A dual-band harmonic controlled high efficiency power amplifier

Abstract

This invention discloses a high-efficiency power amplifier with dual-band harmonic control, comprising an input matching network, a dual-band harmonic control gate bias network, a parallel resonant stabilization network, a field-effect transistor, a dual-band harmonic control drain bias network, and an output matching network. The dual-band input and output matching networks are designed to achieve matching between two frequency points. Simultaneously, the dual-band harmonic control bias network controls the harmonics at both frequencies, suppressing the second and third harmonics of the power amplifier. This results in a significant reduction in the power of the second and third harmonics after the RF signal is tuned by the dual-band harmonic control bias network, enhancing the conversion of harmonic power into fundamental power, thereby increasing output power and improving output efficiency. This circuit enables the power amplifier to achieve high efficiency and high power in two frequency bands and can be widely applied to the transmitting modules of wireless communication systems.

Description

Technical Field

[0001] This invention relates to the fields of field-effect transistor power amplifiers and microwave circuits, and in particular to a high-efficiency power amplifier with dual-band harmonic control for use at the end of a transmitting module in a wireless communication system. Background Technology

[0002] As a core component of transceivers, the power amplifier's key performance indicators, such as operating bandwidth, output power, linearity, and harmonic suppression capability, have a decisive impact on the transmission quality and efficiency of communication signals. Furthermore, to meet the needs of multi-band concurrent communication, dual-band power amplifier technology has emerged. This type of power amplifier can achieve efficient operation of two frequency bands on a single amplifier, overcoming the size, energy consumption, and cost problems associated with using multiple independent power amplifiers in traditional solutions. Its core design lies in using a dual-band matching network to achieve impedance transformation at the two frequency points, enabling the power amplifier to maintain high efficiency simultaneously on two widely separated frequency bands. On the other hand, when the power amplifier operates in saturation, it generates abundant harmonic components, causing not only energy loss but also channel interference. Harmonic control technology is crucial for improving the efficiency and linearity of power amplifiers, effectively suppressing second and third harmonics, and maintaining high efficiency while expanding bandwidth.

[0003] Meanwhile, the performance improvement of power amplifiers remains challenging due to limitations imposed by the development pace of semiconductor materials and processes, circuit topologies, and related technologies. Third-generation wide-bandgap semiconductor materials, represented by gallium nitride (GaN), offer an ideal foundation for the design of low-loss, high-power, and wide-bandwidth output matching circuits, thanks to their high electron mobility, high breakdown electric field, and excellent thermal conductivity. Therefore, as circuit structures become increasingly complex, operating frequency bands expand, and bandwidth requirements continue to grow, improving power amplifier performance based on GaN technology combined with dual-band structures and harmonic control techniques has become an important approach. Summary of the Invention

[0004] The technical problem to be solved by this invention is to provide a high-efficiency power amplifier with dual-band harmonic control. This power amplifier is based on a dual-band harmonic control bias network, enabling the power amplifier to achieve high efficiency and high power in both frequency bands.

[0005] The technical solution of the present invention to solve the above-mentioned technical problems is as follows: a high-efficiency power amplifier with dual-band harmonic control, comprising an input matching network, a dual-band harmonic control gate bias network, a parallel resonant stabilization network, a field-effect transistor, a dual-band harmonic control drain bias network, and an output matching network; The input terminal of the input matching network is the input terminal of the entire dual-band harmonic control high-efficiency power amplifier, and its output terminal is connected to the output terminal of the dual-band harmonic control gate bias network and the input terminal of the parallel resonant stabilization network. The input terminal of the dual-band harmonic control gate bias network is the input terminal of the gate voltage of the entire dual-band harmonic control high-efficiency power amplifier, and its output terminal is connected to the input terminal of the parallel resonant stabilization network and the output terminal of the input matching network. The output terminal of the parallel resonant stabilizing network is connected to the gate of the field-effect transistor, and its output terminal is connected to the drain of the field-effect transistor. The drain of the field-effect transistor is connected to the input of the output matching network, and its source is grounded; The input terminal of the dual-band harmonic control drain bias network is the input terminal of the drain voltage of the entire dual-band harmonic control high-efficiency power amplifier, and its output terminal is connected to the drain of the field-effect transistor and the input terminal of the output matching network. The output of the output matching network is the output of the entire dual-band harmonic control high-efficiency power amplifier.

