A method, apparatus, device and medium for controlling a porous metal microstructure
By designing control logic using electron beam 3D printing technology, the problem of controlling porous microstructures in tungsten alloys was solved, enabling rapid and low-cost production of porous metal parts to meet different application needs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BEIJING QINGYAN ZHISHU TECH CO LTD
- Filing Date
- 2023-09-12
- Publication Date
- 2026-06-12
Smart Images
Figure CN117182115B_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of additive manufacturing technology, and relates to a method for controlling porous metal microstructures, and more particularly to a method, apparatus, equipment and medium for controlling porous metal microstructures. Background Technology
[0002] For refractory metals such as tungsten alloys, their high melting point and ductile-brittle transition temperature make forming difficult. Tungsten parts are usually manufactured using powder metallurgy combined with hot working. However, conventional sintered tungsten has disadvantages such as low density, low strength, poor plasticity, and difficulty in controlling impurity content, which greatly limits its application range. Furthermore, tungsten that has undergone hot working such as extrusion and rolling is prone to recrystallization embrittlement and other problems, making it impossible to control the porosity of porous tungsten alloys.
[0003] Currently, tungsten alloy parts have special requirements for microstructures such as pores under different application backgrounds. For example, tungsten copper infiltration technology requires internal pores to be interconnected, so as to maintain a continuous channel for copper volatilization. Furthermore, the density requirements of the microstructure of pores vary depending on the temperature environment.
[0004] Therefore, how to provide a method for controlling porous metal microstructures, rationally controlling the pore size and pore change gradient according to the needs of the components, while shortening the manufacturing cycle, reducing manufacturing costs, and improving the yield, has become an urgent problem that needs to be solved by those skilled in the art. Summary of the Invention
[0005] The purpose of this invention is to provide a method, device, equipment and medium for controlling porous metal microstructures. The method can reasonably control the pore size and pore change gradient according to the needs of the components, while shortening the manufacturing cycle, reducing the manufacturing cost, and improving the yield, which is conducive to large-scale promotion and application.
[0006] To achieve this objective, the present invention adopts the following technical solution:
[0007] In a first aspect, the present invention provides a method for controlling porous metal microstructures. The method employs electron beam 3D printing technology and controls the pore size and pore size gradient during the porous metal forming process through the design of control logic. Specifically, it includes the following steps:
[0008] S101. Process testing was conducted using metal powder;
[0009] S102. Determine the process reference parameters for the control logic;
[0010] S103. Perform model analysis on porous metals;
[0011] S104. Import the baseline parameters and model information into the control logic to perform strategy formula calculations;
[0012] S105. Output strategy control scheme and perform additive manufacturing.
[0013] In this invention, the electron beam 3D printing technology uses a high-energy electron beam as a heat source to selectively melt metal powder in a vacuum environment. This process is repeated layer by layer to finally produce an integrated porous metal part. As long as the purpose of electron beam 3D printing can be achieved, no specific printing conditions are required.
[0014] The method provided by this invention achieves effective and controllable gradient adjustment of porous metal microstructures through reasonable design of control logic. Under the same porous metal parts, compared with the traditional method which has a production cycle of more than 7 months, this invention only requires less than 8 days. At the same time, the production cost is significantly reduced, the yield rate is increased sharply from the traditional 10-20% to more than 90%, and the size of the obtained porous metal parts can be adjusted within a large range, which is conducive to large-scale promotion and application.
[0015] Preferably, the metal powder in step S101 includes pure tungsten powder or tungsten alloy powder.
[0016] Preferably, the spheroidization rate of the metal powder in step (1) is ≥99%, for example, it can be 99%, 99.1%, 99.2%, 99.3%, 99.4%, 99.5%, 99.6%, 99.7%, 99.8% or 99.9%, but it is not limited to the listed values. Other unlisted values within this range are also applicable.
[0017] Preferably, the Hall flow rate of the metal powder in step (1) is ≤6s / 50g, for example, it can be 0.5s / 50g, 1s / 50g, 1.5s / 50g, 2s / 50g, 2.5s / 50g, 3s / 50g, 3.5s / 50g, 4s / 50g, 4.5s / 50g, 5s / 50g, 5.5s / 50g or 6s / 50g, but it is not limited to the listed values. Other unlisted values within this range are also applicable.
