An ultrasonic field, temperature field and chemical field synergistic assisted silicon wafer cutting, grinding and polishing integrated equipment

Abstract

This invention relates to an integrated silicon wafer cutting, grinding, and polishing equipment assisted by ultrasonic, temperature, and chemical fields. The equipment includes a frame, a silicon wafer transfer device, a cutting module, a grinding module, a rough polishing module, a fine polishing module, and a control system. The cutting, grinding, rough polishing, and fine polishing modules are arranged in an upstream-downstream relationship, with adjacent modules connected by the silicon wafer transfer device. The cutting module contains multiple sets of multi-energy field assisted cutting machines arranged side-by-side; the grinding module contains multiple sets of multi-field assisted grinding machines arranged side-by-side; the rough polishing module contains multiple sets of multi-energy field assisted rough polishing machines arranged side-by-side; and the fine polishing module contains multiple sets of multi-energy field assisted fine polishing machines arranged side-by-side. All modules—cutting, grinding, rough polishing, and fine polishing—are equipped with ultrasonic, temperature, and chemical field auxiliary devices. This invention enables the completion of silicon ingot processing from rod to wafer and from rough to fine on the same equipment, avoiding losses and secondary damage caused by excessive product transfer.

Description

Technical Field

[0001] This invention relates to the field of silicon wafer processing technology, and more particularly to an integrated equipment for cutting, grinding and polishing silicon wafers with the synergistic assistance of ultrasonic field, temperature field and chemical field. Background Technology

[0002] Silicon wafers possess semiconductor properties that enable them to be used as materials for integrated circuits, allowing for the fabrication of electronic components on chips through microfabrication and doping techniques. Silicon wafers are also used in the manufacture of solar panels. Their photoelectric properties allow them to convert sunlight energy into electrical energy, making them widely used in the solar energy industry. In the optoelectronic field, silicon wafers can also be used to manufacture optoelectronic components such as light-emitting diodes (LEDs) and photodiodes (PDs), which are widely used in communications, sensing, and other fields. Furthermore, the high specific surface area, high conductivity, and low electrolyte permeability of silicon wafers make them an ideal anode material for lithium-ion batteries, offering advantages such as high energy density and long cycle life. In summary, silicon wafers, as semiconductor materials, have wide applications in electronics, optoelectronics, and energy. With technological advancements and increasing demand, the application scope of silicon wafers will gradually expand. However, these applications place extremely high demands on the surface quality of silicon wafers. In the industrial manufacturing process of silicon wafers, cutting, grinding, and polishing are crucial processes in silicon wafer component processing; only through these processing steps can silicon wafers meet the requirements for high-quality surfaces.

[0003] Traditional silicon wafer cutting, grinding, and polishing are performed using different equipment. Because silicon wafers are hard and brittle, external forces easily damage their surface. The need for cross-distance transfer between different processing steps not only damages the product surface but also results in low processing efficiency and poor surface quality. Furthermore, traditional silicon wafer cutting, grinding, and polishing processes are almost entirely mechanical stress processing, which also leads to thicker surface damage layers and lower processing efficiency. Ultrasonic and temperature field-assisted technologies can effectively improve the quality and efficiency of silicon wafer processing, but there are currently no reports of multi-field assisted technologies being applied to high-quality, high-efficiency integrated cutting, grinding, and polishing equipment for silicon ingots. Therefore, this invention proposes a silicon ingot cutting, grinding, and polishing processing equipment assisted by ultrasonic fields, temperature fields, and chemical fields—a multi-energy field synergistic assisted integrated silicon wafer cutting, grinding, and polishing equipment. Summary of the Invention

[0004] To address the aforementioned technical issues, an integrated equipment for cutting, grinding, and polishing silicon wafers using synergistic assistance of ultrasonic, temperature, and chemical fields is provided.

[0005] The technical means employed in this invention are as follows:

[0006] An integrated silicon wafer cutting, grinding, and polishing equipment assisted by ultrasonic, temperature, and chemical fields includes: a frame, a silicon wafer transfer device, a cutting module, a grinding module, a rough polishing module, a fine polishing module, and a control system. The frame is internally arranged with the cutting, grinding, rough polishing, and fine polishing modules arranged in an upstream-downstream relationship. Adjacent modules are connected by the silicon wafer transfer device to transfer the processed material from each module. The cutting module contains multiple sets of multi-energy field assisted cutting machines arranged side-by-side, with a silicon wafer transfer device positioned between every two sets of cutting machines. The ground rail of this silicon wafer transfer device extends to the grinding module. Multiple sets of multi-field auxiliary polishing machines are arranged side by side, and a silicon wafer transfer device is also set behind each polishing machine. Each ground rail extends to the coarse polishing module. Multiple sets of multi-energy field auxiliary coarse polishing machines are arranged side by side in the coarse polishing module. A silicon wafer transfer device is set between every two sets of coarse polishing machines. Each ground rail extends to the fine polishing module. Multiple sets of multi-energy field auxiliary fine polishing machines are arranged side by side in the fine polishing module. The cutting module, polishing module, coarse polishing module and fine polishing module are all designed with ultrasonic field, temperature field and chemical field auxiliary devices. The silicon wafer transfer device, cutting module, polishing module, coarse polishing module and fine polishing module are integrated and controlled by the control system.

[0007] Furthermore, the silicon wafer transfer device includes a ground rail, a robotic arm, a vacuum pump, and a vacuum suction cup. The ground rail is fixed to the ground, the robotic arm is mounted on the ground rail and can move along the ground rail, the vacuum pump is connected to the vacuum suction cup through a pipeline, and the vacuum suction cup is fixed on the end shaft of the robotic arm. The vacuum suction cup and the ground rail robotic arm are used to pick up and transfer silicon wafers.