[0006] Compared with existing technologies, the beneficial effects of the technical solution of this invention are as follows: The core of this invention is to improve the output power and efficiency of a power amplifier in two frequency bands based on a dual-band harmonic control bias network. By using a dual-band harmonic control bias network to suppress the second and third harmonics of the power amplifier, the power of the second and third harmonics is significantly reduced after the radio frequency signal is tuned by the harmonic circuit, and more of their power is converted into fundamental frequency power, thereby increasing the output power and improving efficiency. This circuit structure enables the power amplifier to achieve high efficiency and high power in two frequency bands.

[0007] Furthermore, the input of the input matching network is connected to the input RF of the entire dual-band harmonic-controlled high-efficiency power amplifier. in The other end of microstrip line TL1 is connected to capacitor C1. The other end of capacitor C1 is connected to microstrip lines TL2 and TL3. The other end of microstrip line TL3 is connected to microstrip lines TL4 and TL5. The other end of microstrip line TL5 is connected to microstrip line TL6. The other ends of microstrip line TL6 and microstrip line TL9 are connected together to the output of the dual-band harmonic control gate bias network and the input of the parallel resonant network.

[0008] The beneficial effects of the above-mentioned further solutions are: the input matching network designed with a multi-stub microstrip matching structure in this invention can accurately achieve source impedance matching, and can convert the load impedance into the optimal source impedance at the two operating frequency bands respectively.

[0009] Furthermore, the input terminal of the dual-band harmonic control gate bias network is connected to the gate voltage V. gs The capacitors C4 and C5 are connected together. The other end of capacitors C4 and C5 is connected to resistor R2. The other end of resistor R2 is connected to the fan-shaped microstrip line Stub1. The other end of the fan-shaped microstrip line Stub1 is connected to the microstrip line TL. 18 microstrip line TL 18 The other end is connected to the microstrip line TL 19 Microstrip line TL 20 The other end of microstrip line TL7, the other end of microstrip line TL9, and the output of the input matching network are all connected to the input of the parallel resonant network.

[0010] The beneficial effects of the above-mentioned further solutions are: the dual-band harmonic control gate bias network used in this invention can realize the control of the second and third harmonics, enhance the conversion of harmonic power into fundamental power, and also have the functions of tuning and enhancing stability. This structure can improve the output power, efficiency and stability of the power amplifier in two frequency bands.

[0011] Furthermore, the input terminal of the parallel resonant network is connected to microstrip line TL8, and the other end of microstrip line TL8 is connected to capacitor C2 and resistor R1. The other ends of capacitor C2 and resistor R1 are then connected to microstrip line TL8. 10 microstrip line TL 10 The other end is connected to the gate of the field-effect transistor.

[0012] The beneficial effect of the above-mentioned further solution is that the RC parallel resonant circuit structure adopted by the parallel resonant stabilization network of the present invention can effectively enhance the stability of the field-effect transistor, thereby ensuring that the entire power amplifier remains absolutely stable within the operating frequency band.

[0013] Furthermore, the gate of the field-effect transistor is connected to the microstrip line TL. 10 Its drain is connected to the input of the output matching network, and its source is grounded.

[0014] The beneficial effects of the above-mentioned further solutions are: the field-effect transistor of the present invention adopts GaN HEMT technology, has a frequency range of DC-6GHz, and an output power of 10W. It has the characteristics of fast operation, high robustness, high electron mobility, and wide bandgap, and has the characteristics of high frequency, high efficiency and high power.

[0015] Furthermore, the input terminal of the dual-band harmonic control drain bias network is connected to the drain voltage V. ds The capacitors C6, C7, and C8 are connected together. The other end of capacitors C6, C7, and C8 is connected to the fan-shaped microstrip line Stub2. The other end of the fan-shaped microstrip line Stub2 is connected to the microstrip line TL. 21 microstrip line TL 21The other end is connected to the microstrip line TL 22 Microstrip line TL 23 and microstrip lines TL 12 microstrip line TL 12 The other end and microstrip line TL 14 The other end is connected to the input end of the output matching network.

[0016] The beneficial effects of the above-mentioned further solutions are: the dual-band harmonic control drain bias network used in this invention can realize the control of the second and third harmonics, enhance the conversion of harmonic power into fundamental power, and also have the function of tuning. This structure can improve the output power and efficiency of the power amplifier in two frequency bands.

