Preparation method of semiconductor light-emitting epitaxial layer and device

Abstract

The invention discloses a preparation method of a semiconductor light-emitting epitaxial layer and a preparation method of a semiconductor light-emitting device. The preparation method of the semiconductor light-emitting epitaxial layer comprises the following steps: patterning and etching a preset pit structure on a substrate; a light-emitting epitaxial layer is formed in the pit structure on the substrate through processing; wherein the light-emitting epitaxial layer is a structural layer at least comprising an n-type GaN layer, a quantum well layer and a p-type GaN layer; etching and removing the light-emitting epitaxial layer in an area except the interiors of the pit structures, so as to enable the light-emitting epitaxial layer in each pit structure to form a light-emitting pixel unit; wherein the light-emitting pixel units are excited to output light waves within a set wave band range. According to the invention, side wall damage to the quantum well layer in the light-emitting epitaxial layer in the pit structure can be reduced, so that the working performance of the semiconductor light-emitting epitaxial layer and the semiconductor light-emitting device is ensured.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device processing, and in particular to a method for preparing a semiconductor light-emitting epitaxial layer and a semiconductor light-emitting device. Background Art

[0002] Micro-LED, also known as micro light-emitting diode, refers to a high-density integrated LED array. The distance between LED pixels in the array is on the order of 10 microns, and each LED pixel can emit light by itself. In Micro-LED devices, the key structural layer to achieve the light-emitting function is the multi-quantum well active region layer; in the process of preparing Micro-LED devices, generally after forming a large-area multi-quantum well active region layer, the multi-quantum well active region layer is patterned and etched to form multiple small-area independent multi-quantum well active region layers; however, each multi-quantum well active region layer formed by etching will inevitably have sidewall damage, which will affect the working performance of a single multi-quantum well active region layer to a certain extent, and thus cause a significant decrease in the working performance of the entire Micro-LED device. Summary of the invention

[0003] The purpose of the present invention is to provide a method for preparing a semiconductor light-emitting epitaxial layer and a semiconductor light-emitting device, which can improve the working performance of the semiconductor light-emitting device to a certain extent.

[0004] In order to solve the above technical problems, the present invention provides a method for preparing a semiconductor light-emitting epitaxial layer, comprising:

[0005] Patterning and etching a pre-set pit structure on the substrate;

[0006] Forming a light-emitting epitaxial layer on the substrate including in the pit structure; wherein the light-emitting epitaxial layer is a structural layer including at least an n-type GaN layer, a quantum well layer and a p-type GaN layer;

[0007] The light-emitting epitaxial layer in the area other than the interior of the pit structure is etched and removed, so that the light-emitting epitaxial layer in each pit structure forms a light-emitting pixel unit; wherein the light-emitting pixel unit is excited to output light waves within a set wavelength band.

[0008] In an optional embodiment of the present application, the light-emitting epitaxial layers in all the pit structures output light waves of a single color within the same wavelength band when excited.

[0009] In an optional embodiment of the present application, a predetermined pit structure is patterned and etched on a substrate; and a light-emitting epitaxial layer is formed on the substrate including in the pit structure, comprising:

[0010] Patterning and etching a preset first pit structure on the substrate;

[0011] Forming a first light-emitting epitaxial layer on the substrate including in the first pit structure;

[0012] Etching and removing the first light-emitting epitaxial layer in the area other than the interior of the first pit structure to form a first light-emitting pixel unit that is excited to output a light wave within a first set wavelength range;

[0013] Patterning and etching a preset second pit structure on the substrate;

[0014] Forming a second light-emitting epitaxial layer on the substrate including in the second pit structure;

[0015] The second light-emitting epitaxial layer in the area except the interior of the second pit structure is etched and removed to form a second light-emitting pixel unit which is excited to output a light wave within a second set wavelength band.

[0016] In an optional embodiment of the present application, after the second light-emitting epitaxial layer in the area other than the interior of the second pit structure is etched and removed to form a second light-emitting pixel unit that is excited to output a light wave within a second set wavelength range, the method further includes:

[0017] Patterning and etching a preset third pit structure on the substrate;

[0018] Forming a third light-emitting epitaxial layer on the substrate including in the third pit structure;

[0019] The third light-emitting epitaxial layer in the area other than the interior of the third pit structure is etched and removed to form a third light-emitting pixel unit that is excited to output a light wave within a third set wavelength band.

[0020] In an optional embodiment of the present application, a light-emitting epitaxial layer is formed on the substrate including in the pit structure, and the light-emitting epitaxial layer in a region other than the interior of the pit structure is etched and removed, comprising:

[0021] Forming a first light-emitting epitaxial layer on the substrate including in the pit structure;

[0022] Etching and removing the first light-emitting epitaxial layer except for the region inside the pit structure that is less than the first set depth, to form a first light-emitting epitaxial layer that is excited to output light waves within the first set wavelength range and has a height of the first set depth;

[0023] Forming a second light-emitting epitaxial layer on the substrate including in the pit structure;

[0024] The second light-emitting epitaxial layer except for the area inside the pit structure that is less than the second set depth is etched and removed to form a second light-emitting epitaxial layer that is stacked with the first light-emitting epitaxial layer and is excited to output light waves within the second set wavelength band, so as to form a light-emitting pixel unit formed by the first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the pit structure.

[0025] In an optional embodiment of the present application, after the second light-emitting epitaxial layer except for the region less than the second set depth inside the pit structure is etched and removed to form a second light-emitting pixel unit stacked with the first light-emitting pixel unit and excited to output a light wave within the second set wavelength range, the method further includes:

[0026] Forming a third light-emitting epitaxial layer on the substrate including in the pit structure;

[0027] The third light-emitting epitaxial layer except for the area inside the pit structure less than the third set depth is etched and removed to form a third light-emitting pixel unit stacked with the second light-emitting pixel unit and excited to output light waves within the third set wavelength range.

