting device (13) including: a first electrode (131), a second electrode (132), and a light-emitting pattern (133a) disposed between the first electrode (131) and the second electrode (132), wherein the first electrode (131) is closer to the substrate (11) than the second electrode (132); the plurality of light-emitting devices (13) includes at least one first light-emitting device (13A), and the at least one first light-emitting device (13A) further includes: a first material layer (134), the first material layer (134) being disposed on the substrate (11). A first light-emitting device (13A) includes a light-emitting pattern (133a) on the side close to the substrate (11); wherein the material of the light-emitting pattern (133a) included in at least one first light-emitting device (13A) includes: a first light-emitting material; the material of the first material layer (134) includes: a first material (C1), the first material (C1) being capable of generating a second material (C2) under light radiation in a first wavelength band, or the first material (C1) being generated under light radiation in a second wavelength band by a third material (C3), the first material (C1) and the first light-emitting material having different solubilities in the same solvent as the second material (C2) or the third material (C3).

Description

Technical Field

[0001] This disclosure relates to the fields of lighting and display technology, and in particular to a light-emitting substrate, a method for preparing the substrate, and a light-emitting device. Background Technology

[0002] Compared to organic light-emitting materials, quantum dots have advantages such as high purity of emission color and tunable emission wavelength. In addition, quantum dots have excellent photochemical stability and thermal stability. Therefore, quantum dot light-emitting diodes using quantum dots as light-emitting materials are widely used in the display field. Summary of the Invention

[0003] On one hand, a light-emitting substrate is provided, comprising: a substrate; and a plurality of light-emitting devices disposed on the substrate, each light-emitting device comprising: a first electrode, a second electrode, and a light-emitting pattern disposed between the first electrode and the second electrode, wherein the first electrode is closer to the substrate than the second electrode; the plurality of light-emitting devices includes at least one first light-emitting device, the at least one first light-emitting device further comprising: a first material layer disposed on the side of the light-emitting pattern included in the at least one first light-emitting device near the substrate, and in contact with the light-emitting pattern included in the at least one first light-emitting device; wherein the material of the light-emitting pattern included in the at least one first light-emitting device comprises: a first light-emitting material; the material of the first material layer comprises: a first material, wherein the first material is capable of generating a second material under light radiation in a first wavelength band, and the first material and the first light-emitting material have different solubilities in the same solvent as the second material, or, the first material is generated by a third material under light radiation in a second wavelength band, and the first material and the first light-emitting material have different solubilities in the same solvent as the third material.

[0004] In some embodiments, the electron mobility of the first material is 1×10⁻⁶. -4 cm 2 / V·s~2×10 -3 cm 2 / V·s, and the absolute value of the LUMO energy level of the first material is 3.6eV~4.2eV; or, the hole mobility of the first material is 1×10 -4 cm 2 / V·s~2×10 -3 cm 2 / V·s, and the absolute value of the HOMO energy level of the first material is 5.1eV~6.2eV.

[0005] In some embodiments, the at least one first light-emitting device further includes: a carrier transport layer disposed on the side of the first material layer near the substrate and in contact with the first material layer; or, the first material layer serves as the carrier transport layer and is in direct contact with the first electrode.

[0006] In some embodiments, when the at least one first light-emitting device further includes a carrier transport layer, the thickness of the first material layer is less than the thickness of the carrier transport layer; when the first material layer serves as the carrier transport layer, the thickness of the first material layer is 50 nm to 70 nm.

[0007] In some embodiments, where the at least one first light-emitting device further includes a carrier transport layer and the material of the first material layer has carrier transport function, the thickness of the first material layer is 5nm~20nm and the thickness of the carrier transport layer is 50nm~70nm.

[0008] In some embodiments, both the first material and the first luminescent material comprise: metal nano-ions and ligands bound to the metal nano-ions; wherein the ligands contained in the first material and the ligands contained in the first luminescent material may be the same or different, and when the ligands contained in the first material and the ligands contained in the first luminescent material are the same, the ligands contained in the third material are photosensitive ligands; when the ligands contained in the first material and the ligands contained in the first luminescent material are different, the ligands contained in the first luminescent material are non-photosensitive ligands, and the non-photosensitive ligands have different solubilities in the same solvent as the second material, or the non-photosensitive ligands have different solubilities in the same solvent as the third material.

[0009] In some embodiments, the photosensitive ligand includes a ligand capable of undergoing a decomposition or cross-linking reaction under light irradiation.

[0010] In some embodiments, the photosensitive ligand comprises either 2-(Boc-amino)ethanethiol or MMES.

[0011] In some embodiments, where the at least one first light-emitting device further includes a carrier transport layer, the material of the carrier transport layer includes metal nano-ions and ligands bound to the metal nano-ions, wherein the metal nano-ions contained in the material of the carrier transport layer are the same as or different from the metal nano-ions contained in the first material, and the ligands contained in the material of the carrier transport layer are different from the ligands contained in the first material.

[0012] In some embodiments, the plurality of light-emitting devices further includes: at least one second light-emitting device; the at least one second light-emitting device further includes: a second material layer, the second material layer being disposed on the side of the light-emitting pattern included in the at least one second light-emitting device near the substrate and in contact with the light-emitting pattern included in the at least one second light-emitting device; wherein, the material of the light-emitting pattern included in the at least one second light-emitting device includes a second light-emitting material, and the material of the second material layer includes: a fourth material, the fourth material being capable of generating a fifth material under light radiation in a third wavelength band, the fourth material and the second light-emitting material having different solubilities in the same solvent as the fifth material, or, the fourth material being generated by a sixth material under light radiation in a fourth wavelength band, the fourth material and the second light-emitting material having different solubilities in the same solvent as the sixth material.

[0013] In some embodiments, the at least one second light-emitting device further includes: a third material layer disposed on the side of the second material layer near the substrate and in the same layer as the first material layer; the thickness of the third material layer is less than the thickness of the first material layer.

[0014] In some embodiments, the at least one first light-emitting device further includes: a fourth material layer, the fourth material layer being disposed on the side of the light-emitting pattern included in the at least one first light-emitting device away from the substrate and in contact with the light-emitting pattern included in the at least one first light-emitting device; the thickness of the fourth material layer is less than the thickness of the second material layer.

[0015] In some embodiments, the plurality of light-emitting devices further includes: at least one third light-emitting device; the at least one third light-emitting device further includes: a fifth material layer, the fifth material layer being disposed on the side of the light-emitting pattern included in the at least one third light-emitting device close to the substrate and in contact with the light-emitting pattern included in the at least one third light-emitting device; the material of the light-emitting pattern included in the at least one third light-emitting device includes: a third light-emitting material; the material of the fifth material layer includes: a seventh material, the seventh material being capable of generating an eighth material under light radiation in a fifth wavelength band, the seventh material and the third light-emitting material having different solubilities in the same solvent, or, the seventh material being generated by a ninth material under light radiation in a sixth wavelength band, the seventh material and the third light-emitting material having different solubilities in the same solvent.

[0016] In some embodiments, the at least one third light-emitting device further includes: a sixth material layer, the sixth material layer being disposed on the side of the fifth material layer near the substrate and being in the same layer as the first material layer; the thickness of the sixth material layer is less than the thickness of the seventh material layer.

[0017] In some embodiments, where the plurality of light-emitting devices includes at least one second light-emitting device, and the second light-emitting device further includes a second material layer, the at least one third light-emitting device further includes: a seventh material layer, the seventh material layer being disposed on the side of the fifth material layer near the substrate and being in the same layer as the second material layer; the thickness of the seventh material layer is less than the thickness of the second material layer.

[0018] In some embodiments, the at least one first light-emitting device further includes: an eighth material layer, the eighth material layer being disposed on the side of the first light-emitting pattern away from the substrate and being in the same layer as the fifth material layer; the thickness of the eighth material layer is less than the thickness of the fifth material layer.

[0019] In some embodiments, the at least one second light-emitting device further includes: a ninth material layer, the ninth material layer being disposed on the side of the light-emitting pattern included in the at least one second light-emitting device away from the substrate, and being in the same layer as the fifth material layer; the thickness of the ninth material layer is less than the thickness of the fifth material layer.

[0020] In some embodiments, for light-emitting devices of different colors, when the material layers in contact with the light-emitting patterns contained in each light-emitting device and located on the side of the light-emitting patterns contained in each light-emitting device closer to the substrate all include metal nano-ions and ligands bound to the metal nano-ions, the metal nano-ions contained in each material layer are the same, and at least one material layer contains metal nano-ions doped with other metals.

[0021] In some embodiments, the metal nano-ions contained in each material layer are all zinc oxide, and at least one material layer contains metal nano-ions that are also doped with magnesium.

[0022] In some embodiments, the metal nano-ions contained in each material layer are all doped with magnesium, and the amount of magnesium doped in the metal nano-ions contained in each material layer is different.

[0023] On the other hand, a light-emitting device is provided, comprising: a light-emitting substrate as described above.

[0024] On another front, a method for preparing a light-emitting substrate is provided, comprising:

[0025] Multiple light-emitting devices are formed on a substrate. Each light-emitting device includes a first electrode, a second electrode, and a light-emitting pattern formed between the first electrode and the second electrode, wherein the first electrode is closer to the substrate than the second electrode. The multiple light-emitting devices include at least one first light-emitting device, which further includes a first material layer formed on the side of the light-emitting pattern included in the at least one first light-emitting device that is close to the substrate and in contact with the light-emitting pattern included in the at least one first light-emitting device. The material of the light-emitting pattern included in the at least one first light-emitting device includes a first light-emitting material. The material of the first material layer includes a first material that can generate a second material under light radiation in a first wavelength band. The first material and the first light-emitting material have different solubilities in the same solvent as the second material. Alternatively, the first material is generated by a third material under light radiation in a second wavelength band, and the first material and the first light-emitting material have different solubilities in the same solvent as the third material.

[0026] In some embodiments, the first material is generated by the third material under light radiation in the second wavelength band, and the solubility of the first material and the first light-emitting material in the first solvent is less than the solubility of the third material in the first solvent; forming the at least one first light-emitting device includes:

[0027] A first thin film and a second thin film are sequentially formed on a substrate. The material of the first thin film includes the third material, and the material of the second thin film includes the first luminescent material. Alternatively, the material of the second thin film includes a tenth material, which is capable of generating the first luminescent material under light radiation in the second wavelength band.

[0028] The first thin film and the portion of the second thin film located in the first region are irradiated with light of the second band, so that the portion of the first thin film located in the first region generates the first material, wherein the first region is the region where at least one first light-emitting device is located.

[0029] The first solvent is used to dissolve the portion of the first film located in the second region, thereby removing the portion of the first film located in the second region, and the portion of the second film located in the second region is also removed, to obtain the first material layer and the light-emitting pattern contained in the at least one first light-emitting device. The second region is the remaining region among the plurality of light-emitting devices other than the region where the at least one first light-emitting device is located.

[0030] In some embodiments, both the first material and the first luminescent material include: metal nano-ions and ligands bound to the metal nano-ions; wherein the ligands contained in the first material and the ligands contained in the first luminescent material may be the same or different, and if the ligands contained in the first material and the ligands contained in the first luminescent material are different, the ligands contained in the first luminescent material are insoluble in the first solvent.

[0031] In some embodiments, when the ligands contained in the first material are the same as those contained in the first luminescent material, the first luminescent material is generated by the tenth material under light radiation in the second wavelength band, and both the ligands contained in the third material and the ligands contained in the tenth material are photosensitive ligands; when the ligands contained in the first material are different from those contained in the first luminescent material, the ligands contained in the third material are photosensitive ligands, and the material of the second thin film includes the first luminescent material.

[0032] In some embodiments, the photosensitive ligand includes a ligand capable of undergoing a decomposition or cross-linking reaction under radiation in the second wavelength band.

[0033] In some embodiments, the photosensitive ligand comprises either 2-(Boc-amino)ethanethiol or MMES.

[0034] In some embodiments, the plurality of light-emitting devices further includes at least one second light-emitting device, the at least one second light-emitting device further including: a second material layer, the second material layer being formed on the side of the light-emitting pattern included in the at least one second light-emitting device near the substrate and in contact with the light-emitting pattern included in the at least one second light-emitting device; wherein, the material of the light-emitting pattern included in the at least one second light-emitting device includes: a second light-emitting material; the material of the second material layer includes: a fourth material, the fourth material generating a fifth material under light radiation in a third wavelength band, the fourth material and the second light-emitting material having different solubilities in the same solvent as the fifth material, or, the fourth material being generated by a sixth material under light radiation in a fourth wavelength band, the fourth material and the second light-emitting material having different solubilities in the same solvent as the sixth material.

[0035] In some embodiments, the fourth material is generated by the sixth material under light radiation in a fourth wavelength band, and the solubility of the fourth material and the second light-emitting material in the second solvent is less than the solubility of the sixth material in the second solvent; forming the at least one second light-emitting device includes:

[0036] A third thin film and a fourth thin film are sequentially formed on a substrate containing a light-emitting pattern including the first material layer and the at least one first light-emitting device. The material of the third thin film includes the sixth material, and the material of the fourth thin film includes the second light-emitting material. Alternatively, the material of the fourth thin film includes an eleventh material, which is capable of generating the second light-emitting material under light radiation in the fourth wavelength band.

[0037] The third thin film and the portion of the fourth thin film located in the third region are irradiated with light of the fourth wavelength, so that the portion of the third thin film located in the third region generates the fourth material, wherein the third region is the region where at least one second light-emitting device is located.

[0038] The third film located in the fourth region is dissolved using the second solvent to remove the portion of the third film located in the fourth region, and the portion of the fourth film located in the fourth region is also removed to obtain the second material layer and the light-emitting pattern contained in the at least one second light-emitting device. The fourth region is the remaining region among the plurality of light-emitting devices other than the region where the at least one second light-emitting device is located. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments of this disclosure will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual flow of the method, the actual timing of the signals, etc. involved in the embodiments of this disclosure.

[0040] Figure 1 A cross-sectional view of a light-emitting substrate provided for related technologies;

[0041] Figure 2 This is a cross-sectional view of a light-emitting substrate according to some embodiments;

[0042] Figure 3 This is a top view of a light-emitting substrate according to some embodiments;

[0043] Figure 4 Here is an equivalent circuit diagram of a 3T1C according to some embodiments;

[0044] Figure 5A This is a cross-sectional view of a light-emitting substrate according to some embodiments;

[0045] Figure 5BThis is a flowchart of a method for preparing a first luminescent pattern according to some embodiments;

[0046] Figure 5C A flowchart of another method for preparing a first luminescent pattern according to some embodiments;

[0047] Figure 5D This is a cross-sectional view of another light-emitting substrate according to some embodiments;

[0048] Figure 5E This is a cross-sectional view of another light-emitting substrate according to some embodiments;

[0049] Figure 6A This is a flowchart illustrating the formation of a first material layer and a first light-emitting pattern according to some embodiments;

[0050] Figure 6B This is a flowchart illustrating the formation of a second material layer and a second light-emitting pattern according to some embodiments;

[0051] Figure 6C This is a flowchart illustrating the formation of a third material layer and a third light-emitting pattern according to some embodiments;

[0052] Figure 7 A comparison diagram of the ultraviolet absorption spectra of ZnO, ZnO / GQD-Boc / CCl3, ZnO / ZnO-Boc, and ZnO / ZnO-Boc / GQD-Boc / CCl3 according to some embodiments. Detailed Implementation

[0053] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0054] Unless the context otherwise requires, throughout the specification and claims, the term "comprise" and its other forms, such as the third-person singular "comprises" and the present participle "comprising," are interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0055] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0056] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0057] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0058] The use of “applies to” or “configured to” in this article implies an open and inclusive language that does not preclude applicability to or configuration to devices that perform additional tasks or steps.

[0059] In addition, the use of “based on” implies openness and inclusivity, because processes, steps, calculations or other actions “based on” one or more of the stated conditions or values ​​may in practice be based on additional conditions or values ​​beyond those stated.

