New method for rapidly screening anti-tumor drugs by using field effect transistor
By using AlGaN/GaN field effect transistors to detect the electrical changes of drugs to cells, the problem of limited operation difficulty and long time during drug screening in the prior art is solved, and rapid and accurate screening of anti-tumor drugs is achieved, with high sensitivity and non-invasiveness.
Patent Information
- Application Number
- CN202411895073.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-21
- Publication Date
- 2025-03-28
AI Technical Summary
The prior art has problems such as difficulty in operation, possible damage to cell membranes, limited recording range and long time limitations in the drug screening process, making it difficult to achieve rapid and precise screening of anti-tumor drugs.
AlGaN/GaN field-effect transistors (HFETs) were used as biosensors to quickly screen the charge generation induced by B lymphoma cells by detecting drugs, use highly conductive regions to detect the electrical changes of the drug to cells, and use flow cytometry to verify the intrinsic concentration distribution of the drug.
It has achieved rapid screening of anti-tumor drugs, significantly shortened detection time, has high sensitivity and low sample requirements, and has non-invasive detection. It can deeply analyze the mechanism of drug action and is suitable for high-throughput drug screening scenarios.