Back splatter defect monitoring method, controller, and back splatter defect monitoring apparatus

CN122935221APending Publication Date: 2026-10-16SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD
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Patent Information

Application Number
CN202611217186.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-08-11
Publication Date
2026-10-16

AI Technical Summary

Technical Problem

[0003]然而,该类检测方式多在涂覆工艺结束后实施,反溅缺陷发现存在滞后性,影响工艺监控效率

Benefits of technology

[0058]本申请实施例提供的反溅缺陷监测方法、控制器及反溅缺陷监测装置,通过获取表征晶圆旋转产生的飞溅液滴遮挡状态的液滴传感信号并生成各飞溅液滴对应的坐标分布图信息,结合飞溅液滴的时序图像信息解析各飞溅液滴的液滴运动方向,能够在涂覆工艺过程中识别预设限定区域内远离腔体侧壁移动的液滴并统计其数量,进而在液滴数量达到预设数量阈值时将晶圆送入检测机台确认是否存在液滴飞溅缺陷,以提高反溅缺陷监测的实时性与准确性,并提升工艺监控效率。

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Abstract

Embodiments of the present application provide a back-splashing defect monitoring method, a controller and a back-splashing defect monitoring device. The method comprises obtaining a droplet sensing signal representing a shielding state of a splashing droplet generated by wafer rotation and generating coordinate distribution information corresponding to each splashing droplet, analyzing the droplet movement direction of each splashing droplet in combination with time sequence image information of the splashing droplet, identifying the droplets moving away from the side wall of the cavity in a preset limited area during the coating process and counting the number of the droplets, and then sending the wafer into a detection machine to confirm whether there is a droplet splashing defect when the number of the droplets reaches a preset number threshold, so as to improve the real-time performance and accuracy of back-splashing defect monitoring and improve the process monitoring efficiency.
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