Light-emitting substrate, preparation method thereof and light-emitting device

Abstract

The embodiment of the invention provides a light-emitting substrate, a preparation method thereof and a light-emitting device, relates to the technical field of display, and is used for solving the problem of color mixing caused by a residual layer formed by a quantum dot light-emitting material. A light emitting substrate; comprising a substrate and a plurality of light-emitting devices; each of the plurality of light emitting devices includes a first electrode, a second electrode, and a light emitting pattern; the plurality of light-emitting devices include at least one first light-emitting device, each first light-emitting device including a first light-emitting pattern, and a first carrier transport layer and a first carrier injection layer disposed between the substrate and the first light-emitting pattern; materials of the first light-emitting pattern comprise a first cross-linked light-emitting material; the material of the first carrier transport layer comprises a first cross-linked carrier transport material; the material of the first carrier injection layer comprises a first cross-linked carrier injection material. The light-emitting substrate is used for the light-emitting device.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting substrate and a preparation method thereof, and a light-emitting device. Background Art

[0002] As a new type of luminescent material, quantum dots (QD) have the advantages of high light color purity, high luminescent quantum efficiency, adjustable luminescent color, and long service life, and have become a research hotspot for new LED (Light Emitting Diode) luminescent materials. Therefore, quantum dot light emitting diodes (QLED) with quantum dot materials as the luminescent layer have become the main research direction of new display devices. Summary of the invention

[0003] The purpose of the embodiments of the present disclosure is to provide a light-emitting substrate and a preparation method thereof, and a light-emitting device, which are used to solve the problem that the residual layer formed by the quantum dot light-emitting material may cause color mixing.

[0004] To achieve the above objectives, the embodiments of the present disclosure provide the following technical solutions:

[0005] On the one hand, a light-emitting substrate is provided; the light-emitting substrate comprises a substrate and a plurality of light-emitting devices, the plurality of light-emitting devices are arranged on the substrate and arranged along a first direction, and the first direction is parallel to the plane where the substrate is located; each of the plurality of light-emitting devices comprises: a first electrode, a second electrode, and a light-emitting pattern arranged between the first electrode and the second electrode; the plurality of light-emitting devices comprises: at least one first light-emitting device, each of the at least one first light-emitting device comprises: a first light-emitting pattern, and a first carrier transport layer and a first carrier injection layer arranged between the substrate and the first light-emitting pattern; the first carrier transport layer is closer to the first light-emitting pattern than the first carrier injection layer; wherein the material of the first light-emitting pattern comprises: a first cross-linked light-emitting material; the material of the first carrier transport layer comprises: a first cross-linked carrier transport material; the material of the first carrier injection layer comprises: a first cross-linked carrier injection material.

[0006] Compared with the direct photolithography method used in the related art to achieve patterning of quantum dot luminescent materials, by setting the material that can undergo cross-linking reaction under light irradiation as the material of the two front film layers (i.e., the first carrier transport layer and the first carrier injection layer), on the one hand, the two front film layers can be used as double sacrificial layers to remove the part of the first quantum dot material located in the remaining area except the area where the first light-emitting device is located, thereby avoiding the first quantum dot material from forming residues in the remaining areas except the area where the first light-emitting device is located, and further solving the problem of color mixing caused by the residue of quantum dot luminescent material of the previous color on the side of the luminescent pattern of the next color close to the substrate in the related art. On the other hand, since the first initial carrier transport layer that forms the first carrier transport layer is a film layer that is in contact with the first initial light-emitting pattern that forms the first light-emitting pattern, and the first initial carrier transport layer will remain in the remaining areas except the area where the first light-emitting device is located to form a second temporary residual layer, the present application can remove the second temporary residual layer by development, and can avoid the second temporary residual layer from remaining in the areas where other light-emitting devices except the first light-emitting device are located in multiple light-emitting devices. In this way, the problem of color mixing can be further solved, the problem of impure light-emitting spectrum can be avoided, and the device performance can be effectively improved.

[0007] In some embodiments, the plurality of light-emitting devices further include at least one second light-emitting device; each of the at least one second light-emitting device includes: a second light-emitting pattern, and a second sacrificial layer group disposed between the substrate and the second light-emitting pattern, the second sacrificial layer group including a second carrier transport layer; wherein the material of the second light-emitting pattern includes: a second cross-linked light-emitting material; the material of the second carrier transport layer includes: a second cross-linked carrier transport material.

[0008] In some embodiments, the second sacrificial layer group further includes: a second carrier injection layer; the second carrier injection layer is located on a side of the second carrier transport layer close to the substrate, and the material of the second carrier injection layer includes: a second cross-linked carrier injection material.

[0009] In some embodiments, the plurality of light-emitting devices further include at least one third light-emitting device; each of the at least one third light-emitting device includes: a third light-emitting pattern, and a third sacrificial layer group disposed between the substrate and the third light-emitting pattern, the third sacrificial layer group including a third carrier transport layer; wherein the material of the third light-emitting pattern includes: a third cross-linked light-emitting material; the material of the third carrier transport layer includes: a third cross-linked carrier transport material.

[0010] In some embodiments, the third sacrificial layer group further includes a third carrier injection layer; the third carrier injection layer is located on a side of the third carrier transport layer close to the substrate, and the material of the third carrier injection layer includes: a third cross-linked carrier injection material.

[0011] In some embodiments, the first cross-linked luminescent material is generated by cross-linking the first quantum dot material under light radiation; the solubility of the first quantum dot material in the first solvent is greater than the solubility of the first cross-linked luminescent material in the first solvent; or, the first cross-linked luminescent material is generated by cross-linking the first quantum dot material and the first photosensitive material under light radiation; the solubility of the first quantum dot material and the first photosensitive material in the first solvent is greater than the solubility of the first cross-linked luminescent material in the first solvent.

[0012] The first cross-linked carrier transport material is generated by cross-linking the first carrier transport material under light radiation, and the solubility of the first carrier transport material in the second solvent is greater than the solubility of the first cross-linked carrier transport material in the second solvent; or, the first cross-linked carrier transport material is generated by cross-linking the first carrier transport material and the second photosensitive material under light radiation, and the solubility of the first carrier transport material and the second photosensitive material in the second solvent is greater than the solubility of the first cross-linked carrier transport material in the second solvent.

[0013] The first cross-linked carrier injection material is generated by cross-linking the first carrier injection material under light radiation, and the solubility of the first carrier injection material in the third solvent is greater than the solubility of the first cross-linked carrier injection material in the third solvent; or, the first cross-linked carrier injection material is generated by cross-linking the first carrier injection material and the third photosensitive material under light radiation, and the solubility of the first carrier injection material and the third photosensitive material in the third solvent is greater than the solubility of the first cross-linked carrier injection material in the third solvent.

[0014] In some embodiments, the second cross-linked luminescent material is generated by cross-linking the second quantum dot material under light radiation; the solubility of the second quantum dot material in the fourth solvent is greater than the solubility of the second cross-linked luminescent material in the fourth solvent; or, the second cross-linked luminescent material is generated by cross-linking the second quantum dot material and the fourth photosensitive material under light radiation; the solubility of the second quantum dot material and the fourth photosensitive material in the fourth solvent is greater than the solubility of the second cross-linked luminescent material in the fourth solvent.

[0015] The second cross-linked carrier transport material is generated by cross-linking the second carrier transport material under light radiation, and the solubility of the second carrier transport material in the fifth solvent is greater than the solubility of the second cross-linked carrier transport material in the fifth solvent; or, the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material and the fifth photosensitive material under light radiation, and the solubility of the second carrier transport material and the fifth photosensitive material in the fifth solvent is greater than the solubility of the second cross-linked carrier transport material in the fifth solvent.

[0016] In some embodiments, the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material under light radiation, and the solubility of the second carrier injection material in the sixth solvent is greater than the solubility of the second cross-linked carrier injection material in the sixth solvent, or, the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material and the sixth photosensitive material under light radiation, and the solubility of the second carrier injection material and the sixth photosensitive material in the sixth solvent is greater than the solubility of the second cross-linked carrier injection material in the sixth solvent.

[0017] In some embodiments, the third cross-linked luminescent material is generated by cross-linking a third quantum dot material under light radiation; the solubility of the third quantum dot material in the seventh solvent is greater than the solubility of the third cross-linked luminescent material in the seventh solvent; or, the third cross-linked luminescent material is generated by cross-linking a third quantum dot material and a seventh photosensitive material under light radiation; the solubility of the third quantum dot material and the seventh photosensitive material in the seventh solvent is greater than the solubility of the third cross-linked luminescent material in the seventh solvent.

[0018] The third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation, and the solubility of the third carrier transport material in the eighth solvent is greater than the solubility of the third cross-linked carrier transport material in the eighth solvent; or, the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation, and the solubility of the third carrier transport material and the eighth photosensitive material in the eighth solvent is greater than the solubility of the third cross-linked carrier transport material in the eighth solvent.

[0019] In some embodiments, the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation, and the solubility of the third carrier injection material in the ninth solvent is greater than the solubility of the third cross-linked carrier injection material in the ninth solvent; or, the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material and the ninth photosensitive material under light radiation, and the solubility of the third carrier injection material and the ninth photosensitive material in the ninth solvent is greater than the solubility of the third cross-linked carrier injection material in the ninth solvent.

[0020] In some embodiments, at least one first light-emitting device is configured to emit light of a first wavelength; each of the at least one first light-emitting device further includes: a first pattern layer and a second pattern layer, the first pattern layer being disposed on a side of the first light-emitting pattern away from the substrate, the second pattern layer being disposed on a side of the first pattern layer away from the substrate, the first light-emitting pattern, the first pattern layer and the second pattern layer being in contact in sequence.

[0021] In some embodiments, when the second sacrificial layer group includes a second carrier transport layer, the thickness of the first pattern layer is less than the thickness of the second carrier transport layer; when the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material under light radiation, the material of the first pattern layer includes: the second carrier transport material; or, when the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material and the fifth photosensitive material under light radiation, the material of the first pattern layer includes: the second carrier transport material and the fifth photosensitive material; or,

[0022] When the second sacrificial layer group includes a second carrier transport layer and a second carrier injection layer, the thickness of the first pattern layer is less than the thickness of the second carrier injection layer; when the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material under light radiation, the material of the first pattern layer includes: the second carrier injection material; or, when the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material and the sixth photosensitive material under light radiation, the material of the first pattern layer includes: the second carrier injection material and the sixth photosensitive material.

[0023] In some embodiments, when the third sacrificial layer group includes a third carrier transport layer, the thickness of the second pattern layer is less than the thickness of the third carrier transport layer; when the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation, the material of the second pattern layer includes: the third carrier transport material; or, when the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation, the material of the second pattern layer includes: the third carrier transport material and the eighth photosensitive material; or,

[0024] When the third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, the thickness of the second pattern layer is less than the thickness of the third carrier injection layer; when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation, the material of the second pattern layer includes: the third carrier injection material; or, when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material and the ninth photosensitive material under light radiation, the material of the second pattern layer includes: the third carrier injection material and the ninth photosensitive material.

[0025] In some embodiments, at least one second light-emitting device is configured to emit light of a second wavelength; at least one second light-emitting device also includes: a third pattern layer and a fourth pattern layer, the third pattern layer is arranged on a side of the second sacrificial layer group close to the substrate, and the fourth pattern layer is arranged on a side of the second light-emitting pattern away from the substrate, and the third pattern layer, the second sacrificial layer group, the second light-emitting pattern and the fourth pattern layer are in contact in sequence.

[0026] In some embodiments, the thickness of the third pattern layer is less than the thickness of the first carrier injection layer; and the material of the third pattern layer includes the first cross-linked carrier injection material.

[0027] In the case where the third sacrificial layer group includes the third carrier transport layer, the thickness of the fourth pattern layer is less than the thickness of the third carrier transport layer; in the case where the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation, the material of the fourth pattern layer includes: the third carrier transport material; or, in the case where the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation, the material of the fourth pattern layer includes: the third carrier transport material and the eighth photosensitive material; or,

[0028] When the third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, the thickness of the fourth pattern layer is less than the thickness of the third carrier injection layer; when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation, the material of the fourth pattern layer includes: the third carrier injection material; or, when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material and the ninth photosensitive material under light radiation, the material of the fourth pattern layer includes: the third carrier injection material and the ninth photosensitive material.

[0029] In some embodiments, at least one third light-emitting device is configured to emit light of a third wavelength; at least one third light-emitting device also includes: a fifth pattern layer and a sixth pattern layer, the sixth pattern layer is arranged on a side of the third sacrificial layer group close to the substrate, the fifth pattern layer is arranged on a side of the sixth pattern layer close to the substrate, and the third sacrificial layer group, the sixth pattern layer and the fifth pattern layer are in contact in sequence.

[0030] In some embodiments, the thickness of the fifth pattern layer is less than the thickness of the first carrier injection layer; the material of the fifth pattern layer includes: the first cross-linked carrier injection material. In the case where the second sacrificial layer group includes the second carrier transport layer, the thickness of the sixth pattern layer is less than the thickness of the second carrier transport layer; the material of the sixth pattern layer includes: the second cross-linked carrier transport material. Or, in the case where the second sacrificial layer group includes the second carrier transport layer and the second carrier injection layer, the thickness of the sixth pattern layer is less than the thickness of the second carrier injection layer; the material of the sixth pattern layer includes: the second cross-linked carrier injection material.

[0031] In some embodiments, at least one first light emitting device is configured to emit light of a first wavelength, the light of the first wavelength is red light. At least one second light emitting device is configured to emit light of a second wavelength, the light of the second wavelength is green light. At least one third light emitting device is configured to emit light of a third wavelength, the light of the third wavelength is blue light.

[0032] In some embodiments, the light-emitting substrate further comprises: a pixel defining layer, a plurality of openings are arranged on the pixel defining layer, and a plurality of light-emitting devices are arranged in the plurality of openings in a one-to-one correspondence. A seventh pattern layer, an eighth pattern layer, and a ninth pattern layer are arranged on a side of the pixel defining layer away from the substrate, and the seventh pattern layer, the eighth pattern layer, and the ninth pattern layer are arranged in sequence in a direction away from the substrate, and the seventh pattern layer, the eighth pattern layer, and the ninth pattern layer are in contact with each other in sequence.

[0033] In some embodiments, the thickness of the seventh pattern layer is less than the thickness of the first carrier injection layer; when the first cross-linked carrier injection material is generated by cross-linking the first carrier injection material under light radiation, the material of the seventh pattern layer includes the first carrier injection material; or, when the first cross-linked carrier injection material is generated by cross-linking the first carrier injection material and the third photosensitive material under light radiation, the material of the seventh pattern layer includes the first carrier injection material and the third photosensitive material.

[0034] In the case where the second sacrificial layer group includes a second carrier transport layer, the thickness of the eighth pattern layer is less than the thickness of the second carrier transport layer. In the case where the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material under light radiation, the material of the eighth pattern layer includes: the second carrier transport material. Alternatively, in the case where the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material and the fifth photosensitive material under light radiation, the material of the eighth pattern layer includes: the second carrier transport material and the fifth photosensitive material. Or,

[0035] When the second sacrificial layer group includes a second carrier transport layer and a second carrier injection layer, the thickness of the eighth pattern layer is less than the thickness of the second carrier injection layer; when the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material under light radiation, the material of the eighth pattern layer includes: the second carrier injection material; or, when the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material and the sixth photosensitive material under light radiation, the material of the eighth pattern layer includes: the second carrier injection material and the sixth photosensitive material.

[0036] In some embodiments, when the third sacrificial layer group includes a third carrier transport layer, the thickness of the ninth pattern layer is less than the thickness of the third carrier transport layer. When the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation, the material of the ninth pattern layer includes the third carrier transport material. Alternatively, when the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation, the material of the ninth pattern layer includes the third carrier transport material and the eighth photosensitive material. Or,

[0037] When the third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, the thickness of the ninth pattern layer is less than the thickness of the third carrier injection layer; when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation, the material of the ninth pattern layer includes: the third carrier injection material; or, when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material and the ninth photosensitive material under light radiation, the material of the ninth pattern layer includes: the third carrier injection material and the ninth photosensitive material.

[0038] In some embodiments, any one of the first cross-linked light-emitting material, the second cross-linked light-emitting material, and the third cross-linked light-emitting material includes any one of the structures represented by the following general formula (IA).

[0039]

[0040] Any one of the first cross-linked light-emitting material, the second cross-linked light-emitting material and the third cross-linked light-emitting material includes any one of the structures represented by the following general formula (IB).

[0041]

[0042] Any one of the first cross-linked light-emitting material, the second cross-linked light-emitting material and the third cross-linked light-emitting material includes any one of the structures represented by the following general formula (IC).

[0043]

[0044] Among them, L 1 Any one selected from a single bond, an ester bond, an ether bond and a thioether bond. 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 Each independently selected from hydrogen bonds, saturated or unsaturated straight or branched alkyl groups containing C1 to C40, cycloalkyl groups containing C3 to C40, heterocycloalkyl groups containing C3 to C40, aryl groups containing C6 to C40, and heteroaryl groups containing C6 to C40. QD represents any one of the quantum dot entities; the quantum dot entities include: II-VI quantum dots, III-V quantum dots, IV-VI quantum dots, core-shell quantum dots, and ABX 3 Any of the ABX type perovskite quantum dots; 3 A is CH in perovskite quantum dots 3 NH 3 + NH 2 CH=NH 2 and Cs+ One or more of, B is Pb 2+ and Sn 2+ One or two of the following, X is Cl - Br - and I - One or more of ABX 3 Type perovskite quantum dots include CH 3 NH 3 PbB 3 , CH 3 NH 3 PbCl 3 , CH 3 NH 3 PbI 3 、CsPbBr 3 、CsPbCl 3 and CsPbI 3 . R 1 'Selected from R 1 Any of the remaining structures obtained by removing one hydrogen from a carboxyl group, an amino group, and a thiol group; R 1 Any one of a carboxyl group containing a C1-C40 carbon chain, an amino group containing a C1-C40 carbon chain, and a thiol group containing a C1-C40 carbon chain; any one of the carboxyl group, the amino group, and the thiol group is coordinated and connected with the quantum dot body. a, b, and c are independently selected from positive integers greater than or equal to 2.

[0045] In some embodiments, any one of the first cross-linked carrier transport material, the second cross-linked carrier transport material, and the third cross-linked carrier transport material includes any one of the structures represented by the following general formula (II-A).

[0046]

[0047] Any one of the first cross-linked carrier transport material, the second cross-linked carrier transport material and the third cross-linked carrier transport material includes any one of the structures represented by the following general formula (II-B).

[0048]

[0049] Any one of the first cross-linked carrier transport material, the second cross-linked carrier transport material and the third cross-linked carrier transport material includes any one of the structures represented by the following general formula (II-C).

[0050]

[0051] Among them, L 2 Any one selected from a single bond, an ester bond, an ether bond and a thioether bond. 9 , R 10 , R11 , R 12 and R 13 Each of the following is independently selected from a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40. X represents the remaining structure of any one of the first carrier transport material, the second carrier transport material, and the third carrier transport material after removing the CH bond; the CH bond is used to undergo a cross-linking reaction with the second photosensitive group of the second type of photosensitive material under light radiation; the second type of photosensitive material is one of the second photosensitive material, the fifth photosensitive material, and the eighth photosensitive material. d, e, and f are independently selected from positive integers greater than or equal to 2.

[0052] In some embodiments, any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material, and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-A).

[0053]

[0054] Any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-B).

[0055]

[0056] Any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-C).

[0057]

[0058] Any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-D).

[0059]

[0060] Any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-E).

[0061]

[0062] Any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-F).

[0063]

[0064] Among them, L 3 and L 4 are independently selected from any one of a single bond, an ester bond, an ether bond and a thioether bond. 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , R 21 , R 22 and R 23 Each of the following groups is independently selected from hydrogen bonds, saturated or unsaturated straight or branched alkyl groups containing C1 to C40, cycloalkyl groups containing C3 to C40, heterocycloalkyl groups containing C3 to C40, aryl groups containing C6 to C40, and heteroaryl groups containing C6 to C40. Y represents the remaining structure of any one of the first carrier injection material, the second carrier injection material, and the third carrier injection material after removing the CH bond; the CH bond is used to undergo a cross-linking reaction with the third photosensitive group of the third type of photosensitive material under light radiation; the third type of photosensitive material is one of the third photosensitive material, the sixth photosensitive material, and the ninth photosensitive material. [M] m- , [Q] q- and [U] u- Each of the anions is independently selected from any one of organic anions and inorganic anions; organic anions include benzenesulfonate ion, salicylate ion, 3-hydroxy-2-naphthoate ion; inorganic anions include chloride ion, sulfate ion, nitrate ion. [N] n+ , [T] t+ and [W] z+ Each of the following is independently selected from any one of organic cations and inorganic cations; organic cations include methylamine ions; inorganic cations include sodium ions and potassium ions. g, h, i, j, k and v are independently selected from positive integers greater than or equal to 2. m, n, q, t, u and z are independently selected from positive integers greater than or equal to 1.

[0065] In some embodiments, the first photosensitive material, the fourth photosensitive material, and the seventh photosensitive material are independently selected from any one of the first type of photosensitive materials; the first type of photosensitive material includes: a first photosensitive group, the first photosensitive group undergoes a cross-linking reaction with a quantum dot material under light radiation; the quantum dot material is one of the first quantum dot material, the second quantum dot material, and the third quantum dot material. The second photosensitive material, the fifth photosensitive material, and the eighth photosensitive material are independently selected from any one of the second type of photosensitive materials; the second type of photosensitive material includes: a second photosensitive group, the second photosensitive group undergoes a cross-linking reaction with a carrier transport material under light radiation; the carrier transport material is one of the first carrier transport material, the second carrier transport material, and the third carrier transport material. The third photosensitive material, the sixth photosensitive material and the ninth photosensitive material are independently selected from any one of the third type of photosensitive materials; the third type of photosensitive materials includes: a third photosensitive group, the third photosensitive group undergoes a cross-linking reaction with a carrier injection material under light radiation; the carrier injection material is one of the first carrier injection material, the second carrier injection material and the third carrier injection material. In addition, any two of the first photosensitive group, the second photosensitive group and the third photosensitive group may be the same or different.

[0066] In some embodiments, under ultraviolet light in the wavelength range of 200 nm to 400 nm, the molar extinction coefficient of the third type of photosensitive material is greater than 1 cm -1 (mol / L) -1 .

[0067] In some embodiments, the first type of photosensitive material is selected from any one of the structures represented by the following general formula (IV-A).

[0068]

[0069] The first type of photosensitive material is selected from any one of the structures shown in the following general formula (IV-B).

[0070]

[0071] The first type of photosensitive material is selected from any one of the structures represented by the following general formula (IV-C).

[0072]

[0073] Among them, in the general formula (IV-A), the benzophenone group is the first photosensitive group; in the general formula (IV-B), the azide group is the first photosensitive group; in the general formula (IV-C), the diaziridine group is the first photosensitive group. 1 Any one selected from a single bond, an ester bond, an ether bond and a thioether bond; R 2 , R 3 , R 4 , R5 , R 6 , R 7 and R 8 Each of a, b and c is independently selected from any one of a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40 and a heteroaryl group containing C6 to C40. a, b and c are independently selected from any one of a positive integer greater than or equal to 2.

[0074] In some embodiments, the second type of photosensitive material is selected from any one of the structures shown in the following general formula (VA).

[0075]

[0076] The second type of photosensitive material is selected from any one of the structures shown in the following general formula (VB).

[0077]

[0078] The second type of photosensitive material is selected from any one of the structures shown in the following general formula (VC);

[0079]

[0080] Among them, in the general formula (VA), the benzophenone group is the second photosensitive group; in the general formula (VB), the azide group is the second photosensitive group; in the general formula (VC), the diaziridine group is the second photosensitive group. 2 Any one selected from a single bond, an ester bond, an ether bond and a thioether bond. 9 , R 10 , R 11 , R 12 and R 13 Each of the following is independently selected from a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40. Each of d, e, and f is independently selected from a positive integer greater than or equal to 2.

[0081] In some embodiments, the third type of photosensitive material is selected from any one of the structures represented by the following general formula (VI-A).

[0082]

[0083] The third type of photosensitive material is selected from any one of the structures represented by the following general formula (VI-B).

[0084]

[0085] The third type of photosensitive material is selected from any one of the structures represented by the following general formula (VI-C).

[0086]

[0087] The third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-D).

[0088]

[0089] The third type of photosensitive material is selected from any one of the structures represented by the following general formula (VI-E).

[0090]

[0091] The third type of photosensitive material is selected from any one of the structures represented by the following general formula (VI-F).

[0092]

[0093] Among them, in the general formula (VI-A) and the general formula (VI-B), the benzophenone group is the third photosensitive group; in the general formula (VI-C) and the general formula (VI-D), the azide group is the third photosensitive group; in the general formula (VI-E) and the general formula (VI-F), the diaziridine group is the third photosensitive group. 3 and L 4 are independently selected from any one of a single bond, an ester bond, an ether bond and a thioether bond. 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , R 21 , R 22 and R 23 [M] are independently selected from any one of a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40; m- , [Q] q- and [U] u- Each of the anions is independently selected from any one of organic anions and inorganic anions; organic anions include benzenesulfonate ion, salicylate ion, 3-hydroxy-2-naphthoate ion; inorganic anions include chloride ion, sulfate ion, nitrate ion. [N] n+ , [T] t+ and [W] z+Each of the following is independently selected from any one of organic cations and inorganic cations; organic cations include methylamine ions; inorganic cations include sodium ions and potassium ions. g, h, i, j, k and v are independently selected from positive integers greater than or equal to 2. m, n, q, t, u and z are independently selected from positive integers greater than or equal to 1.

[0094] In some embodiments, R 5 , R 6 and R 7 Any one of a saturated or unsaturated straight or branched alkyl group of C10 to C30, a saturated or unsaturated straight or branched alkyl group of C10 to C30 in which at least one hydrogen atom is replaced by a fluorine atom, and a saturated or unsaturated straight or branched alkyl group of C10 to C30 containing at least one ether bond. And / or, R 10 , R 11 and R 12 are independently selected from C1-C8 saturated or unsaturated straight chain or branched alkyl groups. And / or, R 15 , R 17 , R 18 , R 19 , R 21 and R 23 They are independently selected from any one of a C1~C40 carbon chain containing an ester bond, a C1~C40 carbon chain containing an ether bond, a C1~C40 carbon chain containing a carbonyl group, a C1~C40 carbon chain containing an amide group, a C1~C40 carbon chain containing a carboxyl group, a C1~C40 carbon chain containing an amino group and a C1~C40 carbon chain containing an aldehyde group.

[0095] In some embodiments, any one of the first quantum dot material, the second quantum dot material, and the third quantum dot material includes: a quantum dot body and a first ligand material coordinated to the quantum dot body; the first ligand material contains a carbon-hydrogen insertion group ZH; the carbon-hydrogen insertion group ZH is configured to undergo a carbon-hydrogen insertion reaction with the first type of photosensitive group under light radiation. And / or, any one of the first carrier transport material, the second carrier transport material, and the third carrier transport material includes: a carbon-hydrogen insertion group ZH; the carbon-hydrogen insertion group ZH is configured to undergo a carbon-hydrogen insertion reaction with the second type of photosensitive group under light radiation. And / or, any one of the first carrier injection material, the second carrier injection material, and the third carrier injection material includes: a carbon-hydrogen insertion group ZH; the carbon-hydrogen insertion group ZH is configured to undergo a carbon-hydrogen insertion reaction with the third type of photosensitive group under light radiation. In the carbon-hydrogen insertion group ZH, Z is any one of primary carbon, secondary carbon, and tertiary carbon.

[0096] In some embodiments, the polarity of the third solvent is greater than the polarity of the second solvent; the polarity of the second solvent is greater than the polarity of the first solvent. And / or, the polarity of the sixth solvent is greater than the polarity of the fifth solvent; the polarity of the fifth solvent is greater than the polarity of the fourth solvent. And / or, the polarity of the ninth solvent is greater than the polarity of the eighth solvent; the polarity of the eighth solvent is greater than the polarity of the seventh solvent.

[0097] In some embodiments, the first type of solvent is at least one of octane and propylene glycol methyl ether acetate; the first type of solvent is any one of the first solvent, the fourth solvent and the seventh solvent. And / or, the second type of solvent is at least one of toluene, chlorobenzene and dichlorotoluene; the second type of solvent is any one of the second solvent, the fifth solvent and the eighth solvent. And / or, the third type of solvent is at least one of water, ethanol, methanol, N,N-dimethylformamide, N-methylformamide and dichlorothionyl; the third type of solvent is any one of the third solvent, the sixth solvent and the ninth solvent.

[0098] In some embodiments, the first carrier injection layer, the second carrier injection layer and the third carrier injection layer are hole injection layers; the first carrier transport layer, the second carrier transport layer and the third carrier transport layer are hole transport layers.

[0099] On the other hand, a method for preparing a light-emitting substrate is provided, the method comprising: forming a plurality of light-emitting devices on a substrate. The plurality of light-emitting devices are arranged along a first direction, the first direction being parallel to the plane where the substrate is located; each of the plurality of light-emitting devices comprises: a first electrode, a second electrode, and a light-emitting pattern disposed between the first electrode and the second electrode. The plurality of light-emitting devices comprises: at least one first light-emitting device, each of the at least one first light-emitting device comprises: a first light-emitting pattern, and a first carrier transport layer and a first carrier injection layer disposed between the substrate and the first light-emitting pattern; the first carrier transport layer is closer to the first light-emitting pattern than the first carrier injection layer. Wherein, the material of the first light-emitting pattern comprises: a first cross-linked light-emitting material; the material of the first carrier transport layer comprises: a first cross-linked carrier transport material; the material of the first carrier injection layer comprises: a first cross-linked carrier injection material.

[0100] In some embodiments, forming at least one first light-emitting device includes: forming a first electrode layer on a substrate; the first electrode layer includes a first electrode of at least one first light-emitting device. A first initial carrier injection layer, a first initial carrier transport layer, and a first initial light-emitting pattern are sequentially formed on a side of the first electrode layer away from the substrate. The material of the first initial carrier injection layer includes a first carrier injection material, or a first carrier injection material and a third photosensitive material. The material of the first initial carrier transport layer includes a first carrier transport material, or a first carrier transport material and a second photosensitive material. The material of the first initial light-emitting pattern includes a first quantum dot material, or a first quantum dot material and a first photosensitive material. The stacked first initial carrier injection layer, the first initial carrier transport layer, and the first initial light-emitting pattern are exposed to light, so that the material of the exposed portion of the first initial carrier injection layer is converted into a first cross-linked carrier injection material, the material of the exposed portion of the first initial carrier transport layer is converted into a first cross-linked carrier transport material, and the material of the exposed portion of the first initial light-emitting pattern is converted into a first cross-linked light-emitting material. The stacked first initial carrier injection layer, the first initial carrier transport layer, and the first initial light emitting pattern are developed to form a stacked first carrier injection layer, a first carrier transport layer, and a first light emitting pattern.

