Semiconductor equipment radiation response test method and device based on natural muon event

Abstract

The invention relates to the technical field of radiation imaging and radiation effect measurement, and provides a semiconductor equipment radiation response test method and device based on a natural muon event. According to the method, muon counters are placed in the upper and lower positions of a to-be-tested semiconductor device, and the two muon counters are turned on at the same time in the working process of the to-be-tested semiconductor device; recording muon events passing through the sensor to be detected through coincidence counting of the upper muon counter and the lower muon counter; according to the time and track information marked by the muon event, extracting output data of the to-be-tested semiconductor equipment; the influence of muon events in cosmic rays on the to-be-tested semiconductor equipment is analyzed according to the extracted output data, detection and analysis on the radiation effect of the semiconductor equipment under the non-radiation source condition are achieved, and the problem of how to efficiently evaluate the radiation effect and the protection capacity of the semiconductor equipment in the in-orbit radiation environment is solved.

Description

Technical Field

[0001] This application relates to the field of radiation imaging and radiation effect measurement technology, and in particular to a method and apparatus for testing the radiation response of semiconductor devices based on natural muon events. Background Technology

[0002] When space telescopes are in orbit, they rely on guide instruments within precision image stabilization systems to provide high-frame-rate real-time star information. This guides the telescope's line of sight to correct for minor jitter and meets the stabilization requirements of long-exposure deep-space observations. However, cosmic rays can interfere with the stability and accuracy of semiconductor devices in this stabilization system, such as CMOS sensors, leading to attitude misjudgments, telescope deviation from the target, and image stabilization failure. Therefore, for scenarios where guide instruments have extremely high real-time requirements, it is urgent to study the impact of cosmic rays on the stability and accuracy of semiconductor devices.

[0003] Traditional experiments on the effects of cosmic radiation typically rely on accelerators to generate high-energy particles that bombard a target surface. However, such experiments are not only expensive but also potentially damaging to semiconductor devices because imaging requires exposure to irradiation conditions. As an alternative, utilizing background radiation generated by atmospheric showers is an economical and safe method. However, natural cosmic ray events are random and have low flux, often requiring long exposures lasting several hours to capture only a small number of valid events. Therefore, it is difficult to accurately measure the impact of cosmic rays on the operational stability and accuracy of semiconductor devices using natural cosmic ray events. Summary of the Invention

[0004] In view of this, embodiments of this application provide a method and apparatus for testing the radiation response of semiconductor devices based on natural muon events, in order to solve the problem that the cost of existing methods for determining the radiation response of semiconductor devices based on traditional cosmic radiation effect experiments is high.

[0005] A first aspect of this application provides a method for testing the radiation response of a semiconductor device based on natural muon events, comprising:

[0006] A first muon counter is set above the semiconductor device under test, and a second muon counter is set below the semiconductor device under test;

[0007] Apply background radiation so that it passes through the first muon counter, the semiconductor device under test, and the second muon counter;

[0008] The first muon counter and the second muon counter are used to perform coincidence counting and record muon events; wherein, the recorded muon events include at least the time of occurrence of the muon event and information on the muon's trajectory.

[0009] Determine the location of muon events in the semiconductor device under test based on muon motion trajectory information;

[0010] The output data of the semiconductor device under test is determined based on the time and location of the muon event. The output data is then analyzed and processed to obtain the radiation response of the semiconductor device under test to the muon event.

[0011] A second aspect of this application provides a semiconductor device radiation response testing apparatus based on natural muon events, comprising:

[0012] The setup module is configured to set a first muon counter above the semiconductor device under test and a second muon counter below the semiconductor device under test.

[0013] The radiation module is configured to apply background radiation, which passes through the first muon counter, the semiconductor device under test, and the second muon counter.

[0014] The detection module is configured to perform coincidence counting using a first muon counter and a second muon counter, and to record muon events; wherein the recorded muon events include at least the time of occurrence of the muon event and information on the muon's motion trajectory.

[0015] The determination module is configured to determine the location of muon events in the semiconductor device under test based on muon motion trajectory information.

[0016] The test module is configured to determine the output data of the semiconductor device under test based on the occurrence time and location of the muon event, analyze and process the output data, and obtain the radiation response of the semiconductor device under test to the muon event.

[0017] A third aspect of this application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the above-described method.

[0018] A fourth aspect of this application provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the above-described method.

