Quantum dot display element structure
By employing a double-layer insulating layer structure with staggered arrangement of auxiliary conductive layers in quantum dot display elements, the problem of uneven circuit impedance was solved, thereby achieving uniformity of quantum dot luminescence brightness and improved driving current.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- UNIMICRON TECH CORP
- Filing Date
- 2025-06-09
- Publication Date
- 2026-05-01
AI Technical Summary
In existing quantum dot display elements, uneven line impedance in the auxiliary conductive layer leads to uneven quantum dot luminescence brightness, and the crowded lines make it difficult to adjust the line width to match the impedance.
A double-layer insulation structure is adopted, with auxiliary conductive layers arranged in the first and second insulation layers respectively. The first and second auxiliary circuits are staggered in wiring to provide more spacious wiring space and adjust the line width to reduce impedance.
This improved the uniformity of quantum dot luminescence brightness, reduced the overall circuit impedance, increased the driving current, and enhanced the luminescence brightness.
Smart Images
Figure CN224192371U_ABST
Abstract
Description
Quantum dot display element structure Technical Field
[0001] This utility model relates to the field of display elements, specifically a display element structure, and more particularly to a quantum dot display element structure. Background Technology
[0002] With the increasing development of solid-state display devices, the light-emitting mechanism and technology of quantum dots (QDs) have been extensively studied and developed. However, in reality, a better technical solution has not yet been found for the technical problem of how to supply good electrical power to enable QDs to emit light properly.
[0003] Referring to Figure 4, a conventional light-emitting element is disposed between a first substrate 101 and a second substrate 102. A first electrode 103 and a second electrode 104 are disposed between the first substrate 101 and the second substrate 102, and a light-emitting structure 105 is disposed between the first electrode 103 and the second electrode 104. The light-emitting structure 105 emits light using QD technology, and the light emission is limited by an insulating layer 106. Specifically, the central portion of the first electrode 103 is attached to the light-emitting structure 105, while the edge portion of the first electrode 103 and the light-emitting structure 105 are separated by the insulating layer 106, and an auxiliary conductive layer L is also disposed between the first electrode 103 and the insulating layer 106. As shown in Figure 4, the lines of the auxiliary conductive layer L are attached to the two opposite edges of the light-emitting structure 105.
[0004] Please refer to Figure 5. A light-emitting plane, as shown in Figure 5, is composed of multiple existing light-emitting elements as described above. In particular, Figure 5 focuses on the structural relationship between the first electrode 103, the auxiliary conductive layer L, and the insulating layer 106. The insulating layer 106 has multiple openings, and each opening exposes the first electrode 103 beneath the insulating layer 106, forming a first opening region A1, a second opening region A2, a third opening region A3, and a fourth opening region A4. The wiring of the auxiliary conductive layer L includes a first line L1, a second line L2, a third line L3, and a fourth line L4. The first line L1 connects to the first electrode 103 below the first opening region A1, the second line L2 connects to the first electrode 103 below the second opening region A2, the third line L3 connects to the first electrode 103 below the third opening region A3, and the fourth line L4 connects to the first electrode 103 below the fourth opening region A4.
[0005] As shown in Figures 4 and 5, since there is only a single insulating layer 106 between the existing first electrode 103 and the light-emitting structure 105, all the lines of the auxiliary conductive layer L in the insulating layer 106, such as the first line L1, the second line L2, the third line L3 and the fourth line L4, need to be arranged on the same plane as shown in Figure 5.
[0006] The problem is that because the lengths of the traces on the same plane in the auxiliary conductive layer L are not uniform, the longer traces will have higher impedance when the trace width is the same. For example, the total trace area on the same plane in the auxiliary conductive layer L is 100 square units, of which the first trace L1 has a trace area of 40 square units, the second trace L2 has a trace area of 30 square units, the third trace L3 has a trace area of 20 square units, and the fourth trace L4 has a trace area of 10 square units. The trace area of the second trace L2 is larger than that of the fourth trace L4, and when the trace width is the same, the length of the second trace L2 is longer than that of the fourth trace L4. Therefore, the impedance of the second trace L2 will be higher than that of the fourth trace L4. This means that when a driving element supplies the second line L2 and the fourth line L4 with the same voltage, the current supplied by the second line L2 and the current supplied by the fourth line L4 will be different. Such uneven current will cause uneven light emission between different QDs, resulting in insufficient light emission of some QDs.
