Data rereading method, readable storage medium and electronic device

Abstract

The present invention discloses a data rereading method, a readable storage medium and an electronic device. A target rereading voltage table is obtained according to an acquired initial rereading voltage table, a starting position of the target rereading voltage table is obtained according to a rereading request, and the offset voltages in the target rereading voltage table are traversed in sequence from the starting position. For the traversed target offset voltage, the target offset voltage is used to reread and correct the data that needs to be corrected. If the error correction result is that the error correction is successful, the starting position is updated using the position of the target offset voltage, and the traversal is stopped to prepare for the next data rereading. In this way, the target rereading voltage table is obtained according to the initial rereading voltage table, and the starting position of the target rereading voltage table is updated after each successful error correction. In most scenarios, when the data characteristics are not much different, the probability of successful error correction using the rereading voltage value is higher, the number of rereading times is reduced, and the data error correction efficiency is improved, thereby effectively improving the read operation performance.

Description

Technical Field

[0001] The present invention relates to the field of memory technology, and in particular to a data rereading method, a readable storage medium and an electronic device. Background Art

[0002] The Read Retry mechanism refers to reading data by resetting the read voltage using the offset value in the Retry Table. Because multiple attempts are required until the read succeeds, the reread operation will increase the time to read data, resulting in an increase in the overall read operation delay, affecting the read operation performance of the storage device. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a data re-reading method, a readable storage medium and an electronic device, which can effectively improve the reading operation performance.

[0004] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0005] A data re-reading method comprises the steps of:

[0006] Acquire an initial reread voltage table, and obtain a target reread voltage table according to the initial reread voltage table;

[0007] receiving a reread request, wherein the reread request includes data to be corrected;

[0008] Acquire a starting position of the target reread voltage table according to the reread request;

[0009] Starting from the starting position, sequentially traverse the offset voltages in the target re-reading voltage table;

[0010] For the traversed target offset voltage, reread and correct the to-be-corrected data using the target offset voltage to obtain an error correction result;

[0011] If the error correction result is a successful error correction, the starting position is updated using the position of the target offset voltage, and the traversal is stopped, and the step of receiving the reread request is returned to be executed. If the error correction result is a failed error correction, other offset voltages that have not been traversed in the target reread voltage table are traversed in sequence until the error correction is successful.

[0012] In order to solve the above technical problems, another technical solution adopted by the present invention is:

[0013] A data re-reading device, comprising:

[0014] A reread voltage table acquisition module, used to acquire an initial reread voltage table, and obtain a target reread voltage table according to the initial reread voltage table;

[0015] A request receiving module, used for receiving a reread request, wherein the reread request includes data to be corrected;

[0016] A data acquisition module, used for acquiring a starting position of the target reread voltage table according to the reread request;

[0017] A data error correction module, used for sequentially traversing the offset voltages in the target re-read voltage table starting from the starting position;

[0018] For the traversed target offset voltage, reread and correct the to-be-corrected data using the target offset voltage to obtain an error correction result;

[0019] If the error correction result is a successful error correction, the starting position is updated using the position of the target offset voltage, and the traversal is stopped, and the step of receiving the reread request is returned to be executed. If the error correction result is a failed error correction, other offset voltages that have not been traversed in the target reread voltage table are traversed in sequence until the error correction is successful.

[0020] In order to solve the above technical problems, another technical solution adopted by the present invention is:

[0021] A computer-readable storage medium stores a computer program, which implements each step of the above-mentioned data rereading method when executed by a processor.

[0022] In order to solve the above technical problems, another technical solution adopted by the present invention is:

[0023] An electronic device comprises a memory, a processor and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, each step in the above-mentioned data rereading method is implemented.

