Indication device

Abstract

To provide a display device with high resolution. [Solution] A display device comprising a transistor, a light-emitting diode, a first conductive layer, a second conductive layer, a first insulating layer, and a second insulating layer. The transistor is electrically connected to the first conductive layer, and the first conductive layer and the first insulating layer are located on the transistor, respectively. The second conductive layer is located on the first conductive layer. The second insulating layer is located on the first insulating layer. The light-emitting diode has a first electrode on the second insulating layer, a light-emitting layer on the first electrode, and a second electrode on the light-emitting layer. The second electrode is electrically connected to the second conductive layer. The height of the surface of the first conductive layer facing the second conductive layer is approximately the same as the height of the surface of the first insulating layer facing the second insulating layer. The first insulating layer and the second insulating layer are directly joined. The second conductive layer is located inside an opening in the second insulating layer and is electrically connected to the first conductive layer.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device, a display module, an electronic device, and a method for manufacturing the same. ru.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. For example, semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), and Examples of these driving methods, or methods for manufacturing them, can be given. [Background technology]

[0003] In recent years, micro light-emitting diodes (micro LEDs) have become popular. A display device has been proposed that uses an ode as the display device (also called a display element) (e.g. For example, Patent Document 1). A display device using microLEDs as a display device has high brightness and high power consumption. With advantages such as reliability and long lifespan, it is being actively researched and developed as a next-generation display device. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] U.S. Patent Application Publication No. 2014 / 0367705 [Overview of the project] [Problems that the invention aims to solve]

[0005] Display devices using microLEDs as display devices require time for mounting the LED chip. For a very long time, reducing manufacturing costs has been a challenge. For example, pick-and-place In this method, red (R), green (G), and blue (B) LEDs are fabricated on different wafers. The LEDs are then cut out one by one and mounted onto a circuit board. Therefore, the number of pixels in the display device The more LEDs there are, the more LEDs need to be implemented, and the longer the implementation time will be. The higher the resolution of the design, the more difficult it becomes to implement the LEDs.

[0006] One aspect of the present invention aims to provide a display device with high resolution. One aspect of this invention aims to provide a display device with high resolution. One aspect of this invention is a display device. One objective of the present invention is to provide a display device with high display quality. One aspect of the present invention is to provide a display device with low power consumption. One objective is to provide a low-cost display device. One aspect of the present invention is a highly reliable display device One of the objectives is to provide a suitable location.

[0007] One aspect of the present invention reduces the manufacturing cost of a display device using microLEDs as a display device. One of the objectives is to achieve a high yield in displaying micro-LEDs. One of the challenges is to manufacture the display devices used in these devices.

[0008] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention is It is not necessarily required to resolve all of these issues. Specifications, drawings, invoices. It is possible to extract other issues from the descriptions in the sections. [Means for solving the problem]

[0009] One aspect of the present invention is a transistor, a light-emitting diode, a first conductive layer, a second conductive layer, and a first A display device having an insulating layer and a second insulating layer. The transistor has a first conductive layer and is electrically connected, and the first conductive layer and the first insulating layer are each located on the transistor do. The second conductive layer is located on the first conductive layer. The second insulating layer is on the first insulating layer is located. The light-emitting diode has a first electrode on the second insulating layer, a light-emitting layer on the first electrode , and a second electrode on the light-emitting layer. The second electrode is electrically connected to the second conductive layer The height of the surface of the first conductive layer on the side of the second conductive layer is the same as that of the surface of the first insulating layer on the side of the second insulating layer is approximately the same. The first insulating layer and the second insulating layer are directly joined. The second conductive layer is located inside the opening of the second insulating layer and is electrically connected to the first conductive layer .

[0010] The display device according to one aspect of the present invention preferably further has a third insulating layer and a fourth insulating layer The third insulating layer is preferably located between the transistor and the first insulating layer . The fourth insulating layer is preferably located between the light-emitting diode and the second insulating layer. The first The insulating layer and the second insulating layer preferably each have a silicon oxide film. The first The third insulating layer and the fourth insulating layer preferably each have at least one of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film.

[0011] The display device according to one aspect of the present invention preferably further has a fifth insulating layer. The transistor preferably has a metal oxide layer and a gate electrode. The metal oxide layer preferably has a channel formation region The height of the upper surface of the gate electrode preferably substantially coincides with the height of the upper surface of the fifth insulating layer .

[0012] Alternatively, a transistor consists of a metal oxide layer, a gate insulating layer, a gate electrode, a third conductive layer, and Preferably, the metal oxide layer has a channel-forming region. This is preferable. The metal oxide layer has a first region that overlaps with the third conductive layer and a fourth region that overlaps with the fourth conductive layer. It is preferable to have a second region and a third region between the first and second regions. The third conductive layer and the fourth conductive layer are positioned spaced apart from each other on the metal oxide layer. Preferably, the fifth insulating layer is located on the third conductive layer and the fourth conductive layer. The fifth insulating layer preferably has an opening that overlaps with the third region. The gate insulating layer is It is located inside the opening and overlaps with the side surface of the fifth insulating layer and the upper surface of the third region. Preferably, the gate electrode is located inside the opening and, via the gate insulating layer, is a fifth insulating layer. It is preferable that it overlaps with the side surface of the margin layer and the upper surface of the third region.

[0013] A display device according to one aspect of the present invention preferably further includes a drive circuit. The drive circuit is It is preferable to have a circuit transistor. The circuit transistor is charged to the semiconductor substrate. It is preferable to have a Nel-forming region. Transistor, light-emitting diode, first conductive layer, The second conductive layer, the first insulating layer, and the second insulating layer are each located on the semiconductor substrate. It is preferable to do so.

[0014] Alternatively, the transistor preferably has a channel formation region in the semiconductor substrate. The substrate is preferably a silicon substrate.

[0015] The light-emitting diode is preferably a microlight-emitting diode. D contains compounds that include Group 13 and Group 15 elements (also called Group III-V compounds). It is preferable that the light-emitting diode has gallium nitride.

[0016] A display device according to one aspect of the present invention preferably further comprises a functional layer. The functional layer is light-emitting It is preferable that it be located on the diode. The light emitted by the light-emitting diode is transmitted through the functional layer. Preferably, the functional layer is removed from the outside of the display device. The functional layer consists of a coloring layer and a color conversion layer. It is preferable to have one or both of these.

[0017] One aspect of the present invention comprises a display device having the above configuration, an optical member, a frame, and a housing. The enclosure is an electronic device that has a touch sensor.

[0018] One aspect of the present invention is a display module having a display device having the above configuration. The rake contains a flexible printed circuit board (Flexible Printed Circuit Board). rcuit (hereinafter referred to as FPC) or TCP (Tape Carrier Packet) Connectors such as kage may be attached. Furthermore, the display module may have: COG (Chip On Glass) method or COF (Chip On Film) method Integrated circuits (ICs) may be mounted using methods such as the ) method.

[0019] One aspect of the present invention includes the above-mentioned display module, an antenna, a battery, a housing, a camera, and a speaker. An electronic device having at least one of the following: a microphone, a control button, and a microphone.

[0020] One aspect of the present invention involves forming a plurality of transistors on a first substrate, and On top of each of the multiple transistors, multiple first A conductive layer is formed, a first insulating layer is formed on multiple transistors, and a conductive layer is formed on a second substrate. The following are formed in this order: an electrical film, a first semiconductor film, a light-emitting element, a second semiconductor film, and a second insulating layer. Furthermore, by directly joining the first insulating layer and the second insulating layer, the first substrate and the second substrate are joined together. The two substrates are bonded together, the second substrate is peeled off from the first substrate, and the conductive film, the first semiconductor film, and the light-emitting element are attached. Furthermore, by processing the second semiconductor film, multiple first electrodes, multiple first semiconductor layers, multiple A number of light-emitting layers and a plurality of second semiconductor layers are formed in a matrix, and a second insulating layer is formed. Each of the multiple openings reaches at least one of the multiple first conductive layers, and each of the multiple A plurality of second conductive layers are formed, located inside at least one of the number of apertures, A plurality of second semiconductor layers, and a plurality of second conductive layers Multiple light-emitting diodes are formed by creating multiple second electrodes that are electrically connected. This is a method for manufacturing a display device.

[0021] It is preferable to use at least one planarization process in the process of forming multiple transistors. It seems that at least one of the multiple light-emitting diodes is a microlight-emitting diode. Preferably, at least one of the transistors has a metal oxide in the channel formation region. It is preferable to have at least one of the transistors in the channel formation region. It is preferable to have a recon.

[0022] In a method for manufacturing a display device according to one aspect of the present invention, a color layer, a color conversion layer, and a third substrate are provided. A third substrate is attached to a plurality of light-emitting diodes, forming at least one of the touch sensors. They can be combined.

[0023] Alternatively, in a method for manufacturing a display device according to one aspect of the present invention, at least of a plurality of light-emitting diodes At least one of a coloring layer, a color conversion layer, and a touch sensor may be formed on top of one of them. stomach. [Effects of the Invention]

[0024] According to one aspect of the present invention, a display device with high resolution can be provided. According to one aspect of the present invention, A display device with high image quality can be provided. According to one aspect of the present invention, a display device with high display quality can be provided. It can be provided. According to one aspect of the present invention, a display device with low power consumption can be provided. This allows us to provide highly reliable display devices.

[0025] According to one aspect of the present invention, the manufacturing cost of a display device using microLEDs as a display device is reduced It can be reduced. According to one aspect of the present invention, microLEDs can be used as display devices with a high yield. The display device used can be manufactured.

[0026] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention is It is not necessarily required to have all of these effects. It is possible to extract effects other than those listed above. [Brief explanation of the drawing]

[0027] [Figure 1] Figure 1 is a cross-sectional view showing an example of a display device. [Figure 2] Figure 2 is a cross-sectional view showing an example of a display device. [Figure 3] Figures 3A and 3B are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 4]Figure 4 is a cross-sectional view showing an example of a method for manufacturing a display device. [Figure 5] Figure 5 is a cross-sectional view showing an example of a method for manufacturing a display device. [Figure 6] Figures 6A and 6B are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 7] Figures 7A and 7B are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 8] Figure 8 is a cross-sectional view showing an example of a display device. [Figure 9] Figure 9A is a top view showing an example of a transistor. Figures 9B to 9D are cross-sectional views showing an example of a transistor. [Figure 10] Figure 10 is a circuit diagram showing an example of a pixel. [Figure 11] Figures 11A and 11B show examples of electronic devices. [Figure 12] Figures 12A and 12B show examples of electronic devices. [Figure 13] Figures 13A and 13B show examples of electronic devices. [Figure 14] Figures 14A to 14D show examples of electronic devices. [Figure 15] Figures 15A to 15F show examples of electronic devices. [Modes for carrying out the invention]

[0028] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. It will be easily understood by those skilled in the art to obtain this. Therefore, the present invention is as shown in the embodiments below. The interpretation is not limited to the content stated herein.

[0029] In the configuration of the invention described below, the same part or part having a similar function is used. The same symbol is used consistently across different drawings, and explanations of its repetition are omitted. When referring to a function, the same hatch pattern may be used, and a specific symbol may not be assigned.

[0030] Furthermore, the position, size, and extent of each component shown in the drawings are, for the sake of ease of understanding, actually The location, size, and range may not be described. Therefore, the disclosed invention is not always Furthermore, it is not limited to the location, size, scope, etc., disclosed in the drawings.

[0031] Furthermore, the words "membrane" and "layer" may differ depending on the context or situation. And they can be interchanged. For example, the term "conductive layer" can be replaced with "conductive film." It is possible to change the term to this. Or, for example, the term "insulating film" can be changed to It is possible to change the term to "insulating layer".

[0032] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 1 to 8.

[0033] The display device of this embodiment includes a light-emitting diode which is a display device, and a driver for the display device. It has multiple transistors and multiple LEDs. Multiple light-emitting diodes are arranged in a matrix. It is provided. Each of the multiple transistors controls at least one of the multiple light-emitting diodes. It is electrically connected to one.

[0034] In the method for manufacturing the display device of this embodiment, light-emitting diodes are formed on different substrates. After bonding the multilayer film constituting the code with multiple transistors, the multilayer film is then processed. By processing and isolating the elements (also called isolation), multiple light-emitting diodes are formed. do.

[0035] In the method for manufacturing the display device of this embodiment, before processing the multilayer film that constitutes the light-emitting diode In order to bond the substrate on which the multilayer film is formed and the substrate on which the transistor is formed Therefore, high alignment accuracy is not required when bonding. Even when manufacturing display devices or high-definition display devices, the difficulty of bonding should be kept low. This can improve the manufacturing yield of display devices.

[0036] One method for manufacturing a display device according to one aspect of the present invention involves first placing a plurality of transients on a first substrate. A matrix of transistors is formed, and a first insulating layer and a plurality of first layers are placed on top of the transistors. A conductive layer is formed. Here, the height of the upper surface of the first insulating layer and the height of the upper surface of the first conductive layer are A first insulating layer and a first conductive layer are formed so that the edges match. Each is electrically connected to at least one of multiple transistors. A conductive film, a first semiconductor film, a light-emitting element, a second semiconductor film, and a second insulating layer are arranged on the substrate. Form them in this order.

[0037] Next, the first insulating layer and the second insulating layer are directly joined together, thereby bonding the first substrate and the second substrate. The two are bonded together. It is preferable that the first insulating layer and the second insulating layer be formed from the same material. In particular, it is preferable to use silicon oxide films as the first and second insulating layers. A hydrophilic junction is formed via hydroxyl groups (OH groups) between the first insulating layer and the second insulating layer. The bonding strength can be increased. Conductive film, first semiconductor film, light emitter, and second semiconductor The first substrate and the second substrate are bonded together before the film is processed (before the light-emitting diode elements are separated). Therefore, since high alignment accuracy is not required, the difficulty of bonding can be reduced, and display This can improve the manufacturing yield of the device.

[0038] Next, the second substrate is peeled off from the first substrate. Then, the conductive film, the first semiconductor film, and the light-emitting element are separated. and the second semiconductor film is processed into multiple island-like patterns, A first electrode, multiple first semiconductor layers, multiple light-emitting layers, and multiple second semiconductor layers are combined. It is formed in a rix shape. The first electrode, the first semiconductor layer, the light-emitting layer, and the second semiconductor layer are These are the layers that make up a light-emitting diode.

[0039] Next, multiple openings are formed in the second insulating layer. Each of the multiple openings is a multiple first Reach at least one conductive layer. Next, form a plurality of second conductive layers. Each conductive layer is located inside at least one of the multiple openings. The conductive layer and the second conductive layer are electrically connected to each other.

[0040] Then, multiple second electrodes are formed. The second electrodes consist of a second semiconductor layer and a second conductive It is electrically connected to the electrode, the first semiconductor layer, the light-emitting layer, and the second Multiple light-emitting diodes having a semiconductor layer and a second electrode can be formed. The electrodes are formed so as to be in contact with the upper surface of the second semiconductor layer and the upper surface of the second conductive layer. This is preferable. Furthermore, the second electrode is transient via the first conductive layer and the second conductive layer. It is electrically connected to the transistor. As a result, each of the multiple transistors emits multiple light It is electrically connected to at least one diode.