[0028] In an optional embodiment of the present application, a light-emitting epitaxial layer is formed on the substrate including in the pit structure, and the light-emitting epitaxial layer in a region other than the interior of the pit structure is etched and removed, comprising:

[0029] Forming a first light-emitting epitaxial layer on the substrate including in the pit structure;

[0030] Forming a second light-emitting epitaxial layer on the substrate including in the pit structure;

[0031] The first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the area other than the interior of the pit structure are etched and removed to form a light-emitting pixel unit formed by the first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the pit structure; wherein the first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the light-emitting pixel unit are respectively used to be excited to output light waves within a first set wavelength band and a second set wavelength band.

[0032] In an optional embodiment of the present application, a light-emitting epitaxial layer is formed on the substrate including in the pit structure, and the light-emitting epitaxial layer in a region other than the interior of the pit structure is etched and removed, comprising:

[0033] Forming a first light-emitting epitaxial layer on the substrate including in the pit structure;

[0034] Forming a second light-emitting epitaxial layer on the substrate including in the pit structure;

[0035] Forming a third light-emitting epitaxial layer on the substrate including in the pit structure;

[0036] The first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer in the area other than the interior of the pit structure are etched and removed to form a light-emitting pixel unit in the pit structure, which is formed by stacking the first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer in sequence; wherein the first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer in the light-emitting pixel unit are respectively used to be excited to output light waves within a first set wavelength band, a second set wavelength band and a third set wavelength band.

[0037] In an optional embodiment of the present application, the first set wavelength range and the second set wavelength range are wavelength ranges corresponding to two different color light waves respectively.

[0038] In an optional embodiment of the present application, the first set wavelength range, the second set wavelength range and the third set wavelength range are wavelength ranges corresponding to three different color light waves respectively.

[0039] In an optional embodiment of the present application, patterning and etching a pre-set pit structure on a substrate includes:

[0040] Etching a plurality of preset pit structures on the substrate;

[0041] When the light-emitting epitaxial layer in the area other than the interior of the pit structure is etched and removed, the method further comprises:

[0042] The light-emitting epitaxial layer in each of the pit structures is segmented and etched, so that a plurality of the light-emitting pixel units are formed in each of the pit structures; and a set interval is provided between two adjacent light-emitting pixel units.

[0043] In an optional embodiment of the present application, the pit structure includes a plurality of strip-shaped pits arranged in sequence along a first set direction; the length direction of each strip-shaped pit is a second set direction perpendicular to the first set direction; the width of the strip-shaped pit in the first set direction is equal to the size of each of the light-emitting pixel units in the first set direction;

[0044] The light-emitting epitaxial layer in each of the pit structures is segmented and etched so that a plurality of light-emitting pixel units are formed in each of the pit structures, including:

[0045] The block epitaxial layer in each of the pit structures is segmented and etched along a plurality of cutting tracks parallel to the first set direction to obtain a plurality of the luminous pixel units, wherein the spacing between each of the cutting tracks is equal to the size of each of the luminous pixel units in the second set direction.

[0046] In an optional embodiment of the present application, the pit structure is any one of a cylindrical pit, a cubic column pit or a triangular prism pit.

[0047] A method for preparing a semiconductor light-emitting device, comprising:

[0048] Bonding the semiconductor light-emitting epitaxial layer prepared by the method for preparing a semiconductor light-emitting epitaxial layer as described in any one of the above items to the driving structure layer;

[0049] The substrate in the bonded semiconductor light-emitting epitaxial layer is etched away.

[0050] The present invention provides a method for preparing a semiconductor light-emitting epitaxial layer and a method for preparing a semiconductor light-emitting device, wherein the method for preparing the semiconductor light-emitting epitaxial layer comprises: patterning and etching a pre-set pit structure on a substrate; processing and forming a light-emitting epitaxial layer on the substrate including the pit structure; wherein the light-emitting epitaxial layer is a structural layer including at least an n-type GaN layer, a quantum well layer and a p-type GaN layer; etching and removing the light-emitting epitaxial layer in the area other than the inside of the pit structure, so that the light-emitting epitaxial layer in each pit structure forms a light-emitting pixel unit; wherein the light-emitting pixel unit is excited to output light waves within a set wavelength range.

[0051] In the present application, when preparing a semiconductor light-emitting epitaxial layer on a substrate, a patterning process is first performed on the substrate to form a pit structure, and then an epitaxial structure layer is grown in an area including the pit structure on the substrate, and the epitaxial structure layer except the inside of the pit structure is etched and removed, that is, only the epitaxial structure layer within each pit structure on the substrate is retained and can be used as a light-emitting pixel unit for outputting excitation light. Obviously, when removing the redundant epitaxial structure layer on the substrate, it is not necessary to etch the epitaxial structure layer within the pit structure, thereby avoiding side wall damage to the quantum well layer in the epitaxial structure layer inside and outside the pit structure, thereby ensuring the light-emitting performance of the entire device to a certain extent. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0053] Figure 1 This is a schematic diagram of the process of conventionally preparing semiconductor light-emitting epitaxial structures;

[0054] Figure 2 A schematic diagram of a first process of a method for preparing a semiconductor light-emitting epitaxial layer provided in an embodiment of the present application;

[0055] Figure 3 for Figure 2 A schematic cross-sectional structure diagram of the substrate and the light-emitting epitaxial layer corresponding to step S12;

[0056] Figure 4 A second schematic flow chart of the method for preparing a semiconductor light-emitting epitaxial layer provided in an embodiment of the present application;

[0057] Figure 5 A third schematic flow chart of the method for preparing a semiconductor light-emitting epitaxial layer provided in an embodiment of the present application;

[0058] Figure 6 A schematic diagram of a cross-sectional structure of a light-emitting epitaxial layer in a single pit structure in a semiconductor light-emitting epitaxial layer provided in an embodiment of the present application;

[0059] Figure 7 Another schematic diagram of a cross-sectional structure of a light-emitting epitaxial layer in a single pit structure in a semiconductor light-emitting epitaxial layer provided in an embodiment of the present application;