[0008] Furthermore, the cutting module includes a cutting machine frame, a liquid collection tank, a base, a lead screw, a worktable, a moving box, an ultrasonic vibration device, tensioning rollers, diamond cutting wire, a liquid delivery system, a temperature control cover, a temperature controller, a silicon wafer, a U-shaped clamp, and a clamp track. The liquid collection tank is installed at the bottom. The lead screw is installed between the frame base and the worktable to raise and lower the worktable, thereby controlling the cutting depth. The moving box is connected to the lead screw on the worktable to move back and forth. The ultrasonic vibration device, including an ultrasonic generator and an ultrasonic transducer, is installed on the moving box. Several tensioning rollers are installed on the cutting machine frame, and the diamond cutting wire is wound around each tensioning roller. The liquid delivery system includes a water pump. The cutting fluid is fed into the collection tank through the hose and then output above the silicon wafer through the universal tube. The temperature control cover is installed on the frame, and the temperature controller is installed on the top of the cutting machine. The moving box, ultrasonic vibration device, tensioning wheel, diamond cutting wire, fluid delivery universal tube, and temperature controller are all placed inside the temperature control cover. The U-shaped clamp track is installed on the ultrasonic vibration device. The U-shaped clamp moves to clamp and relax through the track. The U-shaped clamp is driven by a power source. The ultrasonic vibration device realizes ultrasonic vibration of the silicon crystal rod during the cutting process. The temperature controller adjusts the cutting environment temperature. Then, by delivering chemical cutting fluid, the cutting is assisted by multiple fields of ultrasonic field, temperature field, and chemical field.

[0009] Furthermore, the grinding module includes a base, gears, a spindle support moving track, a spindle retainer plate, a fixture track, a U-shaped clamp, a silicon wafer, a fixture track frame, an ultrasonic spindle, a heating plate, a grinding disc, a force gauge, a lead screw, a worktable, a liquid delivery device, and a liquid collection tank. The grinding action devices are respectively located on both sides of the silicon wafer. Specifically, the gear is mounted on the ultrasonic spindle, and the output end of the motor meshes with the gear, controlling the rotation of the ultrasonic spindle via the motor. The grinding action devices on both sides share a single motor. Two spindle support moving tracks are provided on each side, for a total of four tracks, symmetrically mounted in pairs on the base. Two ultrasonic spindle retainer plates are provided at the front and rear, connected to the ultrasonic spindle and mounted on the spindle support moving track, working together to maintain the radial stability of the ultrasonic spindle. The ultrasonic spindle is mounted on the spindle retainer plate via bearings. The fixture tracks are mounted on the fixture track frame and the base, symmetrically arranged left and right, with two fixture track frames symmetrically installed. On the left and right sides of the base, U-shaped clamps are installed on clamp tracks, which clamp and relax the silicon wafer by moving. Heating plates are distributed on the front and back sides of the silicon wafer. One side is connected to the ultrasonic spindle and rotates with the spindle. The other side is installed on a force gauge connected to the ultrasonic spindle and also rotates with the ultrasonic spindle. The force gauge is connected to the ultrasonic spindle and controls the grinding load. The grinding disc is installed on the heating plates on both sides of the silicon wafer. The worktable is connected to the base through a lead screw. The liquid delivery device includes a peristaltic pump, a suction tube, and a drip tube. The liquid collection tank is installed on the base. During the grinding process, the U-shaped clamps move left and right to achieve slight left and right movements of the silicon wafer, so as to achieve more uniform grinding of the silicon wafer. The ultrasonic spindle realizes the ultrasonic vibration of the grinding disc. The heating plates control the temperature of the grinding disc. The grinding liquid is then added by the liquid delivery device, so as to realize the multi-field synergistic assistance of ultrasonic field, temperature field and chemical field in grinding the silicon wafer.

[0010] Furthermore, the coarse polishing module includes a base, gears, a spindle frame moving track, a spindle retainer plate, a fixture track, a U-shaped clamp, a silicon wafer, a fixture track frame, an ultrasonic spindle, a heating plate, a coarse polishing disc with a coarse polishing pad, a force gauge, a lead screw, a worktable, a liquid delivery device, and a liquid collection tank. The coarse polishing action devices are respectively located on both sides of the silicon wafer. Specifically, the gear is mounted on the ultrasonic spindle, and the output end of the motor meshes with the gear, controlling the rotation of the ultrasonic spindle via the motor. The coarse polishing action devices on both sides share a single motor. Two spindle frame moving tracks are provided on each side, for a total of four tracks, symmetrically mounted in pairs on the base. Two ultrasonic spindle retainer plates are provided at the front and rear, connected to the ultrasonic spindle and mounted on the spindle frame moving track, collaboratively maintaining the radial stability of the ultrasonic spindle. The ultrasonic spindle is mounted on the spindle retainer plate via bearings. The fixture tracks are mounted on the fixture track frame and the base, symmetrically arranged left and right, with the two fixture track frames symmetrical. Installed on the left and right sides of the base, the U-shaped clamps are mounted on the clamping track, and the silicon wafer is clamped and relaxed by movement. Heating plates are distributed on the front and rear sides of the silicon wafer. One side is connected to the ultrasonic spindle and rotates with the spindle. The other side is mounted on a force gauge connected to the ultrasonic spindle and also rotates with the ultrasonic spindle. The force gauge is connected to the ultrasonic spindle and controls the grinding load. The grinding disc is mounted on the heating plates on both sides of the silicon wafer. The worktable is connected to the base through a lead screw. The liquid delivery device includes a peristaltic pump, a suction pipe, and a drip pipe. The liquid collection tank is mounted on the base. During the rough polishing process, the silicon wafer is moved left and right by the U-shaped clamps to achieve small left and right movements, so as to achieve more uniform rough polishing of the silicon wafer. The ultrasonic spindle realizes the ultrasonic vibration of the rough polishing disc. The temperature of the rough polishing disc is controlled by the heating plates. Then, the grinding liquid is dripped by the liquid delivery device to realize the rough polishing of the silicon wafer under the synergistic assistance of multiple fields such as ultrasonic field, temperature field and chemical field.