[0017] Furthermore, the input of the output matching network is connected to the microstrip line TL. 11 microstrip line TL 11 The other end is connected to the microstrip line TL 12 Microstrip line TL 13 and microstrip lines TL 14 microstrip line TL 13 The other end is connected to the microstrip line TL 15 microstrip line TL 15 The other end is connected to the microstrip line TL 16 microstrip line TL 16 The other end is connected to capacitor C3, and the other end of capacitor C3 is connected to microstrip line TL. 17 microstrip line TL 17 The other end is connected to the output RF of the entire dual-band harmonic-controlled high-efficiency power amplifier. out .

[0018] The beneficial effects of the above-mentioned further solutions are: the output matching network designed with a step-matching structure in this invention can achieve optimal output impedance matching to load impedance, while reducing the Q value of the matching, effectively improving the gain and output power of the power amplifier in two frequency bands, and significantly improving the bandwidth of the power amplifier. Attached Figure Description

[0019] Figure 1 This is a block diagram illustrating the principle of a high-efficiency power amplifier with dual-band harmonic control according to the present invention. Figure 2 This is a schematic diagram of a high-efficiency power amplifier with dual-band harmonic control according to the present invention. Figure 3 This is a schematic diagram of the dual-band harmonic control gate bias network of the present invention; Figure 4 This is a schematic diagram of the dual-band harmonic control drain bias network of the present invention. Detailed Implementation

[0020] Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be understood that the embodiments shown and described in the drawings are merely exemplary and are intended to illustrate the principles and spirit of the invention, and are not intended to limit the scope of the invention.

[0021] This invention provides a high-efficiency power amplifier with dual-band harmonic control, including an input matching network, a dual-band harmonic control gate bias network, a parallel resonant stabilization network, a field-effect transistor, a dual-band harmonic control drain bias network, and an output matching network. like Figure 1 As shown, the input terminal of the input matching network is the input terminal of the entire dual-band harmonic control high-efficiency power amplifier, and its output terminal is connected to the output terminal of the dual-band harmonic control gate bias network and the input terminal of the parallel resonant stabilization network. The input terminal of the dual-band harmonic control gate bias network is the input terminal of the gate voltage of the entire dual-band harmonic control high-efficiency power amplifier, and its output terminal is connected to the input terminal of the parallel resonant stabilization network and the output terminal of the input matching network. The output terminal of the parallel resonant stabilizing network is connected to the gate of the field-effect transistor, and its output terminal is connected to the drain of the field-effect transistor. The drain of the field-effect transistor is connected to the input of the output matching network, and its source is grounded; The input terminal of the dual-band harmonic control drain bias network is the input terminal of the drain voltage of the entire dual-band harmonic control high-efficiency power amplifier, and its output terminal is connected to the drain of the field-effect transistor and the input terminal of the output matching network. The output of the output matching network is the output of the entire dual-band harmonic control high-efficiency power amplifier.

[0022] like Figure 2 As shown, the input of the input matching network is connected to the input RF of the entire dual-band harmonic-controlled high-efficiency power amplifier. in The other end of microstrip line TL1 is connected to capacitor C1. The other end of capacitor C1 is connected to microstrip lines TL2 and TL3. The other end of microstrip line TL3 is connected to microstrip lines TL4 and TL5. The other end of microstrip line TL5 is connected to microstrip line TL6. The other ends of microstrip line TL6 and microstrip line TL9 are connected together to the output of the dual-band harmonic control gate bias network and the input of the parallel resonant network.

[0023] The input terminal of the dual-band harmonic control gate bias network is connected to the gate voltage V. gsThe capacitors C4 and C5 are connected together. The other end of capacitors C4 and C5 is connected to resistor R2. The other end of resistor R2 is connected to the fan-shaped microstrip line Stub1. The other end of the fan-shaped microstrip line Stub1 is connected to the microstrip line TL. 18 microstrip line TL 18 The other end is connected to the microstrip line TL 19 Microstrip line TL 20 The other end of microstrip line TL7, the other end of microstrip line TL9, and the output of the input matching network are all connected to the input of the parallel resonant network.

[0024] The input terminal of the parallel resonant network is connected to microstrip line TL8. The other end of microstrip line TL8 is connected to capacitor C2 and resistor R1. The other ends of capacitor C2 and resistor R1 are connected to microstrip line TL8. 10 microstrip line TL 10 The other end is connected to the gate of the field-effect transistor.

[0025] The gate of the field-effect transistor is connected to the microstrip line TL. 10 Its drain is connected to the input of the output matching network, and its source is grounded.

