Insulation performance detection device for semiconductor insulation layer

Abstract

The invention relates to the technical field of detection devices, and discloses an insulating property detection device for a semiconductor insulating layer, which comprises a base, two support plates are symmetrically and fixedly mounted on the upper surface of the base, and a turntable is rotatably mounted between the two support plates. According to the invention, the fixed plates approach each other to move to drive a conducting strip at a groove of an L-shaped guide plate to be in contact with a guide column, so that a heating wire in the melting cylinder is electrified, the heating wire is heated instantly, colored soybean wax particles in the melting cylinder can be melted instantly through the heating of the heating wire, and the melted colored soybean wax particles become liquid; when pouring is carried out on the insulating layer, colored soybean wax liquid flows into the holes of the insulating layer from the leakage holes, colored soybean wax particles are left in the holes, whether the holes are formed in the insulating layer at the pins of the MOS transistor or not can be detected through the device, operators do not need to carry out manual detection and marking one by one, and the detection efficiency is greatly improved during batch detection.

Description

Technical Field

[0001] The present invention relates to the technical field of detection devices, and in particular to a device for detecting the insulation performance of a semiconductor insulation layer. Background Art

[0002] MOS transistor (Metal Oxide Semiconductor Field Effect Transistor) is a common field effect transistor (FET) widely used in electronic devices, especially in digital circuits and analog circuits. After the production of MOS transistors, a brown substance needs to be poured on its surface, usually a packaging resin (such as epoxy resin), which is used to protect the MOS transistor from the influence of the external environment, such as moisture, dust and chemical pollution, thereby increasing the reliability and service life of the components. When the MOS transistor is encapsulated with resin, due to the small gap between the pins and the mold retaining wall, it is difficult for the packaging resin to flow into the gap between the pins and the mold retaining wall, so that the pin area cannot be covered by the packaging resin to form a hole, resulting in the pin being exposed to the outside world, so a detection device is needed to detect the insulation of the insulating layer at the pin position.

[0003] When using the existing detection device, the operator needs to manually pick up the MOS transistors one by one, and then directly observe with the naked eye whether there are holes in the insulation layer at the pin position. After checking for holes, the operator needs to manually mark them. The manual detection and marking are slow, which greatly reduces the detection efficiency when testing MOS transistors in batches. Summary of the invention

[0004] The purpose of the present invention is to solve the shortcomings in the prior art and to propose an insulation performance detection device for a semiconductor insulation layer.

[0005] In order to achieve the above object, the present invention adopts the following technical solutions:

[0006] A device for detecting the insulation performance of a semiconductor insulating layer comprises a base, wherein two supporting plates are symmetrically fixedly installed on the upper surface of the base, a turntable is rotatably installed between the two supporting plates, a plurality of notches are equidistantly provided on the circumferential outer surface of the turntable, a MOS transistor is provided on the upper surface of the notches, a bracket is fixedly installed between the top ends of the two supporting plates, a T-shaped groove is provided on the upper surface of the bracket, two T-shaped sliders are symmetrically slidably installed on the inner wall of the T-shaped groove, a fixing plate is fixedly installed on the lower surface of the two T-shaped sliders, a melting cylinder is slidably inserted on the outer surface of the fixing plate close to the bottom end, the inner wall of the melting cylinder is hollow, a heating wire is fixedly installed between the inner walls of the opposite ends of the melting cylinder, an end of the melting cylinder away from the MOS transistor passes through the outer surface of the fixing plate and is fixedly installed with a circular plate, a third tension spring is sleeved on the outer surface of the melting cylinder, one end of the third tension spring is fixedly installed on the outer surface of the circular plate, and the other end of the third tension spring is fixedly installed on the outer surface of the fixing plate.

[0007] As a further solution of the present invention, a plurality of leakage holes are penetrated through one end of the melting cylinder near the MOS transistor, and one end of the heating wire near the MOS transistor penetrates through the outer surface of the melting cylinder and is flush with its end surface, a material storage barrel is fixedly installed on the outer surface of the melting cylinder near the top, and the material storage barrel is connected to the interior of the melting cylinder, and an L-shaped guide plate is fixedly installed on the outer surface of the fixing plate near the bottom end.