[0007] To avoid inconsistent impedances among the lines in the auxiliary conductive layer L on the same plane, existing technologies have attempted to modify the linewidths of different lines. For example, the linewidth of the second line L2 is made wider than that of the fourth line L4, thereby matching the second line L2 and the fourth line L4 to have the same impedance. However, this solution of widening the linewidth means that the wiring on the same plane is more crowded, making it difficult to place the wider line next to the opening region. Furthermore, taking the second opening region A2 as an example, it is located between the first line L1 and the second line L2. However, when the linewidths of the first line L1 and the second line L2 are different, the QD corresponding to the second opening region A2 will not be uniformly driven to emit light. Summary of the Invention
[0008] In view of the above-mentioned technical problems, the present invention provides a quantum dot display element structure. This quantum dot display element structure improves the hardware architecture for power transmission, thereby improving the electrical properties of the signal supplied to the quantum dot (QD) for light emission. This allows the quantum dot display element structure to reduce impedance, so that the driving element can increase the supply current and increase the brightness of the quantum dot light emission.
[0009] The quantum dot display element structure of this utility model includes:
[0010] A first substrate and a second substrate are disposed opposite to each other;
[0011] A first electrode layer is disposed on the first substrate;
[0012] A first insulating layer is disposed on the first substrate and the first electrode layer, and has a plurality of structural units, wherein each structural unit has a spacing region between it, and each spacing region exposes the first electrode layer.
[0013] A first auxiliary conductive layer is disposed between the first insulating layer and the first electrode layer, and has a first auxiliary circuit; wherein the first auxiliary circuit is connected to the first electrode layer, and the first auxiliary circuit is disposed around a plurality of the structural units;
[0014] A second insulating layer is disposed on the first insulating layer and has at least one second opening, wherein the at least one second opening communicates with each of the interval regions of the first insulating layer;
[0015] A second auxiliary conductive layer is disposed between the first insulating layer and the second insulating layer, and has a second auxiliary circuit; wherein the second auxiliary circuit is disposed around each of the interval regions;
[0016] A quantum dot light-emitting layer is disposed on the second auxiliary conductive layer and covers the first electrode layer exposed in each of the interval regions and each of the second openings;
[0017] A second electrode layer is sandwiched between the second substrate and the quantum dot light-emitting layer.
[0018] The above configuration enables the quantum dot display element structure of this invention to generate luminescent quantum dots in the quantum dot light-emitting layer below each of the interval regions of the first insulating layer connected by at least one of the second openings when driven by a driving element.
[0019] By setting the second insulating layer and the second auxiliary conductive layer on the first insulating layer, the quantum dot display element structure of this invention does not need to rely on wiring in a single insulating layer, but can more flexibly wire the first-layer auxiliary circuit in the first insulating layer and the second-layer auxiliary circuit in the second insulating layer. Therefore, this invention provides ample space between the structural units in the first insulating layer to avoid the need for wiring the first-layer auxiliary circuit, allowing for more space around each structural unit in the first insulating layer to accommodate wider wiring of the first-layer auxiliary circuit. Furthermore, because the second-layer auxiliary circuit in the second insulating layer surrounds multiple spacing areas instead of surrounding multiple first openings as in the first-layer auxiliary circuit, there is also wider wiring space in the second insulating layer for the second-layer auxiliary circuit. Thus, the first-layer auxiliary circuit in the first insulating layer and the second-layer auxiliary circuit in the second insulating layer are staggered vertically, and this invention provides more spacious wiring space for the first-layer auxiliary circuit and the second-layer auxiliary circuit within the two insulating layers.