[0060] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and regions is enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched regions shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the regions of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0061] Some embodiments of this disclosure provide a light-emitting device, which includes a light-emitting substrate and may also include other components, such as a circuit for providing electrical signals to the light-emitting substrate to drive the light-emitting substrate to emit light. This circuit may be called a control circuit and may include a circuit board and / or an integrated circuit (IC) electrically connected to the light-emitting substrate.

[0062] In some embodiments, the light-emitting device can be an illumination device, in which case the light-emitting device serves as a light source to achieve the illumination function. For example, the light-emitting device can be a backlight module in a liquid crystal display device, a lamp for internal or external illumination, or various signal lights, etc.

[0063] In other embodiments, the light-emitting device can be a display device, in which case the light-emitting substrate is a display substrate used to display images (i.e., screens). The light-emitting device can include a display or a product containing a display. The display can be a flat panel display (FPD), a microdisplay, etc. Based on whether the user can see the scene behind the display, the display can be a transparent display or an opaque display. Based on whether the display can be bent or rolled, the display can be a flexible display or a regular display (which can be called a rigid display). Examples of products containing displays include: computer monitors, televisions, billboards, laser printers with display functions, telephones, mobile phones, personal digital assistants (PDAs), laptops, digital cameras, portable camcorders, viewfinders, vehicles, large-area walls, theater screens, or stadium signs, etc.

[0064] Some embodiments of this disclosure provide a light-emitting substrate 1, such as... Figure 1 and Figure 2As shown, the light-emitting substrate 1 includes a substrate 11, a driving circuit layer DCL disposed on the substrate 11, a pixel defining layer 12, and a plurality of light-emitting devices 13. The pixel defining layer 12 has a plurality of openings Q, and the plurality of light-emitting devices 13 can be disposed one-to-one with the plurality of openings Q. Here, the plurality of light-emitting devices 13 can be all or some of the light-emitting devices 13 included in the light-emitting substrate 1; the plurality of openings Q can be all or some of the openings on the pixel defining layer 12.

[0065] In some embodiments, such as Figure 1 and Figure 2 As shown, each light-emitting device 13 includes: a first electrode 131, a second electrode 132, and a light-emitting functional layer 133 disposed between the first electrode 131 and the second electrode 132. The light-emitting functional layer 133 includes a light-emitting pattern 133a, wherein the first electrode 131 is closer to the substrate 11 than the second electrode 132.

[0066] In some embodiments, the substrate 11 may be an inorganic material, an organic material, a silicon wafer, or a composite material layer, etc.

[0067] Examples of inorganic materials include glass and metals; examples of organic materials include polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyethersulfone, or combinations thereof.

[0068] In some embodiments, the first electrode 131 can be an anode, in which case the second electrode 132 is a cathode. In other embodiments, the first electrode 131 can be a cathode, in which case the second electrode 132 is an anode.

[0069] The light-emitting principle of the light-emitting device 13 is as follows: through the circuit connecting the anode and the cathode, holes are injected into the light-emitting functional layer 133 by the anode and electrons are injected into the light-emitting functional layer 133 by the cathode. The electrons and holes formed form excitons in the light-emitting pattern 133a. The excitons return to the ground state through radiative transition and emit photons.

[0070] In some embodiments, the anode may include a conductor having a high work function, such as a metal, a conductive metal oxide, or a combination thereof. The metal may be nickel, platinum, vanadium, chromium, copper, zinc, or gold, or alloys thereof; the conductive metal oxide may be zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO), or fluorine-doped tin oxide; or, the combination of metal and conductive metal oxide may be ZnO and Al, or SnO2 and Sb, ITO / Ag / ITO, but is not limited thereto.

[0071] The cathode may include a conductor having a lower work function than the anode, such as a metal, a conductive metal oxide, and / or a conductive polymer. The cathode may include, for example, metals such as aluminum, magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, silver, tin, lead, cesium, barium, etc., or alloys thereof; multilayer structures such as LiF / Al, Li₂O / Al, Liq / Al, LiF / Ca, and BaF₂ / Ca; and conductive metal oxides such as zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO), or fluorine-doped tin oxide, but are not limited thereto.

[0072] The work function of the anode may be higher than that of the cathode. For example, the work function of the anode may be from about 4.5 eV to about 5.0 eV and the work function of the cathode may be from about 4.0 eV to about 4.7 eV. Within this range, the work function of the anode may be from about 4.6 eV to about 4.9 eV or from about 4.6 eV to about 4.8 eV, and the work function of the cathode may be from about 4.0 eV to about 4.6 eV or from about 4.3 eV to about 4.6 eV.

[0073] The first electrode 131 and the second electrode 132 can be a transmission electrode, a partially transmission and partially reflection electrode, or a reflection electrode. The transmission electrode or the partially transmission and partially reflection electrode can include: conductive oxides such as zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO), or fluorine-doped tin oxide, or a thin metal layer. The reflection electrode can include: a reflective metal, such as: an opaque conductor such as aluminum (Al), silver (Ag), or gold (Au). The first electrode 131 and the second electrode 132 can be a single-layer or multi-layer structure.

[0074] At least one of the first electrode 131 or the second electrode 132 may be connected to an auxiliary electrode. If connected to an auxiliary electrode, the resistance of the second electrode 132 may be reduced.

[0075] In some embodiments, the light-emitting substrate 1 may be a top-emitting light-emitting substrate or a bottom-emitting light-emitting substrate.

[0076] When the light-emitting substrate 1 is a top-emitting type light-emitting substrate, the second electrode 132 can be a transmission electrode, and the first electrode 131 can be a reflection electrode. When the light-emitting substrate 1 is a bottom-emitting type light-emitting substrate, the first electrode 131 is a transmission electrode, and the second electrode 132 is a reflection electrode.

[0077] Of course, in some embodiments, the light-emitting substrate 1 can also be a double-sided emitting light-emitting substrate, in which case the first electrode 131 and the second electrode 132 are both transmission electrodes.

[0078] In other embodiments, the light-emitting device 13 can be a "normal" light-emitting device or an "inverted" light-emitting device.

[0079] When the light-emitting device 13 is a "normal" type light-emitting device, the first electrode 131 is the anode and the second electrode 132 is the cathode. When the light-emitting device 13 is an "inverted" type light-emitting device, the first electrode 131 is the cathode and the second electrode 132 is the anode.

[0080] like Figure 1 and Figure 2 As shown, to improve the efficiency of electron and hole injection into the light-emitting pattern 133a, the light-emitting functional layer 133 may further include at least one of a hole transport layer (HTL) 133b, an electron transport layer (ETL) 133c, a hole injection layer (HIL) 133d, and an electron injection layer (EIL) 133e. For example, the light-emitting functional layer 133 may include a hole transport layer (HTL) 133b disposed between the anode and the light-emitting pattern 133a, and an electron transport layer (ETL) 133c disposed between the cathode and the light-emitting pattern 133a. To further improve the efficiency of the electron and hole injection light-emitting pattern 133a, the light-emitting functional layer 133 may also include a hole injection layer (HIL) 133d disposed between the anode and the hole transport layer 133b, and an electron injection layer (EIL) 133e disposed between the cathode and the electron transport layer 133c.

[0081] A driving circuit layer (DCL) connecting each light-emitting device 13 can also be disposed on the light-emitting substrate 1. The driving circuit layer (DCL) includes a driving circuit that can be connected to a control circuit to drive each light-emitting device 13 to emit light according to the electrical signal input by the control circuit. The driving circuit can be an active driving circuit or a passive driving circuit.

[0082] The light-emitting substrate 1 can emit white light, monochromatic light (light of a single color), or light with adjustable color.

[0083] In the first example, the light-emitting substrate 1 can emit white light. In this case, the multiple light-emitting devices 13 (e.g., all of them) included in the light-emitting substrate 1 emit white light. The material of the light-emitting pattern 133a in each light-emitting device 13 can include a mixture of red quantum dot light-emitting material, green quantum dot light-emitting material, and blue quantum dot light-emitting material. In this case, white light can be emitted by driving each light-emitting device 13 to emit light. The second case, as... Figure 1 and Figure 2 As shown, the plurality of light-emitting devices 13 include a red-emitting device 13R, a green-emitting device 13G, and a blue-emitting device 13B. The material of the light-emitting pattern 1331 in light-emitting device 13R may include red quantum dot light-emitting material, the material of the light-emitting pattern 1331 in light-emitting device 13G may include green quantum dot light-emitting material, and the material of the light-emitting pattern 1331 in light-emitting device 13B may include blue quantum dot light-emitting material. In this case, by controlling the brightness of the light emitted by light-emitting devices 13R, 13G, and 13B, light mixing can be achieved, so that the light-emitting substrate 1 emits white light.

[0084] In this example, the light-emitting substrate 1 can be used for lighting, that is, it can be applied to a lighting device.

[0085] In the second example, the light-emitting substrate 1 can emit monochromatic light. In the first case, the multiple light-emitting devices 13 (e.g., all of them) included in the light-emitting substrate 1 emit monochromatic light (such as red light). In this case, the material of the light-emitting pattern 133a in each light-emitting device 13 includes red quantum dot light-emitting material. In this case, red light emission can be achieved by driving each light-emitting device 13 to emit light. In the second case, the structure of the multiple light-emitting devices in the light-emitting substrate 1 is similar to that described in the second case of the first example. In this case, monochromatic light emission can be achieved by individually driving light-emitting devices 13R, 13G, or 13B.

[0086] In this example, the light-emitting substrate 1 can be used for illumination, i.e., it can be applied to a lighting device, or it can be used to display a single-color image or screen, i.e., it can be applied to a display device.

[0087] In the third example, the light-emitting substrate 1 can emit color-tunable light (i.e., colored light). The structure of the light-emitting substrate 1 is similar to that of the multiple light-emitting devices described in the second case of the first example. By controlling the brightness of each light-emitting device 13, the color and brightness of the mixed light emitted by the light-emitting substrate 1 can be controlled, thus achieving colored light emission.

[0088] In this example, the light-emitting substrate can be used to display images or screens, that is, it can be applied to display devices. Of course, the light-emitting substrate can also be used in lighting devices.

[0089] In the third example, taking the light-emitting substrate 1 as a display substrate, such as a full-color display panel, etc. Figure 3As shown, the light-emitting substrate 1 includes a display area A and a peripheral area S disposed around the display area A. The display area A includes a plurality of sub-pixel areas Q', each sub-pixel area Q' corresponding to an opening Q, and each opening Q corresponding to a light-emitting device. Each sub-pixel area Q' is provided with a pixel driving circuit 200 for driving the corresponding light-emitting device to emit light. The peripheral area S is used for wiring, such as connecting the gate driving circuit 100 of the pixel driving circuit 200.

[0090] In some embodiments, the pixel driving circuit 200 may include a thin-film transistor and a capacitor. For example, the pixel driving circuit 200 may be a 2T1C structure.

[0091] Of course, in some embodiments, the pixel driving circuit 200 can also be a 7T1C or 3T1C structure, etc. For example... Figure 4 As shown, a specific example of the structure of the pixel driving circuit 200 as 3T1C is illustrated.

[0092] Additionally, it should be noted that, in order to achieve white balance in a full-color display panel, for subpixel areas emitting different colors, the area of ​​the red-emitting subpixel area Q' and the area of ​​the green-emitting subpixel area Q' are larger than the area of ​​the blue-emitting subpixel area Q'. Furthermore, the area of ​​the red-emitting subpixel area Q' can be equal to the area of ​​the green-emitting subpixel area Q', or the area of ​​the red-emitting subpixel area Q' can be larger or smaller than the area of ​​the green-emitting subpixel area Q'.

[0093] In some embodiments, such as Figure 2 As shown, in addition to the display substrate, the above-mentioned display device may also include an encapsulation layer 14 and a light control layer 15 disposed on the display substrate. The encapsulation layer 14 is used to protect the light-emitting device 13, and the light control layer 15 can control the reflected light from the display substrate through external light. For example, the light control layer 15 may include a polarizer and / or a color filter layer (such as a CF (Color Film) layer).

[0094] When quantum dot light-emitting diodes (QLEDs) using quantum dots as light-emitting materials are widely used in the display field, the main technologies for preparing the light-emitting layer include inkjet printing, photolithography, and transfer printing. Among these, photolithography is the most promising method for preparing high-resolution QLEDs.

[0095] Photolithography, also known as quantum dot patterning, involves exposure and development. There are two possible scenarios: First, direct photolithography is used to pattern quantum dot luminescent materials. Specifically, photosensitive ligands are used to directly expose and develop the quantum dot luminescent materials, altering their solubility and thus achieving patterning. Second, a sacrificial layer is used to pattern the quantum dot luminescent materials. Specifically, before forming the quantum dot luminescent materials, a sacrificial layer is formed in the areas where the quantum dot luminescent materials need to be removed, and the pattern is then achieved using a sacrificial layer elution method.

[0096] While the aforementioned patterning method facilitates process control and effectively enables the production of high-resolution QLED products, it has several drawbacks. In the first scenario, the patterning method suffers from incomplete elution of the previous layer of quantum dot luminescent material (e.g., red quantum dot (RQD) luminescent material). This results in residual material from the previous layer after the patterning process of the next color quantum dot luminescent material (e.g., green quantum dot (GQD) luminescent material), causing color mixing and potentially leading to impure emission spectra during illumination, thus affecting device performance. In the second scenario, although the patterning method avoids quantum dot luminescent material residue, the continuous elution process results in the loss of quantum dot luminescent material, hindering the improvement of quantum dot luminescent material utilization.

[0097] In some embodiments of this disclosure, such as Figure 5A As shown, the plurality of light-emitting devices include at least one first light-emitting device 13A, which may be an example of a red light-emitting device. The at least one first light-emitting device 13A further includes a first material layer 134, which is disposed on the side of the light-emitting pattern 133a (also referred to herein as first light-emitting pattern 133a_1) included in the at least one first light-emitting device 13A near the substrate 11 and in contact with the light-emitting pattern 133a included in the at least one first light-emitting device 13A. The material of the light-emitting pattern 133a included in the at least one first light-emitting device 13A includes a first light-emitting material. The first material layer 134 includes a first material, which is capable of generating a second material under light radiation in a first wavelength band. The first material and the first light-emitting material have different solubilities in the same solvent as the second material. Alternatively, the first material is generated by a third material under light radiation in a second wavelength band, and the first material and the first light-emitting material have different solubilities in the same solvent as the third material.

[0098] Among them, the first light-emitting device 13A can be a red light-emitting device, and the first light-emitting material can be a red quantum dot light-emitting material.

[0099] The material of the first material layer 134 includes: a first material, which can generate a second material under light radiation in the first band, or the first material can be generated by a third material under light radiation in the second band. It can be seen that the first material can be used as a positive photoresist and the third material can be used as a negative photoresist.

[0100] Specifically, when the first material is used as a positive photoresist, it is soluble in the developer after exposure. At this time, the second material is also soluble in the developer, while the first material is insoluble in the developer. However, when the third material is used as a negative photoresist, it is insoluble in the developer after exposure. At this time, the first material is insoluble in the developer, while the third material is soluble in the developer.

[0101] Both of the above methods can achieve patterning of the first luminescent material.

[0102] In some embodiments, taking the first material as a positive photoresist as an example, when the light-emitting pattern 133a_1 included in the above-mentioned at least one first light-emitting device 13A is fabricated by a patterning process, as follows: Figure 5B As shown, a first thin film 10 can be formed on a substrate 11, and the first thin film 10 may include a first material C1. Then, a second thin film 20 is formed on the first thin film 10, and the material of the second thin film 20 may be the aforementioned red quantum dot luminescent material. Next, light of a first wavelength is used to irradiate the portions of the first thin film 10 and the second thin film 20 located in the region of the plurality of light-emitting devices 13 excluding the region of the first light-emitting device 13A, thereby changing the solubility of the portion of the first thin film 10 located in the region of the plurality of light-emitting devices 13 excluding the region of the first light-emitting device 13A. That is, at this time, the portion of the first thin film 10 located in the region of the plurality of light-emitting devices 13 excluding the region of the first light-emitting device 13A changes from the first material C1 to the first material C1. The second material C2 is soluble in the developing solution, while the first material C1 is insoluble in the developing solution. Therefore, the second material C2 can be removed by developing, which means removing the portion of the first film 10 located in the area of ​​the plurality of light-emitting devices 13 other than the area where the first light-emitting device 13A is located. At the same time, the portion of the second film 20 located in the area of ​​the plurality of light-emitting devices 13 other than the area where the first light-emitting device 13A is located is also removed. The portions of the first film 10 and the second film 20 located in the area where the first light-emitting device 13A is located are retained, thereby obtaining the first material layer 134 and the light-emitting pattern 133a_1 contained in at least one first light-emitting device 13A.