[0101] In some embodiments, forming at least one first light-emitting device includes: forming a first electrode layer on a substrate; the first electrode layer includes a first electrode of at least one first light-emitting device. Forming a first initial carrier injection layer on a side of the first electrode layer away from the substrate; the material of the first initial carrier injection layer includes a first carrier injection material, or a first carrier injection material and a third photosensitive material. Exposing the first initial carrier injection layer to convert the material of the exposed portion of the first initial carrier injection layer into a first cross-linked carrier injection material. Sequentially forming a first initial carrier transport layer and a first initial light-emitting pattern on a side of the first initial carrier injection layer away from the substrate; wherein the material of the first initial carrier transport layer includes a first carrier transport material, or a first carrier transport material and a second photosensitive material. The material of the first initial light-emitting pattern includes a first quantum dot material, or a first quantum dot material and a first photosensitive material. The stacked first initial carrier transport layer and the first initial light-emitting pattern are exposed to light, so that the material of the exposed portion of the first initial carrier transport layer is converted into the first cross-linked carrier transport material, and the material of the exposed portion of the first initial light-emitting pattern is converted into the first cross-linked light-emitting material. The stacked first initial carrier injection layer, the first initial carrier transport layer, and the first initial light-emitting pattern are developed to form a stacked first carrier injection layer, the first carrier transport layer, and the first light-emitting pattern.

[0102] In some embodiments, the preparation method is used to prepare the light-emitting device described in some of the above embodiments (for example, for preparing Figure 3A The step of forming a plurality of light emitting devices on the substrate further comprises: forming at least one second light emitting device, and forming at least one third light emitting device.

[0103] Wherein, in the case where the plurality of light-emitting devices further include at least one second light-emitting device, and each of the at least one second light-emitting device includes a second sacrificial layer group, and the second sacrificial layer group includes a second carrier transport layer, forming at least one second light-emitting device includes: sequentially forming a second initial carrier transport layer and a second initial light-emitting pattern on the first electrode layer and the side of the at least one first light-emitting device away from the substrate; wherein the material of the second initial carrier transport layer includes a second carrier transport material, or a second carrier transport material and a fifth photosensitive material; the material of the second initial light-emitting pattern includes a second quantum dot material, or a second quantum dot material and a fourth photosensitive material. Exposing the stacked second initial carrier transport layer and the second initial light-emitting pattern, so that the material of the exposed portion of the second initial carrier transport layer is converted into a second cross-linked carrier transport material, and the material of the exposed portion of the second initial light-emitting pattern is converted into a second cross-linked light-emitting material. Developing the stacked second initial carrier transport layer and the second initial light-emitting pattern to form a stacked second carrier transport layer and a second light-emitting pattern.

[0104] In the case where the plurality of light-emitting devices further include at least one third light-emitting device, and each of the at least one third light-emitting device includes a third sacrificial layer group, and the third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, at least one third light-emitting device is formed, including: sequentially forming a third initial carrier transport layer and a third initial light-emitting pattern on the first electrode layer, at least one first light-emitting device, and at least one second light-emitting device on a side away from the substrate; wherein the material of the third initial carrier transport layer includes a third carrier transport material, or a third carrier transport material and an eighth photosensitive material; and the material of the third initial light-emitting pattern includes a third quantum dot material, or a third quantum dot material and a seventh photosensitive material. The stacked third initial carrier transport layer and the third initial light-emitting pattern are exposed to light, so that the material of the exposed portion of the third initial carrier transport layer is converted into a third cross-linked carrier transport material, and the material of the exposed portion of the third initial light-emitting pattern is converted into a third cross-linked light-emitting material. The stacked third initial carrier transport layer and the third initial light-emitting pattern are developed to form a stacked third carrier transport layer and a third light-emitting pattern.

[0105] In some embodiments, the preparation method is used to prepare the light-emitting device described in some of the above embodiments (for example, for preparing Figure 3BThe light-emitting substrate shown in FIG. 1 ). Forming a plurality of light-emitting devices on the substrate further includes: forming at least one second light-emitting device, and forming at least one third light-emitting device.

[0106] Wherein, when the plurality of light-emitting devices further include at least one second light-emitting device, and each of the at least one second light-emitting device includes a second sacrificial layer group, and the second sacrificial layer group includes a second carrier transport layer and a second carrier injection layer, at least one second light-emitting device is formed, including: sequentially forming a second initial carrier injection layer, a second initial carrier transport layer, and a second initial light-emitting pattern on the first electrode layer and the side away from the substrate of the at least one first light-emitting device. Wherein, the material of the second initial carrier injection layer includes a second carrier injection material, or a second carrier injection material and a sixth photosensitive material. The material of the second initial carrier transport layer includes a second carrier transport material, or a second carrier transport material and a fifth photosensitive material. The material of the second initial light-emitting pattern includes a second quantum dot material, or a second quantum dot material and a fourth photosensitive material. The stacked second initial carrier injection layer, the second initial carrier transport layer, and the second initial light-emitting pattern are exposed to light, so that the material of the exposed portion of the second initial carrier injection layer is converted into the second cross-linked carrier injection material, the material of the exposed portion of the second initial carrier transport layer is converted into the second cross-linked carrier transport material, and the material of the exposed portion of the second initial light-emitting pattern is converted into the second cross-linked light-emitting material. The stacked second initial carrier injection layer, the second initial carrier transport layer, and the second initial light-emitting pattern are developed to form a stacked second carrier injection layer, a second carrier transport layer, and a second light-emitting pattern.

[0107] In the case where the plurality of light-emitting devices further include at least one third light-emitting device, and each of the at least one third light-emitting device includes a third sacrificial layer group, and the third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, at least one third light-emitting device is formed, including: sequentially forming a third initial carrier injection layer, a third initial carrier transport layer, and a third initial light-emitting pattern on the side away from the substrate of the first electrode layer, at least one first light-emitting device, and at least one second light-emitting device. The material of the third initial carrier injection layer includes a third carrier injection material, or a third carrier injection material and a ninth photosensitive material. The material of the third initial carrier transport layer includes a third carrier transport material, or a third carrier transport material and an eighth photosensitive material. The material of the third initial light-emitting pattern includes a third quantum dot material, or a third quantum dot material and a seventh photosensitive material. The stacked third initial carrier injection layer, the third initial carrier transport layer, and the third initial light-emitting pattern are exposed to light, so that the material of the exposed portion of the third initial carrier injection layer is converted into a third cross-linked carrier injection material, the material of the exposed portion of the third initial carrier transport layer is converted into a third cross-linked carrier transport material, and the material of the exposed portion of the third initial light-emitting pattern is converted into a third cross-linked light-emitting material. The stacked third initial carrier injection layer, the third initial carrier transport layer, and the third initial light-emitting pattern are developed to form a stacked third carrier injection layer, a third carrier transport layer, and a third light-emitting pattern.

[0108] In some embodiments, the preparation method is used to prepare the light-emitting device described in some of the above embodiments (for example, for preparing Figure 3B The step of forming a plurality of light emitting devices on the substrate further comprises: forming at least one second light emitting device, and forming at least one third light emitting device.

[0109] Wherein, in the case where the plurality of light-emitting devices further include at least one second light-emitting device, and each of the at least one second light-emitting device includes a second sacrificial layer group, and the second sacrificial layer group includes a second carrier transport layer and a second carrier injection layer, at least one second light-emitting device is formed, including: forming a second initial carrier injection layer on the side away from the substrate of the first electrode layer and the at least one first light-emitting device, the material of the second initial carrier injection layer includes a second carrier injection material, or a second carrier injection material and a sixth photosensitive material. The second initial carrier injection layer is exposed to light, so that the material of the exposed part of the second initial carrier injection layer is converted into a second cross-linked carrier injection material. A second initial carrier transport layer and a second initial light-emitting pattern are sequentially formed on the side away from the substrate of the second initial carrier injection layer. Wherein, the material of the second initial carrier transport layer includes a second carrier transport material, or a second carrier transport material and a fifth photosensitive material. The material of the second initial light-emitting pattern includes a second quantum dot material, or a second quantum dot material and a fourth photosensitive material. The stacked second initial carrier transport layer and the second initial light-emitting pattern are exposed to light, so that the material of the exposed portion of the second initial carrier transport layer is converted into the second cross-linked carrier transport material, and the material of the exposed portion of the second initial light-emitting pattern is converted into the second cross-linked light-emitting material. The stacked second initial carrier injection layer, the second initial carrier transport layer, and the second initial light-emitting pattern are developed to form a stacked second carrier injection layer, a second carrier transport layer, and a second light-emitting pattern.

[0110] In the case where the plurality of light-emitting devices further include at least one third light-emitting device, and each of the at least one third light-emitting device includes a third sacrificial layer group, and the third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, at least one third light-emitting device is formed, including: forming a third initial carrier injection layer on the side away from the substrate of the first electrode layer, at least one first light-emitting device, and at least one second light-emitting device; the material of the third initial carrier injection layer includes a third carrier injection material, or a third carrier injection material and a ninth photosensitive material. The third initial carrier injection layer is exposed to light, so that the material of the exposed part of the third initial carrier injection layer is converted into a third cross-linked carrier injection material. The third initial carrier transport layer and the third initial light-emitting pattern are sequentially formed on the side away from the substrate of the third initial carrier injection layer. Among them, the material of the third initial carrier transport layer includes a third carrier transport material, or a third carrier transport material and an eighth photosensitive material. The material of the third initial light-emitting pattern includes a third quantum dot material, or a third quantum dot material and a seventh photosensitive material. The stacked third initial carrier transport layer and the third initial light-emitting pattern are exposed to light, so that the material of the exposed portion of the third initial carrier transport layer is converted into a third cross-linked carrier transport material, and the material of the exposed portion of the third initial light-emitting pattern is converted into a third cross-linked light-emitting material. The stacked third initial carrier injection layer, the third initial carrier transport layer, and the third initial light-emitting pattern are developed to form a stacked third carrier injection layer, a third carrier transport layer, and a third light-emitting pattern.

[0111] In some embodiments, the preparation method is used to prepare the light-emitting device described in some of the above embodiments (for example, for preparing Figure 3A Or the light-emitting substrate shown in 3B). In the initial light-emitting pattern, the ratio of the mass of the first type of photosensitive material to the mass of the quantum dot material ranges from 0% to 30%; the initial light-emitting pattern is one of the first initial light-emitting pattern, the second initial light-emitting pattern and the third initial light-emitting pattern. And / or, in the initial carrier transport layer, the ratio of the mass of the second type of photosensitive material to the mass of the carrier transport material ranges from 0% to 30%. The initial carrier transport layer is one of the first initial carrier transport layer, the second initial carrier transport layer and the third initial carrier transport layer. And / or, in the initial carrier injection layer, the ratio of the mass of the third type of photosensitive material to the mass of the carrier injection material ranges from 0% to 30%. The initial carrier injection layer is one of the first initial carrier injection layer, the second initial carrier injection layer and the third initial carrier injection layer.

[0112] The beneficial effects that can be achieved by the method for preparing the light-emitting substrate provided in some embodiments of the present disclosure are the same as the beneficial effects that can be achieved by the light-emitting substrate provided by the above technical solution, and will not be repeated here.

[0113] On the other hand, a light-emitting device is provided, comprising the light-emitting substrate described in any one of the above embodiments, and a driving chip for driving the light-emitting substrate to emit light.

[0114] The beneficial effects that can be achieved by the light-emitting devices provided by some embodiments of the present disclosure are the same as the beneficial effects that can be achieved by a light-emitting substrate provided by the above technical solution, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0115] In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required to be used in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the product involved in the embodiments of the present disclosure, the actual process of the method, the actual timing of the signal, etc.

[0116] Figure 1 A flow chart of preparing a light-emitting substrate according to some embodiments;

[0117] Figure 2 is a structural diagram of a light-emitting substrate provided according to some embodiments;

[0118] Figure 3A A structural diagram of a light-emitting substrate provided according to some embodiments of the present disclosure;

[0119] Figure 3B Another structural diagram of a light-emitting substrate provided according to some embodiments of the present disclosure;

[0120] Figure 4 A step diagram of a method for preparing a light-emitting substrate according to some embodiments of the present disclosure;

[0121] Figure 5 Another step diagram of a method for preparing a light-emitting substrate according to some embodiments of the present disclosure;

[0122] Figure 6 A diagram showing another step of a method for preparing a light-emitting substrate according to some embodiments of the present disclosure;

[0123] Figure 7 A diagram showing another step of a method for preparing a light-emitting substrate according to some embodiments of the present disclosure;

[0124] Figure 8 A diagram showing another step of a method for preparing a light-emitting substrate according to some embodiments of the present disclosure;

[0125] Fig.9AA diagram showing another step of a method for preparing a light-emitting substrate according to some embodiments of the present disclosure;

[0126] Fig. 9B A diagram showing another step of a method for preparing a light-emitting substrate according to some embodiments of the present disclosure;

[0127] Fig. 10A A diagram showing another step of a method for preparing a light-emitting substrate according to some embodiments of the present disclosure;

[0128] Fig. 10B A diagram showing another step of a method for preparing a light-emitting substrate according to some embodiments of the present disclosure;

[0129] Fig.11A A diagram showing another step of a method for preparing a light-emitting substrate according to some embodiments of the present disclosure;

[0130] Fig. 11B A diagram showing another step of a method for preparing a light-emitting substrate according to some embodiments of the present disclosure;

[0131] Fig.12 A structural diagram of a light emitting device provided according to some embodiments of the present disclosure;

[0132] Fig.13 is an ultraviolet absorption spectrum diagram of a carrier injection layer provided according to some embodiments of the present disclosure;

[0133] Fig.14 Another ultraviolet absorption spectrum diagram of the carrier injection layer provided according to some embodiments of the present disclosure;

[0134] Fig.15 A fluorescence microscope image of a light-emitting device provided according to some embodiments of the present disclosure;

[0135] Fig.16 A curve diagram showing a change in current density versus voltage of a light-emitting device provided according to some embodiments of the present disclosure;

[0136] Fig.17 A curve diagram showing a change in brightness of a light-emitting device according to some embodiments of the present disclosure as a function of voltage;

[0137] Fig.18 A curve diagram showing a change in current efficiency versus voltage of a light emitting device provided according to some embodiments of the present disclosure;

[0138] Fig.19 A curve diagram showing the change of external quantum efficiency of a light-emitting device according to some embodiments of the present disclosure as a function of voltage;

[0139] Fig. 20A fluorescence microscope image of a light-emitting device provided according to some embodiments of the present disclosure;

[0140] Fig.21 A diagram showing lighting test results of a light emitting device provided according to some embodiments of the present disclosure;

[0141] Fig. 22 This is an electroluminescent fluorescence microscope photograph of a light-emitting device provided according to some embodiments of the present disclosure;

[0142] Fig.23 The figure is a graph showing the variation of the electroluminescence intensity of the light-emitting device according to some embodiments of the present disclosure with the wavelength. DETAILED DESCRIPTION

[0143] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

[0144] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms thereof, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open, inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0145] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0146] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0147] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0148] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of variation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0149] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within the acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism may be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity may also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality may be, for example, the difference between the two equalities is less than or equal to 5% of either one.

[0150] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0151] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of the layers and the area of ​​the regions are exaggerated for clarity. Therefore, variations in the shapes relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0152] As described in the background, based on the quantum confinement effect, quantum dots (Quantum Dot, QD) have excellent luminescent properties such as broadband absorption, narrowband emission and continuously adjustable peak position. At the same time, quantum dots have solution processability, which avoids the use of expensive vacuum equipment, so that quantum dot light emitting diodes (Quantum Dot Light Emitting Diodes, QLED) with quantum dots as luminescent materials are widely used in display lighting, solar cells and photoelectric detection and other fields. Patterning is to pixelate quantum dots in solution, which is the only way to turn quantum dots into molded optoelectronic devices and even commercial products. The indirect method using traditional photoresist can realize the patterning of quantum dots, but due to the incompatibility problem between quantum dot solvent and photoresist solvent, and the introduction of photoresist will reduce the luminescent properties of quantum dots themselves, it is difficult to realize quantum dot patterning with the help of traditional photoresist process. The preparation technology of the light-emitting layer of quantum dot light-emitting diodes mainly includes inkjet printing technology, photolithography technology, transfer technology, etc., and photolithography technology is a more promising method for preparing high-resolution quantum dot light-emitting diodes.

[0153] The photoresponsive surface ligands give quantum dots the ability to be directly patterned by photolithography. The main principle is to use photochemical reactions such as decomposition or cross-linking of photosensitive groups to change the colloidal stability of quantum dots before and after the photochemical reaction, and achieve the purpose of selective patterning through development.

[0154] Photolithography technology is the technology of realizing quantum dot patterning by means of exposure and development.

[0155] like Figure 1 As shown, a process for preparing a light-emitting pattern 23 of a light-emitting substrate 1 is exemplarily introduced. Figure 1 In the last sub-figure (i.e., the sub-figure corresponding to step S8), the light-emitting substrate 1 includes: a substrate 11, a pixel defining layer 12 disposed on the substrate 11, and a plurality of light-emitting devices, each of which includes a light-emitting pattern 23. The pixel defining layer 12 has a plurality of openings Q, and the plurality of light-emitting devices can be disposed in a one-to-one correspondence with the plurality of openings Q.

[0156] Exemplarily, the plurality of light emitting devices include: a red light emitting device R, a green light emitting device G and a blue light emitting device B. The following describes the process of sequentially forming a light emitting pattern R1 of the red light emitting device R, a light emitting pattern G1 of the green light emitting device G and a light emitting pattern B1 of the blue light emitting device B.

[0157] like Figure 1 As shown, the process includes steps: S1 to S8.

[0158] In order to improve the efficiency of injecting electrons and holes into the luminescent pattern 23 , a front film layer 13 is further provided between the substrate 11 and the luminescent pattern 23 . The front film layer 13 is, for example, one or two of an electron injection layer, an electron transport layer, a hole injection layer and a hole transport layer.

[0159] S1: coating a red quantum dot (RQD) luminescent material on the side of the front film layer 13 away from the substrate 11 to form a red initial luminescent pattern R10, exposing the red initial luminescent pattern R10, and the area where the red light-emitting device R is pre-formed is the exposed area.

[0160] S2: developing the red initial light emitting pattern R10, the red initial light emitting pattern R10 in the exposed area is retained, and the light emitting pattern R1 of the red light emitting device R is formed.

[0161] S3: coating a green quantum dot (GQD) luminescent material on the luminescent pattern R1 of the red light emitting device R and the side of the front film layer 13 away from the substrate 11 to form a green initial luminescent pattern G10.

[0162] S4: exposing the green initial light emitting pattern G10, and the area where the green light emitting device G is pre-formed is the exposed area.

[0163] S5: developing the green initial light emitting pattern G10, the green initial light emitting pattern G10 in the exposed area remains, and the light emitting pattern G1 of the green light emitting device G is formed.

[0164] S6: coating a blue quantum dot (BQD) luminescent material on the luminescent pattern G1 of the green light emitting device G, the luminescent pattern R1 of the red light emitting device R, and the side of the front film layer 13 away from the substrate 11 to form a blue initial luminescent pattern B10.

[0165] S7: exposing the blue initial light emitting pattern B10, and the area where the blue light emitting device B is pre-formed is the exposed area.

[0166] S8: developing the blue initial light emitting pattern B10, the blue initial light emitting pattern B10 in the exposed area is retained, and the light emitting pattern B1 of the blue light emitting device B is formed.

[0167] However, in the actual process of preparing the light-emitting pattern 23 of the light-emitting substrate 1, as Figure 2As shown, due to certain interactions between the quantum dot luminescent material and the material of the film layer adjacent thereto, the interactions include but are not limited to van der Waals force, electrostatic force, gravity, capillary force, etc., so that the patterning method has the problem of incomplete elution of the quantum dot luminescent material of the previous color (such as red quantum dot luminescent material), which will cause the quantum dot luminescent material of the previous color (such as red quantum dot luminescent material) to remain on the side of the luminescent pattern of the next color (such as the luminescent pattern G1 of the green light-emitting device G) close to the substrate 11. At the same time, the patterning method also has the problem of incomplete elution of the quantum dot luminescent material of the next color (such as blue quantum dot luminescent material), which will cause the quantum dot luminescent material of the next color (such as blue quantum dot luminescent material) to remain on the side of the luminescent pattern of the previous color (such as the luminescent pattern G1 of the green light-emitting device G) far from the substrate 11.

[0168] For example, Figure 2 As shown, taking the sequential formation of the light-emitting pattern R1 of the red light-emitting device R, the light-emitting pattern G1 of the green light-emitting device G, and the light-emitting pattern B1 of the blue light-emitting device B as an example, on the side of the light-emitting pattern R1 of the red light-emitting device R away from the substrate 11, there will be a residual layer G0 formed by the green quantum dot light-emitting material and a residual layer B0 formed by the blue quantum dot light-emitting material. On the side of the light-emitting pattern G1 of the green light-emitting device G close to the substrate 11, there will be a residual layer R0 formed by the red quantum dot light-emitting material, and on the side of the light-emitting pattern G1 of the green light-emitting device G away from the substrate 11, there will be a residual layer B0 formed by the blue quantum dot light-emitting material. On the side of the light-emitting pattern B1 of the blue light-emitting device B close to the substrate 11, there will be a residual layer R0 formed by the red quantum dot light-emitting material and a residual layer G0 formed by the green quantum dot light-emitting material.

[0169] The residual layer formed by this quantum dot luminescent material will cause color mixing problems. When the light-emitting device is lit, the luminescent spectrum is prone to impurity, thus affecting the performance of the device.

[0170] Based on the above problems, Figure 3A to Figure 3B As shown, some embodiments of the present disclosure provide a light-emitting substrate 10, which includes: a substrate 11 and a plurality of light-emitting devices 20. The plurality of light-emitting devices 20 are disposed on the substrate 11 and arranged along a first direction X, and the first direction X is parallel to a plane X1 where the substrate 11 is located; each of the plurality of light-emitting devices 20 includes: a first electrode 21, a second electrode 22, and a light-emitting pattern 23 disposed between the first electrode 21 and the second electrode 22, and the first electrode 21 is closer to the substrate 11 than the second electrode 22.

[0171] For example, Figure 3A to Figure 3BAs shown, the light emitting substrate 10 further includes a pixel defining layer 12 disposed on the substrate 11 . The pixel defining layer 12 has a plurality of openings Q. The plurality of light emitting devices 20 may be disposed in one-to-one correspondence with the plurality of openings Q.

[0172] In some examples, the first electrode 21 may be an anode, in which case the second electrode 22 is a cathode. In other examples, the first electrode 21 may be a cathode, in which case the second electrode 22 is an anode.

[0173] The light-emitting device 20 has the following principle of light emission: through a circuit connected with an anode and a cathode, the anode is used to inject holes into the light-emitting pattern 23, and the cathode is used to inject electrons into the light-emitting pattern 23. The electrons and holes form excitons in the light-emitting pattern 23, and the excitons return to the ground state through radiation transition to emit photons.

[0174] like Figure 3A to Figure 3B As shown, a plurality of light-emitting devices 20 include: at least one first light-emitting device 201, each of the at least one first light-emitting device 201 includes: a first light-emitting pattern 23a, and a first carrier transport layer 131 and a first carrier injection layer 141 arranged between the substrate 11 and the first light-emitting pattern 23a; the first carrier transport layer 131 is closer to the first light-emitting pattern 23a than the first carrier injection layer 141; wherein the material of the first light-emitting pattern 23a includes: a first cross-linked light-emitting material; the material of the first carrier transport layer 131 includes: a first cross-linked carrier transport material; the material of the first carrier injection layer 141 includes: a first cross-linked carrier injection material.

[0175] For example, Figure 3A to Figure 3B As shown, the first carrier injection layer 141 , the first carrier transport layer 131 , and the first light emitting pattern 23 a are in contact with each other in sequence.

[0176] Exemplarily, the first light-emitting device 201 may be a light-emitting device that emits red light, and the first quantum dot material may be a red quantum dot light-emitting material.

[0177] In some examples, the first cross-linked luminescent material is generated by cross-linking the first quantum dot material under light radiation, and at this time, the first quantum dot material is a cross-linkable organic material. For example, the first quantum dot material includes a first quantum dot body and a ligand material, wherein the ligand material is a cross-linkable organic material. That is to say, by exposing the first quantum dot material in the area where the first light-emitting device 201 is located, the self-cross-linking of the first quantum dot material is achieved to form a first cross-linked luminescent material. The solubility of the first quantum dot material in the first solvent is greater than the solubility of the first cross-linked luminescent material in the first solvent. Then, development is performed, the first cross-linked luminescent material is insoluble in the developer (for example, the first solvent), and the first quantum dot material is soluble in the developer. It is used to remove the first quantum dot material in the remaining areas outside the area where the first light-emitting device 201 is located, thereby forming a patterned first luminescent pattern 23a.

[0178] In other examples, the first cross-linked luminescent material is generated by cross-linking the first quantum dot material and the first photosensitive material under light radiation, that is, by exposing the first quantum dot material and the first photosensitive material in the area where the first light-emitting device 201 is located, the cross-linking of the first quantum dot material and the first photosensitive material is achieved to form the first cross-linked luminescent material. The solubility of the first quantum dot material and the first photosensitive material in the first solvent is greater than the solubility of the first cross-linked luminescent material in the first solvent. Then, development is performed, the first cross-linked luminescent material is insoluble in the developer (for example, the first solvent), and the first quantum dot material and the first photosensitive material are soluble in the developer. It is used to remove the first quantum dot material and the first photosensitive material in the remaining areas other than the area where the first light-emitting device 201 is located, thereby forming a patterned first luminescent pattern 23a.

[0179] Exemplarily, the first solvent is a first type solvent, and the first type solvent includes at least one of octane and propylene glycol methyl ether acetate (PMA).

[0180] Exemplarily, the first carrier transport layer 131 is an electron transport layer, and the first carrier injection layer 141 is an electron injection layer. In this case, the first electrode 21 is a cathode, and the second electrode 22 is an anode. The first light emitting device 201 is an "inverted" light emitting device.

[0181] Exemplarily, the first carrier transport layer 131 is a hole transport layer, the first carrier injection layer 141 is a hole injection layer, in which case the first electrode 21 is an anode and the second electrode 22 is a cathode. The first light emitting device 201 is a "upright" light emitting device.

[0182] In some examples, the first cross-linked carrier transport material is generated by cross-linking the first carrier transport material under light radiation. At this time, the first carrier transport material is a cross-linkable organic material. That is, by exposing the first carrier transport material in the area where the first light-emitting device 201 is located, self-cross-linking of the first carrier transport material is achieved to form the first cross-linked carrier transport material. The solubility of the first carrier transport material in the second solvent is greater than the solubility of the first cross-linked carrier transport material in the second solvent. Then, development is performed, the first cross-linked carrier transport material is insoluble in the developer (for example, the second solvent), and the first carrier transport material is soluble in the developer. It is used to remove the first carrier transport material in the remaining areas outside the area where the first light-emitting device 201 is located, thereby forming a patterned first carrier transport layer 131.

[0183] In other examples, the first cross-linked carrier transport material is generated by cross-linking the first carrier transport material and the second photosensitive material under light radiation. That is, by exposing the first carrier transport material and the second photosensitive material in the area where the first light-emitting device 201 is located, the cross-linking of the first carrier transport material and the second photosensitive material is achieved to form the first cross-linked carrier transport material. The solubility of the first carrier transport material and the second photosensitive material in the second solvent is greater than the solubility of the first cross-linked carrier transport material in the second solvent. Then, development is performed, the first cross-linked carrier transport material is insoluble in the developer (for example, the second solvent), and the first carrier transport material and the second photosensitive material are soluble in the developer. It is used to remove the first carrier transport material and the second photosensitive material in the remaining areas outside the area where the first light-emitting device 201 is located, thereby forming a patterned first carrier transport layer 131.

[0184] Exemplarily, the second solvent is a second type solvent, and the second type solvent includes at least one of toluene, chlorobenzene or dichlorotoluene.

[0185] In some examples, the first cross-linked carrier injection material is generated by cross-linking the first carrier injection material under light radiation. At this time, the first carrier injection material is a cross-linkable organic material. That is to say, by exposing the first carrier injection material in the area where the first light-emitting device 201 is located, the self-cross-linking of the first carrier injection material is achieved to form the first cross-linked carrier injection material. The solubility of the first carrier injection material in the third solvent is greater than the solubility of the first cross-linked carrier injection material in the third solvent. Then, development is performed, the first cross-linked carrier injection material is insoluble in the developer (for example, the third solvent), and the first carrier injection material is soluble in the developer. It is used to remove the first carrier injection material in the remaining areas outside the area where the first light-emitting device 201 is located, thereby forming a patterned first carrier injection layer 141.

[0186] In other examples, the first cross-linked carrier injection material is generated by cross-linking the first carrier injection material and the third photosensitive material under light radiation. That is, by exposing the first carrier injection material and the third photosensitive material in the area where the first light-emitting device 201 is located, the cross-linking of the first carrier injection material and the third photosensitive material is achieved to form the first cross-linked carrier injection material. The solubility of the first carrier injection material and the third photosensitive material in the third solvent is greater than the solubility of the first cross-linked carrier injection material in the third solvent. Then, development is performed, the first cross-linked carrier injection material is insoluble in the developer (for example, the third solvent), and the first carrier injection material and the third photosensitive material are soluble in the developer. It is used to remove the first carrier injection material and the third photosensitive material in the remaining areas outside the area where the first light-emitting device 201 is located, thereby forming a patterned first carrier injection layer 141.

[0187] Exemplarily, the third solvent is a third type solvent, and the third type solvent includes at least one of water, ethanol, methanol, N,N-dimethylformamide, N-methylformamide and dichlorothionyl.

[0188] The following is an exemplary introduction to a method for preparing at least one first light-emitting device, such as Figure 4 As shown, it includes M1 to M4.

[0189] M1: forming a first electrode layer 21 a on the substrate 11 ; the first electrode layer 21 a includes a first electrode 21 of at least one first light emitting device 201 .