[0018] Preferably, the loose packing density of the metal powder in step (1) is ≤13 g / cm³. 3 For example, it could be 1g / cm 3 2g / cm 3 3g / cm 3 4g / cm 3 5g / cm 3 6g / cm 3 7g / cm 3 8g / cm 39g / cm 3 10g / cm 3 11g / cm 3 12g / cm 3 Or 13g / cm 3 However, this does not apply to all values listed; other unlisted values within the same range also apply.
[0019] Preferably, the process reference parameters in step S102 include reference powder bed area, reference filling cross-sectional area, reference dense sample average beam current value, reference porous average current value, dense sample density, and porous microstructure density.
[0020] Preferably, the method for determining the process reference parameters in step S102 includes any one of the following: the model cross-sectional area median value method, the model cross-sectional area average value method, or the model cross-sectional area stable structure method, and more preferably the model cross-sectional area median value method.
[0021] Preferably, the model cross-sectional area median method uses the median position of the cross-sectional area of the model sliced along the Z direction to develop process reference parameters.
[0022] Preferably, the model analysis in step S103 includes slicing the model to transform the three-dimensional model into a two-dimensional cross-section.
[0023] Preferably, the analysis objects of the model analysis in step S103 include the model height, the fill cross-sectional area corresponding to different model heights, and the model microstructure requirements.
[0024] Preferably, the calculation objects of the strategy formula in step S104 include the actual powder preheating cross-sectional area, the average current of the powder bed cross-section, the average current change value of pore size and density changes, the average current coefficient corresponding to pore density changes, the average current change value corresponding to the target pore, and the average current corresponding to the target pore.
[0025] Preferably, the output items of the strategy control scheme in step S105 include model height, model cross-sectional area, target powder bed cross-sectional area, and average current corresponding to the target pores.
[0026] In a second aspect, the present invention provides a control device for porous metal microstructures, the device comprising:
[0027] The process testing module is used to conduct process tests using metal powder.
[0028] The process reference parameter determination module is used to determine the process reference parameters for the control logic.
[0029] The model analysis module is used for model analysis of porous metals;
[0030] The strategy formula calculation module is used to import benchmark parameters and model information into the control logic for strategy formula calculation;
[0031] The strategy control scheme output module is used to output the strategy control scheme and perform additive manufacturing.
[0032] Thirdly, the present invention provides an electronic device, the electronic device comprising:
[0033] At least one processor; and
[0034] A memory communicatively connected to the at least one processor; wherein,
[0035] The memory stores a computer program that can be executed by the at least one processor to enable the at least one processor to perform the control method for the porous metal microstructure described in the first aspect.
[0036] Fourthly, the present invention provides a computer-readable storage medium storing computer instructions for causing a processor to execute and implement the control method for the porous metal microstructure described in the first aspect.
[0037] Compared with the prior art, the present invention has the following beneficial effects:
[0038] The method provided by this invention achieves effective and controllable gradient adjustment of porous metal microstructures through reasonable design of control logic. Under the same porous metal parts, compared with the traditional method which has a production cycle of more than 7 months, this invention only requires less than 8 days. At the same time, the production cost is significantly reduced, the yield rate is increased sharply from the traditional 10-20% to more than 90%, and the size of the obtained porous metal parts can be adjusted within a large range, which is conducive to large-scale promotion and application. Attached Figure Description
[0039] Figure 1 This is a flowchart of the control method for porous tungsten alloy microstructures provided in Example 1;
[0040] Figure 2 This is a schematic diagram of the forming model in the control method provided in Example 1;
[0041] Figure 3 This is a diagram illustrating the changing requirements of the micropore structure of the forming model in the control method provided in Example 1;
[0042] Figure 4 This is a schematic diagram showing the cross-sectional area change of the forming model with height in the control method provided in Example 1;
[0043] Figure 5This is a diagram showing the changes in the microstructure of the forming model in the control method provided in Example 1;
[0044] Figure 6 This is a photograph of a porous tungsten alloy (right) obtained by controlling the porous structure of a dense tungsten alloy (left) in the control method provided in Example 1.