[0019] The beneficial effects of this application embodiment compared with the prior art are as follows: This application embodiment places a muon counter above and below the semiconductor device under test, and simultaneously turns on two muon counters during the operation of the semiconductor device under test; records muon events passing through the sensor under test by the coincidence count of the upper and lower muon counters; extracts the output data of the semiconductor device under test based on the time and trajectory information marked by the muon events; and analyzes the impact of muon events in cosmic rays on the semiconductor device under test based on the extracted output data, realizing the detection and analysis of the radiation effect of semiconductor devices under non-radiation source conditions, and solving the problem of how to efficiently evaluate the radiation effect and protection capability of semiconductor devices in the on-orbit radiation environment. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a schematic flowchart of a semiconductor device radiation response testing method based on natural muon events, according to an embodiment of this application.

[0022] Figure 2 This is a schematic diagram of the system for implementing the semiconductor device radiation response testing method based on natural muon events provided in the embodiments of this application.

[0023] Figure 3 This is a schematic diagram of the structure of the muon counter provided in the embodiments of this application.

[0024] Figure 4 This is an image of high-energy particles extracted according to an embodiment of this application.

[0025] Figure 5 This is a schematic diagram of a semiconductor device radiation response testing apparatus based on natural muon events, provided in an embodiment of this application.

[0026] Figure 6 This is a schematic diagram of the electronic device provided in the embodiments of this application. Detailed Implementation

[0027] In the following description, specific details such as particular system architectures and techniques are set forth for illustrative purposes and not for limitation, in order to provide a thorough understanding of the embodiments of this application. However, those skilled in the art will understand that this application may also be implemented in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, apparatuses, circuits, and methods have been omitted so as not to obscure the description of this application with unnecessary detail.

[0028] The following describes in detail, with reference to the accompanying drawings, a method and apparatus for testing the radiation response of a semiconductor device based on natural muon events, according to embodiments of this application.

[0029] As mentioned above, natural cosmic ray events are random and have low flux. It usually takes several hours of long exposure to capture a small number of valid events. It is difficult to accurately measure the impact of cosmic rays on the working stability and accuracy of semiconductor devices using natural cosmic ray events.

[0030] Studies show that low-energy muons can accumulate sufficient charge in semiconductor materials to trigger single-particle flips. The probability of this flip is closely related to factors such as muon energy, semiconductor device size, and materials. Therefore, natural muons can be used as simulation objects for cosmic ray events. By combining muon counters with muon event labeling, the efficiency of semiconductor devices in testing and processing cosmic ray events can be improved. This makes it possible to conduct low-cost studies on the impact of cosmic ray events on the operational stability and accuracy of semiconductor devices, such as their effects on imaging and computation like those of guide systems, in ordinary laboratory environments.

[0031] In view of this, this application provides a method for testing the radiation response of semiconductor devices based on natural muon events. This method involves placing a muon counter above and below the semiconductor device under test, and simultaneously activating two muon counters during the device's operation. The coincidence counts of the two counters record muon events passing through the sensor under test. Output data of the semiconductor device is extracted based on the time and trajectory information marked by the muon events. The impact of muon events in cosmic rays on the semiconductor device under test is analyzed based on the extracted output data. This method enables the detection and analysis of radiation effects on semiconductor devices under non-radiation source conditions, solving the problem of how to efficiently assess the radiation effects and protection capabilities of semiconductor devices in the on-orbit radiation environment.

[0032] like Figure 1 As shown in the embodiments of this application, the semiconductor device radiation response testing method based on natural muon events includes the following steps:

[0033] In step S101, a first muon counter is set above the semiconductor device under test, and a second muon counter is set below the semiconductor device under test.

[0034] In step S102, background radiation is applied so that it passes through the first muon counter, the semiconductor device under test, and the second muon counter.

[0035] In step S103, the first muon counter and the second muon counter are used to perform coincidence counting to detect muon events and determine muon event information.

[0036] The information on the Muon event includes at least the time of the Muon event and the trajectory of the Muon.

[0037] In step S104, the location of the muon event in the semiconductor device under test is determined based on the muon motion trajectory information.

[0038] In step S105, the output data of the semiconductor device under test is determined based on the occurrence time and location of the muon event. The output data is then analyzed and processed to obtain the radiation response of the semiconductor device under test to the muon event.

[0039] In some embodiments of this application, a first muon counter can be disposed above the semiconductor device under test, and a second muon counter can be disposed below the semiconductor device under test. Then, background radiation is applied, allowing the background radiation to pass through the first muon counter, the semiconductor device under test, and the second muon counter.

[0040] In some embodiments of this application, a first muon counter and a second muon counter can be used to perform coincidence counting to detect muon events and determine muon event information.