[0041] In the fabricated display device, the height of the surface of the first conductive layer facing the second conductive layer is the same as the height of the first insulating layer. It roughly coincides with the height of the second insulating layer side of the layer. "Approximately matching" includes cases where A and B are the same, and also includes cases where A and B are the same. This includes cases where a difference exists between A and B due to manufacturing tolerances during production.

[0042] A display device according to one aspect of the present invention preferably further comprises a third insulating layer and a fourth insulating layer. It is preferable that the third insulating layer be located between the transistor and the first insulating layer. The fourth insulating layer is preferably located between the light-emitting diode and the second insulating layer. The third insulating layer and the fourth insulating layer are more resistant to hydrogen and oxygen than the first and second insulating layers. It is preferable to use a film that is difficult for either or both to diffuse. Third insulating layer and fourth insulating layer These are, respectively, aluminum oxide film, hafnium oxide film, and silicon nitride film, with a small amount of each. It is preferable to have at least one. Hydrogen and oxygen or By using films that do not easily diffuse from both sides, the laminated structure on the first substrate side and the laminated structure on the second substrate side are achieved. This can suppress the diffusion of impurities from one side of the structure to the other.

[0043] The display device of this embodiment has the function of displaying images using light-emitting diodes. Since diodes are self-illuminating devices, when light-emitting diodes are used as display devices... Therefore, the display device does not require a backlight, nor does it need to have a polarizing plate. This reduces the power consumption of the display device and allows for a thinner and lighter display device. Yes. Also, display devices that use light-emitting diodes as display devices can increase brightness. This is possible (for example, 5000 cd / m²). 2 Preferably, the above is 10,000 cd / m². 2 (That's all) Furthermore, because it has high contrast and a wide viewing angle, it can achieve high display quality. Furthermore, by using inorganic materials as light-emitting materials, the lifespan of the display device can be extended and its reliability improved. It is possible.

[0044] In this embodiment, we will particularly describe an example in which a microLED is used as the light-emitting diode. Let me explain. In this embodiment, a microLED having a double heterojunction is used. I will explain this. However, there are no particular limitations on light-emitting diodes; for example, those having a quantum well junction. Micro-LEDs, LEDs using nanocolumns, etc., may also be used.

[0045] The area of ​​the region that emits light from the light-emitting diode is 1 mm². 2 The following is preferred: 10,000 μm 2 The following is more preferable: 3000 μm 2 The following is more preferable: 700 μm 2 The following is further Preferred. In this specification, the area of ​​the region that emits light is 10,000 μm². 2 below These light-emitting diodes are sometimes referred to as microLEDs.

[0046] The transistors in the display device preferably have a metal oxide in the channel formation region. Transistors using metal oxides can consume less power. Therefore, By combining it with micro-LEDs, it is possible to realize a display device with extremely low power consumption. It is possible.

[0047] In particular, in the display device of this embodiment, the height of the upper surface of the gate electrode is approximately equal to the height of the upper surface of the insulating layer. It is preferable to have transistors that are nearly identical. For example, CMP (Chemical Applying a planar treatment using methods such as mechanical polishing. Then, the top surface of the gate electrode and the top surface of the insulating layer are flattened, and the height of the top surface of the gate electrode and the top of the insulating layer The surface height can be made uniform.

[0048] Transistors with this configuration can be easily made smaller. By reducing the size of the display device, the size of the pixels can be reduced. It can increase the level of detail.

[0049] Alternatively, the transistors in the display device may have silicon in the channel formation region. This is preferable. It enables high-speed operation of the circuit.

[0050] Furthermore, the display device includes a transistor having silicon in the channel formation region, and channel formation It may have both a transistor having a metal oxide in the region and a pixel rotation. For the path and gate driver, transistors having a metal oxide in the channel formation region are used. A transistor with silicon in the channel formation region may be used as the source driver. Alternatively, for example, a pixel circuit may use a transistor having a metal oxide in its channel formation region. i. Source driver and gate driver have transistors having silicon in the channel formation region. A zista may be used. Alternatively, all of the pixel circuit, gate driver, and source driver may be used. Alternatively, a transistor having silicon in the channel formation region may be used. The path, gate driver, and source driver all have metal oxide in the channel formation region. A transistor can also be used.

[0051] Because the display device of this embodiment can increase resolution, it has a relatively small display unit. It can be suitably used in electronic devices. Such electronic devices include, for example, wristwatches. Examples include bracelet-type information terminals (wearable devices). In addition, Examples of such electronic devices include head-mounted displays and other VR (Virtual Reality) devices. Devices for AR (Augmented Reality), glasses-type AR (Augmented Reality) devices Head-mounted devices such as instruments and MR (Mixed Reality) equipment. Examples include Arabic devices, etc.

[0052] [Example of display device configuration 1] Figure 1 shows a cross-sectional view of the display device 100A. Figure 2 shows a cross-sectional view of the display device 100B. Figures 3 to 7 show cross-sectional views illustrating the manufacturing methods of display devices 100A and 100B. The configuration and manufacturing method of the display devices 100A and 100B will be described below.

[0053] Display devices 100A and 100B have a channel formation region with silicon Transistors 130a and 130b, and transistor 12 having a metal oxide in the channel formation region. It has 0a, 120b and light-emitting diodes 110a, 110b.

[0054] Light-emitting diode 110a consists of an electrode 112a, a semiconductor layer 113a, a light-emitting layer 114a, and a semiconductor. It has layer 115a and electrode 117a. Light-emitting diode 110b has electrode 112b, It has a semiconductor layer 113b, an emissive layer 114b, a semiconductor layer 115b, and an electrode 117c. Each layer of the light-emitting diode may have a single-layer structure or a multilayer structure.

[0055] In display devices 100A and 100B, the subpixels of each color emit light of the same color. It has a light-emitting diode. In this embodiment, each sub-pixel of each color emits blue light. Let's explain using an example that includes a diode.

[0056] In display devices 100A and 100B, the light-emitting diodes of the red subpixels A colored layer CFR and a color conversion layer CCMR are provided in the region overlapping with 110a. Layer CCMR has the function of converting blue light into red light.

[0057] The light emitted by the light-emitting diode 110a is converted from blue to red by the color conversion layer CCMR. The colored layer CFR enhances the purity of the red light, and the display device 100A or display device 1 It is ejected from the outside of 00B.

[0058] Although not shown in the diagram, similarly, in display devices 100A and 100B, green subpixels In the region that overlaps with the light-emitting diode, there is a green colored layer and a color that converts blue light to green. A conversion layer is provided. This causes the light-emitting diodes of the green subpixels to emit light. The light is converted from blue to green by the color conversion layer, and the purity of the green light is enhanced by the coloring layer. The data is then ejected to the outside of the display device 100A or the display device 100B.

[0059] On the other hand, in the display device 100A or the display device 100B, the light-emitting da of the blue subpixel A color conversion layer is not provided in the region overlapping with diode 110b. (Light-emitting diode 11) The blue light emitted by 0b is not color-converted and is displayed on display device 100A or display device 100B. It is ejected to the outside.

[0060] Furthermore, in the display device 100A or the display device 100B, the light-emitting die of the blue pixel A blue colored layer may be provided in the region overlapping with Od 110b. By adding it, the purity of blue light can be increased. Also, if a blue colored layer is not added, The manufacturing process can be simplified.

[0061] In fabricating a display device with light-emitting diodes of the same configuration in subpixels of each color, one type is used on the substrate. Since only one type of light-emitting diode needs to be manufactured, when manufacturing multiple types of light-emitting diodes... In comparison, the manufacturing equipment and processes can be simplified.

[0062] In the display device of this embodiment, red light R and blue light are directed in the direction of the arrows shown in Figures 1 and 2. B is removed. In the display device 100A, the light emitted by the light-emitting diode 110a is Through the color conversion layer CCMR and the coloring layer CFR formed on the light-emitting diode 110a, On the other hand, in the display device 100B, a substrate 19 is placed on the light-emitting diode 110a. 1 is bonded together, and the light emitted by the light-emitting diode 110a is formed on the substrate 191. The color is extracted via the color conversion layer CCMR and the colored layer CFR.

[0063] The method for manufacturing the display device of this embodiment involves first using the LED substrate 150A shown in Figure 3A and The circuit board 150B shown in Figure 3B and the other components are fabricated.

[0064] Figure 3A shows a cross-sectional view of the LED substrate 150A.

[0065] The LED substrate 150A consists of a substrate 101, a semiconductor film 115, a light-emitting element 114, and a semiconductor film 113. It has a conductive film 112, an insulating layer 103, and an insulating layer 104. Semiconductor film 115, light-emitting element 11 4. The semiconductor film 113, the conductive film 112, the insulating layer 103, and the insulating layer 104 are each, It may be a layered structure or a stacked structure. The LED substrate 150A further has layers. It may be present. For example, even if an underlayer or the like is provided between the substrate 101 and the semiconductor film 115. good.

[0066] The conductive film 112, semiconductor film 113, light-emitting element 114, and semiconductor film 115 are processed in a later step. It is a film that is manufactured and constitutes a light-emitting diode. The light-emitting element 114 is made of a semiconductor film 113 and a semiconductor It is sandwiched between the film 115. In the light-emitting element 114, electrons and holes combine to emit light. Of the conductive film 113 and the semiconductor film 115, one is an n-type semiconductor layer and the other is a p-type semiconductor layer. It is a conductive layer.

[0067] The stacked structure including the semiconductor film 113, the light-emitting element 114, and the semiconductor film 115 is red, yellow, These are formed to emit light such as green, blue, and ultraviolet light. Compounds containing Group 13 and Group 15 elements (also called Group III-V compounds) are used. It is possible. Examples of Group 13 elements include aluminum, gallium, and indium. It is possible. Examples of Group 15 elements include nitrogen, phosphorus, arsenic, and antimony. For example, gallium phosphorus compounds, gallium arsenide compounds, gallium aluminum arsenide compounds Aluminum gallium indium phosphate compounds, gallium nitride (GaN), Light-emitting diodes are fabricated using dium-gallium nitride compounds, selenium-zinc compounds, etc. It is possible.

[0068] A compound semiconductor substrate may be used as the substrate 101, for example, a substrate containing Group 13 elements and a Group 1 A compound semiconductor substrate containing a group 5 element may also be used. Furthermore, as substrate 101, for example, Sapphire (Al2O3) substrate, silicon carbide (SiC) substrate, silicon (Si) substrate, Single-crystal substrates such as gallium nitride (GaN) substrates can be used.

[0069] The conductive film 112 is a film that will be processed in a later step to become an electrode for the light-emitting diode. Materials that can be used in 12 include, for example, aluminum, titanium, chromium, nickel Kel, copper, yttrium, zirconium, tin, zinc, silver, platinum, gold, molybdenum, tan Metals such as tungsten, or alloys with these as the main component (silver and palladium) Examples include copper alloys (such as Ag-Pd-Cu(APC)). Also, tin oxide, or Oxides such as zinc oxide may also be used.

[0070] Insulating layers 103 and 104 are silicon oxide, silicon oxide nitride, and silicon nitride oxide. various inorganic insulating materials such as silicon nitride, aluminum oxide, hafnium oxide, and titanium nitride. It can be formed using materials.

[0071] In this specification, silicon oxidnitride is defined as having a composition that contains more oxygen than nitrogen. It has a high content. Also, silicon nitride oxide, in terms of its composition, contains more nitrogen than oxygen. It has a high content of the raw material.

[0072] In particular, the insulating layer 103 may include, for example, an aluminum oxide film, a hafnium oxide film, or a silica nitride film. Using a film such as a silicon oxide film, which is less permeable to the diffusion of hydrogen and / or oxygen than a silicon oxide film. It is preferable that the insulating layer 103 is impurity from the LED substrate 150A to the circuit board 150B. It is preferable that it functions as a barrier layer to prevent the diffusion of substances.

[0073] Furthermore, it is preferable to use an oxide insulating film for the insulating layer 104. The insulating layer 104 is a circuit This layer directly bonds to the insulating layer of substrate 150B. This can increase the bonding strength (adhesion strength).

[0074] Furthermore, the display device of this embodiment may have a light-emitting diode that emits infrared light. Light-emitting diodes that emit infrared light can be used, for example, as a light source for an infrared light sensor. ru.

[0075] Figure 3B shows a cross-sectional view of circuit board 150B.

[0076] Circuit board 150B has a transistor (transistor) having a channel formation region on board 131 Transistors (130a, 130b) and transistors having a channel formation region in a metal oxide (transistors) It has a stack of elements (120a, 120b) and the circuit board 150B. Each layer may be a single-layer structure or a multi-layer structure.

[0077] A single-crystal silicon substrate is preferred as the substrate 131. Transistors 130a, 130 b has a conductive layer 135, an insulating layer 134, an insulating layer 136, and a pair of low-resistance regions 133. The conductive layer 135 functions as a gate. The insulating layer 134 connects the conductive layer 135 to the substrate 131. It is located between them and functions as a gate insulating layer. The insulating layer 136 covers the sides of the conductive layer 135. It is provided and functions as a sidewall. A pair of low-resistance regions 133 are located on the substrate 131 In this region, the impurity-doped area is where one side functions as the source of the transistor. The other end functions as the drain of the transistor.

[0078] Furthermore, an element isolation is provided between two adjacent transistors so as to be embedded in the substrate 131. A layer 132 is provided.

[0079] An insulating layer 139 is provided covering transistors 130a and 130b, and a conductive layer 139 is provided on the insulating layer 139. A conductive layer 138 is provided. Through a conductive layer 137 embedded in the opening of the insulating layer 139 The conductive layer 138 is electrically connected to one of the pair of low-resistance regions 133. An insulating layer 141 is provided covering 138, and a conductive layer 142 is provided on the insulating layer 141. The conductive layer 138 and conductive layer 142 each function as wiring. Also, conductive layer 14 An insulating layer 143 and an insulating layer 152 are provided covering 2, and transistor 1 is placed on the insulating layer 152. Sections 20a and 120b are provided.

[0080] It is provided between transistors 130a and 130b and transistors 120a and 120b. The insulating layer (In Figure 3B, insulating layer 139, insulating layer 141, insulating layer 143, and insulating layer 152) It is preferable to use a layer that functions as a barrier layer in at least one of the layers. Examples of the layer include aluminum oxide films, hafnium oxide films, silicon nitride films, etc. Using a film that is less permeable to the diffusion of hydrogen and / or oxygen than a silicon oxide film. Preferred. In this embodiment, an example is shown in which the insulating layer 152 functions as a barrier layer. Insulating layer 152 is a transistor from transistors 130a and 130b that contains either or both water and hydrogen. To diffuse to transistors 120a and 120b, and from transistors 120a and 120b It functions as a barrier layer to prevent oxygen from escaping to the transistors 130a and 130b. .