[0020] Under different linewidth wiring conditions, this invention can provide more space in the first insulating layer for wiring the first-layer auxiliary circuit, and also more space in the second insulating layer for wiring the second-layer auxiliary circuit, to avoid the first-layer and second-layer auxiliary circuits crowding each other on the same plane. Thus, the first-layer and second-layer auxiliary circuits have ample space to adjust the linewidth of the wiring, thereby ensuring that the impedance of each line in the first and second insulating layers is equal. Therefore, when multiple quantum dots in the quantum dot emitting layer are illuminated, the brightness of each quantum dot can be more uniform.
[0021] Under the same linewidth wiring conditions, this invention allows both the first-layer auxiliary circuit and the second-layer auxiliary circuit to have larger linewidths and lower impedance. Simultaneously, in the wiring structure with two insulating layers, because the line length variation in each insulating layer is small, the impedance variation is also small. Small impedance variation means that, under the condition of supplying the same voltage to each line, the current variation in each line is small, thereby making the brightness of the quantum dots driven to emit light in each interval region more uniform.
[0022] Overall, regardless of whether the same or different linewidth wiring conditions are used to configure the first auxiliary circuit in the first insulating layer and the second auxiliary circuit in the second insulating layer, the quantum dot display element structure of this invention allows for a wider wiring width and reduced impedance, thereby enabling the driving element to increase the supply current and thus increase the brightness of the quantum dot emission. Furthermore, the configuration of this invention also ensures that the quantum dots in each of the spaced regions emit light with relatively uniform brightness. Attached Figure Description
[0023] The following figures are intended only to illustrate and explain the present invention and do not limit the scope of the present invention. Wherein:
[0024] Figure 1 is a cross-sectional schematic diagram of the quantum dot display element structure of this utility model in one embodiment.
[0025] Figure 2 is a partial perspective view of the first-layer auxiliary circuit of the quantum dot display element structure of this utility model in another embodiment.
[0026] Figure 3 is a partial perspective view of the second-layer auxiliary circuit of the quantum dot display element structure of this utility model in another embodiment.
[0027] Figure 4 is a cross-sectional schematic diagram of an existing light-emitting element.
[0028] Figure 5 is a schematic diagram of the configuration of multiple existing light-emitting elements.
[0029] Explanation of icon numbers:
[0030] 10: First substrate
[0031] 20: Second substrate
[0032] 30: First electrode layer
[0033] 40: Second electrode layer
[0034] 50: Quantum dot light-emitting layer
[0035] 60: First insulating layer
[0036] 61: First Opening
[0037] 62: Interval area
[0038] 62D: Diameter of the interval region
[0039] 63: The third opening
[0040] 70: Second insulating layer
[0041] 71: Second opening
[0042] 71D: Second opening diameter
[0043] 80: Frame adhesive
[0044] 101: First substrate
[0045] 102: Second substrate
[0046] 103: First electrode
[0047] 104: Second electrode
[0048] 105: Light-emitting structure
[0049] 106: Insulation layer
[0050] A1: First opening area
[0051] A2: Second opening area
[0052] A3: Third opening area
[0053] A4: Fourth opening area
[0054] FL: First auxiliary conductive layer
[0055] FL1, FL2: Line 1
[0056] FL11, FL21: First auxiliary conductive section
[0057] L: Auxiliary conductive layer
[0058] L1: First Line
[0059] L2: Second Line
[0060] L3: Third Line
[0061] L4: Fourth Line
[0062] SL: Second auxiliary conductive layer
[0063] SL1, SL2: Second Line
[0064] SL11, SL12: Second auxiliary conductive sections Detailed Implementation
[0065] Please refer to Figures 1 and 2. This invention provides a quantum dot display element structure. Figure 1 shows a cross-sectional schematic diagram of the quantum dot display element structure in one embodiment, while Figure 2 shows a partial perspective schematic diagram of the quantum dot display element structure in another embodiment.
