Assembly device

Abstract

The assembling device includes a main frame; a magnetic head, which is arranged on the main frame and magnetically assembles the semiconductor light-emitting device to the panel; and a vibration isolator, which is arranged on the main frame and offsets the vibration of the magnetic head; the magnetic head includes a magnet plate assembly, the magnet plate assembly includes a magnet that applies attractive force to the semiconductor light-emitting device, and the vibration isolator includes a counterweight located on the magnet plate assembly, which can minimize the vibration generated from the magnetic head and transmitted to the main frame.

Description

Technical Field

[0001] The present invention relates to an assembling device, and more particularly, to an assembling device capable of assembling a semiconductor light emitting device to a display panel. Background Art

[0002] In recent years, in the field of display technology, display devices with excellent characteristics such as thinness and flexibility are being developed. In contrast, among the main displays currently commercialized, LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes) are representative.

[0003] However, in the case of LCD, there are problems of slow response time and difficulty in achieving flexibility, and in the case of AMOLED, there are weaknesses of short lifespan and poor mass production yield.

[0004] On the other hand, a light emitting diode (LED) is a well-known semiconductor light emitting device that converts electric current into light. Since the commercialization of red LED using GaAsP (gallium arsenide phosphide) compound semiconductor in 1962, it has been used together with GaP:N series green LED as a light source for displaying images in electronic devices such as information and communication equipment. Therefore, a solution to the above-mentioned problem can be proposed by realizing a display using the semiconductor light emitting device. Compared with filament-based light emitting elements, this light emitting diode has various advantages such as long life, low power consumption, excellent initial driving characteristics, and high vibration resistance.

[0005] On the other hand, in the case of a display using semiconductor light-emitting devices, it is necessary to combine semiconductor light-emitting devices corresponding to each of a plurality of pixels with a substrate, so it may be relatively difficult to realize a large-screen high-pixel display. Therefore, in recent years, a self-assembly method has been developed in which a plurality of semiconductor light-emitting devices placed in a fluid are moved toward a substrate using an electromagnetic field and then assembled. Summary of the invention

[0006] Problem that the invention aims to solve

[0007] An object of the present embodiment is to provide an assembling device that minimizes vibration generated from a magnetic head and transmitted to a main frame.

[0008] An object of the present embodiment is to provide an assembly device capable of improving the durability of a driving portion and a supporting portion of a driving magnetic head.

[0009] Means used to solve problems

[0010] The assembling device of this embodiment may include: a main frame; a magnetic head, which is arranged on the main frame and magnetically assembles the semiconductor light emitting device to the panel; and an isolator, which is arranged on the main frame and offsets the vibration of the magnetic head.

[0011] The magnetic head may include a magnet plate assembly including a magnet that applies an attractive force to the semiconductor light emitting device, and the vibration isolator may include a weight located on the magnet plate assembly.

[0012] The magnetic head can move the magnet plate assembly along a first circular track, and the vibration isolator can move the counterweight along a second circular track. The first circular track can have a first radius, and the second circular track can have a second radius, and the second radius can be greater than the first radius.

[0013] The vibration isolator may include: an anti-vibration frame fastened to the main frame; a bracket disposed on the anti-vibration frame; an anti-vibration motor disposed on the bracket; an anti-vibration shaft rotated by the anti-vibration motor; and a counterweight eccentrically connected to the anti-vibration shaft.

[0014] The magnetic head may include a magnet plate assembly; and a plurality of driving mechanisms connected to the magnet plate assembly and spaced apart from each other.

[0015] The main frame may include an inner frame and a side frame protruding from the inner frame.

[0016] The vibration isolator may be disposed inside the inner frame, and each of the plurality of drive mechanisms may be disposed on the side frame.

[0017] Each of the plurality of driving mechanisms may include: a bearing disposed on the magnet plate assembly; an eccentric shaft supported by the bearing; a lower coupling for eccentrically connecting the eccentric shaft; a drive shaft connected to the lower coupling; an upper coupling connected to the drive shaft; and a head motor for rotating the upper coupling.

[0018] The eccentric distance between the counterweight and the anti-vibration shaft may be greater than the eccentric distance between the eccentric shaft and the driving shaft.

[0019] The anti-vibration shaft and the drive shaft can be placed side by side.

[0020] The rotation direction of the anti-vibration shaft and the rotation direction of the drive shaft may be the same.

[0021] Effects of the Invention

[0022] According to the embodiment of the present invention, the vibration isolator offsets the vibration of the magnetic head, thereby minimizing the vibration transferred to the main frame when the magnetic head operates.

[0023] In addition, the weight is provided on the magnet plate assembly, so that the vibration isolator can be protected by the magnet plate assembly.

[0024] In addition, the second radius of the second circular trajectory of the movement of the counterweight is greater than the first radius of the first circular trajectory of the movement of the magnet plate assembly, thereby minimizing not only the vibration but also the weight of the counterweight.

[0025] In addition, the vibration isolator is provided inside the inner frame of the main frame, so that the vibration isolator can be protected by the inner frame. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 This is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting device according to the present invention.

[0027] Figure 2 yes Figure 1 A partial enlarged view of part A. Figure 3a and Figure 3b is along Figure 2 Cross-sectional view taken along line BB and line CC.

[0028] Figure 4 is a conceptual diagram illustrating a flip chip type semiconductor light emitting device in FIG. 3 .

[0029] Figure 5a to Figure 5c is a conceptual diagram showing various forms of realizing colors related to a flip-chip type semiconductor light emitting device.

[0030] Figure 6 2 is a cross-sectional view showing a method for manufacturing a display device using a semiconductor light emitting device according to the present invention.

[0031] Figure 7 FIG. 1 is a perspective view showing another embodiment of a display device using a semiconductor light emitting device according to the present invention.

[0032] Figure 8 is along Figure 7 Cross-sectional view taken along line DD.

[0033] Fig. 9 It is shown Figure 8 Conceptual diagram of a vertical semiconductor light-emitting device.

[0034] Fig.10 FIG. 1 is a diagram schematically showing an embodiment of a method for assembling a semiconductor light emitting device to a display panel by a self-assembly method.

[0035] Fig.11 It is a front view of the assembly system of this embodiment.

[0036] Fig.12 It is shown Fig.11 A side view of the assembled device is shown.

[0037] Fig.13 It is shown Fig.11 A perspective view of the assembled device is shown.

[0038] Fig.14 yes Fig.13 A perspective view of the vibration isolator shown.

[0039] Fig.15 : is a cross-sectional view showing the vibration isolator of this embodiment.

[0040] Fig.16 is a cross-sectional view showing the magnetic head of this embodiment.

[0041] Fig.17 : is a cross-sectional view showing the inside of the magnet plate assembly of this embodiment.