[0081] Transistors 120a and 120b consist of a conductive layer 161, an insulating layer 163, an insulating layer 164, and a metal It has an oxide layer 165, a pair of conductive layers 166, an insulating layer 167, a conductive layer 168, etc. Insulating layer 162, insulating layer 181, insulating layer 182, insulating layer 183, and insulating layer 185, one of the insulating layers One or more may be considered components of a transistor, but in this embodiment It will be explained without including it as a component of the transistor. Specific examples of transistors capable of performing this function will be described in detail in Embodiment 2.

[0082] The metal oxide layer 165 has a channel-forming region. The metal oxide layer 165 has a pair of conductive A first region overlapping with one of the layers 166, and a second region overlapping with the other of the pair of conductive layers 166. It has a third region between the first region and the second region.

[0083] A conductive layer 161 and an insulating layer 162 are provided on the insulating layer 152, and the conductive layer 161 and insulating layer 1 Insulating layers 163 and 164 are provided covering 62. The metal oxide layer 165 is It is provided on the insulating layer 164. The conductive layer 161 functions as a gate electrode, and the insulating layer 16 3 and the insulating layer 164 function as a gate insulating layer. The conductive layer 161 is insulating layer 163 and insulating layer 164. It overlaps with the metal oxide layer 165 via the edge layer 164. The insulating layer 163 is similar to the insulating layer 152. Preferably, it functions as a barrier layer. Insulating layer 164 in contact with metal oxide layer 165 It is preferable to use an oxide insulating film such as a silicon oxide film.

[0084] Here, the height of the upper surface of the conductive layer 161 is approximately equal to the height of the upper surface of the insulating layer 162. This allows for a reduction in the size of transistors 120a and 120b.

[0085] In this embodiment, the height of the upper surface of the insulating layer and the height of the upper surface of the conductive layer are approximately the same. At least one of the following configurations is applied. An example of how to manufacture such a configuration is, first, insulation After forming a layer, making an opening in the insulating layer, and forming a conductive layer to fill the opening, C One method is to perform a planarization treatment using the MP method, etc. This reduces the high surface area of ​​the conductive layer. The height of the upper surface of the insulation layer can be made to match.

[0086] A pair of conductive layers 166 are spaced apart on the metal oxide layer 165. 166 functions as source and drain. Metal oxide layer 165 and a pair of conductive layers 1 An insulating layer 181 is provided covering 66, and an insulating layer 182 is provided on top of the insulating layer 181. The insulating layer 181 and insulating layer 182 are provided with openings that reach the metal oxide layer 165. The opening has an insulating layer 167 and a conductive layer 168 embedded inside it. It overlaps with the third region described above. The insulating layer 167 is on the side of the insulating layer 181 and the side of the insulating layer 182. It overlaps with the insulating layer 167. The conductive layer 168 is connected to the side surface of the insulating layer 181 and the insulating layer 18 It overlaps with side 2. The conductive layer 168 functions as a gate electrode, and the insulating layer 167 is gate insulating. It functions as a layer. The conductive layer 168 overlaps with the metal oxide layer 165 via the insulating layer 167.

[0087] Here, the height of the upper surface of the conductive layer 168 is approximately equal to the height of the upper surface of the insulating layer 182. This allows for a reduction in the size of transistors 120a and 120b.

[0088] Then, the insulating layer 183 covers the upper surfaces of the insulating layer 182, the insulating layer 167, and the conductive layer 168. And an insulating layer 185 is provided. Insulating layer 181 and insulating layer 183 are provided with insulating layer 152 and Similarly, it is preferable that it functions as a barrier layer. The insulating layer 181 is used to support a pair of conductive layers 166. By covering it, the oxygen contained in the insulating layer 182 causes the pair of conductive layers 166 to oxidize. It can suppress and.

[0089] A plug that is electrically connected to one of the pair of conductive layers 166 and conductive layer 189a is an insulating layer 1 81, embedded in the openings provided in the insulating layer 182, insulating layer 183, and insulating layer 185 The plug has a conductive layer that is in contact with the side surface of the opening and the upper surface of one of the pair of conductive layers 166. It comprises a conductive layer 184b and a conductive layer 184a embedded inside the conductive layer 184b. Preferably, the conductive layer 184b is a conductive material that does not easily allow hydrogen and oxygen to diffuse. It is preferable to use a special material.

[0090] A conductive layer 189a and an insulating layer 186 are provided on the insulating layer 185, and a conductive layer is provided on the conductive layer 189a. A layer 189b is provided, and an insulating layer 187 is provided on the insulating layer 186. Insulating layer 187 On top of that are an insulating layer 188, a conductive layer 190a, a conductive layer 190b, a conductive layer 190c, and a conductive layer A layer 190d is provided. Preferably, the insulating layer 186 has a planarization function. Therefore, the height of the upper surface of the conductive layer 189b is approximately the same as the height of the upper surface of the insulating layer 187. The edge layer 187 and the insulating layer 186 are provided with openings that reach the conductive layer 189a, and A conductive layer 189b is embedded inside the mouth. Conductive layer 189b is conductive to conductive layer 189a. It functions as a plug to electrically connect to layer 190a or conductive layer 190c. The height of the upper surface of the edge layer 188 is determined by the conductive layer 190a, conductive layer 190b, conductive layer 190c, and This roughly coincides with the height of each upper surface of the conductive layer 190d.

[0091] One of the pair of conductive layers 166 of transistor 120a consists of conductive layer 184a and conductive layer 184b. The conductive layer 190a is electrically connected via conductive layer 189a and conductive layer 189b. ru.

[0092] Similarly, one of the pair of conductive layers 166 of transistor 120b is conductive layer 184a, conductive layer 184b, conductive layer 189a, and conductive layer 189b are electrically connected to conductive layer 190c. It continues.

[0093] The insulating layer 186 consists of silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride, This is formed using inorganic insulating materials such as aluminum oxide, hafnium oxide, and titanium nitride. This is preferable.

[0094] The insulating layer 187 may include, for example, an aluminum oxide film, a hafnium oxide film, or a silicon nitride film. Which film is used that makes it more difficult for hydrogen and / or oxygen to diffuse than a silicon oxide film? This can be done. The insulating layer 187 allows impurities (hydrogen, water) to be transferred from the LED substrate 150A to the transistor. It is preferable that it functions as a barrier layer to prevent the diffusion of (etc.). Also, insulating layer 18 7 is a barrier layer that prevents impurities from diffusing from the circuit board 150B to the LED board 150A. It is preferable that it functions as such.

[0095] The insulating layer 188 is a layer that is directly bonded to the insulating layer 104 of the LED substrate 150A. The edge layer 188 is preferably formed of the same material as the insulating layer 104. It is preferable to use an oxide insulating film. By directly bonding oxide insulating films together, The bonding strength (adhesion strength) can be increased. Note that insulating layer 104 and insulating layer 18 If one or both of the 8 layers have a laminated structure, the layers that are in contact with each other (including the surface layer and the bonding surface) It is preferable that they be formed from the same material.

[0096] Materials that can be used for the various conductive layers of the circuit board 150B include, for example, aluminum. Titanium, titanium, chromium, nickel, copper, yttrium, zirconium, tin, zinc, Metals such as silver, platinum, gold, molybdenum, tantalum, or tungsten, or those primarily composed of these metals. Examples of alloys used as components (such as APC) include tin oxide or zinc oxide. You may use objects.

[0097] The circuit board 150B includes a reflective layer that reflects the light from the light-emitting diode and a light-shielding layer that blocks the light. It may have one or both layers.

[0098] Transistors 120a and 120b are to be used as transistors that constitute the pixel circuit. This is possible. Also, transistors 130a and 130b are transistors that make up the pixel circuit. , or a drive circuit (gate driver and source driver) for driving the pixel circuit. It can be used as a transistor constituting one or both of the following. The 120a, 120b, 130a, and 130b are designed to accommodate various circuits such as arithmetic circuits and memory circuits. It can be used as a transistor.

[0099] This configuration allows for the placement of not only the pixel circuit but also the driving circuit and other components directly beneath the light-emitting diode. Because it can be formed, the display device can be formed in a way that is different from the case where the drive circuit is provided on the outside of the display unit. It can be miniaturized. Furthermore, it enables the realization of a display device with a narrow bezel (a small non-display area). It is possible.

[0100] Next, as shown in Figure 4, the LED board 150A and the circuit board 150B are bonded together. Here, an insulating layer 104 is provided on the LED substrate 150A, and a circuit board 150B is provided The insulating layer 104 and the insulating layer 188 are directly joined. The insulating layer 104 and the insulating layer 188 are made of the same components. It is preferable that it be configured in this way.

[0101] At the joint surface between the LED substrate 150A and the circuit board 150B, layers of the same material are in contact with each other. This allows for a connection with mechanical strength.

[0102] For bonding the insulating layers, high flatness is achieved by polishing, and then hydrophilic properties are developed using oxygen plasma or similar methods. Hydrophilic bonding involves bringing treated surfaces into contact for temporary bonding, followed by dehydration through heat treatment to achieve permanent bonding. Legal methods can be used. Hydrophilic bonding also involves bonding at the atomic level, so machinery A superior bond can be obtained. When using an oxide insulating film, hydrophilic treatment should be performed. Therefore, the bonding strength can be further increased, which is preferable. Furthermore, when using an oxide insulating film, the parent A separate water-based treatment is not required.

[0103] Here, multiple light-emitting diodes are fabricated on the LED substrate beforehand, and multiple transistors are attached to the circuit board. When creating a zista and then bonding the LED board and circuit board together, a high position is required. High precision is required for bonding. The higher the detail and resolution of the display device being manufactured, the higher the bonding precision. This becomes difficult, resulting in a lower manufacturing yield for display devices.

[0104] On the other hand, in the fabrication of the display device of this embodiment, the LED substrate 150A is a light-emitting diode The film that makes up the material has been formed, but no processing such as patterning has been applied. Then, it is bonded to the circuit board 150B. Therefore, high alignment accuracy is not required. The difficulty of bonding can be reduced. This makes it possible to create display devices with high detail and resolution. However, this can improve the production yield.

[0105] Next, the substrate 101 is peeled off (Figures 5 and 6A).

[0106] There are no limitations on the method of peeling off the substrate 101; for example, as shown in Figure 5, a laser beam (Laser One method is to irradiate the entire surface of the substrate 101 with a beam. Layer 01 can be peeled off, exposing the semiconductor film 115 (Figure 6A).

[0107] As for the laser, excimer lasers, solid-state lasers, etc. can be used. For example, die Ode-excited solid-state lasers (DPSS) may also be used.

[0108] Between the substrate 101 and the light-emitting diode (between the substrate 101 and the semiconductor film 115 in Figure 6A) A release layer may be provided.

[0109] The release layer can be formed using organic or inorganic materials.

[0110] Examples of organic materials that can be used in the release layer include polyimide resin and acrylic resin. Epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocycline Examples include lobten resins and phenolic resins.

[0111] Inorganic materials that can be used in the release layer include tungsten, molybdenum, titanium, and Nylon, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, A metal containing an element selected from radium, osmium, iridium, and silicon, the element Examples include alloys containing the element, or compounds containing the element. The crystal structure of the silicon-containing layer is It can be amorphous, microcrystalline, or polycrystalline.

[0112] Next, as shown in Figure 6B, the conductive film 112, semiconductor film 113, light-emitting element 114, and semiconductor The body membrane 115 is processed to form electrodes 112a, 112b, semiconductor layer 113a, and semiconductor layer 113 b, the light-emitting layer 114a, light-emitting layer 114b, semiconductor layer 115a, and semiconductor layer 115b form This is done. Furthermore, an insulating layer 102 is formed on the insulating layer 103. Here, the insulating layer 102 The height of the top surface is preferably approximately equal to the height of the top surfaces of the semiconductor layers 115a and 115b. .

[0113] The insulating layer 102 consists of silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride, This is formed using inorganic insulating materials such as aluminum oxide, hafnium oxide, and titanium nitride. It is preferable that the insulating layer 102 has the function of blocking visible light. Because the margin layer 102 has the function of blocking visible light, the light emitted by the light-emitting diodes is blocked by the adjacent This suppresses the reach of sub-pixels, thereby improving the display quality of the display device.

[0114] Next, as shown in Figure 7A, the insulating layer 102 has conductive layer 190a, conductive layer 190b, conductive layer Openings are provided to reach 190c, electrode 112a, and electrode 112b. Although not shown, the insulating layer 102 also has openings that reach the conductive layer 190d.

[0115] Next, conductive layer 116a, conductive layer 116b, conductive layer 116c A conductive layer 116d and a conductive layer 116e are formed. Although not shown in the figure, a conductive layer 190 The opening that reaches d is also filled with a conductive layer.

[0116] Materials that can be used for conductive layers 116a to 116d include, for example, aluminum. Umium, titanium, chromium, nickel, copper, yttrium, zirconium, tin, zinc, silver, Metals such as platinum, gold, molybdenum, tantalum, or tungsten, or these as the main component. Examples include alloys (such as APC). In addition, oxides such as tin oxide or zinc oxide are used. You may use it.

[0117] Then, on the insulating layer 102, there are electrodes 117a, conductive layer 117b, electrode 117c, and conductive layer It forms 117d.

[0118] As a result, electrode 112a, semiconductor layer 113a, light-emitting layer 114a, semiconductor layer 115a, and Furthermore, an electrode 110a having electrode 117a can be formed. 112b, semiconductor layer 113b, light-emitting layer 114b, semiconductor layer 115b, and electrode 117c A light-emitting diode 110b having the following characteristics can be formed.

[0119] Electrode 117a electrically connects the semiconductor layer 115a and the conductive layer 116a. a is electrically connected to the conductive layer 190a via the conductive layer 116a. Electrode 117a and conductive By electrically connecting the electrode layer 190a, the transistor 120a and the light-emitting diode 11 It can be electrically connected to 0a. Electrode 117a is the image of light-emitting diode 110a. It functions as a primary electrode. Note that electrode 117a is located on the upper surface of semiconductor layer 115a and conductive layer 11 It is preferable that it be formed so as to be in contact with the upper surface of 6a.

[0120] Furthermore, the conductive layer 117b is electrically connected to the electrode 112a via the conductive layer 116b, Furthermore, it is electrically connected to the conductive layer 190b via the conductive layer 116c. Electrode 112a is conductive The conductive layer 190b is electrically connected via the conductive layer 116b, conductive layer 117b, and conductive layer 116c. The process continues. Electrode 112b functions as a common electrode for light-emitting diode 110a.

[0121] Similarly, electrode 117c electrically connects semiconductor layer 115b and conductive layer 116d. Electrode 117c is electrically connected to conductive layer 190c via conductive layer 116d. By electrically connecting 7c and the conductive layer 190c, the transistor 120b and the light-emitting diode Electrode 117c can be electrically connected to light-emitting diode 11 It functions as a pixel electrode for 0b. The electrode 117c is located on the upper surface of the semiconductor layer 115b and the conductive It is preferable that it be formed so as to be in contact with the upper surface of the electrode layer 116d.