[0103] In other embodiments, taking a third material as the negative photoresist as an example, when the light-emitting pattern 133a_1 included in at least one first light-emitting device 13A is fabricated using a patterning process, such as Figure 5C As shown, a first thin film 10 can be formed on a substrate 11, and the first thin film 10 may include a third material C3. Then, a second thin film 20 is formed on the first thin film 10, and the material of the second thin film 20 may be the aforementioned red quantum dot luminescent material. Next, light of the second wavelength is used to irradiate the portions of the first thin film 10 and the second thin film 20 located in the region where the first light-emitting device 13A is located, thereby changing the solubility of the portion of the first thin film 10 located in the region other than the region where the first light-emitting device 13A is located. That is, at this time, the portion of the first thin film 10 located in the region where the first light-emitting device 13A is located changes from the third material C3 to the first material C1. The first thin film 10 is located in the region of multiple light-emitting devices 13 excluding the first light-emitting device. The material of the portion of the area where component 13A is located remains unchanged and is still the third material C3. The first material C1 is insoluble in the developer, while the third material C3 is soluble in the developer. The developer is used to remove the portion of the first film 10 located in the area of ​​the plurality of light-emitting devices 13 other than the area where the first light-emitting device 13A is located. At the same time, the portion of the second film 20 located in the area of ​​the plurality of light-emitting devices 13 other than the area where the first light-emitting device 13A is located is also removed. The portions of the first film 10 and the second film 20 located in the area where the first light-emitting device 13A is located are retained. Thus, the first material layer 134 and the light-emitting pattern 133a_1 contained in at least one first light-emitting device 13A can be obtained.

[0104] Compared to the direct photolithography method used in related technologies for patterning quantum dot luminescent materials, this method adds a first material C1 or a third material C3 as a photoresist layer. Utilizing the difference in solubility of the first material C1 or the third material C3 before and after light exposure, the first material C1 or the third material C3 is exposed and developed. The second material C2 or the third material C3 can then be used as a sacrificial layer to remove the portion of the red quantum dot luminescent material located outside the area where the first light-emitting device 13A is located. This avoids the formation of residual red quantum dot luminescent material in areas other than the area where the first light-emitting device 13A is located, thus solving the problem of color mixing caused by residual quantum dot luminescent material from the previous layer after the patterning process of the next color quantum dot luminescent material in related technologies. Furthermore, compared to the sacrificial layer method used in related technologies for patterning quantum dot luminescent materials, by selecting materials that allow the first luminescent material and the portion of the first material C1 or the third material C3 used as a sacrificial layer to have different solubilities in the same solvent, the removal of the first luminescent material during subsequent development can be avoided, thus solving the problem of quantum dot luminescent material loss in related technologies.

[0105] In some embodiments, both the first material C1 and the first luminescent material include: metal nano-ions and ligands bound to the metal nano-ions. The ligands contained in the first material C1 and the ligands contained in the first luminescent material may be the same or different. If the ligands contained in the first material C1 and the ligands contained in the first luminescent material are the same, the ligands contained in the third material C3 are photosensitive ligands. If the ligands contained in the first material C1 and the ligands contained in the first luminescent material are different, the ligands contained in the first luminescent material are non-photosensitive ligands. The non-photosensitive ligands have different solubilities in the same solvent as the second material C2, or the non-photosensitive ligands have different solubilities in the same solvent as the third material C3.

[0106] In these embodiments, depending on whether the first material C1 generates the second material under light radiation in the first wavelength band, or whether the first material C1 is generated by the third material C3 under light radiation in the second wavelength band, the ligand contained in the first material C1 can be a photosensitive ligand or a non-photosensitive ligand. Specifically, when the first material C1 generates the second material under light radiation in the first wavelength band, the ligand contained in the first material C1 is a photosensitive ligand. In this case, depending on whether the ligand contained in the first material C1 is the same as or different from the ligand contained in the first luminescent material, there are two possible scenarios. In the first scenario, the ligand contained in the first material C1 is the same as the ligand contained in the first luminescent material, in which case the ligand contained in the first luminescent material is also a photosensitive ligand. In the second scenario, the ligand contained in the first material is different from the ligand contained in the first luminescent material, in which case the ligand contained in the first luminescent material can be a photosensitive ligand or a non-photosensitive ligand, as long as the solubility of the first luminescent material and the second material C2 in the same solvent is different.

[0107] When the first material C1 is generated under the second-band light radiation by the third material C3, the ligand contained in the third material C3 is a photosensitive ligand. In this case, the ligand contained in the first material C1 can be a non-photosensitive ligand, and the ligand contained in the first luminescent material can also be a non-photosensitive ligand. In this case, the non-photosensitive ligand contained in the first luminescent material can be the same as or different from the non-photosensitive ligand contained in the first material C1, and the non-photosensitive ligand contained in the first luminescent material and the non-photosensitive ligand contained in the first material C1 have different solubilities in the same solvent as the second material C2.

[0108] In these embodiments, when the ligands contained in the first material C1 and the ligands contained in the first luminescent material are the same, regardless of the above-mentioned case, in the subsequent development process, the first material C1 and the first luminescent material can be removed or retained as a whole because the ligands are the same. Compared with the case where the ligands contained in the first material C1 and the ligands contained in the first luminescent material are different and have different solubilities, the first luminescent material can be removed cleanly, thereby improving the patterning effect of the first luminescent material.

[0109] In some embodiments, the photosensitive ligand includes a ligand capable of undergoing a decomposition or cross-linking reaction under light irradiation.

[0110] In some embodiments, the photosensitive ligand may be a compound containing unsaturated groups or epoxy groups, which undergo cross-linking reactions upon light irradiation, thereby altering the solubility. Alternatively, the photosensitive ligand may have amide or ester bonds, which lose acyl groups upon light irradiation, thereby changing the solubility.

[0111] In some embodiments, the photosensitive ligand includes either 2-(Boc-amino)ethanethiol (Boc for short) or MMES (mono[2-[(2-methyl-acryloyl)oxy]ethyl] succinate).

[0112] When the photosensitive ligand includes 2-(Boc-amino)ethanethiol, in application, under ultraviolet (UV) irradiation in the presence of a photoacidifier (such as 2,4-bis(trichloromethyl)-6-p-methoxystyryl-S-triazine, PAG), 2-(Boc-amino)ethanethiol can lose its Boc group to become 2-aminoethanethiol, thereby changing its solubility. The specific reaction equation is shown below. When the photosensitive ligand includes MMES, such ligands have the following characteristics: one end has double bonds, triple bonds, acrylate bonds, ethylene oxide, or other groups for photocrosslinking, and the other end has coordinating groups such as thiol, carboxyl, and amino groups. In application, (2,4,6-trimethylbenzoyl)diphenylphosphine oxide (TPO) is used as a photoinitiator. The free radicals generated by TPO under light irradiation initiate the crosslinking of the terminal double bonds of the MMES ligand, thereby changing its solubility.

[0113] The reaction equation for 2-(Boc-amino)ethanethiol under light irradiation is shown below:

[0114]

[0115] In some embodiments, the metal nano-ions contained in the first material C1 include zinc oxide, titanium oxide, or nickel oxide, etc., and the metal nano-ions contained in the first luminescent material include quantum dots.

[0116] When the metal nano-ions contained in the first material C1 include zinc oxide or titanium oxide, the first material can have electron transport function. In this case, the first material layer 134 can also serve as an electron transport layer 133c. When the metal nano-ions contained in the first material include nickel oxide, the first material C1 can have hole transport function. In this case, the first material layer 134 can also serve as a hole transport layer.

[0117] Quantum dots can be semiconductor nanocrystals and can have various shapes such as spherical, conical, multi-armed, and / or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplate particles, quantum rods, or quantum sheets. Here, a quantum rod can be a quantum dot with an aspect ratio (length:width ratio) greater than about 1, for example, greater than or equal to about 2, greater than or equal to about 3, or greater than or equal to about 5. For example, the quantum rod can have an aspect ratio less than or equal to about 50, less than or equal to about 30, or less than or equal to about 20.

[0118] Quantum dots can have particle diameters of, for example, about 1 nm to about 100 nm, about 1 nm to about 80 nm, about 1 nm to about 50 nm, or about 1 nm to 20 nm (for non-spherical shapes, the average maximum particle length).

[0119] The band gap of a quantum dot can be controlled according to its size and composition, thus controlling the emission wavelength. For example, as the size of the quantum dot increases, it can have a narrow band gap and thus be configured to emit light in a relatively long wavelength region, while as the size of the quantum dot decreases, it can have a wide band gap and thus be configured to emit light in a relatively short wavelength region. For example, a quantum dot can be configured to emit light in a predetermined wavelength region of the visible light region, depending on its size and / or composition. For example, a quantum dot can be configured to emit blue light, red light, or green light, and blue light can have a peak emission wavelength (λmax) for example in the range of about 430 nm to about 480 nm, red light can have a peak emission wavelength (λmax) for example in the range of about 600 nm to about 650 nm, and green light can have a peak emission wavelength (λmax) for example in the range of about 520 nm to about 560 nm.

[0120] For example, the average particle size of the quantum dots configured to emit blue light may be, for example, less than or equal to about 4.5 nm, and in the range of, for example, less than or equal to about 4.3 nm, less than or equal to about 4.2 nm, less than or equal to about 4.1 nm, or less than or equal to about 4.0 nm. For example, the average particle size of the quantum dots may be from about 2.0 nm to about 4.5 nm, for example, from about 2.0 nm to about 4.3 nm, from about 2.0 nm to about 4.2 nm, from about 2.0 nm to about 4.1 nm, or from about 2.0 nm to about 4.0 nm.

[0121] Quantum dots can have quantum yields of, for example, greater than or equal to about 10%, greater than or equal to about 20%, greater than or equal to about 30%, greater than or equal to about 50%, greater than or equal to about 60%, greater than or equal to about 70%, or greater than or equal to about 90%.

[0122] Quantum dots can have a relatively narrow half-width (FWHM). Here, FWHM is the width of half the wavelength corresponding to the peak absorption point, and when the FWHM is narrow, it can be configured to emit light in a narrower wavelength region and achieve higher color purity. Quantum dots may have a FWHM of, for example, less than or equal to about 50 nm, less than or equal to about 49 nm, less than or equal to about 48 nm, less than or equal to about 47 nm, less than or equal to about 46 nm, less than or equal to about 45 nm, less than or equal to about 44 nm, less than or equal to about 43 nm, less than or equal to about 42 nm, less than or equal to about 41 nm, less than or equal to about 40 nm, less than or equal to about 39 nm, less than or equal to about 38 nm, less than or equal to about 37 nm, less than or equal to about 36 nm, less than or equal to about 35 nm, less than or equal to about 34 nm, less than or equal to about 33 nm, less than or equal to about 32 nm, less than or equal to about 31 nm, less than or equal to about 30 nm, less than or equal to about 29 nm, or less than or equal to about 28 nm. Within the range, it may have, for example, an FWHM of about 2nm to about 49nm, about 2nm to about 48nm, about 2nm to about 47nm, about 2nm to about 46nm, about 2nm to about 45nm, about 2nm to about 44nm, about 2nm to about 43nm, about 2nm to about 42nm, about 2nm to about 41nm, about 2nm to about 40nm, about 2nm to about 39nm, about 2nm to about 38nm, about 2nm to about 37nm, about 2nm to about 36nm, about 2nm to about 35nm, about 2nm to about 34nm, about 2nm to about 33nm, about 2nm to about 32nm, about 2nm to about 31nm, about 2nm to about 30nm, about 2nm to about 29nm, or about 2nm to about 28nm.

[0123] For example, quantum dots may include group II-VI semiconductor compounds, group III-V semiconductor compounds, group IV-VI semiconductor compounds, group IV semiconductors, group I-III-VI semiconductor compounds, group I-II-IV-VI semiconductor compounds, group II-III-V semiconductor compounds, or combinations thereof. Group II-VI semiconductor compounds may be selected, for example, from: binary compounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, or mixtures thereof; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnT e, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, or mixtures thereof; and quaternary compounds such as HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or mixtures thereof, but not limited thereto. III-V semiconductor compounds may be selected, for example, from: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, or mixtures thereof; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, or mixtures thereof; and quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or mixtures thereof, but are not limited thereto. IV-VI group semiconductor compounds may be selected, for example, from: binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, or mixtures thereof; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, or mixtures thereof; and quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, or mixtures thereof, but are not limited thereto.Group IV semiconductors may be selected, for example, from: elemental (monological) semiconductors such as Si, Ge, or mixtures thereof; and binary semiconductor compounds such as SiC, SiGe, and mixtures thereof, but are not limited thereto. Group I-III-VI semiconductor compounds may be, for example, CuInSe2, CuInS2, CuInGaSe, CuInGaS, or mixtures thereof, but are not limited thereto. Group I-II-IV-VI semiconductor compounds may be, for example, CuZnSnSe, CuZnSnS, or mixtures thereof, but are not limited thereto. Group II-III-V semiconductor compounds may include, for example, InZnP, but are not limited thereto.

[0124] Quantum dots can be distributed in a substantially uniform or locally different concentrations, including elemental semiconductors, binary semiconductor compounds, ternary semiconductor compounds, or quaternary semiconductor compounds.

[0125] For example, quantum dots can include cadmium-free (Cd) quantum dots. Cadmium-free quantum dots are quantum dots that do not contain cadmium (Cd). Cadmium (Cd) can cause serious environmental / health problems and is a restricted element under the Restriction of Hazardous Substances Directive (RoHS) in many countries, and therefore cadmium-free quantum dots can be used effectively.

[0126] As an example, quantum dots can be semiconductor compounds comprising at least one of zinc (Zn), and tellurium (Te) and selenium (Se). For example, quantum dots can be Zn-Te semiconductor compounds, Zn-Se semiconductor compounds, and / or Zn-Te-Se semiconductor compounds. For example, the amount of tellurium (Te) in a Zn-Te-Se semiconductor compound can be less than the amount of selenium (Se). The semiconductor compound can have a peak emission wavelength (λ maximum) in a wavelength region of about 480 nm, for example, about 430 nm to about 480 nm, and can be configured to emit blue light.

[0127] For example, the quantum dot may be a semiconductor compound comprising at least one of indium (In) and zinc (Zn) and phosphorus (P). For example, the quantum dot may be an In-P semiconductor compound and / or an In-Zn-P semiconductor compound. For example, in an In-Zn-P semiconductor compound, the molar ratio of zinc (Zn) to indium (In) may be greater than or equal to about 25. The semiconductor compound may have a peak emission wavelength (λ maximum) in a wavelength region less than about 700 nm, for example, from about 600 nm to about 650 nm, and may be configured to emit red light.

[0128] Quantum dots can have a core-shell structure, with one quantum dot surrounding another. For example, the core and shell of a quantum dot can have an interface, and at least one element of the core or shell can have a concentration gradient at the interface, wherein the concentration of the element in the shell decreases towards the core. For example, the material composition of the shell of a quantum dot has a higher band gap than the material composition of the core of the quantum dot, and thus the quantum dot can exhibit a quantum confinement effect.

[0129] A quantum dot may have a quantum dot core and a multilayer quantum dot shell surrounding the core. Here, the multilayer shell has at least two shells, wherein each shell may be a single composition, an alloy, and / or have a concentration gradient.