[0042] Fig.18 1 is a diagram illustrating the vibration canceling principle of the vibration isolator of the present embodiment. DETAILED DESCRIPTION

[0043] Hereinafter, the embodiments disclosed in this specification are described in detail with reference to the accompanying drawings. Regardless of the figure numbers, the same or similar structural elements are given the same figure numbers, and repeated descriptions thereof are omitted. The suffixes "module" and "unit" of the constituent elements used in the following description are only given or mixed for the convenience of writing the description, and they themselves do not have mutually distinguishable meanings or functions. In addition, in the process of describing the embodiments disclosed in this specification, when it is determined that the specific description of the relevant known technology will confuse the gist of the embodiments disclosed in this specification, the detailed description of the known technology is omitted. In addition, it should be understood that the drawings are provided to facilitate the understanding of the embodiments disclosed in this specification, and the technical ideas disclosed in this specification are not limited to the drawings.

[0044] In addition, it should be understood that when an element such as a layer, a region or a substrate is described as being “on” different constituent elements, it means that it is directly on other elements or intervening elements may exist between the two elements.

[0045] The display device described in this specification may include a mobile phone, a smart phone, a laptop computer, a digital broadcast terminal, a PDA (personal digital assistants), a PMP (portable multime diaplayer), a navigator, a slate PC, a tablet PC, an ultrabook, a digital TV, a desktop computer, etc. However, it is obvious to a person skilled in the art that the configuration of the embodiments described in this specification can also be applied to a display device of a new product form developed later.

[0046] Before describing an assembling device for assembling a semiconductor light emitting device to a display panel (substrate) according to an embodiment of the present invention, a semiconductor light emitting device and a display device using the same are described.

[0047] Figure 1 This is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting device according to the present invention.

[0048] As shown in the figure, information processed by the control unit of the display device 100 can be displayed using a flexible display.

[0049] Flexible displays include displays that can be bent, folded, twisted, folded, or rolled up by external forces. For example, a flexible display can be a display manufactured on a thin and soft substrate that can be bent, folded, or rolled up like paper while maintaining the display characteristics of an existing flat panel display.

[0050] When the flexible display is in a non-bending state (e.g., a state with an infinite radius of curvature, hereinafter referred to as the first state), the display area of ​​the flexible display becomes a plane. In the first state, in a state bent due to an external force (e.g., a state with a limited radius of curvature, hereinafter referred to as the second state), the display area may become a curved surface. As shown in the figure, the information displayed in the second state may be visual information output on the curved surface. This visual information is realized by independently controlling the light emission of unit pixels (sub-pixels) configured in a matrix shape. The unit pixel represents the smallest unit for realizing a color.

[0051] The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as a semiconductor light emitting device that converts current into light. Since the light emitting diode is formed in a small size, it can function as a unit pixel even in the second state.

[0052] Hereinafter, the flexible display implemented by using the light emitting diodes will be described in further detail with reference to the accompanying drawings.

[0053] Figure 2 yes Figure 1 A partial enlarged view of part A. Figure 3a and Figure 3b is along Figure 2 The cross-sectional view cut along the lines BB and CC, Figure 4 It is shown Figure 3a Conceptual diagram of a flip-chip semiconductor light-emitting device in FIG. Figure 5a to Figure 5c is a conceptual diagram showing various forms of realizing colors related to a flip-chip type semiconductor light emitting device.

[0054] like Figure 2 , Figure 3a as well as Figure 3b As shown, as the display device 100 using semiconductor light emitting devices, a display device 100 using a passive matrix (PM) semiconductor light emitting device is exemplified. However, the example described below can also be applied to an active matrix (AM) semiconductor light emitting device.

[0055] The display device 100 includes a substrate 110 , a first electrode 120 , a conductive adhesive layer 130 , a second electrode 140 , and a plurality of semiconductor light emitting devices 150 .

[0056] The substrate 110 may be a flexible substrate. For example, in order to realize a flexible display device, the substrate 110 may include glass or polyimide (PI). In addition, any insulating and flexible material may be used, such as PEN (Polyethylene Naphthalate), PET (Polyethylene Terephthalate), etc. In addition, the substrate 110 may be any one of a transparent material and an opaque material.

[0057] The substrate 110 may be a wiring substrate provided with the first electrode 120 , and thus the first electrode 120 may be located on the substrate 110 .

[0058] As shown in the figure, the insulating layer 160 can be arranged on the substrate 110 provided with the first electrode 120, and the auxiliary electrode 170 can be located on the insulating layer 160. In this case, the insulating layer 160 can become a wiring substrate when it is stacked on the substrate 110. More specifically, the insulating layer 160 can be made of an insulating and flexible material, such as polyimide (PI), PET, PEN, etc., and can be formed into a substrate by being integrated with the substrate 110.

[0059] The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 to the semiconductor light emitting device 150, and is located on the insulating layer 160 and is configured corresponding to the position of the first electrode 120. For example, the auxiliary electrode 170 is in a dot shape and can be electrically connected to the first electrode 120 through an electrode hole 171 that penetrates the insulating layer 160. The electrode hole 171 can be formed by filling a conductive material in the via hole.

[0060] Referring to this figure, although the conductive adhesive layer 130 is formed on one side of the insulating layer 160, the present invention is not limited thereto. For example, a layer performing a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or the conductive adhesive layer 130 may be disposed on the substrate 110 without the insulating layer 160. In the structure where the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may function as an insulating layer.

[0061] The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity, and for this purpose, a conductive substance and an adhesive substance may be mixed in the conductive adhesive layer 130. In addition, since the conductive adhesive layer 130 has ductility, a flexible function can be realized in the display device.

[0062] As such an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), anisotropic conductive paste, a solution containing conductive particles, etc. The conductive adhesive layer 130 may be configured to allow mutual electrical connection in the Z direction through the thickness, and to have electrical insulation in the horizontal XY direction. Therefore, the conductive adhesive layer 130 may be named a Z-axis conductive layer (however, hereinafter referred to as a "conductive adhesive layer").

[0063] The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed in an insulating base member. If heat and pressure are applied, only a specific portion becomes conductive due to the anisotropic conductive medium. Although the following description is based on the state of applying heat and pressure to the anisotropic conductive film, other methods may also be used to make a part of the anisotropic conductive film conductive. For example, these methods may be any of the above-mentioned methods of applying only heat and pressure or UV curing, etc.

[0064] In addition, for example, the anisotropic conductive medium can be a conductive ball or a conductive particle. As shown in the figure, in this example, the anisotropic conductive film is a film in the form of conductive balls mixed in an insulating base component. If heat and pressure are applied, only a specific part has conductivity due to the conductive balls. The anisotropic conductive film can be in a state containing a plurality of particles, wherein the particles are a core of a conductive material coated with an insulating film of a polymer material. In this case, as the insulating film of the portion to which heat and / or pressure is applied is destroyed, the core has conductivity. At this time, the shape of the core is deformed, and layers that are in contact with each other in the thickness direction of the film can be formed. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and an electrical connection in the Z-axis direction is locally formed due to the height difference of the relative objects bonded by the anisotropic conductive film.