[0122] Furthermore, the conductive layer 117d is electrically connected to the electrode 112b via the conductive layer 116e, Furthermore, it is electrically connected to the conductive layer 190d via a conductive layer (not shown). Electrode 112b It is electrically connected to the conductive layer 190d via conductive layer 116e, conductive layer 117d, etc. Electrode 112b functions as a common electrode for light-emitting diode 110b.

[0123] Furthermore, as shown in Figure 7B, an opening is provided in the insulating layer 102 that surrounds the light-emitting diode. A light-shielding layer BM may be embedded in the opening. This allows the light emitted by the light-emitting diode to be directed to adjacent This suppresses the reach of sub-pixels, thereby improving the display quality of the display device. The material of the light-shielding layer BM is not particularly limited; for example, it may be an inorganic material such as a metal, or Use organic materials such as resin materials containing pigments (such as carbon black) or dyes. It is possible.

[0124] Subsequently, the color conversion layer CCMR and the coloring layer CFR are applied to the region overlapping with the light-emitting diode 110a. Furthermore, even if a blue colored layer is formed in the region overlapping with the light-emitting diode 110b, good.

[0125] When forming the display device 100A shown in Figure 1, a color conversion layer is placed on the light-emitting diode 110a. A CCMR is formed, and a colored layer CFR is formed on the color conversion layer CCMR. Light-emitting diode 11 A color conversion layer CCMR may be formed directly on 0a. Also, as shown in Figure 1, the light-emitting die An insulating layer may be formed on the oxide 110a, and a color conversion layer CCMR may be formed on the insulating layer. .

[0126] In Figure 1, an insulating layer 193 is formed on an insulating layer 102, and an electrode 117a, a conductive layer 117b, and an electric This shows an example of forming an insulating layer 194 on an electrode 117c, a conductive layer 117d, and an insulating layer 193. Various insulating materials can be used for the insulating layer 193 and the insulating layer 194, respectively. The insulating layer provided between the light-emitting diode 110a and the color conversion layer CCMR is made of aluminum oxide. Films such as humic acid films, hafnium oxide films, and silicon nitride films have a higher hydrogen and oxygen content than silicon oxide films. It is preferable that one or both of them have at least one layer of a film that is difficult to diffuse. In FIG. 1, an oxide insulating film (such as a silicon oxide film) is used for the edge layer 193, and an example is shown in which a film in which one or both of hydrogen and oxygen are less likely to diffuse than a silicon oxide film is used for the insulating layer 194.

[0127] The formation surface of the color conversion layer CCMR is preferably flat. For example, in FIG. 1, an example is shown in which the upper surfaces of the electrodes 117a, the conductive layer 117b, the electrodes 117c, and the conductive layer 117d and the upper surface of the insulating layer 19 3 are substantially coincident.

[0128] As the color conversion layer, it is preferable to use one or both of a phosphor and a quantum dot (QD: Quantum Dot). In particular, quantum dots have a narrow peak width of the emission spectrum and can obtain light emission with good color purity. Thereby, the display quality of the display device can be improved.

[0129] The color conversion layer can be formed using a droplet discharge method (for example, an inkjet method), a coating method, an imprint method, various printing methods (screen printing, offset printing), etc. Further, a color conversion film such as a quantum dot film may be used.

[0130] The material constituting the quantum dot is not particularly limited. For example, group 14 elements, group 15 elements, group 16 elements, compounds composed of a plurality of group 14 elements, elements belonging to groups 4 to 14 and group 16 elements, compounds of group 2 elements and group 16 elements, compounds of group 13 elements and group 15 elements, compounds of group 13 elements and group 17 elements, compounds of group 14 elements and group 1 5 elements, compounds of group 11 elements and group 17 elements, iron oxides, titanium oxides ​​​​​Examples include chalcogenide spinels and various semiconductor clusters.

[0131] Specifically, cadmium selenide, cadmium sulfide, cadmium telluride, and zinc selenide. Zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, arsenide Indium, indium phosphide, gallium arsenide, gallium phosphide, indium nitride, gallium nitride Indium antimonide, gallium antimonide, aluminum phosphide, aargonide Aluminum, aluminum antimonide, lead selenide, lead telluride, lead sulfide, lead selenide Indium, indium telluride, indium sulfide, gallium selenide, arsenic sulfide, selenium Arsenic ions, arsenic telluride, antimony sulfide, antimony selenide, antimony telluride, sulfur Bismuth bismuth, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium Tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, Aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride Um, calcium sulfide, calcium selenide, calcium telluride, beryllium sulfide, se Beryllium lenide, beryllium telluride, magnesium sulfide, magnesium selenide, sulf Germanium selenium, germanium selenide, germanium telluride, tin sulfide, tin selenide, Tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, oxide Nickel, cobalt oxide, cobalt sulfide, iron oxide, iron sulfide, manganese oxide, molybdenum sulfide Vanadium oxide, tungsten oxide, tantalum oxide, titanium oxide, zirconium oxide Silicon nitride, germanium nitride, aluminum oxide, barium titanate, selenium and zinc Compounds of cadmium, compounds of indium, arsenic, and phosphorus, and compounds of cadmium, selenium, and sulfur Compounds, compounds of cadmium, selenium, and tellurium, compounds of indium, gallium, and arsenic, Compounds of indium, gallium, and selenium; compounds of indium, selenium, and sulfur; copper and indium Examples include compounds of zinc and sulfur, and combinations thereof. Furthermore, any composition is possible. You may also use so-called alloy-type quantum dots, which are expressed as ratios.

[0132] Examples of quantum dot structures include core-type, core-shell-type, and core-multishell-type. Furthermore, because quantum dots have a high proportion of surface atoms, they are highly reactive and do not aggregate. It is prone to hardening. Therefore, a protective agent is attached to the surface of the quantum dot or a protective group is provided. It is preferable that the protective agent is attached or that the protective group is provided. This prevents aggregation and increases solubility in the solvent. Furthermore, it reduces reactivity. Furthermore, it is also possible to improve electrical stability.

[0133] As the size of a quantum dot decreases, the band gap increases, allowing it to reach the desired wavelength. The size is adjusted appropriately so that light is obtained. Because the light emitted by quantum dots shifts towards the blue side, that is, towards the higher energy side, quantum dots By changing the size, the wavelength range of the spectrum in the ultraviolet, visible, and infrared regions can be changed. The emission wavelength can be adjusted across a wide range. The size (diameter) of the quantum dot is For example, 0.5 nm to 20 nm, preferably 1 nm to 10 nm. Quantum The narrower the size distribution of the dots, the narrower the emission spectrum becomes, resulting in better color purity. Light can be obtained. The shape of the quantum dots is not particularly limited, and it may be spherical, rod-shaped, disk-shaped , or other shapes. The quantum rod, which is a rod-shaped quantum dot, has directivity and has the function of presenting light.

[0134] The coloring layer is a colored layer that transmits light in a specific wavelength range. For example, a color filter that transmits light in the wavelength range of red, green, blue, or yellow can be used. Materials that can be used for the coloring layer include metal materials, resin materials, resin materials containing pigments or dyes, etc. can be cited.

[0135] On the other hand, when forming the display device 100B shown in FIG. 2, a substrate 191 provided with a coloring layer CFR and a color conversion layer CCMR is prepared.

[0136] Since the substrate 191 is located on the side where the light from the light-emitting diode is taken out, it is preferable to use a material with high transmittance for visible light. Materials that can be used for the substrate 191 include , for example, glass, quartz, sapphire, resin, etc. A film such as a resin film may be used for the substrate 191. This enables the display device to be made lighter and thinner .

[0137] Then, the substrate 191 is bonded using an adhesive layer 192 so that the coloring layer CFR and the color conversion layer CCMR overlap the light-emitting diode 110a. Thereby, the display device 100B can be manufactured .

[0138] For the adhesive layer 192, various curable adhesives such as photocurable adhesives such as ultraviolet curable types, reaction curable adhesives, thermosetting adhesives, anaerobic adhesives, etc. can be used. Also, an adhesive sheet or the like may be used .​​​​​

[0139] Note that Figure 2 shows an example in which the adhesive layer 192 is in contact with the insulating layer 102 and the electrode 117a, etc. , an insulating layer (for example, the insulating layer shown in Figure 1) is placed on either or both of the insulating layer 102 and the electrode 117a. (Either or both of the edge layer 193 and the insulating layer 194) are provided, and the insulating layer and the adhesive layer 192 are in contact It's okay to do so.

[0140] In the display device of this embodiment, multiple light-emitting diodes are connected to a single transistor. They may be electrically connected.

[0141] Furthermore, for each color exhibited by the subpixel, the size of the transistor driving the light-emitting diode, and the chat At least one of the channel length, channel width, and structure may differ from each other. In terms of the amount of current required to emit light at the desired brightness, the transistors for each color The channel length and / or channel width may be changed.

[0142] Furthermore, a display device according to one aspect of the present invention is a display device equipped with a touch sensor (input / output device) It may also be called a touch panel.

[0143] A touch panel according to one aspect of the present invention has a detection device (sensor device, detection element, sensor) There are no limitations on the type of element (also called a stylus element). It detects the proximity or contact of an object to be detected, such as a finger or stylus. Various sensors capable of detecting information can be applied as detection devices.

[0144] Examples of sensor types include capacitive, resistive, surface acoustic wave, and infrared sensors. Various methods can be used, such as optical, pressure-sensitive, and other similar methods.

[0145] Capacitive capacitance methods include surface capacitance and projected capacitance. Capacitive capacitance methods include self-capacitance methods and mutual capacitance methods. This is preferable because it enables simultaneous multi-point detection.

[0146] A touch panel according to one aspect of the present invention is formed by bonding together a separately manufactured display device and a detection device. A configuration in which a detection device is attached to one or both of the substrate supporting the display device and the opposing substrate. Various configurations can be applied, such as a configuration that includes electrodes and the like.

[0147] [Example of display device configuration 2] The display device 100C shown in Figure 8 is mainly characterized by the fact that it does not have transistors 120a and 120b. This differs from the display device 100A shown in Figure 1.

[0148] In the display device 100C, a transistor having a channel formation region is placed on the substrate 131. A pixel circuit is formed using sta) 130a and 130b). Furthermore, a channel is formed on substrate 131. A drive circuit (G) for driving the pixel circuit using a transistor having a pixel formation region. Various circuits (either the source driver or source driver), arithmetic circuits, memory circuits, etc. It may form.

[0149] Display device 100C is the same as display device 100A, except for the configuration of the circuit board that is manufactured. It can be manufactured using the following method. The configuration of the circuit board is described below.

[0150] In the display device 100C, the configuration from the substrate 131 to the conductive layer 138 is a circuit board 150 The configuration is the same as that of B (Figure 3B). Furthermore, an insulating layer 186 is provided on the conductive layer 138. A conductive layer 189 is provided on the conductive layer 138, and an insulating layer 187 is provided on the insulating layer 186. There are insulating layers 187, insulating layer 188, conductive layer 190a, conductive layer 190b, and conductive layer 1 A 90c layer and a conductive layer 190d are provided. The insulating layer 186 has a planarization function. This is preferable. Here, the height of the upper surface of the conductive layer 189 is approximately equal to the height of the upper surface of the insulating layer 187. They match. The insulating layer 187 and insulating layer 186 are provided with openings that reach the conductive layer 138. The conductive layer 189 is embedded inside the opening. It functions as a plug that electrically connects 8 to conductive layer 190a or conductive layer 190c. Furthermore, the height of the upper surface of the insulating layer 188 is determined by the conductive layer 190a, conductive layer 190b, and conductive layer 190c. This is roughly consistent with the height of the upper surface of the conductive layer 190d.

[0151] As described above, the display device of this embodiment processes the laminated film that constitutes the light-emitting diode. Previously, the substrate on which the multilayer film was formed and the substrate on which the transistor was formed were bonded together. Therefore, high alignment accuracy is not required when bonding. Even when manufacturing display devices or high-definition display devices, the difficulty of bonding is reduced. This allows for an increase in the manufacturing yield of display devices.

[0152] The display device of this embodiment includes a first insulating layer on a plurality of transistors and a light-emitting diode. A second insulating layer on the constituent laminated film, and a film of the same material (preferably an oxide insulating film, etc.) Preferably, a silicon oxide film is used. The first insulating layer and the second insulating layer are directly joined together. This increases the joint strength. Furthermore, multiple transistors and the first insulating layer Between the two, a third insulating layer is provided, and the laminated film constituting the light-emitting diode and the second insulating layer A fourth insulating layer is provided between them. The third insulating layer and the fourth insulating layer are the first insulating layer A film is used that is less permeable to the diffusion of hydrogen and / or oxygen than the first and second insulating layers. Specifically, the third and fourth insulating layers are aluminum oxide film and hafny oxide film. It is preferable to use at least one of a film and a silicon nitride film, and the silicon nitride film It is particularly preferable to use this. This allows the transistor and light-emitting diode to enter Impurities can be effectively suppressed.

[0153] Furthermore, the display device of this embodiment can reduce the size of the transistors, thus increasing the resolution. It is easy to improve performance and apply to electronic devices with relatively small display units.

[0154] This embodiment can be appropriately combined with other embodiments. Furthermore, this specification Furthermore, if multiple configuration examples are shown within a single embodiment, the configuration examples may be combined as appropriate. It is possible to do so.

[0155] (Embodiment 2) In this embodiment, regarding the transistor that can be used in a display device according to one aspect of the present invention, I will explain.

[0156] The structure of the transistors in the display device is not particularly limited. For example, planar transistors It can be a staggered transistor, or an inverse staggered transistor. It may also be a stator. Also, either a top gate structure or a bottom gate structure transition A sta structure may be used. Alternatively, gate electrodes may be provided above and below the channel.

[0157] The transistors in the display device include, for example, those that use a metal oxide in the channel formation region. A transistor can be used. This allows for the use of a transistor with extremely low off-current. It can be achieved.

[0158] A transistor having silicon in its channel formation region is suitable for a display device. It may be used. For example, a transistor having amorphous silicon. A transistor, which has crystalline silicon (typically low-temperature polysilicon), Examples include transistors having single-crystal silicon. For example, a metal oxide channel... A transistor using silicon in the formation region and a transistor having silicon in the channel formation region They may also be used in combination.

[0159] In this specification, the term "transistor" includes a gate, a drain, and a source. It is an element having at least three terminals. And, drain (drain terminal, drain (Region, or drain electrode) and source (source terminal, source region, or source electrode) It has a region in between where a channel is formed (hereinafter also called the channel-forming region), This device allows current to flow between the source and drain through a channel-forming region. In this specification, the channel-forming region refers to the region through which electric current primarily flows. .

[0160] Furthermore, the source and drain functions may differ when using transistors with different polarities, or However, this can change when the direction of current changes during circuit operation. In this specification, the terms source and drain may be used interchangeably. There is a match.