[0190] Exemplarily, the process of forming the first electrode layer 21 a is magnetron sputtering.

[0191] Exemplarily, the first electrode 21 corresponds to the opening Q of the pixel defining layer 12 one by one.

[0192] M2: a first initial carrier injection layer 141 i , a first initial carrier transport layer 131 i , and a first initial light emitting pattern 23 ai are sequentially formed on a side of the first electrode layer 21 a away from the substrate 11 .

[0193] Exemplarily, the process for forming the first initial carrier injection layer 141i is any one of spin coating, screen printing, doctor blade coating and drop coating, and the process solution is the third solution, wherein the solvent of the third solution is the third solvent, and the solute of the third solution is the material for forming the first initial carrier injection layer 141i. It should be noted that, in the case where the first cross-linked carrier injection material is formed by self-cross-linking of the first carrier injection material, the material for forming the first initial carrier injection layer 141i is the first carrier injection material. Alternatively, in the case where the first cross-linked carrier injection material is formed by cross-linking the first carrier injection material and the third photosensitive material, the materials for forming the first initial carrier injection layer 141i are the first carrier injection material and the third photosensitive material.

[0194] Exemplarily, the process for forming the first initial carrier transport layer 131i is any one of spin coating, screen printing, doctor blade coating and drop coating, and the process solution is the second solution, wherein the solvent of the second solution is the second solvent, and the solute of the second solution is the material for forming the first initial carrier transport layer 131i. It should be noted that, in the case where the first cross-linked carrier transport material is formed by self-cross-linking of the first carrier transport material, the material for forming the first initial carrier transport layer 131i is the first carrier transport material. Alternatively, in the case where the first cross-linked carrier transport material is formed by cross-linking the first carrier transport material and the second photosensitive material, the material for forming the first initial carrier transport layer 131i is the first carrier transport material and the second photosensitive material.

[0195] Exemplarily, the process for forming the first initial light-emitting pattern 23ai is any one of spin coating, screen printing, doctor blade coating and drop coating, and the process solution is the first solution, wherein the solvent of the first solution is the first solvent, and the solute of the first solution is the material for forming the first initial light-emitting pattern 23ai. It should be noted that, in the case where the first cross-linked light-emitting material is formed by self-cross-linking of the first quantum dot material, the material for forming the first initial light-emitting pattern 23ai is the first quantum dot material. Alternatively, in the case where the first cross-linked light-emitting material is formed by cross-linking the first quantum dot material and the first photosensitive material, the materials for forming the first initial light-emitting pattern 23ai are the first quantum dot material and the first photosensitive material.

[0196] M3: Expose the stacked first initial carrier injection layer 141i, the first initial carrier transport layer 131i, and the first initial light-emitting pattern 23ai to transform the material of the exposed portion of the first initial carrier injection layer 141i into the first cross-linked carrier injection material, transform the material of the exposed portion of the first initial carrier transport layer 131i into the first cross-linked carrier transport material, and transform the material of the exposed portion of the first initial light-emitting pattern 23ai into the first cross-linked light-emitting material.

[0197] It can be understood that the above-mentioned exposed area is the area corresponding to at least one first light-emitting device 201. This step can change the solubility of the material of the first initial carrier injection layer 141i, the first initial carrier transport layer 131i and the first initial light-emitting pattern 23ai in the area where at least one first light-emitting device 201 is located by exposing the first initial carrier injection layer 141i, the first initial carrier transport layer 131i and the first initial light-emitting pattern 23ai in the area where at least one first light-emitting device 201 is located.

[0198] That is, at this time, the portion of the first initial carrier injection layer 141i located in the area where the first light-emitting device 201 is located is transformed into the first cross-linked carrier injection material, and the material of the portion of the first initial carrier injection layer 141i located in the remaining area except the area where the first light-emitting device 201 is located remains unchanged, and is still the material forming the first initial carrier injection layer 141i. The first cross-linked carrier injection material is insoluble in the developer (third solvent), and the material forming the first initial carrier injection layer 141i is soluble in the developer (third solvent).

[0199] The portion of the first initial carrier transport layer 131i located in the area where the first light-emitting device 201 is located is transformed into the first cross-linked carrier transport material, and the material of the portion of the first initial carrier transport layer 131i located in the remaining area except the area where the first light-emitting device 201 is located remains unchanged, and is still the material forming the first initial carrier transport layer 131i. The first cross-linked carrier transport material is insoluble in the developer (the second solvent), and the material forming the first initial carrier transport layer 131i is soluble in the developer (the second solvent).

[0200] The portion of the first initial light-emitting pattern 23ai located in the area where the first light-emitting device 201 is located is transformed into the first cross-linked light-emitting material, and the material of the portion of the first initial light-emitting pattern 23ai located in the remaining area except the area where the first light-emitting device 201 is located remains unchanged, and is still the material forming the first initial light-emitting pattern 23ai. The first cross-linked light-emitting material is insoluble in the developer (first solvent), and the material forming the first initial light-emitting pattern 23ai is soluble in the developer (first solvent).

[0201] It should be noted that if Figure 4 As shown, a first initial carrier injection layer 141i, a first initial carrier transport layer 131i and a first initial light emitting pattern 23ai are also formed on the side of the pixel defining layer 12 away from the substrate 11. Figure 4It is shown in the figure that the thickness of the first initial carrier injection layer 141i, the first initial carrier transport layer 131i, and the first initial light-emitting pattern 23ai on the side of the pixel defining layer 12 away from the substrate 11 is inconsistent with the thickness of the first initial carrier injection layer 141i, the first initial carrier transport layer 131i, and the first initial light-emitting pattern 23ai in the opening Q of the pixel defining layer 12. However, this is only to indicate that the first initial carrier injection layer 141i, the first initial carrier transport layer 131i, and the first initial light-emitting pattern 23ai exist on the side of the pixel defining layer 12 away from the substrate 11, and their thickness is not limited.

[0202] M4: developing the stacked first initial carrier injection layer 141i, the first initial carrier transport layer 131i, and the first initial light emitting pattern 23ai to form the stacked first carrier injection layer 141, the first carrier transport layer 131, and the first light emitting pattern 23a.

[0203] Exemplarily, M4 may include the following three steps of development:

[0204] A developer (first solvent) is used to remove the portion of the first initial light-emitting pattern 23ai located in the remaining areas of the multiple light-emitting devices 20 except the area where the first light-emitting device 201 is located (the material forming the first initial light-emitting pattern 23ai will remain near the substrate 11 to form a first temporary residual layer), while the portion of the first initial light-emitting pattern 23ai located in the area where the first light-emitting device 201 is located is retained, thereby obtaining at least one first light-emitting pattern 23a.

[0205] The developer (second solvent) is used to remove the first initial carrier transport layer 131i located in the remaining areas of the plurality of light-emitting devices 20 except the area where the first light-emitting device 201 is located (the material forming the first initial carrier transport layer 131i will remain near the substrate 11 to form a second temporary residual layer), and at the same time, the first temporary residual layer on the first initial carrier transport layer 131i located in the remaining areas of the plurality of light-emitting devices 20 except the area where the first light-emitting device 201 is located is also removed to avoid the material forming the first initial light-emitting pattern 23ai from remaining in the remaining areas of the plurality of light-emitting devices 20 except the area where the first light-emitting device 201 is located. The first initial carrier transport layer 131i located in the area where the first light-emitting device 201 is located is retained, thereby obtaining the first carrier transport layer 131 of at least one first light-emitting device 201.

[0206] The developer (third solvent) is used to remove the first initial carrier injection layer 141i located in the remaining areas of the plurality of light-emitting devices 20 except the area where the first light-emitting device 201 is located (the material forming the first initial carrier injection layer 141i may remain near the substrate 11, for example Figure 4 The first initial residual pattern 330 shown in FIG. 3 is shown in FIG. 3 , and the first initial residual pattern 330 is described in the subsequent content, which will not be described in detail here. Meanwhile, the second temporary residual layer on the first initial carrier injection layer 141i located in the remaining areas of the plurality of light-emitting devices 20 except the area where the first light-emitting device 201 is located is also removed, thereby avoiding the residue of the material forming the first carrier transport layer 131 in the remaining areas of the plurality of light-emitting devices 20 except the area where the first light-emitting device 201 is located. The portion of the first initial carrier injection layer 141i located in the area where the first light-emitting device 201 is located is retained, thereby obtaining the first carrier injection layer 141 of at least one first light-emitting device 201.

[0207] It should be noted that after the first light emitting pattern 23 a is formed, a first initial residual pattern 330 also exists on the side of the pixel defining layer 12 away from the substrate 11 .

[0208] Compared with the patterning of quantum dot luminescent materials by direct photolithography in the related art, by using a material that can undergo a cross-linking reaction under light irradiation as the material of the two front film layers (i.e., the first carrier transport layer 131 and the first carrier injection layer 141), on the one hand, the two front film layers can be used as double sacrificial layers to remove the first quantum dot material located in the remaining area except the area where the first light-emitting device 201 is located, thereby avoiding the first quantum dot material from forming residues in the remaining area except the area where the first light-emitting device 201 is located, and further solving the problem of color mixing caused by the residual quantum dot luminescent material of the previous color on the side of the next color luminescent pattern close to the substrate 11 in the related art. On the other hand, since the above-mentioned second temporary residual layer is a part of the first initial carrier transport layer 131i, and the first initial carrier transport layer 131i is a film layer in contact with the first initial luminescent pattern 23ai. The above-mentioned step of developing with a developer (third solvent) can avoid the second temporary residual layer from remaining in the remaining areas of the multiple light-emitting devices 20 except the area where the first light-emitting device 201 is located. In particular, it can avoid the second temporary residual layer from remaining in the areas where other light-emitting devices except the first light-emitting device 201 are located among the multiple light-emitting devices 20. In this way, the problem of color mixing can be further solved, the problem of impure light-emitting spectrum can be avoided, and the device performance can be effectively improved.

[0209] The above is an exemplary introduction to the case where the plurality of light emitting devices 20 include at least one first light emitting device 201. The following is an exemplary introduction to the case where the plurality of light emitting devices 20 include at least one second light emitting device 202.

[0210] In some embodiments, Figure 3A to Figure 3BAs shown, the multiple light-emitting devices 20 also include: at least one second light-emitting device 202, each of the at least one second light-emitting device 202 includes: a second light-emitting pattern 23b, and a second sacrificial layer group 13B arranged between the substrate 11 and the second light-emitting pattern 23b, the second sacrificial layer group 13B includes a second carrier transport layer 132; wherein the material of the second light-emitting pattern 23b includes: a second cross-linked light-emitting material; the material of the second carrier transport layer 132 includes: a second cross-linked carrier transport material.

[0211] For example, Figure 3A As shown, the second sacrificial layer group 13B is a second carrier transport layer 132, and the second carrier transport layer 132 is in contact with the second light-emitting pattern 23b. It should be noted that the thickness of the second carrier transport layer 132 is not limited here. For example, the first thickness is defined as the sum of the thicknesses of the first carrier transport layer 131 and the first carrier injection layer 141; with the first thickness as a reference, the thickness of the second carrier transport layer 132 can be less than the first thickness, or can be equal to the first thickness, or can be greater than the first thickness.

[0212] For example, the second light-emitting device 202 may be a light-emitting device that emits green light, and the second quantum dot material may be a green quantum dot light-emitting material.

[0213] In some examples, the second cross-linked luminescent material is generated by cross-linking the second quantum dot material under light radiation, and at this time, the second quantum dot material is a cross-linkable organic material. For example, the second quantum dot material includes a second quantum dot body and a ligand material, wherein the ligand material is a cross-linkable organic material. That is to say, by exposing the second quantum dot material in the area where the second light-emitting device 202 is located, the self-cross-linking of the second quantum dot material is achieved to form a second cross-linked luminescent material. The solubility of the second quantum dot material in the fourth solvent is greater than the solubility of the second cross-linked luminescent material in the fourth solvent. Then, development is performed, the second cross-linked luminescent material is insoluble in the developer (for example, the fourth solvent), and the second quantum dot material is soluble in the developer. It is used to remove the second quantum dot material in the remaining areas outside the area where the second light-emitting device 202 is located, thereby forming a patterned second luminescent pattern 23b.

[0214] In other examples, the second cross-linked luminescent material is generated by cross-linking the second quantum dot material and the fourth photosensitive material under light radiation, that is, by exposing the second quantum dot material and the fourth photosensitive material in the area where the second light-emitting device 202 is located, the second quantum dot material and the fourth photosensitive material are cross-linked to form the second cross-linked luminescent material. The solubility of the second quantum dot material and the fourth photosensitive material in the fourth solvent is greater than the solubility of the second cross-linked luminescent material in the fourth solvent. Then, development is performed, the second cross-linked luminescent material is insoluble in the developer (for example, the fourth solvent), and the second quantum dot material and the second photosensitive material are soluble in the developer. It is used to remove the second quantum dot material and the fourth photosensitive material in the remaining areas outside the area where the second light-emitting device 202 is located, thereby forming a patterned second luminescent pattern 23b.

[0215] Exemplarily, the fourth solvent is a first type solvent, and the first type solvent includes at least one of octane and propylene glycol methyl ether acetate (PMA).

[0216] In some examples, the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material under light radiation. At this time, the second carrier transport material is a cross-linkable organic material. That is, by exposing the second carrier transport material in the area where the second light-emitting device 202 is located, the self-cross-linking of the second carrier transport material is achieved to form a second cross-linked carrier transport material. The solubility of the second carrier transport material in the fifth solvent is greater than the solubility of the second cross-linked carrier transport material in the fifth solvent. Then, development is performed, the second cross-linked carrier transport material is insoluble in the developer (for example, the fifth solvent), and the second carrier transport material is soluble in the developer. It is used to remove the second carrier transport material in the remaining areas outside the area where the second light-emitting device 202 is located, thereby forming a patterned second carrier transport layer 132.

[0217] In other examples, the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material and the fifth photosensitive material under light radiation. That is, by exposing the second carrier transport material and the fifth photosensitive material in the area where the second light-emitting device 202 is located, the cross-linking of the second carrier transport material and the fifth photosensitive material is achieved to form a second cross-linked carrier transport material. The solubility of the second carrier transport material and the fifth photosensitive material in the fifth solvent is greater than the solubility of the second cross-linked carrier transport material in the fifth solvent. Then, development is performed, the second cross-linked carrier transport material is insoluble in the developer (for example, the fifth solvent), and the second carrier transport material and the fifth photosensitive material are soluble in the developer. It is used to remove the second carrier transport material and the fifth photosensitive material in the remaining areas outside the area where the second light-emitting device 202 is located, thereby forming a patterned second carrier transport layer 132.

[0218] Exemplarily, the fifth solvent is a second type solvent, and the second type solvent includes at least one of toluene, chlorobenzene or dichlorotoluene.

[0219] The following is an exemplary method for preparing at least one second light emitting device 202. Figure 5 As shown, it includes N1 to N3.

[0220] N1: A second initial carrier transport layer 132i and a second initial light emitting pattern 23bi are sequentially formed on the first electrode layer 21a and on a side of at least one first light emitting device 201 away from the substrate 11.

[0221] Exemplarily, the process for forming the second initial carrier transport layer 132i is any one of spin coating, screen printing, doctor blade coating and drop coating, and the process solution is the fifth solution, wherein the solvent of the fifth solution is the fifth solvent, and the solute of the fifth solution is the material for forming the second initial carrier transport layer 132i. It should be noted that, in the case where the second cross-linked carrier transport material is formed by self-cross-linking of the second carrier transport material, the material for forming the second initial carrier transport layer 132i is the second carrier transport material. Alternatively, in the case where the second cross-linked carrier transport material is formed by cross-linking the second carrier transport material and the fifth photosensitive material, the material for forming the second initial carrier transport layer 132i is the second carrier transport material and the fifth photosensitive material.

[0222] Exemplarily, the process for forming the second initial light-emitting pattern 23bi is any one of spin coating, screen printing, doctor blade coating and drop coating, and the process solution is the fourth solution, wherein the solvent of the fourth solution is the fourth solvent, and the solute of the fourth solution is the material for forming the second initial light-emitting pattern 23bi. It should be noted that, in the case where the second cross-linked light-emitting material is formed by self-cross-linking of the second quantum dot material, the material for forming the second initial light-emitting pattern 23bi is the second quantum dot material. Alternatively, in the case where the second cross-linked light-emitting material is formed by cross-linking the second quantum dot material and the fourth photosensitive material, the materials for forming the second initial light-emitting pattern 23bi are the second quantum dot material and the fourth photosensitive material.

[0223] For example, Figure 5 As shown, when a first initial residual pattern 330 remains on a side of the first electrode layer 21 a away from the substrate 11 , a second initial carrier transport layer 132 i located on one side of the first electrode layer 21 a is formed on a surface of the first initial residual pattern 330 .

[0224] For example, Figure 5As shown, when a first initial residual pattern 330 remains on a side of the pixel defining layer 12 away from the substrate 11 , a second initial carrier transport layer 132 i located on one side of the pixel defining layer 12 is formed on a surface of the first initial residual pattern 330 .

[0225] N2: Expose the stacked second initial carrier transport layer 132i and the second initial light-emitting pattern 23bi to transform the exposed material of the second initial carrier transport layer 132i into the second cross-linked carrier transport material, and transform the exposed material of the second initial light-emitting pattern 23bi into the second cross-linked light-emitting material.

[0226] It can be understood that the exposed area is the area corresponding to the at least one second light-emitting device 202. This step can change the solubility of the material of the second initial carrier transport layer 132i and the second initial light-emitting pattern 23bi in the area where the at least one second light-emitting device 202 is located by exposing the area where the at least one second light-emitting device 202 is located in the second initial carrier transport layer 132i and the second initial light-emitting pattern 23bi.

[0227] That is, at this time, the portion of the second initial carrier transport layer 132i located in the area where the second light-emitting device 202 is located is transformed into the second cross-linked carrier transport material, and the material of the portion of the second initial carrier transport layer 132i located in the remaining area except the area where the second light-emitting device 202 is located remains unchanged, and is still the material forming the second initial carrier transport layer 132i. The first cross-linked carrier transport material is insoluble in the developer (the fifth solvent), and the material forming the second initial carrier transport layer 132i is soluble in the developer (the fifth solvent).

[0228] The portion of the second initial light-emitting pattern 23bi located in the area where the second light-emitting device 202 is located is transformed into the second cross-linked light-emitting material, and the material of the portion of the second initial light-emitting pattern 23bi located in the remaining area except the area where the second light-emitting device 202 is located remains unchanged, and is still the material forming the second initial light-emitting pattern 23bi. The second cross-linked light-emitting material is insoluble in the developer (the fourth solvent), and the material forming the second initial light-emitting pattern 23bi is soluble in the developer (the fourth solvent).

[0229] It should be noted that if Figure 5 As shown, a second initial carrier transport layer 132i and a second initial light emitting pattern 23bi are also formed on the side of the pixel defining layer 12 away from the substrate 11. Figure 5It is shown in the figure that the thickness of the second initial carrier transport layer 132i and the second initial light-emitting pattern 23bi on the side of the pixel defining layer 12 away from the substrate 11 is inconsistent with the thickness of the second initial carrier transport layer 132i and the second initial light-emitting pattern 23bi in the opening Q of the pixel defining layer 12. However, this is only to indicate that the second initial carrier transport layer 132i and the second initial light-emitting pattern 23bi exist on the side of the pixel defining layer 12 away from the substrate 11, and their thickness is not limited.

[0230] N3: The stacked second initial carrier transport layer 132i and the second initial light emitting pattern 23bi are developed to form the stacked second carrier transport layer 132 and the second light emitting pattern 23b.

[0231] Exemplarily, N3 may include the following two steps of development:

[0232] A developing solution (a fourth solvent) is used to remove the portion of the second initial light-emitting pattern 23bi located in the remaining areas of the multiple light-emitting devices 20 except the area where the second light-emitting device 202 is located (the material forming the second initial light-emitting pattern 23bi will remain near the substrate 11 to form a fourth temporary residual layer), while the portion of the second initial light-emitting pattern 23bi located in the area where the second light-emitting device 202 is located is retained, thereby obtaining at least one second light-emitting pattern 23b.

[0233] The developer (fifth solvent) is used to remove the second initial carrier transport layer 132i located in the remaining area of ​​the plurality of light-emitting devices 20 except the area where the second light-emitting device 202 is located (the material forming the second initial carrier transport layer 132i may remain near the substrate 11, for example Figure 5 The second initial residual pattern 350a shown in FIG. 3 is shown in FIG. 3 , and the introduction of the second initial residual pattern 350a is described in the subsequent content, which will not be described in detail here. Meanwhile, the fourth temporary residual layer on the second initial carrier transport layer 132i located in the remaining areas of the plurality of light-emitting devices 20 except the area where the second light-emitting device 202 is located is also removed to avoid the material forming the second initial light-emitting pattern 23bi remaining in the remaining areas of the plurality of light-emitting devices 20 except the area where the second light-emitting device 202 is located. The portion of the second initial carrier transport layer 132i located in the area where the second light-emitting device 202 is located is retained, thereby obtaining a second carrier transport layer 132 of at least one second light-emitting device 202.

[0234] It should be noted that after the second light emitting pattern 23 b is formed, a second initial residual pattern 350 a also exists on the side of the pixel defining layer 12 away from the substrate 11 .

[0235] Compared with the patterning of quantum dot luminescent materials by direct photolithography in the related art, by using a material that can undergo a cross-linking reaction under light irradiation as the material of the second sacrificial layer group 13B (i.e., the second carrier transport layer 132), the second sacrificial layer group 13B can be used as a sacrificial layer to remove the second quantum dot material located in the remaining area except the area where the second light-emitting device 202 is located, thereby avoiding the second quantum dot material from forming residues in the remaining area except the area where the second light-emitting device 202 is located. In this way, on the one hand, the problem of color mixing caused by the residue of the quantum dot luminescent material of the previous color (such as the second quantum dot luminescent material) on the side close to the substrate 11 of the next color luminescent pattern (such as the third luminescent pattern 23c) in the related art can be solved. On the other hand, the problem of color mixing caused by the residue of the quantum dot luminescent material of the next color (such as the second quantum dot luminescent material) on the side far from the substrate 11 of the previous color luminescent pattern (such as the first luminescent pattern 23a) in the related art can be solved.

[0236] In some embodiments, Figure 3B As shown, in the case where the second light-emitting device 202 includes a second light-emitting pattern 23b and a second sacrificial layer group 13B, and the second sacrificial layer group 13B includes a second carrier transport layer 132, the second sacrificial layer group 13B also includes: a second carrier injection layer 142; the second carrier injection layer 142 is located on the side of the second carrier transport layer 132 close to the substrate, and the material of the second carrier injection layer 142 includes: a second cross-linked carrier injection material.

[0237] For example, Figure 3B As shown, the second sacrificial layer group 13B is composed of a second carrier injection layer 142 and a second carrier injection layer 142, and the second carrier injection layer 142, the second carrier transport layer 132, and the second light-emitting pattern 23b are in contact with each other in sequence. It should be noted that the thickness of the second carrier injection layer 142 is not limited here. For example, with the first thickness as a reference, the thickness of the second carrier injection layer 142 can be less than the first thickness, or can be equal to the first thickness, or can be greater than the first thickness.

[0238] In some examples, the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material under light radiation. At this time, the second carrier injection material is a cross-linkable organic material. That is to say, by exposing the second carrier injection material in the area where the second light-emitting device 202 is located, the self-cross-linking of the second carrier injection material is achieved to form a second cross-linked carrier injection material. The solubility of the second carrier injection material in the sixth solvent is greater than the solubility of the second cross-linked carrier injection material in the sixth solvent. Then, development is performed, the second cross-linked carrier injection material is insoluble in the developer (for example, the sixth solvent), and the second carrier injection material is soluble in the developer. It is used to remove the second carrier injection material in the remaining areas outside the area where the second light-emitting device 202 is located, thereby forming a patterned second carrier injection layer 142.

[0239] In other examples, the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material and the sixth photosensitive material under light radiation. That is, by exposing the second carrier injection material and the sixth photosensitive material in the area where the second light-emitting device 202 is located, the cross-linking of the second carrier injection material and the sixth photosensitive material is achieved to form a second cross-linked carrier injection material. The solubility of the second carrier injection material and the sixth photosensitive material in the sixth solvent is greater than the solubility of the second cross-linked carrier injection material in the sixth solvent. Then, development is performed, the second cross-linked carrier injection material is insoluble in the developer (for example, the sixth solvent), and the second carrier injection material and the sixth photosensitive material are soluble in the developer. It is used to remove the second carrier injection material and the sixth photosensitive material in the remaining areas outside the area where the second light-emitting device 202 is located, thereby forming a patterned second carrier injection layer 142.

[0240] Exemplarily, the sixth solvent is a third type solvent, and the third type solvent includes at least one of water, ethanol, methanol, N,N-dimethylformamide, N-methylformamide and dithionyl chloride.

[0241] like Figure 6 As shown, when the second sacrificial layer group 13B includes the second carrier transport layer 132 and the second carrier injection layer 142 , the preparation method of at least one second light emitting device 202 , for example, includes N1 ′ to N3 ′.

[0242] N1′: a second initial carrier injection layer 142i, a second initial carrier transport layer 132i, and a second initial light emitting pattern 23bi are sequentially formed on the first electrode layer 21a and a side of at least one first light emitting device 201 away from the substrate 11.

[0243] For an exemplary introduction to the formation of the second initial carrier transport layer 132i and the second initial light-emitting pattern 23bi, please refer to the relevant content of the aforementioned N1 section, which will not be repeated here.

[0244] Exemplarily, the process for forming the second initial carrier injection layer 142i is any one of spin coating, screen printing, doctor blade coating and drop coating, and the process solution is the sixth solution, wherein the solvent of the sixth solution is the sixth solvent, and the solute of the sixth solution is the material for forming the second initial carrier injection layer 142i. It should be noted that, in the case where the second cross-linked carrier injection material is formed by self-cross-linking of the second carrier injection material, the material for forming the second initial carrier injection layer 142i is the second carrier injection material. Alternatively, in the case where the second cross-linked carrier injection material is formed by cross-linking the second carrier injection material and the sixth photosensitive material, the materials for forming the second initial carrier injection layer 142i are the second carrier injection material and the sixth photosensitive material.

[0245] For example, Figure 6 As shown, when the first initial residual pattern 330 remains on the side of the first electrode layer 21 a away from the substrate 11 , the second initial carrier injection layer 142 i located on one side of the first electrode layer 21 a is formed on the surface of the first initial residual pattern 330 .

[0246] For example, Figure 6 As shown, when a first initial residual pattern 330 remains on a side of the pixel defining layer 12 away from the substrate 11 , a second initial carrier injection layer 142 i located on one side of the pixel defining layer 12 is formed on a surface of the first initial residual pattern 330 .

[0247] N2': The stacked second initial carrier injection layer 142i, the second initial carrier transport layer 132i, and the second initial light-emitting pattern 23bi are exposed to light, so that the material of the exposed portion of the second initial carrier injection layer 142i is converted into the second cross-linked carrier injection material, the material of the exposed portion of the second initial carrier transport layer 132i is converted into the second cross-linked carrier transport material, and the material of the exposed portion of the second initial light-emitting pattern 23bi is converted into the second cross-linked light-emitting material.

[0248] It can be understood that the above-mentioned exposed area is the area corresponding to the at least one second light-emitting device 202. This step can change the solubility of the material of the second initial carrier injection layer 142i, the second initial carrier transport layer 132i and the second initial light-emitting pattern 23bi in the area where the at least one second light-emitting device 202 is located by exposing the second initial carrier injection layer 142i, the second initial carrier transport layer 132i and the second initial light-emitting pattern 23bi.

[0249] That is, at this time, the portion of the second initial carrier injection layer 142i located in the area where the second light-emitting device 202 is located is transformed into the second cross-linked carrier injection material, and the material of the portion of the second initial carrier injection layer 142i located in the remaining area except the area where the second light-emitting device 202 is located remains unchanged, and is still the material forming the second initial carrier injection layer 142i. The second cross-linked carrier injection material is insoluble in the developer (the sixth solvent), and the material forming the second initial carrier injection layer 142i is soluble in the developer (the sixth solvent). For an exemplary introduction to the second initial carrier transport layer 132i and the second initial light-emitting pattern 23bi during the exposure process, refer to the relevant content of the aforementioned N2 section, which will not be repeated here.

[0250] N3 ′: developing the stacked second initial carrier injection layer 142 i , the second initial carrier transport layer 132 i , and the second initial light emitting pattern 23 bi to form a stacked second carrier injection layer 142 , the second carrier transport layer 132 , and the second light emitting pattern 23 b .

[0251] Exemplarily, N3' may include the following three steps of development:

[0252] A developing solution (a fourth solvent) is used to remove the portion of the second initial light-emitting pattern 23bi located in the remaining areas of the multiple light-emitting devices 20 except the area where the second light-emitting device 202 is located (the material forming the second initial light-emitting pattern 23bi will remain near the substrate 11 to form a fourth temporary residual layer), while the portion of the second initial light-emitting pattern 23bi located in the area where the second light-emitting device 202 is located is retained, thereby obtaining at least one second light-emitting pattern 23b.

[0253] The developer (fifth solvent) is used to remove the second initial carrier transport layer 132i located in the remaining areas of the plurality of light-emitting devices 20 except the area where the second light-emitting device 202 is located (the material forming the second initial carrier transport layer 132i will remain near the substrate 11, forming a fifth temporary residual layer), and at the same time, the fourth temporary residual layer located in the remaining areas of the plurality of light-emitting devices 20 except the area where the second light-emitting device 202 is located on the second initial carrier transport layer 132i is also removed to avoid the material forming the second initial light-emitting pattern 23bi from remaining in the remaining areas of the plurality of light-emitting devices 20 except the area where the second light-emitting device 202 is located. The portion of the second initial carrier transport layer 132i located in the area where the second light-emitting device 202 is located is retained, thereby obtaining the second carrier transport layer 132 of at least one second light-emitting device 202.

