Microwave component secondary electron emission suppression method based on precision electroforming technology

By using precision electroforming technology to manufacture the regular "electronic trap" array structure on the surface of high-power microwave components, the problem of secondary electron multiplication is solved, and higher microdischarge thresholds and system stability are achieved.

CN119710852APending Publication Date: 2025-03-28XIAN INSTITUE OF SPACE RADIO TECH
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Patent Information

Application Number
CN202411879046.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-19
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

The prior art is difficult to effectively suppress the secondary electron multiplication effect in high-power microwave components, resulting in an increase in standing wave ratio and an increase in noise level of the microwave transmission system, affecting the normal operation of the system.

Method used

Using a manufacturing process based on precision electroforming technology, a regular "electronic trap" array structure is formed on the surface of microwave components. By preparing a metal array structure with controllable diameter, uniform distribution and regular arrangement, secondary electron emission is suppressed.

Benefits of technology

It effectively suppresses the secondary electron emission characteristics of the surface of microwave components, improves the microdischarge threshold, and enhances the stability and reliability of the system.

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Abstract

The invention discloses a microwave component secondary electron emission inhibition method based on a precise electroforming technology. The method comprises the following steps of silicon wafer surface cleaning, glue uniformizing, pre-baking, photoetching, developing, post-baking film erecting, stripping and precise electroforming replica of a silicon-based electron trap to a microwave device. According to the method, the regular electron trap structure array formed on the surface of the microwave component is controllable in size, regular in arrangement, high in length-diameter ratio, large in secondary electron emission characteristic suppression amplitude and good in uniformity, and suppression of secondary electron emission on the surface of the spacecraft high-power microwave component can be achieved.
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