[0060] Figure 8 A fourth schematic flow chart of the method for preparing a semiconductor light-emitting epitaxial layer provided in an embodiment of the present application;

[0061] Fig. 9 A fifth schematic flow chart of the method for preparing a semiconductor light-emitting epitaxial layer provided in an embodiment of the present application;

[0062] Fig.10 A schematic flow chart of a method for preparing a semiconductor light-emitting device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0063] like Figure 1As shown, in the process of preparing the semiconductor light-emitting epitaxial layer of the Micro-LED device, generally, an epitaxial structure including at least an n-type GaN layer, a quantum well layer, a p-type GaN layer and other structural layers is formed layer by layer on the entire surface of the substrate, and then the epitaxial structure is patterned and etched to form a plurality of light-emitting units arranged in an array, wherein each light-emitting unit comprises a small-area stacked n-type GaN layer, a quantum well layer, and a p-type GaN layer; obviously, in the process of patterned etching of the epitaxial structure, the complete large-area quantum well layer will be etched into several small-area quantum well layers, and this etching process will inevitably cause sidewall damage to the etched quantum well layer, thereby affecting the working performance of the entire device.

[0064] To this end, the present application discloses a technical solution that can avoid damage to the sidewalls of the quantum well layer in the semiconductor light-emitting epitaxial layer, which can greatly improve the working performance of the Micro-LED device.

[0065] In order to enable those skilled in the art to better understand the scheme of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0066] like Figure 2 and Figure 3 As shown, Figure 2 A schematic flow chart of a method for preparing a semiconductor light-emitting epitaxial layer provided in an embodiment of the present application.

[0067] In a specific embodiment of the present application, the method for preparing the semiconductor light-emitting epitaxial layer may include:

[0068] S11: patterning and etching a pre-set pit structure on the substrate;

[0069] S12: forming a light-emitting epitaxial layer on the substrate including the pit structure; wherein the light-emitting epitaxial layer is a structural layer including at least an n-type GaN layer, a quantum well layer and a p-type GaN layer;

[0070] S13: etching and removing the light-emitting epitaxial layer in the area other than the interior of the pit structure, so that the light-emitting epitaxial layer in each pit structure forms a light-emitting pixel unit; wherein the light-emitting pixel unit is excited to output light waves within a set wavelength band.

[0071] The substrate 1 in this embodiment can be a silicon substrate 1 or a sapphire substrate 1, etc., which is not specifically limited in this application. Figure 2As shown, the substrate 1 can be etched to form a plurality of pit structures 10 recessed in the upper surface of the substrate 1. The portion where the pit structure 10 is processed on the substrate 1 is also the region where the light-emitting pixel point of the Micro-LED semiconductor device is ultimately required to be formed; and each pit structure 10 can be arranged in an array, and the pit structure 10 can be any one of a cylindrical pit, a cubic columnar pit, or a triangular prism pit, or a pit of other shapes, which is not specifically limited in this embodiment. In addition, in the actual processing process, a photoresist can be coated on the surface of the entire substrate 1, and a photoresist pattern can be formed according to the pre-set distribution position of the pit structure 10, and then the pit structure 10 can be processed according to the photoresist pattern. After the pit structure 10 is processed on the substrate 1, the light-emitting epitaxial layer 20 can be further processed on the substrate 1.

[0072] like Figure 3 As shown, Figure 3 for Figure 2 In the top view corresponding to step S12, since each pit structure 10 is recessed downward on the surface of the substrate 1, when the light-emitting epitaxial layer 20 covering the area including the pit structure 10 on the substrate 1 is prepared, there is an obvious height difference between the light-emitting epitaxial layer 20 formed in the pit structure 10 and the light-emitting epitaxial layer 20 formed in other areas of the surface of the substrate 1, that is, the light-emitting epitaxial layer 20 in the pit structure 10 and the light-emitting epitaxial layer 20 outside the pit structure 10 are separated from each other. An integrated structure, so that during the further etching and removal process of the light-emitting epitaxial layer 20 outside the pit structure 10 on the substrate 1, the integrity of the light-emitting epitaxial layer 20 inside the pit structure 10 can be retained, and finally a light-emitting epitaxial layer 20 that is not etched and can be used as a light-emitting pixel unit is formed in each pit structure 10, thereby avoiding the problem of side wall damage of the quantum well layer 203 in the light-emitting epitaxial layer 20 in the pit structure 10, thereby ensuring the working performance of each light-emitting epitaxial layer 20 as a light-emitting pixel unit.

[0073] In addition, it should be noted that the upper surface of the light-emitting epitaxial layer 20 in the pit structure 10 may not be smooth. When etching the light-emitting epitaxial layer 20 other than the pit structure 10 on the substrate 1, the portion of the upper surface of the light-emitting epitaxial layer 20 in the pit structure 10 that protrudes outside the pit structure 10 can also be simultaneously etched and removed. In short, it should be ensured that after etching, the upper surface of the area where the pit structure 10 is located on the substrate 1 and the upper surface of the area outside the pit structure 10 maintain a flat surface.

[0074] Furthermore, the light-emitting epitaxial layer 20 of the present embodiment can be an epitaxial structure including at least a buffer layer, an n-type GaN layer, a quantum well layer, and a p-type GaN layer stacked layer by layer, wherein the light-emitting epitaxial layer 20 having different quantum well layers can be excited to generate light waves within different wavelength ranges after the voltage is turned on. For the light-emitting epitaxial layer 20 in each pit structure 10 in the present embodiment, the LED device formed by the semiconductor light-emitting epitaxial layer is a monochromatic LED device; of course, the light-emitting epitaxial layer 20 in each pit structure 10 can also be excited to output a plurality of light waves of different colors, thereby, the LED device formed by the semiconductor light-emitting epitaxial layer is also a multi-color LED device.

