Damage control method and system for sapphire wafer cutting
By comprehensively analyzing the cutting state and auxiliary gas delivery state of the sapphire chip, a breakage risk prediction model is constructed, and the laser cutting process is optimized, which solves the problem of edge collapse phenomenon in sapphire chip cutting, and improves the yield and cutting efficiency of the chip.
CN119747916AActive Publication Date: 2025-04-04QINGDAO HUAXIN JINGDIAN TECH CO LTD +1
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Patent Information
- Application Number
- CN202510099412.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-22
- Publication Date
- 2025-04-04
- Estimated Expiration
- 2045-01-22
AI Technical Summary
Technical Problem
The prior art fails to effectively analyze and control the edge collapse phenomenon during the cutting of sapphire wafers, resulting in uneven quality of finished products after cutting, reducing the yield and cutting efficiency of the wafer.
Method used
By comprehensively analyzing the cutting state and auxiliary gas delivery state of sapphire chips, a collapse risk prediction model is constructed, the laser cutting process is optimized, and the cutting quality and stability are improved.
Benefits of technology
The prediction and control of the risk of edge collapse during the sapphire chip cutting process is achieved, the yield and overall performance of the chip are improved, and the cutting efficiency is improved.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention relates to the technical field of wafer cutting analysis, in particular to a damage control method and system for sapphire wafer cutting, and the method comprises the steps: analyzing the pre-cutting state of a sapphire wafer according to laser cutting control data and crystal bar manufacturing process data; analyzing the pre-conveying state of the auxiliary gas according to the auxiliary gas conveying data and the pre-cutting state analysis result of the sapphire wafer; evaluating the edge breakage risk of the sapphire wafer after laser cutting according to the crystal bar manufacturing process data and the edge breakage data of the sapphire wafer; a sapphire wafer edge breakage risk prediction model is constructed according to the pre-cutting state analysis result of the sapphire wafer, the pre-conveying state analysis result of the auxiliary gas and the edge breakage risk assessment result, and the edge breakage risk of the sapphire wafer to be cut is predicted; and the sapphire wafer laser cutting process is optimized. According to the invention, the sapphire wafer laser cutting process can be optimized; and the yield and the overall performance of the sapphire wafer are improved.
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