[0130] For example, the shells of a multi-layered structure that are far from the core can have a higher band gap than the shells that are closer to the core, and thus the quantum dot can exhibit a quantum confinement effect.

[0131] For example, a quantum dot having a core-shell structure may include, for example, a core comprising a first semiconductor compound comprising zinc (Zn) and at least one of tellurium (Te) and selenium (Se); and a shell disposed on at least a portion of the core and having a composition different from that of the core comprising a second semiconductor compound.

[0132] For example, the first semiconductor compound may be a Zn-Te-Se based semiconductor compound comprising zinc (Zn), tellurium (Te) and selenium (Se), for example, a Zn-Se based semiconductor compound comprising a small amount of tellurium (Te), for example, a semiconductor compound represented by ZnTexSe1-x, wherein x is greater than about 0 and less than or equal to 0.05.

[0133] For example, in a first semiconductor compound based on Zn-Te-Se, the molar amount of zinc (Zn) may be higher than the molar amount of selenium (Se), and the molar amount of selenium (Se) may be higher than the molar amount of tellurium (Te). For example, in the first semiconductor compound, the molar ratio of tellurium (Te) to selenium (Se) may be less than or equal to about 0.05, less than or equal to about 0.049, less than or equal to about 0.048, less than or equal to about 0.047, less than or equal to about 0.045, less than or equal to about 0.044, less than or equal to about 0.043, less than or equal to about 0.042, less than or equal to about 0.041, less than or equal to about 0.04, less than or equal to about 0.039, less than or equal to about 0.035, less than or equal to about 0.03, less than or equal to about 0.02. 9. Less than or equal to about 0.025, less than or equal to about 0.024, less than or equal to about 0.023, less than or equal to about 0.022, less than or equal to about 0.021, less than or equal to about 0.02, less than or equal to about 0.019, less than or equal to about 0.018, less than or equal to about 0.017, less than or equal to about 0.016, less than or equal to about 0.015, less than or equal to about 0.014, less than or equal to about 0.013, less than or equal to about 0.013, less than or equal to about 0.011, or less than or equal to about 0.01. For example, in the first semiconductor compound, the molar ratio of tellurium (Te) to zinc (Zn) may be less than or equal to about 0.02, less than or equal to about 0.019, less than or equal to about 0.018, less than or equal to about 0.017, less than or equal to about 0.016, less than or equal to about 0.015, less than or equal to about 0.014, less than or equal to about 0.013, less than or equal to about 0.013, less than or equal to about 0.011, or less than or equal to about 0.010.

[0134] The second semiconductor compound may include, for example, group II-VI semiconductor compounds, group III-V semiconductor compounds, group IV-VI semiconductor compounds, group IV semiconductors, group I-III-VI semiconductor compounds, group I-II-IV-VI semiconductor compounds, group II-III-V semiconductor compounds, or combinations thereof. Examples of group II-VI semiconductor compounds, group III-V semiconductor compounds, group IV-VI semiconductor compounds, group IV semiconductors, group I-III-VI semiconductor compounds, group I-II-IV-VI semiconductor compounds, and group II-III-V semiconductor compounds are the same as those described above.

[0135] For example, the second semiconductor compound may include zinc (Zn), selenium (Se), and / or sulfur (S). For example, the shell may include ZnSeS, ZnSe, ZnS, or combinations thereof. For example, the shell may include at least one inner shell disposed near the core and an outermost shell disposed at the outermost edge of the quantum dot. The inner shell may include ZnSeS, ZnSe, or combinations thereof, and the outermost shell may include ZnS. For example, the shell may have a concentration gradient of components, and the amount of, for example, sulfur (S) may increase as it leaves the core.

[0136] For example, a quantum dot having a core-shell structure may include: a core comprising a third semiconductor compound comprising at least one of indium (In), zinc (Zn), and phosphorus (P); and a shell disposed on at least a portion of the core and comprising a fourth semiconductor compound having a composition different from that of the core.

[0137] In In-Zn-P based third semiconductor compounds, the molar ratio of zinc (Zn) to indium (In) can be greater than or equal to about 25. For example, in In-Zn-P based third semiconductor compounds, the molar ratio of zinc (Zn) to indium (In) can be greater than or equal to about 28, greater than or equal to about 29, or greater than or equal to about 30. For example, in In-Zn-P based third semiconductor compounds, the molar ratio of zinc (Zn) to indium (In) can be less than or equal to about 55, for example, less than or equal to about 50, less than or equal to about 45, less than or equal to about 40, less than or equal to about 35, less than or equal to about 34, less than or equal to about 33, or less than or equal to about 32.

[0138] The fourth semiconductor compound may include, for example, group II-VI semiconductor compounds, group III-V semiconductor compounds, group IV-VI semiconductor compounds, group IV semiconductors, group I-III-VI semiconductor compounds, group I-II-IV-VI semiconductor compounds, group II-III-V semiconductor compounds, or combinations thereof. Examples of group II-VI semiconductor compounds, group III-V semiconductor compounds, group IV-VI semiconductor compounds, group IV semiconductors, group I-III-VI semiconductor compounds, group I-II-IV-VI semiconductor compounds, and group II-III-V semiconductor compounds are the same as those described above.

[0139] For example, the fourth semiconductor compound may include zinc (Zn) and sulfur (S), and optionally selenium (Se). For example, the shell may include ZnSeS, ZnSe, ZnS, or combinations thereof. For example, the shell may include at least one inner shell disposed near the core and an outermost shell disposed at the outermost edge of the quantum dot. At least one of the inner shell and the outermost shell may include the fourth semiconductor compound ZnS, ZnSe, or ZnSeS.

[0140] The luminescent pattern may have a thickness of, for example, from about 5 nm to about 200 nm, within the range of, for example, from about 10 nm to about 150 nm, for example, from about 10 nm to about 100 nm, for example, from about 10 nm to about 50 nm. The quantum dots (QDs) contained in the luminescent pattern may be laminated into one or more layers, for example, two layers. However, embodiments of the inventive concept are not limited thereto, and the quantum dots (QDs) may be laminated into one to ten layers. Depending on the type (or kind) of quantum dots (QDs) used and the desired emission wavelength of the light, the quantum dots (QDs) may be laminated into any suitable number of layers.

[0141] Quantum dots can have relatively deep HOMO (Highest Occupied Molecular Orbital) energy levels, for example, absolute values ​​of HOMO energy levels greater than or equal to about 5.4 eV, and within the range, for example greater than or equal to about 5.5 eV, for example greater than or equal to about 5.6 eV, for example greater than or equal to about 5.7 eV, for example greater than or equal to about 5.8 eV, for example greater than or equal to about 5.9 eV, for example greater than or equal to about 6.0 eV. Within the stated range, the HOMO energy levels of the quantum dot layer 13 can be, for example, about 5.4 eV to about 7.0 eV, for example, about 5.4 eV to about 6.8 eV, for example, about 5.4 eV to about 6.7 eV, for example, about 5.4 eV to about 6.5 eV, for example, about 5.4 eV to about 6.3 eV, for example, about 5.4 eV to about 6.2 eV, for example, about 5.4 eV to about 6.1 eV, and within the stated range, for example, about 5.5 eV to about 7.0 eV, for example, about 5.5 eV to about 6.8 eV, for example, about 5.5 eV to about 6.7 eV, for example, about 5.5 eV to about 6.5 eV, for example, about 5.5 eV to about 6.3 eV, for example, about 5.5 eV to about 6.2 eV, for example, about 5.5 eV to about 6.1 eV, for example, about 5.5 eV to about 7.0 eV, for example, about 5.6 eV to about 6.8 eV, for example, about 5.6 eV to about 6.7 eV, for example, about 5.6 eV to about 6.5 eV, for example, about 5.6 eV to about 6.3 eV, for example, about 5.6 eV to about 6.2 eV, for example, about 5 From 0.6 eV to about 6.1 eV, within the range of, for example, from about 5.7 eV to about 7.0 eV, for example, from about 5.7 eV to about 6.8 eV, for example, from about 5.7 eV to about 6.7 eV, for example, from about 5.7 eV to about 6.5 eV, for example, from about 5.7 eV to about 6.3 eV, for example, from about 5.7 eV to about 6.2 eV, for example, from about 5.7 eV to about 6.1 eV, within the range of, for example, from about 5.8 eV to about 7.0 eV, for example, from about 5.8 eV to about 6.8 eV, for example, from about 5.8 eV. eV to 6.7 eV, for example, about 5.8 eV to 6.5 eV, for example, about 5.8 eV to 6.3 eV, for example, about 5.8 eV to 6.2 eV, for example, about 5.8 eV to 6.1 eV, within the range of, for example, about 6.0 eV to 7.0 eV, for example, about 6.0 eV to 6.8 eV, for example, about 6.0 eV to 6.7 eV, for example, about 6.0 eV to 6.5 eV, for example, about 6.0 eV to 6.3 eV, for example, about 6.0 eV to 6.2 eV.

[0142] Quantum dots can have relatively shallow LUMO (Lowest Unoccupied Molecular Orbital) energy levels, with absolute values, for example, less than or equal to about 3.7 eV, and within the range, for example, less than or equal to about 3.6 eV, for example, less than or equal to about 3.5 eV, for example, less than or equal to about 3.4 eV, for example, less than or equal to about 3.3 eV, for example, less than or equal to about 3.2 eV, for example, less than or equal to about 3.0 eV. Within the above range, the LUMO energy levels of the quantum dot layer can be about 2.5 eV to about 3.7 eV, about 2.5 eV to about 3.6 eV, about 2.5 eV to about 3.5 eV, about 2.5 eV to about 3.5 eV, about 2.5 eV to about 3.4 eV, about 2.5 eV to about 3.3 eV, about 2.5 eV to about 3.2 eV, about 2.5 eV to about 3.1 eV, about 2.5 eV to about 3.0 eV, and about 2.8 eV. eV to about 3.7 eV, about 2.8 eV to about 3.6 eV, about 2.8 eV to about 3.5 eV, about 2.8 eV to about 3.4 eV, about 2.8 eV to about 3.3 eV, about 2.8 eV to about 3.2 eV, about 3.0 eV to about 3.7 eV, about 3.0 eV to about 3.6 eV, about 3.0 eV to about 3.5 eV, or about 3.0 eV to about 3.4 eV.

[0143] The quantum dots may have a band gap of about 1.7 eV to about 2.3 eV or about 2.4 eV to about 2.9 eV. Within these ranges, for example, the quantum dot layer 13 may have a band gap of about 1.8 eV to about 2.2 eV or about 2.4 eV to about 2.8 eV, and within these ranges, for example, about 1.9 eV to about 2.1 eV or about 2.4 eV to about 2.7 eV.

[0144] In other embodiments, taking a non-photosensitive material as an example, the first luminescent material may include quantum dots and non-photosensitive ligands, or the first luminescent material may not contain ligands, in which case the first luminescent material only includes quantum dots.

[0145] In these embodiments, the specific selection of quantum dots can be referred to the above description of quantum dots, and will not be repeated here.

[0146] In some embodiments, the first material has carrier transport capabilities.

[0147] That is, in these embodiments, the first material layer 134 can serve as a carrier transport layer or a carrier blocking layer. Regardless of whether the first material layer 134 serves as a carrier transport layer or a carrier blocking layer, it can still transport carriers. For example, when the first material layer 134 serves as an electron transport layer or a hole blocking layer, it can transport electrons; when it serves as a hole transport layer or an electron blocking layer, it can transport holes. Compared to the first material layer 134 not having carrier transport functionality, this does not affect carrier transport or luminescence.

[0148] For example, taking the first material as having electron transport function, the first material layer 134 can serve as an electron transport layer or a hole blocking layer. In this case, the electron mobility of the first material can be 1×10⁻⁶. -4 cm 2 / V·s~2×10 -3 cm 2 The absolute value of the LUMO energy level can be 3.6 eV to 4.2 eV. Taking the first material having hole transport function as an example, the first material layer 134 can serve as a hole transport layer or an electron blocking layer. In this case, the hole mobility of the first material can be 1 × 10⁻⁶ V·s. -4 cm 2 / V·s~2×10 -3 cm 2 / V·s, the absolute value of the HOMO level can be 5.1eV~6.2eV.

[0149] In some embodiments, such as Figure 5A As shown, at least one first light-emitting device 13A further includes a carrier transport layer 300, which is disposed on the side of the first material layer 134 near the substrate 11 and is in contact with the first material layer 134.

[0150] In these embodiments, taking the carrier transport layer 300 as an electron transport layer 133c as an example, when the first material has the function of carrier transport, the first material layer 134 can serve as a hole blocking layer and can also play a role in regulating the balance of hole and electron injection.

[0151] In some embodiments, the carrier transport layer 300 can cover the entire layer.

[0152] In these embodiments, all of the plurality of light-emitting devices 13 except for at least one first light-emitting device 13A which includes a carrier transport layer, also include a carrier transport layer.

[0153] The carrier transport layer 300 can be obtained by spin coating.

[0154] In other embodiments, such as Figure 5D As shown, the first material layer 134 serves as the carrier transport layer 300 and is in direct contact with the first electrode 131.

[0155] In these embodiments, the first material layer 134 itself can realize the carrier transport function, and there is no need to set up an additional carrier transport layer 300. Unlike the above-mentioned carrier transport layer 300 which covers the entire layer, this carrier transport layer 300 is only disposed in the area where the first light-emitting device 13A is located.

[0156] The above description only uses the first material layer 134 as an example of the carrier transport layer 300. Those skilled in the art will understand that the first material layer 134 can also be used as a carrier injection layer or a carrier blocking layer, both of which can achieve the corresponding technical effects. Furthermore, the above only shows the case where the first material layer 134 is in direct contact with the first electrode 131. Those skilled in the art will understand that when the first material layer 134 is used as the carrier transport layer 300, a carrier injection layer can also be provided between the first material layer 134 and the first electrode 131. In this case, the carrier injection layer can also cover the entire layer.

[0157] In some embodiments, such as Figure 5A As shown, when at least one first light-emitting device 13A further includes a carrier transport layer 300, the thickness d1 of the first material layer 134 is less than the thickness d of the carrier transport layer 300.

[0158] In these embodiments, when the first material does not have carrier transport functionality, the thickness d1 of the first material layer 134 is less than the thickness d of the carrier transport layer 300, which avoids the first material layer 134 being too thick and affecting carrier transport. When the first material has carrier transport functionality, due to the presence of the carrier transport layer 300, the thickness d1 of the first material layer 134 does not need to be too thick; it is sufficient that the first material layer 134 can effectively pattern the quantum dot luminescent material.

[0159] In some examples, such as Figure 5A As shown, when the first material has the function of carrier transport, the thickness d1 of the first material layer 134 is 5nm~20nm, and the thickness d of the carrier transport layer 300 is 50nm~70nm.

[0160] In some embodiments, when the first material layer 134 serves as the carrier transport layer 300, the thickness d1 of the first material layer 134 is 50 nm to 70 nm.

[0161] That is, in these embodiments, the carrier transport layer 300 can be omitted, and the thickness d1 of the first material layer 134 can be increased to the thickness of the carrier transport layer 300.

[0162] In some embodiments, where at least one first light-emitting device 13A further includes a carrier transport layer 300, the material of the carrier transport layer 300 includes metal nano-ions and ligands bound to the metal nano-ions. The metal nano-ions contained in the material of the carrier transport layer 300 may be the same as or different from the metal nano-ions contained in the first material, and the ligands contained in the material of the carrier transport layer 300 may be different from the ligands contained in the first material.

[0163] In these embodiments, taking the carrier transport layer 300 as an electron transport layer and the metal nano-ions contained in the carrier transport layer 300 as zinc oxide as an example, the metal nano-ions contained in the first material can also be zinc oxide. In this case, the first material can have electron transport function. In order to realize the patterning of the first luminescent material, the ligand contained in the first material can be a photosensitive ligand, and the ligand contained in the material of the carrier transport layer 300 can be a non-photosensitive ligand (such as an ethanolamine ligand). The material of the carrier transport layer 300 is not soluble in the developing solution. In this way, the carrier transport layer 300 can be prevented from being removed during the subsequent developing process, and the integrity of the entire layer coverage of the carrier transport layer 300 can be maintained.