[0075] To summarize, in the present application, a patterning process is first performed on the substrate to form a pit structure, and then an epitaxial structure layer is grown layer by layer on the substrate, and finally the epitaxial structure layer except the pit structure is etched and removed, so that only the epitaxial structure layer within each pit structure on the substrate is completely retained without the need for etching, and can be used as a luminous pixel point for outputting excitation light; because when removing the excess epitaxial structure layer on the substrate, it is not necessary to etch the epitaxial structure layer within the pit structure, thereby ensuring the structural integrity of the epitaxial structure layer within the pit structure, thereby avoiding side wall damage to the quantum well layer in the epitaxial structure layer within the pit structure, thereby ensuring the luminescence performance of the entire device to a certain extent.

[0076] Based on the above embodiments, Figure 4 As shown, in an optional embodiment of the present application, a method for preparing a semiconductor light-emitting epitaxial layer may include:

[0077] S211: pattern-etching a preset first pit structure on the substrate.

[0078] S212: Forming a first light-emitting epitaxial layer on the substrate including in the first pit structure.

[0079] S213: etching and removing the first light-emitting epitaxial layer in the area except the interior of the first pit structure to form a first light-emitting pixel unit that is excited to output a light wave within a first set wavelength band.

[0080] S221: pattern-etching a preset second pit structure on the substrate.

[0081] S222: Form a second light-emitting epitaxial layer on the substrate including in the second pit structure.

[0082] S223: etching and removing the second light-emitting epitaxial layer in the area except the interior of the second pit structure to form a second light-emitting pixel unit that is excited to output a light wave within a second set wavelength band.

[0083] In this embodiment, the pit structure 10 is formed on the substrate 1 by two processing steps, wherein the pit structure 10 formed by the first processing is the first pit structure 11, and then the first light-emitting epitaxial layer 21 is grown in the area including the first pit structure 11 on the substrate 1, and the first light-emitting epitaxial layer 21 on the substrate 1 except the first pit structure 11 is etched and removed, that is, the first light-emitting epitaxial layer 21 is retained only in each first pit structure 11; on this basis, in a similar manner, the pit structure 10 recessed in the upper surface of the substrate 1 is processed again on the substrate 1, that is, the second pit structure 12, and a second light-emitting epitaxial layer 22 is formed in each second pit structure 12.

[0084] Further optionally, in actual applications, the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 can have different quantum well layers respectively, so that the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 can be excited by voltage and can respectively output light waves in a first set band range and a second set band range, and the first set band range and the second set band range can respectively correspond to band ranges corresponding to two different color light waves, that is, light-emitting pixel units that can output two different color light waves are also formed in the first pit structure 11 and the second pit structure 12.

[0085] It should be noted that when the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 are respectively used to output light waves of two different colors, the first pit structure 11 and the second pit structure 12 should be alternately distributed on the substrate 1, that is, the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 can be alternately distributed. Therefore, when the LED device formed by the semiconductor light-emitting epitaxial layer is actually working, the first light-emitting epitaxial layer 21 or the second light-emitting epitaxial layer 22 can be excited separately to output light waves of two different colors, or the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 can be excited at the same time to output a combined light wave of two different colors of light waves.

[0086] Based on the above embodiments, Figure 5 As shown, in an optional embodiment of the present application, a method for preparing a semiconductor light-emitting epitaxial layer may include:

[0087] S311: pattern-etching a preset first pit structure on the substrate.

[0088] S312: Form a first light-emitting epitaxial layer on the substrate including in the first pit structure.

[0089] S313: etching and removing the first light-emitting epitaxial layer in the area except the interior of the first pit structure to form a first light-emitting pixel unit that is excited to output a light wave within a first set wavelength band.

[0090] S321: pattern-etching a preset second pit structure on the substrate.

[0091] S322: Form a second light-emitting epitaxial layer on the substrate including in the second pit structure.

[0092] S323: etching and removing the second light-emitting epitaxial layer in the area except the interior of the second pit structure to form a second light-emitting pixel unit that is excited to output a light wave within a second set wavelength band.

[0093] S331: pattern-etching a preset third pit structure on the substrate.

[0094] S332: Form a third light-emitting epitaxial layer on the substrate including in the third pit structure.

[0095] S333: etching and removing the third light-emitting epitaxial layer in the area except the interior of the third pit structure to form a third light-emitting pixel unit that is excited to output a light wave within a third set wavelength band.

[0096] In practical applications, the distribution position patterns of three different light-emitting epitaxial layers 20 on the substrate 1 can be planned and determined in advance, and then the first pit structure 11 is formed by etching on the substrate 1 based on the distribution position of the first light-emitting epitaxial layer 21. After the first pit structure 11 is processed, the first light-emitting epitaxial layer 21 can be processed on the substrate 1. The first light-emitting epitaxial layer 21 in the first pit structure 11 is obviously separated from the first light-emitting epitaxial layer 21 in other parts of the substrate 1. Therefore, when the first light-emitting epitaxial layer 21 outside the first pit structure 11 is etched away, the integrity of the first light-emitting epitaxial layer 21 in the first pit structure 11 will not be damaged in any way. Finally, only the first light-emitting epitaxial layer 21 with a complete structure and no sidewall damage in the first pit structure 11 is retained. In addition, it should be noted that in order to avoid interfering with the subsequent preparation of the remaining two epitaxial structure layers, the depth of the first pit structure 11 in this embodiment should be the same as the thickness of the first light-emitting epitaxial layer 21. Therefore, after the first light-emitting epitaxial layer 21 except the first pit structure 11 on the substrate 1 is etched away, the upper surface of the integral structure formed by the remaining first light-emitting epitaxial layer 21 and the substrate 1 is a flat planar structure.

[0097] In a similar manner, the second pit structure 12 can be further processed on the substrate 1 according to a pre-set position area, and then the second light-emitting epitaxial layer 22 is processed on the substrate 1. Similarly, the second light-emitting epitaxial layer 22 formed in the second pit structure 12 and the second light-emitting epitaxial layer 22 formed in other areas of the substrate 1 (including the area directly above the first light-emitting epitaxial layer 21) are layered at different heights. At this time, the second light-emitting epitaxial layer 22 except the second pit structure 12 is etched and removed, that is, only the second light-emitting epitaxial layer 22 with a complete structure located in the second pit structure 12 is retained. Like the first pit structure 11 mentioned above, the depth of the second pit structure 12 should also be equal to the thickness of the second light-emitting epitaxial layer 22.