[0066] Regardless of the embodiment shown in Figure 1 or Figure 2, the quantum dot display element structure of this utility model includes a first substrate 10 and a second substrate 20 disposed opposite to each other, and a quantum dot light-emitting layer 50 disposed between a first electrode layer 30 and a second electrode layer 40 between the first substrate 10 and the second substrate 20, and also includes a first insulating layer 60, a second insulating layer 70, a first auxiliary conductive layer FL and a second auxiliary conductive layer SL between the first substrate 10 and the second substrate 20.
[0067] In detail, the first electrode layer 30 is disposed on the first substrate 10. The first insulating layer 60 is disposed on the first substrate 10 and the first electrode layer 30, and the first insulating layer 60 has a plurality of structural units. For example, in this embodiment, the plurality of structural units are a plurality of first openings 61. Each of the first openings 61 has a spacing region 62, and each of the spacing regions 62 exposes the first electrode layer 30. The first auxiliary conductive layer FL is disposed between the first insulating layer 60 and the first electrode layer 30, and the first auxiliary conductive layer FL has a first auxiliary circuit. The first auxiliary circuit is connected to the first electrode layer 30, and the first auxiliary circuit is disposed around the plurality of first openings 61.
[0068] For example, the first auxiliary circuit of the first auxiliary conductive layer FL may include a plurality of first lines FL1 and first lines FL2 as shown in FIG2, and a plurality of regions are formed within the plurality of first openings 61, such as a first opening region A1 and a third opening region A3. The first lines FL1 are arranged around the first opening region A1, and the first lines FL2 are arranged around the third opening region A3.
[0069] Please refer to Figure 3. The embodiment shown in Figure 3 is the same as that shown in Figure 2, but Figure 3 presents a partial perspective view of the structure not shown in Figure 2. The second insulating layer 70 of this invention is disposed on the first insulating layer 60, and the second insulating layer 70 has at least one second opening 71. The at least one second opening 71 connects to each of the interval regions 62 of the first insulating layer 60. The second auxiliary conductive layer SL is disposed between the first insulating layer 60 and the second insulating layer 70, and the second auxiliary conductive layer SL has a second auxiliary circuit that surrounds each of the interval regions 62.
[0070] For example, the second auxiliary conductive layer SL may include a plurality of second lines SL1 and SL2 as shown in FIG3, and a plurality of regions are formed within the plurality of second openings 71 as shown in FIG3, such as a second opening region A2 and a fourth opening region A4. The second lines SL1 are arranged around the second opening region A2, and the second lines SL2 are arranged around the fourth opening region A4.
[0071] Furthermore, the quantum dot light-emitting layer 50 is disposed on the second auxiliary conductive layer SL, and the quantum dot light-emitting layer 50 covers the first electrode layer 30 exposed in each of the spacing regions 62 and each of the second openings 71. The second electrode layer 40 is sandwiched between the second substrate 20 and the quantum dot light-emitting layer 50.
[0072] The aforementioned quantum dot light-emitting layer 50 is a conventional hardware structure for generating quantum dots (QDs), and is not the focus of this invention; therefore, it will not be described in detail here. What this invention improves is the hardware structure that supplies power to the quantum dot light-emitting layer 50. When this invention operates in conjunction with a driving element, the driving element can provide the quantum dot light-emitting layer 50 with a signal of better electrical properties through the hardware structure defined in this invention, thereby enabling the quantum dot light-emitting layer 50 to generate QDs with better light-emitting characteristics.
[0073] In detail, the driving element connects the first auxiliary circuit and the second auxiliary circuit of this invention to supply power to the quantum dot light-emitting layer 50 to drive the QD to emit light. When the quantum dot display element structure of this invention is driven by the driving element, the quantum dot light-emitting layer 50 below each of the interval regions 62 of the first insulating layer 60 connected by at least one of the second openings 71 will generate light-emitting QDs. By setting the second insulating layer 70 and the second auxiliary conductive layer SL on the first insulating layer 60, compared with the wiring method of existing light-emitting elements, the quantum dot display element structure of this invention does not need to rely on a single insulating layer for wiring, and can more flexibly wire the first auxiliary circuit in the first insulating layer 60 and the second auxiliary circuit in the second insulating layer 70.