[0065] As another example, the anisotropic conductive film may be in a state containing a plurality of particles, wherein the particles are formed by coating an insulating core with a conductive substance. In this case, the conductive substance in the portion to which heat and pressure are applied is deformed (pressed and adhered), and has conductivity along the thickness direction of the film. As another example, it may also be a form in which the conductive substance penetrates the insulating base member along the Z-axis direction and has conductivity along the thickness direction of the film. In this case, the conductive substance may have a pointed end.

[0066] As shown in the figure, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one side of an insulating base member. More specifically, the insulating base member is formed of an adhesive material, the conductive balls are concentrated at the bottom of the insulating base member, and when heat and pressure are applied to the base member, the conductive balls deform together with the conductive balls and become conductive in the vertical direction.

[0067] However, the present invention is not limited thereto, and the anisotropic conductive film may be in a form in which conductive balls are randomly mixed in an insulating base member, or may be in a form in which conductive balls are arranged in a plurality of layers (double-ACF), or the like.

[0068] Anisotropic conductive paste is a combination of paste and conductive balls, and may be a paste in which conductive balls are mixed in an insulating and adhesive base material. Also, the solution containing conductive particles may be a solution containing conductive microparticles or nanoparticles.

[0069] Referring to the drawing again, the second electrode 140 is located on the insulating layer 160 in a state of being separated from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are located.

[0070] When the auxiliary electrode 170 and the second electrode 140 are located on the insulating layer 160 , after forming the conductive adhesive layer 130 , if the semiconductor light emitting device 150 is contacted in the form of a flip chip by applying heat and pressure, the semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140 .

[0071] Reference Figure 4 , the semiconductor light emitting device may be a flip chip type light emitting device.

[0072] For example, the semiconductor light emitting device includes: a p-type electrode 156, a p-type semiconductor layer 155 formed with the p-type electrode 156, an active layer 154 formed on the p-type semiconductor layer 155, an n-type semiconductor layer 153 formed on the active layer 154, and an n-type electrode 152 arranged horizontally apart from the p-type electrode 156 on the n-type semiconductor layer 153. In this case, the p-type electrode 156 can be electrically connected to the conductive adhesive layer 130 through the auxiliary electrode 170, and the n-type electrode 152 can be electrically connected to the second electrode 140.

[0073] Refer again Figure 2 , Figure 3a as well as Figure 3b The auxiliary electrode 170 is formed long in one direction, so that one auxiliary electrode can be electrically connected to a plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the semiconductor light emitting devices on the left and right sides of the auxiliary electrode can be electrically connected to one auxiliary electrode.

[0074] More specifically, due to heat and pressure, the semiconductor light emitting device 150 is pressed into the conductive adhesive layer 130, thereby making only the portion between the p-type electrode 156 of the semiconductor light emitting device 150 and the auxiliary electrode 170, and the portion between the n-type electrode 152 of the semiconductor light emitting device 150 and the second electrode 140 conductive, while the other portions are not conductive because the semiconductor light emitting device is not pressed. Similarly, the conductive adhesive layer 130 not only combines the semiconductor light emitting device 150 and the auxiliary electrode 170, and the semiconductor light emitting device 150 and the second electrode 140, but also forms an electrical connection.

[0075] In addition, a plurality of semiconductor light emitting devices 150 constitute a light emitting device array, and a phosphor layer 180 is formed on the light emitting device array.

[0076] The light emitting device array may include a plurality of semiconductor light emitting devices having different brightness values. Each semiconductor light emitting device 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, the first electrode 120 may be a plurality of semiconductor light emitting devices, for example, the plurality of semiconductor light emitting devices may be configured as a plurality of columns, and the semiconductor light emitting devices in each column may be electrically connected to any one of the plurality of first electrodes.

[0077] In addition, since the plurality of semiconductor light emitting devices are connected in a flip chip form, a plurality of semiconductor light emitting devices grown on a transparent dielectric substrate can be used. In addition, the semiconductor light emitting device can be, for example, a nitride semiconductor light emitting device. Since the semiconductor light emitting device 150 has excellent brightness, a single unit pixel can be formed even in a small size.

[0078] As shown in the figure, a partition wall 190 may be formed between the semiconductor light emitting devices 150. In this case, the partition wall 190 may play a role in separating the individual unit pixels from each other, and may be formed as a whole with the conductive adhesive layer 130. For example, the partition wall may be formed by inserting the semiconductor light emitting device 150 into an anisotropic conductive film, and the base member of the anisotropic conductive film.

[0079] In addition, if the base member of the anisotropic conductive film is black, the partition wall 190 can have a reflective property and increase contrast even without an additional black insulator.

[0080] As another example, a reflective partition wall may be additionally provided as the partition wall 190. In this case, the partition wall 190 may include a black (Black) or white (White) insulator according to the purpose of the display device. In the case of a partition wall using a white insulator, it may have an effect of improving reflectivity, and in the case of a partition wall using a black insulator, it may have a reflective property while increasing contrast.

[0081] The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue B light, and the phosphor layer 180 performs the function of converting the blue B light into the hue of the unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting a single pixel.

[0082] That is, at the position constituting the red unit pixel, a red phosphor 181 capable of converting blue light into red R light can be stacked on the blue semiconductor light emitting device, and at the position constituting the green unit pixel, a green phosphor 182 capable of converting blue light into green G light can be stacked on the blue semiconductor light emitting device. In addition, in the portion constituting the blue unit pixel, only the blue semiconductor light emitting device can be used alone. In this case, the unit pixels of red R, green G, and blue B can constitute one pixel. More specifically, phosphors of one hue can be stacked along each line of the first electrode 120. Therefore, in the first electrode 120, one line can be an electrode that controls one hue. That is, along the second electrode 140, red R, green G, and blue B can be sequentially configured, thereby realizing a unit pixel.

[0083] However, the present invention is not limited thereto, and unit pixels of red R, green G, and blue B may be realized by combining the semiconductor light emitting device 150 and quantum dots (QD) instead of the phosphor.

[0084] In addition, in order to improve contrast, a black matrix 191 may be disposed between each phosphor layer. That is, the black matrix 191 may improve the contrast between light and dark.

[0085] However, the present invention is not limited thereto, and other structures for realizing blue, red, and green may be used.

[0086] Reference Figure 5a Each semiconductor light emitting device 150 can be made of gallium nitride (GaN) as a main material and indium (In) and / or aluminum (Al) as a main material, thereby realizing a high-output light emitting device that emits a variety of lights including blue.

[0087] In this case, in order to form a unit pixel (sub-pixel), the semiconductor light emitting device 150 can be a red, green and blue semiconductor light emitting device, respectively. For example, red R, green G and blue B semiconductor light emitting devices are alternately arranged, and the red (Red), green (Green) and blue (Blue) unit pixels based on the red, green and blue semiconductor light emitting devices form a pixel (pixel), thereby realizing a full-color display.

[0088] Reference Figure 5b , the semiconductor light emitting device may be provided with white light emitting devices W each having a yellow phosphor layer. In this case, in order to constitute a unit pixel, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting device W. In addition, on such a white light emitting device W, a unit pixel may be constituted by repeating red, green, and blue color filters.