[0161] Note that channel length refers to, for example, the length of the semiconductor (or transistor) in a top view of a transistor. When the zista is in the ON state, the part of the semiconductor through which current flows and the gate electrode overlap each other. In the region, or channel-forming region, the source (source region or source electrode) and the channel This refers to the distance between the drain region (or drain electrode) and the transition. In a st, the channel length is not necessarily the same across all regions. That is, one The channel length of a transistor may not be fixed to a single value. Therefore, in this specification... The channel length is any one value, maximum value, minimum value or Use the average value.

[0162] Channel width refers to, for example, the channel width of a semiconductor (or transistor) in a top view of a transistor. The region where the part of the semiconductor through which current flows when the gate electrode is ON and the gate electrode overlap each other. , or the channel shape in the channel formation region, perpendicular to the channel length direction. This refers to the length of the region. Note that in a single transistor, the channel width is the same across all regions. They don't necessarily take the same value. That is, the channel width of a single transistor is not a single value. It may not be fixed. Therefore, in this specification, the channel width is defined as the channel formation region. It is one of the following values: maximum, minimum, or average.

[0163] In this specification, depending on the transistor structure, channel formation may actually occur. The channel width in the region (hereinafter also referred to as "effective channel width") and the transient The channel width shown in the top view of the device (hereinafter also referred to as the "apparent channel width"). And, there are cases where they differ. For example, when the gate electrode covers the side of the semiconductor, the effective chat There are cases where the channel width becomes larger than the apparent channel width, and its effect cannot be ignored. Yes, for example, in a transistor that is very small and whose gate electrode covers the side of the semiconductor, the side of the semiconductor In some cases, the proportion of channel-forming regions formed on the surface may be large. In such cases, the apparent appearance The effective channel width is larger than the specified channel width.

[0164] In such cases, it can be difficult to estimate the effective channel width through actual measurements. For example, in order to estimate the effective channel width from the design value, the shape of the semiconductor is known. An assumption is necessary. Therefore, if the shape of the semiconductor is not precisely known, the effective method is It is difficult to accurately measure channel width.

[0165] In this specification, when simply referred to as "channel width," it may refer to the apparent channel width. Yes. Or, in this specification, when simply referred to as channel width, it means effective channel width. This may refer to channel length, channel width, effective channel width, and apparent channel width. Channel width, etc., are measured using TEM (Transmission Electron Microscope). The value can be determined by analyzing images such as those from an microscope.

[0166] The following methods for depositing insulators, conductors, oxides, and semiconductors include sputtering and chemical vapor deposition. Phase growth (CVD: Chemical Vapor Deposition), molecular beam e Pitaxy (MBE: Molecular Beam Epitaxy), Pulse Ray Pulsed Laser Deposition (PLD), atomic layer deposition ( This can be done using methods such as ALD (Atomic Layer Deposition). Yes, it is possible. Also, in this specification, the term "insulator" may be interpreted as "insulating film" or "insulating layer." It can be replaced. Also, the term "conductor" can be replaced with "conductive film" or "conductive layer." It is possible to replace the term "oxide" with "oxide film" or "oxide layer." It is possible to also replace the term "semiconductor" with "semiconductor film" or "semiconductor layer." It is possible.

[0167] Figure 9A shows a top view of transistor 200. Note that in Figure 9A, for clarity, one The illustration of the elements of the section is omitted. Figure 9B shows a cross-sectional view between the dashed line A1-A2 in Figure 9A. Figure 9B can be described as a cross-sectional view of transistor 200 in the channel length direction. Figure 9C shows... Figure 9C shows a cross-sectional view of the section between A3 and A4 in 9A. This can be described as a cross-sectional view in the channel width direction. Figure 9D shows the cross-section between the dashed line A5 and A6 in Figure 9A. The diagram is shown.

[0168] The semiconductor device shown in Figures 9A to 9D consists of an insulator 212 on a substrate (not shown) and an insulator 21 2 on the insulator 214, the transistor 200 on the insulator 214, and on the transistor 200 The insulator 280, the insulator 282 on the insulator 280, and the insulator 283 on the insulator 282 It has an insulator 285 on an insulator 283, and an insulator 212, an insulator 214, an insulator 2 80, insulator 282, insulator 283, and insulator 285 function as interlayer insulating films. Furthermore, the conductor 240 (conductor) is electrically connected to the transistor 200 and functions as a plug. It has 240a and conductor 240b). Note that the side of conductor 240 which functions as a plug An insulator 241 (insulators 241a and 241b) is provided in contact with the surface. On the edge 285 and on the conductor 240, there are electrically connected components that function as wiring. Conductors 246 (conductors 246a and conductors 246b) are provided.

[0169] The insulating elements 280, 282, 283, and 285 are in contact with the inner walls of the openings. An edge member 241a is provided, and the first conductor of the conductor 240a is in contact with the side surface of the insulator 241a. A second conductive material, the conductive material 240a, is provided further inside. An insulator 241b is provided in contact with the inner wall of the opening of the body 280, the insulator 282, and the insulator 283. Furthermore, a first conductor of the conductor 240b is provided in contact with the side surface of the insulator 241b, and A second conductor of conductor 240b is provided on the inside. Here, the upper surface of conductor 240 The height and the height of the upper surface of the insulator 285 in the region overlapping with the conductor 246 can be made to be approximately the same. Furthermore, in transistor 200, the conductor 240 consists of a first conductor and a second conductor. Although the present invention describes a stacked configuration, it is not limited thereto. For example, The electric body 240 may be provided as a single layer or as a laminated structure of three or more layers. In cases where a layered structure is present, ordinal numbers may be assigned to distinguish the layers based on their formation order.

[0170] [Transistor 200] As shown in Figures 9A to 9D, the transistor 200 is located on the insulator 216 on the insulator 214. And a conductor 205 (conductor 205a, conductive) is arranged to be embedded in the insulator 216. Body 205b and conductor 205c), and insulator 2 on insulator 216 and conductor 205 22, an insulator 224 on the insulator 222, an oxide 230a on the insulator 224, and an oxide Oxide 230b on 230a and oxide 243(oxide 243a and Oxide 243b), conductor 242a on oxide 243a, and insulator on conductor 242a 271a, conductor 242b on oxide 243b, and insulator 271b on conductor 242b And, an insulator 250 (insulator 250a and insulator 250b) on oxide 230b, and an insulator Located above 250, the conductor 260 (conductor 260a and conductor) overlaps with a portion of the oxide 230b. Electrode 260b), insulator 222, insulator 224, oxide 230a, oxide 230b, acid Compound 243a, oxide 243b, conductor 242a, conductor 242b, insulator 271a, and The device comprises an insulator 275 that covers the insulator 271b.

[0171] In the following, oxides 230a and 230b will be collectively referred to as oxide 230. There are cases where conductors 242a and conductors 242b are collectively referred to as conductor 242. Yes, there are cases where insulators 271a and 271b are collectively referred to as insulator 271. .

[0172] The insulators 280 and 275 are provided with openings that reach the oxide 230b. An insulator 250 and a conductor 260 are arranged inside the mouth. Also, the transistor 200 In the channel length direction, the insulator 271a, the conductor 242a, and the oxide 243a are insulated. Between the edge 271b, the conductor 242b, and the oxide 243b, there is a conductor 260 and an insulator A 250 is provided. The insulator 250 has a region that is in contact with the side surface of the conductor 260 and the conductor It has a region that is in contact with the bottom surface of 260.

[0173] Oxide 230 consists of oxide 230a placed on the insulator 224, and on top of oxide 230a Preferably, the oxide 230b is arranged in a certain position. Below the oxide 230b, Having 230a, the oxide 2 This can suppress the diffusion of impurities into 30b.

[0174] Furthermore, in transistor 200, oxide 230 is oxide 230a and oxide 230b Although this invention describes a configuration in which two layers are stacked, the present invention is not limited to this. For example, Alternatively, the structure may consist of a single layer of oxide 230b or a laminated structure of three or more layers, or acid Each of the oxides 230a and 230b may have a layered structure.

[0175] Conductor 260 functions as the first gate (also called top gate) electrode, and conductor 20 5 functions as the second gate (also called back gate) electrode. Also, insulator 250 The first gate insulating film acts as the first gate insulating film, and the insulators 224 and 222 act as the second gate insulating film. It functions as an insulating film. In addition, the conductor 242a is either the source electrode or the drain electrode. It functions as a source electrode or the other of a drain electrode, and conductor 242b functions as either a source electrode or a drain electrode. Furthermore, at least a portion of the region of the oxide 230 that overlaps with the conductor 260 is a channel-forming region. It functions as a region.

[0176] Oxide 230b is present in the region superimposed on conductor 242a, and in the source region and drain region. It has a side, and the region superimposed on the conductor 242b has the other of the source region and the drain region. Furthermore, the oxide 230b forms a channel in the region sandwiched between the source region and the drain region. It has a region (the region indicated by the shaded portion in FIG. 9B).

[0177] The channel formation region has less oxygen deficiency or a lower impurity concentration than the source region and the drain region, and thus is a high-resistance region with a low carrier concentration. Here, the carrier concentration of the channel formation region is preferably 1×10 cm 18 cm -3 or less, more preferably 1×10 17 cm -3 less than, still more preferably 1×10 16 cm -3 less than, still more preferably 1×10 cm 13 cm -3 less than, still more preferably 1×10 12 cm -3 less than, and still more preferably less than. Note that there is no particular limitation on the lower limit value of the carrier concentration of the channel formation region, but for example, it can be 1×10 cm -9 cm -3 or the like.

[0178] In addition, in the above, an example in which the channel formation region, the source region, and the drain region are formed in the oxide 230b has been shown, but the present invention is not limited thereto. For example, similarly, the channel formation region, the source region, and the drain region may be formed in the oxide 230a. region may be formed. region may be formed. There are cases where

[0179] The transistor 200 preferably uses a metal oxide (also referred to as an oxide semiconductor) that functions as a semiconductor for the oxide 230 (oxide 230a and oxide 230b) including the channel formation region. region may be formed. It is preferable to use

[0180] The metal oxide that functions as a semiconductor has a bandgap of 2 eV or more, preferably 2.5 eV It is preferable to use a band gap of V or higher. Thus, metal oxides with a large band gap are preferred. By using this method, the off-current of the transistor can be reduced.

[0181] As oxide 230, for example, In-M-Zn oxide having indium, element M and zinc. The elements (M are aluminum, gallium, yttrium, tin, copper, vanadium, beryllium) Boron, Titanium, Iron, Nickel, Germanium, Zirconium, Molybdenum, Lanthium N, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium It is preferable to use one or more metal oxides selected from the above. Also, oxide 23 For 0, In-Ga oxide, In-Zn oxide, or indium oxide may be used.

[0182] Here, the atomic ratio of In to element M in the metal oxide used for oxide 230b is , greater than the atomic ratio of In to element M in the metal oxide used in oxide 230a It is preferable.

[0183] Specifically, as oxide 230a, In:M:Zn = 1:3:4 [atomic ratio] or The composition in its vicinity, or In:M:Zn=1:1:0.5 [atomic ratio] or its vicinity. A metal oxide with the following composition can be used. Also, as oxide 230b, In:M:Zn=1 :1 [atomic ratio] or a composition close to that, or In:M:Zn=4:2:3 [atomic ratio] A metal oxide with a composition of the [number of particles] ratio or a nearby composition should be used. Note that nearby compositions refer to: It includes a range of ±30% of the desired atomic ratio. Furthermore, gallium can be used as element M. preferable.

[0184] Furthermore, when depositing metal oxides by sputtering, the above atomic ratio is determined by the deposited film. Not limited to the atomic ratio of metal oxides, the sputtering target used for depositing metal oxide films The atomic ratio of T may also be acceptable.

[0185] In this way, by placing oxide 230a below oxide 230b, oxide 230a Furthermore, the diffusion of impurities and oxygen into oxide 230b from the structure formed below is also reduced. It can be suppressed.

[0186] Furthermore, oxides 230a and 230b have a common element other than oxygen (main component and By doing so, the defect level density at the interface between oxide 230a and oxide 230b is reduced. This can be done. It lowers the defect level density at the interface between oxide 230a and oxide 230b. Because this is possible, the influence of interfacial scattering on carrier conduction is small, and a high on-current can be obtained. It is possible.

[0187] It is preferable that the oxides 230b each have crystalline properties. In particular, the oxides 230b are CAAC-OS(c-axis aligned crystalline oxi It is preferable to use a semiconductor.

[0188] CAAC-OS has a highly crystalline, dense structure and is free from impurities and defects (for example, Oxygen deficiency (V O Metal oxides with low oxygen vacancy (also known as oxygen vacancy) Yes. In particular, after the formation of the metal oxide, the temperature is such that the metal oxide does not undergo polycrystallization (for example, By heat treatment at temperatures between 400°C and 600°C, CAAC-OS can be made more crystalline. This allows for a more intricate structure. In this way, the density of CAAC-OS can be further increased. This makes it possible to further reduce the diffusion of impurities or oxygen in the CAAC-OS.

[0189] On the other hand, CAAC-OS is difficult to identify clear grain boundaries, so it is not caused by grain boundaries. It can be said that a decrease in electron mobility is less likely to occur. Therefore, gold with CAAC-OS The group oxides have stable physical properties. Therefore, metal oxides containing CAAC-OS are thermal It is highly reliable and robust.

[0190] Insulator 212, insulator 214, insulator 271, insulator 275, insulator 282, and insulator At least one of 283 is that impurities such as water and hydrogen are present from the substrate side, or in the transistor It functions as a barrier insulating film that suppresses diffusion from above to transistor 200. It is preferable to do so. Therefore, insulator 212, insulator 214, insulator 271, insulator 275, insulator 282, and at least one of insulator 283 contain hydrogen atoms, hydrogen molecules, and water. Nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (N2O, NO, NO2, etc.), copper atoms, etc. By using an insulating material that has the function of suppressing the diffusion of pure substances (i.e., the above impurities do not easily permeate it). This is preferable. Alternatively, the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule) It is preferable to use an insulating material that has a function to suppress (i.e., is less permeable to the above-mentioned oxygen). .

[0191] In this specification, a barrier insulating film refers to an insulating film that has barrier properties. In the specification, barrier properties refer to the function of suppressing the diffusion of the corresponding substance (also known as low permeability). (To say) Or, to capture and fix the corresponding substance (also called gettering). To make it a function.

[0192] Insulator 212, insulator 214, insulator 271, insulator 275, insulator 282, and insulator Examples of 283 include aluminum oxide, magnesium oxide, hafnium oxide, and oxide. Gallium, indium gallium zinc oxide, silicon nitride, or silicon nitride oxide, etc. For example, as insulator 212, insulator 275, and insulator 283 It is preferable to use silicon nitride or the like, which has higher hydrogen barrier properties. Also, for example, Insulators 214, 271, and 282 capture and fix hydrogen. It is preferable to use aluminum oxide or magnesium oxide, which have high functionality. As a result, impurities such as water and hydrogen enter the substrate side via insulators 212 and 214. This can suppress diffusion from the transistor 200 side. Alternatively, water, hydrogen, etc. Impurities are located outside the insulator 283, such as in the interlayer insulating film, and transistors This can suppress diffusion towards the 200 side. Alternatively, the acid contained in the insulator 224, etc. The diffusion of the element to the substrate side via the insulators 212 and 214 is suppressed. Yes, it is possible. Alternatively, oxygen contained in insulator 280, etc., can pass through insulator 282, etc. It is possible to suppress diffusion above the ZISTA 200. In this way, the transistor 200 is an insulator 21 that has the function of suppressing the diffusion of impurities such as water and hydrogen, and oxygen. 2. Insulators 214, 271, 275, 282, and 283 A surrounding structure is preferable.