[0008] As a further solution of the present invention, a groove is provided at one end of the L-shaped guide plate close to the MOS transistor, a conductive sheet is provided on the inner wall of the groove, a battery power supply is provided on the outer surface of the L-shaped guide plate, the conductive sheet is electrically connected to the battery power supply, the other end of the heating wire passes through the other end of the melting cylinder and is electrically connected to a wire, and the wire is electrically connected to the battery power supply.

[0009] As a further solution of the present invention, two limit plates are symmetrically fixedly installed on the upper surface of the notch, the MOS transistor is arranged between the two limit plates, a rotating plate is rotatably installed on the side of the notch, a pressure plate is fixedly installed on the bottom end of the rotating plate, the pressure plate is arranged on the upper surface of the MOS transistor, and a second tension spring is rotatably installed on the outer surface of the rotating plate close to the MOS transistor, and the other end of the second tension spring is rotatably connected to the outer surface of the notch.

[0010] As a further solution of the present invention, two pins are symmetrically arranged on the outer surface of one end of the MOS transistor away from the limit plate, and two through holes are symmetrically opened on the upper surface of the pressure plate, and guide pillars are slidably installed on the inner walls of the two through holes, and the bottom ends of the two guide pillars pass through the lower surface of the pressure plate and abut against the outer surfaces of the two pins, and the outer surfaces of the two guide pillars near the top are fixedly installed with baffles, and the outer surfaces of the guide pillars are sleeved with a first tension spring, and the top of the first tension spring is fixedly connected to the lower surface of the baffle, and the bottom end of the first tension spring is fixedly connected to the upper surface of the pressure plate, and the conductive sheet abuts against the outer surface of the guide pillar near the top.

[0011] As a further solution of the present invention, a fixed disk is fixedly installed on the outer surface of one of the support plates close to the turntable, and an arc protrusion is provided on the circumferential outer surface of the fixed disk. The fixed disk, turntable and arc protrusion are arranged at the same center of a circle, and a rotating arm is fixedly installed on one end of the rotating mounting fulcrum of the rotating plate, and a sliding column is fixedly installed on the bottom end of the rotating arm, and the sliding column is abutted against the outer surface of the fixed disk.

[0012] As a further solution of the present invention, a shell is fixedly installed on the outer surface of one of the support plates opposite to the turntable, a driven sheave is rotatably installed on the outer surface of the support plate close to the shell, and an active dial is also rotatably installed on the outer surface of the support plate close to the shell, the active dial is meshed with the driven sheave, a driving motor is fixedly installed on the outer surface of the shell, the output end of the driving motor passes through the outer surface of the shell and is fixedly installed with the rotation center of the active dial, and a plurality of radial grooves are equidistantly provided in the circumferential direction of the outer surface of the driven sheave, and the number of the radial grooves is set the same as the number of the notches.

[0013] As a further solution of the present invention, two support blocks are symmetrically fixedly installed on the upper surface of the bracket, a rotating wheel is rotatably installed between the two support blocks, two driving grooves are symmetrically opened on the outer surface of the rotating wheel, driving columns are fixedly installed on the upper surfaces of the two T-shaped sliders, and the driving columns are slidably installed on the inner walls of the driving grooves, one end of the rotating wheel passes through the outer surface of the support block and a second pulley is fixedly installed, the output end of the driving motor is fixedly installed with a first pulley, and the outer surfaces of the first pulley and the second pulley are sleeved with belts.

[0014] As a further solution of the present invention, a compression cylinder is fixedly installed on the outer surface of the bottom end of the fixed plate close to the MOS transistor side, and an air nozzle is fixedly installed on the outer surface of one end of the compression cylinder, and the air nozzle is arranged below the melting cylinder. A connecting rod is fixedly installed on the outer surface of the circular plate, and a push rod is fixedly installed on the bottom end of the connecting rod. The other end of the push rod passes through the outer surface of the fixed plate and is slidably installed therewith. A compression plate is fixedly installed on the other end of the push rod, and the compression plate is slidably installed on the inner wall of the compression cylinder. A limiting protrusion is provided on the circumferential outer surface of the melting cylinder, and a limiting groove matching the limiting protrusion is provided on the inner wall of the fixed plate, and the limiting protrusion is slidably installed on the inner wall of the limiting groove.