[0164] It should be noted that in some embodiments, when at least one first light-emitting device 13A further includes a carrier transport layer 300, the first material can also be a photosensitive ligand. For example, the photosensitive ligand can be the same as the ligand contained in the first light-emitting material. Similar to the above-mentioned case where the first material includes a photosensitive ligand and the ligand contained in the first material is the same as the ligand contained in the first light-emitting material, the first material and the first light-emitting material can also have the same solubility in the same solvent. During development, the portion of the first film 10 and the second film 20 located in the area other than the area where the first light-emitting device 13A is located can be washed away as a whole, thereby achieving the technical effect of thoroughly washing away the red quantum dot light-emitting material. However, unlike the case where the first material includes a photosensitive ligand, the first material can also undergo a complexation reaction with the surface of the carrier transport layer 300 to generate a product of zinc oxide, titanium oxide, or nickel oxide combined with the photosensitive ligand, which is equivalent to forming a material layer with carrier transport function between the first material layer 134 and the carrier transport layer 300.

[0165] Specifically, the HOMO and / or LUMO energy levels of the first material layer 134 are not specifically limited. When the material of the first material layer 134, i.e., the first material, does not have the function of carrier transport, the thickness d1 of the first material layer 134 can be very small and will not affect the carrier transport. When the material of the first material layer 134, i.e., the first material, has the function of carrier transport, the HOMO and / or LUMO energy levels of the first material layer 134 can match the HOMO and / or LUMO energy levels of the carrier transport layer 300 and the first light-emitting pattern 133a_1.

[0166] Specifically, when the material of the first material layer 134 has electron transport function, the LUMO energy level of the first material layer 134 can be between the LUMO energy level of the carrier transport layer 300 and the LUMO energy level of the first luminescent pattern 133a_1. When the material of the first material layer 134 has hole transport function, the HOMO energy level of the first material layer 134 can be between the HOMO energy level of the carrier transport layer 300 and the HOMO energy level of the first luminescent pattern 133a_1.

[0167] When the material of the first material layer 134 is a photosensitive ligand, and zinc oxide or titanium oxide is formed on the surface of the first material layer 134 and the carrier transport layer 300, the LUMO energy level of the material layer with carrier transport function formed between the carrier transport layer 300 and the first material layer 134 can be between the LUMO energy level of the carrier transport layer 300 and the LUMO energy level of the first luminescent pattern 133a_1. Similarly, when the material of the carrier transport layer 300 is nickel oxide, the HOMO energy level of the material layer with carrier transport function formed between the carrier transport layer 300 and the first material layer 134 can be between the HOMO energy level of the carrier transport layer 300 and the HOMO energy level of the first luminescent pattern 133a_1.

[0168] In some embodiments, such as Figure 5AAs shown, the plurality of light-emitting devices 13 further includes: at least one second light-emitting device 13B, and at least one second light-emitting device 13B further includes: a second material layer 135, the second material layer 135 being disposed on the side of the light-emitting pattern 133a (also referred to as the second light-emitting pattern 133a_2) included in the at least one second light-emitting device 13B near the substrate 11, and in contact with the light-emitting pattern 133a included in the at least one second light-emitting device 13B. The material of the light-emitting pattern 133a included in the at least one second light-emitting device 13B includes a second light-emitting material, and the material of the second material layer 135 includes: a fourth material, the fourth material being capable of generating a fifth material under light radiation in the third wavelength band, the fourth material and the second light-emitting material having different solubilities in the same solvent as the fifth material, or the fourth material being generated by a sixth material under light radiation in the fourth wavelength band, the fourth material and the second light-emitting material having different solubilities in the same solvent as the sixth material.

[0169] In these embodiments, at least one second light-emitting device 13B can be a green light-emitting device, and the second light-emitting material can be a green quantum dot light-emitting material. Similar to the red quantum dot light-emitting material described above, when a second light-emitting pattern 133a_2 is formed on a substrate 11 on which a first material layer 134 and a light-emitting pattern 133a_1 contained in at least one first light-emitting device 13A are formed, the problem of green quantum dot light-emitting material remaining in areas other than the area where the second light-emitting device 13B is located can also be solved by introducing a fourth material or a sixth material as a photoresist layer in the related art. For details, please refer to the description of introducing the first material or the third material as a photoresist layer described above, which will not be repeated here.

[0170] It should be noted that before fabricating the second material layer 135 and the second light-emitting pattern 133a_2, the first material layer 134 and the first light-emitting pattern 133a_1 have already been formed on the substrate 11. Here, depending on whether the first material layer 134 is in direct contact with the first electrode 131, there are two possible cases. In the first case, the first material layer 134 is in direct contact with the first electrode 131. In this case, the first material layer 134 can serve as the carrier transport layer 300. In the second case, the first material layer 134 is not in direct contact with the first electrode 131. In this case, at least one first light-emitting device 13A may also include the carrier transport layer 300.

[0171] In either case, during the fabrication of the first material layer 134, depending on the physicochemical properties of the material, the portion of the first material C1 or the third material C3 in the area other than the area where at least one first light-emitting device 13A is located may be completely removed or have residues, and no specific limitation is made here.

[0172] In some embodiments, taking at least one first light-emitting device 13A as an example, which further includes a carrier transport layer 300 and a first material C1 having a carrier transport function, the materials of the carrier transport layer 300 and the first material C1 can both be materials of zinc oxide and ligands. In this case, taking the first material C1 generated by the third material C3 under the light radiation of the second band as an example, since there is an interaction force between the third material C3 and the carrier transport layer 300, when the portion of the first film 10 located in the area other than the area where at least one first light-emitting device 13A is located is subsequently removed by development, the portion of the first film 10 located in the area other than the area where at least one first light-emitting device 13A is located cannot be completely removed, but a small amount of residue remains.

[0173] For example, in some embodiments, such as Figure 5A As shown, at least one second light-emitting device 13B further includes a third material layer 136, which is disposed on the side of the second material layer 135 near the substrate 11 and is in the same layer as the first material layer 134. The thickness of the third material layer 136 is less than the thickness of the first material layer 134.

[0174] That is, in these embodiments, the third material layer 136 may be a material layer of the first material or the third material that remains in the area where at least one second light-emitting device 13B is located after exposure and development. In this case, the material of the third material layer 136 is different from the material of the first material layer 134.

[0175] Specifically, when the material of the first thin film 10 includes the first material, the material of the third material layer 136 is generated by the first material under light radiation in the first band, that is, the material of the third material layer 136 is the second material. When the material of the first thin film 10 includes the third material, the first material is generated by the third material under light radiation in the second band, and the material of the third material layer 136 is still the third material.

[0176] Here, taking the carrier transport layer 300 and the first material containing zinc oxide as examples, the carrier transport layer 300 containing ethanolamine as a ligand, and the first material and the first luminescent material containing 2-aminoethanethiol as examples, the first material layer 134 can be generated by the third material under the light radiation of the second band. In this case, the ligands contained in the materials of the first thin film 10 and the second thin film 20 can both be 2-(Boc-amino)ethanethiol, abbreviated as Boc. In practical applications, after adding a photoacidifying agent (such as 2,4-bis(trichloromethyl)-6-p-methoxystyryl-S-triazine, PAG) to the first thin film 10 and the second thin film 20, the following steps are taken: Ultraviolet (UV) light is used to irradiate the portions of the first thin film 10 and the second thin film 20 located in the region where the first light-emitting device 13A is located. Under the light, the portions of the first thin film 10 and the second thin film 20 located in the region where the first light-emitting device 13A is located lose Boc groups and become 2-aminoethanethiol. This changes the polarity and solubility of the portions of the first thin film 10 and the second thin film 20 located in the region where the first light-emitting device 13A is located. At this time, a developing solution with good solubility for Boc groups, such as chloroform, toluene, or tetrahydrofuran, can be used to remove the material whose ligands are still Boc without UV irradiation, thereby obtaining the first material layer 134 and the first light-emitting pattern 133a_1.

[0177] Therefore, the ligand contained in the material of the first material layer 134 is 2-aminoethanethiol, and the ligand contained in the material of the third material layer 136 is Boc.

[0178] The reaction equation of 2-(Boc-amino)ethanethiol under light irradiation can be referred to the above description and will not be repeated here.

[0179] Experiments revealed that, without the first material layer 134, if the second thin film 20 is directly formed on the carrier transport layer 300, during subsequent development, due to the interaction between the portion of the second thin film 20 located outside the region where the first light-emitting device 13A is located and the carrier transport layer 300 (ZnO (ethanolamine ligand)), residues of the second thin film 20 located outside the region where the first light-emitting device 13A is located will remain on the carrier transport layer 300. However, by adding a ZnO-Boc layer with the same photosensitive ligand between the carrier transport layer 300 and the quantum dot light-emitting material, the ZnO-Boc layer and the quantum dot light-emitting material can be formed as a whole on the carrier transport layer 300. After development, the substance remaining on the carrier transport layer 300 will be ZnO-Boc instead of the quantum dot light-emitting material. Although the ZnO-Boc layer with the photosensitive ligand will also have residues, ZnO-Boc itself will not affect the light emission.

[0180] Of course, the above is just an example, showing the case where the ligands contained in the materials of the first film 10 and the second film 20 are both 2-(Boc-amino)ethanethiol. Those skilled in the art will understand that the ligands contained in the materials of the first film 10 and the second film 20 can be any ligand whose solubility can change under light.

[0181] For example, in some embodiments, the ligands contained in the materials of the first film 10 and the second film 20 may be mono[2-[(2-methacryloyl)oxy]ethyl] succinate (MMES). In this case, the material of the first film may be a complex of zinc oxide and MMES, referred to here as ZnO-MMES, and the material of the second film may be a complex of quantum dots and MMES, referred to here as QD-MMES. Such ligands have the following characteristics: one end has double bonds, triple bonds, acrylate bonds, ethylene oxide, or other groups for photocrosslinking, and the other end has coordinating groups: mercapto, carboxyl, amino. In application, (2,4,6-trimethylbenzoyl)diphenylphosphine oxide (TPO) is used as a photoinitiator. The free radicals generated by TPO under light irradiation initiate the cross-linking of the terminal double bonds of MMES ligands, thereby changing the solubility. At this time, in the subsequent development process, propylene glycol methyl ether acetate (PMA) can be used as a developer to wash away the uncross-linked ZnO-MMES and QD-MMES, while retaining the cross-linked ZnO-MMES and QD-MMES products after photo-irradiation. The first material layer 134 and the first luminescent pattern 133a_1 can also be formed.

[0182] Here, only an example of the first material layer 134 having an electron transport function is shown. Those skilled in the art will understand that the same applies when the first material layer 134 has a hole transport function.

[0183] Specifically, taking the first material layer 134 having hole transport function as an example, the metal nano-ions contained in the material of the charge carrier transport layer 300 and the metal nano-ions contained in the material of the first material layer 134 can both be nickel oxide. In this case, the material of the first thin film 10 can be a complex of nickel oxide and the above-mentioned photosensitive ligand. The specific coordination method and patterning process are similar to those of the first material layer 134 having electron transport function, and will not be described in detail here.

[0184] Similar to how the first or third material may leave residues in areas other than the area where the first light-emitting device 13A is located, when the second material layer 135 and the second light-emitting pattern 133a_2 are fabricated, the fourth or sixth material may also leave residues in areas other than the area where the second light-emitting device 13B is located. For details, please refer to the description of the first or third material leaving residues in areas other than the area where the first light-emitting device 13A is located, which will not be repeated here.

[0185] It should be noted that the ligands contained in the material of the second material layer 135 may be the same as or different from the ligands contained in the material of the first material layer 134 and the material of the first luminescent pattern 133a_1, and no specific limitation is made here.

[0186] For example, the ligands contained in the material of the second material layer 135 can be the same as those contained in the material of the first material layer 134 and the first luminescent pattern 133a_1, such as 2-aminoethanethiol. Alternatively, the ligands contained in the material of the second material layer 135 can be different from those contained in the material of the first material layer 134 and the first luminescent pattern 133a_1. For example, if the ligands contained in the material of the first material layer 134 and the first luminescent pattern 133a_1 are both 2-aminoethanethiol, the ligands contained in the material of the second material layer 135 and the second luminescent pattern 133a_2 can both be products of MMES irradiation, as long as the first material layer 134 and the first luminescent pattern 133a_1 are not removed during the process of obtaining the second material layer 135 and the second luminescent pattern 133a_2 through exposure and development.

[0187] To prevent the first material layer 134 and the first luminescent pattern 133a_1 from being removed during subsequent development, the ligands contained in the material of the second material layer 135 can be the same as those contained in the material of the first material layer 134 and the material of the first luminescent pattern 133a_1, such as 2-aminoethanethiol. In this case, the developing solution is also the same, so the first material layer 134 and the first luminescent pattern 133a_1 will not be removed.

[0188] In some embodiments, such as Figure 5A As shown, at least one first light-emitting device 13A further includes a fourth material layer 137, which is disposed on the side of the light-emitting pattern 133a included in the at least one first light-emitting device 13A away from the substrate 11 and is in contact with the light-emitting pattern 133a included in the at least one first light-emitting device 13A. The thickness d4 of the fourth material layer 137 is less than the thickness d2 of the second material layer 135.

[0189] In these embodiments, the fourth material layer 137 may be a material layer of the fourth or sixth material that remains in the area where at least one first light-emitting device 13A is located after exposure and development. In this case, the material of the fourth material layer 137 is different from the material of the second material layer 135, and the thickness d4 of the fourth material layer 137 is less than the thickness d2 of the second material layer 135.

[0190] Specifically, the ligands contained in the material of the second material layer 135 are the same as those contained in the material of the first material layer 134 and the material of the first luminescent pattern 133a_1, for example, 2-aminoethanethiol. The ligand contained in the material of the second material layer 135 is 2-aminoethanethiol, while the ligand contained in the material of the fourth material layer 137 is Boc.

[0191] In some embodiments, such as Figure 5E As shown, the plurality of light-emitting devices 13 further includes: at least one third light-emitting device 13C, and at least one third light-emitting device 13C further includes: a fifth material layer 138, the fifth material layer 138 being disposed on the side of the light-emitting pattern 133a (which may also be referred to herein as the third light-emitting pattern 133a_3) included in the at least one third light-emitting device 13C near the substrate 11, and in contact with the light-emitting pattern 133a included in the at least one third light-emitting device 13C. The material of the light-emitting pattern 133a included in the at least one third light-emitting device 13C includes: a third light-emitting material. The material of the fifth material layer 138 includes: a seventh material, the seventh material being capable of generating an eighth material under light radiation in the fifth band, the seventh material and the third light-emitting material having different solubilities in the same solvent as the eighth material, or the seventh material being generated by a ninth material under light radiation in the sixth band, the seventh material and the third light-emitting material having different solubilities in the same solvent as the ninth material.

[0192] In these embodiments, at least one third light-emitting device 13C can be a blue light-emitting device, and the third light-emitting material can be a blue quantum dot light-emitting material. Similar to the red and green quantum dot light-emitting materials mentioned above, when the third light-emitting pattern 133a_3 is formed on the substrate 11 on which the second material layer 135 and the second light-emitting pattern 133a_2 are formed, the problem of residual blue quantum dot light-emitting material in areas other than the area where the third light-emitting device 13C is located, causing color mixing, can also be solved by introducing a seventh or ninth material as a photoresist layer. For details, please refer to the description of introducing a fourth or sixth material as a photoresist layer, which will not be repeated here.

[0193] Taking at least one first light-emitting device 13A as an example, which also includes a carrier transport layer 300, and a first material with carrier transport function, the first material is generated by a third material under light radiation in the second band. The third material, namely zinc oxide material with Boc as ligand, has an interaction force with the material of the carrier transport layer. In the case of removing the portion of the first film 10 located in the area other than the area where at least one first light-emitting device 13A is located by subsequent development, the portion of the first film 10 located in the area other than the area where at least one first light-emitting device 13A is located cannot be completely removed, but a small amount of residue remains. The first film 10 will also form residue in the area where at least one third light-emitting device 13C is located.