[0193] Here, insulator 212, insulator 214, insulator 271, insulator 275, insulator 282, and It is preferable to use an oxide having an amorphous structure as the insulator 283. AlO x (x is any number greater than 0), or MgO y (y is any number greater than 0) It is preferable to use metal oxides such as those having an amorphous structure. In the compound, the oxygen atom has a dangling bond, and hydrogen is bonded to this dangling bond. Gold may have the property of capturing or fixing to such amorphous structures. The group oxide is used as a component of transistor 200, or around transistor 200 By placing it in the vicinity, hydrogen contained in transistor 200, or the surrounding area of ​​transistor 200 It can capture or fix hydrogen present in the surrounding area. In particular, the channel of transistor 200 It is preferable to capture or fix hydrogen contained in the molecule-forming region. The metal oxide is used as a component of transistor 200, or transistor 20 By placing it around 0, a transistor 200 with good characteristics and high reliability, and a semiconductor Conductor devices can be manufactured.

[0194] Furthermore, insulators 212, 214, 271, 275, 282, and The insulator 283 is preferably amorphous, but a portion of it may have a polycrystalline structure. They may be formed. Also, insulator 212, insulator 214, insulator 271, insulator 27 5. Insulators 282 and 283 consist of an amorphous layer and a polycrystalline layer. It may also be a multilayer structure in which layers are stacked. For example, a polycrystalline structure on top of an amorphous structure. A laminated structure in which layers are formed is also acceptable.

[0195] Insulator 212, insulator 214, insulator 271, insulator 275, insulator 282, and insulator The deposition of film 283 can be carried out, for example, using the sputtering method. The sputtering method is Since hydrogen does not need to be used as the film-forming gas, insulator 212, insulator 214, insulator 271, The hydrogen concentration of the edge 275, insulator 282, and insulator 283 can be reduced. The film deposition method is not limited to sputtering, but also includes CVD, MBE, and PLD. Methods such as the ALD method may be used as appropriate.

[0196] Furthermore, insulators 216, 280, and 285 have a higher dielectric constant than insulator 214. A low dielectric constant is preferable. By using a material with a low dielectric constant as the interlayer insulating film, parasitic activity between wiring can be reduced. The capacity can be reduced. For example, insulator 216, insulator 280, and insulator 285 For example, silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride, and fluorine Silicon oxide with added carbon, silicon oxide with added carbon and nitrogen Cone, porous silicon oxide, or other suitable materials can be used as appropriate.

[0197] The conductor 205 is arranged so as to overlap with the oxide 230 and the conductor 260. Here, It is preferable that the conductor 205 is embedded in an opening formed in the insulator 216.

[0198] Conductor 205 comprises conductor 205a, conductor 205b, and conductor 205c. Body 205a is provided in contact with the bottom surface and side wall of the opening. Conductor 205b is a conductor It is provided so as to be embedded in the recess formed in 205a. Here, the conductive material 205b The top surface is lower than the top surface of the conductor 205a and the top surface of the insulator 216. The conductor 205c is It is provided in contact with the upper surface of the conductor 205b and the side surface of the conductor 205a. Here, the conductive The height of the top surface of body 205c is equal to the height of the top surface of the conductor 205a and the height of the top surface of the insulator 216. This is roughly equivalent. In other words, conductor 205b is enclosed by conductors 205a and 205c. It will be a mixed configuration.

[0199] Conductors 205a and 205c can be used in conductor 260a, which will be described later. An electrically conductive material can be used. Also, conductor 205b is used in conductor 260b, which will be described later. A conductive material that can do this should be used. Also, in transistor 200, the conductor 205 is The diagram shows a configuration in which conductors 205a, 205b, and 205c are stacked. However, the present invention is not limited thereto. For example, the conductor 205 may be single-layer, double-layer, etc. Alternatively, it may be configured as a laminated structure of four or more layers.

[0200] Insulators 222 and 224 function as gate insulating films.

[0201] The insulator 222 suppresses the diffusion of hydrogen (for example, at least one such as a hydrogen atom or hydrogen molecule). It is preferable that the insulator 222 has the function of having oxygen (for example, oxygen atoms, acid It is preferable that it has the function of suppressing the diffusion of at least one of elementary molecules. For example, The edge material 222 can suppress the diffusion of hydrogen and / or oxygen more effectively than the insulator 224. It is preferable to do so.

[0202] The insulator 222 is an oxide of one or both of the insulating materials aluminum and hafnium. It is preferable to use an insulator containing a substance. Examples of such insulators include aluminum oxide and hafnium oxide. By using oxides containing aluminum and hafnium (hafnium aluminate), etc. This is preferable. In addition, the insulator 222 can be the insulator 214 mentioned above, etc. Alternatively, a barrier insulating film may be used.

[0203] The insulator 224 can be any suitable material such as silicon oxide or silicon oxide nitride. By providing the insulator 224 in contact with the oxide 230, the oxygen vacancies in the oxide 230 are reduced. This can reduce and improve the reliability of transistor 200. Also, the insulator 224 It is preferable that the oxide 230a is superimposed on the island-like structure. In this case, The edge 275 is configured to be in contact with the side surface of the insulator 224 and the upper surface of the insulator 222. Therefore, the insulator 224 and the insulator 280 can be separated by the insulator 275, Oxygen contained in insulator 280 diffuses into insulator 224, and the amount of oxygen in insulator 224 becomes excessive. It can help prevent excessive consumption.

[0204] Furthermore, the insulators 222 and 224 may have a laminated structure of two or more layers. In this case, the laminated structure is not limited to one made of the same material, but may also be made of different materials. In addition, in Figure 9B and other figures, the insulator 224 is superimposed with the oxide 230a to form an island-like structure. The configuration has been shown, but the present invention is not limited thereto. The insulator 224 is included If the amount of oxygen can be adjusted appropriately, the insulator 224 can be patterned in the same way as the insulator 222. It's also acceptable to configure it without this feature.

[0205] Oxide 243a and oxide 243b are provided on oxide 230b. Oxide 243a The oxide 243b and the conductor 260 are provided separated from each other. It is preferable that 243a and oxide 243b) have the function of suppressing oxygen permeation. Between the conductor 242, which functions as a source electrode or drain electrode, and the oxide 230b By arranging oxide 243, which has the function of suppressing oxygen permeability, the conductor 242 and acid This is preferable because it reduces the electrical resistance between the oxide 230b and the conductor 242. If the electrical resistance between 230b can be sufficiently reduced, a configuration without oxide 243 may be used. stomach.

[0206] As oxide 243, a metal oxide containing element M may be used. In particular, element M is aluminum Tin, gallium, yttrium, or tin may be used. Oxide 243 is an oxide. It is preferable that the concentration of element M is higher than that of 230b. Also, as oxide 243, gal oxide Rium may be used. Also, as oxide 243, metal oxides such as In-M-Zn oxide may be used. You may use a substance. Specifically, in the metal oxide used in oxide 243, with respect to In The atomic ratio of element M in the metal oxide used in oxide 230b is the ratio of element M to In. It is preferable that the atomic ratio of M is greater than that of M. Also, the film thickness of oxide 243 is 0.5 nm or more. Preferably 5 nm or less, more preferably 1 nm to 3 nm, and even more preferably 1 nm The above is less than 2 nm.

[0207] Conductor 242a is provided in contact with the upper surface of oxide 243a, and conductor 242b is oxide 2 It is preferable that it be provided in contact with the upper surface of 43b. Conductors 242a and 242b are Each functions as either the source electrode or the drain electrode of transistor 200.

[0208] The conductor 242 (conductors 242a and 242b) may include, for example, tantalum. Nitrides, titanium-containing nitrides, molybdenum-containing nitrides, tungsten-containing nitrides, Using nitrides containing titanium and aluminum, nitrides containing titanium and aluminum, etc. It is preferable that... In one embodiment of the present invention, a nitride containing tantalum is particularly preferred. Also, for example, ruthenium oxide, ruthenium nitride, strontium and ruthenium-containing acids Oxides containing lanthanum and nickel may also be used. These materials are oxidized It is a conductive material, or a material that maintains its conductivity even when it absorbs oxygen, and is therefore preferable. .

[0209] Furthermore, a curved surface is not formed between the side surface of the conductor 242 and the top surface of the conductor 242. Preferably, by using a conductor 242 in which the curved surface is not formed, as shown in Figure 9D, This allows for an increase in the cross-sectional area of ​​the conductor 242 in the channel width direction. This increases the conductivity of conductor 242 and increases the on-current of transistor 200. It is possible.

[0210] The insulator 271a is provided in contact with the upper surface of the conductor 242a, and the insulator 271b is It is provided in contact with the upper surface of the conductor 242b.

[0211] Insulator 275 is located on the top surface of insulator 222, the side surface of insulator 224, the side surface of oxide 230a, and acid The sides of the oxide 230b, the sides of the oxide 243, the sides of the conductor 242, the sides of the insulator 271 and It is provided in contact with the upper surface. The insulator 275 is provided with the insulator 250 and the conductor 260. An opening is formed in the area that is being exposed.

[0212] Within the region sandwiched between insulator 212 and insulator 275, it has the function of capturing impurities such as hydrogen. By providing insulators 214, 271, and 275, insulator 224, Alternatively, impurities such as hydrogen contained in the insulator 216, etc., are captured, and water within that region The amount of the element can be made to a constant value. In this case, the insulator 214, the insulator 271, and the insulating It is preferable that the edge material 275 contains amorphous aluminum oxide.

[0213] The insulator 250 has an insulator 250a and an insulator 250b on the insulator 250a, and a gate It functions as an insulating film. Also, the insulator 250a is on the upper surface of oxide 230b, oxide 243 The side of the conductor 242, the side of the insulator 271, the side of the insulator 275, and the insulator 2 It is preferable to position it in contact with the side surface of 80. Furthermore, the film thickness of the insulator 250 should be 1 nm or more. It is preferable to keep the wavelength at 20 nm or less.

[0214] Insulator 250a consists of silicon oxide, silicon oxide nitride, silicon oxide nitride, and silicon nitride. fluorine-added silicon oxide, carbon-added silicon oxide, carbon and nitrogen-added silicon oxide Silicon oxide, porous silicon oxide, etc. can be used. In particular, silicon oxide Cone and silicon oxide-nitride are preferred because they are stable to heat. Insulator 250a is an insulator. Similar to the edge material 224, the concentration of impurities such as water and hydrogen in the insulator 250 is reduced. It is preferable.

[0215] Insulator 250a is formed using an insulator that releases oxygen upon heating, and insulator 250b It is preferable to form this using an insulator that has the function of suppressing the diffusion of oxygen. This configuration allows oxygen contained in the insulator 250a to diffuse into the conductor 260. This can be suppressed. In other words, it is possible to suppress the decrease in the amount of oxygen supplied to oxide 230. Yes, it is possible. Furthermore, it suppresses the oxidation of the conductor 260 by oxygen contained in the insulator 250a. This is possible. For example, the insulator 250b can be provided using the same material as the insulator 222. can.

[0216] Specifically, the insulator 250b is made of hafnium, aluminum, gallium, and yttrium. Zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium Metal oxides containing one or more selected elements such as cilium, or oxide 2 Metal oxides that can be used as 30 can be used. In particular, aluminum and It is preferable to use an insulator containing an oxide of one or both of hafnium. As a body, aluminum oxide, hafnium oxide, aluminum and hafnium-containing oxides It is preferable to use a material such as hafnium aluminate. Also, the film of insulator 250b The thickness is preferably 0.5 nm or more and 3.0 nm or less, and 1.0 nm or more and 1.5 nm or less. More preferable.

[0217] In Figures 9B and 9C, the insulator 250 is shown as a two-layer laminated structure, but in the present invention... It is not limited to this. The insulator 250 may be a single layer or a laminated structure of three or more layers. stomach.

[0218] The conductor 260 is provided on the insulator 250b, and is the first gate of the transistor 200. It functions as an electrode. Conductor 260 consists of conductor 260a and is placed on top of conductor 260a. It is preferable to have a conductor 260b that has been treated. For example, the conductor 260a is a conductor It is preferable to position it so as to enclose the bottom and sides of 260b. Also, see Figures 9B and 9 As shown in C, the upper surface of the conductor 260 is approximately the same as the upper surface of the insulator 250. In Figures 9B and 9C, the conductor 260 has a two-layer structure consisting of conductor 260a and conductor 260b. As shown, it may be a single-layer structure or a laminated structure of three or more layers.

[0219] Conductor 260a contains hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules, It is preferable to use a conductive material that has the function of suppressing the diffusion of impurities such as copper atoms. Alternatively, a function that inhibits the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable to use a conductive material having [specific properties].

[0220] Furthermore, because the conductor 260a has the function of suppressing oxygen diffusion, the insulator 250 contains The presence of oxygen can suppress the oxidation of the conductor 260b, which would otherwise reduce its conductivity. Conductive materials that have the function of suppressing oxygen diffusion include, for example, titanium and titanium nitride. It is preferable to use tan, tantalum, tantalum nitride, ruthenium, ruthenium oxide, etc. stomach.

[0221] Furthermore, since the conductor 260 also functions as wiring, it is possible to use a conductor with high conductivity. Preferably, the conductor 260b is mainly composed of tungsten, copper, or aluminum. A conductive material can be used. Furthermore, the conductor 260b can also be in a laminated structure. For example, a laminated structure of titanium or titanium nitride and the above-mentioned conductive material may be used.

[0222] Furthermore, in transistor 200, the conductor 260 is formed in the insulator 280, etc. It is formed self-aligningly so as to fill the opening. By forming the conductor 260 in this way, By aligning the conductor 260 in the region between the conductor 242a and the conductor 242b, It can be positioned with absolute certainty.

[0223] Furthermore, as shown in Figure 9C, in the channel width direction of transistor 200, the insulator 22 The bottom surface of the conductor 260 that does not overlap with the oxide 230b, with reference to the bottom surface of 2. The height is preferably lower than the height of the bottom surface of oxide 230b. Functions as a gate electrode. The conductor 260, via the insulator 250 and the like, forms channel formation regions of the oxide 230b. By configuring the sides and top to cover the electric field of the conductor 260, the channels of the oxide 230b are blocked. This makes it easier to apply the effect to the entire formation region. Therefore, the on-current of transistor 200 is increased. This can improve the frequency characteristics. When the bottom surface of the insulator 222 is used as a reference, In the region where material 230a and oxide 230b and conductor 260 do not overlap, conductor 2 The difference between the base height of 60 and the base height of oxide 230b is between 0 nm and 100 nm. Preferably, 3 nm to 50 nm, more preferably 5 nm to 20 nm. do.