[0045] Figure 7 This is a schematic diagram of the intermediate value height cross-sectional area in the control method provided in Example 1;
[0046] Figure 8 This is a schematic diagram of the control device for the porous metal microstructure provided in Example 2;
[0047] Figure 9 This is a schematic diagram of the electronic device structure provided in Example 3 for implementing the control method of porous tungsten alloy microstructure. Detailed Implementation
[0048] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.
[0049] Example 1
[0050] This embodiment provides a method for controlling porous tungsten alloy microstructures. The method employs electron beam 3D printing technology and designs control logic to control the pore size and pore size variation gradient during the porous tungsten alloy forming process. Figure 1 As shown, the specific steps include:
[0051] S101. Process testing was conducted using tungsten alloy powder;
[0052] S102. Determine the process reference parameters for the control logic;
[0053] S103. Perform model analysis on porous metals;
[0054] S104. Import the baseline parameters and model information into the control logic to perform strategy formula calculations;
[0055] S105. Output strategy control scheme and perform additive manufacturing.
[0056] In step S101, the composition of impurity elements in the tungsten alloy powder is shown in Table 1 below.
[0057] Table 1
[0058] element O C S Fe Al Si Mg Ca Content (ppm) 8 5 2 30 5 7 5 5 element Ni Cr Co Mo As Ti V Cu Content (ppm) 5 5 1 20 10 5 5 1 element Mn Sb Sn Bi Cd Pb K Na Content (ppm) 5 2 1 1 1 1 9 3
[0059] The tungsten alloy powder has a spheroidization rate of 99.5%, a Hall flow rate of 5.2 s / 50 g, and a loose packing density of 11.7 g / cm³. 3 .
[0060] In step S102, the method for determining the process reference parameters is the model cross-sectional area median method, that is, the process reference parameters are developed using the median position of the cross-sectional area of the model sliced along the Z direction. For details, please refer to [reference needed]. Figure 2-7 .
[0061] Figure 2 This is a schematic diagram of the forming model; Figure 3 The diagram shows the changes in the micropore structure of the forming model, and in Figure 3 In the diagram, the colors, from dark to light and then back to dark, represent the distribution of dense, porous, and dense microstructures, respectively.
[0062] Figure 4 This is a schematic diagram showing the change in cross-sectional area of the formed model as the height changes, with the black dots representing the intermediate values.
[0063] Figure 5 This is a diagram showing the changes in the microstructure of the formed model, with the black line representing the intermediate cross-sectional position.
[0064] Figure 6 A photograph of a porous tungsten alloy (right) obtained by controlling the porous structure of a dense tungsten alloy (left), with the tungsten alloy having dimensions of 10mm×10mm×10mm.
[0065] Figure 7 This is a schematic diagram of the cross-sectional area at the intermediate height, where the light-colored area represents the powder bed area and the dark-colored area represents the filling cross-sectional area.
[0066] In step S102, the reference parameters are output:
[0067] ① Reference powder bed area (e.g.) Figure 7 (the light-colored area in the middle);
[0068] ② Reference fill cross-sectional area (e.g.) Figure 7 (dark areas in the middle);
[0069] ③ Dense sample: Average beam current value (process parameter) of the reference dense sample;
[0070] ④ Porous microstructure samples: average current value of reference porous samples (process parameters);
[0071] ⑤ Dense sample: The density of the dense sample is 19.3 g / cm³. 3 (Sample sampling and testing);
[0072] ⑥ Porous microstructure samples: density of porous microstructure (tested from sample);
[0073] The average current is calculated as follows: (preheating beam current × preheating time + filling beam current × filling time) ÷ printing time per layer.
[0074] In step S103, since electron beam forming is a layer-by-layer stacking process, the model needs to be sliced to convert the three-dimensional model into a two-dimensional cross-section, and information data is output based on the model information.
[0075] In step S103, the basic parameters are output:
[0076] ① Model height;
[0077] ② The infill cross-sectional area corresponding to different heights of the model;
[0078] ③ Model microstructure requirements.
