Impedance detection method for plasma equipment and plasma circuit

By designing detection components in plasma equipment and calculating the impedance of the plasma loop, the problem of inaccurate calculation of plasma loop impedance in the prior art is solved, and the accurate characterization of the processing effect of the processing element to be processed and the improvement of processing accuracy is achieved.

CN119767507APending Publication Date: 2025-04-04JIANGSU MICROVIA NANO EQUIP TECH CO LTD
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Patent Information

Application Number
CN202411896756.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-20
Publication Date
2025-04-04

AI Technical Summary

Technical Problem

Existing plasma equipment cannot accurately calculate the plasma loop impedance above the component to be processed, resulting in inaccurate reaction of the processing effect.

Method used

A plasma device is designed, including a radio frequency power supply, a matcher, a reaction assembly and a detection assembly. By obtaining the voltage at the output of the matcher and the current of the reaction component, the phase difference and ratio of the voltage and current are calculated, and the circuit impedance of the plasma loop is calculated based on these parameters.

Benefits of technology

Accurate detection of the impedance of the plasma loop is realized, and the parameter characteristics of the components to be processed can be accurately reflected during the process processing, improving the processing accuracy.

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Abstract

The present application discloses a plasma device and an impedance detection method for a plasma circuit, wherein the input end of the matcher of the plasma device is connected to a radio frequency power supply for impedance matching of the radio frequency signal; the reaction component is connected to the output end of the matcher; the detection component is connected to the matcher and the reaction component respectively; wherein the reaction component includes a plasma circuit, the plasma circuit is located above the component to be processed, the plasma circuit is used to receive the radio frequency signal of the matcher and excite the gas in the reaction component into plasma, and the detection component is used to detect the loop impedance of the plasma circuit. The present application detects the loop impedance of the plasma circuit located above the component to be processed by the detection component, so that the loop impedance can accurately reflect the parameter characteristics of the component to be processed during the process, so that the user can characterize the processing effect of the component to be processed according to the loop impedance, thereby improving the accuracy of the component to be processed.
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