[0098] Further, similar to the above-mentioned process of forming the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22, further, according to the pre-set position area, firstly, the third pit structure 13 is formed, and then the third light-emitting epitaxial layer 23 is formed on the substrate 1. By utilizing the characteristics that the third light-emitting epitaxial layer 23 in the third pit structure 13 is located lower than the third light-emitting epitaxial layer 23 in other areas on the substrate 1, and is separated from the third light-emitting epitaxial layer 23 in other areas, the third light-emitting epitaxial layer 23 on the substrate 1 except the third light-emitting epitaxial layer 23 in the third pit structure 13 is etched and removed, thereby obtaining the first light-emitting epitaxial layer 21, the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23 respectively distributed in a plurality of different pit structures 10 on the substrate 1. Obviously, the depth of the third pit structure 13 can be equal to the thickness of the third light-emitting epitaxial layer 23, or can be greater than or less than the thickness of the third light-emitting epitaxial layer 23, and no specific limitation is made in this embodiment.

[0099] like Figure 5As shown, the first pit structure 11, the second pit structure 12 and the third pit structure 13 can be arranged in a periodic regular pattern, and accordingly, the first light-emitting epitaxial layer 21, the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23 finally formed are also arranged in a periodic and repeated pattern; and the structures of the first light-emitting epitaxial layer 21, the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23 are similar, and all include a buffer layer, an n-type GaN layer, a quantum well layer and a p-type GaN layer; the difference is that the quantum well layers in the first light-emitting epitaxial layer 21, the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23 can be different; thus, the first light-emitting epitaxial layer 21, the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23 can be excited to output light waves in the first set wavelength range, the second set wavelength range and the third set wavelength range respectively when the voltage is turned on, and the first set wavelength range, the second set wavelength range and the third set wavelength range can be wavelength ranges corresponding to three different color wavelengths respectively. For example, the first light-emitting epitaxial layer 21, the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23 can be excited to output red light, green light and blue light respectively, and the LED device formed by the semiconductor light-emitting epitaxial structure can be a full-color Micro-LED device.

[0100] Based on the above embodiments, refer to Figure 6 In an optional embodiment of the present application, the method for preparing the semiconductor light-emitting epitaxial layer may include:

[0101] S411: patterning and etching a pre-set pit structure on the substrate.

[0102] S412: Form a first light-emitting epitaxial layer on the substrate including in the pit structure.

[0103] S413: Etching and removing the first light-emitting epitaxial layer except for the area inside the pit structure that is less than the first set depth, to form a first light-emitting epitaxial layer that is excited to output light waves within the first set wavelength range and has a height of the first set depth.

[0104] S414: forming a second light-emitting epitaxial layer on the substrate including in the pit structure.

[0105] S415: Etch and remove the second light-emitting epitaxial layer except for the area inside the pit structure that is less than the second set depth, to form a second light-emitting epitaxial layer that is stacked with the first light-emitting epitaxial layer and is excited to output light waves within the second set wavelength range, so as to form a light-emitting pixel unit formed by the first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the pit structure.

[0106] Reference Figure 6In this embodiment, a first light-emitting epitaxial layer 21 and a second light-emitting epitaxial layer 22 are stacked in each pit structure 10. In the actual processing process, all the pit structures 10 arranged in an array can be processed at one time on the entire substrate 1, and the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 are formed layer by layer in sequence; the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 in this embodiment can be the same light-emitting epitaxial layer 20, or two light-emitting epitaxial layers 20 with different quantum well layers. This is not specifically limited in this embodiment.

[0107] On this basis, when the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 are connected to a voltage, they can be excited to output light waves in the first set wavelength range and the second set wavelength range respectively; if the first set wavelength range and the second set wavelength range are the same wavelength range, that is, each pit structure 10 has two light-emitting epitaxial layers 20, the light-emitting power of the light-emitting pixel unit in each pit structure 10 can be improved in practical applications. Of course, the first set wavelength range and the second set wavelength range can also be wavelength ranges corresponding to two different color light waves, so that each pit structure 10 can output a light beam after the two different color light waves respectively output by the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 are superimposed and combined.

[0108] In addition, in this embodiment, after the first light-emitting epitaxial layer 21 is grown and formed, the first light-emitting epitaxial layer 21 on the substrate 1 is first etched and removed except in the pit structure 10 and in the area less than the first set depth in the pit structure 10, that is, only the first light-emitting epitaxial layer 21 in the area less than the first set depth in the pit structure 10 is retained; in this embodiment, the area less than the first set depth in the pit structure 10 refers to the area whose height from the bottom surface of the pit structure 10 to the top is less than the first set depth. On this basis, the second light-emitting epitaxial layer 22 is further grown and formed, and the second light-emitting epitaxial layer 22 outside the pit structure 10 and in the area less than the second set depth in the pit structure 10 is etched and removed. It can be understood that the second set depth is greater than the first set depth, and the second set depth can be equal to the depth of the pit structure 10.

[0109] The formation of the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 by each pit structure 1 on the substrate 1 is not limited to the above implementation. In another optional implementation of this embodiment, the method for preparing the semiconductor light-emitting epitaxial layer may include:

[0110] S421: patterning and etching a pre-set pit structure on the substrate.

[0111] S422: Form a first light-emitting epitaxial layer on the substrate including in the pit structure.

[0112] S423: Form a second light-emitting epitaxial layer on the substrate including in the pit structure.

[0113] S424: The first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the area other than the interior of the pit structure are etched and removed to form a light-emitting pixel unit formed by the first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the pit structure; wherein the first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the light-emitting pixel unit are respectively used to be excited to output light waves within a first set wavelength band and a second set wavelength band.