[0079] In step S104, based on the microstructure adjustment requirements of porous tungsten alloys, and building upon electron beam additive manufacturing, the reliability of the formula was verified through numerous experiments, and large-size porous tungsten alloy parts were successfully printed. For parts of the same height, the following strategy was employed:
[0080] 1) Actual powder preheating cross-sectional area = reference preheating area ÷ reference filling cross-sectional area × cross-sectional area corresponding to the model (import);
[0081] 2) Average current across powder bed cross section = average current of reference dense powder bed ÷ cross-sectional area of reference powder bed × actual preheated cross-sectional area of powder bed (import);
[0082] 3) Average current change (rated height) due to changes in pore size and density = Average current of reference dense sample - Average current of reference porous sample;
[0083] 4) Average current coefficient corresponding to pore density change = Average current change value ÷ (Density of reference dense sample - Density of reference porous sample);
[0084] 5) The average current change corresponding to the target pore size = the average current coefficient corresponding to the pore density change × (the density of the reference dense sample - the actual required density);
[0085] 6) Average current corresponding to the target pore = Average current of powder bed cross section - Change in average current corresponding to the target pore.
[0086] In step S105, after determining the same height, the data for different heights are calculated and summarized to finally form a printing strategy scheme, as shown in Table 2 below:
[0087] Table 2
[0088]
[0089] The system process plan is formulated based on Table 2 above, as shown in Table 3 below.
[0090] Table 3
[0091]
[0092] This embodiment ultimately yields a control strategy for porous tungsten alloy microstructures that adjusts the powder bed preheating area and average printing current along the height direction, taking into account variations in height, cross-sectional area, and microstructure requirements. This control method has the following characteristics:
[0093] 1) It can be matched and coordinated with changes in forming height;
[0094] 2) It can control the changes in pore microstructure within different height ranges by adjusting the rated height step or by designing a separate height range;
[0095] 3) It can adjust the distribution density of pore microstructures by changing the average current;
[0096] 4) It can summarize the data along the height direction of the entire model to form a strategy system for controlling the microstructure of the overall model along the height direction;
[0097] 5) It maps complex models to microstructure requirements and process parameters one by one, realizing logical relationships, and can directly control the microstructure through parameter adjustment;
[0098] 6) For the first time, the preheating area of the powder bed is adjusted in real time and matched with the process parameters. By adjusting the cross-sectional area of the powder bed, the overall forming environment temperature is kept stable, and the filling cross-sectional area is changed.
[0099] Therefore, the method provided in this embodiment achieves effective and controllable gradient adjustment of porous metal microstructures through reasonable design of control logic. Under the same porous metal parts, compared with the traditional method which has a production cycle of more than 7 months, this embodiment only requires less than 8 days. At the same time, the production cost is significantly reduced, the yield rate is increased sharply from the traditional 10-20% to more than 90%, and the size of the obtained porous metal parts can be adjusted within a large range, which is conducive to large-scale promotion and application.
[0100] Example 2
[0101] This embodiment provides a control device for porous metal microstructures, such as... Figure 8 As shown, the device includes: a process testing module 101, a process baseline parameter determination module 102, a model analysis module 103, a strategy formula calculation module 104, and a strategy control scheme output module 105. Wherein:
[0102] Process testing module 101 is used to conduct process tests using metal powder;
[0103] The process reference parameter determination module 102 is used to determine the process reference parameters of the control logic;
[0104] Model analysis module 103 is used for model analysis of porous metals;
[0105] The strategy formula calculation module 104 is used to import the benchmark parameters and model information into the control logic for strategy formula calculation.
[0106] The strategy control scheme output module 105 is used to output the strategy control scheme and perform additive manufacturing.
[0107] In process testing module 101, the metal powder includes pure tungsten powder or tungsten alloy powder, and the spheroidization rate of the metal powder is ≥99%, the Hall flow rate is ≤6s / 50g, and the loose packing density is ≤13g / cm³. 3 .
[0108] In the process reference parameter determination module 102, the process reference parameters include reference powder bed area, reference filling cross-sectional area, reference dense sample average beam current value, reference porous average current value, dense sample density, and porous microstructure density. The process reference parameters are determined by using the model cross-sectional area median method, that is, the process reference parameters are developed by using the median position of the cross-sectional area of the model sliced along the Z direction.