[0074] Therefore, in this invention, between each of the first openings 61 in the first insulating layer 60, there is ample space reserved for each of the interval regions 62, eliminating the need for the installation of the first-layer auxiliary circuit. This allows for a larger space around each of the first openings 61 in the first insulating layer 60 to accommodate the wider wiring of the first-layer auxiliary circuit. Furthermore, because the second-layer auxiliary circuit in the second insulating layer 70 is arranged around multiple interval regions 62, rather than around multiple first openings 61 as the first-layer auxiliary circuit is arranged around, the second insulating layer 70 also has a wider wiring space for the second-layer auxiliary circuit. Thus, the first-layer auxiliary circuit in the first insulating layer 60 and the second-layer auxiliary circuit in the second insulating layer 70 are staggered vertically, and this invention provides ample wiring space for the first-layer auxiliary circuit and the second-layer auxiliary circuit in both the first insulating layer 60 and the second insulating layer 70.
[0075] The key technical point of this invention lies in the fact that, regardless of whether the same or different linewidth wiring conditions are used to configure the first auxiliary circuit in the first insulating layer 60 and the second auxiliary circuit in the second insulating layer 70, the quantum dot display element structure of this invention allows for a wider wiring width to reduce impedance, thereby enabling the driving element to increase the supply current and thus increase the brightness of the quantum dot emission. Furthermore, the quantum dot display element of this invention also ensures that the brightness of the driven light-emitting QDs in each of the interval regions 62 is more uniform.
[0076] For example, under different linewidth wiring conditions, this invention can provide more space in the first insulating layer 60 for wiring the first-layer auxiliary circuit, and also provide more space in the second insulating layer 70 for wiring the second-layer auxiliary circuit, to avoid the first-layer and second-layer auxiliary circuits crowding each other on the same plane. In this way, the first-layer and second-layer auxiliary circuits have ample space to adjust the linewidth of the wiring, thereby ensuring that the impedance of each line in the first insulating layer 60 and the second insulating layer 70 is equal. Thus, when the multiple QDs in the quantum dot light-emitting layer 50 are driven to illuminate, the brightness of each QD can be more uniform.
[0077] In detail, under different wiring conditions with varying line widths, this invention can increase the line width by up to three times while maintaining the same overall appearance area. For example, as described in the background section with respect to Figure 5, suppose the total area of the existing auxiliary conductive layer L on the same plane is 100 square units, and the area of a first line L1 is 40 square units, a second line L2 is 30 square units, a third line L3 is 20 square units, and a fourth line L4 is 10 square units. In this invention, where the total wiring area is also 100 square units, the overall wiring area of the first auxiliary circuit in the first insulating layer 60 is 100 square units, and the overall wiring area of the second auxiliary circuit in the second insulating layer 70 overlapping the first insulating layer 60 is also 100 square units. Furthermore, the first-layer auxiliary circuit with a total trace area of 100 square units can be matched with the sum of the first line FL2 with a trace area of 20 square units and the first line FL1 with a trace area of 80 square units. The second-layer auxiliary circuit with a total trace area of 100 square units can be matched with the sum of the second line SL2 with a trace area of 10 square units and the second line SL1 with a trace area of 90 square units. The ratio of the 20 square unit first line FL2 to the 80 square unit first line FL1 is 1:4, and the ratio of the 40 square unit first line L1 to the 80 square unit first line FL1 is 1:2. This indicates that the line width of the first line L1 in Figure 5 and the line width of the first line FL1 in this invention are a multiple of 1:2. Furthermore, the ratio of the second line SL2 (10 square units) to the second line SL1 (90 square units) is 1:9, while the ratio of the second line L2 (30 square units) to the second line SL1 (90 square units) is 1:3. This means that the line width of the second line L2 in Figure 5 and the line width of the second line SL1 in this invention are multiples of 1:3. Therefore, the design of this invention allows for a maximum increase in line width of up to three times under different line width conditions and while maintaining the same overall appearance area.