[0011] Furthermore, the fine polishing module includes a base, gears, a spindle frame moving track, a spindle retainer plate, a fixture track, a U-shaped clamp, a silicon wafer, a fixture track frame, an ultrasonic spindle, a heating plate, a fine polishing disc with a fine polishing pad, a force gauge, a lead screw, a worktable, a liquid delivery device, and a liquid collection tank. The fine polishing action devices are respectively located on both sides of the silicon wafer. Specifically, the gear is mounted on the ultrasonic spindle, and the output end of the motor meshes with the gear, controlling the rotation of the ultrasonic spindle via the motor. The fine polishing action devices on both sides share a single motor. Two spindle frame moving tracks are provided on each side, for a total of four tracks, symmetrically mounted in pairs on the base. Two ultrasonic spindle retainer plates are provided at the front and rear, connected to the ultrasonic spindle and mounted on the spindle frame moving track, collaboratively maintaining the radial stability of the ultrasonic spindle. The ultrasonic spindle is mounted on the spindle retainer plate via bearings. The fixture tracks are mounted on the fixture track frame and the base, symmetrically arranged left and right, with the two fixture track frames symmetrical. Installed on the left and right sides of the base, the U-shaped clamps are mounted on the clamping track, and the silicon wafer is clamped and relaxed by movement. Heating plates are distributed on the front and rear sides of the silicon wafer. One side is connected to the ultrasonic spindle and rotates with the spindle. The other side is mounted on a force gauge connected to the ultrasonic spindle and also rotates with the ultrasonic spindle. The force gauge is connected to the ultrasonic spindle and can control the grinding load. The grinding disc is mounted on the heating plates on both sides of the silicon wafer. The worktable is connected to the base through a lead screw. The liquid delivery device includes a peristaltic pump, a suction pipe, and a drip pipe. The liquid collection tank is mounted on the base. During the rough polishing process, the silicon wafer is moved left and right by the U-shaped clamps to achieve small left and right movements, so as to achieve more uniform rough polishing of the silicon wafer. The ultrasonic spindle realizes the ultrasonic vibration of the rough polishing disc. The temperature of the rough polishing disc is controlled by the heating plates. Then, the grinding liquid is dripped by the liquid delivery device to achieve fine polishing of the silicon wafer under the synergistic assistance of multiple fields such as ultrasonic field, temperature field and chemical field.

[0012] Furthermore, the control system includes switches and an operation panel. Through the operation panel, precise transfer and fixed clamping of silicon wafers are achieved, the cutting speed and stroke are controlled, the load and rotation speed of grinding, rough polishing and fine polishing are controlled, the frequency and amplitude of the ultrasonic vibration device, the temperature of the temperature controller and the heating plate are controlled, and the dripping speed of the cutting fluid, grinding fluid, rough polishing fluid and fine polishing fluid are controlled, so as to realize the integrated processing of silicon wafer cutting, grinding and polishing under the synergistic assistance of multiple fields such as ultrasonic field, temperature field and chemical field.

[0013] Compared with the prior art, the present invention has the following advantages:

[0014] 1. This invention, through the design of cutting, grinding, rough polishing, and fine polishing modules, enables the completion of the silicon ingot processing from rod to wafer and from rough to fine on the same equipment. The complete processing technology avoids losses and secondary damage to the product caused by excessive product transfer.

[0015] 2. The control system designed in this invention integrates the control of multiple modules, achieving a high degree of automation and convenient control. It also saves time in transferring products between different processes in conventional manufacturing, thus reducing time costs.

[0016] 3. This invention, by designing a synergistic auxiliary processing of ultrasonic vibration, temperature field and chemical field, can not only improve the efficiency of silicon wafer processing, but also reduce the damage layer on the processing surface, thus achieving high-quality and high-efficiency cutting, grinding and polishing processing of silicon wafers. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a diagram showing the layout of the modules of the integrated cutting, grinding, and polishing equipment with multi-energy field collaborative assistance in an embodiment of the present invention.

[0019] Figure 2 This is a front view of the internal structure of the multi-energy field collaborative assisted cutting module in an embodiment of the present invention.

[0020] Figure 3 These are a top view (a) and an internal front view (b) of the multi-energy field assisted grinding module in an embodiment of the present invention.

[0021] Figure 4 These are a top view (a) and an internal front view (b) of the coarse polishing module with multi-energy field collaborative assistance in an embodiment of the present invention.

[0022] Figure 5 These are a top view (a) and an internal front view (b) of the fine polishing module with multi-energy field collaborative assistance in an embodiment of the present invention.

[0023] In the diagram: 1. Frame, 2. Silicon wafer transfer device, 3. Cutting module, 4. Grinding module, 5. Rough polishing module, 6. Fine polishing module, 7. Control system; 3-1. Cutting machine frame, 3-2. Liquid collection tank, 3-3. Base, 3-4. Lead screw, 3-5. Worktable, 3-6. Moving box, 3-7. Ultrasonic vibration device, 3-8. Tensioning wheel, 3-9. Diamond cutting wire, 3-10. Liquid delivery system, 3-11. Temperature control cover, 3-12. 3-13. Temperature controller; 3-14. Silicon wafer; 3-15. U-shaped clamp; 4-1. Clamp track; 4-1. Base; 4-2. Gear; 4-3. Spindle frame moving track; 4-4. Spindle retainer plate; 4-5. Clamp track; 4-6. U-shaped clamp; 4-7. Silicon wafer; 4-8. Clamp track frame; 4-9. Ultrasonic spindle; 4-10. Heating plate; 4-11. Grinding disc; 4-12. Force gauge; 4-13. Lead screw; 4-14. Tooling 4-15. Worktable; 4-16. Liquid delivery device; 5-1. Liquid collection tank; 5-2. Base; 5-3. Spindle support moving track; 5-4. Spindle retainer plate; 5-5. Fixture track; 5-6. U-shaped fixture; 5-7. Silicon wafer; 5-8. Fixture track frame; 5-9. Ultrasonic spindle; 5-10. Heating plate; 5-11. Rough polishing disc; 5-12. Force gauge; 5-13. Lead screw; 5-14. Worktable; 5-15. Liquid delivery device. Device, 5-16. Liquid collection tank; 6-1. Base, 6-2. Gear, 6-3. Spindle frame moving track, 6-4. Spindle retainer plate, 6-5. Fixture track, 6-6. U-shaped fixture, 6-7. Silicon wafer, 6-8. Fixture track frame, 6-9. Ultrasonic spindle, 6-10. Heating plate, 6-11. Grinding disc, 6-12. Force gauge, 6-13. Lead screw, 6-14. Worktable, 6-15. Liquid delivery device, 6-16. Liquid collection tank. Detailed Implementation

