Ion filtration device and method for controlling uniformity of degumming ashing rate

By designing an ion filter device including a first filter member, a gas transport assembly and a second filter member, the problem of low adjustable parameters of wafer degreasing ash rate uniformity in semiconductor manufacturing is solved, and higher degreasing ash rate uniformity and lower production costs are achieved.

CN119230457BActive Publication Date: 2025-03-28SHANGHAI BANGXIN SEMI TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202411745829.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-12-02
Publication Date
2025-03-28
Estimated Expiration
2044-12-02

AI Technical Summary

Technical Problem

In the prior art, the uniformity of the degluing ashing rate of wafers during semiconductor manufacturing has fewer adjustable parameters, which makes it difficult to adjust when the uniformity is poor.

Method used

An ion filter device is designed, including a first filter member, a gas transport assembly and a second filter member. The flow rate of the reaction gas or inert gas is adjusted through the gas transport assembly, and the degluing ashing rate on the periphery of the wafer is adjusted so as to be consistent with the degluing ashing rate on the center of the wafer.

Benefits of technology

The adjustable parameters of the wafer degreasing ashing rate are added, the uniformity of the degreasing ashing rate is improved, the process window is improved, production costs are reduced, and wafer quality is improved.

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Abstract

The present invention provides an ion filtering device and a method for controlling the uniformity of the de-gumming ashing rate, which are applied to the field of semiconductor manufacturing, and the ion filtering device comprises: a first filter element, a gas transmission component and a second filter element; the first filter element and the second filter element are respectively installed on both sides of the gas transmission component. The present invention sets a gas transmission component so that the gas flow rate of the reaction gas can be adjusted when passing through the ion filtering device, thereby adjusting the de-gumming ashing rate of the reaction gas on the wafer, increasing the adjustable parameters of the de-gumming ashing rate of the wafer, improving the uniformity of the overall de-gumming ashing rate of the wafer, further improving the production quality of the wafer, and improving the production process.
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