[0114] In this embodiment, the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 are grown in sequence, and then the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 outside the pit structure 10 are etched away at one time. Similarly, on the basis of generating the first light-emitting epitaxial layer 21 and the second light-emitting epitaxial layer 22 in each pit structure 10, the number of times the light-emitting epitaxial layer 20 is etched away is reduced.

[0115] Based on the above embodiments, refer to Figure 7 In an optional embodiment of the present application, the method for preparing the semiconductor light-emitting epitaxial layer may include:

[0116] S511: patterning and etching a pre-set pit structure on the substrate.

[0117] S512: Form a first light-emitting epitaxial layer on the substrate including in the pit structure.

[0118] S513: Etching and removing the first light-emitting epitaxial layer except for the region inside the pit structure that is less than the first set depth, to form a first light-emitting epitaxial layer that is excited to output light waves within the first set wavelength range and has a height of the first set depth.

[0119] S514: forming a second light-emitting epitaxial layer on the substrate including in the pit structure.

[0120] S515: Etch and remove the second light-emitting epitaxial layer except for the area inside the pit structure that is less than the second set depth, to form a second light-emitting epitaxial layer that is stacked with the first light-emitting epitaxial layer and is excited to output light waves within the second set wavelength range, so as to form a light-emitting pixel unit formed by the first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the pit structure.

[0121] S516: Form a third light-emitting epitaxial layer on the substrate including in the pit structure.

[0122] S517: Etching and removing the third light-emitting epitaxial layer except for the region inside the pit structure that is less than the third set depth, to form a third light-emitting pixel unit that is stacked with the second light-emitting pixel unit and is excited to output light waves within a third set wavelength range.

[0123] Reference Figure 7 In this embodiment, a first light-emitting epitaxial layer 21, a second light-emitting epitaxial layer 22, and a third light-emitting epitaxial layer 23 are stacked in each pit structure 10. Similar to the above-mentioned stacking of two light-emitting epitaxial layers 20 in each pit structure 10, in this embodiment, each time a light-emitting epitaxial layer 20 is formed, an etching is performed to remove the excess light-emitting epitaxial layer 20, and then a second light-emitting epitaxial layer 20 is grown, and then an etching is performed again, and so on, and finally three light-emitting epitaxial layers 20 are stacked in each pit structure 10.

[0124] In this embodiment, the first light-emitting epitaxial layer 21, the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23 can be excited to output light waves of the first set wavelength range, the second set wavelength range and the third set wavelength range respectively when the voltage is turned on. The first set wavelength range, the second set wavelength range and the third set wavelength range can be completely the same set wavelength range, or they can be different wavelength ranges, for example, the second set wavelength range is the same as the third set wavelength range, but different from the first set wavelength range; or the first set wavelength range, the second set wavelength range and the third set wavelength range are three different wavelength ranges, for example, they can be three different wavelength ranges corresponding to blue light, green light and red light respectively. When the three light-emitting epitaxial layers 20 in each pit structure 10 are excited at the same time, white light outputted by the red, green and blue light rays can be directly output. In addition, the depth of each pit structure 10 should not be less than the thickness of the first light-emitting epitaxial layer 21, the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23.

[0125] Of course, forming an epitaxial structure in which the first light-emitting epitaxial layer 21 , the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23 are stacked in each pit structure 10 is not limited to the above implementation method.

[0126] In another optional embodiment of the present application, the method for preparing a semiconductor light-emitting epitaxial layer may further include:

[0127] S521: patterning and etching a pre-set pit structure on the substrate.

[0128] S522: Form a first light-emitting epitaxial layer on the substrate including in the pit structure.

[0129] S523: Form a second light-emitting epitaxial layer on the substrate including in the pit structure.

[0130] S524: Form a third light-emitting epitaxial layer on the substrate including in the pit structure.

[0131] S525: The first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer in the area other than the interior of the pit structure are etched and removed to form a light-emitting pixel unit in the pit structure, which is formed by stacking the first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer in sequence; wherein the first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer in the light-emitting pixel unit are respectively used to be excited to output light waves within a first set wavelength range, a second set wavelength range and a third set wavelength range.

[0132] In this embodiment, the first light-emitting epitaxial layer 21, the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23 are grown in sequence, and the first light-emitting epitaxial layer 21, the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23 outside the pit structure 10 are etched away at one time. Similarly, on the basis of generating the first light-emitting epitaxial layer 21, the second light-emitting epitaxial layer 22 and the third light-emitting epitaxial layer 23 in each pit structure 10, the number of times the light-emitting epitaxial layer 20 is etched away is reduced.

[0133] Reference Figure 8 In an optional embodiment of the present application, the method for preparing the semiconductor light-emitting epitaxial layer may include:

[0134] S61: etching a plurality of preset pit structures on the substrate.

[0135] S62: Forming a light-emitting epitaxial layer on the substrate including in the pit structure.

[0136] S63: etching and removing the light-emitting epitaxial layer in the area except the interior of the pit structure.

[0137] S64: performing segmentation etching on the light-emitting epitaxial layer in each pit structure, so that a plurality of light-emitting pixel units are formed in each pit structure; and a set interval is provided between two adjacent light-emitting pixel units.

[0138] like Figure 8 As shown, in Figure 8In the embodiment shown, the pit structure 10 includes a plurality of strip pits arranged in sequence along a first set direction; the length direction of each strip pit is a second set direction perpendicular to the first set direction; the width of the strip pit in the first set direction is equal to the size of each light-emitting pixel unit in the first set direction, and the light-emitting epitaxial layer 20 in each pit structure 1 can be divided and cut to form a plurality of light-emitting pixel units distributed in sequence along the second set direction, so as to reduce the division and cutting of the side walls of each light-emitting pixel unit as much as possible, thereby reducing the damage to the side walls of the quantum well layer in each light-emitting pixel unit. On this basis, when the light-emitting epitaxial layer in each pit structure 10 is divided and etched, the block epitaxial layer in each pit structure can be divided and etched along a plurality of cutting tracks parallel to the first set direction to obtain a plurality of light-emitting pixel units, wherein the spacing between each cutting track is equal to the size of each light-emitting pixel unit in the second set direction.

