Chemical mechanical fine polishing composition for polishing gallium antimonide substrate

Through a chemical mechanical precision casting composition containing silicon sol abrasive, oxidizing agent and surface protecting agent, the problem of poor surface quality of gallium antimonide material during the polishing process is solved, and a high stability and low cost polishing liquid is achieved, which is suitable for the manufacturing of a variety of optoelectronic devices.

CN119709021AInactive Publication Date: 2025-03-28YIXIN MICROELECTRONIC MATERIALS (NANTONG) CO LTD
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Patent Information

Application Number
CN202411872886.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-18
Publication Date
2025-03-28
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

The existing gallium antimonide materials are prone to scratches, orange peel, fogging and rough surface problems during the polishing process, resulting in poor surface quality and insufficient stability of the polishing liquid, affecting industrial production.

Method used

A chemical mechanical precision casting composition for polishing gallium antimonide substrates is provided, including 5 to 20 wt% silicon sol abrasive, 0.1 to 1 wt% oxidant, 0.01 to 0.1 wt% surface protecting agent, and a balance of deionized water, an average particle size of 50 to 100 nm, an oxidant is sodium hypochlorite, and a surface protecting agent is an azole compound.

Benefits of technology

This polishing liquid can significantly improve the flatness and stability of the surface of gallium antimonide, avoid defects such as scratches and orange peel, and has a surface Ra value of less than 0.15nm. It is suitable for infrared detectors, lasers and other fields. The polishing liquid has good stability and a long service life.

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Abstract

The invention discloses a chemical mechanical fine polishing composition for polishing a gallium antimonide substrate, which comprises the following components in percentage by weight: 5 to 20 percent of silica sol abrasive, 0.1 to 1 percent of oxidant, 0.01 to 0.1 percent of surface protective agent and the balance of deionized water. The polishing solution provided by the invention is mainly applicable to gallium antimonide surface polishing in manufacturing of infrared detectors, sensors and optoelectronic devices, the polished gallium antimonide surface is good in state and free of surface defects such as scratches and orange peels, and meanwhile, the polishing solution can also be used for fine polishing of gallium arsenide and indium arsenide.
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