[0041] The background radiation includes muon rays and other rays. Because muons have excellent penetrating properties, they can be guaranteed to pass through the semiconductor device under test, while most other types of particles are intercepted after being detected by the counter, and their energy cannot be guaranteed to reach the semiconductor device. Therefore, muons are chosen as tracers. Furthermore, two muon counters are set up, and coincidence measurements are used to determine whether the muon rays have penetrated the semiconductor device under test.

[0042] In some embodiments of this application, the location of a muon event in the semiconductor device under test can be determined based on the muon trajectory information in the muon event information, and the output data of the semiconductor device under test can be determined based on the muon event occurrence time and location in the muon event information. The output data is then analyzed and processed to obtain the radiation response of the semiconductor device under test to the muon event.

[0043] According to the technical solution provided in the embodiments of this application, by placing a muon counter above and below the semiconductor device under test, two muon counters are simultaneously turned on during the operation of the semiconductor device under test; the coincidence count of the two muon counters is used to record muon events passing through the sensor under test; the output data of the semiconductor device under test is extracted based on the time and trajectory information marked by the muon events; the impact of muon events in cosmic rays on the semiconductor device under test is analyzed based on the extracted output data, thereby realizing the detection and analysis of the radiation effect of semiconductor devices under non-radiation source conditions, and solving the problem of how to efficiently evaluate the radiation effect and protection capability of semiconductor devices in the on-orbit radiation environment.

[0044] In some embodiments of this application, the effective detection areas of the first muon counter and the second muon counter cover the region of interest of the semiconductor device under test. The region of interest of the semiconductor device under test is the area where radiation response testing is required, such as a weakly protected area or the entrance pupil area that will be exposed to radiation during operation.

[0045] In some embodiments of this application, the first muon counter, the semiconductor device under test, and the second muon counter are all connected to a host computer, and data acquisition clock synchronization is performed based on the local clock of the host computer.

[0046] like Figure 2 As shown in the embodiments of this application, the semiconductor device radiation response testing method based on natural muon events can be executed by this system. The semiconductor device under test can be located within the system under test, which also includes a readout circuit and a signal processing main control circuit. The readout circuit reads the output data of the semiconductor device under test, and the signal processing main control circuit processes the output data and outputs it to a host computer.

[0047] In other words, the semiconductor device under test can be placed between two muon counters, where the effective area of ​​the muon counters must cover the region of interest (ROI) of the sensor under test. Muon rays and other rays are applied to the first muon counter. The muon rays can penetrate the first muon counter, the system under test, and the second muon counter in sequence, while most of the other rays are absorbed by the first muon counter. By using coincidence measurements with the upper and lower muon counters, the timing and trajectory of muon events can be measured, thereby determining the timing and location of the event where a muon passes through the sensor under test.

[0048] Taking the semiconductor device under test as an image sensor as an example, the output data can be the image acquired by the sensor, which is then processed by the signal processing main control circuit and output as image data.

[0049] A first muon counter and a second muon counter are set above and below the system under test, respectively. Background radiation is applied to the first muon counter, the system under test, and the second muon counter. Muon rays can penetrate the first muon counter, the system under test, and the second muon counter, while other rays are absorbed by the first muon counter.

[0050] The first muon counter and the second muon counter output the first muon event count trigger information and the second muon event count trigger information to the host computer, respectively. The host computer then determines whether a muon event has occurred and records the information of the muon event that has occurred.

[0051] In some embodiments of this application, each muon counter includes a first coincidence scintillator branch, a muon scintillator branch and a second coincidence scintillator branch arranged from top to bottom. Each scintillator branch includes a silicon photomultiplier tube (SiPM) for generating pulsed electrical signals when the scintillator generates photon signals.

[0052] Detecting muon events using coincidence counting with a first muon counter and a second muon counter may include: for each muon counter, in response to determining that the SiPM of the first coincidence scintillator branch, the muon scintillator branch, and the second coincidence scintillator branch all generate pulse electrical signals, determining that a muon event may occur; in response to determining that both the first and second muon counters may have muon events, and that the amplitude of the pulse electrical signals generated by the SiPM of the muon scintillator branch in the first and second muon counters is greater than a preset amplitude threshold, determining that a muon event has occurred.

[0053] Furthermore, determining muon event information may include: performing coincidence counting on the pulse electrical signals generated by the SiPM of the muon scintillator branch in the first and second muon counters to determine the time of occurrence of the muon event; determining the muon energy based on the pulse electrical signals generated by the SiPM of the muon scintillator branch in the first and second muon counters; and using the muon energy to invert the muon trajectory information using a muon imaging method.