[0254] The developer (sixth solvent) is used to remove the second initial carrier injection layer 142i located in the remaining areas of the plurality of light-emitting devices 20 except the area where the second light-emitting device 202 is located (the material forming the second initial carrier injection layer 142i may remain near the substrate 11, for example Figure 6 The second initial residual pattern 360b shown in FIG. 3 is shown in FIG. 3 , and the introduction of the second initial residual pattern 360b is described in the subsequent content, which will not be described in detail here. Meanwhile, the fifth temporary residual layer of the second carrier transport layer 132 located in the remaining areas of the plurality of light-emitting devices 20 except the area where the second light-emitting device 202 is located is also removed, thereby avoiding the residue of the material forming the second carrier transport layer 132 in the remaining areas of the plurality of light-emitting devices 20 except the area where the second light-emitting device 202 is located. The portion of the second initial carrier injection layer 142i located in the area where the second light-emitting device 202 is located is retained, thereby obtaining the second carrier injection layer 142 of at least one second light-emitting device 202.

[0255] It should be noted that after the second light emitting pattern 23 b is formed, a second initial residual pattern 360 b also exists on the side of the pixel defining layer 12 away from the substrate 11 .

[0256] Compared with the patterning of quantum dot luminescent materials by direct photolithography in the related art, by using a material that can undergo a cross-linking reaction under light irradiation as the material of the second sacrificial layer group 13B (i.e., the second carrier transport layer 132 and the second carrier injection layer 142), on the one hand, the second sacrificial layer group 13B can be used as a double sacrificial layer to remove the second quantum dot material located in the remaining area except the area where the second light-emitting device 202 is located, thereby avoiding the second quantum dot material from forming residues in the remaining area except the area where the second light-emitting device 202 is located. In this way, firstly, the problem of color mixing caused by the residue of the previous color quantum dot luminescent material (such as the second quantum dot luminescent material) on the side of the next color luminescent pattern (such as the third luminescent pattern 23c) close to the substrate 11 can be solved in the related art; secondly, the problem of color mixing caused by the residue of the next color quantum dot luminescent material (such as the second quantum dot luminescent material) on the side of the previous color luminescent pattern (such as the first luminescent pattern 23a) far from the substrate 11 can be solved in the related art. On the other hand, since the fifth temporary residual layer is a part of the second initial carrier transport layer 132i, and the second initial carrier transport layer 132i is a film layer in contact with the second initial light-emitting pattern 23bi, the step of developing with a developer (sixth solvent) can avoid the fifth temporary residual layer from remaining in the areas other than the area where the second light-emitting device 202 is located in the plurality of light-emitting devices 20, and in particular, can avoid the fifth temporary residual layer from remaining in the areas where the other light-emitting devices except the second light-emitting device 202 are located in the plurality of light-emitting devices 20. In this way, the problem of color mixing can be further solved, the problem of impure light-emitting spectrum can be avoided, and the device performance can be effectively improved.

[0257] The above is an exemplary introduction to the case where the plurality of light emitting devices 20 include at least one second light emitting device 202. The following is an exemplary introduction to the case where the plurality of light emitting devices 20 include at least one third light emitting device 203.

[0258] In some embodiments, Figure 3A to Figure 3B As shown, the multiple light-emitting devices 20 also include: at least one third light-emitting device 203, each third light-emitting device 203 in the at least one third light-emitting device 203 includes: a third light-emitting pattern 23c, and a third sacrificial layer group 13C arranged between the substrate 11 and the third light-emitting pattern 23c, the third sacrificial layer group 13C includes a third carrier transport layer 133; wherein the material of the third light-emitting pattern 23c includes: a third cross-linked light-emitting material; the material of the third carrier transport layer 133 includes: a third cross-linked carrier transport material.

[0259] For example, Figure 3AAs shown, the third sacrificial layer group 13C is a third carrier transport layer 133, and the third carrier transport layer 133 is in contact with the third light-emitting pattern 23c. It should be noted that there is no limitation on the thickness of the third carrier transport layer 133. For example, with the first thickness as a reference, the thickness of the third carrier transport layer 133 may be less than the first thickness, or may be equal to the first thickness, or may be greater than the first thickness.

[0260] Exemplarily, the third light-emitting device 203 may be a light-emitting device that emits blue light, and the third quantum dot material may be a blue quantum dot light-emitting material.

[0261] In some examples, the third cross-linked luminescent material is generated by cross-linking the third quantum dot material under light radiation, and at this time, the third quantum dot material is a cross-linkable organic material. For example, the third quantum dot material includes a third quantum dot body and a ligand material, wherein the ligand material is a cross-linkable organic material. That is to say, by exposing the third quantum dot material in the area where the third light-emitting device 203 is located, the self-cross-linking of the third quantum dot material is achieved to form a third cross-linked luminescent material. The solubility of the third quantum dot material in the seventh solvent is greater than the solubility of the third cross-linked luminescent material in the seventh solvent. Then, development is performed, the third cross-linked luminescent material is insoluble in the developer (for example, the seventh solvent), and the third quantum dot material is soluble in the developer. It is used to remove the third quantum dot material in the remaining areas outside the area where the third light-emitting device 203 is located, thereby forming a patterned third luminescent pattern 23c.

[0262] In other examples, the third cross-linked luminescent material is generated by cross-linking the third quantum dot material and the seventh photosensitive material under light radiation, that is, by exposing the third quantum dot material and the seventh photosensitive material in the area where the third light-emitting device 203 is located, the third quantum dot material and the seventh photosensitive material are cross-linked to form the third cross-linked luminescent material. The solubility of the third quantum dot material and the seventh photosensitive material in the seventh solvent is greater than the solubility of the third cross-linked luminescent material in the seventh solvent. Then, development is performed, the third cross-linked luminescent material is insoluble in the developer (for example, the seventh solvent), and the third quantum dot material and the third photosensitive material are soluble in the developer. It is used to remove the third quantum dot material and the seventh photosensitive material in the remaining areas other than the area where the third light-emitting device 203 is located, thereby forming a patterned third luminescent pattern 23c.

[0263] Exemplarily, the seventh solvent is a first type solvent, and the first type solvent includes at least one of octane and propylene glycol methyl ether acetate (PMA).

[0264] In some examples, the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation. At this time, the third carrier transport material is a cross-linkable organic material. That is, by exposing the third carrier transport material in the area where the third light-emitting device 203 is located, the self-crosslinking of the third carrier transport material is achieved to form a third cross-linked carrier transport material. The solubility of the third carrier transport material in the eighth solvent is greater than the solubility of the third cross-linked carrier transport material in the eighth solvent. Then, development is performed, the third cross-linked carrier transport material is insoluble in the developer (for example, the eighth solvent), and the third carrier transport material is soluble in the developer. It is used to remove the third carrier transport material in the remaining areas outside the area where the third light-emitting device 203 is located, thereby forming a patterned third carrier transport layer 133.

[0265] In other examples, the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation. That is, by exposing the third carrier transport material and the eighth photosensitive material in the area where the third light-emitting device 203 is located, the cross-linking of the third carrier transport material and the eighth photosensitive material is achieved to form a third cross-linked carrier transport material. The solubility of the third carrier transport material and the eighth photosensitive material in the eighth solvent is greater than the solubility of the third cross-linked carrier transport material in the eighth solvent. Then, development is performed, the third cross-linked carrier transport material is insoluble in the developer (for example, the eighth solvent), and the third carrier transport material and the eighth photosensitive material are soluble in the developer. It is used to remove the third carrier transport material and the eighth photosensitive material in the remaining areas outside the area where the third light-emitting device 203 is located, thereby forming a patterned third carrier transport layer 133.

[0266] Exemplarily, the eighth solvent is a second type solvent, and the second type solvent includes at least one of toluene, chlorobenzene or dichlorotoluene.

[0267] The following is an exemplary introduction to a method for preparing at least one third light emitting device 203. Figure 7 As shown, including H1~H3.

[0268] H1: A third initial carrier transport layer 133i and a third initial light emitting pattern 23ci are sequentially formed on a side of the first electrode layer 21a, at least one first light emitting device 201 and at least one second light emitting device 202 away from the substrate 11.

[0269] Exemplarily, the process for forming the third initial carrier transport layer 133i is any one of spin coating, screen printing, doctor blade coating and drop coating, and the process solution is the eighth solution, wherein the solvent of the eighth solution is the eighth solvent, and the solute of the eighth solution is the material for forming the third initial carrier transport layer 133i. It should be noted that, in the case where the third cross-linked carrier transport material is formed by self-cross-linking of the third carrier transport material, the material for forming the third initial carrier transport layer 133i is the third carrier transport material. Alternatively, in the case where the third cross-linked carrier transport material is formed by cross-linking the third carrier transport material and the eighth photosensitive material, the material for forming the third initial carrier transport layer 133i is the third carrier transport material and the eighth photosensitive material.

[0270] Exemplarily, the process for forming the third initial light-emitting pattern 23ci is any one of spin coating, screen printing, doctor blade coating and drop coating, and the process solution is the seventh solution, wherein the solvent of the seventh solution is the seventh solvent, and the solute of the seventh solution is the material for forming the third initial light-emitting pattern 23ci. It should be noted that, in the case where the third cross-linked light-emitting material is formed by self-cross-linking of the third quantum dot material, the material for forming the third initial light-emitting pattern 23ci is the third quantum dot material. Alternatively, in the case where the third cross-linked light-emitting material is formed by cross-linking the third quantum dot material and the seventh photosensitive material, the materials for forming the third initial light-emitting pattern 23ci are the third quantum dot material and the seventh photosensitive material.

[0271] For example, Figure 7 As shown, when a second initial residual pattern 350a remains on the side of the first electrode layer 21a and at least one first light-emitting device 201 away from the substrate 11, a third initial carrier transport layer 133i located on the side of the first electrode layer 21a and at least one first light-emitting device 201 is formed on the surface of the second initial residual pattern 350a.

[0272] For example, Figure 7 As shown, when the second initial residual pattern 350a remains on the side of the pixel defining layer 12 away from the substrate 11, the third initial carrier transport layer 133i located on one side of the pixel defining layer 12 is formed on the surface of the second initial residual pattern 350a.

[0273] H2: Expose the stacked third initial carrier transport layer 133i and the third initial light-emitting pattern 23ci to transform the material of the exposed portion of the third initial carrier transport layer 133i into the third cross-linked carrier transport material, and transform the material of the exposed portion of the third initial light-emitting pattern 23ci into the third cross-linked light-emitting material.

[0274] It can be understood that the exposed area is the area corresponding to the at least one third light-emitting device 203. This step can change the solubility of the material in the third initial carrier transport layer 133i and the third initial light-emitting pattern 23ci located in the area where the at least one third light-emitting device 203 is located by exposing the area where the at least one third light-emitting device 203 is located in the third initial carrier transport layer 133i and the third initial light-emitting pattern 23ci.

[0275] That is, at this time, the portion of the third initial carrier transport layer 133i located in the area where the third light-emitting device 203 is located is transformed into the third cross-linked carrier transport material, and the material of the portion of the third initial carrier transport layer 133i located in the remaining area except the area where the third light-emitting device 203 is located remains unchanged, and is still the material forming the third initial carrier transport layer 133i. The first cross-linked carrier transport material is insoluble in the developer (the eighth solvent), and the material forming the third initial carrier transport layer 133i is soluble in the developer (the eighth solvent).

[0276] The portion of the third initial light-emitting pattern 23ci located in the area where the third light-emitting device 203 is located is transformed into the third cross-linked light-emitting material, and the material of the portion of the third initial light-emitting pattern 23ci located in the remaining area except the area where the third light-emitting device 203 is located remains unchanged, and is still the material forming the third initial light-emitting pattern 23ci. The third cross-linked light-emitting material is insoluble in the developer (the seventh solvent), and the material forming the third initial light-emitting pattern 23ci is soluble in the developer (the seventh solvent).

[0277] It should be noted that if Figure 7 As shown, a third initial carrier transport layer 133i and a third initial light emitting pattern 23ci are also formed on the side of the pixel defining layer 12 away from the substrate 11. Figure 7 It is shown in the figure that the thickness of the third initial carrier transport layer 133i and the third initial light-emitting pattern 23ci on the side of the pixel defining layer 12 away from the substrate 11 is inconsistent with the thickness of the third initial carrier transport layer 133i and the third initial light-emitting pattern 23ci in the opening Q of the pixel defining layer 12. However, this is only to indicate that the third initial carrier transport layer 133i and the third initial light-emitting pattern 23ci exist on the side of the pixel defining layer 12 away from the substrate 11, and their thickness is not limited.

[0278] H3: The stacked third initial carrier transport layer 133i and the third initial light emitting pattern 23ci are developed to form a stacked third carrier transport layer 133 and a third light emitting pattern 23c.

[0279] Exemplarily, H3 may include the following two steps of development:

[0280] A developer (the seventh solvent) is used to remove the portion of the third initial light-emitting pattern 23ci located in the remaining areas of the multiple light-emitting devices 20 except the area where the third light-emitting device 203 is located (the material forming the third initial light-emitting pattern 23ci will remain near the substrate 11 to form a seventh temporary residual layer), while the portion of the third initial light-emitting pattern 23ci located in the area where the third light-emitting device 203 is located is retained, thereby obtaining at least one third light-emitting pattern 23c.

[0281] The developer (eighth solvent) is used to remove the third initial carrier transport layer 133i located in the remaining areas of the plurality of light-emitting devices 20 except the area where the third light-emitting device 203 is located (the material forming the third initial carrier transport layer 133i may remain near the substrate 11, for example Figure 7 The third initial residual pattern 380a shown in FIG. 3 is shown in FIG. 3 , and the third initial residual pattern 380a is described in the subsequent content, which will not be described in detail here. Meanwhile, the seventh temporary residual layer on the third initial carrier transport layer 133i located in the remaining areas of the plurality of light-emitting devices 20 except the area where the third light-emitting device 203 is located is also removed to avoid the material forming the third initial light-emitting pattern 23ci from remaining in the remaining areas of the plurality of light-emitting devices 20 except the area where the third light-emitting device 203 is located. The portion of the third initial carrier transport layer 133i located in the area where the third light-emitting device 203 is located is retained, thereby obtaining the third carrier transport layer 133 of at least one third light-emitting device 203.

[0282] It should be noted that after the third light emitting pattern 23 c is formed, a third initial residual pattern 380 a also exists on the side of the pixel defining layer 12 away from the substrate 11 .

[0283] Compared with the patterning of quantum dot luminescent materials by direct photolithography in the related art, by using a material that can undergo a cross-linking reaction under light irradiation as the material of the third sacrificial layer group 13C (i.e., the third carrier transport layer 133), the third sacrificial layer group 13C can be used as a sacrificial layer to remove the third quantum dot material located in the remaining area except the area where the third light-emitting device 203 is located, thereby avoiding the third quantum dot material from remaining in the remaining area except the area where the third light-emitting device 203 is located. In this way, the problem of color mixing caused by the quantum dot luminescent material of the next color (such as the third quantum dot luminescent material) remaining on the side of the luminescent pattern of the previous color (such as the first luminescent pattern 23a, the second luminescent pattern 23b) away from the substrate 11 can be solved.

[0284] In some embodiments, Figure 3BAs shown, when the third light-emitting device 203 includes a third light-emitting pattern 23c and a third sacrificial layer group 13C, and the third sacrificial layer group 13C includes a third carrier transport layer 133, the third sacrificial layer group 13C also includes: a third carrier injection layer 143; the third carrier injection layer 143 is located on the side of the third carrier transport layer 133 close to the substrate 11, and the material of the third carrier injection layer 143 includes: a third cross-linked carrier injection material.

[0285] For example, Figure 3B As shown, the third sacrificial layer group 13C is composed of a third carrier injection layer 143 and a third carrier injection layer 143, and the third carrier injection layer 143, the third carrier transport layer 133, and the third light-emitting pattern 23c are in contact with each other in sequence. It should be noted that the thickness of the third carrier injection layer 143 is not limited here. For example, with the first thickness as a reference, the thickness of the third carrier injection layer 143 can be less than the first thickness, or can be equal to the first thickness, or can be greater than the first thickness.

[0286] In some examples, the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation. At this time, the third carrier injection material is a cross-linkable organic material. That is to say, by exposing the third carrier injection material in the area where the third light-emitting device 203 is located, the self-cross-linking of the third carrier injection material is achieved to form a third cross-linked carrier injection material. The solubility of the third carrier injection material in the ninth solvent is greater than the solubility of the third cross-linked carrier injection material in the ninth solvent. Then, development is performed, the third cross-linked carrier injection material is insoluble in the developer (for example, the ninth solvent), and the third carrier injection material is soluble in the developer. It is used to remove the third carrier injection material in the remaining areas outside the area where the third light-emitting device 203 is located, thereby forming a patterned third carrier injection layer 143.

[0287] In other examples, the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material and the ninth photosensitive material under light radiation. That is, by exposing the third carrier injection material and the ninth photosensitive material in the area where the third light-emitting device 203 is located, the cross-linking of the third carrier injection material and the ninth photosensitive material is achieved to form a third cross-linked carrier injection material. The solubility of the third carrier injection material and the ninth photosensitive material in the ninth solvent is greater than the solubility of the third cross-linked carrier injection material in the ninth solvent. Then, development is performed, the third cross-linked carrier injection material is insoluble in the developer (for example, the ninth solvent), and the third carrier injection material and the ninth photosensitive material are soluble in the developer. It is used to remove the third carrier injection material and the ninth photosensitive material in the remaining areas outside the area where the third light-emitting device 203 is located, thereby forming a patterned third carrier injection layer 143.

[0288] Exemplarily, the ninth solvent is a third type solvent, and the third type solvent includes at least one of water, ethanol, methanol, H,H-dimethylformamide, H-methylformamide and dichlorothionyl.

[0289] like Figure 8 As shown, when the third sacrificial layer group 13C includes a third carrier transport layer 133 and a third carrier injection layer 143 , the preparation method of at least one third light emitting device 203 , for example, includes H1 ′ to H3 ′.

[0290] H1′: a third initial carrier injection layer 143i, a third initial carrier transport layer 133i, and a third initial light emitting pattern 23ci are sequentially formed on the side of the first electrode layer 21a, the at least one first light emitting device 201, and the at least one second light emitting device 202 away from the substrate 11.

[0291] For an exemplary introduction to forming the third initial carrier transport layer 133i and the third initial light-emitting pattern 23ci, please refer to the relevant content of the aforementioned section H1, which will not be repeated here.

[0292] Exemplarily, the process for forming the third initial carrier injection layer 143i is any one of spin coating, screen printing, doctor blade coating and drop coating, and the process solution is the ninth solution, wherein the solvent of the ninth solution is the ninth solvent, and the solute of the ninth solution is the material for forming the third initial carrier injection layer 143i. It should be noted that, in the case where the third cross-linked carrier injection material is formed by self-cross-linking of the third carrier injection material, the material for forming the third initial carrier injection layer 143i is the third carrier injection material. Alternatively, in the case where the third cross-linked carrier injection material is formed by cross-linking the third carrier injection material and the ninth photosensitive material, the materials for forming the third initial carrier injection layer 143i are the third carrier injection material and the ninth photosensitive material.

[0293] For example, Figure 8 As shown, when a second initial residual pattern 360b remains on the side of the first electrode layer 21a and at least one first light-emitting device 201 away from the substrate 11, a third initial carrier injection layer 143i located on the side of the first electrode layer 21a and at least one first light-emitting device 201 is formed on the surface of the second initial residual pattern 360b.

[0294] For example, Figure 8 As shown, when the second initial residual pattern 360b remains on the side of the pixel defining layer 12 away from the substrate 11, the third initial carrier injection layer 143i located on one side of the pixel defining layer 12 is formed on the surface of the second initial residual pattern 360b.

[0295] H2': The stacked third initial carrier injection layer 143i, the third initial carrier transport layer 133i, and the third initial light-emitting pattern 23ci are exposed to light, so that the material of the exposed portion of the third initial carrier injection layer 143i is converted into the third cross-linked carrier injection material, the material of the exposed portion of the third initial carrier transport layer 133i is converted into the third cross-linked carrier transport material, and the material of the exposed portion of the third initial light-emitting pattern 23ci is converted into the third cross-linked light-emitting material.

[0296] It can be understood that the above-mentioned exposed area is the area corresponding to at least one third light-emitting device 203. This step can change the solubility of the material of the third initial carrier injection layer 143i, the third initial carrier transport layer 133i and the third initial light-emitting pattern 23ci in the area where at least one third light-emitting device 203 is located by exposing the third initial carrier injection layer 143i, the third initial carrier transport layer 133i and the third initial light-emitting pattern 23ci in the area where at least one third light-emitting device 203 is located.

[0297] That is, at this time, the portion of the third initial carrier injection layer 143i located in the area where the third light-emitting device 203 is located is transformed into the third cross-linked carrier injection material, and the material of the portion of the third initial carrier injection layer 143i located in the remaining area except the area where the third light-emitting device 203 is located remains unchanged, and is still the material forming the third initial carrier injection layer 143i. The third cross-linked carrier injection material is insoluble in the developer (the ninth solvent), and the material forming the third initial carrier injection layer 143i is soluble in the developer (the ninth solvent). For an exemplary introduction to the third initial carrier transport layer 133i and the third initial light-emitting pattern 23ci during the exposure process, refer to the relevant content of the aforementioned H2 section, which will not be repeated here.

[0298] H3′: the stacked third initial carrier injection layer 143i, the third initial carrier transport layer 133i, and the third initial light emitting pattern 23ci are developed to form the stacked third carrier injection layer 143, the third carrier transport layer 133, and the third light emitting pattern 23c.

[0299] Exemplarily, H3' may include the following three steps of development:

[0300] A developer (the seventh solvent) is used to remove the portion of the third initial light-emitting pattern 23ci located in the remaining areas of the multiple light-emitting devices 20 except the area where the third light-emitting device 203 is located (the material forming the third initial light-emitting pattern 23ci will remain near the substrate 11 to form a seventh temporary residual layer), while the portion of the third initial light-emitting pattern 23ci located in the area where the third light-emitting device 203 is located is retained, thereby obtaining at least one third light-emitting pattern 23c.

[0301] The developer (eighth solvent) is used to remove the third initial carrier transport layer 133i located in the remaining areas of the plurality of light-emitting devices 20 except the area where the third light-emitting device 203 is located (the material forming the third initial carrier transport layer 133i will remain near the substrate 11, forming the eighth temporary residual layer), and at the same time, the seventh temporary residual layer located in the remaining areas of the plurality of light-emitting devices 20 except the area where the third light-emitting device 203 is located on the third initial carrier transport layer 133i is also removed to avoid the material forming the third initial light-emitting pattern 23ci remaining in the remaining areas of the plurality of light-emitting devices 20 except the area where the third light-emitting device 203 is located. The portion of the third initial carrier transport layer 133i located in the area where the third light-emitting device 203 is located is retained, thereby obtaining the third carrier transport layer 133 of at least one third light-emitting device 203.

[0302] The developer (ninth solvent) is used to remove the third initial carrier injection layer 143i located in the remaining areas of the plurality of light-emitting devices 20 except the area where the third light-emitting device 203 is located (the material forming the third initial carrier injection layer 143i may remain near the substrate 11, for example Figure 8 The third initial residual pattern 390b shown in FIG. 3 is shown in FIG. 3 , and the third initial residual pattern 390b is described in the subsequent content, which will not be described in detail here. Meanwhile, the eighth temporary residual layer of the third carrier transport layer 133 located in the remaining areas of the plurality of light-emitting devices 20 except the area where the third light-emitting device 203 is located is also removed, thereby avoiding the residue of the material forming the third carrier transport layer 133 in the remaining areas of the plurality of light-emitting devices 20 except the area where the third light-emitting device 203 is located. The portion of the third initial carrier injection layer 143i located in the area where the third light-emitting device 203 is located is retained, thereby obtaining the third carrier injection layer 143 of at least one third light-emitting device 203.

[0303] It should be noted that after the third light emitting pattern 23 c is formed, a third initial residual pattern 390 b also exists on the side of the pixel defining layer 12 away from the substrate 11 .

[0304] Compared with the patterning of quantum dot luminescent materials by direct photolithography in the related art, by using a material that can undergo a cross-linking reaction under light irradiation as the material of the third sacrificial layer group 13C (i.e., the third carrier transport layer 133 and the third carrier injection layer 143), on the one hand, the third sacrificial layer group 13C can be used as a double sacrificial layer to remove the third quantum dot material located in the remaining area except the area where the third light-emitting device 203 is located, thereby avoiding the third quantum dot material from forming residues in the remaining area except the area where the third light-emitting device 203 is located. In this way, the problem of color mixing caused by the next color of quantum dot luminescent material (such as the third quantum dot luminescent material) remaining on the side away from the substrate 11 of the previous color luminescent pattern (such as the first luminescent pattern 23a, the second luminescent pattern 23b) in the related art can be solved. On the other hand, since the eighth temporary residual layer is a part of the third initial carrier transport layer 133i, and the third initial carrier transport layer 133i is a film layer in contact with the third initial luminescent pattern 23ci. The above-mentioned step of developing with a developer (the ninth solvent) can avoid the eighth temporary residual layer from remaining in the remaining areas of the multiple light-emitting devices 20 except the area where the third light-emitting device 203 is located, especially can avoid the eighth temporary residual layer from remaining in the areas where other light-emitting devices except the third light-emitting device 203 are located among the multiple light-emitting devices 20. In this way, the problem of color mixing can be further solved, the problem of impure luminous spectrum can be avoided, and the device performance can be effectively improved.

[0305] In some embodiments, the first carrier transport layer 131, the second carrier transport layer 132, and the third carrier transport layer 133 are hole transport layers, and the first carrier injection layer 141, the second carrier injection layer 142, and the third carrier injection layer 143 are hole injection layers. In this case, the first electrode 21 is an anode, and the second electrode 22 is a cathode. The first light-emitting device 201 is a "upright" light-emitting device. In this case, the front film layer of the hole injection layer is the anode, and the anode prepared by magnetron sputtering has a high density and is insoluble in organic solvents. In this way, the tolerance of the "upright" light-emitting device to solvent immersion and development during the preparation process can be improved.

[0306] In other embodiments, the first carrier transport layer 131, the second carrier transport layer 132, and the third carrier transport layer 133 are electron transport layers, and the first carrier injection layer 141, the second carrier injection layer 142, and the third carrier injection layer 143 are electron injection layers. In this case, the first electrode 21 is a cathode and the second electrode 22 is an anode. The first light-emitting device 201 is an "inverted" light-emitting device.

[0307] In some embodiments, Figure 3A to Figure 3BAs shown, at least one first light emitting device 201 is configured to emit light of a first wavelength; illustratively, the light of the first wavelength is red light. Each of the at least one first light emitting device 201 further includes: a first pattern layer 71 and a second pattern layer 72, the first pattern layer 71 is disposed on a side of the first light emitting pattern 23a away from the substrate 11, the second pattern layer 72 is disposed on a side of the first pattern layer 71 away from the substrate 11, and the first light emitting pattern 23a, the first pattern layer 71 and the second pattern layer 72 are in contact with each other in sequence.

[0308] For example, Figure 5 As shown, when the second sacrificial layer group 13B is the second carrier transport layer 132, the first pattern layer 71 is the second initial residual pattern 350a formed by developing the second initial carrier transport layer 132i in the area where the first light emitting device 201 is located. Therefore, the material forming the first pattern layer 71 is the same as the material of the second initial residual pattern 350a. Figure 5 and Figure 7 As shown, since the portion of the second initial carrier transport layer 132i corresponding to the first pattern layer 71 is not exposed during the preparation of at least one second light-emitting device 202 and at least one third light-emitting device 203, the material of the first pattern layer 71 is also the same as that of the second initial carrier transport layer 132i.

[0309] That is, when the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material under light radiation, the material of the first pattern layer 71 includes: the second carrier transport material. When the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material and the fifth photosensitive material under light radiation, the material of the first pattern layer 71 includes: the second carrier transport material and the fifth photosensitive material.

[0310] After exposure and development, the second initial carrier transport layer 132i located in the area where the second light-emitting device 202 is located forms the second carrier transport layer 132 of the second light-emitting device 202; and the second initial carrier transport layer 132i located in the area where the first light-emitting device 201 is located is washed away during the development process to form a second initial residual pattern 350a. Therefore, the thickness d11 of the second initial residual pattern 350a is less than the thickness d12 of the second carrier transport layer 132. Therefore, the thickness of the first pattern layer 71 (which is equal to the thickness d11 of the second initial residual pattern 350a) is less than the thickness d12 of the second carrier transport layer 132.

[0311] For example, Figure 6As shown, when the second sacrificial layer group 13B is the second carrier transport layer 132 and the second carrier injection layer 142, the first pattern layer 71 is the second initial residual pattern 360b formed after the second initial carrier injection layer 142i is developed in the area where the first light emitting device 201 is located. Therefore, the material forming the first pattern layer 71 is the same as the material of the second initial residual pattern 360b. Figure 6 and Figure 8 As shown, since the portion of the second initial carrier injection layer 142i corresponding to the first pattern layer 71 is not exposed during the preparation of at least one second light-emitting device 202 and at least one third light-emitting device 203, the material of the first pattern layer 71 is also the same as that of the second initial carrier injection layer 142i.

[0312] That is, when the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material under light radiation, the material of the first pattern layer 71 includes: the second carrier injection material. When the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material and the sixth photosensitive material under light radiation, the material of the first pattern layer 71 includes: the second carrier injection material and the sixth photosensitive material.

[0313] After the second initial carrier injection layer 142i located in the area where the second light-emitting device 202 is located is exposed and developed, the second carrier injection layer 142 of the second light-emitting device 202 is formed; and the second initial carrier injection layer 142i located in the area where the first light-emitting device 201 is located is washed away during the development process to form a second initial residual pattern 360b. Therefore, the thickness d13 of the second initial residual pattern 360b is less than the thickness d14 of the second carrier injection layer 142. Therefore, the thickness of the first pattern layer 71 (which is equal to the thickness d13 of the second initial residual pattern 360b) is less than the thickness d14 of the second carrier injection layer 142.

[0314] For example, Figure 7 As shown, when the third sacrificial layer group 13C is the third carrier transport layer 133, the second pattern layer 72 is the third initial residual pattern 380a formed after the third initial carrier transport layer 133i is developed in the area where the first light emitting device 201 is located. Therefore, the material forming the second pattern layer 72 is the same as the material of the third initial residual pattern 380a. Figure 7 As shown, since the portion of the third initial carrier transport layer 133i corresponding to the third initial residual pattern 380a is not exposed during the preparation of at least one third light-emitting device 203, the material of the second pattern layer 72 is also the same as that of the third initial carrier transport layer 133i.

[0315] That is, when the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation, the material of the second pattern layer 72 includes: the third carrier transport material. When the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation, the material of the second pattern layer 72 includes: the third carrier transport material and the eighth photosensitive material.