[0024] It should be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0025] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the present invention or its application or use. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0026] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of exemplary embodiments according to the invention. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0027] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps described in these embodiments do not limit the scope of the invention. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following figures denote similar items; therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0028] In the description of this invention, it should be understood that the orientation or positional relationship indicated by directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" is generally based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this invention and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this invention. The directional terms "inner" and "outer" refer to the inner and outer contours relative to the outline of each component itself.

[0029] For ease of description, spatial relative terms such as "above," "over," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation besides the orientation of the device as described in the figures. For example, if the device in the figures is inverted, a device described as "above" or "above" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0030] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore should not be construed as limiting the scope of protection of this invention.

[0031] like Figure 1-5 As shown in the figure, an embodiment of the present invention discloses an integrated equipment for cutting, grinding and polishing silicon wafers with the synergistic assistance of ultrasonic field, temperature field and chemical field, including: frame 1, silicon wafer transfer device 2, cutting module 3, grinding module 4, rough polishing module 5, fine polishing module 6 and control system 7. The internal arrangement of the frame 1 follows an upstream-downstream relationship between the cutting module 3, grinding module 4, rough polishing module 5, and fine polishing module 6. Adjacent modules are connected by silicon wafer transfer devices 2 to transfer the processed materials from each module. The cutting module 3 contains six sets of multi-energy field assisted cutting machines arranged side-by-side, with a silicon wafer transfer device 2 positioned between every two sets of cutting machines. The ground rail of this section of the silicon wafer transfer device 2 extends to the grinding module 4. The grinding module 4 contains three sets of multi-energy field assisted grinding machines arranged side-by-side, with a silicon wafer transfer device 2 also positioned after each grinding machine. Each ground rail of this grinding machine extends to the rough polishing module 5, which contains six sets of multi-energy field assisted rough polishing machines arranged side-by-side, with a silicon wafer transfer device 2 positioned between every two sets of rough polishing machines. Each ground rail of this rough polishing module extends to the fine polishing module 6, which contains six sets of multi-energy field assisted fine polishing machines arranged side-by-side. All the cutting, grinding, rough polishing, and fine polishing modules are equipped with ultrasonic, temperature, and chemical field auxiliary devices. The silicon wafer transfer device 2, the cutting module 3, the grinding module 4, the rough polishing module 5, and the fine polishing module 6 are integrated and controlled by the control system 7, which is located on the front frame 1 of the equipment.

[0032] The silicon wafer transfer device 2 includes a ground rail, a robotic arm, a vacuum pump, and vacuum suction cups. The ground rail is fixed to the ground, and the robotic arm is mounted on the ground rail and can move along the rail. Specifically, the movement of the robotic arm between adjacent modules can be accomplished by means of electricity or other methods. The vacuum pump is connected to the vacuum suction cups through pipelines, and the vacuum suction cups are fixed to the end shaft of the robotic arm. The silicon wafer transfer device 2 has three sets of vacuum suction cups between each pair of modules: the cutting module 3, the grinding module 4, the rough polishing module 5, and the fine polishing module 6. The silicon wafers can be picked up and transferred through the vacuum suction cups and the ground rail robotic arm. When the output / input height difference between each module is within a preset range, the robotic arm only needs to perform simple pick-up and transfer operations. If the output / input height difference between each module is too large, a robotic arm capable of high-degree-of-freedom rotation and height adjustment needs to be configured.

[0033] The cutting module 3 includes a cutting machine frame 3-1, a liquid collection tank 3-2, a base 3-3, a lead screw 3-4, a worktable 3-5, a moving box 3-6, an ultrasonic vibration device 3-7, a tensioning wheel 3-8, a diamond cutting wire 3-9, a liquid delivery system 3-10, a temperature control cover 3-11, a temperature controller 3-12, a silicon wafer 3-13, a U-shaped clamp 3-14, and a clamp track 3-15. The liquid collection tank 3-2 is installed at the bottom. The lead screw 3-4 is installed between the machine frame base 3-3 and the worktable 3-5, allowing the worktable 3-5 to be raised and lowered, thereby controlling the cutting depth. The moving box 3-6 is connected to the worktable 3-5 via a lead screw, allowing it to move back and forth. The ultrasonic vibration device 3-7 is installed on the moving box 3-6 and includes an ultrasonic generator and an ultrasonic transducer. Three tensioning rollers 3-8 are mounted in a triangular shape on the cutting machine frame 3-1, and the diamond cutting wire 3-9 is wound around the three tensioning rollers 3-8. The fluid delivery system 3-10 includes a water pump, hoses, and a universal joint. The cutting fluid is input from the collection tank 3-2 through the hoses and then output above the silicon wafer 3-13 through the universal joint. The temperature control cover 3-11 is mounted on the frame to reduce heat loss. The temperature controller 3-12 is mounted on the top of the cutting machine to control the temperature from top to bottom. The moving box 3-6, ultrasonic vibration device 3-7, tensioning rollers 3-8, diamond cutting wire 3-9, fluid delivery universal joint, and temperature controller 3-12 are all covered inside the temperature control cover. The U-shaped clamp track 3-15 is mounted on the ultrasonic vibration device 3-7, and the U-shaped clamp 3-14 moves to clamp and relax via the track. The U-shaped clamp 3-14 is driven by a power source. In some optional embodiments, a locking mechanism can be provided to lock the U-shaped clamp after the spacing is adjusted. The ultrasonic vibration device 3-7 enables ultrasonic vibration of the silicon ingot during the cutting process. The temperature controller 3-12 can adjust the cutting environment temperature. By delivering chemical cutting fluid, multi-field assisted cutting by ultrasonic, temperature, and chemical fields can be achieved. In this embodiment, the ultrasonic vibration device 3-7 adjusts the ultrasonic frequency to 10-50kHz and the amplitude to 5-15μm. The temperature controller 3-12 can adjust the cutting environment temperature to 10-50℃. Chemical cutting fluid is delivered at a rate of 30-200mL / min.