[0109] In the model analysis module 103, the model analysis includes slicing the model to transform the three-dimensional model into a two-dimensional cross-section, and the analysis objects include the model height, the filling cross-sectional area corresponding to different model heights, and the model microstructure requirements.
[0110] In the strategy formula calculation module 104, the calculation objects of the strategy formula calculation include the actual powder preheating cross-sectional area, the average current of the powder bed cross-section, the average current change value of pore size and density changes, the average current coefficient corresponding to pore density changes, the average current change value corresponding to the target pore, and the average current corresponding to the target pore.
[0111] In the strategy control scheme output module 105, the output items of the strategy control scheme include model height, model cross-sectional area, target powder bed cross-sectional area, and average current corresponding to the target pores.
[0112] The device provided in this embodiment can execute the control method for porous metal microstructures provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the method.
[0113] Example 3
[0114] This embodiment provides an electronic device for implementing a control method for porous metal microstructures, such as... Figure 9As shown, this electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. This electronic device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices (such as helmets, glasses, watches, etc.), and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the present application described and / or claimed herein.
[0115] like Figure 9 As shown, the electronic device 10 includes at least one processor 11 and a memory, such as a read-only memory (ROM) 12 or a random access memory (RAM) 13, communicatively connected to the at least one processor 11. The memory stores computer programs executable by the at least one processor. The processor 11 can perform various appropriate actions and processes based on the computer program stored in the ROM 12 or loaded from storage unit 18 into the RAM 13. The RAM 13 may also store various programs and data required for the operation of the electronic device 10. The processor 11, ROM 12, and RAM 13 are interconnected via a bus 14. An input / output (I / O) interface 15 is also connected to the bus 14.
[0116] Multiple components in electronic device 10 are connected to I / O interface 15, including: input unit 16, such as keyboard, mouse, etc.; output unit 17, such as various types of displays, speakers, etc.; storage unit 18, such as secondary storage area, optical disc, etc.; and communication unit 19, such as network card, modem, wireless transceiver, etc. Communication unit 19 allows electronic device 10 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.
[0117] Processor 11 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. Processor 11 performs the various methods and processes described above, such as the control methods for porous metal microstructures.
[0118] In some embodiments, the control method for porous metal microstructures may be implemented as a computer program tangibly contained in a computer-readable storage medium, such as storage unit 18. In some embodiments, part or all of the computer program may be loaded and / or mounted on electronic device 10 via ROM 12 and / or communication unit 19. When the computer program is loaded into RAM 13 and executed by processor 11, one or more steps of the control method for porous metal microstructures described above may be performed. Alternatively, in other embodiments, processor 11 may be configured to perform the control method for porous metal microstructures by any other suitable means (e.g., by means of firmware).
[0119] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload-programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.
[0120] Computer programs used to implement the methods of this application may be written in any combination of one or more programming languages. These computer programs may be provided to the processor of a general-purpose computer, a special-purpose computer, or other programmable target-determining device, such that when executed by the processor, the computer programs cause the functions / operations specified in the flowcharts and / or block diagrams to be implemented. The computer programs may be executed entirely on a machine, partially on a machine, or as a standalone software package, partially on a machine and partially on a remote machine, or entirely on a remote machine or server.
[0121] In the context of this application, a computer-readable storage medium can be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, apparatus, or device. A computer-readable storage medium can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium can be a machine-readable signal medium. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.
[0122] To provide interaction with a user, the systems and techniques described herein can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the electronic device. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).
[0123] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as data servers), or computing systems that include middleware components (e.g., application servers), or computing systems that include frontend components (e.g., user computers with graphical user interfaces or web browsers through which users can interact with implementations of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., communication networks). Examples of communication networks include local area networks (LANs), wide area networks (WANs), blockchain networks, and the Internet.
[0124] A computing system can include clients and servers. Clients and servers are generally located far apart and typically interact through communication networks. The client-server relationship is created by computer programs running on the respective computers and having a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or cloud host, which is a hosting product within the cloud computing service system to address the shortcomings of traditional physical hosts and VPS services, such as high management difficulty and weak business scalability.