[0015] Compared with the prior art, the present invention has the following beneficial effects:

[0016] 1. The fixed plates move towards each other, which will drive the L-shaped guide plate to move towards the guide column. The conductive sheet at the groove of the L-shaped guide plate will contact the guide column, so that the heating wire inside the melting cylinder is energized, and the heating wire will instantly heat up. The heating of the heating wire can instantly melt the colored soybean wax particles inside the melting cylinder. The melted colored soybean wax particles will become liquid, and the colored soybean wax liquid will flow from the leak hole into the holes of the insulating layer. Colored soybean wax particles will remain in the holes. This device can detect whether the insulating layer at the pins of the MOS transistor forms holes during pouring, without the need for operators to manually detect and mark one by one, which greatly improves the efficiency of detection in batch detection;

[0017] 2. The driving motor drives the active dial to rotate, the active dial drives the driven groove wheel to rotate intermittently, and the driven groove wheel drives the turntable to rotate intermittently. When the turntable rotates, the sliding column is driven to slide along the circumferential outer surface of the fixed disk through the rotating arm. Due to the action of the second tension spring, the sliding column slides down from the arc protrusion, and the rotating plate is driven by the rotating arm to move close to the MOS transistor. The rotating plate drives the pressure plate to firmly press on the upper surface of the MOS transistor. The position of the MOS transistor can be quickly fixed through this device, which is convenient for subsequent detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic diagram of the overall structure of a device for detecting the insulation performance of a semiconductor insulation layer proposed by the present invention;

[0019] Figure 2 A rear structural schematic diagram of a device for detecting insulation performance of a semiconductor insulation layer proposed by the present invention;

[0020] Figure 3 A schematic diagram of the structure of a turntable of a semiconductor insulating layer insulation performance detection device proposed by the present invention;

[0021] Figure 4A schematic diagram of a driven sheave of a device for detecting insulation properties of a semiconductor insulation layer proposed by the present invention;

[0022] Figure 5 A schematic diagram of a rotating wheel of a semiconductor insulating layer insulation performance detection device proposed by the present invention;

[0023] Figure 6 A schematic diagram of a driving column of a device for detecting the insulation performance of a semiconductor insulating layer proposed by the present invention;

[0024] Figure 7 A schematic cross-sectional view of a melting cylinder of a device for detecting insulation properties of a semiconductor insulation layer proposed by the present invention;

[0025] Figure 8 A schematic diagram of a driving slot of a device for detecting insulation performance of a semiconductor insulation layer proposed by the present invention;

[0026] Fig. 9 for Figure 2 A partial enlarged schematic diagram in the middle;

[0027] Fig.10 This is a schematic diagram of the unfolding of the rotating wheel of the insulation performance detection device for a semiconductor insulation layer proposed by the present invention.

[0028] In the figure: 1, base; 2, support plate; 3, turntable; 4, notch; 401, rotating plate; 402, limit plate; 403, MOS transistor; 404, pressure plate; 405, guide column; 406, baffle; 407, first tension spring; 408, second tension spring; 409, rotating arm; 410, slide column; 5, fixed plate; 501, arc protrusion; 6, bracket; 7, housing; 8, driving motor; 9, active dial; 10, driven groove wheel; 11, first pulley; 1 2. Belt; 13. Second pulley; 14. Support block; 15. Rotating wheel; 16. Driving groove; 17. Driving column; 18. T-shaped slider; 19. T-shaped slide groove; 20. Fixed plate; 21. L-shaped guide plate; 22. Wire; 23. Battery power supply; 24. Compression cylinder; 25. Air jet; 26. Melting cylinder; 27. Storage barrel; 28. Round plate; 29. ​​Third tension spring; 30. Push rod; 31. Compression plate; 32. Heating wire; 33. Limiting protrusion; 34. Leakage hole. DETAILED DESCRIPTION

[0029] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further explained below in conjunction with specific implementation methods.

