Indication device

Abstract

One of the challenges is to improve the reliability of the light-emitting device. [Solution] A drive circuit section including a drive circuit transistor and a pixel transistor are provided on the same substrate. A light-emitting device having a pixel section including a transistor, and a drive circuit transistor and a pixel transistor. A ZISTA is an inverse staggered transistor that includes an oxide semiconductor layer partially in contact with an oxide insulating layer. Yes. In the pixel section, a color filter layer and a light-emitting element are provided on an oxide insulating layer, and the drive cycle In a circuit transistor, the gate electrode layer and the oxide semiconductor layer overlap on the oxide insulating layer. A conductive layer is provided. The gate electrode layer, source electrode layer, and drain electrode layer are metallic conductive. A membrane is used.

Claims

1. A display device having a pixel section on a substrate having a first transistor and a light-emitting element, and a drive circuit section having a second transistor, A first oxide semiconductor layer having a region in contact with the upper surface of the first insulating layer and having a channel formation region for the first transistor, A second oxide semiconductor layer having a region in contact with the upper surface of the first insulating layer and having a channel formation region for the second transistor, A first conductive layer having a region overlapping with the first oxide semiconductor layer and functioning as the gate electrode of the first transistor, A second conductive layer having a region overlapping with the second oxide semiconductor layer and functioning as the gate electrode of the second transistor, A third conductive layer having a region in contact with the upper surface of the first oxide semiconductor layer and functioning as one of the source electrode and drain electrode of the first transistor, A fourth conductive layer having a region in contact with the upper surface of the second oxide semiconductor layer and functioning as one of the source electrode and drain electrode of the second transistor, A second insulating layer having a region in contact with the upper surface of the third conductive layer and a region in contact with the upper surface of the fourth conductive layer, A third insulating layer having a region located above the second insulating layer, A fifth conductive layer having a region in contact with the upper surface of the third insulating layer and a region in contact with the upper surface of the third conductive layer, and functioning as one electrode of the light-emitting element, A sixth conductive layer having a region in contact with the upper surface of the third insulating layer and a region overlapping with the channel formation region of the second transistor, The fourth insulating layer has a region in contact with the upper surface of the fifth conductive layer and a region in contact with the upper surface of the sixth conductive layer, The first conductive layer and the second conductive layer are made of the same material. The third conductive layer and the fourth conductive layer are made of the same material. The fifth conductive layer and the sixth conductive layer are made of the same material. The fourth insulating layer has a resin, A display device wherein the channel-forming region of the second transistor has a region that does not overlap with the fourth insulating layer.

2. A display device having a pixel section on a substrate having a first transistor and a light-emitting element, and a drive circuit section having a second transistor, A first oxide semiconductor layer having a region in contact with the upper surface of the first insulating layer and having a channel formation region for the first transistor, A second oxide semiconductor layer having a region in contact with the upper surface of the first insulating layer and having a channel formation region for the second transistor, A first conductive layer having a region overlapping with the first oxide semiconductor layer and functioning as the gate electrode of the first transistor, A second conductive layer having a region overlapping with the second oxide semiconductor layer and functioning as the gate electrode of the second transistor, A third conductive layer having a region in contact with the upper surface of the first oxide semiconductor layer and functioning as one of the source electrode and drain electrode of the first transistor, A fourth conductive layer having a region in contact with the upper surface of the second oxide semiconductor layer and functioning as one of the source electrode and drain electrode of the second transistor, A second insulating layer having a region in contact with the upper surface of the third conductive layer and a region in contact with the upper surface of the fourth conductive layer, A third insulating layer having a region located above the second insulating layer, A fifth conductive layer having a region in contact with the upper surface of the third insulating layer and a region in contact with the upper surface of the third conductive layer, and functioning as one electrode of the light-emitting element, A sixth conductive layer having a region in contact with the upper surface of the third insulating layer and a region overlapping with the channel formation region of the second transistor, The fourth insulating layer has a region in contact with the upper surface of the fifth conductive layer and a region in contact with the upper surface of the sixth conductive layer, The first conductive layer and the second conductive layer are made of the same material. The third conductive layer and the fourth conductive layer are made of the same material. The fifth conductive layer and the sixth conductive layer are made of the same material. The fourth insulating layer has a resin, The channel formation region of the first transistor has a region that overlaps with the fourth insulating layer. A display device wherein the channel-forming region of the second transistor has a region that does not overlap with the fourth insulating layer.

3. A display device according to claim 1 or 2, wherein the first transistor is a single-gate transistor.

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