[0139] It can be understood that the pit structure 10 in this embodiment is not limited to the above-mentioned structural shape. For example, each pit structure 10 can also be a square pit. Correspondingly, the light-emitting epitaxial layer 20 in each pit structure 10 can be divided into four rectangular light-emitting pixel units distributed in a field shape along the symmetry plane, or four triangular light-emitting pixel units distributed in a field shape.

[0140] Of course, in practical applications, the pit structure 10 in this embodiment can also be other structural shapes, and the light-emitting pixel unit in each pit structure 10 can also be circular, square or other shaped structures, which is not specifically limited in this embodiment.

[0141] In addition, and Figure 6 Similar to the embodiment shown in FIG. 1 , the light-emitting epitaxial layer 20 in each pit structure 10 in this embodiment may also be a first light-emitting epitaxial layer 21 and a second light-emitting epitaxial layer 22 stacked in a stacked manner. Figure 7 Similar to the embodiment shown, the light-emitting epitaxial layer 20 in each pit structure 10 can be a first light-emitting epitaxial layer 21, a second light-emitting epitaxial layer 22 and a third light-emitting epitaxial layer stacked; and the growth preparation method of the light-emitting epitaxial layer 20 in each pit structure 10 in this embodiment can refer to the above Figure 7 and Figure 8 The corresponding embodiments can be prepared and formed in the same manner, which will not be repeated in this embodiment.

[0142] Furthermore, if Fig. 9 As shown, in an optional embodiment of this embodiment, the pit structure 10 can also be similar to Figure 4 and Figure 5 In the embodiment shown, the etching is performed in batches, specifically, the etching can be performed in two or three batches. Fig.10 FIG. 1 shows that the pit structure 10 is formed by three times of processing. The first pit structure 11 formed by the first processing has a first light-emitting epitaxial layer grown therein, the second pit structure 12 formed by the second processing has a second light-emitting epitaxial layer grown therein, and the third pit structure 13 formed by the third processing has a third light-emitting epitaxial layer grown therein. The specific preparation process can be the same as Figure 5 After forming the light-emitting epitaxial layer in each pit structure 10 , the light-emitting epitaxial layer 20 in each pit structure 10 can be divided and cut uniformly, thereby forming a plurality of light-emitting pixel units in each pit structure 10 .

[0143] Based on any of the above embodiments, Fig.10 As shown, the present application also provides an embodiment of a method for preparing a semiconductor light-emitting device, and the method for preparing a semiconductor light-emitting device includes:

[0144] S81: bonding the semiconductor light-emitting epitaxial layer prepared by the method for preparing a semiconductor light-emitting epitaxial layer as described in any one of the above items to the driving structure layer;

[0145] S82: Etching and removing the substrate in the bonded semiconductor light-emitting epitaxial layer.

[0146] like Fig.10 As shown, in this embodiment, the substrate 1 in the semiconductor light-emitting epitaxial layer prepared as described above is turned downward, so that the surface of the substrate 1 provided with the light-emitting epitaxial layer 20 faces downward, and then the substrate 1 is bonded to the driving structure layer 30. The driving structure layer 10 can be used to electrically connect the light-emitting epitaxial layer 20 and the power supply circuit, and then provide a working voltage to the light-emitting epitaxial layer 20, so that the light-emitting epitaxial layer 20 outputs light waves within a set wavelength range. On this basis, the substrate 1 is etched and removed, and only the light-emitting epitaxial layer 10 and the driving structure layer 30 are retained, that is, a semiconductor light-emitting device is obtained.

[0147] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the term "includes", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment comprising a series of elements are inherent to the elements. In the absence of more restrictions, the elements limited by the sentence "comprising one..." do not exclude the presence of other identical elements in the process, method, article or equipment comprising the elements. In addition, the above-mentioned technical solution provided in the embodiment of the present application is consistent with the corresponding technical solution in the prior art in principle, and the part is not described in detail, so as to avoid too much redundancy.

[0148] The principles and implementation methods of the present invention are described in this article using specific examples. The description of the above embodiments is only used to help understand the method and core ideas of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made to the present invention without departing from the principles of the present invention, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A method for preparing a semiconductor light-emitting epitaxial layer, characterized in that: include: Patterning and etching a pre-set pit structure on the substrate; Forming a light-emitting epitaxial layer on the substrate including in the pit structure; wherein the light-emitting epitaxial layer is a structural layer including at least an n-type GaN layer, a quantum well layer and a p-type GaN layer; The light-emitting epitaxial layer in the area other than the interior of the pit structure is etched and removed, so that the light-emitting epitaxial layer in each pit structure forms a light-emitting pixel unit; wherein the light-emitting pixel unit is excited to output light waves within a set wavelength band.

2. The method for preparing a semiconductor light-emitting epitaxial layer according to claim 1, characterized in that: When the light-emitting epitaxial layers in all the pit structures are excited, they all output light waves of a single color within the same wavelength band.

3. The method for preparing a semiconductor light-emitting epitaxial layer according to claim 1, characterized in that: Patterning and etching a pre-set pit structure on a substrate; processing and forming a light-emitting epitaxial layer on the substrate including in the pit structure, comprising: Patterning and etching a preset first pit structure on the substrate; Forming a first light-emitting epitaxial layer on the substrate including in the first pit structure; Etching and removing the first light-emitting epitaxial layer in the area other than the interior of the first pit structure to form a first light-emitting pixel unit that is excited to output a light wave within a first set wavelength range; Patterning and etching a preset second pit structure on the substrate; Forming a second light-emitting epitaxial layer on the substrate including in the second pit structure; The second light-emitting epitaxial layer in the area except the interior of the second pit structure is etched and removed to form a second light-emitting pixel unit which is excited to output a light wave within a second set wavelength band.