[0194] For example, in some embodiments, such as Figure 5E As shown, at least one third light-emitting device 13C further includes a sixth material layer 139, which is disposed on the side of the fifth material layer 138 near the substrate 11 and is in the same layer as the first material layer 134. The thickness d6 of the sixth material layer 139 is less than the thickness d1 of the first material layer 134.

[0195] In these embodiments, the sixth material layer 139 may be a material layer of the first material or the third material that remains in the area where at least one third light-emitting device 13C is located after exposure and development. In this case, the material of the sixth material layer 139 is different from the material of the first material layer 134.

[0196] Specifically, taking the first material layer 134 as an example where the ligand contained in the material is 2-aminoethanethiol, the sixth material layer 139 can contain the ligand Boc. In this case, the material of the sixth material layer 139 is the same as the material of the third material layer 136.

[0197] Similar to how the first or third material may leave residues in the area where the third light-emitting device 13C is located, the fourth or sixth material may also leave residues in the area where the third light-emitting device 13C is located when the second material layer 135 and the second light-emitting pattern 133a_2 are fabricated.

[0198] For example, in some embodiments, such as Figure 5E As shown, at least one third light-emitting device 13C further includes a seventh material layer 140, which is disposed on the side of the fifth material layer 138 near the substrate 11 and in contact with the fifth material layer. The thickness d7 of the seventh material layer 140 is less than the thickness d2 of the second material layer 135.

[0199] In these embodiments, the seventh material layer 140 may be a material layer of the fourth or sixth material that remains in the area where at least one third light-emitting device 13C is located after exposure and development. In this case, the material of the seventh material layer 140 is different from the material of the second material layer 135, and the thickness d7 of the seventh material layer 140 is less than the thickness d2 of the second material layer 135.

[0200] Specifically, taking the second material layer 135 as an example where the ligand contained in the material is 2-aminoethanethiol, the seventh material layer 140 can contain the ligand Boc. In this case, the material of the seventh material layer 140 can be the same as the material of the third material layer 136.

[0201] Similar to how the first or third material may leave residues in areas other than the area where the first light-emitting device 13A is located, when the fifth material layer 138 and the third light-emitting pattern 133a_2 are fabricated, the seventh or ninth material may also leave residues in areas other than the area where the third light-emitting device 13C is located. For details, please refer to the description of the first or third material leaving residues in areas other than the area where the first light-emitting device 13a is located, which will not be repeated here.

[0202] Furthermore, similarly, the ligands contained in the materials of the second material layer 135 and the second luminescent pattern 133a_2 may be the same as or different from the ligands contained in the materials of the first material layer 134 and the first luminescent pattern 133a_1. Likewise, the ligands contained in the materials of the fifth material layer 138 and the third luminescent pattern 133a_3 may be the same as or different from the ligands contained in the materials of the first material layer 134 and the first luminescent pattern 133a_1, as well as the ligands contained in the materials of the second material layer 135 and the second luminescent pattern 133a_2. No specific limitation is made here, as long as the first material layer 134 and the first luminescent pattern 133a_1, as well as the second material layer 135 and the second luminescent pattern 133a_2, are not removed during the subsequent formation of the fifth material layer 138 and the third luminescent pattern 133a_3.

[0203] To prevent the removal of the first material layer 134 and the first luminescent pattern 133a_1, as well as the second material layer 135 and the second luminescent pattern 133a_2 during subsequent development, the ligands contained in the materials of the fifth material layer 138 and the third luminescent pattern 133a_3 are the same as those contained in the materials of the first material layer 134 and the first luminescent pattern 133a_1, as well as the ligands contained in the materials of the second material layer 135 and the second luminescent pattern 133a_2.

[0204] For example, if the ligands contained in the material of the first material layer 134 and the material of the first luminescent pattern 133a_1, as well as the ligands contained in the material of the second material layer 135 and the material of the second luminescent pattern 133a_2, all include 2-aminoethanethiol, the ligands contained in the material of the fifth material layer 138 and the material of the third luminescent pattern 133a_3 may also include 2-aminoethanethiol.

[0205] In some embodiments, at least one first light-emitting device 13A further includes an eighth material layer 141, which is disposed on the side of the second material layer 135 away from the substrate 11 and is co-layered with the fifth material layer 138. The thickness d8 of the eighth material layer 141 is less than the thickness d5 of the fifth material layer 138.

[0206] In these embodiments, the eighth material layer 141 may be a material layer of the seventh or ninth material that remains in the area where at least one first light-emitting device 13A is located after exposure and development. In this case, the material of the eighth material layer 141 is different from the material of the fifth material layer 138, and the thickness d8 of the eighth material layer 141 is less than the thickness d5 of the fifth material layer 138.

[0207] Specifically, the ligands contained in the materials of the fifth material layer 138 and the third luminescent pattern 133a_1 are the same as those contained in the materials of the first material layer 134 and the first luminescent pattern 133a_1, as are the ligands contained in the materials of the second material layer 135 and the second luminescent pattern 133a_2, for example, all of which are 2-aminoethylthiocyanate. The material of the eighth material layer 141 can be Boc.

[0208] In some embodiments, such as Figure 5E As shown, at least one second light-emitting device 13B further includes a ninth material layer 142, which is disposed on the side of the light-emitting pattern 133a included in the at least one second light-emitting device 13B away from the substrate 11, and is co-layered with the fifth material layer 138. The thickness d9 of the ninth material layer 142 is less than the thickness d5 of the fifth material layer 138.

[0209] In these embodiments, the ninth material layer 142 may be the seventh material or the material layer of the ninth material remaining in the area where at least one second light-emitting device 13B is located after exposure and development. In this case, the material of the ninth material layer 142 is different from the material of the fifth material layer 138, and the thickness d9 of the ninth material layer 141 is less than the thickness d5 of the fifth material layer 138.

[0210] Specifically, the ligands contained in the materials of the fifth material layer 138 and the third luminescent pattern 133a_3 are the same as those contained in the materials of the first material layer 134 and the first luminescent pattern 133a_1, as are the ligands contained in the materials of the second material layer 135 and the second luminescent pattern 133a_2, for example, 2-aminoethanethiol. The material of the ninth material layer 142 can be Boc.

[0211] At this time, the material of the ninth material layer 142 is the same as the material of the eighth material layer 141.

[0212] In some embodiments, such as Figure 5E As shown, for light-emitting devices 13 of different colors, such as the first light-emitting device 13A, the second light-emitting device 13B, and the third light-emitting device 13C, when the material layer (such as the first material layer 134 included in the first light-emitting device 13A, the second material layer 135 included in the second light-emitting device 13B, and the fifth material layer 138 included in the third light-emitting device 13C) in contact with the light-emitting pattern contained in each light-emitting device 13 and located on the side of the light-emitting pattern 133a contained in each light-emitting device 13 close to the substrate 11, all of which contain metal nano-ions and ligands bound to the metal nano-ions, the metal nano-ions contained in each material layer (i.e., the first material layer 134, the second material layer 135, and the fifth material layer 138) are the same, such as zinc oxide, and at least one material layer (such as the first material layer 134, the second material layer 135, or the fifth material layer 138) contains metal nano-ions that are doped with other metals.

[0213] The other metals may be at least one metal other than Zn, such as magnesium (Mg), cobalt (Co), nickel (Ni), gallium (Ga), aluminum (Al), calcium (Ca), zirconium (Zr), tungsten (W), lithium (Li), titanium (Ti), tantalum (Ta), tin (Sn), hafnium (Hf), silicon (Si), barium (Ba), or combinations thereof.

[0214] The specific doping ratio can be 0.01≤x≤0.3, for example, 0.01≤x≤0.2, where x is the subscript of Mg in ZnMgxO.

[0215] In some embodiments, the metal nano-ions contained in each material layer (i.e., the first material layer 134, the second material layer 135, and the fifth material layer 138) are all doped with magnesium, and the amount of magnesium doped in the metal nano-ions contained in each material layer is different.

[0216] In some embodiments, the amount of magnesium doped in the first material layer 134 is 5% (by mass), the amount of magnesium doped in the second material layer 135 is 10% (by mass), and the amount of magnesium doped in the fifth material layer 138 is 15% (by mass).

[0217] In these embodiments, the corresponding device structure can be: an electron transport layer ZnO and an interface layer (i.e., a first material layer 134, a second material layer 135, or a fifth material layer 138). The material of the interface layer can be ZnMgO-NH2-SH. The number of ligands in the interface layer is greater than the number of ligands in the electron transport layer. By doping the interface layer with metallic magnesium, the balance of electron and hole injection can be regulated.

[0218] In some embodiments, the carrier transport layer 300 may also be doped with metal elements, but the doping ratio of the carrier transport layer 300 is less than that of the interface layer.

[0219] Some embodiments of this disclosure provide a method for preparing a light-emitting substrate, including:

[0220] A plurality of light-emitting devices 13 are formed on a substrate 11. Each light-emitting device 13 includes a first electrode 131, a second electrode 132, and a light-emitting pattern 133a formed between the first electrode 131 and the second electrode 132, wherein the first electrode 131 is closer to the substrate 11 than the second electrode 132. The plurality of light-emitting devices 13 include at least one first light-emitting device 13A, and the at least one first light-emitting device 13A further includes a first material layer 134, which is formed on the side of the light-emitting pattern 133a (i.e., the first light-emitting pattern 133a_1) included in the at least one first light-emitting device 13A that is close to the substrate 11 and is in contact with the light-emitting pattern 133a included in the at least one first light-emitting device 13A. Wherein, the material of the light-emitting pattern 133a included in at least one first light-emitting device 13A includes: a first light-emitting material; the material of the first material layer includes a first material, the first material is capable of generating a second material under light radiation in a first wavelength band, the first material and the first light-emitting material have different solubilities in the same solvent as the second material, or, the first material is generated by a third material under light radiation in a second wavelength band, the first material and the first light-emitting material have different solubilities in the same solvent as the third material.

[0221] The substrate 11 can be a substrate on which pixel driving circuitry is formed. The first light-emitting device 13A can be a red light-emitting device, and in this case, the first light-emitting material can be a red quantum dot light-emitting material.

[0222] Wherein, according to the first material layer mentioned above, the material includes a first material, the first material can generate a second material under light radiation in the first band, or the first material is generated under light radiation in the second band by a third material, it can be known that the first luminescent material is patterned by using the first material as a positive photoresist, or the first luminescent material is patterned by using the third material as a negative photoresist.

[0223] In the following embodiments, the preparation method of the first material layer and the first luminescent pattern will be described using the first luminescent material patterned with a third material as a negative photoresist as an example.

[0224] In some embodiments, the first material is generated by the third material under light radiation in the second wavelength band, and the solubility of the first material and the first light-emitting material in the first solvent is less than the solubility of the third material in the first solvent. At least one first light-emitting device 13A is formed, as shown below. Figure 6A As shown, it includes:

[0225] S11. A first thin film 10 and a second thin film 20 are sequentially formed on a substrate 11. The material of the first thin film 10 includes a third material C3, and the material of the second thin film 20 includes a first luminescent material. Alternatively, the material of the second thin film 20 includes a tenth material, which is capable of generating the first luminescent material under light radiation in the second wavelength band.

[0226] In some embodiments, both the first material C1 and the first luminescent material include: metal nano-ions and ligands bound to the metal nano-ions. The ligands contained in the first material C1 and the ligands contained in the first luminescent material may be the same or different, and if the ligands contained in the first material C1 and the ligands contained in the first luminescent material are different, the ligands contained in the first luminescent material are insoluble in the first solvent.

[0227] In these embodiments, taking the example that the ligands contained in the first material C1 and the first luminescent material are the same, the ligands contained in the third material C3 and the tenth material can both be photosensitive ligands. By irradiating the portions of the first thin film 10 and the second thin film 20 located in the region where the first luminescent device 13A is located with light of the second band, the photosensitive ligands contained in the third material C3 and the tenth material can be changed, thereby obtaining the first material C1 and the first luminescent material. In this process, since the ligands contained in the third material C3 and the tenth material are the same, when removing the portions of the first thin film 10 and the second thin film 20 located in the regions other than the region where the first luminescent device 13A is located, the portions of the first thin film 10 and the second thin film 20 located in the regions other than the region where the first luminescent device 13A is located can be removed as a whole, thereby completely removing the portions of the second thin film 20 located in the regions other than the region where the first luminescent device 13A is located, and thus improving the patterning effect.

[0228] Taking the case where the ligands contained in the first material C1 and the first luminescent material are different, and the ligands contained in the third material C3 can be photosensitive ligands, there are two possible scenarios. First, the material of the second film 20 includes the first luminescent material, and the ligands contained in the first luminescent material are non-photosensitive ligands. Second, the material of the second film 20 includes a tenth material, and the ligands contained in the tenth material can be photosensitive ligands, and the ligands contained in the tenth material are different from those contained in the third material. Regardless of the scenario, the ligands contained in the first luminescent material are insoluble in the first solvent.

[0229] In some embodiments, the photosensitive ligand includes a ligand capable of undergoing a decomposition or cross-linking reaction under light radiation in the second wavelength band.

[0230] For example, photosensitive ligands can be compounds containing unsaturated groups or epoxy groups. After light irradiation, the unsaturated groups or epoxy groups undergo a cross-linking reaction, thereby altering the solubility. Alternatively, photosensitive ligands can have amide or ester bonds, and after light irradiation, the acyl groups are removed, thus changing the solubility.

[0231] In some embodiments, the photosensitive ligand includes either 2-(Boc-amino)ethanethiol (Boc for short) or MMES (mono[2-[(2-methyl-acryloyl)oxy]ethyl] succinate).

[0232] When the photosensitive ligand includes 2-(Boc-amino)ethanethiol, in application, under ultraviolet (UV) irradiation in the presence of a photoacidifier (such as 2,4-bis(trichloromethyl)-6-p-methoxystyryl-S-triazine, PAG), 2-(Boc-amino)ethanethiol can lose its Boc group to become 2-aminoethanethiol, thereby changing its solubility. When the photosensitive ligand includes MMES, such ligands have the following characteristics: one end has double bonds, triple bonds, acrylate bonds, ethylene oxide, or other groups for photocrosslinking, and the other end has coordinating groups such as thiol, carboxyl, or amino groups. In application, (2,4,6-trimethylbenzoyl)diphenylphosphine oxide (TPO) is used as a photoinitiator. The free radicals generated by TPO under light irradiation initiate the crosslinking of the terminal double bonds of the MMES ligand, thereby changing its solubility.

[0233] The reaction equation for 2-(Boc-amino)ethanethiol under light irradiation can be found in the above description and will not be repeated here.

[0234] S12. The first thin film 10 and the second thin film 20 located in the first region X1 are irradiated with light of the second band, so that the first material is generated in the first region X1 of the first thin film 10, and the first region X1 is the region where at least one first light-emitting device 13A is located.

[0235] For example, taking the third material C3 as a material combining zinc oxide and 2-(Boc-amino)ethanethiol (abbreviated as Boc), under the light radiation of the second band, the portion of the first thin film 10 located in the first region X1 generates a material combining zinc oxide and 2-aminoethanethiol.

[0236] S13. The first solvent is used to dissolve the portion of the first film 10 located in the second region X2, and the portion of the first film 10 located in the second region X2 is removed. The portion of the second film 20 located in the second region X2 is also removed, resulting in the first material layer 134 and the first light-emitting pattern 133a_1. The second region X2 is the remaining region among the plurality of light-emitting devices 13, excluding the region where at least one of the first light-emitting devices 13A is located.

[0237] The first solvent is the developer. Since the solubility of the first material C1 and the first luminescent material in the first solvent is less than that of the third material C3 in the first solvent, when the first solvent is used to dissolve the portion of the first film 10 and the second film 20 located in the second region X2, the portion of the first film 10 and the second film 20 located in the first region X1 can be retained, thereby realizing the patterning of the first luminescent material.