[0024] The beneficial effects of the present invention are as follows: a target reread voltage table is obtained according to an acquired initial reread voltage table, a starting position of the target reread voltage table is obtained according to a reread request, and the offset voltages in the target reread voltage table are traversed in sequence from the starting position. For the traversed target offset voltage, the target offset voltage is used to reread and correct the data that needs to be corrected (i.e., the data to be corrected). If the correction result is a successful correction, the starting position is updated using the position of the target offset voltage, and the traversal is stopped to prepare for the next data rereading, thereby obtaining the target reread voltage table according to the initial reread voltage table, and the starting position of the target reread voltage table is updated after each successful correction. The updated starting position records the reread voltage value after the last successful correction. In most scenarios, when the data characteristics are not much different, the probability of successful correction using the reread voltage value is higher, the number of rereads is reduced, and the data correction efficiency is improved, thereby effectively improving the read operation performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A flowchart of a data re-reading method according to an embodiment of the present invention;

[0026] Figure 2 A schematic diagram of the structure of a data re-reading device according to an embodiment of the present invention;

[0027] Figure 3 The figure is a schematic diagram of the structure of an electronic device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0028] In order to explain the technical content, achieved objectives and effects of the present invention in detail, the following is an explanation in combination with the implementation modes and the accompanying drawings.

[0029] Please refer to Figure 1 , a data re-reading method, comprising the steps of:

[0030] Acquire an initial reread voltage table, and obtain a target reread voltage table according to the initial reread voltage table;

[0031] receiving a reread request, wherein the reread request includes data to be corrected;

[0032] Acquire a starting position of the target reread voltage table according to the reread request;

[0033] Starting from the starting position, sequentially traverse the offset voltages in the target re-reading voltage table;

[0034] For the traversed target offset voltage, reread and correct the to-be-corrected data using the target offset voltage to obtain an error correction result;

[0035] If the error correction result is a successful error correction, the starting position is updated using the position of the target offset voltage, and the traversal is stopped, and the step of receiving the reread request is returned to be executed. If the error correction result is a failed error correction, other offset voltages that have not been traversed in the target reread voltage table are traversed in sequence until the error correction is successful.

[0036] From the above description, it can be seen that the beneficial effects of the present invention are: obtaining a target reread voltage table based on the obtained initial reread voltage table, obtaining the starting position of the target reread voltage table based on the reread request, traversing the offset voltages in the target reread voltage table from the starting position in sequence, and for the traversed target offset voltage, using the target offset voltage to reread and correct the data that needs to be corrected (i.e., the data to be corrected), if the error correction result is a successful error correction, then using the position of the target offset voltage to update the starting position, and stopping the traversal to prepare for the next data reread, thereby obtaining the target reread voltage table based on the initial reread voltage table, and updating the starting position of the target reread voltage table after each successful error correction, the updated starting position records the reread voltage value after the last successful error correction, and in most scenarios, when the data characteristics are not much different, the probability of successful error correction using this reread voltage value is higher, the number of rereads is reduced, and the data error correction efficiency is improved, thereby effectively improving the read operation performance.

[0037] Further, obtaining a target reread voltage table according to the initial reread voltage table includes:

[0038] The offset voltages in the initial re-read voltage table are sorted in the order of alternating positive and negative and increasing absolute value to obtain a target re-read voltage table.

[0039] From the above description, it can be seen that the offset voltages in the initial reread voltage table are sorted in the order of alternating positive and negative and the absolute value from small to large to obtain the target reread voltage table. The positive and negative of the offset voltage represent left offset and right offset. The larger the absolute value of the offset voltage, the larger the offset reference value. Sorting in the order of alternating positive and negative and the absolute value from small to large can find the offset voltage that can successfully correct the error more quickly than random sorting, thereby improving the error correction efficiency.

[0040] Further, obtaining a target reread voltage table according to the initial reread voltage table includes:

[0041] Construct different reading and writing scenarios;

[0042] In different read and write scenarios, the initial re-read voltage table is traversed respectively, and the probability of successful error correction of each offset voltage in the initial re-read voltage table is counted;

[0043] Calculate the hit probability of each offset voltage in the initial re-read voltage table according to the probability of successful error correction and the weights corresponding to different read and write scenarios;

[0044] The initial re-read voltage table is sorted in descending order of the hit probability to obtain a target re-read voltage table.