[0034] The grinding module 4 includes a base 4-1, a gear 4-2, a spindle frame moving track 4-3, a spindle retainer plate 4-4, a clamp track 4-5, a U-shaped clamp 4-6, a silicon wafer 4-7, a clamp track frame 4-8, an ultrasonic spindle 4-9, a heating plate 4-10, a grinding disc 4-11, a force gauge 4-12, a lead screw 4-13, a worktable 4-14, a liquid delivery device 4-15, and a liquid collection tank 4-16. The grinding action devices are respectively set on both sides of the silicon wafer. Specifically, gear 4-2 is mounted on the ultrasonic spindle 4-9, and the output end of the motor meshes with the gear. The motor controls the rotation of the ultrasonic spindle 4-9. The grinding action devices on both sides share a motor. Two spindle frame moving rails 4-3 are set on each side, for a total of four, and are symmetrically mounted on the base 4-1 in pairs. Two ultrasonic spindle retainer plates 4-4 are set at the front and back, connected to the ultrasonic spindle 4-9 and mounted on the spindle frame moving rails 4-3, working together to maintain the radial stability of the ultrasonic spindle 4-9. The ultrasonic spindle 4-9 is mounted on the spindle retainer plate 4-4 through bearings. The clamping rail 4-5 is mounted on the clamping rail frame 4-8 and the base 4-1, symmetrically arranged. Two clamping rail frames 4-8 are symmetrically mounted on the left and right sides of the base 4-1. The U-shaped clamp 4-6 is mounted on the clamping rail 4-5, and the silicon wafer 4-7 is clamped and relaxed by movement. Heating plates 4-10 are distributed on the front and rear sides of the silicon wafer 4-7. One side is connected to the ultrasonic spindle 4-9 and rotates with the spindle. The other side is mounted on a force gauge 4-12 connected to the ultrasonic spindle 4-9 and also rotates with the ultrasonic spindle 4-9. The force gauge 4-12 is connected to the ultrasonic spindle 4-9 and can control the grinding load. The grinding disc 4-11 is mounted on the heating plates 4-10 on both sides of the silicon wafer 4-7. The worktable 4-14 is connected to the base 4-1 via a lead screw 4-13. The liquid delivery device 4-15 includes a peristaltic pump, a suction pipe, and a drip pipe. The liquid collection tank 4-16 is mounted on the base 4-1. During the grinding process, the silicon wafer is moved slightly left and right by the U-shaped clamp 4-6, resulting in more uniform grinding of the silicon wafer 4-7. The ultrasonic spindle 4-9 enables ultrasonic vibration of the grinding disc, and the heating plates 4-10 control the temperature of the grinding disc. Then, polishing slurry is added dropwise through the liquid delivery device 4-15, enabling the synergistic polishing of silicon wafers using multiple fields: ultrasonic, temperature, and chemical. In this embodiment, the ultrasonic spindle 4-9 outputs an ultrasonic field with a frequency of 10–50 kHz and an amplitude of 0–10 μm. The heating plate 4-10 controls the temperature of the polishing disc at 20–100 °C, and the liquid delivery device 4-15 adds polishing slurry at a rate of 20–100 mL / min.