[0224] The insulator 280 is provided on the insulator 275, and the insulator 250 and the conductor 260 are provided. An opening is formed in the region. Also, the upper surface of the insulator 280 may be flattened. i. In this case, the upper surface of the insulator 280 is the upper surface of the insulator 250 and the upper surface of the conductor 260. It is preferable that they are roughly consistent.

[0225] The insulator 282 has an upper surface on the insulator 280, an upper surface on the insulator 250, and an upper surface on the conductor 260. They are provided in contact with each other. The insulator 282 allows impurities such as water and hydrogen to enter the insulator 280 from above. It is preferable that it functions as a barrier insulating film that suppresses diffusion of impurities such as hydrogen. It is preferable that it has a function to capture. In addition, the insulator 282 suppresses oxygen permeation. It is preferable that it functions as a rear insulating film. As the insulator 282, for example, aluminum oxide An insulator such as nium can be used. Within the region sandwiched between insulator 212 and insulator 283, An insulator 282 is provided in contact with the insulator 280, and has the function of capturing impurities such as hydrogen. By doing so, impurities such as hydrogen contained in the insulator 280 are captured, and within that region The amount of hydrogen can be kept constant. In particular, as insulator 282, amorphous structure By using aluminum oxide having or amorphous aluminum oxide This is preferable because it may be possible to capture or fix hydrogen more effectively. It is possible to fabricate a transistor 200 and a semiconductor device that have these characteristics and are highly reliable. ru.

[0226] Conductors 240a and 240b are primarily composed of tungsten, copper, or aluminum. It is preferable to use a conductive material that is as follows. Furthermore, conductors 240a and 240b are A laminated structure may be used. When the conductor 240 has a laminated structure, the conductive material in contact with the insulator 241 The body uses conductive materials that have the function of suppressing the permeation of impurities such as water and hydrogen. Preferably, a conductive material that can be used for the conductor 260a described above may be used. stomach.

[0227] Examples of insulators 241a and 241b include silicon nitride and aluminum oxide. An insulator such as silicon nitride can be used. Insulators 241a and 241b are Since it is provided in contact with insulators 283, 282, and 271, insulator 28 Impurities such as water and hydrogen contained in 0, etc., pass through conductors 240a and 240b. This can suppress contamination of oxide 230.

[0228] Furthermore, the conductors function as wiring, in contact with the upper surfaces of the conductors 240a and 240b. Conductors 246 (conductors 246a and 246b) may be arranged. Conductors 246 are It is preferable to use conductive materials whose main components are tungsten, copper, or aluminum. Furthermore, the conductor may also have a laminated structure, for example, with titanium or titanium nitride. It may also be laminated with a conductive material. The conductor is embedded in an opening provided in the insulator. It may also be formed by fitting it in.

[0229] As a result, a semiconductor device with good electrical characteristics can be provided. This can provide a good semiconductor device. Furthermore, semiconductors that can be miniaturized or highly integrated We can provide a device. We can also provide a low-power semiconductor device. .

[0230] [Metal oxides] Next, let's look at metal oxides (also called oxide semiconductors) that can be used in transistors. explain.

[0231] The metal oxide preferably contains at least indium or zinc. In particular, indium It is preferable that it also contains aluminum, gallium, and zinc. It is preferable that it contains thorium, tin, etc. Also, boron, silicon, titanium, Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium One of the following materials is selected from: luminous, hafnium, tantalum, tungsten, magnesium, cobalt, etc. It may contain one or more species.

[0232] Furthermore, metal oxides can be produced by sputtering, metal-organic chemical vapor deposition (MOCVD), and other methods. (e.g., Organic Chemical Vapor Deposition) It can be formed by methods such as CVD or ALD.

[0233] <Classification of crystal structures> The crystal structure of oxide semiconductors is amorphous (completely amorphous). (including ous), CAAC (c-axis-aligned crystalline) , nc(nanocrystalline), CAC(cloud-aligned c Polycrystalline materials include polycrystalline materials, single crystals, and polycrystalline materials. Examples include crystal, etc.

[0234] The crystal structure of the film or substrate is determined by X-ray diffraction (XRD). It can be evaluated using the (on) spectrum. For example, GIXD (Grazing- The evaluation can be performed using the XRD spectrum obtained from the Incidence XRD measurement. Yes, it is possible. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method.

[0235] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is almost symmetrical. On the other hand, in IGZO films with a crystalline structure, the peak shapes of the XRD spectra are asymmetrical. It is a term used. The asymmetrical shape of the peaks in the XRD spectrum indicates that the film or substrate is affected. This clearly indicates the presence of crystals inside. In other words, the shape of the peaks in the XRD spectrum is symmetrical. If it is not amorphous, the film or substrate cannot be said to be in an amorphous state.

[0236] Furthermore, the crystal structure of the film or substrate is determined by nano-beam diffraction (NBED). Diffraction patterns observed by electron diffraction (extremely low-voltage electrons) It can be evaluated using the sub-ray diffraction pattern (also called the sub-ray diffraction pattern). For example, diffraction of a quartz glass substrate. The pattern shows a halo, confirming that the quartz glass is in an amorphous state. Furthermore, the diffraction pattern of the IGZO film deposited at room temperature showed a spot-like pattern rather than a halo. A pattern is observed. Therefore, the IGZO film deposited at room temperature is neither crystalline nor amorphous. It is not a state, but an intermediate state, and it cannot be concluded that it is an amorphous state. .

[0237] <<Oxide semiconductor structure>> Note that oxide semiconductors may be classified differently from those described above when considering their structure. Example For example, oxide semiconductors include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. They can be separated. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc -OS exists. In addition, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors and pseudo-amorphous oxides. Amorphous-like oxide semiconductor (a-like OS) This includes conductors, amorphous oxide semiconductors, and so on.

[0238] Here, we will provide details on the CAAC-OS, nc-OS, and a-like OS mentioned above. Give an explanation.

[0239] [[CAAC-OS]] CAAC-OS has multiple crystalline regions, and these multiple crystalline regions are arranged with their c-axis in a specific direction. It is an oxide semiconductor that is oriented in a particular direction. Note that the specific direction refers to the thickness direction of the CAAC-OS film. The direction normal to the surface on which the CAAC-OS film is formed, or the direction normal to the surface of the CAAC-OS film. Furthermore, a crystalline region is a region in which the atomic arrangement has periodicity. If considered as an arrangement, a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-O S has a region in the ab-plane direction where multiple crystalline regions are connected, and this region is strained. This can sometimes occur. Note that strain refers to the deformation of the lattice arrangement in a region where multiple crystal regions are connected. Areas where the orientation of the grid arrangement changes between aligned regions and aligned regions with a different grid arrangement. This refers to the fact that CAAC-OS is c-axis oriented and has a clear orientation in the ab-plane direction. It is an oxide semiconductor that does not exist.

[0240] Each of the above multiple crystalline regions is composed of one or more minute crystals (with a maximum diameter of 10n It is composed of crystals that are less than m in size. If the crystalline region is composed of one minute crystal, The maximum diameter of the crystalline region is less than 10 nm. Furthermore, the crystalline region is composed of numerous tiny crystals. If this is the case, the size of the crystalline region may be around several tens of nanometers.

[0241] In addition, In-M-Zn oxide (where M is aluminum, gallium, yttrium, and tin) In one or more types selected from titanium, etc., CAAC-OS is indigenous A layer containing ions (In) and oxygen (hereinafter referred to as the In layer), and an element M, zinc (Zn), and oxygen A layered crystalline structure (also called a layered structure) is formed by stacking layers containing (M,Zn) layers. ) tends to have. Furthermore, indium and element M are mutually substitutable. Therefore, The (M,Zn) layer may contain indium. Additionally, the In layer contains the element M. This may occur. Furthermore, the In layer may also contain Zn. This layered structure is, for example, In high-resolution TEM images, it is observed as a grid pattern.

[0242] When structural analysis of a CAAC-OS film is performed using, for example, an XRD instrument, the θ / 2θ skid is observed. Out-of-plane XRD measurements using a champ showed a peak indicating c-axis orientation at 2θ. It is detected at 31° or near that angle. Note that the position of the peak indicating c-axis orientation (value of 2θ) This may vary depending on the type and composition of the metal elements that make up CAAC-OS.

[0243] Furthermore, for example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots (spots) may be observed. ) is observed. Note that one spot and another spot are determined by the incident electron beam that has passed through the sample. Observed at a point-symmetric position with respect to the spot (also called a direct spot) as the center of symmetry. .

[0244] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is a hexagonal lattice. While this is the basic principle, the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. Also, In the distortion described, there may be grid arrangements such as pentagons and heptagons. Note that CAAC- In OS, clear grain boundaries can be observed even near strain. It is not possible. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This can be seen. This is because CAAC-OS has a dense arrangement of oxygen atoms in the ab-plane direction. This is due to the absence of certain elements, and the fact that the bond distance between atoms changes when metal atoms are substituted. This is thought to be because it allows for some distortion.

[0245] Furthermore, a crystal structure in which clear grain boundaries can be observed is known as polycrystalline. It is called l). The grain boundaries become recombination centers, where carriers are trapped and the transistor is formed This is highly likely to cause a decrease in current, a decrease in field-effect mobility, etc. Therefore, a clear conclusion is reached. CAAC-OS, which lacks visible grain boundaries, has a crystal structure suitable for the semiconductor layer of transistors. It is one of the crystalline oxides. Note that CAAC-OS requires the presence of Zn. The configuration is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are In oxide It is preferable because it can suppress the generation of grain boundaries more effectively than other materials.

[0246] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less prone to a decrease in electron mobility caused by grain boundaries. Furthermore, the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities and the formation of defects. Because of this, CAAC-OS is an oxide semiconductor with few impurities and defects (such as oxygen vacancies). It can also be said that oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are highly heat-resistant and reliable. AC-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Yes. Therefore, using CAAC-OS in OS transistors expands the degree of freedom in the manufacturing process. This becomes possible.

[0247] [[nc-OS]] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially between 1 nm and 3 nm). It has periodicity in the atomic arrangement in the region of less than nm. In other words, nc-OS is minute It has crystals. The size of these minute crystals is, for example, between 1 nm and 10 nm. In particular, because they are between 1 nm and 3 nm in size, these minute crystals are also called nanocrystals. In nc-OS, no regularity is observed in the crystal orientation between different nanocrystals. Therefore, across the entire film... No orientation is observed. Therefore, nc-OS is a-like OS depending on the analysis method. And / or it may be indistinguishable from amorphous oxide semiconductors. For example, in an nc-OS film In contrast, when structural analysis is performed using an XRD device, out-of- In plane XRD measurements, no peaks indicating crystallinity were detected. Furthermore, the nc-OS film... In contrast, electron beams with probe diameters larger than those of nanocrystals (e.g., 50 nm or more) are used. When linear diffraction (also called limited-field electron diffraction) is performed, diffraction patterns such as halo patterns are observed. On the other hand, for the nc-OS film, the size is close to or smaller than that of the nanocrystals. Electron diffraction (nanobi) is a method that uses electron beams with a probe diameter (e.g., 1 nm to 30 nm). Also called electron diffraction. When this is performed, a ring-shaped region is formed around the direct spot. In some cases, an electron diffraction pattern may be obtained in which multiple spots are observed within the same area.

[0248] [[a-like OS]] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. It is a conductor. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, it has a-like properties. OS has a higher hydrogen concentration in the membrane compared to nc-OS and CAAC-OS.

[0249] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS is a material composition. Regarding.

[0250] [[CAC-OS]] CAC-OS refers to, for example, metal oxides in which the elements constituting the metal oxide are between 0.5 nm and 10 nm in size. Preferably, a composition of material that is unevenly distributed with a size of 1 nm to 3 nm or near that size. In addition, in the following, in a metal oxide, one or more metal elements are unevenly distributed, The region containing the metallic element is 0.5 nm to 10 nm, preferably 1 nm to 3 nm. The following state, where particles of similar or near-similar size are mixed, is also referred to as a mosaic or patchy appearance.

[0251] Furthermore, CAC-OS is a system where the material separates into a first region and a second region, resulting in a mosaic effect. This results in a cloud-like structure, where the first region is distributed within the membrane (hereinafter also referred to as a cloud-like structure). Therefore, CAC-OS is a mixture of the first region and the second region. It is a composite metal oxide having the following configuration.

[0252] Here, In for the metal elements constituting CAC-OS in In-Ga-Zn oxide The atomic ratios of , Ga, and Zn are denoted as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in In-Ga-Zn oxide, the first region is [ This is the region where [In] is greater than [In] in the composition of the CAC-OS film. Also, the second This region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Alternatively, for example, in the first region, [In] is greater than [In] in the second region. Furthermore, the region where [Ga] is smaller than the region where [Ga] is smaller. In region 2, [Ga] is greater than [Ga] in region 1, and [In] is This is a region smaller than [In] in the first region.

[0253] Specifically, the first region mentioned above is mainly composed of indium oxide, indium zinc oxide, etc. This is the region. Furthermore, the second region mentioned above includes gallium oxide, gallium zinc oxide, etc. This is the region in which is the principal component. In other words, the first region described above is called the region in which In is the principal component. It can be replaced. Furthermore, the second region mentioned above can be rephrased as the region with Ga as the main component. It is possible.

[0254] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0255] Furthermore, CAC-OS in In-Ga-Zn oxide refers to In, Ga, Zn, and O In the material composition, there is a region where Ga is the main component and a region where In is the main component. This refers to a configuration in which each region is mosaic-like, and these regions exist randomly. Therefore, it is presumed that CAC-OS has a structure in which metallic elements are unevenly distributed. .

[0256] CAC-OS is formed, for example, by sputtering under conditions where the substrate is not heated. This is possible. Also, when forming CAC-OS by sputtering, the film deposition gas is not Select one of the following gases: active gas (typically argon), oxygen gas, and nitrogen gas. One or more may be used. Also, the flow rate of oxygen gas relative to the total flow rate of the film deposition gas during film formation. A lower ratio is preferable; for example, the ratio of the oxygen gas flow rate to the total flow rate of the film deposition gas during film formation is It is preferable that the amount be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0257] Furthermore, for example, in CAC-OS in In-Ga-Zn oxide, energy-dispersive X Linear spectroscopy (EDX: Energy Dispersive X-ray spectrometer) EDX mapping obtained using scopy revealed a region with In as its main component (1st A structure in which a region (the first region) and a region mainly composed of Ga (the second region) are unevenly distributed and mixed. It can be confirmed that they possess it.

[0258] Here, the first region is a region with higher conductivity compared to the second region. In other words, the first region The flow of carriers through this region leads to the emergence of conductivity as a metal oxide. Therefore The first region is distributed in a cloud-like manner within the metal oxide, resulting in a high field-effect mobility (μ This can be achieved.