[0054] like Figure 3 As shown, the muon counter provided in this application embodiment may include three circuit branches, each of which includes a scintillator, a SiPM, and a readout circuit. The coincidence measurement is performed using the three circuit branches, and only when all three readout circuits simultaneously generate a valid count is it considered a muon event.

[0055] In other words, when a muon ray enters the muon counter, the upper and lower scintillators will generate photon signals, triggering the SiPM to generate pulse electrical signals. Only when a muon is incident can the upper and lower muon counters be counted simultaneously. Therefore, by coincidence counting, that is, the upper, middle and lower SiPM pulses are counted simultaneously in one counting cycle, it is regarded as a muon event. At this time, the amplitude of the output pulse of the middle SiPM is recorded, and the energy of the muon and the validity of the event can be estimated.

[0056] In some embodiments of this application, the semiconductor device under test may be an image sensor under test; the output data is an output image.

[0057] At this point, the analysis and processing of the output data may include: determining the image time series based on the occurrence time and location of the muon event; preprocessing the image time series to mask the image time series; wherein, the mask is determined based on the occurrence location of the muon event; identifying pixels in each image of the mask image time series that exceed a preset image threshold as candidate pixels; performing spatial correlation clustering on each candidate pixel to obtain cosmic ray muon events; and analyzing the radiation response of the image sensor under test to the muon event based on the cosmic ray muon event.

[0058] The radiative response includes at least one of the following: radiative response brightness, radiative response morphology, and recovery time.

[0059] Furthermore, determining the image time series based on the occurrence time and location of the muon event may include: determining a target image, wherein the acquisition timestamp of the target image is the same as the occurrence time of the muon event, and the target image contains an image at the location where the muon event occurred; acquiring N images before and after the target image that contain images at the location where the muon event occurred, respectively, to form an image time series; where N is a positive integer.

[0060] In other words, a muon counter can be used as an event trigger to process images within the event range. The event range includes both a time range and a location range.

[0061] Because muon events generate low-signal values, they are easily hidden within noise. Since the effects of muon events only appear in a single frame of the image, and the muon signal may only affect a few pixels, while the image itself contains random noise, the impact of muon events is easily drowned out by the noise. Therefore, it is necessary to obtain consecutive frames simultaneously for multi-frame image processing.

[0062] In some examples, image preprocessing can be performed to create image masks that label muon events, such as inter-frame differencing and clustering algorithms. By establishing connections between pixels that exceed a threshold, clustering them based on their spatial correlation, they can be grouped into individual cosmic ray muon events.

[0063] Extracted high-energy particle images such as Figure 4 As shown, they can be roughly classified into linear and dot-like shapes, which can be used to analyze the response brightness, response morphology, and recovery time of the sensor under test to radiation.

[0064] All of the above-mentioned optional technical solutions can be combined in any way to form the optional embodiments of this application, and will not be described in detail here.

[0065] The following are embodiments of the apparatus described in this application, which can be used to execute the embodiments of the method described in this application. For details not disclosed in the apparatus embodiments of this application, please refer to the embodiments of the method described in this application.

[0066] Figure 5 This is a schematic diagram of a semiconductor device radiation response testing apparatus based on natural muon events, provided in an embodiment of this application. Figure 5 As shown, the device includes:

[0067] Setting module 501 is configured to set a first muon counter above the semiconductor device under test and a second muon counter below the semiconductor device under test.

[0068] Radiation module 502 is configured to apply background radiation, which passes through the first muon counter, the semiconductor device under test, and the second muon counter.

[0069] The detection module 503 is configured to perform coincidence counting using a first muon counter and a second muon counter, and to record muon events; wherein the recorded muon events include at least the time of occurrence of the muon event and information on the muon's motion trajectory.

[0070] The determination module 504 is configured to determine the location of muon events in the semiconductor device under test based on muon motion trajectory information.

[0071] Test module 505 is configured to determine the output data of the semiconductor device under test based on the occurrence time and location of the muon event, analyze and process the output data, and obtain the radiation response of the semiconductor device under test to the muon event.