[0035] The rough polishing module 5 includes a base 5-1, a gear 5-2, a spindle frame moving track 5-3, a spindle retainer plate 5-4, a fixture track 5-5, a U-shaped fixture 5-6, a silicon wafer 5-7, a fixture track frame 5-8, an ultrasonic spindle 5-9, a heating plate 5-10, a rough polishing disc (with a rough polishing pad attached) 5-11, a force gauge 5-12, a lead screw 5-13, a worktable 5-14, a liquid delivery device 5-15, and a liquid collection tank 5-16. The coarse polishing devices are respectively set on both sides of the silicon wafer. Specifically, gear 5-2 is mounted on the ultrasonic spindle 5-9, and the output end of the motor meshes with the gear. The motor controls the rotation of the ultrasonic spindle 5-9. The coarse polishing devices on both sides share a motor. Two spindle frame moving rails 5-3 are set on each side, for a total of four, and are symmetrically mounted on the base 5-1 in pairs. Two ultrasonic spindle retainer plates 5-4 are set at the front and back, connected to the ultrasonic spindle 5-9 and mounted on the spindle frame moving rails 5-3, working together to maintain the radial stability of the ultrasonic spindle 5-9. The ultrasonic spindle 5-9 is mounted on the spindle retainer plate 5-4 through bearings. The clamping rails 5-5 are mounted on the clamping rail frames 5-8 and the base 5-1, symmetrically arranged. Two clamping rail frames 5-8 are symmetrically mounted on the left and right sides of the base 5-1. The U-shaped clamps 5-6 are mounted on the clamping rails 5-5, and the silicon wafer 5-7 is clamped and relaxed by movement. Heating plates 5-10 are distributed on the front and rear sides of the silicon wafer 5-7. One side is connected to the ultrasonic spindle 5-9 and rotates with the spindle. The other side is mounted on a force gauge 5-12 connected to the ultrasonic spindle 5-9 and also rotates with the ultrasonic spindle 5-9. The force gauge 5-12 is connected to the ultrasonic spindle 5-9 and can control the grinding load. The grinding disc 5-11 is mounted on the heating plates 5-10 on both sides of the silicon wafer 5-7. The worktable 5-14 is connected to the base 5-1 via a lead screw 5-13. The liquid delivery device 5-15 includes a peristaltic pump, a suction pipe, and a drip pipe. The liquid collection tank 5-16 is mounted on the base 5-1. During the rough polishing process, the silicon wafer is moved slightly left and right by the U-shaped clamp 5-6, resulting in more uniform rough polishing of the silicon wafer 5-7. The ultrasonic spindle 5-9 enables ultrasonic vibration of the rough polishing disc, and the heating plates 5-10 control the temperature of the rough polishing disc. Then, polishing slurry is added dropwise through the liquid delivery device 5-15, which enables rough polishing of the silicon wafer under the synergistic assistance of multiple fields: ultrasonic, temperature, and chemical. In this embodiment, the ultrasonic spindle 5-9 outputs an ultrasonic field with a frequency of 10-50 kHz and an amplitude of 0-10 μm, the heating plate 5-10 controls the temperature of the polishing disc at 20-100°C, and the liquid delivery device 5-15 adds polishing slurry at a rate of 10-80 mL / min.

[0036] The fine polishing module 6 includes a base 6-1, a gear 6-2, a spindle frame moving track 6-3, a spindle retainer plate 6-4, a fixture track 6-5, a U-shaped fixture 6-6, a silicon wafer 6-7, a fixture track frame 6-8, an ultrasonic spindle 6-9, a heating plate 6-10, a fine polishing disc (with a fine polishing pad attached) 6-11, a force gauge 6-12, a lead screw 6-13, a worktable 6-14, a liquid delivery device 6-15, and a liquid collection tank 6-16. The fine polishing action devices are respectively set on both sides of the silicon wafer. Specifically, gear 6-2 is mounted on the ultrasonic spindle 6-9, and the output end of the motor meshes with the gear. The motor controls the rotation of the ultrasonic spindle 6-9. The fine polishing action devices on both sides share a motor. Two spindle frame moving rails 6-3 are set on each side, for a total of four, and are symmetrically mounted on the base 6-1 in pairs. Two ultrasonic spindle retainer plates 6-4 are set at the front and back, connected to the ultrasonic spindle 6-9 and mounted on the spindle frame moving rails 6-3, working together to maintain the radial stability of the ultrasonic spindle 6-9. The ultrasonic spindle 6-9 is mounted on the spindle retainer plate 6-4 through bearings. The clamping rail 6-5 is mounted on the clamping rail frame 6-8 and the base 6-1, symmetrically arranged. Two clamping rail frames 6-8 are symmetrically mounted on the left and right sides of the base 6-1. The U-shaped clamp 6-6 is mounted on the clamping rail 6-5, and the silicon wafer 6-7 is clamped and relaxed by movement. Heating plates 6-10 are distributed on the front and rear sides of the silicon wafer 6-7. One side is connected to the ultrasonic spindle 6-9 and rotates with the spindle. The other side is mounted on a force gauge 6-12 connected to the ultrasonic spindle 6-9 and also rotates with the ultrasonic spindle 6-9. The force gauge 6-12 is connected to the ultrasonic spindle 6-9 and can control the grinding load. The grinding disc 6-11 is mounted on the heating plates 6-10 on both sides of the silicon wafer 6-7. The worktable 6-14 is connected to the base 6-1 via a lead screw 6-13. The liquid delivery device 6-15 includes a peristaltic pump, a suction pipe, and a drip pipe. The liquid collection tank 6-16 is mounted on the base 6-1. During the rough polishing process, the silicon wafer is moved slightly left and right by the U-shaped clamp 6-6, resulting in more uniform rough polishing of the silicon wafer 6-7. The ultrasonic spindle 6-9 enables ultrasonic vibration of the rough polishing disc, and the heating plates 6-10 control the temperature of the rough polishing disc. The polishing slurry is then added via the liquid delivery device 6-15, enabling fine polishing of the silicon wafer under the synergistic assistance of multiple fields: ultrasonic, temperature, and chemical. In this embodiment, the ultrasonic spindle 6-9 outputs an ultrasonic field with a frequency of 10–50 kHz and an amplitude of 0–10 μm. The heating plate 6-10 controls the temperature of the polishing disc at 20–100 °C, and the liquid delivery device 6-15 adds polishing slurry at a rate of 5–20 mL / min.

[0037] The control system 7 includes switches and an operation panel. Through the operation panel, precise transfer and clamping of silicon wafers can be achieved; process parameters such as cutting speed and stroke can be controlled; process parameters such as load and rotation speed for grinding, rough polishing, and fine polishing can be controlled; the frequency and amplitude of the ultrasonic vibration device 3-7, the temperature values ​​of the temperature controller 3-12 and heating plates 4-10, 5-10, and 6-10 can be controlled; and the dripping rates of the cutting fluid, grinding fluid, rough polishing fluid, and fine polishing fluid can be controlled. Ultimately, integrated processing of silicon wafer cutting, grinding, and polishing is achieved under the synergistic assistance of multiple fields: ultrasonic field, temperature field, and chemical field.