[0089] Reference Figure 5c , or a structure in which a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 are provided on the ultraviolet light emitting device UV. As described above, the semiconductor light emitting device can be used in the entire range from visible light to ultraviolet light UV, and thus can be expanded to a form of a semiconductor light emitting device that can use ultraviolet light UV as an excitation source (excitation source) of the upper phosphor.

[0090] Referring again to this example, the semiconductor light emitting device 150 is located on the conductive adhesive layer 130, thereby constituting a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent brightness, a single unit pixel can be constituted even in a small size. The size of such a single semiconductor light emitting device 150 can be a rectangular or regular quadrilateral device with a side length of 80 μm or less. If it is a rectangle, it can be a size of 20×80 μm or less.

[0091] In addition, even if a semiconductor light-emitting device 150 of a regular quadrilateral with a single side length of 10 μm is used as a unit pixel, sufficient brightness for constituting a display device can be displayed. Therefore, taking the case where the size of a unit pixel is a rectangular pixel with one side of 600 μm and the remaining side of 300 μm as an example, the spacing of the semiconductor light-emitting device 150 is relatively large enough. Therefore, in such a case, a flexible display device with high image quality above HD can be realized.

[0092] The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Figure 6 , the manufacturing method is described.

[0093] Figure 6 2 is a cross-sectional view showing a method for manufacturing a display device using a semiconductor light emitting device according to the present invention.

[0094] Referring to this figure, first, a conductive adhesive layer 130 is formed on an insulating layer 160 where an auxiliary electrode 170 and a second electrode 140 are located. A substrate (or wiring substrate) is formed by stacking an insulating layer 160 on a first substrate 110, on which a first electrode 120, an auxiliary electrode 170, and a second electrode 140 are arranged. In this case, the first electrode 120 and the second electrode 140 may be arranged in mutually orthogonal directions. In addition, in order to realize a flexible display device, the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI), respectively.

[0095] For example, the conductive adhesive layer 130 may be implemented by an anisotropic conductive film. To this end, the anisotropic conductive film may be coated on the substrate where the insulating layer 160 is located.

[0096] Then, the second substrate 112 where a plurality of semiconductor light emitting devices 150 constituting a single pixel are located corresponding to the positions of the auxiliary electrode 170 and the second electrode 140 is arranged such that the semiconductor light emitting device 150 is opposite to the auxiliary electrode 170 and the second electrode 140 .

[0097] In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150 , and may be a sapphire substrate or a silicon substrate.

[0098] When the semiconductor light emitting device is formed in wafer units, it has a spacing and size that can form a display device, so that it can be effectively used in the display device.

[0099] Then, the wiring substrate and the second substrate 112 are thermocompressed. For example, the wiring substrate and the second substrate 112 can be thermocompressed by using an ACF press head. The wiring substrate and the second substrate 112 are bonded by thermocompression bonding. By thermocompression bonding, due to the characteristics of the conductive anisotropic conductive film, only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and between the semiconductor light emitting device 150 and the second electrode 140 has conductivity, thereby, the electrode and the semiconductor light emitting device 150 can be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the interior of the anisotropic conductive film, thereby forming a partition wall between the semiconductor light emitting devices 150.

[0100] Then, the second substrate 112 is removed. For example, the second substrate 112 can be removed by using a laser lift-off (LLO) method or a chemical lift-off (CLO) method.

[0101] Finally, the semiconductor light emitting device 150 is exposed to the outside by removing the second substrate 112. As required, silicon oxide (SiO x ) etc. to form a transparent insulating layer (not shown).

[0102] In addition, the step of forming a phosphor layer on one side of the semiconductor light emitting device 150 may be further included. For example, if the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue B light, a red phosphor or a green phosphor for converting the blue B light into the hue of a unit pixel may be formed as a layer on one side of the blue semiconductor light emitting device.

[0103] The manufacturing method or structure of the display device using the semiconductor light emitting device described above can be changed into various forms. For example, in the display device described above, a vertical semiconductor light emitting device can also be applied. Figure 6 , the vertical structure is explained.

[0104] In the modifications or embodiments described below, the same or similar components as those in the above-described embodiment are denoted by the same or similar reference numerals, and the above description is used for the description of the same or similar components.

[0105] Figure 7 is a perspective view showing another embodiment of a display device using a semiconductor light emitting device of the present invention, Figure 8 is along Figure 7 The cross-sectional view of the line DD, Fig. 9 It is shown Figure 8 Conceptual diagram of a vertical semiconductor light-emitting device.

[0106] Referring to this drawing, the display device may be a display device using a vertical semiconductor light emitting device of a passive matrix (PM) method.

[0107] The display device includes a substrate 210 , a first electrode 220 , a conductive adhesive layer 230 , a second electrode 240 , and a plurality of semiconductor light emitting devices 250 .

[0108] The substrate 210 is a wiring substrate provided with the first electrode 220 , and may include polyimide (PI) to realize a flexible display device. In addition, any material having insulation and flexibility may be used.

[0109] The first electrode 220 is located on the substrate 210 and may be formed as a long bar-shaped electrode extending in one direction. The first electrode 220 may be configured to function as a data electrode.

[0110] The conductive adhesive layer 230 is formed on the substrate 210 where the first electrode 220 is located. Like the display device using a flip chip type light emitting device, the conductive adhesive layer 230 may be an anisotropy conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, etc. However, in this embodiment, the case where the conductive adhesive layer 230 is implemented by an anisotropic conductive film is also illustrated.

[0111] After the anisotropic conductive film is provided while the first electrode 220 is located on the substrate 210, the semiconductor light emitting device 250 is connected by applying heat and pressure, and the semiconductor light emitting device 250 is electrically connected to the first electrode 220. At this time, the semiconductor light emitting device 250 is preferably configured to be located on the first electrode 220.

[0112] The electrical connection is generated because, if heat and pressure are applied to the anisotropic conductive film, it locally becomes conductive in the thickness direction. Therefore, the anisotropic conductive film is divided into a portion having conductivity and a portion having no conductivity in the thickness direction.

[0113] In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 not only realizes the electrical connection between the semiconductor light emitting device 250 and the first electrode 220, but also realizes the mechanical connection.

[0114] As described above, the semiconductor light emitting device 250 is located on the conductive adhesive layer 230, thereby constituting a single pixel in the display device. Since the semiconductor light emitting device 250 has excellent brightness, it can constitute a single unit pixel even if it is small in size. The size of such a single semiconductor light emitting device 250 can be a rectangular or regular quadrilateral device with a length of one side of 80 μm or less. In the case of a rectangle, it can be a size of 20×80 μm or less.

[0115] The semiconductor light emitting element 250 may form a vertical structure.

[0116] A plurality of second electrodes 240 are provided between the vertical semiconductor light emitting devices. The second electrodes 240 are arranged in a direction intersecting the length direction of the first electrodes 220 and are electrically connected to the vertical semiconductor light emitting devices 250 .