[0238] Compared to the direct photolithography method used in related technologies for patterning quantum dot luminescent materials, this method avoids the formation of residual red quantum dot luminescent materials in areas where other colors of luminescent devices are located, thus solving the problem of color mixing in quantum dot luminescent materials. Furthermore, compared to the use of a sacrificial layer in related technologies for patterning quantum dot luminescent materials, by selecting materials that allow the first luminescent material and the portion of the first material C1 or the third material C3 used as the sacrificial layer to have different solubilities in the same solvent, the removal of the first luminescent material during subsequent development can be avoided, thus solving the problem of quantum dot luminescent material loss in related technologies.

[0239] In some embodiments, the plurality of light-emitting devices 13 further includes at least one second light-emitting device 13B. The at least one second light-emitting device 13B further includes a second material layer 135, which is disposed on the side of the light-emitting pattern 133a_2 included in the at least one second light-emitting device 13B near the substrate 11, and the second material layer 135 is in contact with the light-emitting pattern 133a_2 included in the at least one second light-emitting device 13B. The light-emitting pattern 133a included in the at least one second light-emitting device 13B includes a second light-emitting material. The material of the second material layer 135 includes a fourth material, which is capable of generating a fifth material under light radiation in the third wavelength band. The fourth material and the second light-emitting material have different solubilities in the same solvent as the fifth material. Alternatively, the fourth material is generated by a sixth material under light radiation in the fourth wavelength band, and the fourth material and the second light-emitting material have different solubilities in the same solvent as the sixth material.

[0240] The second light-emitting device 13 can be a green light-emitting device, and the second light-emitting material can be a green quantum dot light-emitting material.

[0241] Similar to the patterning formation of the first luminescent material using a first material as a positive photoresist or using a third material as a negative photoresist, the second luminescent material can be patterned using a fourth material as a positive photoresist or using a sixth material as a negative photoresist.

[0242] In the following embodiments, the preparation method of the second material layer and the second luminescent pattern will be described using the second luminescent material patterned with the sixth material as a negative photoresist as an example.

[0243] In some embodiments, the fourth material is generated by the sixth material under light radiation in the fourth wavelength band, and the solubility of the fourth material and the second light-emitting material in the second solvent is less than the solubility of the sixth material in the second solvent. At least one second light-emitting device 13B is formed, as shown below. Figure 6B As shown, it includes:

[0244] S21. A third thin film 30 and a fourth thin film 40 are sequentially formed on a substrate 11 on which a first material layer 134 and a first light-emitting pattern 133a_1 are formed. The material of the third thin film 30 includes a sixth material, and the material of the fourth thin film 40 includes a second light-emitting material. Alternatively, the material of the fourth thin film 40 includes an eleventh material, and the eleventh material is capable of generating the second light-emitting material under light radiation in the fourth band.

[0245] The fourth material can be a material with electron transport function, such as a material combining zinc oxide and 2-aminoethanethiol. In this case, the sixth material can be a material combining zinc oxide and 2-(Boc-amino)ethanethiol (abbreviated as Boc). Under the light radiation of the fourth band, Boc can remove the acyl group to generate 2-aminoethanethiol, thereby obtaining the fourth material.

[0246] In some embodiments, both the fourth material and the second luminescent material include: metal nano-ions and ligands bound to the metal nano-ions. The ligands contained in the fourth material and the ligands contained in the second luminescent material may be the same or different, and if the ligands contained in the fourth material and the ligands contained in the second luminescent material are different, the ligands contained in the second luminescent material are insoluble in the second solvent.

[0247] In these embodiments, taking the example that the ligands contained in the fourth material and the second luminescent material are the same, the ligands contained in the sixth material and the ligands contained in the eleventh material can both be photosensitive ligands. By irradiating the portions of the third film 30 and the fourth film 40 located in the region where the second luminescent device 13B is located with light of the fourth band, the photosensitive ligands contained in the sixth material and the eleventh material can be changed, thereby obtaining the fourth material and the second luminescent material. In this process, since the ligands contained in the sixth material and the eleventh material are the same, when removing the portions of the third film 30 and the fourth film 40 located in the region other than the region where the second luminescent device 13B is located, the portions of the third film 30 and the fourth film 40 located in the region other than the region where the second luminescent device 13B is located can be removed as a whole, thereby completely removing the portions of the fourth film 40 located in the region other than the region where the second luminescent device 13B is located, and thus improving the patterning effect.

[0248] Taking the case where the ligands contained in the fourth material and the second luminescent material are different, and the ligands contained in the sixth material can be photosensitive ligands, there are two possible scenarios. First, the material of the fourth film 40 includes the second luminescent material, and the ligands contained in the second luminescent material are non-photosensitive ligands. Second, the material of the fourth film 40 includes an eleventh material, and the ligands contained in the eleventh material can be photosensitive ligands, and the ligands contained in the eleventh material are different from those contained in the sixth material. Regardless of the scenario, the ligands contained in the second luminescent material are insoluble in the second solvent.

[0249] In some embodiments, the photosensitive ligand includes a ligand capable of undergoing a decomposition or cross-linking reaction under fourth-band light radiation.

[0250] For example, photosensitive ligands can be compounds containing unsaturated groups or epoxy groups. After light irradiation, the unsaturated groups or epoxy groups undergo a cross-linking reaction, thereby altering the solubility. Alternatively, photosensitive ligands can have amide or ester bonds, and after light irradiation, the acyl groups are removed, thus changing the solubility.

[0251] In some embodiments, the photosensitive ligand includes either 2-(Boc-amino)ethanethiol (Boc for short) or MMES (mono[2-[(2-methyl-acryloyl)oxy]ethyl] succinate).

[0252] For specific applications, please refer to the above description, which will not be repeated here.

[0253] S22. The third thin film 30 and the fourth thin film 40 located in the third region X3 are irradiated with light of the fourth band, so that the third thin film 30 located in the third region X3 generates the fourth material, and the third region X3 is the region where at least one second light-emitting device 13B is located.

[0254] For example, taking the sixth material as a combination of zinc oxide and 2-(Boc-amino)ethanethiol (abbreviated as Boc), under the light radiation of the fourth band, the third film 30 in the third region X3 generates a material combining zinc oxide and 2-aminoethanethiol.

[0255] S23. The third film 30 and the fourth film 40 located in the fourth region X4 are dissolved using the second solvent to remove the third film 30 and the fourth film 40 located in the fourth region X4, and the fourth film 40 located in the fourth region X4 is also removed to obtain the second material layer 135 and the second light-emitting pattern 133a_2. The fourth region X4 is the remaining region among the plurality of light-emitting devices 13 except for the region where at least one second light-emitting device 13B is located.

[0256] The second solvent is the developer. Since the solubility of the fourth material and the second luminescent material in the second solvent is less than that of the sixth material in the second solvent, when the second solvent is used to dissolve the portion of the third film 30 and the fourth film 40 located in the fourth region X4, the portion of the third film 30 and the fourth film 40 located in the third region X3 can be retained, thereby realizing the patterning of the second luminescent material.

[0257] Compared to the direct photolithography method used in related technologies for patterning quantum dot luminescent materials, this method avoids the formation of residual green quantum dot luminescent materials in areas where other colors of luminescent devices are located. Furthermore, compared to the use of sacrificial layers in related technologies for patterning quantum dot luminescent materials, by selecting materials that allow the second luminescent material and the portion of the fourth or sixth material used as a sacrificial layer to have different solubilities in the same solvent, the removal of the second luminescent material during subsequent development can be avoided, thus solving the problem of quantum dot luminescent material loss in related technologies.

[0258] In some embodiments, the plurality of light-emitting devices 13 further include: at least one third light-emitting device 13C, and the at least one third light-emitting device 13C further includes: a fifth material layer 138, the fifth material layer 138 being disposed on the side of the light-emitting pattern 133a (i.e., the third light-emitting pattern 133a_3) included in the at least one third light-emitting device 13C near the substrate 11, and in contact with the light-emitting pattern 133a included in the at least one third light-emitting device 13C. The material of the light-emitting pattern 133a included in the third light-emitting device 13C includes a third light-emitting material, and the material of the fifth material layer 138 includes: a seventh material, the seventh material being capable of generating an eighth material under light radiation in the fifth band, the seventh material having different solubility than the third light-emitting material and the eighth material in the same solvent, or the seventh material being generated by a ninth material under light radiation in the sixth band, the seventh material having different solubility than the third light-emitting material and the ninth material in the same solvent.

[0259] Here, we will still take the example of the seventh material being generated by the ninth material under the light radiation of the sixth band, and the solubility of the seventh material and the third luminescent material in the third solvent being less than the solubility of the ninth material in the third solvent, to explain the preparation method of the fifth material layer 138 and the third luminescent pattern 133a_3.

[0260] Specifically, in some embodiments, at least one third light-emitting device 13C is formed, such as Figure 6C As shown, it includes:

[0261] S31. A fifth thin film 50 and a sixth thin film 60 are sequentially formed on a substrate 11 on which a second material layer 135 and a second light-emitting pattern 133a_2 are formed. The material of the fifth thin film 50 includes a ninth material, and the material of the sixth thin film 60 includes a third light-emitting material. Alternatively, the material of the sixth thin film 60 includes a twelfth material, and the twelfth material is capable of generating the third light-emitting material under light radiation in the sixth band.

[0262] The ninth material example can also be a material with electron transport function, and the third luminescent material example can be a blue quantum dot luminescent material.

[0263] In some embodiments, both the seventh material and the third luminescent material include: metal nano-ions and ligands bound to the metal nano-ions. The ligands contained in the seventh material and the ligands contained in the third luminescent material may be the same or different, and if the ligands contained in the seventh material and the ligands contained in the third luminescent material are different, the ligands contained in the third luminescent material are insoluble in the third solvent.

[0264] In these embodiments, taking the example that the ligands contained in the seventh material and the third luminescent material are the same, the ligands contained in the ninth material and the ligands contained in the twelfth material can both be photosensitive ligands. By irradiating the portions of the fifth film 50 and the sixth film 60 located in the region where the third luminescent device 13C is located with light of the sixth band, the photosensitive ligands contained in the ninth and twelfth materials can be changed, thereby obtaining the seventh material and the third luminescent material. Since the ligands contained in the ninth material and the twelfth material are the same, when removing the portions of the fifth film 50 and the sixth film 60 located in the region other than the region where the third luminescent device 13C is located, the portions of the fifth film 50 and the sixth film 60 located in the region other than the region where the third luminescent device 13C is located can be removed as a whole, thereby completely removing the portions of the sixth film 60 located in the region other than the region where the third luminescent device 13C is located, and thus improving the patterning effect.

[0265] Taking the case where the ligands contained in the seventh material and the third luminescent material are different, and the ligands contained in the ninth material can be photosensitive ligands, there are two possible scenarios. First, the material of the sixth film 60 includes the third luminescent material, and the ligands contained in the third luminescent material are non-photosensitive ligands. Second, the material of the sixth film 60 includes the twelfth material, and the ligands contained in the twelfth material can be photosensitive ligands, and the ligands contained in the twelfth material are different from those contained in the ninth material. Regardless of the scenario, the ligands contained in the third luminescent material are insoluble in the third solvent.

[0266] In some embodiments, the photosensitive ligand includes a ligand capable of undergoing a decomposition or cross-linking reaction under sixth-band light radiation.

[0267] For example, photosensitive ligands can be compounds containing unsaturated groups or epoxy groups. After light irradiation, the unsaturated groups or epoxy groups undergo a cross-linking reaction, thereby altering the solubility. Alternatively, photosensitive ligands can have amide or ester bonds, and after light irradiation, the acyl groups are removed, thus changing the solubility.

[0268] In some embodiments, the photosensitive ligand includes either 2-(Boc-amino)ethanethiol (Boc for short) or MMES (mono[2-[(2-methyl-acryloyl)oxy]ethyl] succinate).

[0269] For specific application details, please refer to the above description, which will not be repeated here.

[0270] S32. The fifth thin film 50 and the sixth thin film 60 located in the fifth region X5 are irradiated with light of the sixth band, so that the fifth thin film 50 located in the fifth region X5 generates the seventh material, and the fifth region X5 is the region where at least one third light-emitting device 13C is located.

[0271] For example, taking the ninth material as a combination of zinc oxide and 2-(Boc-amino)ethanethiol (abbreviated as Boc), under the light radiation of the sixth band, the fifth film 50 in the fifth region X5 generates a material combining zinc oxide and 2-aminoethanethiol.

[0272] S33. The portion of the fifth thin film 50 located in the sixth region X6 is dissolved using a third solvent to remove the portion of the fifth thin film 50 located in the sixth region X6, and the portion of the sixth thin film 60 located in the sixth region X6 is also removed to obtain the fifth material layer 138 and the third light-emitting pattern 133a_3. The sixth region X6 is the remaining region among the multiple light-emitting devices 13 except for the region where at least one third light-emitting device 13C is located.

[0273] The third solvent is the developer. Since the solubility of the seventh material and the third luminescent material in the third solvent is less than that of the ninth material in the second solvent, when the third solvent is used to dissolve the portion of the fifth film 50 and the sixth film 60 located in the sixth region X6, the portion of the fifth film 50 and the sixth film 60 located in the fifth region X5 can be retained, thereby realizing the patterning of the third luminescent material.

[0274] Compared to the direct photolithography method used in related technologies for patterning quantum dot luminescent materials, this method avoids the formation of residual blue quantum dot luminescent materials in areas where other colors of luminescent devices are located. Furthermore, compared to the use of sacrificial layers in related technologies for patterning quantum dot luminescent materials, by selecting materials that allow the third luminescent material to have different solubilities in the same solvent as the sacrificial layer portion of the seventh or ninth material, the removal of the third luminescent material during subsequent development can be avoided, thus solving the problem of quantum dot luminescent material loss in related technologies.

[0275] In summary, by adding a material layer as a photoresist layer before each color of quantum dot luminescent material, the residue of each color of quantum dot luminescent material can be converted into residue of the aforementioned material layer. This solves the problem of color mixing caused by residue of the previous quantum dot luminescent material after the patterning process of the next color of quantum dot luminescent material in related technologies. Compared with the use of sacrificial layers to pattern quantum dot luminescent materials in related technologies, by selecting materials to ensure that the solubility of each layer of quantum dot luminescent material and the portion of the added material layer used as a sacrificial layer are different in the same solvent, it can avoid removing each layer of quantum dot luminescent material during subsequent development. Furthermore, by selecting the materials of the three layers of quantum dot luminescent material and the corresponding material layers, ensuring that the solubility of each layer of quantum dot luminescent material and the portion of each added material layer used as a sacrificial layer are different in the same solvent, it can avoid the problem of the earliest formed quantum dot luminescent material being lost the most during subsequent development.

[0276] Based on the above specific implementation methods, in order to objectively evaluate the technical effects of the technical solution provided in this disclosure, the following verification experiments will be conducted to verify the technical effects of the technical solution provided in this disclosure.

[0277] Verification experiment:

[0278] First, ZnO-Boc and GQD-Boc were prepared via ligand exchange. Then, ZnO (approximately 25 nm thick) and GQD (Green Quantum Dot)-Boc (approximately 30 nm thick) were sequentially spin-coated onto a first white glass substrate. The GQD-Boc was then developed using chloroform, and the UV-Vis absorption spectra of ZnO and ZnO / GQD-Boc / CCl3 were measured. Similarly, ZnO (approximately 25 nm thick), ZnO-Boc (approximately 5 nm thick), and GQD-Boc (approximately 30 nm thick) were sequentially spin-coated onto a second white glass substrate. The ZnO-Boc and GQD-Boc were then developed using chloroform, and the UV-Vis absorption spectra of ZnO / ZnO-Boc and ZnO / ZnO-Boc / GQD-Boc / CCl3 were measured.