[0038] In summary, this integrated silicon wafer cutting, grinding, and polishing equipment, assisted by ultrasonic, temperature, and chemical fields, incorporates cutting, grinding, rough polishing, and fine polishing modules on a single machine. This allows for the simultaneous processing of silicon ingots from rod to wafer and from rough to fine finishes, effectively avoiding the losses and damage caused by transfers between different processing steps in traditional methods. Furthermore, the addition of ultrasonic vibration, temperature, and chemical field assistance to the cutting, grinding, and polishing devices improves silicon wafer processing efficiency and reduces surface damage, achieving high-quality and efficient cutting, grinding, and polishing of silicon wafers.

[0039] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An ultrasonic field, temperature field and chemical field synergistically assisted silicon wafer cutting, grinding and polishing integrated equipment, characterized in that, include: The system comprises a frame, a silicon wafer transfer device, a cutting module, a grinding module, a rough polishing module, a fine polishing module, and a control system. The frame is internally arranged according to the upstream and downstream relationship of the cutting, grinding, rough polishing, and fine polishing modules. Adjacent modules are connected by the silicon wafer transfer device to transfer the processed material from each module. The cutting module contains multiple sets of multi-energy field auxiliary cutting machines arranged side-by-side, with a silicon wafer transfer device positioned between every two sets of cutting machines. The ground rail of the silicon wafer transfer device extends to the grinding module. The grinding module contains multiple sets of multi-energy field auxiliary grinding machines arranged side-by-side. Each grinding machine... A silicon wafer transfer device is also installed after the grinding mill. Each ground rail extends to the coarse polishing module. Multiple sets of multi-energy field assisted coarse polishing machines are arranged side by side in the coarse polishing module. A silicon wafer transfer device is installed between every two sets of coarse polishing machines. Each ground rail extends to the fine polishing module. Multiple sets of multi-energy field assisted fine polishing machines are arranged side by side in the fine polishing module. The cutting module, grinding module, coarse polishing module and fine polishing module are all designed with ultrasonic field, temperature field and chemical field auxiliary devices. The silicon wafer transfer device, cutting module, grinding module, coarse polishing module and fine polishing module are integrated and controlled by the control system. The grinding module includes a base, gears, a spindle support moving track, a spindle retainer plate, a fixture track, a U-shaped fixture, a silicon wafer, a fixture track frame, an ultrasonic spindle, a heating plate, a grinding disc, a force gauge, a lead screw, a worktable, a liquid delivery device, and a liquid collection tank. The grinding action devices are respectively located on both sides of the silicon wafer. Specifically, the gear is mounted on the ultrasonic spindle, and the output end of the motor meshes with the gear, controlling the rotation of the ultrasonic spindle via the motor. The grinding action devices on both sides share a single motor. Two spindle support moving tracks are provided on each side, for a total of four tracks, symmetrically mounted in pairs on the base. Two ultrasonic spindle retainer plates are provided at the front and rear, connected to the ultrasonic spindle and mounted on the spindle support moving track, working together to maintain the radial stability of the ultrasonic spindle. The ultrasonic spindle is mounted on the spindle retainer plate via bearings. The fixture tracks are mounted on the fixture track frame and the base, symmetrically arranged left and right. Two fixture track frames are symmetrically mounted on the base. On the left and right sides of the base, U-shaped clamps are installed on clamp tracks, which can clamp and relax the silicon wafer by moving. Heating plates are distributed on the front and back sides of the silicon wafer. One side is connected to the ultrasonic spindle and rotates with the spindle. The other side is installed on a force gauge connected to the ultrasonic spindle and also rotates with the ultrasonic spindle. The force gauge is connected to the ultrasonic spindle and controls the grinding load. The grinding disc is installed on the heating plates on both sides of the silicon wafer. The worktable is connected to the base through a lead screw. The liquid delivery device includes a peristaltic pump, a suction tube and a drip tube. The liquid collection tank is installed on the base. During the grinding process, the U-shaped clamps move left and right to achieve small left and right movements of the silicon wafer, so as to achieve more uniform grinding of the silicon wafer. The ultrasonic spindle realizes the ultrasonic vibration of the grinding disc. The temperature of the grinding disc is controlled by the heating plates. The grinding liquid is added by the liquid delivery device, so as to realize the multi-field synergistic assistance of ultrasonic field, temperature field and chemical field in grinding the silicon wafer. The coarse polishing module includes a base, gears, a spindle support moving track, a spindle retainer plate, a fixture track, a U-shaped clamp, a silicon wafer, a fixture track frame, an ultrasonic spindle, a heating plate, a coarse polishing disc with a coarse polishing pad, a force gauge, a lead screw, a worktable, a liquid delivery device, and a liquid collection tank. The coarse polishing action devices are respectively located on both sides of the silicon wafer. Specifically, the gear is mounted on the ultrasonic spindle, and the output end of the motor meshes with the gear, controlling the rotation of the ultrasonic spindle via the motor. The coarse polishing action devices on both sides share a single motor. Two spindle support moving tracks are arranged on each side, for a total of four tracks, symmetrically mounted in pairs on the base. Two ultrasonic spindle retainer plates are arranged at the front and rear, connected to the ultrasonic spindle and mounted on the spindle support moving track, working together to maintain the radial stability of the ultrasonic spindle. The ultrasonic spindle is mounted on the spindle retainer plate via bearings. The fixture tracks are mounted on the fixture track frame and the base, symmetrically arranged left and right. Two fixture track frames are symmetrically mounted on... On the left and right sides of the base, U-shaped clamps are installed on clamp tracks, which clamp and relax the silicon wafer by moving. Heating plates are distributed on the front and back sides of the silicon wafer. One side is connected to the ultrasonic spindle and rotates with the spindle. The other side is installed on a force gauge connected to the ultrasonic spindle and also rotates with the ultrasonic spindle. The force gauge is connected to the ultrasonic spindle and controls the grinding load. The grinding disc is installed on the heating plates on both sides of the silicon wafer. The worktable is connected to the base through a lead screw. The liquid delivery device includes a peristaltic pump, a suction tube, and a drip tube. The liquid collection tank is installed on the base. During the rough polishing process, the U-shaped clamps move left and right to achieve small left and right movements of the silicon wafer, so as to achieve more uniform rough polishing of the silicon wafer. The ultrasonic spindle realizes the ultrasonic vibration of the rough polishing disc. The temperature of the rough polishing disc is controlled by the heating plates. Then, the grinding liquid is dripped by the liquid delivery device to achieve rough polishing of the silicon wafer under the synergistic assistance of multiple fields such as ultrasonic field, temperature field and chemical field. The fine polishing module includes a base, gears, a spindle support moving track, a spindle retainer plate, a fixture track, a U-shaped fixture, a silicon wafer, a fixture track frame, an ultrasonic spindle, a heating plate, a fine polishing disc with a fine polishing pad, a force gauge, a lead screw, a worktable, a liquid delivery device, and a liquid collection tank. The fine polishing action devices are respectively located on both sides of the silicon wafer. Specifically, the gear is mounted on the ultrasonic spindle, and the output end of the motor meshes with the gear, controlling the rotation of the ultrasonic spindle via the motor. The fine polishing action devices on both sides share a single motor. Two spindle support moving tracks are arranged on each side, for a total of four tracks, symmetrically mounted in pairs on the base. Two ultrasonic spindle retainer plates are arranged at the front and rear, connected to the ultrasonic spindle and mounted on the spindle support moving track, working together to maintain the radial stability of the ultrasonic spindle. The ultrasonic spindle is mounted on the spindle retainer plate via bearings. The fixture tracks are mounted on the fixture track frame and the base, symmetrically arranged left and right, with two fixture track frames symmetrically installed. On the left and right sides of the base, U-shaped clamps are installed on clamp tracks, which clamp and relax the silicon wafer by moving. Heating plates are distributed on the front and rear sides of the silicon wafer. One side is connected to the ultrasonic spindle and rotates with the spindle. The other side is installed on a force gauge connected to the ultrasonic spindle and also rotates with the ultrasonic spindle. The force gauge is connected to the ultrasonic spindle and can control the grinding load. The grinding disc is installed on the heating plates on both sides of the silicon wafer. The worktable is connected to the base through a lead screw. The liquid delivery device includes a peristaltic pump, a suction pipe, and a drip pipe. The liquid collection tank is installed on the base. During the fine polishing process, the U-shaped clamps move left and right to achieve slight left and right movements of the silicon wafer, so as to achieve more uniform fine polishing of the silicon wafer. The ultrasonic spindle realizes the ultrasonic vibration of the fine polishing disc. The temperature of the fine polishing disc is controlled by the heating plates. Then, the grinding liquid is dripped by the liquid delivery device to achieve fine polishing of the silicon wafer under the synergistic assistance of multiple fields such as ultrasonic field, temperature field and chemical field.