[0045] From the above description, it can be seen that in different read and write scenarios, the initial reread voltage table is traversed respectively, and the probability of successful error correction of each offset voltage in the initial reread voltage table is counted. The hit probability of each offset voltage in the initial reread voltage table is calculated according to the probability of successful error correction and the weights corresponding to different read and write scenarios. The initial reread voltage table is sorted in order from large to small according to the hit probability to obtain the target reread voltage table. In this way, for specific scenarios, the offset voltage that can be successfully corrected is always at the front position, which further improves the error correction efficiency and improves the read operation performance.

[0046] Furthermore, the construction of different reading and writing scenarios includes:

[0047] Construct high-temperature writing and low-temperature reading scenarios, low-temperature writing and high-temperature reading scenarios, high-temperature data retention scenarios, and high-temperature data passing through a furnace scenarios. The temperature for high-temperature reading and writing is 85°C, the temperature for low-temperature reading and writing is -40°C, the temperature for high-temperature data retention is 125°C, and the temperature for high-temperature data passing through a furnace is 260°C.

[0048] From the above description, it can be seen that constructing high-temperature writing and low-temperature reading scenarios, low-temperature writing and high-temperature reading scenarios, high-temperature data retention scenarios, and high-temperature data furnace passing scenarios covers most of the reading and writing scenarios, which is conducive to more comprehensively improving the error correction efficiency.

[0049] Further, the statistically calculating the probability of successful error correction of each offset voltage in the initial re-read voltage table includes:

[0050] According to experimental data, the probability of successful error correction of each offset voltage in the initial re-read voltage table in the high temperature writing and low temperature reading scenario, the low temperature writing and high temperature reading scenario, the high temperature data retention scenario and the high temperature data furnace passing scenario is respectively counted.

[0051] From the above description, it can be seen that according to the experimental data, the probability of successful error correction of each offset voltage in the initial re-read voltage table in the high-temperature writing and low-temperature reading scenario, the low-temperature writing and high-temperature reading scenario, the high-temperature data retention scenario and the high-temperature data passing through the furnace scenario is respectively counted, so as to generate corresponding different re-read voltage tables for different scenarios, which more effectively improves the data error correction efficiency and thus effectively improves the read operation performance.

[0052] Further, the initial re-read voltage table is sorted in descending order according to the hit probability to obtain a target re-read voltage table, including:

[0053] The initial re-read voltage table is sorted in descending order of the hit probability to obtain a high-temperature write and low-temperature read sorting table. , high temperature data retention sort table , High temperature data furnace sorting table And low temperature write high temperature read sort table ;

[0054] The high temperature write and low temperature read sort table , the high temperature data is maintained in a sorted table , the high temperature data furnace sorting table And the low temperature write high temperature read sorting table according to The order of the combination into a sorted table , specifically:

[0055] ,in ;

[0056] In the formula, Indicates the symbol for rounding down, i indicates The i-th data in, j represents The jth data in , n=1, 2, 3, 4;

[0057] Without changing the sort table Remove the sort table in the order Repeated values ​​in get the target reread voltage table with sorting , specifically:

[0058] .

[0059] From the above description, it can be seen that based on the constructed high-temperature writing and low-temperature reading scenarios, low-temperature writing and high-temperature reading scenarios, high-temperature data retention scenarios and high-temperature data furnace passing scenarios, obtaining a sorted target reread voltage table can further improve the reread efficiency to ensure the read operation performance in these specific scenarios.

[0060] Furthermore, before receiving the reread request, the method further includes:

[0061] The first row of the target re-read voltage table is set as the start position of the target re-read voltage table.

[0062] As can be seen from the above description, the starting position is initially the first row of the target reread voltage table, ensuring that the first data reread can be performed in the order of the target reread voltage table.

