Anode structure, method for improving optical crosstalk of anode structure and silicon-based OLED display device
By performing multiple patterning etching of the anode layer of the Micro OLED display device, an incremental blank layer is formed to break the connection of the light layer, which solves the optical crosstalk problem caused by uneven thickness of the anode layer and improves the luminous efficiency and color gamut of the display device.
CN119698205APending Publication Date: 2025-03-25KUNSHAN IND TECHNOLOGY RESEARCH INSTITUTE SEMICONDUCTOR DISPLAY RESEARCH INSTITUTE CO LTD +1
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Patent Information
- Application Number
- CN202411894269.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-20
- Publication Date
- 2025-03-25
AI Technical Summary
Technical Problem
The existing Micro OLED display devices cause optical crosstalk due to uneven thickness of the anode layer, thereby reducing luminous efficiency, color gamut and gray scale characteristics.
Method used
By performing multiple patterning etching processes on the pixel definition layer covered on the anode layer, a blank layer is formed in the middle area of the anode layer, and the length of the blank layer is increased from top to bottom, thereby breaking the connection of the light layer and avoiding light crosstalk.
Benefits of technology
It has achieved the improvement of the luminous efficiency of silicon-based OLED display devices, improved color gamut and gray scale problems, and improved image clarity and color accuracy.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides an anode structure, a method for improving optical crosstalk of the anode structure and a silicon-based OLED (Organic Light Emitting Diode) display device. The method comprises the following steps: preparing anode layers distributed at intervals on a first substrate to obtain a second substrate; depositing on the second substrate to obtain a pixel definition layer, wherein the pixel definition layer comprises a first pixel definition layer covering the anode layer and a second pixel definition layer covering the first substrate; then patterning etching processing is conducted on the first pixel definition layer covering the anode layer, the steps are cycled at least twice, so that a blank layer is formed in the middle area of the first pixel definition layer after patterning etching processing, and the length of the blank layer in the direction close to the anode layer is gradually increased in sequence; the height of the light-emitting layer on the second pixel definition layer is higher than that of the light-emitting layer on the anode layer, so that the anode structure is obtained, connection of the light-emitting layers between the pixels can be disconnected, and finally mutual crosstalk light rays cannot be formed.
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