[0078] Under the same linewidth wiring conditions, this invention allows both the first-layer auxiliary circuit and the second-layer auxiliary circuit to have larger linewidths and lower impedance. Simultaneously, the line length variation between the multiple first lines FL1 and FL2 in the first insulating layer 60 is small, thus the impedance variation is also small; similarly, the line length variation between the multiple second lines SL1 and SL2 in the second insulating layer 70 is small, thus the impedance variation is also small. Small impedance variation means that, under the condition of supplying the multiple first lines FL1 and FL2 and the multiple second lines SL1 and SL2 with the same voltage, the current variation between the multiple first lines FL1 and FL2 and between the multiple second lines SL1 and SL2 is small, thereby allowing for more uniform brightness among the QDs driven to emit light in each of the interval regions 62.
[0079] Furthermore, under the same wiring conditions with the same linewidth, this invention can also reduce the overall area occupied by the lines by increasing the volume. For example, as described in the background section with respect to Figure 5, suppose the total area of the existing auxiliary conductive layer L on the same plane is 100 square units, and the area of a first line L1 is 40 square units, the area of a second line L2 is 30 square units, the area of a third line L3 is 20 square units, and the area of a fourth line L4 is 10 square units. Under the same wiring area, the second line SL2 of this invention can be matched with a wiring area of 10 square units, the first line FL2 can be matched with a wiring area of 20 square units, the second line SL1 can be matched with a wiring area of 30 square units, and the first line FL1 can be matched with a wiring area of 40 square units. Thus, the total trace area of the first auxiliary circuit in the first insulating layer 60 is 60 square units, which is equal to 40 square units of the first line FL1 plus 20 square units of the first line FL2. The total trace area of the second auxiliary circuit in the second insulating layer 70 is 40 square units, which is equal to 30 square units of the second line SL1 plus 10 square units of the second line SL2. After stacking the first insulating layer 60 and the second insulating layer 70, the total trace area occupied by the quantum dot display element structure of this invention is still 60 square units. Thus, compared with the hardware structure of the prior art that occupies 100 square units, the quantum dot display element structure of this invention can save 40% of the total trace area.
[0080] In another embodiment of this invention, the first auxiliary circuit in the first insulating layer 60 is connected to a surface of the first electrode layer 30 that is away from the first substrate 10. Furthermore, each of the spacer regions 62 has opposite sides, such as a left side and a right side. As shown in FIG2, the first line FL1 in the first auxiliary circuit includes a first auxiliary conductive segment FL11 parallel to the left side of the spacer region 62, and the first line FL2 in the first auxiliary circuit includes a first auxiliary conductive segment FL21 parallel to the right side of the spacer region 62. As shown in FIG3, the second line SL1 in the second auxiliary circuit includes a second auxiliary conductive segment SL11 parallel to the left side of the spacer region 62, and the second line SL2 in the second auxiliary circuit includes a second auxiliary conductive segment SL12 parallel to the right side of the spacer region 62.
[0081] Thus, the opposite sides of each of the interval regions 62 are parallel to the plurality of first auxiliary conductive segments FL11, FL21 and the plurality of second auxiliary conductive segments SL11 and SL12 of the first auxiliary circuit, and the plurality of first auxiliary conductive segments FL11 and FL21 of the first auxiliary circuit are aligned with the plurality of second auxiliary conductive segments SL11 and SL12 of the second auxiliary circuit of the second auxiliary conductive layer. Since each of the interval regions 62 corresponds to the position where QD is generated, the plurality of first auxiliary conductive segments FL11, FL21 and the plurality of second auxiliary conductive segments SL11 and SL12 configured as described above can ensure that the hardware for generating QD has a relatively symmetrical auxiliary conductive hardware architecture.