[0125] It should be understood that the various forms of processes shown above can be used to rearrange, add, or delete steps. For example, the steps described in this application can be executed in parallel, sequentially, or in different orders, as long as the desired information of the technical solution of this application can be achieved, and this is not limited herein.
[0126] The applicant declares that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.
Claims
1. A method for controlling porous metal microstructures, characterized in that, The control method employs electron beam 3D printing technology and designs control logic to control the pore size and pore density variation gradient during the porous metal forming process. Specifically, it includes the following steps: S101. Process testing was conducted using metal powder; S102. Determine the process reference parameters for the control logic; the process reference parameters include the reference powder bed area, the reference model cross-sectional area, the reference dense sample average beam current value, the reference porous sample average current value, the reference dense sample density, and the reference porous sample density; S103. Perform model analysis on porous metals; the analysis objects of the model analysis include model height, model cross-sectional area corresponding to different model heights, and model microstructure requirements; S104. Import the reference parameters and model information into the control logic to perform strategy formula calculation; the calculation objects of the strategy formula calculation include the actual powder preheating cross-sectional area, the average current of the powder bed cross-section, the average current change value of the pore size and pore density changes, the average current coefficient corresponding to the pore density change, the average current change value corresponding to the target pore, and the average current corresponding to the target pore. Actual powder preheating cross-sectional area = reference preheating area ÷ reference model cross-sectional area × model cross-sectional area; Average current across powder bed cross section = Average beam current of reference dense sample ÷ Area of reference powder bed × Preheated cross section of actual powder bed; Average current change due to variations in pore size and density = Average beam current of reference dense sample - Average current of reference porous sample; The average current coefficient corresponding to the change in pore density = the average current change value ÷ (the density of the reference dense sample - the density of the reference porous sample). The average current change corresponding to the target pore size = the average current coefficient corresponding to the pore density change × (the density of the benchmark dense sample - the required density of the actual model microstructure). Average current corresponding to the target pores = Average current of the powder bed cross section - Change in average current corresponding to the target pores; S105. Output strategy control scheme and perform additive manufacturing; the output items of the strategy control scheme include model height, model cross-sectional area, actual powder preheating cross-sectional area and average current corresponding to target pore size.
2. The control method according to claim 1, characterized in that, The metal powder mentioned in step S101 includes pure tungsten powder or tungsten alloy powder.
3. The control method according to claim 2, characterized in that, The spheroidization rate of the metal powder described in S101 is ≥99%.
4. The control method according to claim 2, characterized in that, The Hall flow rate of the metal powder described in S101 is ≤6s / 50g.
5. The control method according to claim 2, characterized in that, The loose bulk density of the metal powder described in S101 is ≤13 g / cm³. 3 .
6. The control method according to claim 1, characterized in that, The method for determining the process reference parameters in step S102 includes any one of the following: the intermediate value method of model cross-sectional area, the average value method of model cross-sectional area, or the stable structure method of model cross-sectional area.
7. The control method according to claim 1, characterized in that, The method for determining the process reference parameters in step S102 is the intermediate value method of model cross-sectional area.
8. The control method according to claim 6, characterized in that, The model cross-sectional area median method uses the median position of the cross-sectional area of the model sliced along the Z direction to develop process reference parameters.
9. The control method according to claim 1, characterized in that, The model analysis in step S103 includes slicing the model to transform the three-dimensional model into a two-dimensional cross-section.
10. A control device for obtaining porous metal microstructures by the control method according to any one of claims 1-9, characterized in that, The device includes: The process testing module is used to conduct process tests using metal powder. The process reference parameter determination module is used to determine the process reference parameters for the control logic. The model analysis module is used for model analysis of porous metals; The strategy formula calculation module is used to import benchmark parameters and model information into the control logic for strategy formula calculation; The strategy control scheme output module is used to output the strategy control scheme and perform additive manufacturing.
11. An electronic device, characterized in that, The electronic device includes: At least one processor; and A memory communicatively connected to the at least one processor; wherein, The memory stores a computer program that can be executed by the at least one processor to enable the at least one processor to perform the control method for the porous metal microstructure according to any one of claims 1-9.
12. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer instructions that are used to cause a processor to execute the control method for the porous metal microstructure according to any one of claims 1-9.