[0030] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "two ends", "one end", "the other end" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0031] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "provided with", "connected", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0032] Reference Figure 1-Figure 10A device for detecting the insulation performance of a semiconductor insulating layer comprises a base 1, two supporting plates 2 are symmetrically fixedly installed on the upper surface of the base 1, a turntable 3 is rotatably installed between the two supporting plates 2, a plurality of notches 4 are equidistantly provided on the circumferential outer surface of the turntable 3, a MOS transistor 403 is provided on the upper surface of the notch 4, a bracket 6 is fixedly installed between the top ends of the two supporting plates 2, a T-shaped slide groove 19 is provided on the upper surface of the bracket 6, two T-shaped sliders 18 are symmetrically slidably installed on the inner wall of the T-shaped slide groove 19, a fixing plate 20 is fixedly installed on the lower surface of the two T-shaped sliders 18, and a melting plate 20 is slidably inserted on the outer surface of the fixing plate 20 near the bottom end The inner wall of the melting cylinder 26 is hollow, and a heating wire 32 is fixedly installed between the inner walls of the two opposite ends of the melting cylinder 26. The end of the melting cylinder 26 away from the MOS transistor 403 penetrates the outer surface of the fixed plate 20 and is fixedly installed with a circular plate 28. The outer surface of the melting cylinder 26 is sleeved with a third tension spring 29, one end of the third tension spring 29 is fixedly installed with the outer surface of the circular plate 28, and the other end of the third tension spring 29 is fixedly installed with the outer surface of the fixed plate 20. A plurality of leakage holes 34 are opened through the end of the melting cylinder 26 close to the MOS transistor 403, and the end of the heating wire 32 close to the MOS transistor 403 penetrates the outer surface of the melting cylinder 26. The surface is flush with its end surface, a material storage barrel 27 is fixedly installed on the outer surface of the melting barrel 26 near the top, and the material storage barrel 27 is connected to the inside of the melting barrel 26. An L-shaped guide plate 21 is fixedly installed on the outer surface of the fixing plate 20 near the bottom side, and a groove is provided at one end of the L-shaped guide plate 21 near the MOS transistor 403, and a conductive sheet is provided on the inner wall of the groove. A battery power supply 23 is provided on the outer surface of the L-shaped guide plate 21, and the conductive sheet is electrically connected to the battery power supply 23. The other end of the heating wire 32 passes through the other end of the melting barrel 26 and is electrically connected to the wire 22, and the wire 22 is electrically connected to the battery power supply 23. The MOS transistor 403 is away from the limit Two pins are symmetrically arranged on the outer surface of one end of the positioning plate 402, and two through holes are symmetrically opened on the upper surface of the pressure plate 404. Guide pillars 405 are slidably installed on the inner walls of the two through holes. The bottom ends of the two guide pillars 405 pass through the lower surface of the pressure plate 404 and abut against the outer surfaces of the two pins. A blocking piece 406 is fixedly installed on the outer surface of the two guide pillars 405 near the top. A first tension spring 407 is sleeved on the outer surface of the guide pillar 405. The top of the first tension spring 407 is fixedly connected to the lower surface of the blocking piece 406, and the bottom end of the first tension spring 407 is fixedly connected to the upper surface of the pressure plate 404, and the conductive sheet abuts against the outer surface of the guide pillar 405 near the top.

[0033] The two fixed plates 20 are driven to move toward or away from each other intermittently by the two T-shaped sliders 18. When the two fixed plates 20 move toward each other, the melting tube 26 is driven to move toward the MOS transistor 403, so that the tip of the melting tube 26 abuts against the insulating layer of the MOS transistor 403 near the pin. If there is a hole in the insulating layer near the pin of the MOS transistor 403, the tip of the melting tube 26 abuts against the outer surface of the pin inside the insulating layer. At the same time, the fixed plates 20 move toward each other, which drives the L-shaped guide plate 21 to move toward the guide post 405. The conductive sheet at the groove of the L-shaped guide plate 21 contacts the guide post 405, so that the heating wire 32 inside the melting tube 26 is energized, and the heating wire 32 is instantly heated. The temperature of the heating wire 32 can instantly melt the colored soybean wax particles inside the melting tube 26, and the melted colored soybean wax particles will become liquid and expand in volume. Since the colored soybean wax particles inside the storage barrel 27 melt slowly, the colored soybean wax liquid will flow from the leak hole 34 into the holes in the insulating layer, and colored soybean wax particles will remain in the holes. When there are no holes in the insulating layer, the tip of the melting tube 26 will not press against the pin of the MOS transistor 403, and the heating wire 32 will not be powered on and heated. The device can detect whether holes are formed in the insulating layer at the pin of the MOS transistor 403 during pouring, without the need for operators to manually detect and mark them one by one, which greatly improves the detection efficiency during batch detection.