[0063] Further, the step of sequentially traversing other offset voltages that have not been traversed in the target re-read voltage table until the error correction is successful includes:

[0064] Determine other offset voltages around the offset voltage at the starting position in the target reread voltage table;

[0065] Traversing the other surrounding offset voltages until error correction is successful;

[0066] If the error correction fails when using the other surrounding offset voltages, the remaining offset voltages except the other surrounding offset voltages are traversed in sequence until the error correction succeeds.

[0067] It can be seen from the above description that when traversing other offset voltages that have not been traversed in the target re-read voltage table, preferentially traversing other offset voltages around the offset voltage at the starting position can effectively improve error correction efficiency and ensure read operation performance.

[0068] Please refer to Figure 2 Another embodiment of the present invention provides a data re-reading device, comprising:

[0069] A reread voltage table acquisition module, used to acquire an initial reread voltage table, and obtain a target reread voltage table according to the initial reread voltage table;

[0070] A request receiving module, used for receiving a reread request, wherein the reread request includes data to be corrected;

[0071] A data acquisition module, used for acquiring a starting position of the target reread voltage table according to the reread request;

[0072] A data error correction module, used for sequentially traversing the offset voltages in the target re-read voltage table starting from the starting position;

[0073] For the traversed target offset voltage, reread and correct the to-be-corrected data using the target offset voltage to obtain an error correction result;

[0074] If the error correction result is a successful error correction, the starting position is updated using the position of the target offset voltage, and the traversal is stopped, and the step of receiving the reread request is returned to be executed. If the error correction result is a failed error correction, other offset voltages that have not been traversed in the target reread voltage table are traversed in sequence until the error correction is successful.

[0075] Another embodiment of the present invention provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, each step in the above-mentioned data rereading method is implemented.

[0076] Please refer to Figure 3 Another embodiment of the present invention provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements each step of the above-mentioned data rereading method when executing the computer program.

[0077] The data re-reading method, readable storage medium and electronic device of the present invention can be applied to data re-reading scenarios, and are described below through specific implementation methods:

[0078] Please refer to Figure 1 , Embodiment 1 of the present invention is:

[0079] A data re-reading method comprises the steps of:

[0080] S0. Obtain an initial reread voltage table, and obtain a target reread voltage table according to the initial reread voltage table.

[0081] In an optional implementation, obtaining a target reread voltage table according to the initial reread voltage table includes:

[0082] The offset voltages in the initial re-read voltage table are sorted in the order of alternating positive and negative and increasing absolute value to obtain a target re-read voltage table.

[0083] In another optional implementation, obtaining a target reread voltage table according to the initial reread voltage table includes:

[0084] Construct different read-write scenarios; in different read-write scenarios, traverse the initial reread voltage table respectively, and count the probability of successful error correction of each offset voltage in the initial reread voltage table; calculate the hit probability of each offset voltage in the initial reread voltage table according to the probability of successful error correction and the weights corresponding to different read-write scenarios; sort the initial reread voltage table in order of the hit probability from large to small to obtain a target reread voltage table.

[0085] The construction of different reading and writing scenarios includes:

[0086] Construct high-temperature writing and low-temperature reading scenarios, low-temperature writing and high-temperature reading scenarios, high-temperature data retention scenarios, and high-temperature data furnace passing scenarios. In an optional implementation, the temperature for high-temperature reading and writing is 85°C, the temperature for low-temperature reading and writing is -40°C, the temperature for high-temperature data retention is 125°C, and the temperature for high-temperature data furnace passing is 260°C.

[0087] The statistically analyzing the probability of successful error correction of each offset voltage in the initial re-read voltage table includes:

[0088] According to experimental data, the probability of successful error correction of each offset voltage in the initial re-read voltage table in the high temperature writing and low temperature reading scenario, the low temperature writing and high temperature reading scenario, the high temperature data retention scenario and the high temperature data furnace passing scenario is respectively counted.