[0117] Reference Fig. 9 , such a vertical semiconductor light emitting device includes: a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255, an n-type semiconductor layer 253 formed on the active layer 254, and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom can be electrically connected to the first electrode 220 through the conductive adhesive layer 230, and the n-type electrode 252 located at the top can be electrically connected to the second electrode 240 described later. Such a vertical semiconductor light emitting device 250 can configure electrodes at the top / bottom, so it has a great advantage of reducing the chip size.

[0118] Refer again Figure 8 , a phosphor layer 280 may be formed on one side of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue B light, and a phosphor layer 280 for converting such blue B light into the hue of a unit pixel may be provided. In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 that constitute a single pixel.

[0119] That is, at the position constituting the red unit pixel, a red phosphor 281 capable of converting blue light into red R light may be stacked on the blue semiconductor light emitting device, and at the position constituting the green unit pixel, a green phosphor 282 capable of converting blue light into green G light may be stacked on the blue semiconductor light emitting device. In addition, at the portion constituting the blue unit pixel, a blue semiconductor light emitting device may be used alone. In this case, the red R, green G, and blue B unit pixels may form one pixel.

[0120] However, the present invention is not limited thereto, and as described above, in a display device using a flip chip type light emitting device, other structures for realizing blue, red, and green may be used.

[0121] Referring to this embodiment again, the second electrode 240 is located between the semiconductor light emitting devices 250 and is electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be arranged in a plurality of columns, and the second electrode 240 is located between the columns of the semiconductor light emitting devices 250.

[0122] Since the distance between the semiconductor light emitting devices 250 constituting a single pixel is sufficiently large, the second electrode 240 may be located between the semiconductor light emitting devices 250 .

[0123] The second electrode 240 may be formed as a long bar-shaped electrode extending in one direction, and may be arranged in a direction perpendicular to the first electrode.

[0124] In addition, the second electrode 240 and the semiconductor light emitting device 250 may be electrically connected via a connecting electrode protruding from the second electrode 240. More specifically, the connecting electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a portion of the ohmic electrode by printing or evaporation. Thus, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 may be electrically connected.

[0125] As shown in the figure, the second electrode 240 may be located on the conductive adhesive layer 230. According to circumstances, a substrate 210 including silicon oxide (SiO x ) or a transparent insulating layer (not shown). In the case where the second electrode 240 is to be provided after the transparent insulating layer is formed, the second electrode 240 may be located on the transparent insulating layer. In addition, the second electrode 240 may also be formed separately from the conductive adhesive layer 230 or the transparent insulating layer.

[0126] If a transparent electrode such as ITO (Indium Tin Oxide) is used to set the second electrode 240 on the semiconductor light-emitting device 250, there is a problem of poor adhesion between the ITO material and the n-type semiconductor layer. Therefore, in the present invention, the second electrode 240 is set between the semiconductor light-emitting devices 250, so that there is an advantage that a transparent electrode such as ITO can be used without using it. Therefore, there is no restriction on the selection of transparent materials, and a conductive material with good adhesion to the n-type semiconductor layer can be used as a horizontal electrode, thereby improving the light extraction efficiency.

[0127] As shown in the figure, the partition wall 290 may be located between the semiconductor light emitting devices 250. That is, in order to separate the semiconductor light emitting devices 250 constituting a single pixel, the partition wall 290 may be arranged between the vertical semiconductor light emitting devices 250. In this case, the partition wall 290 may play a role in separating the single unit pixels from each other, and may be formed as a whole with the conductive adhesive layer 230. For example, the semiconductor light emitting device 250 may be inserted into the anisotropic conductive film, and the base member of the anisotropic conductive film may be formed as the partition wall.

[0128] In addition, if the base member of the anisotropic conductive film is black, the partition wall 290 can increase contrast while having a reflective property even without an additional black insulator.

[0129] As another example, an additional reflective partition wall may be provided as the partition wall 190. The partition wall 290 may include a black or white insulator according to the purpose of the display device.

[0130] If, in the case where the second electrode 240 is located on the conductive adhesive layer 230 just between the semiconductor light emitting devices 250, the partition wall 290 may be located between the vertical semiconductor light emitting device 250 and the second electrode 240. Therefore, a single unit pixel may be formed in a small size using the semiconductor light emitting device 250, and since the interval between the semiconductor light emitting devices 250 is relatively wide enough, the second electrode 240 may be located between the semiconductor light emitting devices 250, which has the effect of realizing a flexible display device with HD picture quality.

[0131] In addition, as shown in the figure, in order to improve the contrast, a black matrix 291 can be arranged between each phosphor. That is, the black matrix 291 can improve the contrast between light and dark.

[0132] As described above, the semiconductor light emitting device 250 is disposed on the conductive adhesive layer 230, thereby constituting a single pixel in the display device. Since the semiconductor light emitting device 250 has excellent brightness, it can constitute a single unit pixel even in a small size. Therefore, a full-color display in which a plurality of red R, green G, and blue B unit pixels constitute one pixel can be realized by the semiconductor light emitting device.

[0133] <Structure of a semiconductor light-emitting device having a magnetic layer for self-assembly>

[0134] Fig.10 FIG. 1 is a diagram schematically showing an embodiment of a method for assembling a semiconductor light emitting device to a display panel by a self-assembly method.

[0135] exist Fig.10 In the embodiment, an example in which a semiconductor light emitting device is assembled into a display panel by a self-assembly method utilizing an electromagnetic field is briefly described.

[0136] Reference Fig.10 , the semiconductor light emitting device 1104 may be put into a chamber 1300 filled with a fluid 1200 .

[0137] The semiconductor light emitting device 1104 may be implemented as Figure 4 The horizontal semiconductor light emitting device shown or Fig. 9The vertical semiconductor light emitting device shown. In addition, the semiconductor light emitting device 1104 may include a magnetic layer having a magnet. The magnetic layer may include a magnetic metal such as nickel (Ni). Since the semiconductor light emitting device 1104 inserted into the fluid includes a magnetic layer, it can be moved toward the panel 1100 and assembled to the panel 1100 under the action of the magnetic field generated by the assembly device 1000.

[0138] Then, the panel (or substrate) 1100 may be disposed on the chamber 1300. According to an embodiment, the panel 1100 may also be introduced into the chamber 1300.

[0139] A pair of assembly electrodes (not shown) corresponding to each semiconductor light emitting device 1104 to be assembled may be formed on the panel 1100. The assembly electrodes may be implemented as transparent electrodes (ITO) or may be implemented using other common materials. The assembly electrodes may be equivalent to a pair of assembly electrodes that release an electric field as a voltage is applied, so that the assembled semiconductor light emitting device 1104 is fixed to the panel 1100. The interval between the assembly electrodes is smaller than the width of the semiconductor light emitting device 1104 and the width of the combination hole 1102, so that the assembly position of the semiconductor light emitting device 1104 using the electric field can be fixed more precisely.