[0072] According to the technical solution provided in the embodiments of this application, by placing a muon counter above and below the semiconductor device under test, two muon counters are simultaneously turned on during the operation of the semiconductor device under test; the coincidence count of the two muon counters is used to record muon events passing through the sensor under test; the output data of the semiconductor device under test is extracted based on the time and trajectory information marked by the muon events; the impact of muon events in cosmic rays on the semiconductor device under test is analyzed based on the extracted output data, thereby realizing the detection and analysis of the radiation effect of semiconductor devices under non-radiation source conditions, and solving the problem of how to efficiently evaluate the radiation effect and protection capability of semiconductor devices in the on-orbit radiation environment.

[0073] In some implementations, the effective detection regions of the first muon counter and the second muon counter cover the region of interest of the semiconductor device under test; the region of interest of the semiconductor device under test is the region where radiation response testing is required.

[0074] In some implementations, the first muon counter, the semiconductor device under test, and the second muon counter are all connected to a host computer, and data acquisition clock synchronization is performed based on the host computer's local clock.

[0075] In some embodiments, each muon counter includes a first coincidence scintillator branch, a muon scintillator branch, and a second coincidence scintillator branch arranged sequentially from top to bottom. Each scintillator branch includes a silicon photomultiplier tube (SiPM) for generating a pulsed electrical signal when the scintillator generates a photon signal. Muon events are detected by coincidence counting using the first and second muon counters, including: for each muon counter, in response to determining that the SiPMs of the first coincidence scintillator branch, the muon scintillator branch, and the second coincidence scintillator branch all generate pulsed electrical signals, determining that a muon event may occur; and in response to determining that both the first and second muon counters may experience muon events, and that the amplitude of the pulsed electrical signal generated by the SiPM of the muon scintillator branch in the first and second muon counters is greater than a preset amplitude threshold, determining that a muon event has occurred.

[0076] In some implementations, determining muon event information includes: performing coincidence counting on the pulse electrical signals generated by the SiPM of the muon scintillator branch in the first and second muon counters to determine the time of occurrence of the muon event; determining the muon energy based on the pulse electrical signals generated by the SiPM of the muon scintillator branch in the first and second muon counters; and using the muon energy to invert the muon trajectory information using a muon imaging method.

[0077] In some implementations, the semiconductor device under test is an image sensor under test; the output data is an output image; the output data is analyzed and processed, including: determining an image time series based on the occurrence time and location of muon events; preprocessing the image time series to mask the image time series; wherein the mask is determined based on the occurrence location of muon events; identifying pixels in each image of the mask image time series that exceed a preset image threshold as candidate pixels; performing spatial correlation clustering on each candidate pixel to obtain cosmic ray muon events; analyzing the radiation response of the image sensor under test to muon events based on cosmic ray muon events; wherein the radiation response includes at least one of radiation response brightness, radiation response morphology, and recovery time.

[0078] In some implementations, determining the image time series based on the occurrence time and location of the muon event includes: determining a target image, wherein the acquisition timestamp of the target image is the same as the occurrence time of the muon event, and the target image contains an image at the location where the muon event occurred; acquiring N images before and after the target image that contain images at the location where the muon event occurred, respectively, to form an image time series; wherein N is a positive integer.

[0079] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0080] Figure 6 This is a schematic diagram of an electronic device provided in an embodiment of this application. Figure 6 As shown, the electronic device 6 of this embodiment includes a processor 601, a memory 602, and a computer program 603 stored in the memory 602 and executable on the processor 601. When the processor 601 executes the computer program 603, it implements the steps in the various method embodiments described above. Alternatively, when the processor 601 executes the computer program 603, it implements the functions of each module / unit in the various device embodiments described above.

[0081] Electronic device 6 can be a desktop computer, laptop, handheld computer, cloud server, or other electronic device. Electronic device 6 may include, but is not limited to, processor 601 and memory 602. Those skilled in the art will understand that... Figure 6 This is merely an example of electronic device 6 and does not constitute a limitation on electronic device 6. It may include more or fewer components than shown, or different components.

[0082] The processor 601 may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

[0083] The memory 602 can be an internal storage unit of the electronic device 6, such as a hard disk or RAM of the electronic device 6. The memory 602 can also be an external storage device of the electronic device 6, such as a plug-in hard disk, Smart Media Card (SMC), Secure Digital (SD) card, Flash Card, etc., equipped on the electronic device 6. The memory 602 can also include both internal and external storage units of the electronic device 6. The memory 602 is used to store computer programs and other programs and data required by the electronic device.

[0084] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0085] If an integrated module / unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the methods of the above embodiments can also be implemented by a computer program instructing related hardware. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program may include computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. A computer-readable medium may include: any entity or device capable of carrying computer program code, a recording medium, a USB flash drive, a portable hard drive, a magnetic disk, an optical disk, a computer memory, a read-only memory (ROM), a random access memory (RAM), an electrical carrier signal, a telecommunication signal, and a software distribution medium, etc.