[0034] In this embodiment, two limit plates 402 are symmetrically fixedly installed on the upper surface of the notch 4, and the MOS transistor 403 is arranged between the two limit plates 402. A rotating plate 401 is rotatably installed on the side of the notch 4, and a pressure plate 404 is fixedly installed on the bottom end of the rotating plate 401. The pressure plate 404 is arranged on the upper surface of the MOS transistor 403. A second tension spring 408 is rotatably installed on the outer surface of the rotating plate 401 close to the MOS transistor 403, and the other end of the second tension spring 408 is rotatably connected to the outer surface of the notch 4. A fixed disk 5 is fixedly installed on the outer surface of one of the support plates 2 close to the turntable 3. An arc protrusion 501 is arranged on the circumferential outer surface of the fixed disk 5. The fixed disk 5, the turntable 3 and the arc protrusion 501 are arranged at the same center of the circle, and the rotating A rotating arm 409 is fixedly installed at one end of the rotating mounting fulcrum of the plate 401, and a sliding column 410 is fixedly installed at the bottom end of the rotating arm 409. The sliding column 410 is against the outer surface of the fixed plate 5. A shell 7 is fixedly installed on the outer surface of one of the support plates 2 opposite to the turntable 3. A driven sheave 10 is rotatably installed on the outer surface of the support plate 2 close to the shell 7. An active dial 9 is also rotatably installed on the outer surface of the support plate 2 close to the shell 7. The active dial 9 is meshed with the driven sheave 10. A driving motor 8 is fixedly installed on the outer surface of the shell 7. The output end of the driving motor 8 passes through the outer surface of the shell 7 and is fixedly installed at the rotation center of the active dial 9. A plurality of radial grooves are equidistantly provided on the outer surface of the driven sheave 10 in the circumferential direction. The number of radial grooves is set the same as the number of notches 4.

[0035] The driving motor 8 drives the active dial 9 to rotate, and the active dial 9 drives the driven groove wheel 10 to rotate intermittently, and the driven groove wheel 10 drives the turntable 3 to rotate intermittently. When the turntable 3 rotates, the sliding column 410 is driven to slide along the circumferential outer surface of the fixed disk 5 through the rotating arm 409. Due to the force of the second tension spring 408, after the sliding column 410 slides down from the arc protrusion 501, it drives the rotating plate 401 to move close to the MOS transistor 403 through the rotating arm 409. The rotating plate 401 drives the pressure plate 404 to firmly press on the upper surface of the MOS transistor 403. The position of the MOS transistor 403 can be quickly fixed by this device, which is convenient for subsequent detection.

[0036] In this embodiment, two support blocks 14 are symmetrically fixedly installed on the upper surface of the bracket 6, a rotating wheel 15 is rotatably installed between the two support blocks 14, and two driving grooves 16 are symmetrically provided on the outer surface of the rotating wheel 15. The upper surfaces of the two T-shaped sliders 18 are fixedly installed with driving columns 17, and the driving columns 17 are slidably installed with the inner walls of the driving grooves 16. One end of the rotating wheel 15 passes through the outer surface of the support block 14 and is fixedly installed with a second pulley 13. The output end of the drive motor 8 is fixedly installed with a first pulley 11, and the outer surfaces of the first pulley 11 and the second pulley 13 are sleeved with a belt 12. The outer surface of the bottom end of the fixed plate 20 near the MOS transistor 403 side A compression cylinder 24 is fixedly installed on the surface, an air nozzle 25 is fixedly installed on the outer surface of one end of the compression cylinder 24, and the air nozzle 25 is arranged below the melting cylinder 26. A connecting rod is fixedly installed on the outer surface of the circular plate 28, and a push rod 30 is fixedly installed on the bottom end of the connecting rod. The other end of the push rod 30 penetrates the outer surface of the fixed plate 20 and is slidably installed therewith. A compression plate 31 is fixedly installed on the other end of the push rod 30, and the compression plate 31 is slidably installed with the inner wall of the compression cylinder 24. A limiting protrusion 33 is provided on the circumferential outer surface of the melting cylinder 26, and a limiting groove matching the limiting protrusion 33 is provided on the inner wall of the fixed plate 20. The limiting protrusion 33 is slidably installed with the inner wall of the limiting groove.