[0140] The panel 1100 is provided with a combination hole 1102 for combining a plurality of semiconductor light emitting devices 1104, and the surface formed with the combination hole 1102 can be in contact with the fluid 1200. The combination hole 1102 can guide the accurate assembly position of the semiconductor light emitting device 1104. For example, the combination hole 1102 can be formed by a partition wall (see Figure 3b 190) to form.

[0141] On the other hand, the coupling hole 1102 may have a shape and size corresponding to the shape of the semiconductor light emitting device 1104 to be assembled to the corresponding position, thereby preventing other semiconductor light emitting devices from being assembled to the coupling hole 1102 or assembling a plurality of semiconductor light emitting devices to the coupling hole 1102.

[0142] After the panel 1100 is configured, the assembly device 1000 including the magnet may be moved along with the panel 1100. In order to maximize the area covered by the magnetic field inside the fluid 1200, the assembly device 1000 may be moved in contact with the panel 1100. According to an embodiment, the assembly device 1000 may include a plurality of magnets, or may also include a magnet having a size corresponding to the panel 1100. In this case, the moving distance of the assembly device 1000 may be limited within a specified range.

[0143] Under the effect of the magnetic field generated by the assembling apparatus 1000 , the semiconductor light emitting device 1104 in the chamber 1300 may move toward the assembling apparatus 1000 .

[0144] The semiconductor light emitting device 1104 may be inserted into the coupling hole 1102 and contact the panel 1100 while moving toward the assembly apparatus 1000. For example, the coupling hole 1102 and / or the semiconductor light emitting device 1104 may be formed with a pattern or shape for contacting the n-type semiconductor layer of the semiconductor light emitting device 1104 with the pattern 1100.

[0145] In addition, the semiconductor light emitting device 1104 in contact with the panel 1100 can be fixed to the panel 1100 by the electric field applied by the assembly electrodes formed on the panel 1100 and will not be separated by the movement of the assembly apparatus 1000. Thus, the semiconductor light emitting device 1104 can be assembled to the panel 1100.

[0146] That is, by utilizing the above-mentioned electromagnetic field self-assembly method, the time required to assemble each of a plurality of semiconductor light-emitting devices onto a substrate can be greatly shortened, thereby enabling a large-area, high-pixel display to be realized more quickly and economically.

[0147] The semiconductor light emitting device 1104 may be a micro LED, and the assembly apparatus 1000 may include a micro LED large-area self-assembly multi-head.

[0148] Fig.11 It is a front view of the assembly system of this embodiment.

[0149] Fig.11 The illustrated assembly system may include an assembly device 1000 , a driving portion 1400 , and a supporting portion 1430 .

[0150] An example of the driving unit 1400 may be a robot that moves the assembling device 1000 .

[0151] The driving portion 1400 may include a Z-axis driving portion 1410 and a Y-axis driving portion 1420 .

[0152] The Z-axis driving unit 1410 may be disposed on the supporting unit 1430 , and may be connected to the assembling device 1000 to move the assembling device 1000 along the Z-axis (vertical direction).

[0153] The Y-axis driving unit 1420 may be disposed on the supporting unit 1430 , and may move the Z-axis driving unit 1410 along a Y-axis (horizontal direction) that is orthogonal to the Z-axis.

[0154] The driving part 1400 may move the assembling device 1000 in the vertical direction and the horizontal direction while being supported by the supporting part 1430 .

[0155] The support portion 1430 may include a left support frame 1440 and a right support frame 1450 .

[0156] The assembly device 1000 may be moved on the panel 1100 by the driving unit 1400. The assembly device 1000 may be moved on the panel 1100 along the Z axis (vertical direction) and the Y axis (horizontal direction) by the driving unit 1400.

[0157] The vibration generated in the assembling device 1000 may be transmitted to the driving part 1400 and the supporting part 1430 . The assembling device 1000 may include an anti-vibration system 1700 to minimize the vibration transmitted to the driving part 1400 and the supporting part 1430 .

[0158] The assembling device 1000 may include a main frame 1500 , a magnetic head 1600 , and a vibration isolator 1700 .

[0159] The main frame 1500 may support the magnetic head 1600 and the vibration isolator 1700 .

[0160] The main frame 1500 may be connected to the driving unit 1400 , and when the driving unit 1400 is driven, the magnetic head 1600 and the vibration isolator 1700 may be carried.

[0161] The main frame 1500 may be connected to the Z-axis driving part 1410 in the driving part 1400. The main frame 1500 may be provided at a lower position of the Z-axis driving part 1410 so as to be suspended from the Z-axis driving part 1410.

[0162] The magnetic head 1600 can be arranged on the main frame 1500, so that the semiconductor light emitting device 1104 (see Fig.10 ) magnetically assembled to panel 1100 (refer to Fig.10 ).

[0163] The magnetic head 1600 may include a magnet plate assembly 1610 and a plurality of driving mechanisms 1650 .

[0164] The magnet plate assembly 1610 may include a semiconductor light emitting device 1104 (see Fig.10 )Magnet 1644 exerts attractive force.

[0165] The plurality of driving mechanisms 1650 may be spaced apart from each other. The plurality of driving mechanisms 1650 may be connected to the magnet plate assemblies 1610, respectively.

[0166] The plurality of driving mechanisms 1650 may enable the magnet plate assembly 1610 to rotate along a circular track, and the assembling device 100 may be a multi-magnetic head including the plurality of driving mechanisms 1650 .

[0167] Even if the size and assembly area of ​​the panel 1100 increase, this head 100 can simultaneously assemble the panel 1100 over a large area. Even if the assembly area of ​​the panel 1100 increases, magnets can be configured only in the increased area, and the entire area of ​​the panel 1100 can be assembled simultaneously.

[0168] The vibration isolator 1700 may be disposed on the main frame 1500 and offset vibration of the magnetic head 1600. When the magnet plate assembly 1610 is rotated by the plurality of driving mechanisms 1650, the vibration isolator 1700 may include a workpiece (weight) for offsetting a force generated in a vertical direction of a rotation radius.

[0169] The vibration isolator 1700 can rotate a workpiece (WORK, a weight) on the same axis as the magnetic head 1600 to be synchronized with the eccentric angle of the magnetic head 1600 , thereby being able to generate a force opposite to the magnetic head 1600 .

[0170] The vibration isolator 1700 can minimize vibration generated from the magnetic head 1600 and transferred to the frame 1500 by minimizing the force transferred from the magnetic head 1600 to the main frame 1500 .

[0171] Fig.12 It is shown Fig.11 A side view of the assembly device shown, Fig.13 It is shown Fig.11 A perspective view of the assembly device shown, Fig.14 yes Fig.13 A perspective view of the vibration isolator shown, Fig.15 is a cross-sectional view showing the vibration isolator of this embodiment, Fig.16 is a cross-sectional view showing the magnetic head of this embodiment, Fig.17 : is a cross-sectional view showing the inside of the magnet plate assembly of this embodiment.

[0172] like Fig.12 and Fig.13 As shown, the main frame 1500 may include an inner frame 1510 and a side frame 1520 protruding from the inner frame 1510 .

