Flow control method and device, storage medium and semiconductor processing equipment

By setting up a virtual chamber and a reaction chamber in a semiconductor device to detect and correct the gas flow, the first-piece effect problem caused by the pre-processing chamber is solved, and process stability and film thickness uniformity are improved.

CN119717903APending Publication Date: 2025-03-28BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Application Number
CN202311265614.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-09-27
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

In epitaxial equipment applications, the pretreatment chamber is in an idle state for a long time due to the long process time, resulting in the first-piece effect, which in turn affects the uniformity of the etching film thickness.

Method used

A flow control method is adopted to detect and correct the gas flow by setting up a virtual chamber and a reaction chamber in a semiconductor device and setting up a flow controller and a switch valve on the intake pipeline to compensate for temperature and flow changes and avoid the first-piece effect.

Benefits of technology

It effectively solves the problem of etching film thickness changes due to temperature and flow changes, and improves process stability and film thickness uniformity.

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Abstract

The invention discloses a flow control method and device, a storage medium and semiconductor processing equipment. The flow control method comprises the steps that a second switch valve is switched on, a first switch valve is switched off, and the first actual flow of preset gas in a gas pipeline is detected when a flow controller is set to be the first current preset target flow; the second switch valve is switched off, the first switch valve is switched on, and the current equivalent flow of the preset gas in the gas pipeline is detected when the flow controller is set to be the first current preset target flow; calculating current temperature change values of the reaction chamber and the virtual chamber; calculating a first flow correction coefficient of a flow controller according to the first current preset target flow and the first actual flow; calculating a second flow correction coefficient of the flow controller according to the current temperature change value; and correcting the first current preset target flow of the flow controller by adopting the first flow correction coefficient and the second flow correction coefficient. The problem that the thickness of the etched film changes can be solved, and the first sheet effect is restrained.
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