[0279] The UV-Vis absorption spectrum of ZnO refers to the UV absorption spectrum of the film obtained after spin-coating ZnO onto the first white glass. The UV-Vis absorption spectrum of ZnO / GQD-Boc / CCl3 refers to the UV absorption spectrum of the film obtained after spin-coating ZnO and GQD-Boc sequentially onto the first white glass and dissolving GQD-Boc with chloroform. The UV-Vis absorption spectrum of ZnO / ZnO-Boc refers to the UV absorption spectrum of the film obtained after spin-coating ZnO and ZnO-Boc sequentially onto the second white glass. The UV-Vis absorption spectrum of ZnO / ZnO-Boc / GQD-Boc / CCl3 refers to the UV absorption spectrum of the film obtained after spin-coating ZnO, ZnO-Boc, and GQD-Boc sequentially onto the second white glass and dissolving ZnO-Boc and GQD-Boc with chloroform.

[0280] The test results of the ultraviolet absorption spectra of the above-mentioned films are as follows: Figure 7 As shown, by Figure 7 It can be seen that, compared with the UV-Vis absorption spectrum of ZnO, the absorption value of ZnO / GQD-Boc / CCl3 in the wavelength range of 450nm~750nm is greater than that of ZnO in the same wavelength range. This indicates that after ZnO is spin-coated directly onto ZnO and dissolved in chloroform, there is a certain amount of GQD-Boc residue on ZnO. Compared to the UV-Vis absorption spectrum of ZnO, ZnO / ZnO-Boc exhibits higher absorption values ​​in the wavelength range of 450 nm to 750 nm. This indicates that a film different from ZnO was spin-coated onto ZnO. Furthermore, based on the UV absorption spectrum of ZnO / ZnO-Boc, it can be seen that the absorption value of ZnO / ZnO-Boc / GQD-Boc / CCl3 in the wavelength range of 450 nm to 750 nm is lower than that of ZnO / ZnO-Boc. Moreover, the UV absorption spectrum of ZnO / ZnO-Boc / GQD-Boc / CCl3 is consistent with that of ZnO / ZnO-Boc. This suggests that while dissolving GQD-Boc with chloroform, a small amount of ZnO-Boc was also washed away, indicating that GQD-Boc leaves no residue on ZnO.

[0281] Meanwhile, when ZnO / GQD-Boc / CCl3 and ZnO / ZnO-Boc / GQD-Boc / CCl3 were irradiated with ultraviolet light, it could be seen that ZnO / GQD-Boc / CCl3 showed a distinct green color, while ZnO / ZnO-Boc / GQD-Boc / CCl3 showed almost no green color.

[0282] In summary, by adding a ZnO-Boc layer, the problem of quantum dot residue in the direct photolithography method used in related technologies can be solved.

[0283] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A light-emitting substrate, comprising: Substrate; Multiple light-emitting devices are disposed on the substrate. Each light-emitting device includes a first electrode, a second electrode, and a light-emitting pattern disposed between the first electrode and the second electrode. The first electrode is closer to the substrate than the second electrode. The plurality of light-emitting devices includes at least one first light-emitting device, and the at least one first light-emitting device further includes: a first material layer, the first material layer being disposed on the side of the light-emitting pattern included in the at least one first light-emitting device close to the substrate, and in contact with the light-emitting pattern included in the at least one first light-emitting device; Wherein, the material of the light-emitting pattern included in the at least one first light-emitting device includes: a first light-emitting material; the material of the first material layer includes: a first material, wherein the first material generates a second material under light radiation in a first wavelength band, wherein the first material and the first light-emitting material have different solubilities in the same solvent as the second material, or, the first material is generated by a third material under light radiation in a second wavelength band, wherein the first material and the first light-emitting material have different solubilities in the same solvent as the third material; Both the first material and the first luminescent material include: metal nano-ions and ligands bound to the metal nano-ions; Wherein, the ligands contained in the first material and the ligands contained in the first luminescent material may be the same or different. If the ligands contained in the first material and the ligands contained in the first luminescent material are the same, the ligands contained in the third material are photosensitive ligands. If the ligands contained in the first material and the ligands contained in the first luminescent material are different, the ligands contained in the first luminescent material are non-photosensitive ligands. The non-photosensitive ligands have different solubilities in the same solvent as the second material, or the non-photosensitive ligands have different solubilities in the same solvent as the third material.

2. The light-emitting substrate according to claim 1, wherein, The electron mobility of the first material is 1×10 -4 cm 2 / V·s~2×10 -3 cm 2 / V·s, and the absolute value of the LUMO energy level of the first material is 3.6eV~4.2eV; or, The hole mobility of the first material is 1×10 -4 cm 2 / V·s~2×10 -3 cm 2 / V·s, and the absolute value of the HOMO energy level of the first material is 5.1eV~6.2eV.

3. The light-emitting substrate according to claim 1, wherein, The at least one first light-emitting device further includes: a carrier transport layer, wherein the carrier transport layer is disposed on the side of the first material layer near the substrate and is in contact with the first material layer; or, The first material layer serves as the carrier transport layer and is in direct contact with the first electrode.

4. The light-emitting substrate according to claim 3, wherein, In the case where the at least one first light-emitting device further includes a carrier transport layer, the thickness of the first material layer is less than the thickness of the carrier transport layer; When the first material layer serves as the carrier transport layer, the thickness of the first material layer is 50 nm to 70 nm.

5. The light-emitting substrate according to claim 3, wherein, In the case where the at least one first light-emitting device further includes a carrier transport layer, and the material of the first material layer has carrier transport function, the thickness of the first material layer is 5nm~20nm, and the thickness of the carrier transport layer is 50~70nm.

6. The light-emitting substrate according to claim 1, wherein, The photosensitive ligands include ligands capable of undergoing decomposition or cross-linking reactions under light irradiation.

7. The light-emitting substrate according to claim 6, wherein, The photosensitive ligands include either 2-(Boc-amino)ethanethiol or MMES.

8. The light-emitting substrate according to any one of claims 1 to 7, wherein, In the case where the at least one first light-emitting device further includes a carrier transport layer, the material of the carrier transport layer includes metal nano-ions and ligands bound to the metal nano-ions, wherein the metal nano-ions contained in the material of the carrier transport layer are the same as or different from the metal nano-ions contained in the first material, and the ligands contained in the material of the carrier transport layer are different from the ligands contained in the first material.

9. The light-emitting substrate according to any one of claims 1 to 7, wherein, The plurality of light-emitting devices further includes: at least one second light-emitting device; The at least one second light-emitting device further includes: a second material layer, wherein the second material layer is disposed on the side of the light-emitting pattern included in the at least one second light-emitting device close to the substrate, and is in contact with the light-emitting pattern included in the at least one second light-emitting device; Wherein, the material of the light-emitting pattern included in the at least one second light-emitting device includes a second light-emitting material, and the material of the second material layer includes: a fourth material, wherein the fourth material is capable of generating a fifth material under light radiation in the third band, and the fourth material and the second light-emitting material have different solubilities in the same solvent as the fifth material, or, the fourth material is generated by a sixth material under light radiation in the fourth band, and the fourth material and the second light-emitting material have different solubilities in the same solvent as the sixth material.

10. The light-emitting substrate according to claim 9, wherein, The at least one second light-emitting device further includes: a third material layer, wherein the third material layer is disposed on the side of the second material layer near the substrate and is in the same layer as the first material layer; The thickness of the third material layer is less than the thickness of the first material layer.

11. The light-emitting substrate according to claim 9, wherein, The at least one first light-emitting device further includes: a fourth material layer, the fourth material layer being disposed on the side of the light-emitting pattern included in the at least one first light-emitting device away from the substrate, and in contact with the light-emitting pattern included in the at least one first light-emitting device; The thickness of the fourth material layer is less than the thickness of the second material layer.

12. The light-emitting substrate according to claim 9, wherein, The plurality of light-emitting devices further includes: at least one third light-emitting device; The at least one third light-emitting device further includes: a fifth material layer, the fifth material layer being disposed on the side of the light-emitting pattern included in the at least one third light-emitting device close to the substrate, and in contact with the light-emitting pattern included in the at least one third light-emitting device; The material of the light-emitting pattern included in the at least one third light-emitting device includes: a third light-emitting material; the material of the fifth material layer includes: a seventh material, the seventh material being capable of generating an eighth material under light radiation in the fifth band, the seventh material and the third light-emitting material having different solubilities in the same solvent, or, the seventh material being generated by a ninth material under light radiation in the sixth band, the seventh material and the third light-emitting material having different solubilities in the same solvent.

13. The light-emitting substrate according to claim 12, wherein, The at least one third light-emitting device further includes: a sixth material layer, wherein the sixth material layer is disposed on the side of the fifth material layer near the substrate and is in the same layer as the first material layer; The thickness of the sixth material layer is less than the thickness of the seventh material layer.

14. The light-emitting substrate according to claim 12, wherein, In the case where the plurality of light-emitting devices include at least one second light-emitting device, and the second light-emitting device further includes a second material layer, the at least one third light-emitting device further includes: a seventh material layer, the seventh material layer being disposed on the side of the fifth material layer close to the substrate, and being in the same layer as the second material layer; The thickness of the seventh material layer is less than the thickness of the second material layer.

15. The light-emitting substrate according to claim 12, wherein, The at least one first light-emitting device further includes: an eighth material layer, the eighth material layer being disposed on the side of the light-emitting pattern included in the at least one first light-emitting device away from the substrate, and being in the same layer as the fifth material layer; The thickness of the eighth material layer is less than the thickness of the fifth material layer.

16. The light-emitting substrate according to claim 12, wherein, The at least one second light-emitting device further includes: a ninth material layer, wherein the ninth material layer is disposed on the side of the light-emitting pattern included in the at least one second light-emitting device away from the substrate, and is in the same layer as the fifth material layer; The thickness of the ninth material layer is less than the thickness of the fifth material layer.

17. The light-emitting substrate according to any one of claims 1 to 7, wherein, For light-emitting devices of different colors, when the material layer in contact with the light-emitting pattern contained in each light-emitting device and the material layer located on the side of the light-emitting pattern contained in each light-emitting device closer to the substrate all include metal nano-ions and ligands bound to the metal nano-ions, the metal nano-ions contained in each material layer are the same, and at least one material layer contains metal nano-ions doped with other metals.

18. The light-emitting substrate according to claim 17, wherein, The metal nano-ions contained in each material layer are all zinc oxide, and at least one material layer contains metal nano-ions that are also doped with magnesium.

19. The light-emitting substrate according to claim 18, wherein, Each material layer contains metal nano-ions doped with magnesium, and the amount of magnesium doped in the metal nano-ions of each material layer is different.

20. A light-emitting device, comprising: The light-emitting substrate as described in any one of claims 1 to 19.

21. A method for preparing a light-emitting substrate, comprising: Multiple light-emitting devices are formed on a substrate, each light-emitting device including: a first electrode, a second electrode, and a light-emitting pattern formed between the first electrode and the second electrode, wherein the first electrode is closer to the substrate than the second electrode; The plurality of light-emitting devices include at least one first light-emitting device, and the at least one first light-emitting device further includes: a first material layer, the first material layer being formed on the side of the light-emitting pattern included in the at least one first light-emitting device close to the substrate, and in contact with the light-emitting pattern included in the at least one first light-emitting device; Wherein, the material of the light-emitting pattern included in the at least one first light-emitting device includes: a first light-emitting material; the material of the first material layer includes: a first material, the first material being capable of generating a second material under light radiation in a first wavelength band, the first material and the first light-emitting material having different solubilities in the same solvent as the second material, or, the first material being generated by a third material under light radiation in a second wavelength band, the first material and the first light-emitting material having different solubilities in the same solvent as the third material; Both the first material and the first luminescent material include: metal nano-ions and ligands bound to the metal nano-ions; Wherein, the ligands contained in the first material and the ligands contained in the first luminescent material may be the same or different. If the ligands contained in the first material and the ligands contained in the first luminescent material are the same, the ligands contained in the third material are photosensitive ligands. If the ligands contained in the first material and the ligands contained in the first luminescent material are different, the ligands contained in the first luminescent material are non-photosensitive ligands. The non-photosensitive ligands have different solubilities in the same solvent as the second material, or the non-photosensitive ligands have different solubilities in the same solvent as the third material.

22. The method for preparing a light-emitting substrate according to claim 21, wherein, The first material is generated by the third material under light radiation in the second band, and the solubility of the first material and the first luminescent material in the first solvent is less than the solubility of the third material in the first solvent; Forming the at least one first light-emitting device includes: A first thin film and a second thin film are sequentially formed on a substrate. The material of the first thin film includes the third material, and the material of the second thin film includes the first luminescent material. Alternatively, the material of the second thin film includes a tenth material, which is capable of generating the first luminescent material under light radiation in the second wavelength band. The first thin film and the portion of the second thin film located in the first region are irradiated with light of the second band, so that the portion of the first thin film located in the first region generates the first material, wherein the first region is the region where at least one first light-emitting device is located. The first solvent is used to dissolve the portion of the first film located in the second region, thereby removing the portion of the first film located in the second region, and the portion of the second film located in the second region is also removed, to obtain the first material layer and the light-emitting pattern contained in the at least one first light-emitting device. The second region is the remaining region among the plurality of light-emitting devices other than the region where the at least one first light-emitting device is located.

23. The method for preparing a light-emitting substrate according to claim 22, wherein, The ligands contained in the first material may be the same as or different from those contained in the first luminescent material. If the ligands contained in the first material are different from those contained in the first luminescent material, the ligands contained in the first luminescent material are not soluble in the first solvent.

24. The method for preparing a light-emitting substrate according to claim 23, wherein, When the ligands contained in the first material are the same as those contained in the first luminescent material, the first luminescent material is generated by the light radiation of the tenth material in the second band, and the ligands contained in the third material and the ligands contained in the tenth material are both photosensitive ligands. If the ligand contained in the first material is different from the ligand contained in the first luminescent material, the ligand contained in the third material is a photosensitive ligand, and the material of the second film includes the first luminescent material.

25. The method for preparing a light-emitting substrate according to claim 24, wherein, The photosensitive ligands include ligands capable of undergoing decomposition or cross-linking reactions under radiation in the second wavelength band.

26. The method for preparing a light-emitting substrate according to claim 25, wherein, The photosensitive ligands include either 2-(Boc-amino)ethanethiol or MMES.

27. The method for preparing a light-emitting substrate according to any one of claims 21 to 26, wherein, The plurality of light-emitting devices further includes at least one second light-emitting device, and the at least one second light-emitting device further includes: a second material layer, the second material layer being formed on the side of the light-emitting pattern included in the at least one second light-emitting device close to the substrate, and in contact with the light-emitting pattern included in the at least one second light-emitting device; Wherein, the material of the light-emitting pattern included in the at least one second light-emitting device includes: a second light-emitting material; the material of the second material layer includes: a fourth material, wherein the fourth material generates a fifth material under light radiation in the third band, wherein the fourth material and the second light-emitting material have different solubilities in the same solvent as the fifth material, or, the fourth material is generated by a sixth material under light radiation in the fourth band, wherein the fourth material and the second light-emitting material have different solubilities in the same solvent as the sixth material.

28. The method for preparing a light-emitting substrate according to claim 27, wherein, The fourth material is generated by the sixth material under light radiation in the fourth band, and the solubility of the fourth material and the second luminescent material in the second solvent is less than the solubility of the sixth material in the second solvent; Forming the at least one second light-emitting device includes: A third thin film and a fourth thin film are sequentially formed on a substrate containing a light-emitting pattern and the first material layer and the at least one first light-emitting device. The material of the third thin film includes the sixth material, and the material of the fourth thin film includes the second light-emitting material. Alternatively, the material of the fourth thin film includes an eleventh material, which is capable of generating the second light-emitting material under light radiation in the fourth wavelength band. The third thin film and the portion of the fourth thin film located in the third region are irradiated with light of the fourth wavelength band, so that the portion of the third thin film located in the third region generates the fourth material, wherein the third region is the region where at least one second light-emitting device is located. The third film located in the fourth region is dissolved using the second solvent to remove the portion of the third film located in the fourth region, and the portion of the fourth film located in the fourth region is also removed to obtain the second material layer and the light-emitting pattern contained in the at least one second light-emitting device. The fourth region is the remaining region among the plurality of light-emitting devices other than the region where the at least one second light-emitting device is located.

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