[0026] The input terminal of the dual-band harmonic control drain bias network is connected to the drain voltage V. ds The capacitors C6, C7, and C8 are connected together. The other end of capacitors C6, C7, and C8 is connected to the fan-shaped microstrip line Stub2. The other end of the fan-shaped microstrip line Stub2 is connected to the microstrip line TL. 21 microstrip line TL 21 The other end is connected to the microstrip line TL 22 Microstrip line TL 23 and microstrip lines TL 12 microstrip line TL 12 The other end and microstrip line TL 14 The other end is connected to the input end of the output matching network.

[0027] The input of the output matching network is connected to the microstrip line TL. 11 microstrip line TL 11 The other end is connected to the microstrip line TL 12 Microstrip line TL 13 and microstrip lines TL 14 microstrip line TL 13 The other end is connected to the microstrip line TL 15 microstrip line TL 15 The other end is connected to the microstrip line TL 16 microstrip line TL 16 The other end is connected to capacitor C3, and the other end of capacitor C3 is connected to microstrip line TL. 17 microstrip line TL 17The other end is connected to the output RF of the entire dual-band harmonic-controlled high-efficiency power amplifier. out .

[0028] The following is combined Figure 2 The specific working principle and process of this invention are described below: RF input signal through input terminal RF in The signal enters the circuit, passes through the input matching network to the input terminal of the parallel resonant stabilizing network, then is amplified by the field-effect transistor, and under the power supply and harmonic control of the dual-band harmonic control gate bias network and dual-band harmonic control drain bias network, it exits through the output matching network from the output terminal RF. out Output.

[0029] like Figure 3 As shown, this invention uses a dual-band harmonic control gate bias network to suppress the second and third harmonics in two frequency bands of a power amplifier. This significantly reduces the power of the second and third harmonics after the RF signal is tuned by the harmonic control network, allowing more of the harmonic power to be converted into fundamental power, thereby increasing output power and improving efficiency. The suppression of the second and third harmonics is achieved through the second and third harmonic control networks in the dual-band harmonic control gate bias network and the dual-band harmonic control drain bias network. Waveform construction improves the output fundamental power and drain efficiency. Specifically, this involves using a microstrip line TL... 19 Set to a quarter-wavelength line of f1, and set the microstrip line TL 20 Setting microstrip line TL7 to one-eighth of the wavelength of f1 and microstrip line TL8 to one-quarter of the wavelength of f1 enables a second harmonic short circuit at point A. Simultaneously, setting microstrip line TL9 to one-twelfth of the wavelength of f1 enables a third harmonic short circuit at point A, improving the output efficiency of the power amplifier. Furthermore, to achieve an open-circuit condition at the second frequency f2, a fan-shaped microstrip line is first used to short-circuit at point C. Then, by adjusting microstrip line TL9... 18 The electrical length allows for an open-circuit condition at frequency f2 across the entire gate bias network and signal link connection point A, thereby improving the output power and efficiency of the power amplifier across both frequency bands.

[0030] like Figure 4 As shown, this invention suppresses the second and third harmonics in two frequency bands of a power amplifier based on a dual-band harmonic control gate bias network. Specifically, it involves using a microstrip line TL... 22 Set to a quarter-wavelength line of f1, and set the microstrip line TL 23 Set as one-eighth wavelength line of f1, microstrip line TL 12 Setting the line to a quarter wavelength of f1 allows for a second harmonic short circuit of f1 at point D. Simultaneously, the microstrip line TL... 14Setting the line to one-twelfth the wavelength of f1 allows for a third harmonic short circuit at point D, improving the power amplifier's output efficiency. Furthermore, to achieve an open-circuit condition at the second frequency f2, a fan-shaped microstrip line is first used to short-circuit at point F. Then, by adjusting the microstrip line TL... 21 The electrical length can achieve an open-circuit condition at frequency f2 throughout the entire drain bias network and at the signal link connection point D, thereby improving the output power and efficiency of the power amplifier in both frequency bands.

[0031] Furthermore, in the entire dual-band harmonic control high-efficiency power amplifier, the type of field-effect transistor and the size of other resistors and capacitors are determined after comprehensively considering various indicators such as the efficiency, bandwidth and output power of the entire circuit. Through subsequent layout design and reasonable arrangement, the power amplifier achieves high efficiency and high power characteristics in two frequency bands.