[0082] This application allows for various wiring combinations to accommodate variations in the wire width of multiple first lines FL1 and FL2 and multiple second lines SL1 and SL2. Please refer to the different wiring combinations listed below.
[0083] In one embodiment of this utility model, the plurality of first lines FL1 and FL2 of the first-layer auxiliary circuit have the same linewidth, and the plurality of second lines SL1 and SL2 of the second-layer auxiliary circuit have the same linewidth. Furthermore, the linewidths of the plurality of first lines FL1 and FL2 and the plurality of second lines SL1 and SL2 are all identical.
[0084] In one embodiment of this utility model, the plurality of first lines FL1 and FL2 of the first-layer auxiliary circuit have the same linewidth, and the plurality of second lines SL1 and SL2 of the second-layer auxiliary circuit have the same linewidth. However, the plurality of first lines FL1 and FL2 have a different linewidth than the plurality of second lines SL1 and SL2.
[0085] In one embodiment of this utility model, the plurality of first lines FL1 and FL2 of the first-layer auxiliary circuit have different line widths, and the plurality of second lines SL1 and SL2 of the second-layer auxiliary circuit have different line widths. However, the first line FL1 and the second line SL1 have the same line width, and the first line FL2 and the second line SL2 have the same line width.
[0086] In one embodiment of this utility model, the plurality of first lines FL1 and FL2 of the first-layer auxiliary circuit have different line widths, and the plurality of second lines SL1 and SL2 of the second-layer auxiliary circuit have different line widths. Furthermore, the line widths of the plurality of first lines FL1 and FL2 and the plurality of second lines SL1 and SL2 are all different from each other.
[0087] Additionally, as shown in Figure 1, in one embodiment of this invention, the quantum dot display element structure may further include a frame adhesive 80, which is bonded between the first substrate 10 and the second substrate 20. Preferably, the frame adhesive 80 bonds the edges of the first substrate 10 and the second substrate 20. Furthermore, the first substrate 10 is a light-transmitting substrate, and the first electrode layer 30 is a light-transmitting electrode layer. Thus, this invention ensures that the QD generated by the quantum dot light-emitting layer 50 can pass through the first substrate 10 and the first electrode layer 30 to emit light.
[0088] As shown in Figure 1, in one embodiment of the present invention, each of the interval regions 62 has an interval region diameter 62D, and at least one of the second openings 71 has a second opening diameter 71D. The second opening diameter 71D is greater than or equal to the interval region diameter 62D.
[0089] In one embodiment of this invention, as shown in FIG2, the first insulating layer 60 has multiple first openings 61 that expose the first electrode layer 30. Furthermore, as shown in FIG3, the second insulating layer 70 further has at least one third opening 63, which connects to at least one of the first openings 61 of the first insulating layer 60. The quantum dot light-emitting layer 50 covers the first electrode layer 30 exposed within the at least one third opening 63. This arrangement preserves the light-emitting function of the at least one third opening 63 exposing the first electrode layer 30. For example, the third opening region A3 shown in FIG3, when matched, can also use the first line FL2 in the first insulating layer 60 and a portion of the second lines SL1 and SL2 in the second insulating layer 70 as an auxiliary conductive circuit, driving the quantum dot light-emitting layer 50 within the at least one third opening 63 to generate QD. In other words, without the need to add additional circuits in the first insulating layer 60 and the second insulating layer 70, at least one third opening 63 for generating QD can be added simultaneously using the existing first-layer auxiliary circuit and the second-layer auxiliary circuit, thereby improving the efficiency of QD generation of this invention.
[0090] In one embodiment of the present invention, the first substrate 10 and the second substrate 20 are sandwiched in a multilayer substrate structure, and the multilayer substrate structure can be stacked and integrated to generate QD illumination by multiple quantum dot display element structures, thereby improving the overall brightness of QD illumination.