2. The apparatus of claim 1, wherein the apparatus is characterized by: The silicon wafer transfer device includes a ground rail, a robotic arm, a vacuum pump, and a vacuum suction cup. The ground rail is fixed to the ground, the robotic arm is mounted on the ground rail and can move along the ground rail, the vacuum pump is connected to the vacuum suction cup through a pipeline, and the vacuum suction cup is fixed on the end shaft of the robotic arm. The vacuum suction cup and the ground rail robotic arm are used to pick up and transfer silicon wafers.

3. The apparatus of claim 1, wherein the apparatus further comprises a temperature sensor. The cutting module includes a cutting machine frame, a liquid collection tank, a base, a lead screw, a worktable, a moving box, an ultrasonic vibration device, tensioning rollers, diamond cutting wire, a liquid delivery system, a temperature control cover, a temperature controller, a silicon wafer, a U-shaped clamp, and a clamp track. The liquid collection tank is located at the bottom. The lead screw is installed between the frame base and the worktable to raise and lower the worktable, thereby controlling the cutting depth. The moving box is connected to the worktable via a lead screw, enabling forward and backward movement. The ultrasonic vibration device, including an ultrasonic generator and an ultrasonic transducer, is mounted on the moving box. Several tensioning rollers are mounted on the cutting machine frame, and the diamond cutting wire is wound around each tensioning roller. The liquid delivery system includes a water pump and a hose. The cutting fluid is fed into the collection tank through a hose and then output above the silicon wafer through the universal tube. A temperature control hood is mounted on the frame, and a temperature controller is mounted on top of the cutting machine. The moving box, ultrasonic vibration device, tensioning wheel, diamond cutting wire, fluid delivery universal tube, and temperature controller are all placed inside the temperature control hood. A U-shaped clamp track is mounted on the ultrasonic vibration device. The U-shaped clamp moves to clamp and relax via the track. The U-shaped clamp is driven by a power source. The ultrasonic vibration device enables ultrasonic vibration of the silicon ingot during the cutting process. The temperature controller adjusts the cutting environment temperature, and the chemical cutting fluid is delivered to achieve multi-field synergistic assisted cutting through ultrasonic, temperature, and chemical fields.

4. The integrated silicon wafer cutting, grinding, and polishing equipment assisted by ultrasonic field, temperature field, and chemical field synergy as described in claim 1, characterized in that, The control system includes switches and an operation panel. Through the operation panel, precise transfer and fixed clamping of silicon wafers are achieved, the cutting speed and stroke are controlled, the load and rotation speed of grinding, rough polishing and fine polishing are controlled, the frequency and amplitude of the ultrasonic vibration device, the temperature of the temperature controller and the heating plate are controlled, and the dripping speed of the cutting fluid, grinding fluid, rough polishing fluid and fine polishing fluid are controlled, so as to realize the integrated processing of silicon wafer cutting, grinding and polishing under the synergistic assistance of multiple fields such as ultrasonic field, temperature field and chemical field.

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