[0316] After exposure and development, the third initial carrier transport layer 133i located in the area where the third light-emitting device 203 is located forms the third carrier transport layer 133 of the third light-emitting device 203; and the third initial carrier transport layer 133i located in the area where the first light-emitting device 201 is located is washed away during the development process to form a third initial residual pattern 380a. Therefore, the thickness d21 of the third initial residual pattern 380a is less than the thickness d22 of the third carrier transport layer 133. Therefore, the thickness of the second pattern layer 72 (which is equal to the thickness d21 of the third initial residual pattern 380a) is less than the thickness d22 of the third carrier transport layer 133.

[0317] It should be noted that, when the second sacrificial layer group 13B is the second carrier transport layer 132, and the third sacrificial layer group 13C is the third carrier transport layer 133, if the second carrier transport material of the first pattern layer 71 and the third carrier transport material of the second pattern layer 72 are the same, and the fifth photosensitive material of the first pattern layer 71 and the eighth photosensitive material of the second pattern layer 72 are the same, then, in the area where the first light-emitting device 201 is located, the materials of the first pattern layer 71 and the second pattern layer 72 are the same, the first pattern layer 71 and the second pattern layer 72 can be regarded as one layer, and the thickness of the layer is (d11+d21).

[0318] It is understandable that if Figure 3A As shown, when the second carrier transport layer 132 and the third carrier transport layer 133 are hole transport layers, in the area where the first light-emitting device 201 is located, the first pattern layer 71 and the second pattern layer 72 can serve as electron blocking layers of the first light-emitting device 201, and are used to improve the electron injection of the first light-emitting device 201 and enhance the efficiency of the light-emitting device 20.

[0319] For example, Figure 8 As shown, when the third sacrificial layer group 13C is the third carrier transport layer 133 and the third carrier injection layer 143, the second pattern layer 72 is the third initial residual pattern 390b formed after the third initial carrier injection layer 143i is developed in the area where the first light emitting device 201 is located. Therefore, the material forming the second pattern layer 72 is the same as the material of the third initial residual pattern 390b. Figure 8As shown, since the portion of the third initial carrier injection layer 143i corresponding to the third initial residual pattern 390b is not exposed during the preparation of at least one third light-emitting device 203, the material of the second pattern layer 72 is also the same as that of the third initial carrier injection layer 143i.

[0320] That is, when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation, the material of the second pattern layer 72 includes: the third carrier injection material. When the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material and the ninth photosensitive material under light radiation, the material of the second pattern layer 72 includes: the third carrier injection material and the ninth photosensitive material.

[0321] After exposure and development, the third initial carrier injection layer 143i located in the area where the third light-emitting device 203 is located forms the third carrier injection layer 143 of the third light-emitting device 203; and the third initial carrier injection layer 143i located in the area where the first light-emitting device 201 is located is washed away during the development process to form a third initial residual pattern 390b. Therefore, the thickness d23 of the third initial residual pattern 390b is less than the thickness d24 of the third carrier injection layer 143. Therefore, the thickness of the second pattern layer 72 (which is equal to the thickness d23 of the third initial residual pattern 390b) is less than the thickness d24 of the third carrier injection layer 143.

[0322] It should be noted that, when the second sacrificial layer group 13B is the second carrier transport layer 132 and the second carrier injection layer 142, and the third sacrificial layer group 13C is the third carrier transport layer 133 and the third carrier injection layer 143, if the second carrier injection material of the first pattern layer 71 and the third carrier injection material of the second pattern layer 72 are the same, and the sixth photosensitive material of the first pattern layer 71 and the ninth photosensitive material of the second pattern layer 72 are the same, then, in the area where the first light-emitting device 201 is located, the materials of the first pattern layer 71 and the second pattern layer 72 are the same, the first pattern layer 71 and the second pattern layer 72 can be regarded as one layer, and the thickness of the layer is (d13+d23).

[0323] It is understandable that if Figure 3B As shown, when the second carrier injection layer 142 and the third carrier injection layer 143 are hole injection layers, in the area where the first light-emitting device 201 is located, the first pattern layer 71 and the second pattern layer 72 can serve as electron blocking layers of the first light-emitting device 201, and are used to improve the electron injection of the first light-emitting device 201 and enhance the efficiency of the light-emitting device 20.

[0324] Exemplarily, since the difference between the HOMO (Highest Occupied Molecular Orbital) energy level of the red quantum dot light-emitting material, the green quantum dot light-emitting material, and the blue quantum dot light-emitting material and the HOMO energy level of the carrier transport material is getting larger and larger, the hole injection capability is expressed as: red light-emitting device R> green light-emitting device G> blue light-emitting device B, and the electron injection capability is expressed as red light-emitting device R=green light-emitting device G> blue light-emitting device B. The electron injection capability of the red light-emitting device R is greater than the hole injection capability of the red light-emitting device R. Therefore, when the at least one first light-emitting device 201 is configured to emit light of a first wavelength, and the light of the first wavelength is red light, such as Figure 3A to Figure 3B As shown, the first pattern layer 71 and the second pattern layer 72 remaining on the side of the first light-emitting device 201 away from the substrate 11 can effectively block the injection of electrons, so that the carrier (including: electrons and holes) transmission of the first light-emitting device 201 (red light-emitting device R) is more balanced, which is beneficial to improving the external quantum efficiency of the light-emitting device 20.

[0325] In some embodiments, Figure 3A to Figure 3B As shown, at least one second light emitting device 202 is configured to emit light of a second wavelength; illustratively, the light of the second wavelength is green light. At least one second light emitting device 202 further includes: a third pattern layer 73 and a fourth pattern layer 74, the third pattern layer 73 is disposed on a side of the second sacrificial layer group 13B close to the substrate 11, and the fourth pattern layer 74 is disposed on a side of the second light emitting pattern 23b away from the substrate 11, and the third pattern layer 73, the second sacrificial layer group 13B, the second light emitting pattern 23b and the fourth pattern layer 74 are in contact with each other in sequence.

[0326] For example, Figure 4 As shown, the third pattern layer 73 is a first initial residual pattern 330 formed by developing the first initial carrier injection layer 141i in the area where the second light emitting device 202 is located, and is formed after exposure (exposure of the second light emitting device 202). Therefore, the third pattern layer 73 and the first carrier injection layer 141 are made of the same material, which is the first cross-linked carrier injection material.

[0327] After exposure and development, the first initial carrier injection layer 141i located in the area where the first light-emitting device 201 is located forms the first carrier injection layer 141 of the first light-emitting device 201; and the first initial carrier injection layer 141i located in the area where the second light-emitting device 202 is located is washed away during the development process to form the first initial residual pattern 330. Therefore, the thickness d31 of the first initial residual pattern 330 is less than the thickness d32 of the first carrier injection layer 141. Therefore, the thickness of the third pattern layer 73 (which is equal to the thickness d31 of the first initial residual pattern 330) is less than the thickness d32 of the first carrier injection layer 141.

[0328] It is understandable that if Figure 3B As shown, in the area where the second light-emitting device 202 is located, since the third pattern layer 73 is the first initial residual pattern 330 formed after the first initial carrier injection layer 141i is developed, the third pattern layer 73 can serve as at least a part of the hole injection layer of the second light-emitting device 202, and is used to improve the hole injection of the second light-emitting device 202 and enhance the efficiency of the light-emitting device 20.

[0329] For example, Figure 7 As shown, when the third sacrificial layer group 13C is the third carrier transport layer 133, the fourth pattern layer 74 is the third initial residual pattern 380a formed by developing the third initial carrier transport layer 133i in the area where the second light emitting device 202 is located. Therefore, the material forming the fourth pattern layer 74 is the same as the material of the third initial residual pattern 380a. Figure 7 As shown, since the portion of the third initial carrier transport layer 133i corresponding to the third initial residual pattern 380a is not exposed during the preparation of at least one third light-emitting device 203, the fourth pattern layer 74 is also made of the same material as the third initial carrier transport layer 133i.

[0330] That is, when the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation, the material of the fourth pattern layer 74 includes: the third carrier transport material. When the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation, the material of the fourth pattern layer 74 includes: the third carrier transport material and the eighth photosensitive material.

[0331] After exposure and development, the third initial carrier transport layer 133i located in the area where the third light-emitting device 203 is located forms the third carrier transport layer 133 of the third light-emitting device 203; and the third initial carrier transport layer 133i located in the area where the second light-emitting device 202 is located is washed away during the development process to form a third initial residual pattern 380a. Therefore, the thickness d21 of the third initial residual pattern 380a is less than the thickness d22 of the third carrier transport layer 133. Therefore, the thickness of the fourth pattern layer 74 (which is equal to the thickness d21 of the third initial residual pattern 380a) is less than the thickness d22 of the third carrier transport layer 133.

[0332] It is understandable that if Figure 3A As shown, when the third carrier transport layer 133 is a hole transport layer, in the area where the second light-emitting device 202 is located, the fourth pattern layer 74 can serve as an electron blocking layer for the second light-emitting device 202 to improve the electron injection of the second light-emitting device 202 and enhance the efficiency of the light-emitting device 20.

[0333] For example, Figure 8 As shown, when the third sacrificial layer group 13C is the third carrier transport layer 133 and the third carrier transport layer 143, the fourth pattern layer 74 is the third initial residual pattern 390b formed by developing the third initial carrier injection layer 143i in the area where the second light emitting device 202 is located. Therefore, the material forming the fourth pattern layer 74 is the same as the material of the third initial residual pattern 390b. Figure 8 As shown, since the portion of the third initial carrier injection layer 143i corresponding to the third initial residual pattern 390b is not exposed during the preparation of at least one third light-emitting device 203, the fourth pattern layer 74 is also made of the same material as the third initial carrier injection layer 143i.

[0334] That is, when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation, the material of the fourth pattern layer 74 includes: the third carrier injection material. When the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material and the ninth photosensitive material under light radiation, the material of the fourth pattern layer 74 includes: the third carrier injection material and the ninth photosensitive material.

[0335] After exposure and development, the third initial carrier injection layer 143i located in the area where the third light-emitting device 203 is located forms the third carrier injection layer 143 of the third light-emitting device 203; and the third initial carrier injection layer 143i located in the area where the second light-emitting device 202 is located is washed away during the development process to form a third initial residual pattern 390b. Therefore, the thickness d23 of the third initial residual pattern 390b is less than the thickness d24 of the third carrier injection layer 143. Therefore, the thickness of the fourth pattern layer 74 (which is equal to the thickness d23 of the third initial residual pattern 390b) is less than the thickness d24 of the third carrier injection layer 143.

[0336] It is understandable that if Figure 3B As shown, when the third carrier injection layer 143 is a hole injection layer, in the area where the second light-emitting device 202 is located, the fourth pattern layer 74 can serve as an electron blocking layer for the second light-emitting device 202 to improve the electron injection of the second light-emitting device 202 and enhance the efficiency of the light-emitting device 20.

[0337] In some embodiments, Figure 3A to Figure 3B As shown, at least one third light emitting device 203 is configured to emit light of a third wavelength; illustratively, the light of the third wavelength is blue light. At least one third light emitting device 203 further includes: a fifth pattern layer 75 and a sixth pattern layer 76, the sixth pattern layer 76 is disposed on a side of the third sacrificial layer group 13C close to the substrate 11, the fifth pattern layer 75 is disposed on a side of the sixth pattern layer 76 close to the substrate, and the third sacrificial layer group 13C, the sixth pattern layer 76 and the fifth pattern layer 75 are in contact with each other in sequence.

[0338] For example, Figure 4 As shown, the fifth pattern layer 75 is formed by developing the first initial residual pattern 330 formed by the first initial carrier injection layer 141i in the area where the third light-emitting device 203 is located, and is formed after exposure (exposure of the third light-emitting device 203). Therefore, the fifth pattern layer 75 and the first carrier injection layer 141 are made of the same material, which is the first cross-linked carrier injection material.

[0339] After exposure and development, the first initial carrier injection layer 141i located in the area where the first light-emitting device 201 is located forms the first carrier injection layer 141 of the first light-emitting device 201; and the first initial carrier injection layer 141i located in the area where the third light-emitting device 203 is located is washed away during the development process to form the first initial residual pattern 330. Therefore, the thickness d31 of the first initial residual pattern 330 is less than the thickness d32 of the first carrier injection layer 141. Therefore, the thickness of the fifth pattern layer 75 (which is equal to the thickness d31 of the first initial residual pattern 330) is less than the thickness d32 of the first carrier injection layer 141.

[0340] For example, Figure 5 As shown, when the second sacrificial layer group 13B is the second carrier transport layer 132, the sixth pattern layer 76 is formed by the second initial residual pattern 350a formed by the second initial carrier transport layer 132i in the area where the third light-emitting device 203 is located after development, and is formed after exposure (exposure process of the third light-emitting device 203). Therefore, the sixth pattern layer 76 and the second carrier transport layer 132 are made of the same material, both of which are the second cross-linked carrier transport material.

[0341] After exposure and development, the second initial carrier transport layer 132i located in the area where the second light-emitting device 202 is located forms the second carrier transport layer 132 of the second light-emitting device 202; and the second initial carrier transport layer 132i located in the area where the third light-emitting device 203 is located is washed away during the development process to form a second initial residual pattern 350a. Therefore, the thickness d11 of the second initial residual pattern 350a is less than the thickness d12 of the second carrier transport layer 132. Therefore, the thickness of the sixth pattern layer 76 (which is equal to the thickness d11 of the second initial residual pattern 350a) is less than the thickness d12 of the second carrier transport layer 132.

[0342] For example, Figure 6 As shown, in the case where the second sacrificial layer group 13B is the second carrier transport layer 132 and the second carrier injection layer 142, the sixth pattern layer 76 is formed by the second initial residual pattern 360b formed by the second initial carrier injection layer 142i in the area where the third light-emitting device 203 is located after development, and is formed after exposure (exposure process of the third light-emitting device 203). Therefore, the sixth pattern layer 76 and the second carrier injection layer 142 are made of the same material, both of which are the second cross-linked carrier injection material.

[0343] After the second initial carrier injection layer 142i located in the area where the second light-emitting device 202 is located is exposed and developed, the second carrier injection layer 142 of the second light-emitting device 202 is formed; and the second initial carrier injection layer 142i located in the area where the third light-emitting device 203 is located is washed away during the development process to form a second initial residual pattern 360b. Therefore, the thickness d13 of the second initial residual pattern 360b is less than the thickness d14 of the second carrier injection layer 142. Therefore, the thickness of the sixth pattern layer 76 (which is equal to the thickness d13 of the second initial residual pattern 360b) is less than the thickness d14 of the second carrier injection layer 142.

[0344] It is understandable that if Figure 3BAs shown, in the area where the third light-emitting device 203 is located, when the material of the fifth pattern layer 75 is the first carrier injection material and the material of the sixth pattern layer 76 is the second carrier injection material, the fifth pattern layer 75 and the sixth pattern layer 76 can be used as part of the hole injection layer of the third light-emitting device 203 to improve the hole injection of the third light-emitting device 203 and enhance the efficiency of the light-emitting device 20.

[0345] In some embodiments, the light-emitting substrate 1 further includes a pixel defining layer 12, a plurality of openings Q are provided on the pixel defining layer 12, and a plurality of light-emitting devices 20 are provided in the plurality of openings Q in a one-to-one correspondence. A seventh pattern layer 81, an eighth pattern layer 82, and a ninth pattern layer 83 are provided on a side of the pixel defining layer 12 away from the substrate 11, and the seventh pattern layer 81, the eighth pattern layer 82, and the ninth pattern layer 83 are sequentially provided in a direction away from the substrate 11, and the seventh pattern layer 81, the eighth pattern layer 82, and the ninth pattern layer 83 are sequentially contacted.

[0346] For example, Figure 4 As shown, the seventh pattern layer 81 is the first initial residual pattern 330 formed after the first initial carrier injection layer 141i is developed in the area where the pixel defining layer 12 is located. Therefore, the material forming the seventh pattern layer 81 is the same as the material of the first initial residual pattern 330. Figures 5 to 8 As shown, since the portion of the first initial carrier injection layer 141i corresponding to the seventh pattern layer 81 is not exposed during the preparation of at least one second light-emitting device 202 and at least one third light-emitting device 203, the material of the seventh pattern layer 81 is also the same as that of the first initial carrier injection layer 141i.

[0347] That is, when the first cross-linked carrier injection material is generated by cross-linking the first carrier injection material under light radiation, the material of the seventh pattern layer 81 includes: the first carrier injection material. When the first cross-linked carrier injection material is generated by cross-linking the first carrier injection material and the third photosensitive material under light radiation, the material of the seventh pattern layer 81 includes: the first carrier injection material and the third photosensitive material.

[0348] After the first initial carrier injection layer 141i located in the area where the first light-emitting device 201 is located is exposed and developed, the first carrier injection layer 141 of the first light-emitting device 201 is formed; and the first initial carrier injection layer 141i located in the area where the pixel defining layer 12 is located is washed away during the development process to form the first initial residual pattern 330 (the seventh pattern layer 81). Therefore, the thickness d31 of the first initial residual pattern 330 is less than the thickness d32 of the first carrier injection layer 141. Therefore, the thickness of the seventh pattern layer 81 (which is equal to the thickness d13 of the second initial residual pattern 360b) is less than the thickness d32 of the first carrier injection layer 141.

[0349] For example, Figure 5 As shown in FIG. 1 , when the second sacrificial layer group 13B is the second carrier transport layer 132, the eighth pattern layer 82 is the second initial residual pattern 350a formed by developing the second initial carrier transport layer 132i in the area where the pixel defining layer 12 is located. Therefore, the material forming the eighth pattern layer 82 is the same as the material of the second initial residual pattern 350a. Figure 5 and Figure 7 As shown, since the portion of the second initial carrier transport layer 132i corresponding to the eighth pattern layer 82 is not exposed during the preparation of at least one second light-emitting device 202 and at least one third light-emitting device 203, the material of the eighth pattern layer 82 is also the same as that of the second initial carrier transport layer 132i.

[0350] That is, when the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material under light radiation, the material of the eighth pattern layer 82 includes: the second carrier transport material. When the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material and the fifth photosensitive material under light radiation, the material of the eighth pattern layer 82 includes: the second carrier transport material and the fifth photosensitive material.

[0351] After the second initial carrier transport layer 132i located in the area where the second light-emitting device 202 is located is exposed and developed, the second carrier transport layer 132 of the second light-emitting device 202 is formed; and the second initial carrier transport layer 132i located in the area where the pixel defining layer 12 is located is washed away during the development process to form a second initial residual pattern 350a (eighth pattern layer 82). Therefore, the thickness d11 of the second initial residual pattern 350a is less than the thickness d12 of the second carrier transport layer 132. Therefore, the thickness of the eighth pattern layer 82 (which is equal to the thickness d11 of the second initial residual pattern 350a) is less than the thickness d12 of the second carrier transport layer 132.

[0352] For example, Figure 6As shown, when the second sacrificial layer group 13B is the second carrier transport layer 132 and the second carrier injection layer 142, the eighth pattern layer 82 is the second initial residual pattern 360b formed by developing the second initial carrier injection layer 142i in the area where the pixel defining layer 12 is located. Therefore, the material forming the eighth pattern layer 82 is the same as the material of the second initial residual pattern 360b. Figure 6 and Figure 8 As shown, since the portion of the second initial carrier injection layer 142i corresponding to the eighth pattern layer 82 is not exposed during the preparation of at least one second light-emitting device 202 and at least one third light-emitting device 203, the material of the eighth pattern layer 82 is also the same as that of the second initial carrier injection layer 142i.

[0353] That is, when the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material under light radiation, the material of the eighth pattern layer 82 includes: the second carrier injection material. When the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material and the sixth photosensitive material under light radiation, the material of the eighth pattern layer 82 includes: the second carrier injection material and the sixth photosensitive material.

[0354] After the second initial carrier injection layer 142i located in the area where the second light-emitting device 202 is located is exposed and developed, the second carrier injection layer 142 of the second light-emitting device 202 is formed; and the second initial carrier injection layer 142i located in the area where the pixel defining layer 12 is located is washed away during the development process to form a second initial residual pattern 360b (eighth pattern layer 82). Therefore, the thickness d13 of the second initial residual pattern 360b is less than the thickness d14 of the second carrier injection layer 142. Therefore, the thickness of the eighth pattern layer 82 (which is equal to the thickness d13 of the second initial residual pattern 360b) is less than the thickness d14 of the second carrier injection layer 142.

[0355] For example, Figure 7 As shown, when the third sacrificial layer group 13C is the third carrier transport layer 133, the ninth pattern layer 83 is the third initial residual pattern 380a formed by developing the third initial carrier transport layer 133i in the area where the pixel defining layer 12 is located. Therefore, the material forming the ninth pattern layer 83 is the same as the material of the third initial residual pattern 380a. Figure 7 As shown, since the portion of the third initial carrier transport layer 133i corresponding to the third initial residual pattern 380a is not exposed during the preparation of at least one third light-emitting device 203, the ninth pattern layer 83 is also made of the same material as the third initial carrier transport layer 133i.

[0356] That is, when the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation, the material of the ninth pattern layer 83 includes: the third carrier transport material. When the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation, the material of the ninth pattern layer 83 includes: the third carrier transport material and the eighth photosensitive material.

[0357] After the third initial carrier transport layer 133i located in the area where the third light-emitting device 203 is located is exposed and developed, the third carrier transport layer 133 of the third light-emitting device 203 is formed; and the third initial carrier transport layer 133i located in the area where the pixel defining layer 12 is located is washed away during the development process to form a third initial residual pattern 380a (ninth pattern layer 83). Therefore, the thickness d21 of the third initial residual pattern 380a is less than the thickness d22 of the third carrier transport layer 133. Therefore, the thickness of the ninth pattern layer 83 (which is equal to the thickness d21 of the third initial residual pattern 380a) is less than the thickness d22 of the third carrier transport layer 133.

[0358] It should be noted that, when the second sacrificial layer group 13B is the second carrier transport layer 132, and the third sacrificial layer group 13C is the third carrier transport layer 133, if the second carrier transport material of the eighth pattern layer 82 is the same as the third carrier transport material of the ninth pattern layer 83, and the fifth photosensitive material of the eighth pattern layer 82 is the same as the eighth photosensitive material of the ninth pattern layer 83, then, in the area where the pixel defining layer 12 is located, the materials of the eighth pattern layer 82 and the ninth pattern layer 83 are the same, the eighth pattern layer 82 and the ninth pattern layer 83 can be regarded as one layer, and the thickness of the layer is (d11+d21).

[0359] For example, Figure 8 As shown, when the third sacrificial layer group 13C is the third carrier transport layer 133 and the third carrier transport layer 143, the ninth pattern layer 83 is the third initial residual pattern 390b formed by developing the third initial carrier injection layer 143i in the area where the pixel defining layer 12 is located. Therefore, the material forming the ninth pattern layer 83 is the same as the material of the third initial residual pattern 390b. Figure 8 As shown, since the portion of the third initial carrier injection layer 143i corresponding to the third initial residual pattern 390b is not exposed during the preparation of at least one third light-emitting device 203, the ninth pattern layer 83 is also made of the same material as the third initial carrier injection layer 143i.

[0360] That is, when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation, the material of the ninth pattern layer 83 includes: the third carrier injection material. When the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material and the ninth photosensitive material under light radiation, the material of the ninth pattern layer 83 includes: the third carrier injection material and the ninth photosensitive material.

[0361] After exposure and development, the third initial carrier injection layer 143i located in the area where the third light-emitting device 203 is located forms the third carrier injection layer 143 of the third light-emitting device 203; and the third initial carrier injection layer 143i located in the area where the pixel defining layer 12 is located is washed away during the development process to form the third initial residual pattern 390b (ninth pattern layer 83). Therefore, the thickness d23 of the third initial residual pattern 390b is less than the thickness d24 of the third carrier injection layer 143. Therefore, the thickness of the ninth pattern layer 83 (which is equal to the thickness d23 of the third initial residual pattern 390b) is less than the thickness d24 of the third carrier injection layer 143.

[0362] It should be noted that, when the second sacrificial layer group 13B is the second carrier transport layer 132 and the second carrier injection layer 142, and the third sacrificial layer group 13C is the third carrier transport layer 133 and the third carrier injection layer 143, if the first carrier injection material of the seventh pattern layer 81, the second carrier injection material of the eighth pattern layer 82 and the third carrier injection material of the ninth pattern layer 83 are the same, and the third photosensitive material of the seventh pattern layer 81, the sixth photosensitive material of the eighth pattern layer 82 and the ninth photosensitive material of the ninth pattern layer 83 are the same, then, in the area where the pixel defining layer 12 is located, the materials of the seventh pattern layer 81, the eighth pattern layer 82 and the ninth pattern layer 83 are the same, the seventh pattern layer 81, the eighth pattern layer 82 and the ninth pattern layer 83 can be regarded as one layer, and the thickness of the layer is (d13+d23+d31).

[0363] It should be noted that, in the first pattern layer 71, the second pattern layer 72, the third pattern layer 73, the fourth pattern layer 74, the fifth pattern layer 75, the sixth pattern layer 76, the seventh pattern layer 81, the eighth pattern layer 82 and the ninth pattern layer 83, not all pattern layers exist, and some pattern layers may exist. For example, the first initial carrier injection layer 141i is removed more cleanly after development, and there is no residue of the first initial residual pattern 330, then the third pattern layer 73, the fifth pattern layer 75 and the seventh pattern layer 81 will not exist.

[0364] The above is an exemplary introduction to the first light-emitting device 201, the second light-emitting device 202, the third light-emitting device 203, and the residual pattern layer in the pixel defining layer 12. The following is an exemplary introduction to the structure of the cross-linked material in the first light-emitting device 201, the second light-emitting device 202, and the third light-emitting device 203 and the structure of the photosensitive material that forms the cross-linked material.

[0365] In some embodiments, the first photosensitive material, the fourth photosensitive material and the seventh photosensitive material are the same or different, and are independently selected from any one of the first category of photosensitive materials; the first category of photosensitive materials includes: a first photosensitive group, the first photosensitive group undergoes a cross-linking reaction with a quantum dot material under light radiation; the quantum dot material is one of the first quantum dot material, the second quantum dot material and the third quantum dot material.

[0366] In some embodiments, any one of the first quantum dot material, the second quantum dot material, and the third quantum dot material includes: a quantum dot body and a first ligand material coordinated to the quantum dot body. The quantum dot body includes: II-VI group quantum dots, III-V group quantum dots, IV-VI group quantum dots, core-shell structure quantum dots, and ABX 3 Any of the ABX type perovskite quantum dots. 3 A is CH in perovskite quantum dots 3 NH 3 + (Methylamine), NH 2 CH=NH 2 (Formamidine) and Cs + One or more of, B is Pb 2+ and Sn 2+ One or two of the following, X is Cl - Br - and I - One or more of ABX 3 Type perovskite quantum dots include CH 3 NH 3 PbB 3 , CH 3 NH 3 PbCl 3 , CH 3 NH 3 PbI 3 、CsPbBr 3 、CsPbCl 3 and CsPbI 3 .

[0367] Exemplarily, the first ligand material coordinated to the quantum dot body is used to crosslink with the first type of photosensitive material (the first photosensitive material, the fourth photosensitive material and the seventh photosensitive material). The first ligand material contains a carbon-hydrogen insertion group ZH, which can undergo a carbon-hydrogen insertion reaction with the first type of photosensitive group under light radiation, as shown in the following formula, wherein T is an active intermediate free radical generated by the first type of photosensitive group under light radiation. In the carbon-hydrogen insertion group ZH, Z is any one of primary carbon, secondary carbon and tertiary carbon. Please refer to the subsequent content for details, which will not be described in detail here.

[0368] (T)+ZH→Z-(T)-H

[0369] Exemplarily, the II-VI group quantum dots are selected from: binary compounds such as one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgSe, HgTe and HgS; ternary compounds such as Hg x Cd 1-x Te, Hg x Cd 1-x S, Hg x Cd 1-x Se, Hg x Zn 1-x Te, Cd x Zn 1-x Se and Cd x Zn 1-x One or more of S, wherein 0<x<1, but not limited thereto.

[0370] The III-V quantum dots are selected from: InP, InAs, InSb, GaAs, GaP, GaN, GaSb, InN, AlP, AlN, AlAs, or a mixture thereof; but are not limited thereto.

[0371] The IV-VI group quantum dots are selected from: PbS, PbSe, PbTe, or a mixture thereof; but not limited thereto.

[0372] Core-shell quantum dots refer to those in which one material is the core material and the other is the shell material. For example, a quantum dot is CdS@ZnS, which means that the core material of the quantum dot is CdS and the shell material is ZnS. The core-shell quantum dots are selected from: CdS@ZnS, CdSe@CdS, InP@ZnS, CdTe@CdSe, CdSe@ZnTe, ZnTe@CdSe, ZnSe@CdS and Cd 1-x Zn x One or more of S@ZnS, wherein 0<x<1, but not limited thereto.

[0373] ABX 3 In the perovskite quantum dots, A is CH3 NH 3 + (Methylamine), NH 2 CH=NH 2 (Formamidine) and Cs + One or more of, B is Pb 2+ and Sn 2+ One or two of the following, X is one or more of Cl-, Br- and I-, ABX 3 Type perovskite quantum dots include CH 3 NH 3 PbB 3 , CH 3 NH 3 PbCl 3 , CH 3 NH 3 PbI 3 、CsPbBr 3 、CsPbCl 3 and CsPbI 3 , but not limited to this.

[0374] In some other embodiments, the quantum dot body may be other nanoscale materials, such as nanorods, nanosheets, etc. The components of other nanoscale materials may include CuInS 2 、CuInSe 2 、AgInS 2 At least one of the materials described above, but not limited thereto.

[0375] It should be noted that the above-listed structural formula is an example of the structure of the quantum dot body, and does not limit the structure of the quantum dot body. There is no limitation on the structure of the quantum dot body, as long as the requirement that the first ligand material is coordinated to the quantum dot body is met.

[0376] Exemplarily, the first ligand material can be an organic molecule containing a hydrocarbon chain. For example, the first ligand material can be selected from any one of organic acids, organic amines, organic phosphorus and organic thiols, including but not limited to oleic acid, oleylamine, dodecyl mercaptan, tetradecylphosphonic acid, tri-n-octylphosphine, hexadecyltrimethylammonium bromide and polyethylene glycol or polyvinylpyrrolidone.