[0037] The first pulley 11 is driven to rotate by the driving motor 8, and the first pulley 11 drives the second pulley 13 to rotate through the belt 12, and the second pulley 13 drives the rotating wheel 15 to rotate. The rotating wheel 15 drives the two T-shaped sliders 18 to intermittently move closer to or away from each other through the cooperation of the two driving grooves 16 and the driving column 17. When the two fixed plates 20 move away from each other, the melting cylinder 26 is reset by the force of the third tension spring 29. The melting cylinder 26 drives the push rod 30 to move close to the air nozzle 25 through the circular plate 28 and the connecting rod. The push rod 30 presses the air inside the compression cylinder 24 through the compression plate 31 to be ejected from the air nozzle 25. The air ejected from the air nozzle 25 will blow on the tip of the melting cylinder 26. Through this device, the colored soybean wax liquid at the tip of the melting cylinder 26 is quickly solidified into a solid, so as to avoid the colored soybean wax liquid from dripping from the melting cylinder 26 when not marked, resulting in waste of colored soybean wax.

[0038] It should be noted that, before using the present invention, the operator adds a certain amount of colored soybean wax particles into the storage barrel 27; when in use, the operator manually inserts the MOS transistor 403 between the two limit plates 402 of the horizontal notch 4 on the left side when the turntable 3 stops rotating;

[0039] The driving motor 8 drives the active dial 9 to rotate, and the active dial 9 drives the driven groove wheel 10 to rotate intermittently, and the driven groove wheel 10 drives the turntable 3 to rotate intermittently. When the turntable 3 rotates, the sliding column 410 is driven to slide along the circumferential outer surface of the fixed plate 5 through the rotating arm 409. Due to the force of the second tension spring 408, after the sliding column 410 slides down from the arc protrusion 501, it drives the rotating plate 401 to move close to the MOS transistor 403 through the rotating arm 409. The rotating plate 401 drives the pressing plate 404 to firmly press on the upper surface of the MOS transistor 403. The position of the MOS transistor 403 can be quickly fixed by this device, which is convenient for subsequent detection.

[0040] When the pressing plate 404 presses the upper surface of the MOS transistor 403, it drives the two guide pillars 405 to move close to the two pins of the MOS transistor 403. The bottom of the guide pillar 405 is pressed against the upper surface of the two pins by the first tension spring 407, so that the guide pillar 405 is electrically connected to the pins.

[0041] When the turntable 3 stops rotating, the first pulley 11 is driven to rotate by the driving motor 8, the first pulley 11 drives the second pulley 13 to rotate through the belt 12, the second pulley 13 drives the rotating wheel 15 to rotate, the rotating wheel 15 drives the two T-shaped sliders 18 to move intermittently closer to or away from each other through the cooperation of the two driving grooves 16 and the driving column 17, and drives the two fixed plates 20 to move intermittently closer to or away from each other through the two T-shaped sliders 18. When the two fixed plates 20 move closer to each other, the melting cylinder 26 is driven to move closer to the MOS transistor 403, so that the tip of the melting cylinder 26 is against the insulating layer position of the MOS transistor 403 close to the pin. If there is a hole in the insulating layer of the MOS transistor 403 close to the pin, the tip of the melting cylinder 26 will be against the outer surface of the pin inside the insulating layer. At the same time, the L-shaped guide plate 21 is driven to move closer to the guide column 4 through the movement of the fixed plates 20 close to each other. 05 movement, the conductive sheet at the groove of the L-shaped guide plate 21 will contact the guide column 405, so that the heating wire 32 inside the melting cylinder 26 is energized, and the heating wire 32 will instantly heat up. The heating of the heating wire 32 can instantly melt the colored soybean wax particles inside the melting cylinder 26, and the melted colored soybean wax particles will become liquid, and the volume will expand. Since the colored soybean wax particles inside the storage barrel 27 melt slowly, the colored soybean wax liquid will flow from the leak hole 34 into the holes in the insulating layer, and colored soybean wax particles will remain in the holes. When there are no holes in the insulating layer, the tip of the melting cylinder 26 will not press against the pin of the MOS transistor 403, and the heating wire 32 will not be energized and heated. Through this device, it is possible to detect whether the insulating layer at the pin of the MOS transistor 403 forms holes during pouring, without the need for operators to manually detect and mark one by one, which greatly improves the efficiency of detection during batch detection;