[0086] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A method for testing the radiation response of semiconductor devices based on natural muon events, characterized in that, include: A first muon counter is set above the semiconductor device under test, and a second muon counter is set below the semiconductor device under test; Apply background radiation so that it passes through the first muon counter, the semiconductor device under test, and the second muon counter; Muon events are detected by coincidence counting using the first muon counter and the second muon counter, and muon event information is determined; wherein, the muon event information includes at least the time of occurrence of the muon event and muon trajectory information; The location of the muon event in the semiconductor device under test is determined based on the muon motion trajectory information. The output data of the semiconductor device under test is determined based on the occurrence time and location of the muon event. The output data is then analyzed and processed to obtain the radiation response of the semiconductor device under test to the muon event.

2. The method according to claim 1, characterized in that, The effective detection regions of the first muon counter and the second muon counter cover the region of interest of the semiconductor device under test; The region of interest of the semiconductor device under test is the region where radiation response testing is required.

3. The method according to claim 1, characterized in that, The first muon counter, the semiconductor device under test, and the second muon counter are all connected to a host computer, and data acquisition clock synchronization is performed based on the local clock of the host computer.

4. The method according to claim 1, characterized in that, Each muon counter contains a first coincidence scintillator branch, a muon scintillator branch, and a second coincidence scintillator branch arranged from top to bottom. Each scintillator branch contains a silicon photomultiplier tube (SiPM) used to generate a pulsed electrical signal when the scintillator generates a photon signal. Muon events are detected by coincidence counting using the first muon counter and the second muon counter, including: For each muon counter, the SiPM generates a pulsed electrical signal in response to determining the first coincident scintillator branch, the muon scintillator branch, and the second coincident scintillator branch, to determine the possible muon event; In response to determining that a muon event may occur in both the first and second muon counters, and that the amplitude of the pulse electrical signal generated by the SiPM of the muon scintillator branch in the first and second muon counters is greater than a preset amplitude threshold, a muon event is determined to have occurred.

5. The method according to claim 4, characterized in that, Information regarding the Muzi incident has been determined, including: The timing of the muon event is determined by performing coincidence counting on the pulse electrical signals generated by the SiPM of the muon scintillator branch in the first and second muon counters. The muon energy is determined based on the pulse electrical signal generated by the SiPM of the muon scintillator branch in the first and second muon counters, and the muon trajectory information is obtained by inversion using the muon imaging method based on the muon energy.

6. The method according to claim 1, characterized in that, The semiconductor device under test is an image sensor under test; the output data is an output image. The output data is analyzed and processed, including: The image time series is determined based on the occurrence time and location of the muon events. The image time series is preprocessed to mask the image time series; wherein the mask is determined based on the location of the muon event. Pixels in each image of the mask image time series that exceed a preset image threshold are identified as candidate pixels; Spatial correlation clustering is performed on each candidate pixel to obtain cosmic ray muon events; The radiation response of the image sensor under test to the muon event was analyzed based on the cosmic ray muon event. The radiation response includes at least one of radiation response brightness, radiation response morphology, and recovery time.

7. The method according to claim 6, characterized in that, Determining the image time series based on the occurrence time and location of muon events includes: A target image is determined, wherein the acquisition timestamp of the target image is the same as the occurrence time of the muon event, and the target image contains an image of the location where the muon event occurred; N images containing the location where the muon event occurred, taken before and after the target image respectively, are used to form the image time series; Where N is a positive integer.

8. A semiconductor device radiation response testing apparatus based on natural muon events, characterized in that, include: The setup module is configured to set a first muon counter above the semiconductor device under test and a second muon counter below the semiconductor device under test. A radiation module is configured to apply background radiation, such that the background radiation passes through the first muon counter, the semiconductor device under test, and the second muon counter; The detection module is configured to perform coincidence counting using the first muon counter and the second muon counter, and to record muon events; wherein the recorded muon events include at least the time of occurrence of the muon event and information on the muon's motion trajectory. The determination module is configured to determine the location of muon events in the semiconductor device under test based on the muon motion trajectory information; The testing module is configured to determine the output data of the semiconductor device under test based on the occurrence time and location of the muon event, analyze and process the output data, and obtain the radiation response of the semiconductor device under test to the muon event.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the method as described in any one of claims 1 to 7.

10. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method as described in any one of claims 1 to 7.

Images