[0377] Exemplarily, the first ligand material contains a CH bond, and the first ligand material is cross-linked with the first type of photosensitive material through a carbon-hydrogen (CH) insertion reaction. For convenience of representation, the first ligand material can be represented by the following formula:

[0378]

[0379] Among them, R 2 and R 3The same or different, each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight chain or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0380] R 1 Any one of the carboxyl group containing C1-C40 carbon chains, the amino group containing C1-C40 carbon chains and the thiol group containing C1-C40 carbon chains is selected; any one of the carboxyl group, the amino group and the thiol group is coordinated and connected with the quantum dot body.

[0381] It should be noted that a Cx carbon chain refers to a carbon chain containing a total of x carbon (C) atoms, and the same applies below.

[0382] Under light radiation, the CH bonds in the first ligand material can crosslink with the first type of photosensitive material (the first photosensitive material, the fourth photosensitive material and the seventh photosensitive material). The specific crosslinking reaction is described in the subsequent content and will not be described here.

[0383] In some embodiments, the first type of photosensitive material is selected from any one of the structures represented by the following general formula (IV-A).

[0384]

[0385] Wherein, the benzophenone group is the first photosensitive group.

[0386] L 1 Any one selected from a single bond, an ester bond, an ether bond and a thioether bond.

[0387] R 4 and R 5 The same or different, each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0388] a is selected from positive integers greater than or equal to 2.

[0389] It should be noted that a represents the number of corresponding groups. The value of a is a positive integer greater than or equal to 2, that is, a can be 2, 3 or 4, and integers greater than 4.

[0390] If R 5There are more C atoms in the photosensitive material, and the value of a can be larger, for example, a positive integer greater than 6. However, the larger the value of a is, the more difficult it is to synthesize and purify the first type of photosensitive material when preparing it. However, in theory, the larger the value of a is, the more reaction sites the first type of photosensitive material has. At the same time, too many reaction sites of the first type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of a can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0391] The first type of photosensitive material having a structure as shown in the general formula (IV-A) contains a benzophenone group. The first type of photosensitive material containing a benzophenone group can be cross-linked with the first ligand material coordinated to the quantum dot body. For example, under light radiation (hν), benzophenone is photolyzed to generate a triplet ketone intermediate, the structure of which is shown in the following formula, wherein C ● -O ● It will attack nearby CH bonds to produce cross-linking reactions.

[0392]

[0393] In some embodiments, the reaction principle of the first type of photosensitive material and the quantum dot material (including the first quantum dot material, the second quantum dot material and the third quantum dot material) is shown in the following formula: The active intermediate free radical C contained in the triplet ketone intermediate in the first type of photosensitive material ● -O ● (Carbon oxygen free radical) attacks the nearby CH bond, that is, the C ● -O ● The CH bond in the first ligand material coordinated to the quantum dot body (QD) is attacked, thereby opening the CH bond in the first ligand material.

[0394] After the CH bond in the first ligand material is opened, a carbon radical (C ● ) and hydrogen radicals (H ● ), oxygen free radicals (O ● ) will attack the hydrogen radical (H ● ) forms a hydrogen-oxygen bond (-OH), and the carbon radical (C ● ) will attack the carbon radical (C ● ) form carbon-carbon bonds, so that the first type of photosensitive material and the quantum dot material (including the first quantum dot material, the second quantum dot material and the third quantum dot material) are cross-linked to form a cross-linked luminescent material (including the first cross-linked luminescent material, the second cross-linked luminescent material and the third cross-linked luminescent material).

[0395]

[0396] Wherein, "X" represents a linking group connecting two benzophenone groups. The linking group includes, for example, R 5 and at least two L 1 .

[0397] In some embodiments, any one of the first cross-linked light-emitting material, the second cross-linked light-emitting material, and the third cross-linked light-emitting material includes any one of the structures represented by the following general formula (IA).

[0398]

[0399] Among them, R 1 'Selected from R 1 Any of the remaining structures obtained by removing one hydrogen atom from a carboxyl group, an amino group, and a thiol group.

[0400] It should be noted that regarding L 1 For a description of L 1 Description of R 1 For a description of R 1 Description of R 2 , R 3 and R 4 For a description of R 2 , R 3 and R 4 description, and R 2 , R 3 and R 4 Any two of them, the same or different. 5 For a description of R 5 QD represents any type of quantum dot entity, which includes: II-VI group quantum dots, III-V group quantum dots, IV-VI group quantum dots, core-shell structure quantum dots and ABX 3 For the description of the quantum dot body, refer to the above description of the quantum dot. For the description of a, refer to the above description of a. No further details will be given here.

[0401] Exemplarily, the value of a is 2, 3, 4, 5 or 6, etc., which is not limited here. By setting the value of a to be a positive integer greater than or equal to 2, each benzophenone group in the first type of photosensitive material can be connected to a first ligand material molecule, and therefore, the first type of photosensitive material molecule containing a number of benzophenone groups can realize the connection of a number of quantum dot material molecules (including the first quantum dot material, the second quantum dot material and the third quantum dot material) to form a cross-linked luminescent material (including the first cross-linked luminescent material, the second cross-linked luminescent material and the third cross-linked luminescent material).

[0402] In some examples, the first type of photosensitive material is selected from the following structural formula (ethyl-1,2-diylbis(3-benzoylbenzoate)).

[0403]

[0404] In some embodiments, the first type of photosensitive material is selected from any one of the structures shown in the following general formula (IV-B).

[0405]

[0406] Wherein, the azide group is the first photosensitive group.

[0407] R 6 Any one selected from a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0408] b is selected from a positive integer greater than or equal to 2.

[0409] It should be noted that b represents the number of corresponding groups. The value of b is a positive integer greater than or equal to 2, that is, b can be 2, 3 or 4, and integers greater than 4.

[0410] If R 6 There are more C atoms in the photosensitive material, and the value of b can be larger, such as a positive integer greater than 6. However, the larger the value of b, the more difficult it is to synthesize and purify the first type of photosensitive material when preparing it. However, in theory, the larger the value of b, the more reaction sites the first type of photosensitive material has. At the same time, too many reaction sites of the first type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of b can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0411] The first type of photosensitive material with a structure as shown in the general formula (IV-B) contains an azide group. The first type of photosensitive material containing an azide group can be cross-linked with the first ligand material coordinated to the quantum dot body. For example, under light radiation (hν), the azide group is photolyzed to generate an active intermediate free radical nitrogen carbene The nitrogen carbene will attack nearby CH bonds to produce a cross-linking reaction.

[0412] Exemplarily, under light irradiation, 3 ) undergoes a cross-linking reaction with the CH bond in the first ligand material, and the cross-linking reaction is shown in the following formula. Wherein, the value of b is 2, and the second type of photosensitive material contains two azide groups (-N 3 ), each azide group (-N 3) will generate a nitrogen carbene, each nitrogen carbene attacks a first ligand material molecule, and through the CH insertion reaction, the second type of photosensitive material and the quantum dot material are cross-linked to form a cross-linked luminescent material (including: a first cross-linked luminescent material, a second cross-linked luminescent material, and a third cross-linked luminescent material). The solubility of the first cross-linked luminescent material, the second cross-linked luminescent material, and the third cross-linked luminescent material in the first type of solvent is reduced, that is, the first cross-linked luminescent material, the second cross-linked luminescent material, and the third cross-linked luminescent material are insoluble in the developer (for example: the first solvent, the fourth solvent, or the seventh solvent) during development.

[0413]

[0414] In some embodiments, any one of the first cross-linked light-emitting material, the second cross-linked light-emitting material, and the third cross-linked light-emitting material includes any one of the structures represented by the following general formula (IB).

[0415]

[0416] It should be noted that regarding R 1 For a description of R 1 Description of R 1 ', see the above description of R 1 ' Description. About R 2 and R 3 For a description of R 2 and R 3 description, and R 2 and R 3 , the same or different. About R 6 For a description of R 6 QD represents any type of quantum dot entity, which includes: II-VI group quantum dots, III-V group quantum dots, IV-VI group quantum dots, core-shell structure quantum dots and ABX 3 Any of the types of perovskite quantum dots. For the description of the quantum dot body, see the above description of the quantum dot. For the description of b, see the above description of b. No further details will be given here.

[0417] Exemplarily, the value of b is 2, 3, 4, 5 or 6, etc., which is not limited here. By setting the value of b to be a positive integer greater than or equal to 2, each azide group in the first type of photosensitive material can be connected to a first ligand material molecule, and therefore, the first type of photosensitive material molecule containing b number of azide groups can realize the connection of b number of quantum dot material molecules (including the first quantum dot material, the second quantum dot material and the third quantum dot material) to form a cross-linked luminescent material (including the first cross-linked luminescent material, the second cross-linked luminescent material and the third cross-linked luminescent material).

[0418] In some examples, the first type of photosensitive material is selected from any one of the following structural formulas.

[0419]

[0420] (3E,5E)-3,5-bis(4-azido-2,3,5,6-tetrafluorobenzylidene)-1,1-dimethylpiperidin-one;

[0421]

[0422] Bis(4-azido-2,3,5,6-tetrafluorobenzoyl);

[0423]

[0424] Bis(4-azido-2,3,5,6-tetrafluorophenyl)-1,4-pentadien-one.

[0425] In some embodiments, the first type of photosensitive material is selected from any one of the structures shown in the following general formula (IV-C).

[0426]

[0427] Wherein, the diaziridine group is the first photosensitive group.

[0428] R 7 and R 8 The same or different, each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0429] c is selected from a positive integer greater than or equal to 2.

[0430] It should be noted that c represents the number of corresponding groups. The value of c is a positive integer greater than or equal to 2, that is, c can be 2, 3 or 4, and integers greater than 4.

[0431] If R 7 There are more C atoms in the photosensitive material, and the value of c can be larger, such as a positive integer greater than 6. However, the larger the value of c, the more difficult it is to synthesize and purify when preparing the first type of photosensitive material. However, in theory, the larger the value of c, the more reaction sites the first type of photosensitive material has. At the same time, too many reaction sites of the first type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of c can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0432] The first type of photosensitive material having a structure as shown in the general formula (IV-C) contains a diaziridine group. The first type of photosensitive material containing a diaziridine group can be cross-linked with the first ligand material coordinated to the quantum dot body. For example, under light radiation (hν), the diaziridine group is photolyzed to generate an active intermediate free radical carbene. The carbene will attack nearby CH bonds to cause cross-linking reactions.

[0433] Exemplarily, under light radiation, the first type of photosensitive material containing a diaziridine group undergoes a cross-linking reaction with the CH bond in the first ligand material, and the cross-linking reaction is shown in the following formula. Wherein, the value of c is 2, and the first type of photosensitive material contains 2 diaziridine groups, each of which will produce a carbene, and each carbene attacks a first ligand material molecule, and through the CH insertion reaction, the first type of photosensitive material and the quantum dot material are cross-linked to form a cross-linked luminescent material (including: a first cross-linked luminescent material, a second cross-linked luminescent material, and a third cross-linked luminescent material). The solubility of the first cross-linked luminescent material, the second cross-linked luminescent material, and the third cross-linked luminescent material in the first type of solvent is reduced, that is, the first cross-linked luminescent material, the second cross-linked luminescent material, and the third cross-linked luminescent material are insoluble in the developer (for example: the first solvent, the fourth solvent, or the seventh solvent) during development.

[0434]

[0435] In some embodiments, any one of the first cross-linked light-emitting material, the second cross-linked light-emitting material, and the third cross-linked light-emitting material includes any one of the structures represented by the following general formula (IC).

[0436]

[0437] It should be noted that regarding R 1 For a description of R 1 Description of R 1 ', see the above description of R 1 ' Description. About R 2 and R 3 For a description of R 2 and R 3 description, and R 2 and R 3 , the same or different. About R 8 For a description of R 8 Description of R 7 For a description of R 7 QD represents any type of quantum dot entity, which includes: II-VI group quantum dots, III-V group quantum dots, IV-VI group quantum dots, core-shell structure quantum dots and ABX3 For the description of the quantum dot body, see the above description of the quantum dot. For the description of c, see the above description of c. No further details will be given here.

[0438] Exemplarily, the value of c is 2, 3, 4, 5 or 6, etc., which is not limited here. By setting the value of c to a positive integer greater than or equal to 2, each azide group in the first type of photosensitive material can be connected to a first ligand material molecule, and therefore, the first type of photosensitive material molecule containing c azide groups can realize the connection of c quantum dot material (including the first quantum dot material, the second quantum dot material and the third quantum dot material) molecules to form a cross-linked luminescent material (including the first cross-linked luminescent material, the second cross-linked luminescent material and the third cross-linked luminescent material).

[0439] In some examples, the first type of photosensitive material is selected from the following structural formula (3,3'-((perfluorobutane-1,4-diyl)bis(4,1-phenylene))bis(3-(trifluoromethyl)-3H-diazoxide).

[0440]

[0441] In some examples, the reaction equation between the first type of photosensitive material and the carrier input material is shown in equation (X-5).

[0442]

[0443] In other examples, the reaction equation between the first type of photosensitive material and the carrier input material is shown in equation (X-6).

[0444]

[0445] In some other examples, the reaction equation between the first type of photosensitive material and the carrier input material is shown in equation (X-7).

[0446]

[0447] in, represents the first ligand material oleic acid, and its structure is shown in the following formula.

[0448]

[0449] It is understandable that, as described in the preparation method of the first light-emitting device 201, the second light-emitting device 202, and the third light-emitting device 203, the quantum dot material and the first type of photosensitive material are dissolved in the first solution, the fourth solution, or the seventh solution and then coated or printed. Among them, the solvents of the first solution, the fourth solution, and the seventh solution are the first solvent, the fourth solvent, and the seventh solvent, respectively, and the three solvents all belong to the first type of solvent. By setting the first photosensitive material to be selected from the general formula (IV-A), the general formula (IV-B), or the general formula (IV-C), the solubility of the first type of photosensitive material in the first type of solvent (for example, octane, propylene glycol methyl ether acetate) can be increased, which is beneficial to the preparation of the light-emitting pattern 23 (including the first light-emitting pattern 23a, the second light-emitting pattern 23b, and the third light-emitting pattern 23c).

[0450] The above is an exemplary introduction to the first type of photosensitive materials and cross-linked luminescent materials (first cross-linked luminescent materials, second cross-linked luminescent materials, and third cross-linked luminescent materials). The following is an exemplary introduction to the structures of the second type of photosensitive materials and cross-linked carrier transport materials (first cross-linked carrier transport materials, second cross-linked carrier transport materials, and third cross-linked carrier transport materials).

[0451] In some embodiments, the second photosensitive material, the fifth photosensitive material and the eighth photosensitive material are the same or different, and are independently selected from any one of the second type of photosensitive materials; the second type of photosensitive materials includes: a second photosensitive group, the second photosensitive group undergoes a cross-linking reaction with a carrier transport material under light radiation; the carrier transport material is one of the first carrier transport material, the second carrier transport material and the third carrier transport material. In addition, the first photosensitive group and the second photosensitive group can be the same or different.

[0452] In some embodiments, any one of the first carrier transport material, the second carrier transport material, and the third carrier transport material includes: a carbon-hydrogen insertion group ZH; the carbon-hydrogen insertion group ZH is configured to undergo a carbon-hydrogen insertion reaction with the second type of photosensitive group under light radiation, as shown in the following formula, wherein T is an active intermediate free radical generated by the second type of photosensitive group under light radiation. In the carbon-hydrogen insertion group ZH, Z is any one of primary carbon, secondary carbon, and tertiary carbon.

[0453] (T)+ZH→Z-(T)-H

[0454] Exemplarily, the first carrier transport material, the second carrier transport material and the third carrier transport material are hole transport materials, which are configured to increase the transmission rate of holes in the light-emitting device and effectively block electrons within the light-emitting pattern to achieve maximum recombination of carriers. At the same time, the energy barrier of holes in the injection process is reduced, the injection efficiency of holes is improved, and the brightness, efficiency and service life of the device are improved.

[0455] Exemplarily, the hole transport material may be a material containing a triphenylamine structural unit, such as poly[bis(4-phenyl)(4-butylphenyl)amine](poly-TPD) and poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-n-butyl)phenyl)-diphenylamine)](TFB). Alternatively, the hole transport material may be a material containing a spirobifluorene structural unit, such as 2,2',7,7'-tetrakis(diphenylamino)-9,9'-spirobifluorene. Alternatively, the hole transport material may be polyvinylcarbazole (PVK).

[0456] Exemplarily, the carrier transport material contains a CH bond. When the carrier transport material is cross-linked with the second type of photosensitive material through a carbon-hydrogen (CH) insertion reaction, for convenience of representation, the carrier transport material can be represented by the following formula:

[0457] HC-(X)

[0458] X represents the remaining structure of any one of the first carrier transport material, the second carrier transport material and the third carrier transport material after removing the CH bond; the CH bond is used to undergo a cross-linking reaction with the second photosensitive group of the second type of photosensitive material under light radiation.

[0459] Under light radiation, the CH bonds in the carrier transport material can crosslink with the second type of photosensitive material (the second photosensitive material, the fifth photosensitive material and the eighth photosensitive material). The specific crosslinking reaction is described in the subsequent content and will not be described in detail here.

[0460] In some embodiments, the second type of photosensitive material is selected from any one of the structures shown in the following general formula (VA).

[0461]

[0462] Wherein, the benzophenone group is the second photosensitive group.

[0463] L 2 Any one selected from a single bond, an ester bond, an ether bond and a thioether bond.

[0464] R 9 and R 10 The same or different, each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0465] d is selected from a positive integer greater than or equal to 2.

[0466] It should be noted that d represents the number of corresponding groups. The value of d is a positive integer greater than or equal to 2, that is, d can be 2, 3 or 4, and integers greater than 4.

[0467] If R 10 There are more C atoms in the photosensitive material, and the value of d can be larger, such as a positive integer greater than 6. However, the larger the value of d, the more difficult it is to synthesize and purify the second type of photosensitive material. However, in theory, the larger the value of d, the more reaction sites the second type of photosensitive material has. At the same time, too many reaction sites of the second type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of d can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0468] The second type of photosensitive material with the structure shown in the general formula (VA) contains a benzophenone group. The second type of photosensitive material containing a benzophenone group can be cross-linked with a carrier transport material. For example, under light radiation (hν), benzophenone is photolyzed to generate a triplet ketone intermediate (see the structure above), and C ● -O ● It will attack nearby CH bonds to produce cross-linking reactions.

[0469] In some embodiments, the reaction principle of the second type of photosensitive material and the carrier transport material (including the first carrier transport material, the second carrier transport material and the third carrier transport material) is shown in the following formula: The active intermediate free radical C contained in the triplicate ketone intermediate in the second type of photosensitive material ● -O ● (Carbon oxygen free radical) attacks the nearby CH bond, that is, the C ● -O ● Attack the CH bonds in the carrier transport material, thereby opening the CH bonds in the carrier transport material.

[0470] After the CH bonds in the carrier transport material are opened, carbon radicals (C ● ) and hydrogen radicals (H ● ), oxygen free radicals (O ● ) will attack the hydrogen radical (H ● ) forms a hydrogen-oxygen bond (-OH), and the carbon radical (C ● ) will attack the carbon radicals (C ● ) form carbon-carbon bonds, so that the second type of photosensitive material and the carrier transport material (including the first carrier transport material, the second carrier transport material and the third carrier transport material) are cross-linked to form a cross-linked carrier transport material (including the first cross-linked carrier transport material, the second cross-linked carrier transport material and the third cross-linked carrier transport material).

[0471]

[0472] Wherein, "Q" represents a linking group connecting two benzophenone groups. The linking group includes, for example, R 10 and at least two L 2 .

[0473] In some examples, any one of the first cross-linked carrier transport material, the second cross-linked carrier transport material, and the third cross-linked carrier transport material includes any one of the structures represented by the following general formula (II-A).

[0474]

[0475] It should be noted that regarding L 2 For a description of L 2 Description of R 9 For a description of R 9 Description of R 10 For a description of R 10 For the description of X, refer to the above description of X. For the description of d, refer to the above description of d. No further details will be given here.

[0476] Exemplarily, the value of d is 2, 3, 4, 5 or 6, etc., which is not limited here. By setting the value of d to be a positive integer greater than or equal to 2, each benzophenone group in the second type of photosensitive material can be connected to a carrier transport material molecule, so the second type of photosensitive material molecule containing d benzophenone groups can realize the connection of d number of carrier transport material (including the first carrier transport material, the second carrier transport material and the third carrier transport material) molecules to form a cross-linked carrier transport material (including the first cross-linked carrier transport material, the second cross-linked carrier transport material and the third carrier transport material).

[0477] In some examples, the second type of photosensitive material is selected from the following structural formula (ethyl-1,2-diylbis(3-benzoylbenzoate)).

[0478]

[0479] In some embodiments, the second type of photosensitive material is selected from any one of the structures shown in the following general formula (VB).

[0480]

[0481] Wherein, the azide group is the second photosensitive group.

[0482] R 11Any one selected from a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0483] e is selected from a positive integer greater than or equal to 2.

[0484] It should be noted that e represents the number of corresponding groups. The value of e is a positive integer greater than or equal to 2, that is, e can be 2, 3 or 4, and integers greater than 4.

[0485] If R 11 There are more C atoms in the photosensitive material, and the value of e can be larger, such as a positive integer greater than 6. However, the larger the value of e, the more difficult it is to synthesize and purify the second type of photosensitive material when preparing it. However, in theory, the larger the value of e, the more reaction sites the second type of photosensitive material has. At the same time, too many reaction sites of the second type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of e can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0486] The second type of photosensitive material with the structure shown in the general formula (VB) contains an azide group. The second type of photosensitive material containing an azide group can be cross-linked with a carrier transport material. For example, under light radiation (hν), the azide group is photolyzed to generate an active intermediate free radical nitrogen carbene The nitrogen carbene will attack nearby CH bonds to produce a cross-linking reaction.

[0487] Exemplarily, under light irradiation, 3 ) undergoes a cross-linking reaction with the CH bond in the carrier transport material. The cross-linking reaction is shown in the following formula. Wherein, the value of e is 2, and the second type of photosensitive material contains two azide groups (-N 3 ), each azide group (-N 3 ) will generate an active intermediate free radical nitrogen carbene, each nitrogen carbene attacks a carrier transport material molecule, and through the CH insertion reaction, the second type of photosensitive material and the carrier transport material are cross-linked to form a cross-linked carrier transport material (including: a first cross-linked carrier transport material, a second cross-linked carrier transport material, and a third cross-linked carrier transport material). The solubility of the first cross-linked carrier transport material, the second cross-linked carrier transport material, and the third cross-linked carrier transport material in the second type of solvent is reduced, that is, the first cross-linked carrier transport material, the second cross-linked carrier transport material, and the third cross-linked carrier transport material are insoluble in the developer (for example: the second solvent, the fifth solvent, or the eighth solvent) during development.

[0488]

[0489] In some examples, any one of the first cross-linked carrier transport material, the second cross-linked carrier transport material, and the third cross-linked carrier transport material includes any one of the structures represented by the following general formula (II-B).

[0490]

[0491] It should be noted that regarding R 11 For a description of R 11 For the description of X, refer to the above description of X. For the description of e, refer to the above description of e. No further details will be given here.

[0492] Exemplarily, the value of e is 2, 3, 4, 5 or 6, etc., which is not limited here. By setting the value of e to a positive integer greater than or equal to 2, each azide group in the second type of photosensitive material can be connected to a carrier transport material molecule, so the second type of photosensitive material molecule containing e number of azide groups can realize the connection of b number of carrier transport material (including the first carrier transport material, the second carrier transport material and the third carrier transport material) molecules to form a cross-linked carrier transport material (including the first carrier transport material, the second carrier transport material and the third carrier transport material).

[0493] In some examples, the second type of photosensitive material is selected from any one of the following structural formulas.

[0494]

[0495] (3E,5E)-3,5-bis(4-azido-2,3,5,6-tetrafluorobenzylidene)-1,1-dimethylpiperidin-one;

[0496]

[0497] Bis(4-azido-2,3,5,6-tetrafluorobenzoyl);

[0498]

[0499] Bis(4-azido-2,3,5,6-tetrafluorophenyl)-1,4-pentadien-one.

[0500] In some embodiments, the second type of photosensitive material is selected from any one of the structures represented by the following general formula (VC).

[0501]

[0502] Wherein, the diaziridine group is the second photosensitive group.

[0503] R 12 and R13 The same or different, each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight chain or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0504] f is selected from a positive integer greater than or equal to 2.

[0505] It should be noted that f represents the number of corresponding groups. The value of f is a positive integer greater than or equal to 2, that is, f can be 2, 3 or 4, and integers greater than 4.

[0506] If R 12 There are more C atoms in the photosensitive material, and the value of f can be larger, such as a positive integer greater than 6. However, the larger the value of f, the more difficult it is to synthesize and purify the second type of photosensitive material when preparing it. However, in theory, the larger the value of f, the more reaction sites the second type of photosensitive material has. At the same time, too many reaction sites of the second type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of f can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0507] The second type of photosensitive material having a structure as shown in the general formula (VC) contains a diaziridine group. The second type of photosensitive material containing a diaziridine group can be cross-linked with a carrier transport material. For example, under light radiation (hν), the diaziridine group is photolyzed to generate an active intermediate free radical carbene. The carbene will attack nearby CH bonds to cause cross-linking reactions.

[0508] Exemplarily, under light radiation, the second type of photosensitive material containing a diaziridine group undergoes a cross-linking reaction with the CH bond in the carrier transport material, and the cross-linking reaction is shown in the following formula. Wherein, the value of f is 2, the second type of photosensitive material contains 2 diaziridine groups, each diaziridine group will produce a carbene, each carbene attacks a carrier transport material molecule, and through the CH insertion reaction, the second type of photosensitive material and the carrier transport material are cross-linked to form a cross-linked carrier transport material (including: a first cross-linked carrier transport material, a second cross-linked carrier transport material, and a third cross-linked carrier transport material). The solubility of the first cross-linked carrier transport material, the second cross-linked carrier transport material, and the third cross-linked carrier transport material in the second type of solvent is reduced, that is, the first cross-linked carrier transport material, the second cross-linked carrier transport material, and the third cross-linked carrier transport material are insoluble in the developer (for example: the second solvent, the fifth solvent, or the eighth solvent) during development.

[0509]

[0510] In some examples, any one of the first cross-linked carrier transport material, the second cross-linked carrier transport material, and the third cross-linked carrier transport material includes any one of the structures represented by the following general formula (II-C).

[0511]

[0512] It should be noted that regarding R 12 For a description of R 12 Description of R 13 For a description of R 13 For the description of X, refer to the above description of X. For the description of f, refer to the above description of f. No further details will be given here.

[0513] Exemplarily, the value of f is 2, 3, 4, 5 or 6, etc., which is not limited here. By setting the value of f to a positive integer greater than or equal to 2, each diaziridine group in the second type of photosensitive material can be connected to a carrier transport material molecule. Therefore, the second type of photosensitive material molecules containing f number of diaziridine groups can realize the connection of b number of carrier transport material (including the first carrier transport material, the second carrier transport material and the third carrier transport material) molecules to form a cross-linked carrier transport material (including the first carrier transport material, the second carrier transport material and the third carrier transport material).

[0514] In some examples, the second type of photosensitive material is selected from the following structural formula (3,3'-((perfluorobutane-1,4-diyl)bis(4,1-phenylene))bis(3-(trifluoromethyl)-3H-diazoxide).

[0515]

[0516] In some examples, the reaction formula of the second type of photosensitive material and the carrier input material is shown in Formula (X-2).

[0517]

[0518] In other examples, the reaction equation between the second type of photosensitive material and the carrier input material is shown in equation (X-3).

[0519]

[0520] In some other examples, the reaction equation between the second type of photosensitive material and the carrier input material is shown in equation (X-4).

[0521]

[0522] in, represents the hole transport material TFB, and its structure is shown in the following formula.

[0523]

[0524] It is understandable that, as described in the preparation method of the first light-emitting device 201, the second light-emitting device 202, and the third light-emitting device 203, the carrier material transport material and the second type of photosensitive material are dissolved in the second solution, the fifth solution, or the eighth solution and then coated or printed. Among them, the solvents of the second solution, the fifth solution, or the eighth solution are the second solvent, the fifth solvent, and the eighth solvent, respectively, and all three solvents belong to the second type of solvent. By setting the second photosensitive material to be selected from the general formula (VA), the general formula (VB), or the general formula (VC), the solubility of the second type of photosensitive material in the second type of solvent (for example, toluene, chlorobenzene, and dichlorotoluene) can be increased, which is beneficial to the preparation of the carrier transport layer (including the first carrier transport layer 131, the second carrier transport layer 132, and the third carrier transport layer 133).

[0525] The above is an exemplary introduction to the second type of photosensitive materials and cross-linked carrier transport materials (first cross-linked carrier transport materials, second cross-linked carrier transport materials, and third cross-linked carrier transport materials). The following is an exemplary introduction to the structure of the third type of photosensitive materials and cross-linked carrier injection materials (first cross-linked carrier injection materials, second cross-linked carrier injection materials, and third cross-linked carrier injection materials).

[0526] In some embodiments, the third photosensitive material, the sixth photosensitive material and the ninth photosensitive material are the same or different, and are independently selected from any one of the third type of photosensitive materials; the third type of photosensitive materials includes: a third photosensitive group, the third photosensitive group undergoes a cross-linking reaction with a carrier injection material under light radiation; the carrier injection material is one of the first carrier injection material, the second carrier injection material and the third carrier injection material. In addition, any two of the first photosensitive group, the second photosensitive group and the third photosensitive group may be the same or different.

[0527] In some embodiments, any one of the first carrier injection material, the second carrier injection material, and the third carrier injection material includes: a carbon-hydrogen insertion group ZH; the carbon-hydrogen insertion group ZH is configured to undergo a carbon-hydrogen insertion reaction with the third type of photosensitive group under light radiation, as shown in the following formula, wherein T is an active intermediate free radical generated by the third type of photosensitive group under light radiation. In the carbon-hydrogen insertion group ZH, Z is any one of primary carbon, secondary carbon, and tertiary carbon.

[0528] (T)+ZH→Z-(T)-H

[0529] Exemplarily, the first carrier injection material, the second carrier injection material and the third carrier injection material are hole injection materials, which are configured to reduce the barrier of hole injection from the anode so that holes can be effectively injected from the anode into the QLED light-emitting device. The hole injection material is, for example, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonic acid).

[0530] Exemplarily, the carrier transport material contains a CH bond. When the carrier transport material is cross-linked with the third type of photosensitive material through a carbon-hydrogen (CH) insertion reaction, for convenience of representation, the carrier transport material can be represented by the following formula:

[0531] HC-(Y)

[0532] Y represents the remaining structure of any one of the first carrier injection material, the second carrier injection material and the third carrier injection material after removing the CH bond; the CH bond is used to undergo a cross-linking reaction with the third photosensitive group of the third type of photosensitive material under light radiation.