[0173] The inner frame 1510 may be a central frame located between the pair of side frames 1520 .

[0174] The upper end 1512 of the inner frame 1510 may be fastened to the driving portion 1400 , in particular, the lower end of the Z-axis driving portion 1410 .

[0175] The inner frame 1510 may be a frame having an overall hexagonal shape. The front, back, left and right sides of the inner frame 1510 may be formed with openings 1514 , respectively.

[0176] A space 1515 may be formed inside the inner frame 1510 .

[0177] The inner frame 1510 may include a lower frame 1516 and an upper frame 1518 spaced apart from the lower frame 1516 in the Z-axis direction, and may include a column frame 1519 connecting the lower frame 1516 and the upper frame 1518 .

[0178] The side frame 1520 may be provided to protrude from a lower portion of the inner side frame 1510 in a horizontal direction.

[0179] The side frames 1520 may be provided in a pair and may be provided at left and right sides of the inner frame 1510 , respectively.

[0180] The pair of side frames 1520 may include a left side frame 1522 and a right side frame 1524 disposed with the inner side frame 1520 interposed therebetween.

[0181] The left side frame 1522 and the right side frame 1524 may be spaced apart from each other in the left-right direction.

[0182] The vibration isolator 1700 may be disposed in the space 1515 inside the inner frame 1510 , and each of the plurality of driving mechanisms 1650 may be disposed in the side frame 1520 .

[0183] As an example, the magnetic head 1600 may include a total of four driving mechanisms 1650 . In this case, two driving mechanisms 1650 may be disposed on the left frame 1522 , and another two driving mechanisms 1650 may be disposed on the right frame 1524 .

[0184] The vibration isolator 1700 may include: an anti-vibration frame 1710 fastened to the main frame 1500; a bracket 1720 disposed on the anti-vibration frame 1710; an anti-vibration motor 1730 disposed on the bracket 1720; an anti-vibration shaft 1740 rotated by the anti-vibration motor 1730; and a counterweight 1750 eccentrically connected to the anti-vibration shaft 1740.

[0185] like Fig.14 As shown, the anti-vibration frame 1710 may include a central body 1712 and a pair of side bodies 1714 , 1716 .

[0186] The central body 1712 may be formed long in the left-right direction.

[0187] The pair of side bodies 1714, 1716 may be formed to be shorter than the central body 1712. The pair of side bodies 1714, 1716 may include a left side body 1714 and a right side body 1716.

[0188] like Fig.13As shown, the left body 1714 can be fastened to the left side portion of the central frame 150, and the right body 1716 can be fastened to the right side portion of the central frame 150.

[0189] The left body 1714 and the right body 1716 may be fastened to the lower frame 1516 of the central frame 150 .

[0190] The bracket 1720 may be fastened to the central body 1712. The bracket 1720 may support the anti-vibration motor 1730 so as to be spaced apart from the central body 1720.

[0191] The upper portion of the anti-vibration shaft 1740 may be connected to the anti-vibration motor 1730, and the anti-vibration shaft 1740 may rotate when the anti-vibration motor 1730 is driven. The anti-vibration shaft 1740 may be composed of a plurality of components, and may include at least one coupler.

[0192] The anti-vibration shaft 1740 may penetrate the central body 1712 of the anti-vibration frame 1710 .

[0193] The counterweight 1750 may be located at a lower portion of the central body 1712 of the anti-vibration frame 1710 and may be connected to the anti-vibration shaft 1740 .

[0194] The counterweight 1750 may be connected to the outside of the rotation center axis 1742 in the anti-vibration shaft 1740 , and when the anti-vibration shaft 1740 rotates around the rotation center axis 1742 , the counterweight 1750 may rotate along a circular trajectory.

[0195] The counterweight 1750 may include a connection shaft 1752 eccentrically connected to the anti-vibration shaft 1740. The connection shaft 1752 may be connected to the outside of the rotation center axis 1742 of the anti-vibration shaft 1740.

[0196] The counterweight 1750 and the anti-vibration shaft 1740 may have a second eccentric distance r2. The second eccentric distance r2 may be defined as a horizontal distance between a central axis 1754 of the connecting shaft 1752 and a rotation central axis 1742 of the anti-vibration shaft 1740.

[0197] Below, refer to Fig.16 , the detailed structure of the driving mechanism is explained.

[0198] like Fig.16 As shown, each of the multiple driving mechanisms 1650 may include: a bearing 1660, which is arranged on the magnet plate assembly 1610; an eccentric shaft 1670, which is supported on the bearing 1660; a lower coupling 1672, which is eccentrically connected to the eccentric shaft 1670; a driving shaft 1680, which is connected to the lower coupling 1680; an upper coupling 1682, which is connected to the driving shaft 1680; and a head motor 1690, which rotates the upper coupling 1682.

[0199] The eccentric shaft 1670 may be connected outside the rotation center of the lower coupling 1672 .

[0200] The eccentric shaft 1670 and the driving shaft 1680 may have a first eccentric distance r1. Here, the first eccentric distance r1 may be defined as a horizontal distance between a central axis 1672 of the eccentric shaft 1670 and a rotation central axis 1684 of the driving shaft 1680.

[0201] The head motor 1690 may be mounted to a head bracket 1692 provided on the side frame 1520 of the frame 1500. The head motor 1690 may be disposed above the side frame 1520 and spaced apart from the side frame 1520.

[0202] On the other hand, the vibration-proof shaft 1740 of the vibration-proof device 1700 and the driving shaft 1680 of the driving mechanism 1650 may be arranged side by side, and the rotation direction of the vibration-proof shaft 1740 and the rotation direction of the driving shaft 1680 may be the same.

[0203] When the anti-vibration shaft 174 rotates in the clockwise direction, the driving shaft 1680 can rotate in the clockwise direction, and when the anti-vibration shaft 174 rotates in the counterclockwise direction, the driving shaft 1680 can rotate in the counterclockwise direction.

[0204] In addition, the second eccentric distance r2 (see Fig.15 ) may be greater than the first eccentric distance r1 (refer to Fig.16 ).

[0205] Below, refer to Fig.17 , the detailed structure of the magnet plate assembly is described.

[0206] A magnet is housed inside the magnet plate assembly 1610 , and the magnet plate assembly 1610 may be composed of an assembly of at least one magnet and a plurality of plates.

[0207] like Fig.17 As shown, the magnet plate assembly 1610 may include a bearing plate 1620, a nutating magnet plate 1630, and an assembling magnet plate 1640. The bearing plate 1620, the nutating magnet plate 1630, and the assembling magnet plate 1640 may be configured to overlap each other along the Z-axis direction.

[0208] The bearing plate 1620 may be mounted with a bearing 1660. The bearing 1660 may include an outer ring and an inner ring. The inner ring of the bearing 1660 may be fastened to the eccentric shaft 1670 described later by fastening members such as screws, and the outer ring of the bearing 1660 may be fastened to the bearing plate 1620 by fastening members such as screws.