[0089] The step of sorting the initial re-read voltage table in descending order of the hit probability to obtain a target re-read voltage table includes:

[0090] The initial re-read voltage table is sorted in descending order of the hit probability to obtain a high-temperature write and low-temperature read sorting table. , high temperature data retention sort table , High temperature data furnace sorting table And low temperature write high temperature read sort table ;

[0091] The high temperature write and low temperature read sort table , the high temperature data is maintained in a sorted table , the high temperature data furnace sorting table And the low temperature write high temperature read sorting table according to The order of the combination into a sorted table , specifically:

[0092] ,in ;

[0093] In the formula, Indicates the symbol for rounding down, i indicates The i-th data in, j represents The jth data in , n=1, 2, 3, 4;

[0094] Without changing the sort table Remove the sort table in the order Repeated values ​​in get the target reread voltage table with sorting , specifically:

[0095] .

[0096] The weights corresponding to different read and write scenarios can be set according to actual conditions. For example, if a device works in a high-temperature environment for a long time, the weight of the high-temperature data retention scenario can be increased.

[0097] That is, two methods of determining the reread voltage table are provided. One is to sort the offset voltages in the initial reread voltage table in the order of alternating positive and negative and with the absolute value from small to large. The other is to sort the initial reread voltage table in the order of hit probability from large to small for different read and write scenarios. Flexible selection can be made according to actual conditions.

[0098] In an optional implementation, the initial re-read voltage table is based on values ​​of a re-read voltage table provided in a NAND Flash (a non-volatile memory based on NAND technology) data sheet.

[0099] S1. Receive a reread request, where the reread request includes data to be corrected.

[0100] In an optional implementation manner, after S0 and before S1, the following is further included:

[0101] The first row of the target re-read voltage table is set as the start position of the target re-read voltage table.

[0102] S2. Acquire a starting position of the target reread voltage table according to the reread request.

[0103] S3. Starting from the starting position, traverse the offset voltages in the target re-reading voltage table in sequence.

[0104] S31 . For the traversed target offset voltage, use the target offset voltage to reread and correct the data to be corrected, and obtain an error correction result.

[0105] Specifically, for the traversed target offset voltage, the target offset voltage is used to set the read voltage to reread and correct the to-be-corrected data, and an error correction result is obtained.

[0106] S32. If the error correction result is a successful error correction, the starting position is updated using the position of the target offset voltage, and the traversal is stopped, and the process returns to S1. If the error correction result is a failed error correction, the other offset voltages that have not been traversed in the target re-read voltage table are traversed in sequence until the error correction is successful.

[0107] In an optional implementation, while executing the updating of the starting position using the position of the target offset voltage, the method further includes:

[0108] Reset the read voltage to the default value to ensure that each read data is read with the default voltage first.

[0109] In an optional implementation, sequentially traversing other offset voltages that have not been traversed in the target re-read voltage table until the error correction is successful includes:

[0110] Starting from the first row of the target re-read voltage table, other offset voltages that have not been traversed in the target re-read voltage table are traversed in sequence until the error correction is successful.

[0111] In an optional implementation, sequentially traversing other offset voltages that have not been traversed in the target re-read voltage table until the error correction is successful includes:

[0112] Determine other offset voltages around the offset voltage at the starting position in the target reread voltage table; traverse the other surrounding offset voltages until error correction is successful; if error correction fails using the other surrounding offset voltages, traverse the remaining other offset voltages except the other surrounding offset voltages in turn until error correction is successful.

[0113] The other surrounding offset voltages are four offset voltages above, below, left and right of the offset voltage at the starting position.