[0533] Under light radiation, the CH bonds in the carrier injection material can crosslink with the third type of photosensitive material (the third photosensitive material, the sixth photosensitive material and the ninth photosensitive material). The specific crosslinking reaction is described in the subsequent content and will not be described here.

[0534] In some embodiments, the third photosensitive group is a benzophenone group, and the third type of photosensitive material containing the benzophenone group can be cross-linked with the carrier injection material. For example, under light radiation (hν), benzophenone is photolyzed to generate a triplet ketone intermediate (see the structure above), and the C●-O● in the triplet ketone intermediate will attack the nearby CH bond to cause a cross-linking reaction.

[0535] In some embodiments, the reaction principle of the third type of photosensitive material and the carrier injection material (including the first carrier injection material, the second carrier injection material and the third carrier injection material) is shown in the following formula. The active intermediate free radical C contained in the triplicate ketone intermediate in the third type of photosensitive material ● -O ● (Carbon oxygen free radical) attacks the nearby CH bond, that is, the C ● -O ● Attack the CH bonds in the carrier injection material, thus opening the CH bonds in the carrier injection material.

[0536] After the carriers are injected into the material, the CH bonds are opened and carbon radicals (C ● ) and hydrogen radicals (H ● ), oxygen free radicals (O ● ) will attack the hydrogen radical (H● ) forms a hydrogen-oxygen bond (-OH), and the carbon free radical (C ● ) will attack the carbon radicals (C ● ) form carbon-carbon bonds, so that the third type of photosensitive material and the carrier injection material (including the first carrier injection material, the second carrier injection material and the third carrier injection material) are cross-linked to form a cross-linked carrier injection material (including the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material).

[0537]

[0538] Wherein, "Q" represents a connecting group connecting two benzophenone groups. It should be noted that the third type of photosensitive material and carrier injection material in the formula can be a non-ionic organic material or an ionic organic material (the ionic groups and charges are not shown in the formula), which is not limited here.

[0539] In some embodiments, R B For R 14 , and Q is R 15 and at least two L 3 At this time, the third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-A).

[0540]

[0541] Wherein, the benzophenone group is the third photosensitive group.

[0542] L 3 Any one selected from a single bond, an ester bond, an ether bond and a thioether bond.

[0543] R 14 and R 15 The same or different, each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight chain or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0544] [M] m- Any one selected from organic anions and inorganic anions; organic anions include benzenesulfonate ion, salicylate ion, 3-hydroxy-2-naphthoate ion; inorganic anions include chloride ion, sulfate ion, nitrate ion.

[0545] g is selected from a positive integer greater than or equal to 2.

[0546] m is selected from a positive integer greater than or equal to 1.

[0547] It should be noted that g represents the number of corresponding groups. The value of g is a positive integer greater than or equal to 2, that is, g can be 2, 3 or 4, and integers greater than 4.

[0548] If R 15 There are more C atoms in the photosensitive material, and the value of g can be larger, for example, a positive integer greater than 6. However, the larger the value of g, the more difficult it is to synthesize and purify the third type of photosensitive material. However, in theory, the larger the value of g, the more reaction sites the third type of photosensitive material has. At the same time, too many reaction sites of the third type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of g can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0549] In some embodiments, any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material, and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-A).

[0550]

[0551] It should be noted that regarding R 14 For a description of R 14 Description of R 15 For a description of R 15 Description of L 3 For a description of L 3 For the description of Y, see the above description of Y. m- For a description of [M], see the above m- For the description of g, refer to the above description of g. For the description of m, refer to the above description of m. No further details will be given here.

[0552] Exemplarily, the value of g is 2, 3, 4, 5 or 6, etc., which is not limited here. By setting the value of g to a positive integer greater than or equal to 2, each benzophenone group in the third type of photosensitive material can be connected to a carrier injection material molecule, and therefore, the third type of photosensitive material molecules containing g benzophenone groups can realize the connection of g number of carrier injection material (including the first carrier injection material, the second carrier injection material and the third carrier injection material) molecules to form a cross-linked carrier injection material (including the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material).

[0553] In some embodiments, R B For R 16 , and Q is R 17 and at least two L 4At this time, the third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-B).

[0554]

[0555] Wherein, the benzophenone group is the third photosensitive group.

[0556] L 4 Any one selected from a single bond, an ester bond, an ether bond and a thioether bond.

[0557] R 16 and R 17 The same or different, each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight chain or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0558] [N] n+ Any one selected from organic cations and inorganic cations; organic cations include methylamine ions; inorganic cations include sodium ions and potassium ions.

[0559] h is selected from a positive integer greater than or equal to 2.

[0560] n is selected from a positive integer greater than or equal to 1.

[0561] It should be noted that h represents the number of corresponding groups. The value of h is a positive integer greater than or equal to 2, that is, h can be 2, 3 or 4, and integers greater than 4.

[0562] If R 17 There are more C atoms in the photosensitive material, and the value of h can be larger, for example, a positive integer greater than 6. However, the larger the value of h, the more difficult it is to synthesize and purify the third type of photosensitive material. However, in theory, the larger the value of h, the more reaction sites the third type of photosensitive material has. At the same time, too many reaction sites of the third type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of h can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0563] In some embodiments, any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material, and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-B).

[0564]

[0565] It should be noted that regarding R 16 For a description of R 16 Description of R 17 For a description of R17 Description of L 4 For a description of L 4 For the description of Y, see the above description of Y. n+ For a description of [N], see the previous section n+ For the description of h, refer to the above description of h. For the description of n, refer to the above description of n. No further details will be given here.

[0566] Exemplarily, the value of h is 2, 3, 4, 5 or 6, etc., which is not limited here. By setting the value of h to be a positive integer greater than or equal to 2, each benzophenone group in the third type of photosensitive material can be connected to a carrier injection material molecule, and therefore, the third type of photosensitive material molecules containing h number of benzophenone groups can realize the connection of h number of carrier injection material (including the first carrier injection material, the second carrier injection material and the third carrier injection material) molecules to form a cross-linked carrier injection material (including the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material).

[0567] In some examples, the third type of photosensitive material is selected from the following structural formulas.

[0568]

[0569] In some embodiments, the third photosensitive group is an azide group, and the third type of photosensitive material containing the azide group can be cross-linked with the carrier injection material. For example, under light radiation (hv), the azide group is photolyzed to generate an active intermediate free radical nitrogen carbene The nitrogen carbene will attack nearby CH bonds to produce a cross-linking reaction.

[0570] Exemplarily, under light irradiation, 3 ) of the third type of photosensitive material undergoes a crosslinking reaction with the CH bond in the carrier injection material, and the crosslinking reaction is shown in the following formula. Among them, the third type of photosensitive material contains at least two azide groups (-N 3 ), each azide group (-N 3) will generate a nitrogen carbene, each nitrogen carbene attacks a carrier injection material molecule, and through the CH insertion reaction, the third type of photosensitive material and the carrier injection material are cross-linked to form a cross-linked carrier injection material (including: the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material). The solubility of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material in the third type of solvent is reduced, that is, the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material are insoluble in the developer (for example: the third solvent, the sixth solvent or the ninth solvent) during development.

[0571]

[0572] It should be noted that the third type of photosensitive material and carrier injection material in the formula can be non-ionic organic materials or ionic organic materials (with ionic groups and charges, not shown in the formula), and there is no limitation here.

[0573] In some embodiments, R A For R 18 At this time, the third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-C).

[0574]

[0575] Wherein, the azide group is the third photosensitive group.

[0576] R 18 Any one selected from a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0577] [Q] q- Any one selected from organic anions and inorganic anions; the organic anions include benzenesulfonate ions, salicylate ions, 3-hydroxy-2-naphthoate ions; the inorganic anions include chloride ions, sulfate ions, and nitrate ions.

[0578] i is selected from a positive integer greater than or equal to 2.

[0579] q is selected from a positive integer greater than or equal to 1.

[0580] It should be noted that i represents the number of corresponding groups. The value of i is a positive integer greater than or equal to 2, that is, i can be 2, 3 or 4, and integers greater than 4.

[0581] If R 18There are more C atoms in the photosensitive material, and the value of i can be larger, for example, a positive integer greater than 6. However, the larger the value of i, the more difficult it is to synthesize and purify the third type of photosensitive material when preparing it. However, in theory, the larger the value of i, the more reaction sites the third type of photosensitive material has. At the same time, too many reaction sites of the third type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of i can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0582] In some embodiments, any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material, and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-C).

[0583]

[0584] It should be noted that regarding R 18 For a description of R 18 For the description of Y, see the above description of Y. q- For a description of [Q], see the previous section q- For the description of i, refer to the above description of i. For the description of q, refer to the above description of q. No further details will be given here.

[0585] Exemplarily, the value of i is 2, 3, 4, 5 or 6, etc., which is not limited here. By setting the value of i to be a positive integer greater than or equal to 2, each azide group in the third type of photosensitive material can be connected to a carrier injection material molecule, and therefore, the third type of photosensitive material molecule containing i number of azide groups can realize the connection of i number of carrier injection material (including the first carrier injection material, the second carrier injection material and the third carrier injection material) molecules to form a cross-linked carrier injection material (including the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material).

[0586] In some embodiments, R B For R 19 At this time, the third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-D).

[0587]

[0588] Wherein, the azide group is the third photosensitive group.

[0589] R 19 Any one selected from a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0590] [T] t+ Any one selected from organic cations and inorganic cations; the organic cations include methylamine ions; the inorganic cations include sodium ions and potassium ions;

[0591] j is selected from a positive integer greater than or equal to 2;

[0592] t is selected from a positive integer greater than or equal to 1.

[0593] It should be noted that j represents the number of corresponding groups. The value of j is a positive integer greater than or equal to 2, that is, j can be 2, 3 or 4, and integers greater than 4.

[0594] If R 19 There are more C atoms in the photosensitive material, and the value of j can be larger, for example, a positive integer greater than 6. However, the larger the value of j, the more difficult it is to synthesize and purify when preparing the third type of photosensitive material. However, in theory, the larger the value of j, the more reaction sites the third type of photosensitive material has. At the same time, too many reaction sites of the third type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of j can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0595] In some embodiments, any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material, and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-D).

[0596]

[0597] It should be noted that regarding R 19 For a description of R 19 For the description of Y, see the above description of Y. t+ For a description of [T], see the previous section t+ For the description of j, refer to the above description of j. For the description of t, refer to the above description of t. No further details will be given here.

[0598] Exemplarily, the value of j is 2, 3, 4, 5 or 6, etc., which is not limited here. By setting the value of j to be a positive integer greater than or equal to 2, each azide group in the third type of photosensitive material can be connected to a carrier injection material molecule, and therefore, the third type of photosensitive material molecule containing j number of azide groups can realize the connection of j number of carrier injection material (including the first carrier injection material, the second carrier injection material and the third carrier injection material) molecules to form a cross-linked carrier injection material (including the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material).

[0599] In some examples, the third type of photosensitive material is selected from any one of the following structural formulas.

[0600]

[0601] (3E,5E)-3,5-bis(4-azido-2,5-diisopropyl-3,6-difluorobenzylidene)-1,1-dimethylpiperidin-one trifluorosulfonate;

[0602]

[0603] (3E,5E)-3,5-bis(4-azido-2,3,5,6-tetrafluorobenzylidene)-1,1-dimethylpiperidin-one trifluorosulfonate.

[0604] In some embodiments, the third photosensitive group is a diaziridine group, and the third type of photosensitive material containing the diaziridine group can be cross-linked with the carrier injection material. For example, under light radiation (hv), the diaziridine group is photolyzed to generate an active intermediate free radical carbene. The carbene will attack nearby CH bonds to cause cross-linking reactions.

[0605] Exemplarily, under light radiation, the third type of photosensitive material containing a diaziridine group undergoes a cross-linking reaction with the CH bond in the carrier injection material, and the cross-linking reaction is shown in the following formula. Among them, the third type of photosensitive material contains at least 2 diaziridine groups, each diaziridine group will produce a carbene, each carbene attacks a carrier injection material molecule, and through the CH insertion reaction, the third type of photosensitive material and the carrier injection material are cross-linked to form a cross-linked carrier injection material (including: a first cross-linked carrier injection material, a second cross-linked carrier injection material, and a third cross-linked carrier injection material). The solubility of the first cross-linked carrier injection material, the second cross-linked carrier injection material, and the third cross-linked carrier injection material in the third type of solvent is reduced, that is, the first cross-linked carrier injection material, the second cross-linked carrier injection material, and the third cross-linked carrier injection material are insoluble in the developer (for example: the third solvent, the sixth solvent, or the ninth solvent) during development.

[0606]

[0607] It should be noted that the third type of photosensitive material and carrier injection material in the formula can be non-ionic organic materials or ionic organic materials (with ionic groups and charges, not shown in the formula), and there is no limitation here.

[0608] In some embodiments, R C For R 21 , R D For R20 , and Q is R 15 and at least two L 3 At this time, the third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-E).

[0609]

[0610] Wherein, the diaziridine group is the third photosensitive group.

[0611] R 20 and R 21 The same or different, each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight chain or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0612] [U] u- Any one selected from organic anions and inorganic anions; the organic anions include benzenesulfonate ions, salicylate ions, 3-hydroxy-2-naphthoate ions; the inorganic anions include chloride ions, sulfate ions, and nitrate ions.

[0613] k is selected from a positive integer greater than or equal to 2.

[0614] u is selected from a positive integer greater than or equal to 1.

[0615] It should be noted that k represents the number of corresponding groups. The value of k is a positive integer greater than or equal to 2, that is, k can be 2, 3 or 4, and integers greater than 4.

[0616] If R 21 There are more C atoms in the photosensitive material, and the value of k can be larger, for example, a positive integer greater than 6. However, the larger the value of k, the more difficult it is to synthesize and purify when preparing the third type of photosensitive material. However, in theory, the larger the value of k, the more reaction sites the third type of photosensitive material has. At the same time, too many reaction sites of the third type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of k can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0617] In some embodiments, any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material, and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-E).

[0618]

[0619] It should be noted that regarding R 20 For a description of R 20 Description of R21 For a description of R 21 For the description of Y, see the above description of Y. u- For a description of [U] u- For the description of k, refer to the above description of k. For the description of u, refer to the above description of u. No further details will be given here.

[0620] Exemplarily, the value of k is 2, 3, 4, 5 or 6, etc., and is not limited here. By setting the value of k to a positive integer greater than or equal to 2, each diaziridine group in the third type of photosensitive material can be connected to a carrier injection material molecule. Therefore, the third type of photosensitive material molecule containing k number of diaziridine groups can realize the connection of k number of carrier injection material (including the first carrier injection material, the second carrier injection material and the third carrier injection material) molecules to form a cross-linked carrier injection material (including the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material).

[0621] In some embodiments, R C For R 23 , R D For R 22 At this time, the third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-F).

[0622]

[0623] Wherein, the diaziridine group is the third photosensitive group.

[0624] R 22 and R 23 The same or different, each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight chain or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40.

[0625] [W] z+ Any one selected from organic cations and inorganic cations; the organic cations include methylamine ions; the inorganic cations include sodium ions and potassium ions.

[0626] v is selected from a positive integer greater than or equal to 2;

[0627] z is selected from a positive integer greater than or equal to 1.

[0628] It should be noted that v represents the number of corresponding groups. The value of v is a positive integer greater than or equal to 2, that is, v can be 2, 3 or 4, and integers greater than 4.

[0629] If R 23 There are more C atoms in the photosensitive material, and the value of v can be larger, such as a positive integer greater than 6. However, the larger the value of v, the more difficult it is to synthesize and purify when preparing the third type of photosensitive material. However, in theory, the larger the value of v, the more reaction sites the third type of photosensitive material has. At the same time, too many reaction sites of the third type of photosensitive material will increase the molecular steric hindrance. Therefore, the value of v can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0630] In some embodiments, any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material, and the third cross-linked carrier injection material includes any one of the structures represented by the following general formula (III-F).

[0631]

[0632] It should be noted that regarding R 22 For a description of R 22 Description of R 23 For a description of R 23 For the description of Y, see the above description of Y. z+ For a description of [W], see the above z+ For the description of v, refer to the above description of v. For the description of z, refer to the above description of z. No further details will be given here.

[0633] Exemplarily, the value of v is 2, 3, 4, 5 or 6, etc., which is not limited here. By setting the value of v to a positive integer greater than or equal to 2, each diaziridine group in the third type of photosensitive material can be connected to a carrier injection material molecule. Therefore, the third type of photosensitive material molecule containing v number of diaziridine groups can realize the connection of v number of carrier injection material (including the first carrier injection material, the second carrier injection material and the third carrier injection material) molecules to form a cross-linked carrier injection material (including the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material).

[0634] In some examples, the third type of photosensitive material is selected from the following structural formula (Fast Blue B Salt (FBBS)).

[0635]

[0636] In some examples, the reaction formula of the third type of photosensitive material and the carrier injection material is shown in Formula (X-1).

[0637]

[0638] In the formula, PEDOT represents the hole injection material, and its structure is shown in the following formula.

[0639]

[0640] It can be understood that, as described in the preparation methods of the first light-emitting device 201, the second light-emitting device 202, and the third light-emitting device 203, the carrier material injection material and the third type of photosensitive material are dissolved in the third solution, the sixth solution, or the ninth solution and then coated or printed. The solvents of the third solution, the sixth solution, and the ninth solution are the third solvent, the sixth solvent, and the ninth solvent, respectively, and all three solvents belong to the third type of solvent. By setting the third type of photosensitive material to be an ionic material (such as a water-soluble organic salt) selected from the general formula (VI-A), general formula (VI-B), general formula (VI-C), general formula (VI-D), general formula (VI-E) or general formula (VI-F), the third type of photosensitive material can be increased in terms of solubility in the third type of solvent (such as water, ethanol, methanol, N,N-dimethylformamide, N-methylformamide and dichlorothionyl), which is beneficial to the preparation of the carrier injection layer (including the first carrier injection layer 141, the second carrier injection layer 142 and the third carrier injection layer 143). On the other hand, since the carrier transport layer adjacent to the carrier injection layer (including the first carrier transport layer 131, the second carrier transport layer 132 and the third carrier transport layer 133) is prepared using the second solvent, through the above-mentioned setting, the solubility of the third type of photosensitive material in the third solvent is greater than the solubility in the second solvent (including the second solvent, the fifth solvent, and the eighth solvent). In this way, when preparing the first light-emitting device 201, the second light-emitting device 202, and the third light-emitting device 203, the third type of photosensitive material is not easily transferred from the initial carrier injection layer (including the first initial carrier injection layer 141i, the second initial carrier injection layer 142i, and the third initial carrier injection layer 143i) to the initial carrier transport layer (including the first initial carrier transport layer 131i, the second initial carrier transport layer 132i, and the third initial carrier transport layer 133i).

[0641] In some embodiments, R 5 , R 6 and R 7 The same or different, each independently selected from any one of a C10-C30 saturated or unsaturated straight chain or branched alkyl group, a C10-C30 saturated or unsaturated straight chain or branched alkyl group in which at least one hydrogen atom is substituted by a fluorine atom, and a C10-C30 saturated or unsaturated straight chain or branched alkyl group containing at least one ether bond.

[0642] It is understandable that, as described in the preparation methods of the first light emitting device 201, the second light emitting device 202, and the third light emitting device 203, the quantum dot material and the first type of photosensitive material are dissolved in the first solution, the fourth solution, or the seventh solution before coating or printing. The solvents of the first solution, the fourth solution, and the seventh solution are the first solvent, the fourth solvent, and the seventh solvent, respectively, and all three solvents belong to the first type of solvent. 5 , R 6 and R 7 Any one of a saturated or unsaturated straight or branched alkyl group selected from C10 to C30, a saturated or unsaturated straight or branched alkyl group having at least one hydrogen atom replaced by a fluorine atom, and a saturated or unsaturated straight or branched alkyl group having at least one ether bond, can be set, so that R 5 , R 6 and R 7 The polarity of the first type of photosensitive material is increased. On the one hand, the solubility of the first type of photosensitive material in the first type of solvent (such as octane and propylene glycol methyl ether acetate) can be increased, which is beneficial to the preparation of the luminescent pattern 23 (including the first luminescent pattern 23a, the second luminescent pattern 23b and the third luminescent pattern 23c). On the other hand, since the carrier transport layers adjacent to the light-emitting pattern 23 (including the first carrier transport layer 131, the second carrier transport layer 132 and the third carrier transport layer 133) are prepared using the second type of solvent, through the above-mentioned setting, the solubility of the first type of photosensitive material in the first type of solvent is greater than the solubility in the second type of solvent (including the second solvent, the fifth solvent, and the eighth solvent). In this way, when preparing the first light-emitting device 201, the second light-emitting device 202, and the third light-emitting device 203, the first type of photosensitive material is not easily transferred from the initial light-emitting pattern (including the first initial light-emitting pattern 23ai, the second initial light-emitting pattern 23bi, and the third initial light-emitting pattern 23ci) to the initial carrier transport layer (including the first initial carrier transport layer 131i, the second initial carrier transport layer 132i, and the third initial carrier transport layer 133i).

[0643] In some embodiments, R 10 , R 11 and R 12 The same or different, each independently selected from a C1-C8 saturated or unsaturated straight chain or branched alkyl group.

[0644] It can be understood that, as described in the preparation methods of the first light-emitting device 201, the second light-emitting device 202, and the third light-emitting device 203, the carrier material transport material and the second type of photosensitive material are dissolved in the second solution, the fifth solution, ...

Claims

1. A light-emitting substrate, characterized in that: include: substrate; A plurality of light emitting devices are disposed on the substrate and arranged along a first direction, wherein the first direction is parallel to the plane where the substrate is located; Each of the plurality of light emitting devices comprises: a first electrode, a second electrode, and a light emitting pattern disposed between the first electrode and the second electrode; The plurality of light-emitting devices include: at least one first light-emitting device, each of the at least one first light-emitting device includes: a first light-emitting pattern, and a first carrier transport layer and a first carrier injection layer disposed between the substrate and the first light-emitting pattern; the first carrier transport layer is closer to the first light-emitting pattern than the first carrier injection layer; Among them, the material of the first light-emitting pattern includes: a first cross-linked light-emitting material; the material of the first carrier transport layer includes: a first cross-linked carrier transport material; the material of the first carrier injection layer includes: a first cross-linked carrier injection material.

2. The light-emitting substrate according to claim 1, characterized in that: The plurality of light emitting devices further comprises: At least one second light-emitting device; each of the at least one second light-emitting device comprises: a second light-emitting pattern, and a second sacrificial layer group disposed between the substrate and the second light-emitting pattern, the second sacrificial layer group comprising a second carrier transport layer; Wherein, the material of the second light-emitting pattern includes: a second cross-linked light-emitting material; and the material of the second carrier transport layer includes: a second cross-linked carrier transport material.

3. The light-emitting substrate according to claim 2, characterized in that: The second sacrificial layer group further includes: a second carrier injection layer; the second carrier injection layer is located on a side of the second carrier transport layer close to the substrate, and the material of the second carrier injection layer includes: a second cross-linked carrier injection material.

4. The light-emitting substrate according to claim 2 or 3, characterized in that: The plurality of light emitting devices further comprises: At least one third light-emitting device; each of the at least one third light-emitting device comprises: a third light-emitting pattern, and a third sacrificial layer group disposed between the substrate and the third light-emitting pattern, the third sacrificial layer group comprising a third carrier transport layer; Wherein, the material of the third light-emitting pattern includes: a third cross-linked light-emitting material; the material of the third carrier transport layer includes: a third cross-linked carrier transport material.

5. The light-emitting substrate according to claim 4, characterized in that: The third sacrificial layer group further includes: a third carrier injection layer; the third carrier injection layer is located on a side of the third carrier transport layer close to the substrate, and the material of the third carrier injection layer includes: a third cross-linked carrier injection material.

6. The light-emitting substrate according to claim 5, characterized in that: The first cross-linked luminescent material is generated by cross-linking a first quantum dot material under light radiation; the solubility of the first quantum dot material in a first solvent is greater than the solubility of the first cross-linked luminescent material in the first solvent; or, the first cross-linked luminescent material is generated by cross-linking a first quantum dot material and a first photosensitive material under light radiation; the solubility of the first quantum dot material and the first photosensitive material in the first solvent is greater than the solubility of the first cross-linked luminescent material in the first solvent; The first cross-linked carrier transport material is generated by cross-linking the first carrier transport material under light radiation, and the solubility of the first carrier transport material in the second solvent is greater than the solubility of the first cross-linked carrier transport material in the second solvent; or, the first cross-linked carrier transport material is generated by cross-linking the first carrier transport material and the second photosensitive material under light radiation, and the solubility of the first cross-linked carrier transport material and the second photosensitive material in the second solvent is greater than the solubility of the first cross-linked carrier transport material in the second solvent; The first cross-linked carrier injection material is generated by cross-linking the first carrier injection material under light radiation, and the solubility of the first carrier injection material in a third solvent is greater than the solubility of the first cross-linked carrier injection material in the third solvent; or, the first cross-linked carrier injection material is generated by cross-linking the first carrier injection material and the third photosensitive material under light radiation, and the solubility of the first carrier injection material and the third photosensitive material in the third solvent is greater than the solubility of the first cross-linked carrier injection material in the third solvent.

7. The light-emitting substrate according to claim 6, characterized in that: The second cross-linked luminescent material is generated by cross-linking the second quantum dot material under light radiation; the solubility of the second quantum dot material in the fourth solvent is greater than the solubility of the second cross-linked luminescent material in the fourth solvent; or, the second cross-linked luminescent material is generated by cross-linking the second quantum dot material and the fourth photosensitive material under light radiation; the solubility of the second quantum dot material and the fourth photosensitive material in the fourth solvent is greater than the solubility of the second cross-linked luminescent material in the fourth solvent; The second cross-linked carrier transport material is generated by cross-linking the second carrier transport material under light radiation, and the solubility of the second carrier transport material in the fifth solvent is greater than the solubility of the second cross-linked carrier transport material in the fifth solvent; or, the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material and the fifth photosensitive material under light radiation, and the solubility of the second carrier transport material and the fifth photosensitive material in the fifth solvent is greater than the solubility of the second cross-linked carrier transport material in the fifth solvent.

8. The light-emitting substrate according to claim 7, characterized in that: The second cross-linked carrier injection material is generated by cross-linking the second carrier injection material under light radiation, and the solubility of the second carrier injection material in the sixth solvent is greater than the solubility of the second cross-linked carrier injection material in the sixth solvent, or the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material and the sixth photosensitive material under light radiation, and the solubility of the second carrier injection material and the sixth photosensitive material in the sixth solvent is greater than the solubility of the second cross-linked carrier injection material in the sixth solvent.

9. The light-emitting substrate according to claim 8, characterized in that: The third cross-linked luminescent material is generated by cross-linking the third quantum dot material under light radiation; the solubility of the third quantum dot material in the seventh solvent is greater than the solubility of the third cross-linked luminescent material in the seventh solvent; or, the third cross-linked luminescent material is generated by cross-linking the third quantum dot material and the seventh photosensitive material under light radiation; the solubility of the third quantum dot material and the seventh photosensitive material in the seventh solvent is greater than the solubility of the third cross-linked luminescent material in the seventh solvent; The third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation, and the solubility of the third carrier transport material in the eighth solvent is greater than the solubility of the third cross-linked carrier transport material in the eighth solvent; or, the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation, and the solubility of the third carrier transport material and the eighth photosensitive material in the eighth solvent is greater than the solubility of the third cross-linked carrier transport material in the eighth solvent.

10. The light emitting substrate according to claim 9, characterized in that: The third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation, and the solubility of the third carrier injection material in the ninth solvent is greater than the solubility of the third cross-linked carrier injection material in the ninth solvent; Alternatively, the third cross-linked carrier injection material is generated by cross-linking a third carrier injection material and a ninth photosensitive material under light radiation, and the solubility of the third carrier injection material and the ninth photosensitive material in a ninth solvent is greater than the solubility of the third cross-linked carrier injection material in the ninth solvent.

11. The light emitting substrate according to claim 5, characterized in that: The at least one first light emitting device is configured to emit light of a first wavelength; Each of the at least one first light-emitting device further includes: a first pattern layer and a second pattern layer, wherein the first pattern layer is arranged on a side of the first light-emitting pattern away from the substrate, and the second pattern layer is arranged on a side of the first pattern layer away from the substrate, and the first light-emitting pattern, the first pattern layer and the second pattern layer are in contact with each other in sequence.

12. The light emitting substrate according to claim 11, characterized in that: In the case where the second sacrificial layer group includes a second carrier transport layer, the thickness of the first pattern layer is less than the thickness of the second carrier transport layer; In the case where the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material under light radiation, the material of the first pattern layer includes: the second carrier transport material; or, in the case where the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material and the fifth photosensitive material under light radiation, the material of the first pattern layer includes: the second carrier transport material and the fifth photosensitive material; or, In the case where the second sacrificial layer group includes a second carrier transport layer and a second carrier injection layer, the thickness of the first pattern layer is less than the thickness of the second carrier injection layer; in the case where the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material under light radiation, the material of the first pattern layer includes: the second carrier injection material; or, in the case where the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material and the sixth photosensitive material under light radiation, the material of the first pattern layer includes: the second carrier injection material and the sixth photosensitive material.

13. The light emitting substrate according to claim 11, characterized in that: In the case where the third sacrificial layer group includes a third carrier transport layer, the thickness of the second pattern layer is less than the thickness of the third carrier transport layer; In the case where the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation, the material of the second pattern layer includes: the third carrier transport material; or, in the case where the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation, the material of the second pattern layer includes: the third carrier transport material and the eighth photosensitive material; or, When the third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, the thickness of the second pattern layer is less than the thickness of the third carrier injection layer; when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation, the material of the second pattern layer includes: the third carrier injection material; or, when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material and the ninth photosensitive material under light radiation, the material of the second pattern layer includes: the third carrier injection material and the ninth photosensitive material.

14. The light emitting substrate according to claim 5, characterized in that: The at least one second light emitting device is configured to emit light at a second wavelength; The at least one second light-emitting device also includes: a third pattern layer and a fourth pattern layer, the third pattern layer is arranged on a side of the second sacrificial layer group close to the substrate, the fourth pattern layer is arranged on a side of the second light-emitting pattern away from the substrate, and the third pattern layer, the second sacrificial layer group, the second light-emitting pattern and the fourth pattern layer are in contact in sequence.