[0209] The interlocking magnet plate 1630 may be disposed on the bottom surface of the bearing plate 1620. The interlocking magnet plate 1630 may accommodate an interlocking magnet 1632.

[0210] The assembly magnet plate 1640 may be disposed on the bottom surface of the joint magnet plate 1630 .

[0211] The assembly magnet plate 1640 may contain a holding magnet 1642 and an assembly magnet 1644 .

[0212] The assembly magnet plate 1640 may be formed with a space 1646 for accommodating the holding magnet 1642 and the assembly magnet 1644 .

[0213] An opening portion opened in the up-down direction may be formed at the lower side of the space 1646 of the assembly magnet plate 1640, and the assembly magnet 1644 may pass through the opening portion. The area of ​​the opening portion may be smaller than the area of ​​the space.

[0214] A locking platform may protrude from the upper peripheral edge of the assembling magnet 1644, and the locking platform of the assembling magnet 1644 may be hooked by the peripheral edge of the opening in the lower direction.

[0215] The lower portion of the assembly magnet 1644 may protrude toward the lower portion of the opening.

[0216] The lower end of the assembling magnet 1644 may be in contact with the top surface of the panel 1100 .

[0217] The cross-sections of the holding magnet 1642 and the assembling magnet 1644 facing each other can have the same polarity, and a repulsive force acts between the holding magnet 1642 and the assembling magnet 1644, so that the holding magnet 1642 can be separated from the assembling magnet 1644 by a specified distance without other force applied from the outside.

[0218] The holding magnet 1642 and the assembly magnet 1644 can function as a buffer module. The holding magnet 1642 can be a buffer magnet capable of buffering the assembly magnet 1644. The assembly magnet 1642 can be a magnet that applies an attractive force to the semiconductor light emitting device 1104.

[0219] Even if the contact surface of the panel 1100 that contacts the assembly device 1000 is uneven due to curvature or the like, the assembly magnet 1644 can smoothly contact the contact surface of the panel 1100 .

[0220] Fig.18 1 is a diagram illustrating the vibration canceling principle of the vibration isolator of the present embodiment.

[0221] The magnetic head 1600 can move the magnet plate assembly 1610 along a first circular trajectory. The first circular trajectory is a circular trajectory with a first eccentric distance r1 as a first radius.

[0222] The vibration isolator 1700 may be located on the upper side of the magnet plate assembly 1610, and may enable the weight 1750 to move along a second circular trajectory. The second circular trajectory is a circular trajectory with a second eccentric distance r2 as a second radius.

[0223] The magnetic head 1600 and the vibration isolator 1700 can move the phases (positions) of the magnet plate assembly 1610 and the weight 1750 in opposite directions.

[0224] For example, Fig.18 As shown, when the magnet plate assembly 1610 moves in the order of 1->2->3->4, the weight 1750 may move in the order of 1′->2′->3′->4′ in the reverse phase of the magnet plate assembly 1610 .

[0225] For example, when the magnet plate assembly 1610 is located at the rightmost side in the first circular trajectory, the counterweight 1750 may be located at the leftmost side in the second circular trajectory. When the magnet plate assembly 1610 is located at the rearmost side in the first circular trajectory, the counterweight 1750 may be located at the frontmost side in the second circular trajectory. When the magnet plate assembly 1610 is located at the leftmost side in the first circular trajectory, the counterweight 1750 may be located at the rightmost side in the second circular trajectory. When the magnet plate assembly 1610 is located at the frontmost side in the first circular trajectory, the counterweight 1750 may be located at the rearmost side in the second circular trajectory.

[0226] The magnetic head 1600 and the vibration isolator 1700 can move the magnet plate assembly 1600 and the weight 1650 so that the force F1 generated when the magnet plate assembly 1600 rotates and the force F2 generated when the weight 1650 rotates are consistent.

[0227] The weight of the magnetic head 1600 may be m1, in which case the force F1 generated when the magnet plate assembly 1600 rotates may be m1×a1. Here, a1 may be the acceleration of the magnet plate assembly 1600, and in order to increase a1, r1 needs to be increased.

[0228] The weight of the vibration isolator 1700 may be m2, in which case the force F2 generated when the counterweight 1650 rotates may be m2×a2. Here, a2 may be the acceleration of the counterweight 1650, and in order to increase a2, r2 needs to be increased.

[0229] In the assembly device 1000, the two forces F1 and F2 are preferably equal, and in order to minimize m2, r2 is preferably increased. That is, r2 is preferably greater than r1.

[0230] The above description is only for illustrating the technical concept of the present invention, and a person skilled in the art to which the present invention belongs may make various modifications and variations without departing from the essential characteristics of the present invention.

[0231] Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of ​​the present invention but to explain the technical idea, and the scope of the technical idea of ​​the present invention is not limited by these embodiments.

[0232] The protection scope of the present invention should be interpreted by the appended claims, and all technical ideas within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

Claims

1. An assembly device, wherein: include: Main frame; A magnetic head, arranged on the main frame, enables the semiconductor light emitting device to be magnetically assembled to the panel; as well as A vibration isolator is disposed on the main frame and offsets the vibration of the magnetic head. The vibration isolator comprises: an anti-vibration frame, fastened to the main frame; A bracket, arranged on the anti-vibration frame; an anti-vibration motor, arranged on the bracket; an anti-vibration shaft rotated by the anti-vibration motor; and A counterweight is eccentrically connected to the anti-vibration shaft.

2. The assembly device according to claim 1, wherein: The magnetic head includes a magnet plate assembly, the magnet plate assembly includes a magnet that applies attractive force to the semiconductor light emitting device, and the counterweight is located on the magnet plate assembly.

3. The assembly device according to claim 2, wherein: The magnetic head moves the magnet plate assembly along a first circular trajectory, The vibration isolator moves the counterweight along a second circular trajectory, The first circular trajectory has a first radius, The second circular trajectory has a second radius, The second radius is greater than the first radius.

4. The assembly device according to claim 1, wherein: The magnetic head comprises: a magnet plate assembly; and A plurality of driving mechanisms are connected to the magnet plate assembly and are separated from each other.

5. The assembly device according to claim 4, wherein: The main framework includes: inner frame; and a side frame protruding from the inner side frame; The vibration isolator is arranged inside the inner frame, Each of the plurality of driving mechanisms is disposed on the side frame.

6. The assembly device according to claim 4, wherein: Each of the plurality of drive mechanisms comprises: A bearing, disposed on the magnet plate assembly; an eccentric shaft supported by the bearing; A lower coupling for eccentric connection of the eccentric shaft; A driving shaft connected to the lower coupling; an upper coupling connected to the drive shaft; and The head motor rotates the upper coupling.

7. The assembly device according to claim 6, wherein: The eccentric distance between the counterweight and the anti-vibration shaft is greater than the eccentric distance between the eccentric shaft and the driving shaft.

8. The assembly device according to claim 6, wherein: The anti-vibration shaft is arranged side by side with the driving shaft.

9. The assembly device according to claim 6, wherein: The rotation direction of the anti-vibration shaft is the same as the rotation direction of the driving shaft.

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