[0114] Please refer to Figure 2 , Embodiment 2 of the present invention is:

[0115] A data re-reading device, comprising:

[0116] A reread voltage table acquisition module, used to acquire an initial reread voltage table, and obtain a target reread voltage table according to the initial reread voltage table;

[0117] A request receiving module, used for receiving a reread request, wherein the reread request includes data to be corrected;

[0118] A data acquisition module, used for acquiring a starting position of the target reread voltage table according to the reread request;

[0119] A data error correction module, used for sequentially traversing the offset voltages in the target re-read voltage table starting from the starting position;

[0120] For the traversed target offset voltage, reread and correct the to-be-corrected data using the target offset voltage to obtain an error correction result;

[0121] If the error correction result is a successful error correction, the starting position is updated using the position of the target offset voltage, and the traversal is stopped, and the step of receiving the reread request is returned to be executed. If the error correction result is a failed error correction, other offset voltages that have not been traversed in the target reread voltage table are traversed in sequence until the error correction is successful.

[0122] Embodiment 3

[0123] A computer-readable storage medium stores a computer program, which can implement the steps of the data rereading method in the first embodiment when the computer program is executed by a processor.

[0124] Embodiment 4

[0125] Please refer to Figure 3 , an electronic device, comprising a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor implements each step of the data rereading method in the first embodiment when executing the computer program.

[0126] In summary, the data rereading method, readable storage medium and electronic device provided by the present invention obtain a target rereading voltage table according to the obtained initial rereading voltage table, obtain the starting position of the target rereading voltage table according to the rereading request, and traverse the offset voltages in the target rereading voltage table from the starting position in sequence. For the traversed target offset voltage, the target offset voltage is used to reread and correct the data that needs to be corrected (i.e., the data to be corrected). If the error correction result is that the error correction is successful, the starting position is updated using the position of the target offset voltage, and the traversal is stopped to prepare for the next data rereading, thereby obtaining the target rereading voltage table according to the initial rereading voltage table, and the starting position of the target rereading voltage table is updated after each successful error correction. The updated starting position records the rereading voltage value after the last successful error correction. In most scenarios, when the data characteristics are not much different, the rereading voltage value is used for correction. The probability of successful error correction is higher, the number of rereads is reduced, and the efficiency of data error correction is improved, thereby effectively improving the read operation performance; in addition, in different read and write scenarios, the initial reread voltage table is traversed separately, and the probability of successful error correction of each offset voltage in the initial reread voltage table is counted, and the hit probability of each offset voltage in the initial reread voltage table is calculated according to the probability of successful error correction and the weights corresponding to different read and write scenarios, and the initial reread voltage table is sorted in order from large to small according to the hit probability to obtain the target reread voltage table, so that for specific scenarios, the offset voltage that can be successfully corrected is always at the front position, further improving the error correction efficiency and improving the read operation performance; and, when traversing other offset voltages that have not been traversed in the target reread voltage table, other offset voltages around the offset voltage at the starting position are preferentially traversed, which can effectively improve the error correction efficiency and ensure the read operation performance.

[0127] In the above embodiments provided in the present application, it should be understood that the disclosed methods, devices, computer-readable storage media, and electronic devices can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the modules is only a logical function division. There may be other division methods in actual implementation, such as multiple components or modules can be combined or integrated into another device, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or components or modules, which can be electrical, mechanical or other forms.

[0128] The components described as separate components may or may not be physically separated, and the components shown as components may or may not be physical modules, that is, they may be located in one place or distributed on multiple network modules. Some or all of the components may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0129] In addition, each functional module in each embodiment of the present invention may be integrated into one processing module, or each component may exist physically separately, or two or more modules may be integrated into one module. The above integrated modules may be implemented in the form of hardware or in the form of software functional modules.

[0130] If the integrated module is implemented in the form of a software function module and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

[0131] It should be noted that, for the convenience of description, the aforementioned method embodiments are all described as a series of action combinations, but those skilled in the art should be aware that the present invention is not limited by the described action sequence, because according to the present invention, certain steps can be performed in other sequences or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the present invention.

