Atomic layer deposition spray system

By designing an atomic layer deposition spraying system in the atomic layer deposition process, the reaction gas is directly sprayed on the surface of the deposition substrate, solving the problem of uneven contact between the reaction gas and the deposition substrate, achieving a more efficient deposition process and more uniform thin film deposition.

CN119753639APending Publication Date: 2025-04-04GTA SEMICON CO LTD
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Patent Information

Application Number
CN202510039511.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-09
Publication Date
2025-04-04

AI Technical Summary

Technical Problem

In the atomic layer deposition process, the reaction gas contacts the surface of the deposition substrate unevenly, resulting in poor uniformity of the atomic layer film produced by deposition. Moreover, due to the extension of the gas conveying pipeline, the deposition period is extended, which reduces the deposition rate.

Method used

Atomic layer deposition spraying system is designed, and the bottom-up layering and sealing connection of the spray plate, sealing plate and cover plate are laminated from bottom to top to achieve direct spraying of the reaction gas on the surface of the deposition substrate, simplifying the gas conveying path and shortening the flow path of the reaction gas.

Benefits of technology

The gas supply rate of the reaction gas is improved, the deposition period is shortened, the deposition uniformity of the film is enhanced, and the efficiency of the atomic layer deposition process is improved.

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Abstract

The present application relates to an atomic layer deposition spray system. The atomic layer deposition spray system includes: a spray plate, a sealing plate and a cover plate stacked from bottom to top and sealed. The spray plate is provided with a plurality of spray holes; the sealing plate is provided with a plurality of spacing buffer cavities for isolating different reaction gases on one side close to the cover plate, and the sealing plate is provided with a plurality of gas guide columns on one side close to the spray plate; the air inlet of the gas guide column is connected to the corresponding spacing buffer cavity, and the exhaust port of the gas guide column is used to connect to the corresponding spray hole during spraying; the cover plate is provided with a plurality of gas inlet parts connecting each of the spacing buffer cavities. The present application can realize the independent control of different reaction gases, and can spray the reaction gas directly on the surface of the deposition substrate, thereby improving the gas supply rate of the reaction gas, effectively shortening the deposition cycle, and improving the deposition uniformity of the thin film.
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