4. The method for preparing a semiconductor light-emitting epitaxial layer according to claim 3, characterized in that: After the second light-emitting epitaxial layer in the area other than the interior of the second pit structure is etched and removed to form a second light-emitting pixel unit that is excited to output a light wave within a second set wavelength range, the method further includes: Patterning and etching a preset third pit structure on the substrate; Forming a third light-emitting epitaxial layer on the substrate including in the third pit structure; The third light-emitting epitaxial layer in the area other than the interior of the third pit structure is etched and removed to form a third light-emitting pixel unit that is excited to output a light wave within a third set wavelength band.

5. The method for preparing a semiconductor light-emitting epitaxial layer according to claim 1, characterized in that: The method comprises: forming a light-emitting epitaxial layer on the substrate including the inside of the pit structure, and etching and removing the light-emitting epitaxial layer in the area other than the inside of the pit structure, comprising: Forming a first light-emitting epitaxial layer on the substrate including in the pit structure; Etching and removing the first light-emitting epitaxial layer except for the region inside the pit structure that is less than the first set depth, to form a first light-emitting epitaxial layer that is excited to output light waves within the first set wavelength range and has a height of the first set depth; Forming a second light-emitting epitaxial layer on the substrate including in the pit structure; The second light-emitting epitaxial layer except for the area inside the pit structure that is less than the second set depth is etched and removed to form a second light-emitting epitaxial layer that is stacked with the first light-emitting epitaxial layer and is excited to output light waves within the second set wavelength band, so as to form a light-emitting pixel unit formed by the first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the pit structure.

6. The method for preparing a semiconductor light-emitting epitaxial layer according to claim 5, characterized in that: After the second light-emitting epitaxial layer except for the region less than the second set depth inside the pit structure is etched and removed to form a second light-emitting pixel unit stacked with the first light-emitting pixel unit and excited to output a light wave within the second set wavelength range, the method further includes: Forming a third light-emitting epitaxial layer on the substrate including in the pit structure; The third light-emitting epitaxial layer except for the area inside the pit structure less than the third set depth is etched and removed to form a third light-emitting pixel unit stacked with the second light-emitting pixel unit and excited to output light waves within the third set wavelength range.

7. The method for preparing a semiconductor light-emitting epitaxial layer according to claim 1, characterized in that: The method comprises: forming a light-emitting epitaxial layer on the substrate including the inside of the pit structure, and etching and removing the light-emitting epitaxial layer in the area other than the inside of the pit structure, comprising: Forming a first light-emitting epitaxial layer on the substrate including in the pit structure; Forming a second light-emitting epitaxial layer on the substrate including in the pit structure; The first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the area other than the interior of the pit structure are etched and removed to form a light-emitting pixel unit formed by the first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the pit structure; wherein the first light-emitting epitaxial layer and the second light-emitting epitaxial layer in the light-emitting pixel unit are respectively used to be excited to output light waves within a first set wavelength band and a second set wavelength band.

8. The method for preparing a semiconductor light-emitting epitaxial layer according to claim 1, characterized in that: The method comprises: forming a light-emitting epitaxial layer on the substrate including the inside of the pit structure, and etching and removing the light-emitting epitaxial layer in the area other than the inside of the pit structure, comprising: Forming a first light-emitting epitaxial layer on the substrate including in the pit structure; Forming a second light-emitting epitaxial layer on the substrate including in the pit structure; Forming a third light-emitting epitaxial layer on the substrate including in the pit structure; The first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer in the area other than the interior of the pit structure are etched and removed to form a light-emitting pixel unit in the pit structure, which is formed by stacking the first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer in sequence; wherein the first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer in the light-emitting pixel unit are respectively used to be excited to output light waves within a first set wavelength band, a second set wavelength band and a third set wavelength band.

9. The method for preparing a semiconductor light-emitting epitaxial layer according to any one of claims 3, 5 or 7, characterized in that: The first set wavelength range and the second set wavelength range are wavelength ranges corresponding to two different color light waves respectively.

10. The method for preparing a semiconductor light-emitting epitaxial layer according to claim 6 or 8, characterized in that: The first set wavelength range, the second set wavelength range and the third set wavelength range are wavelength ranges corresponding to three different color light waves respectively.

11. The method for preparing a semiconductor light-emitting epitaxial layer according to any one of claims 1 to 8, characterized in that: Patterning and etching a pre-set pit structure on a substrate, comprising: Etching a plurality of preset pit structures on the substrate; When the light-emitting epitaxial layer in the area other than the interior of the pit structure is etched and removed, the method further comprises: The light-emitting epitaxial layer in each of the pit structures is segmented and etched, so that a plurality of the light-emitting pixel units are formed in each of the pit structures; and a set interval is provided between two adjacent light-emitting pixel units.

12. The method for preparing a semiconductor light-emitting epitaxial layer according to claim 11, characterized in that: The pit structure comprises a plurality of strip-shaped pits arranged in sequence along a first setting direction; the length direction of each strip-shaped pit is a second setting direction perpendicular to the first setting direction; the width of the strip-shaped pit in the first setting direction is equal to the size of each of the light-emitting pixel units in the first setting direction; The light-emitting epitaxial layer in each of the pit structures is segmented and etched so that a plurality of light-emitting pixel units are formed in each of the pit structures, including: The block epitaxial layer in each of the pit structures is segmented and etched along a plurality of cutting tracks parallel to the first set direction to obtain a plurality of the luminous pixel units, wherein the spacing between each of the cutting tracks is equal to the size of each of the luminous pixel units in the second set direction.

13. The method for preparing a semiconductor light-emitting epitaxial layer according to claim 1, characterized in that: The pit structure is any one of a cylindrical pit, a cubic column pit or a triangular prism pit.

14. A method for preparing a semiconductor light-emitting device, characterized in that: include: Bonding the semiconductor light-emitting epitaxial layer prepared by the method for preparing a semiconductor light-emitting epitaxial layer according to any one of claims 1 to 13 to the driving structure layer; The substrate in the bonded semiconductor light-emitting epitaxial layer is etched away.

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