[0132] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0133] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent transformations made using the contents of the present invention's specification and drawings, or directly or indirectly applied in related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A data re-reading method, characterized in that: Includes steps: Acquire an initial reread voltage table, and obtain a target reread voltage table according to the initial reread voltage table; receiving a reread request, wherein the reread request includes data to be corrected; Acquire a starting position of the target reread voltage table according to the reread request; Starting from the starting position, sequentially traverse the offset voltages in the target re-reading voltage table; For the traversed target offset voltage, reread and correct the to-be-corrected data using the target offset voltage to obtain an error correction result; If the error correction result is that the error correction is successful, the starting position is updated using the position of the target offset voltage, and the traversal is stopped, and the step of receiving the reread request is returned to be executed; if the error correction result is that the error correction fails, other offset voltages that have not been traversed in the target reread voltage table are traversed in sequence until the error correction is successful; The obtaining of a target reread voltage table according to the initial reread voltage table comprises: The offset voltages in the initial re-read voltage table are sorted in the order of alternating positive and negative and increasing absolute value to obtain a target re-read voltage table.

2. A data re-reading method according to claim 1, characterized in that: The obtaining of a target reread voltage table according to the initial reread voltage table comprises: Construct different reading and writing scenarios; In different read and write scenarios, the initial re-read voltage table is traversed respectively, and the probability of successful error correction of each offset voltage in the initial re-read voltage table is counted; Calculate the hit probability of each offset voltage in the initial re-read voltage table according to the probability of successful error correction and the weights corresponding to different read and write scenarios; The initial re-read voltage table is sorted in descending order of the hit probability to obtain a target re-read voltage table.

3. A data re-reading method according to claim 2, characterized in that: The construction of different read and write scenarios includes: Construct high-temperature writing and low-temperature reading scenarios, low-temperature writing and high-temperature reading scenarios, high-temperature data retention scenarios, and high-temperature data passing through a furnace scenarios. The temperature for high-temperature reading and writing is 85°C, the temperature for low-temperature reading and writing is -40°C, the temperature for high-temperature data retention is 125°C, and the temperature for high-temperature data passing through a furnace is 260°C.

4. A data re-reading method according to claim 3, characterized in that: The statistically analyzing the probability of successful error correction of each offset voltage in the initial re-read voltage table includes: According to experimental data, the probability of successful error correction of each offset voltage in the initial re-read voltage table in the high temperature writing and low temperature reading scenario, the low temperature writing and high temperature reading scenario, the high temperature data retention scenario and the high temperature data furnace passing scenario is respectively counted.

5. A data re-reading method according to claim 4, characterized in that: The step of sorting the initial re-read voltage table in descending order of the hit probability to obtain a target re-read voltage table includes: The initial re-read voltage table is sorted in descending order according to the hit probability to obtain a high-temperature write and low-temperature read sorting table. , high temperature data retention sort table , High temperature data furnace sorting table And low temperature write high temperature read sort table ; The high temperature write and low temperature read sort table , the high temperature data is maintained in a sorted table , the high temperature data furnace sorting table And the low temperature write high temperature read sorting table according to The order of the combination into a sorted table , specifically: ,in ; In the formula, Indicates the symbol for rounding down, i indicates The i-th data in, j represents The jth data in , n=1, 2, 3, 4; Without changing the sort table Remove the sort table in the order Repeated values ​​in get the target reread voltage table with sorting , specifically: 。 6. A data re-reading method according to any one of claims 1 to 5, characterized in that: Before receiving the reread request, the method further includes: The first row of the target re-read voltage table is set as the start position of the target re-read voltage table.

7. A data re-reading method according to claim 1, characterized in that: The step of sequentially traversing other offset voltages that have not been traversed in the target re-read voltage table until the error correction is successful includes: Determine other offset voltages around the offset voltage at the starting position in the target reread voltage table; Traversing the other surrounding offset voltages until error correction is successful; If the error correction fails when using the other surrounding offset voltages, the remaining offset voltages except the other surrounding offset voltages are traversed in sequence until the error correction succeeds.

8. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, each step of the data re-reading method according to any one of claims 1 to 7 is implemented.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, each step of the data re-reading method according to any one of claims 1 to 7 is implemented.

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