[0032] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A high-efficiency power amplifier with dual-band harmonic control, characterized in that, This includes an input matching network, a dual-band harmonic control gate bias network, a parallel resonant stabilization network, a field-effect transistor, a dual-band harmonic control drain bias network, and an output matching network; The input terminal of the input matching network is the input terminal of the entire dual-band harmonic control high-efficiency power amplifier, and its output terminal is connected to the output terminal of the dual-band harmonic control gate bias network and the input terminal of the parallel resonant stabilization network. The input terminal of the dual-band harmonic control gate bias network is the input terminal of the gate voltage of the entire dual-band harmonic control high-efficiency power amplifier, and its output terminal is connected to the input terminal of the parallel resonant stabilization network and the output terminal of the input matching network. The output terminal of the parallel resonant stabilizing network is connected to the gate of the field-effect transistor, and its output terminal is connected to the drain of the field-effect transistor. The drain of the field-effect transistor is connected to the input terminal of the output matching network, and its source is grounded. The input terminal of the dual-band harmonic control drain bias network is the input terminal of the drain voltage of the entire dual-band harmonic control high-efficiency power amplifier, and its output terminal is connected to the drain of the field-effect transistor and the input terminal of the output matching network. The output terminal of the output matching network is the output terminal of the entire dual-band harmonic control high-efficiency power amplifier.

2. The high-efficiency power amplifier with dual-band harmonic control according to claim 1, characterized in that, The input of the input matching network is connected to the input RF of the entire dual-band harmonic-controlled high-efficiency power amplifier. in The other end of microstrip line TL1 is connected to capacitor C1. The other end of capacitor C1 is connected to microstrip lines TL2 and TL3. The other end of microstrip line TL3 is connected to microstrip lines TL4 and TL5. The other end of microstrip line TL5 is connected to microstrip line TL6. The other ends of microstrip line TL6 and microstrip line TL9 are connected together to the output of the dual-band harmonic control gate bias network and the input of the parallel resonant network.

3. The high-efficiency power amplifier with dual-band harmonic control according to claim 1, characterized in that, The input terminal of the dual-band harmonic control gate bias network is connected to the gate voltage V. gs The capacitors C4 and C5 are connected together. The other end of capacitors C4 and C5 is connected to resistor R2. The other end of resistor R2 is connected to the fan-shaped microstrip line Stub1. The other end of the fan-shaped microstrip line Stub1 is connected to the microstrip line TL. 18 microstrip line TL 18 The other end is connected to the microstrip line TL 19 Microstrip line TL 20 The other end of microstrip line TL7, the other end of microstrip line TL9, and the output of the input matching network are all connected to the input of the parallel resonant network.

4. The high-efficiency power amplifier with dual-band harmonic control according to claim 1, characterized in that, The input terminal of the parallel resonant network is connected to microstrip line TL8. The other end of microstrip line TL8 is connected to capacitor C2 and resistor R1. The other ends of capacitor C2 and resistor R1 are connected to microstrip line TL8. 10 microstrip line TL 10 The other end is connected to the gate of the field-effect transistor.

5. A high-efficiency power amplifier with dual-band harmonic control according to claim 1, characterized in that, The gate of the field-effect transistor is connected to the microstrip line TL. 10 Its drain is connected to the input of the output matching network, and its source is grounded.

6. The high-efficiency power amplifier with dual-band harmonic control according to claim 1, characterized in that, The input terminal of the dual-band harmonic control drain bias network is connected to the drain voltage V. ds The capacitors C6, C7, and C8 are connected together. The other end of capacitors C6, C7, and C8 is connected to the fan-shaped microstrip line Stub2. The other end of the fan-shaped microstrip line Stub2 is connected to the microstrip line TL. 21 microstrip line TL 21 The other end is connected to the microstrip line TL 22 Microstrip line TL 23 and microstrip lines TL 12 microstrip line TL 12 The other end and microstrip line TL 14 The other end is connected to the input end of the output matching network.

7. A high-efficiency power amplifier with dual-band harmonic control according to claim 1, characterized in that, The input of the output matching network is connected to the microstrip line TL. 11 microstrip line TL 11 The other end is connected to the microstrip line TL 12 Microstrip line TL 13 and microstrip lines TL 14 microstrip line TL 13 The other end is connected to the microstrip line TL 15 microstrip line TL 15 The other end is connected to the microstrip line TL 16 microstrip line TL 16 The other end is connected to capacitor C3, and the other end of capacitor C3 is connected to microstrip line TL. 17 microstrip line TL 17 The other end is connected to the output RF of the entire dual-band harmonic-controlled high-efficiency power amplifier. out .

Images