[0042] When the two fixed plates 20 move away from each other, the melting cylinder 26 is reset by the force of the third tension spring 29, and the melting cylinder 26 drives the push rod 30 to move close to the air nozzle 25 through the circular plate 28 and the connecting rod. The push rod 30 compresses the air inside the compression cylinder 24 through the compression plate 31 to be ejected from the air nozzle 25. The air ejected from the air nozzle 25 will blow on the tip of the melting cylinder 26. Through this device, the colored soy wax liquid at the leakage hole 34 at the tip of the melting cylinder 26 is quickly solidified into a solid, so as to avoid the colored soy wax liquid from dripping from the melting cylinder 26 when not marked, resulting in waste of colored soy wax.

[0043] When the turntable 3 continues to rotate intermittently, it will drive the tested MOS transistor 403 to move to the position directly below. Because the slide column 410 contacts the arc protrusion 501, the pressure plate 404 releases the position fixation of the MOS transistor 403, and the MOS transistor 403 will fall into the collection box below and wait for use in the next process.

[0044] The control method of the electrical components in this solution is controlled by an external controller matched therewith, and the control circuit can be realized by simple programming by technicians in this field. It belongs to the common knowledge in this field and is only used without improvement. In addition, the present invention is mainly used to protect mechanical devices, so the present invention will not explain the control method and circuit connection in detail.

[0045] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited by the above embodiments, and the above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, and these changes and improvements all fall within the scope of the present invention to be protected.

Claims

1. A device for detecting the insulation performance of a semiconductor insulating layer, comprising a base (1), characterized in that: Two support plates (2) are symmetrically fixedly mounted on the upper surface of the base (1); a turntable (3) is rotatably mounted between the two support plates (2); a plurality of notches (4) are equidistantly provided on the circumferential outer surface of the turntable (3); a MOS transistor (403) is arranged on the upper surface of the notches (4); a bracket (6) is fixedly mounted between the top ends of the two support plates (2); a T-shaped slide groove (19) is provided on the upper surface of the bracket (6); two T-shaped sliders (18) are symmetrically slidably mounted on the inner wall of the T-shaped slide groove (19); a fixing plate (20) is fixedly mounted on the lower surface of the two T-shaped sliders (18); A melting cylinder (26) is slidably inserted into the outer surface of the fixed plate (20) near the bottom end, and the inner wall of the melting cylinder (26) is hollow. A heating wire (32) is fixedly installed between the inner walls at opposite ends of the melting cylinder (26). One end of the melting cylinder (26) away from the MOS transistor (403) passes through the outer surface of the fixed plate (20) and is fixedly installed with a circular plate (28). The outer surface of the melting cylinder (26) is sleeved with a third tension spring (29), one end of the third tension spring (29) is fixedly installed on the outer surface of the circular plate (28), and the other end of the third tension spring (29) is fixedly installed on the outer surface of the fixed plate (20).

2. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 1, characterized in that: A plurality of leakage holes (34) are formed through one end of the melting cylinder (26) close to the MOS transistor (403); one end of the heating wire (32) close to the MOS transistor (403) passes through the outer surface of the melting cylinder (26) and is flush with its end surface; a material storage barrel (27) is fixedly installed on the outer surface of the melting cylinder (26) close to the top; the material storage barrel (27) is connected to the inside of the melting cylinder (26); and an L-shaped guide plate (21) is fixedly installed on the outer surface of the fixing plate (20) close to the bottom end.

3. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 2, characterized in that: A groove is provided at one end of the L-shaped guide plate (21) close to the MOS transistor (403), a conductive sheet is provided on the inner wall of the groove, a battery power source (23) is provided on the outer surface of the L-shaped guide plate (21), the conductive sheet is electrically connected to the battery power source (23), the other end of the heating wire (32) passes through the other end of the melting cylinder (26) and is electrically connected to a wire (22), and the wire (22) is electrically connected to the battery power source (23).

4. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 3, characterized in that: Two limit plates (402) are symmetrically fixedly mounted on the upper surface of the notch (4); the MOS transistor (403) is arranged between the two limit plates (402); a rotating plate (401) is rotatably mounted on the side of the notch (4); a pressing plate (404) is fixedly mounted on the bottom end of the rotating plate (401); the pressing plate (404) is arranged on the upper surface of the MOS transistor (403); a second tension spring (408) is rotatably mounted on the outer surface of the rotating plate (401) on a side close to the MOS transistor (403); the other end of the second tension spring (408) is rotatably connected to the outer surface of the notch (4).

5. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 4, characterized in that: Two pins are symmetrically arranged on the outer surface of one end of the MOS transistor (403) away from the limiting plate (402), and two through holes are symmetrically opened on the upper surface of the pressing plate (404), and guide pillars (405) are slidably installed on the inner walls of the two through holes, and the bottom ends of the two guide pillars (405) penetrate the lower surface of the pressing plate (404) and abut against the outer surfaces of the two pins, and the outer surfaces of the two guide pillars (405) near the top are fixedly installed with blocking sheets (406), and the outer surfaces of the guide pillars (405) are sleeved with a first tension spring (407), and the top of the first tension spring (407) is fixedly connected to the lower surface of the blocking sheet (406), and the bottom end of the first tension spring (407) is fixedly connected to the upper surface of the pressing plate (404), and the conductive sheet abuts against the outer surface of the guide pillar (405) near the top.

6. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 1, characterized in that: A fixed disk (5) is fixedly mounted on the outer surface of one of the support plates (2) close to the rotating disk (3); a circular arc protrusion (501) is arranged on the circumferential outer surface of the fixed disk (5); the fixed disk (5), the rotating disk (3) and the circular arc protrusion (501) are arranged at the same center of a circle; a rotating arm (409) is fixedly mounted on the end surface of one end of the rotating center of the rotating plate (401); a sliding column (410) is fixedly mounted on the bottom end of the rotating arm (409); and the sliding column (410) abuts against the outer surface of the fixed disk (5).

7. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 1, characterized in that: A housing (7) is fixedly mounted on the outer surface of one of the support plates (2) on the side opposite to the rotating disk (3); a driven sheave (10) is rotatably mounted on the outer surface of the support plate (2) close to the housing (7); a driving dial (9) is also rotatably mounted on the outer surface of the support plate (2) close to the housing (7); the driving dial (9) is meshed with the driven sheave (10); a driving motor (8) is fixedly mounted on the outer surface of the housing (7); an output end of the driving motor (8) passes through the outer surface of the housing (7) and is fixedly mounted at the rotation center of the driving dial (9); a plurality of radial grooves are equidistantly provided on the outer surface of the driven sheave (10) in the circumferential direction; the number of the radial grooves is set to be the same as the number of the notches (4).

8. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 7, characterized in that: Two support blocks (14) are symmetrically fixedly installed on the upper surface of the bracket (6), a rotating wheel (15) is rotatably installed between the two support blocks (14), and two driving grooves (16) are symmetrically opened on the outer surface of the rotating wheel (15). A driving column (17) is fixedly installed on the upper surface of the two T-shaped sliders (18), and the driving column (17) is slidably installed with the inner wall of the driving groove (16). One end of the rotating wheel (15) passes through the outer surface of the support block (14) and is fixedly installed with a second pulley (13). The output end of the driving motor (8) is fixedly installed with a first pulley (11), and the outer surfaces of the first pulley (11) and the second pulley (13) are sleeved with belts (12).

9. The device for detecting the insulation performance of a semiconductor insulating layer according to claim 7, characterized in that: A compression cylinder (24) is fixedly mounted on the outer surface of the bottom end of the fixed plate (20) near the MOS transistor (403), and an air nozzle (25) is fixedly mounted on the outer surface of one end of the compression cylinder (24). The air nozzle (25) is arranged below the melting cylinder (26). A connecting rod is fixedly mounted on the outer surface of the circular plate (28), and a push rod (30) is fixedly mounted on the bottom end of the connecting rod. The other end of the push rod (30) penetrates the outer surface of the fixed plate (20) and is slidably mounted thereon. A compression plate (31) is fixedly mounted on the other end of the push rod (30), and the compression plate (31) is slidably mounted on the inner wall of the compression cylinder (24). A limiting protrusion (33) is arranged on the circumferential outer surface of the melting cylinder (26), and a limiting groove matching the limiting protrusion (33) is arranged on the inner wall of the fixing plate (20). The limiting protrusion (33) is slidably mounted on the inner wall of the limiting groove.

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