SILICON SHIELDING FOR BASE BAND TERMINATION AND RF POWER ENHANCEMENT
Patent Information
- Application Number
- DE602018080225
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2017-12-04
- Filing Date
- 2018-12-03
- Publication Date
- 2025-03-19
- Estimated Expiration
- 2038-12-03
AI Technical Summary
Conventional high-power RF transistor devices face limitations in instantaneous signal bandwidth due to low frequency resonance caused by interactions between bias feeds and baseband decoupling circuit components, leading to restricted RF bandwidth amplifiers with limited applications.
The implementation of a current path structure that circumscribes low-Q material, eliminating power losses by positioning the reverse current path structure between the envelope capacitance and the forward current path, and using low temperature co-fired ceramic structures with RF shielding to enhance performance and reduce eddy currents.
This configuration enables wider RF bandwidth amplifiers with increased low frequency resonance, supporting transmission of signals with ISBW of 200 MHz or above and LFR of 600 MHz or greater, while minimizing power losses and enhancing RF shielding efficiency.