[0091] In one embodiment of this invention, the plurality of structural units of the aforementioned first insulating layer 60 may also be other types of structures, such as through holes for wiring or planes. Thus, this invention may also retain some of the plurality of structural units for purposes other than generating QD.
[0092] The above are merely illustrative embodiments of this utility model and are not intended to limit the scope of this utility model. Any equivalent changes and modifications made by those skilled in the art without departing from the concept and principles of this utility model should fall within the protection scope of this utility model.
Claims
1. A quantum dot display element structure, characterized in that, The quantum dot display element structure includes: a first substrate and a second substrate disposed opposite to each other; a first electrode layer disposed on the first substrate; a first insulating layer disposed on the first substrate and the first electrode layer, and having a plurality of structural units, wherein each structural unit has a spacing region between it, and each spacing region exposes the first electrode layer; a first auxiliary conductive layer disposed between the first insulating layer and the first electrode layer, and having a first auxiliary circuit; wherein the first auxiliary circuit is connected to the first electrode layer, and the first auxiliary circuit surrounds the plurality of structural units. The unit comprises: a second insulating layer disposed on the first insulating layer and having at least one second opening, the at least one second opening communicating with each of the interval regions of the first insulating layer; a second auxiliary conductive layer disposed between the first insulating layer and the second insulating layer and having a second auxiliary circuit; wherein the second auxiliary circuit surrounds each of the interval regions; a quantum dot light-emitting layer disposed on the second auxiliary conductive layer and covering the first electrode layer exposed in each of the interval regions and each of the second openings; and a second electrode layer sandwiched between the second substrate and the quantum dot light-emitting layer.
2. The quantum dot display element structure as described in claim 1, characterized in that, The first auxiliary circuit layer is connected to a surface of the first electrode layer that is away from the first substrate.
3. The quantum dot display element structure as described in claim 1, characterized in that, Each of the interval regions has two opposite sides that are parallel to the two first auxiliary conductive sections of the first auxiliary circuit, and the plurality of the first auxiliary conductive sections of the first auxiliary circuit are aligned with the second auxiliary circuit of the second auxiliary conductive layer.
4. The quantum dot display element structure as described in claim 1, characterized in that, The first-layer auxiliary circuit includes a plurality of first lines, and the plurality of first lines have the same line width as each other; wherein, the second-layer auxiliary circuit includes a plurality of second lines, and the plurality of second lines have the same line width as each other.
5. The quantum dot display element structure as described in claim 1, characterized in that, The first-layer auxiliary circuit includes a plurality of first lines, and the plurality of first lines have different line widths from each other; wherein, the second-layer auxiliary circuit includes a plurality of second lines, and the plurality of second lines have different line widths from each other.
6. The quantum dot display element structure as described in claim 1, characterized in that, The first-layer auxiliary circuit and the second-layer auxiliary circuit have the same line width.
7. The quantum dot display element structure as described in claim 1, characterized in that, The linewidths of the first-layer auxiliary circuit and the second-layer auxiliary circuit are different.
8. The quantum dot display element structure as described in claim 1, characterized in that, Each of the interval regions has an interval region diameter, and at least one of the second openings has a second opening diameter, wherein the second opening diameter is greater than or equal to the interval region diameter.
9. The quantum dot display element structure as described in claim 1, characterized in that, The quantum dot display element structure also includes a frame adhesive bonded between the first substrate and the second substrate.
10. The quantum dot display element structure as described in claim 1, characterized in that, The first substrate is a light-transmitting substrate, and the first electrode layer is a light-transmitting electrode layer.
11. The quantum dot display element structure as described in claim 1, characterized in that, The multiple structural units are multiple first openings, and the multiple first openings together expose the first electrode layer; wherein, the second insulating layer has at least one third opening, and the at least one third opening communicates with at least one of the first openings of the first insulating layer; wherein, the quantum dot light-emitting layer together covers the first electrode layer exposed within the at least one third opening.
12. The quantum dot display element structure as described in claim 1, characterized in that, The first substrate and the second substrate are sandwiched within a multilayer substrate structure.