15. The light emitting substrate according to claim 14, characterized in that: The thickness of the third pattern layer is less than the thickness of the first carrier injection layer; the material of the third pattern layer includes: the first cross-linked carrier injection material; In the case where the third sacrificial layer group includes a third carrier transport layer, the thickness of the fourth pattern layer is less than the thickness of the third carrier transport layer; in the case where the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation, the material of the fourth pattern layer includes: the third carrier transport material; or, in the case where the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation, the material of the fourth pattern layer includes: the third carrier transport material and the eighth photosensitive material; or, When the third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, the thickness of the fourth pattern layer is less than the thickness of the third carrier injection layer; when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation, the material of the fourth pattern layer includes: the third carrier injection material; or, when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material and the ninth photosensitive material under light radiation, the material of the fourth pattern layer includes: the third carrier injection material and the ninth photosensitive material.

16. The light emitting substrate according to claim 4, characterized in that: The at least one third light emitting device is configured to emit light at a third wavelength; The at least one third light-emitting device also includes: a fifth pattern layer and a sixth pattern layer, the sixth pattern layer is arranged on a side of the third sacrificial layer group close to the substrate, the fifth pattern layer is arranged on a side of the sixth pattern layer close to the substrate, and the third sacrificial layer group, the sixth pattern layer and the fifth pattern layer are in contact in sequence.

17. The light emitting substrate according to claim 16, characterized in that: The thickness of the fifth pattern layer is less than the thickness of the first carrier injection layer; the material of the fifth pattern layer includes: the first cross-linked carrier injection material; In the case where the second sacrificial layer group includes a second carrier transport layer, the thickness of the sixth pattern layer is less than the thickness of the second carrier transport layer; the material of the sixth pattern layer includes: the second cross-linked carrier transport material; or, In the case where the second sacrificial layer group includes a second carrier transport layer and a second carrier injection layer, the thickness of the sixth pattern layer is less than the thickness of the second carrier injection layer; and the material of the sixth pattern layer includes: the second cross-linked carrier injection material.

18. The light emitting substrate according to claim 4, characterized in that: The at least one first light emitting device is configured to emit light of a first wavelength, the light of the first wavelength being red light; The at least one second light emitting device is configured to emit light of a second wavelength, wherein the light of the second wavelength is green light; The at least one third light emitting device is configured to emit light of a third wavelength, the light of the third wavelength being blue light.

19. The light emitting substrate according to claim 5, characterized in that: Also includes: A pixel defining layer, wherein a plurality of openings are disposed on the pixel defining layer, and the plurality of light emitting devices are disposed in the plurality of openings in a one-to-one correspondence; A seventh pattern layer, an eighth pattern layer and a ninth pattern layer are disposed on a side of the pixel defining layer away from the substrate. The seventh pattern layer, the eighth pattern layer and the ninth pattern layer are disposed sequentially in a direction away from the substrate, and the seventh pattern layer, the eighth pattern layer and the ninth pattern layer are contacted sequentially.

20. The light emitting substrate according to claim 19, characterized in that: The thickness of the seventh pattern layer is less than the thickness of the first carrier injection layer; In the case where the first cross-linked carrier injection material is generated by cross-linking the first carrier injection material under light radiation, the material of the seventh pattern layer includes: the first carrier injection material; or, in the case where the first cross-linked carrier injection material is generated by cross-linking the first carrier injection material and the third photosensitive material under light radiation, the material of the seventh pattern layer includes: the first carrier injection material and the third photosensitive material; In the case where the second sacrificial layer group includes a second carrier transport layer, the thickness of the eighth pattern layer is less than the thickness of the second carrier transport layer; in the case where the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material under light radiation, the material of the eighth pattern layer includes: the second carrier transport material; or, in the case where the second cross-linked carrier transport material is generated by cross-linking the second carrier transport material and the fifth photosensitive material under light radiation, the material of the eighth pattern layer includes: the second carrier transport material and the fifth photosensitive material; or, In the case where the second sacrificial layer group includes a second carrier transport layer and a second carrier injection layer, the thickness of the eighth pattern layer is less than the thickness of the second carrier injection layer; in the case where the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material under light radiation, the material of the eighth pattern layer includes: the second carrier injection material; or, in the case where the second cross-linked carrier injection material is generated by cross-linking the second carrier injection material and the sixth photosensitive material under light radiation, the material of the eighth pattern layer includes: the second carrier injection material and the sixth photosensitive material.

21. The light emitting substrate according to claim 19, characterized in that: In the case where the third sacrificial layer group includes a third carrier transport layer, the thickness of the ninth pattern layer is less than the thickness of the third carrier transport layer; In the case where the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material under light radiation, the material of the ninth pattern layer includes: the third carrier transport material; or, in the case where the third cross-linked carrier transport material is generated by cross-linking the third carrier transport material and the eighth photosensitive material under light radiation, the material of the ninth pattern layer includes: the third carrier transport material and the eighth photosensitive material; or, The third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, and the thickness of the ninth pattern layer is less than the thickness of the third carrier injection layer; when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material under light radiation, the material of the ninth pattern layer includes: the third carrier injection material; or, when the third cross-linked carrier injection material is generated by cross-linking the third carrier injection material and the ninth photosensitive material under light radiation, the material of the ninth pattern layer includes: the third carrier injection material and the ninth photosensitive material.

22. The light emitting substrate according to claim 4, characterized in that: Any one of the first cross-linked luminescent material, the second cross-linked luminescent material and the third cross-linked luminescent material comprises any one of the structures represented by the following general formula (IA); or, Any one of the first cross-linked luminescent material, the second cross-linked luminescent material and the third cross-linked luminescent material comprises any one of the structures represented by the following general formula (IB); or, Any one of the first cross-linked luminescent material, the second cross-linked luminescent material and the third cross-linked luminescent material comprises any one of the structures represented by the following general formula (IC); Wherein, L1 is selected from any one of a single bond, an ester bond, an ether bond and a thioether bond; R2, R3, R4, R5, R6, R7 and R8 are independently selected from any one of a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40; QD represents any one of the quantum dot entities; the quantum dot entities include: any one of II-VI group quantum dots, III-V group quantum dots, IV-VI group quantum dots, core-shell structure quantum dots and ABX3 type perovskite quantum dots; in ABX3 type perovskite quantum dots, A is CH3NH3 + , NH2CH=NH2 and Cs + One or more of, B is Pb 2+ and Sn 2+ One or two of the following, X is Cl - Br - and I - One or more of the ABX3 type perovskite quantum dots include CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbI3, CsPbBr3, CsPbCl3 and CsPbI3; R1' is selected from any one of the remaining structures of R1 after removing one hydrogen from a carboxyl group, an amino group and a thiol group; R1 is selected from any one of a carboxyl group containing a C1-C40 carbon chain, an amino group containing a C1-C40 carbon chain and a thiol group containing a C1-C40 carbon chain; any one of the carboxyl group, the amino group and the thiol group is coordinated and connected with the quantum dot body; a, b, and c are independently selected from positive integers greater than or equal to 2.

23. The light emitting substrate according to claim 4, characterized in that: Any one of the first cross-linked carrier transport material, the second cross-linked carrier transport material and the third cross-linked carrier transport material comprises any one of the structures represented by the following general formula (II-A); or Any one of the first cross-linked carrier transport material, the second cross-linked carrier transport material and the third cross-linked carrier transport material comprises any one of the structures represented by the following general formula (II-B); or, Any one of the first cross-linked carrier transport material, the second cross-linked carrier transport material and the third cross-linked carrier transport material comprises any one of the structures represented by the following general formula (II-C); Wherein, L2 is selected from any one of a single bond, an ester bond, an ether bond and a thioether bond; R9, R 10 , R 11 , R 12 and R 13 Each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40; X represents the remaining structure of any one of the first carrier transport material, the second carrier transport material and the third carrier transport material after removing the CH bond; the CH bond is used to undergo a cross-linking reaction with the second photosensitive group of the second type of photosensitive material under light radiation; the second type of photosensitive material is one of the second photosensitive material, the fifth photosensitive material and the eighth photosensitive material; d, e, and f are independently selected from positive integers greater than or equal to 2.

24. The light-emitting substrate according to claim 5, characterized in that: Any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material comprises any one of the structures represented by the following general formula (III-A); or, Any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material comprises any one of the structures represented by the following general formula (III-B); or, Any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material comprises any one of the structures represented by the following general formula (III-C); or, Any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material comprises any one of the structures represented by the following general formula (III-D); or, Any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material comprises any one of the structures represented by the following general formula (III-E); or, Any one of the first cross-linked carrier injection material, the second cross-linked carrier injection material and the third cross-linked carrier injection material comprises any one of the structures represented by the following general formula (III-F); Wherein, L3 and L4 are independently selected from any one of a single bond, an ester bond, an ether bond and a thioether bond; R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , R 21 , R 22 and R 23 Each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40; Y represents the remaining structure of any one of the first carrier injection material, the second carrier injection material and the third carrier injection material after removing the CH bond; the CH bond is used to undergo a cross-linking reaction with the third photosensitive group of the third type of photosensitive material under light radiation; the third type of photosensitive material is one of the third photosensitive material, the sixth photosensitive material and the ninth photosensitive material; [M] m- , [Q] q- and [U] u- Each of the organic anions and inorganic anions is independently selected from any one of them; the organic anions include benzenesulfonate ions, salicylate ions, and 3-hydroxy-2-naphthoate ions; the inorganic anions include chloride ions, sulfate ions, and nitrate ions; [N] n+ , [T] t+ and [W] z+ Each of the organic cations and inorganic cations is independently selected from any one of them; the organic cations include methylamine ions; the inorganic cations include sodium ions and potassium ions; g, h, i, j, k and v are independently selected from positive integers greater than or equal to 2; m, n, q, t, u and z are each independently selected from positive integers greater than or equal to 1.

25. The light emitting substrate according to claim 10, characterized in that: The first photosensitive material, the fourth photosensitive material and the seventh photosensitive material are independently selected from any one of the first type of photosensitive materials; the first type of photosensitive material includes: a first photosensitive group, the first photosensitive group undergoes a cross-linking reaction with a quantum dot material under light radiation; the quantum dot material is one of the first quantum dot material, the second quantum dot material and the third quantum dot material; The second photosensitive material, the fifth photosensitive material and the eighth photosensitive material are independently selected from any one of the second type of photosensitive materials; the second type of photosensitive material includes: a second photosensitive group, the second photosensitive group undergoes a cross-linking reaction with a carrier transport material under light radiation; the carrier transport material is one of the first carrier transport material, the second carrier transport material and the third carrier transport material; The third photosensitive material, the sixth photosensitive material and the ninth photosensitive material are independently selected from any one of the third type of photosensitive materials; the third type of photosensitive materials include: a third photosensitive group, the third photosensitive group undergoes a cross-linking reaction with a carrier injection material under light radiation; the carrier injection material is one of the first carrier injection material, the second carrier injection material and the third carrier injection material; Furthermore, any two of the first photosensitive group, the second photosensitive group and the third photosensitive group may be the same or different.

26. The light-emitting substrate according to claim 25, characterized in that: Under ultraviolet light with a wavelength range of 200nm to 400nm, the molar extinction coefficient of the third type of photosensitive material is greater than 1cm -1 (mol / L) -1 .

27. The light-emitting substrate according to claim 25, characterized in that: The first type of photosensitive material is selected from any one of the structures shown in the following general formula (IV-A); or, The first type of photosensitive material is selected from any one of the structures shown in the following general formula (IV-B); or, The first type of photosensitive material is selected from any one of the structures shown in the following general formula (IV-C); Wherein, in the general formula (IV-A), the benzophenone group is the first photosensitive group; in the general formula (IV-B), the azide group is the first photosensitive group; in the general formula (IV-C), the diaziridine group is the first photosensitive group; L1 is selected from any one of a single bond, an ester bond, an ether bond and a thioether bond; R2, R3, R4, R5, R6, R7 and R8 are independently selected from any one of a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40; a, b, and c are independently selected from positive integers greater than or equal to 2.

28. The light-emitting substrate according to claim 27, characterized in that: The second type of photosensitive material is selected from any one of the structures represented by the following general formula (VA); or, The second type of photosensitive material is selected from any one of the structures shown in the following general formula (VB); or, The second type of photosensitive material is selected from any one of the structures represented by the following general formula (VC); Wherein, in the general formula (VA), the benzophenone group is the second photosensitive group; in the general formula (VB), the azide group is the second photosensitive group; in the general formula (VC), the diaziridine group is the second photosensitive group; L2 is selected from any one of a single bond, an ester bond, an ether bond and a thioether bond; R9, R 10 , R 11 , R 12 and R 13 Each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40; d, e and f are independently selected from positive integers greater than or equal to 2.

29. The light-emitting substrate according to claim 28, characterized in that: The third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-A); or, The third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-B); or, The third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-C); or, The third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-D); or, The third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-E); or, The third type of photosensitive material is selected from any one of the structures shown in the following general formula (VI-F); Wherein, in general formula (VI-A) and general formula (VI-B), the benzophenone group is the third photosensitizing group; in general formula (VI-C) and general formula (VI-D), the azide group is the third photosensitizing group; in general formula (VI-E) and general formula (VI-F), the diaziridine group is the third photosensitizing group; L3 and L4 are independently selected from any one of a single bond, an ester bond, an ether bond and a thioether bond; R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , R 21 , R 22 and R 23 Each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight or branched alkyl group containing C1 to C40, a cycloalkyl group containing C3 to C40, a heterocycloalkyl group containing C3 to C40, an aryl group containing C6 to C40, and a heteroaryl group containing C6 to C40; [M] m- , [Q] q- and [U] u- Each of the organic anions and inorganic anions is independently selected from any one of them; the organic anions include benzenesulfonate ions, salicylate ions, and 3-hydroxy-2-naphthoate ions; the inorganic anions include chloride ions, sulfate ions, and nitrate ions; [N] n+ , [T] t+ and [W] z+ Each of the organic cations and inorganic cations is independently selected from any one of them; the organic cations include methylamine ions; the inorganic cations include sodium ions and potassium ions; g, h, i, j, k and v are independently selected from positive integers greater than or equal to 2; m, n, q, t, u and z are each independently selected from positive integers greater than or equal to 1.

30. The light-emitting substrate according to claim 29, characterized in that: R5, R6 and R7 are independently selected from any one of a C10-C30 saturated or unsaturated straight or branched alkyl group, a C10-C30 saturated or unsaturated straight or branched alkyl group in which at least one hydrogen atom is substituted by a fluorine atom, and a C10-C30 saturated or unsaturated straight or branched alkyl group containing at least one ether bond; and / or, R 10 , R 11 and R 12 are independently selected from C1-C8 saturated or unsaturated straight or branched alkyl groups; and / or, R 15 , R 17 , R 18 , R 19 , R 21 and R 23 They are independently selected from any one of a C1~C40 carbon chain containing an ester bond, a C1~C40 carbon chain containing an ether bond, a C1~C40 carbon chain containing a carbonyl group, a C1~C40 carbon chain containing an amide group, a C1~C40 carbon chain containing a carboxyl group, a C1~C40 carbon chain containing an amino group and a C1~C40 carbon chain containing an aldehyde group.

31. The light-emitting substrate according to claim 25, characterized in that: Any one of the first quantum dot material, the second quantum dot material and the third quantum dot material comprises: a quantum dot body and a first ligand material coordinated to the quantum dot body; the first ligand material contains a carbon-hydrogen insertion group ZH; the carbon-hydrogen insertion group ZH is configured to undergo a carbon-hydrogen insertion reaction with the first type of photosensitive group under light radiation; and / or, Any one of the first carrier transport material, the second carrier transport material and the third carrier transport material comprises: a carbon-hydrogen insertion group ZH; the carbon-hydrogen insertion group ZH is configured to undergo a carbon-hydrogen insertion reaction with the second type of photosensitive group under light radiation; and / or, Any one of the first carrier injection material, the second carrier injection material and the third carrier injection material comprises: a carbon-hydrogen insertion group ZH; the carbon-hydrogen insertion group ZH is configured to undergo a carbon-hydrogen insertion reaction with the third type of photosensitive group under light radiation; In the carbon-hydrogen insertion group ZH, Z is any one of primary carbon, secondary carbon and tertiary carbon.

32. The light-emitting substrate according to claim 10, characterized in that: The polarity of the third solvent is greater than the polarity of the second solvent; the polarity of the second solvent is greater than the polarity of the first solvent; and / or, The polarity of the sixth solvent is greater than the polarity of the fifth solvent; the polarity of the fifth solvent is greater than the polarity of the fourth solvent; and / or, The polarity of the ninth solvent is greater than that of the eighth solvent; and the polarity of the eighth solvent is greater than that of the seventh solvent.

33. The light-emitting substrate according to claim 10, characterized in that: The first type of solvent is at least one of octane and propylene glycol methyl ether acetate; the first type of solvent is any one of the first solvent, the fourth solvent and the seventh solvent; and / or, The second type of solvent is at least one of toluene, chlorobenzene and dichlorotoluene; the second type of solvent is any one of the second solvent, the fifth solvent and the eighth solvent; and / or, The third type of solvent is at least one of water, ethanol, methanol, N,N-dimethylformamide, N-methylformamide and dichlorothionyl; the third type of solvent is any one of the third solvent, the sixth solvent and the ninth solvent.

34. The light-emitting substrate according to claim 5, characterized in that: The first carrier injection layer, the second carrier injection layer and the third carrier injection layer are hole injection layers; the first carrier transport layer, the second carrier transport layer and the third carrier transport layer are hole transport layers.

35. A method for preparing a light-emitting substrate, characterized in that: include: forming a plurality of light emitting devices on a substrate; The plurality of light emitting devices are arranged along a first direction, and the first direction is parallel to the plane where the substrate is located; Each of the plurality of light emitting devices comprises: a first electrode, a second electrode, and a light emitting pattern disposed between the first electrode and the second electrode; The plurality of light-emitting devices include: at least one first light-emitting device, each of the at least one first light-emitting device includes: a first light-emitting pattern, and a first carrier transport layer and a first carrier injection layer disposed between the substrate and the first light-emitting pattern; the first carrier transport layer is closer to the first light-emitting pattern than the first carrier injection layer; Among them, the material of the first light-emitting pattern includes: a first cross-linked light-emitting material; the material of the first carrier transport layer includes: a first cross-linked carrier transport material; the material of the first carrier injection layer includes: a first cross-linked carrier injection material.

36. The method for preparing a light-emitting substrate according to claim 35, characterized in that: Forming the at least one first light emitting device, comprising: A first electrode layer is formed on the substrate; the first electrode layer includes a first electrode of at least one first light emitting device; A first initial carrier injection layer, a first initial carrier transport layer, and a first initial light-emitting pattern are sequentially formed on a side of the first electrode layer away from the substrate; wherein the material of the first initial carrier injection layer includes a first carrier injection material, or a first carrier injection material and a third photosensitive material; the material of the first initial carrier transport layer includes a first carrier transport material, or a first carrier transport material and a second photosensitive material; the material of the first initial light-emitting pattern includes a first quantum dot material, or a first quantum dot material and a first photosensitive material; Exposing the stacked first initial carrier injection layer, the first initial carrier transport layer, and the first initial light-emitting pattern to change the material of the exposed portion of the first initial carrier injection layer into a first cross-linked carrier injection material, the material of the exposed portion of the first initial carrier transport layer into a first cross-linked carrier transport material, and the material of the exposed portion of the first initial light-emitting pattern into a first cross-linked light-emitting material; The stacked first initial carrier injection layer, the first initial carrier transport layer, and the first initial light emitting pattern are developed to form a stacked first carrier injection layer, a first carrier transport layer, and a first light emitting pattern.

37. The method for preparing a light-emitting substrate according to claim 35, characterized in that: Forming the at least one first light emitting device, comprising: A first electrode layer is formed on the substrate; the first electrode layer includes a first electrode of at least one first light emitting device; A first initial carrier injection layer is formed on a side of the first electrode layer away from the substrate; the material of the first initial carrier injection layer includes a first carrier injection material, or the first carrier injection material and a third photosensitive material; exposing the first initial carrier injection layer to light, so that the material of the exposed portion of the first initial carrier injection layer is converted into a first cross-linked carrier injection material; A first initial carrier transport layer and a first initial light-emitting pattern are sequentially formed on a side of the first initial carrier injection layer away from the substrate; wherein the material of the first initial carrier transport layer includes a first carrier transport material, or a first carrier transport material and a second photosensitive material; and the material of the first initial light-emitting pattern includes a first quantum dot material, or a first quantum dot material and a first photosensitive material; Exposing the stacked first initial carrier transport layer and the first initial light emitting pattern to change the material of the exposed portion of the first initial carrier transport layer into a first cross-linked carrier transport material, and the material of the exposed portion of the first initial light emitting pattern into a first cross-linked light emitting material; The stacked first initial carrier injection layer, the first initial carrier transport layer, and the first initial light emitting pattern are developed to form a stacked first carrier injection layer, a first carrier transport layer, and a first light emitting pattern.

38. The method for preparing a light-emitting substrate according to claim 35, characterized in that: The preparation method is used to prepare the light-emitting substrate as claimed in claim 4, The forming of the plurality of light emitting devices on the substrate further comprises: forming the at least one second light emitting device, and forming the at least one third light emitting device; Wherein, in the case where the plurality of light-emitting devices further include at least one second light-emitting device, and each of the at least one second light-emitting device includes a second sacrificial layer group, and the second sacrificial layer group includes a second carrier transport layer, forming the at least one second light-emitting device includes: A second initial carrier transport layer and a second initial light-emitting pattern are sequentially formed on the first electrode layer and the side of the at least one first light-emitting device away from the substrate; wherein the material of the second initial carrier transport layer includes a second carrier transport material, or a second carrier transport material and a fifth photosensitive material; and the material of the second initial light-emitting pattern includes a second quantum dot material, or a second quantum dot material and a fourth photosensitive material; Exposing the stacked second initial carrier transport layer and the second initial light emitting pattern to change the material of the exposed portion of the second initial carrier transport layer into a second cross-linked carrier transport material, and the material of the exposed portion of the second initial light emitting pattern into a second cross-linked light emitting material; developing the stacked second initial carrier transport layer and the second initial light emitting pattern to form a stacked second carrier transport layer and a second light emitting pattern; In the case where the plurality of light-emitting devices further include at least one third light-emitting device, and each of the at least one third light-emitting device includes a third sacrificial layer group, and the third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, forming the at least one third light-emitting device includes: A third initial carrier transport layer and a third initial light-emitting pattern are sequentially formed on the first electrode layer, the at least one first light-emitting device and the at least one second light-emitting device on a side away from the substrate; wherein the material of the third initial carrier transport layer includes a third carrier transport material, or a third carrier transport material and an eighth photosensitive material; and the material of the third initial light-emitting pattern includes a third quantum dot material, or a third quantum dot material and a seventh photosensitive material; Exposing the stacked third initial carrier transport layer and the third initial light-emitting pattern to transform the exposed portion of the third initial carrier transport layer into a third cross-linked carrier transport material, and the exposed portion of the third initial light-emitting pattern into a third cross-linked light-emitting material; The stacked third initial carrier transport layer and the third initial light emitting pattern are developed to form a stacked third carrier transport layer and a third light emitting pattern.

39. The method for preparing a light-emitting substrate according to claim 35, characterized in that: The preparation method is used to prepare the light-emitting substrate as claimed in claim 5, The forming of the plurality of light emitting devices on the substrate further comprises: forming the at least one second light emitting device, and forming the at least one third light emitting device; Wherein, in the case where the plurality of light-emitting devices further include at least one second light-emitting device, and each of the at least one second light-emitting device includes a second sacrificial layer group, and the second sacrificial layer group includes a second carrier transport layer and a second carrier injection layer, forming the at least one second light-emitting device includes: A second initial carrier injection layer, a second initial carrier transport layer, and a second initial light-emitting pattern are sequentially formed on the first electrode layer and the at least one first light-emitting device on a side away from the substrate; wherein the material of the second initial carrier injection layer includes a second carrier injection material, or a second carrier injection material and a sixth photosensitive material; the material of the second initial carrier transport layer includes a second carrier transport material, or a second carrier transport material and a fifth photosensitive material; the material of the second initial light-emitting pattern includes a second quantum dot material, or a second quantum dot material and a fourth photosensitive material; Exposing the stacked second initial carrier injection layer, the second initial carrier transport layer, and the second initial light-emitting pattern to change the material of the exposed portion of the second initial carrier injection layer into a second cross-linked carrier injection material, the material of the exposed portion of the second initial carrier transport layer into a second cross-linked carrier transport material, and the material of the exposed portion of the second initial light-emitting pattern into a second cross-linked light-emitting material; Developing the stacked second initial carrier injection layer, the second initial carrier transport layer, and the second initial light emitting pattern to form a stacked second carrier injection layer, a second carrier transport layer, and a second light emitting pattern; In the case where the plurality of light-emitting devices further include at least one third light-emitting device, and each of the at least one third light-emitting device includes a third sacrificial layer group, and the third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, forming the at least one third light-emitting device includes: A third initial carrier injection layer, a third initial carrier transport layer, and a third initial light-emitting pattern are sequentially formed on the first electrode layer, the at least one first light-emitting device, and the at least one second light-emitting device on a side away from the substrate; wherein the material of the third initial carrier injection layer includes a third carrier injection material, or a third carrier injection material and a ninth photosensitive material; the material of the third initial carrier transport layer includes a third carrier transport material, or a third carrier transport material and an eighth photosensitive material; the material of the third initial light-emitting pattern includes a third quantum dot material, or a third quantum dot material and a seventh photosensitive material; Exposing the stacked third initial carrier injection layer, the third initial carrier transport layer, and the third initial light-emitting pattern to transform the material of the exposed portion of the third initial carrier injection layer into a third cross-linked carrier injection material, the material of the exposed portion of the third initial carrier transport layer into a third cross-linked carrier transport material, and the material of the exposed portion of the third initial light-emitting pattern into a third cross-linked light-emitting material; The stacked third initial carrier injection layer, the third initial carrier transport layer, and the third initial light emitting pattern are developed to form a stacked third carrier injection layer, a third carrier transport layer, and a third light emitting pattern.

40. The method for preparing a light-emitting substrate according to claim 35, characterized in that: The preparation method is used to prepare the light-emitting substrate as claimed in claim 5, The forming of the plurality of light emitting devices on the substrate further comprises: forming the at least one second light emitting device, and forming the at least one third light emitting device; Wherein, in the case where the plurality of light-emitting devices further include at least one second light-emitting device, and each of the at least one second light-emitting device includes a second sacrificial layer group, and the second sacrificial layer group includes a second carrier transport layer and a second carrier injection layer, forming the at least one second light-emitting device includes: forming a second initial carrier injection layer on a side of the first electrode layer and the at least one first light-emitting device away from the substrate, wherein the material of the second initial carrier injection layer includes a second carrier injection material, or the second carrier injection material and a sixth photosensitive material; exposing the second initial carrier injection layer to light, so that the material of the exposed portion of the second initial carrier injection layer is converted into a second cross-linked carrier injection material; A second initial carrier transport layer and a second initial light-emitting pattern are sequentially formed on a side of the second initial carrier injection layer away from the substrate; wherein the material of the second initial carrier transport layer includes a second carrier transport material, or a second carrier transport material and a fifth photosensitive material; and the material of the second initial light-emitting pattern includes a second quantum dot material, or a second quantum dot material and a fourth photosensitive material; Exposing the stacked second initial carrier transport layer and the second initial light emitting pattern to change the material of the exposed portion of the second initial carrier transport layer into a second cross-linked carrier transport material, and the material of the exposed portion of the second initial light emitting pattern into a second cross-linked light emitting material; Developing the stacked second initial carrier injection layer, the second initial carrier transport layer, and the second initial light emitting pattern to form a stacked second carrier injection layer, a second carrier transport layer, and a second light emitting pattern; In the case where the plurality of light-emitting devices further include at least one third light-emitting device, and each of the at least one third light-emitting device includes a third sacrificial layer group, and the third sacrificial layer group includes a third carrier transport layer and a third carrier injection layer, forming the at least one third light-emitting device includes: A third initial carrier injection layer is formed on a side of the first electrode layer, the at least one first light-emitting device and the at least one second light-emitting device away from the substrate; the material of the third initial carrier injection layer includes a third carrier injection material, or a third carrier injection material and a ninth photosensitive material; exposing the third initial carrier injection layer to light, so that the material of the exposed portion of the third initial carrier injection layer is converted into a third cross-linked carrier injection material; A third initial carrier transport layer and a third initial light-emitting pattern are sequentially formed on a side of the third initial carrier injection layer away from the substrate; wherein the material of the third initial carrier transport layer includes a third carrier transport material, or a third carrier transport material and an eighth photosensitive material; and the material of the third initial light-emitting pattern includes a third quantum dot material, or a third quantum dot material and a seventh photosensitive material; Exposing the stacked third initial carrier transport layer and the third initial light-emitting pattern to transform the exposed portion of the third initial carrier transport layer into a third cross-linked carrier transport material, and the exposed portion of the third initial light-emitting pattern into a third cross-linked light-emitting material; The stacked third initial carrier injection layer, the third initial carrier transport layer, and the third initial light emitting pattern are developed to form a stacked third carrier injection layer, a third carrier transport layer, and a third light emitting pattern.

41. The method for preparing a light-emitting substrate according to claim 39 or 40, characterized in that: The preparation method is used to prepare the light-emitting substrate as claimed in claim 25, In the initial light-emitting pattern, the ratio of the mass of the first type of photosensitive material to the mass of the quantum dot material is in a range of 0% to 30%; the initial light-emitting pattern is one of the first initial light-emitting pattern, the second initial light-emitting pattern and the third initial light-emitting pattern; and / or, In the initial carrier transport layer, the ratio of the mass of the second type of photosensitive material to the mass of the carrier transport material is in a range of 0% to 30%; the initial carrier transport layer is one of the first initial carrier transport layer, the second initial carrier transport layer and the third initial carrier transport layer; and / or, In the initial carrier injection layer, the ratio of the mass of the third type of photosensitive material to the mass of the carrier injection material ranges from 0% to 30%; the initial carrier injection layer is one of the first initial carrier injection layer, the second initial carrier injection layer and the third initial carrier injection layer.

42. A light emitting device, characterized in that: It comprises the light-emitting substrate as described in any one of claims 1 to 34, and a driving chip for driving the light-emitting substrate to emit light.

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