An etching solution for removing Si hole side wall damage layer and its preparation method and application
By using an etching solution containing fluorinated reagent and carbon chain to modify nitrosodisulfuric acid, combined with acid treatment and segmented etching process, the problem of removing the damage layer of the Si pore sidewall is solved, and the improvement of the morphology of the Si pore sidewall and the industrial promotion potential of the etching solution is achieved.
CN119039992BActive Publication Date: 2025-03-25ZHEJIANG AUFIRST MATERIAL TECH CO LTD
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Patent Information
- Application Number
- CN202411526791.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-30
- Publication Date
- 2025-03-25
- Estimated Expiration
- 2044-10-30
AI Technical Summary
Technical Problem
In the existing Bosch deep etching process, the Si pore side walls have rough and uneven morphology, and there is a damaged layer of about 500 Angstroms, which is difficult to effectively remove.
Method used
An etching solution including fluorinating reagent, nitric acid, acetic acid, permeable wetting agent and carbon chain modification is used as the etching solution of the reaction diffusion agent. The damage layer of the Si pore sidewall is removed through acid treatment and segmented etching processes.
Benefits of technology
Effectively remove the damage layer of the side wall of Si pore, improve the morphology of the pore wall, and make it smooth and uniform, improving the application prospects of the etching liquid and the potential for industrial promotion.
✦ Generated by Eureka AI based on patent content.
Abstract
The present invention provides an etching solution for removing a damaged layer on the side wall of a Si hole, and a preparation method and application thereof. The etching solution for removing the damaged layer on the side wall of a Si hole comprises the following components in weight proportion: 0.5-3 parts of a fluorinating agent; 20-70 parts of nitric acid; 30-50 parts of acetic acid; 1-5 parts of a penetrating wetting agent; and 1-10 parts of a reactive diffusing agent. The fluorinating agent is a nucleophilic fluorinating agent, the penetrating wetting agent is a Gemini surfactant, and the reactive diffusing agent is a carbon chain-modified nitrosodithionic acid. The etching solution for removing the damaged layer on the side wall of a Si hole of the present invention can effectively remove the damaged layer on the side wall of a Si hole in a TSV process. The etching solution of the present invention can improve the liquid replacement rate, accelerate mass transfer, promote uniform etching in the hole, and form a uniform morphology in the hole by etching the chip in sections.
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