[0259] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the second region By distributing the region within the metal oxide, leakage current can be suppressed.

[0260] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the second region The insulating properties originating from region 2 work complementaryly to create a switching function. (The function to turn it on / off) can be added to CAC-OS. In other words, CAC- OS refers to a material that has both conductive and insulating properties in some parts. The whole structure functions as a semiconductor. The conductive and insulating functions are separated. This allows both functions to be maximized. Therefore, CAC-OS is transistor By using it, a high on-current (I on ), high field effect mobility (μ), and good swim It can perform a clicking motion.

[0261] Furthermore, transistors using CAC-OS are highly reliable. Therefore, CAC-OS is, It is ideal for various semiconductor devices, including display devices.

[0262] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and CA. It may have two or more of the following: C-OS, nc-OS, and CAAC-OS.

[0263] This embodiment can be combined with other embodiments as appropriate.

[0264] (Embodiment 3) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figure 10.

[0265] The display device of this embodiment is an m-row, n-column matrix (where m and n are integers greater than or equal to 1). It has multiple pixels arranged in a certain manner. Figure 10 shows a pixel PIX(i,j) (where i is 1 or greater than or equal to m). An example of a circuit diagram for the integers below (where j is an integer between 1 and n, inclusive) is shown.

[0266] The pixels PIX(i,j) shown in Figure 10 are light-emitting devices 110 (also called light-emitting elements), and It has a switch SW21, a transistor M, and a capacitor C1. The pixel PIX(i,j) is further It may also have a switch SW22. Here, as the light-emitting device 110, An example using a diode is shown. In particular, a micro-light-emitting diode is used as the light-emitting device 110. It is preferable to use an iodine.

[0267] In this embodiment, an example is shown in which a transistor is used as the switch SW21. The gate of SW21 is electrically connected to scan line GL1(i). The drain and the other are electrically connected to the signal line SL(j) on one side and to the transistor on the other. It is electrically connected to the gate M.

[0268] In this embodiment, an example is shown in which a transistor is used as the switch SW22. The gate of SW22 is electrically connected to scan line GL2(i). The drain and the gate of transistor M are connected, with one being electrically connected to wiring COM and the other to the gate of transistor M. It is electrically connected to the .

[0269] The gate of transistor M is connected to one electrode of capacitor C1, and the source and drain of switch SW21. It is electrically connected to the other end of the input, and to the other end of the source and drain of switch SW22. The source and drain of transistor M are electrically connected to the wiring CATHODE, one of which is connected to the other. The other end is electrically connected to the cathode of the light-emitting device 110.

[0270] The other electrode of capacitance C1 is electrically connected to the wiring CATHODE.

[0271] The anode of the light-emitting device 110 is electrically connected to the wiring ANODE.

[0272] Scan line GL1(i) has the function of supplying a selection signal. Scan line GL2(i) is control It has the function of supplying signals. Signal line SL(j) has the function of supplying image signals. A constant potential is supplied to the COM, CATHODE, and ANODE wires, respectively. The anode side of the light-emitting device 110 is set to a high potential, and the cathode side is set to a lower potential than the anode side. It can be done.

[0273] Switch SW21 is controlled by a selection signal and controls the selected state of pixel PIX(i,j). It functions as a selection transistor for that purpose.

[0274] Transistor M controls the current flowing to the light-emitting device 110 in accordance with the potential supplied to its gate. It functions as a control drive transistor. When switch SW21 is in the conductive state, the signal line The image signal supplied to SL(j) is supplied to the gate of transistor M, and depending on its potential... This allows the luminescence brightness of the light-emitting device 110 to be controlled.

[0275] Switch SW22 has the function of controlling the gate potential of transistor M based on a control signal. It has. Specifically, switch SW22 generates a potential that puts transistor M into a non-conductive state. It can be supplied to the gate of transistor M.

[0276] Switch SW22 can be used, for example, to control pulse width. Based on control signals. During this period, current can be supplied from transistor M to the light-emitting device 110. Alternatively, The light-emitting device 110 can express gradations based on image signals and control signals. .

[0277] Here, each transistor in pixel PIX(i,j) has a channel formed within it. It is preferable to apply a transistor using a metal oxide (oxide semiconductor) as the semiconductor layer. stomach.

[0278] A metal oxide with a wider band gap and lower carrier concentration than silicon is used in this technology. The inverter can achieve an extremely small off-current. The electric current allows the charge stored in the capacitor connected in series with the transistor to be retained for a long period of time. It is possible to do so. Therefore, in particular, switch SW21 connected in series with capacitor C1 and For switch SW22, it is preferable to use a transistor with an oxide semiconductor applied. Furthermore, other transistors also use oxide semiconductors in a similar manner. This can reduce manufacturing costs.

[0279] Furthermore, the transistors in the pixel PIX(i,j) have a channel formed in the semiconductor. Transistors with ricon applied can also be used. In particular, single-crystal silicon and polycrystalline silicon By using one or more types of highly crystalline silicon such as Ricon, a high field effect transfer can be achieved. This is preferable because it allows for greater mobility and enables faster operation.

[0280] Furthermore, oxide semiconductors are applied to one or more of the transistors in the pixel PIX(i,j). The configuration uses transistors with silicon applied to them, and other transistors with silicon applied to them. That's fine.

[0281] Note that in Figure 10, the transistor is represented as an n-channel transistor. However, p-channel transistors can also be used.

[0282] This embodiment can be combined with other embodiments as appropriate.

[0283] (Embodiment 4) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 11 to 15. ru.

[0284] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device has high display quality and low power consumption. The device allows for easy enhancement of both resolution and image quality. Therefore, it can be used in the display sections of various electronic devices. It can be used.

[0285] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Sony Computer, monitors for computers, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, and digital cameras Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples include sound reproduction devices.

[0286] In particular, the display device according to one aspect of the present invention is capable of increasing resolution, making it suitable for relatively small displays. It can be suitably used in electronic devices having an indicator. For example, Examples include wristwatch-type and bracelet-type information terminals (wearable devices). Or, such electronic devices include VR devices such as head-mounted displays, Wearable devices that can be worn on the head, such as headgear-type AR devices and MR devices. It can be listed.

[0287] A display device according to one aspect of the present invention is HD (1280 x 720 pixels) and FHD (192 pixels). 0x1080), WQHD (2560x1440 pixels), WQXGA (2560 pixels) 1600x1600, 4K (3840x2160 pixels), 8K (7680x4320 pixels) It is preferable that the resolution is extremely high, especially 4K, 8K, or higher. It is preferable to have a resolution of the above. Also, the pixel density (resolution) in the display device according to one aspect of the present invention The fineness is preferably 300 ppi or higher, more preferably 500 ppi or higher, and 1000 ppi. pi or higher is more preferable, 3000ppi or higher is more preferable, and 5000ppi or higher is preferable. More preferably, and even more preferably, 7000 ppi or higher. Such high resolution and / or By using a display device with high resolution, personal users such as portable and home users can In electronic devices, it becomes possible to further enhance the sense of realism and depth.

[0288] The electronic device of this embodiment has sensors (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation (including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It's fine if you do that.

[0289] The electronic device of this embodiment can have various functions. For example, it can display various information (static Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar - Functions to display the date or time, and to run various software (programs) Functions, wireless communication functions, and functions to read programs or data recorded on recording media. It may have the following:

[0290] Figure 11A shows a perspective view of the glasses-type electronic device 700. The electronic device 700 has a pair of displays Panel 701, pair of housings 702, pair of optical elements 703, pair of mounting parts 704, frame It has parts such as part 707 and nose pads 708.

[0291] The electronic device 700 displays the image displayed on the display panel 701 in the display area 706 of the optical component 703. An image can be projected. Since the optical element 703 is light-transmitting, the user can project an image. View the image displayed in the display area 706 by superimposing it onto the transmitted image visible through 703. Therefore, electronic device 700 is an electronic device capable of AR display.

[0292] One or both of the housings 702 are equipped with a camera capable of imaging the area in front. The housing 702 may also have a wireless communication device, and the housing may have a wireless communication device It can supply video signals, etc., to 702. Note that this can be used in place of a wireless communication device, or wireless communication In addition to the transmitter, a connector to which a cable supplying video signals and / or power potential can be connected. It may also be equipped with a gyroscope. Furthermore, the housing 702 may be equipped with an acceleration sensor such as a gyroscope. By doing so, the orientation of the user's head is detected, and an image corresponding to that orientation is displayed in the display area 706. It can also be displayed.

[0293] A processor may be provided in one or both of the chassis 702. Various components of the electronic device 700, such as a camera, wireless communication device, and a pair of display panels 701 It has functions to control the network and functions to generate images. The processor is AR It may also have a function to generate a composite image for display.

[0294] Furthermore, wireless communication devices can be used to communicate data with external devices. For example, external The data transmitted from is output to the processor, and the processor, based on that data, A It is also possible to generate image data for R display. An example of data transmitted externally is... In addition to image data, this includes data containing biological information transmitted from biosensor devices, etc. These are some examples.

[0295] Using Figure 11B, the method for projecting an image onto the display area 706 of the electronic device 700 will be explained. Inside the housing 702, a display panel 701 is provided. Also, an optical component 703 A reflector 712 is provided therein, and in the portion corresponding to the display area 706 of the optical element 703, A reflective surface 713 is provided that functions as a half-mirror.

[0296] The light 715 emitted from the display panel 701 is reflected towards the optical element 703 by the reflector 712. It is projected. Inside the optical member 703, light 715 undergoes total internal reflection at the end face of the optical member 703. By repeatedly reaching the reflective surface 713, an image is projected onto the reflective surface 713. The user then uses the light 715 reflected by the reflective surface 713 and the optical element 703 (reflective surface 713 Both the transmitted light 716 (including) that has passed through it can be seen.

[0297] Figure 11 shows an example where the reflector 712 and the reflective surface 713 each have curved surfaces. This allows for greater freedom in optical design compared to when these are planar, and light The thickness of the structural member 703 can be reduced. Furthermore, the reflector plate 712 and the reflective surface 713 can be flattened. It can also be used as a surface.

[0298] As the reflector 712, a material having a mirror surface can be used, and it is preferable that it has a high reflectivity. It is also possible to use a half-mirror that utilizes the reflection of a metal film as the reflective surface 713. However, by using a prism that utilizes total internal reflection, the transmittance of transmitted light 716 can be increased. can.

[0299] Here, the housing 702 has a lens between the display panel 701 and the reflector 712. This is also acceptable. In this case, the housing 702 is such that the distance between the lens and the display panel 701, and these It is preferable to have a mechanism for adjusting the angle. This allows for adjustment of focus and image quality. It becomes possible to enlarge or reduce the image. For example, the lens or display panel 701 One or both of them may be configured to be movable in the optical axis direction.

[0300] Furthermore, it is preferable that the housing 702 has a mechanism that allows the angle of the reflector 712 to be adjusted. By changing the angle of the reflector 712, the position of the display area 706 where the image is displayed is changed. This makes it possible to position the display area 70 in the optimal location according to the user's eye position. It becomes possible to place a 6.

[0301] It is preferable that the housing 702 is equipped with a battery 717 and a wireless power supply module 718. It is possible to connect a separate battery to the electronic device 700 by having a battery 717. It can be used without any issues, thus increasing convenience. Also, wireless power supply module Having the 718 allows for wireless charging, thus improving convenience and design. This can improve performance. Furthermore, compared to wired charging using connectors, etc., contact is less This can reduce the risk of malfunctions such as poor performance and improve the reliability of electronic devices 700.

[0302] The housing 702 is equipped with a touch sensor module 719. The wire 719 has the function of detecting when the outer surface of the housing 702 is touched. Figure 1 In 1B, the surface of the housing 702 is shown being touched by finger 720. Touch sensor module The 719 detects user tap and / or slide operations, and various other actions. It can perform various operations. For example, it can pause and resume a video with a tap. Which process to execute, and whether to perform fast forward and rewind operations via slide operation. This makes it possible to do things like that. Also, each of the two housings 702 has a touch sensor module. By providing the Ru-719, the range of operations can be broadened.

[0303] Various touch sensors can be applied to the touch sensor module 719. For example, capacitance, resistive film, infrared, electromagnetic induction, surface acoustic wave, optics Various methods can be employed, such as capacitive or optical sensors. It is preferable to apply the sensor to the touch sensor module 719.

[0304] When using an optical touch sensor, the light-receiving device (also called a light-receiving element) is: A photoelectric conversion device (also called a photoelectric conversion element) can be used. These include those using inorganic semiconductors or organic semiconductors for the active layer. .

[0305] A display device according to one embodiment of the present invention can be applied to the display panel 701. This allows for the creation of an electronic device 700 capable of displaying extremely high resolution.

[0306] Figures 12A and 12B show perspective views of the goggle-type electronic device 950. Figure 12A shows the electronic Figure 12B is a perspective view showing the front, top, and left side of the device 950, and Figure 12B shows the electronic device 950. This is a perspective view showing the back, bottom, and right side.

[0307] The electronic device 950 includes a pair of display panels 951, a housing 952, a pair of mounting parts 954, and a buffer part. It has a material 955, a pair of lenses 956, etc. A pair of display panels 951 are located inside the housing 952. They are positioned in a location visible through the lens 956.

[0308] Electronic device 950 is an electronic device for VR. Users wearing electronic device 950, The image displayed on the display panel 951 can be viewed through the lens 956. By displaying different images on a pair of display panels 951, a 3D display using parallax is achieved. It is also possible to do so.

[0309] The rear side of the enclosure 952 is provided with an input terminal 957 and an output terminal 958. The sub-unit 957 receives video signals from video output devices, etc., and a battery located inside the housing 952. A cable can be connected to supply power for charging, etc. Output terminal 958 is For example, it can function as an audio output terminal, allowing you to connect earphones or headphones, etc. It can be continued. Furthermore, if the configuration allows for the output of audio data via wireless communication, Alternatively, if audio is output from an external video output device, it is not necessary to provide the audio output terminal. That's good too.

[0310] The electronic device 950 has a lens 956 and a display panel 951 that adjust according to the user's eye position. It is preferable that these have a mechanism that allows for adjustment of their left and right positions to achieve the optimal position. It is also possible to adjust the focus by changing the distance between the lens 956 and the display panel 951. It is preferable that it has a mechanism to do so.

[0311] A display device according to one aspect of the present invention can be applied to the display panel 951. This allows for the creation of an electronic device 950 capable of displaying extremely high resolution. It can provide a high level of immersion for the user.

[0312] The cushioning member 955 is the part that comes into contact with the user's face (forehead and cheeks, etc.). The close contact of the 5 in the user's face prevents light leakage, enhancing immersion. This is possible. The cushioning member 955 is used when the user attaches the electronic device 950. It is preferable to use a soft material that will adhere closely to the face. For example, rubber or silicone rubber. Materials such as urethane and sponge can be used. Also, as the cushioning material 955, If you use a sponge or similar material with its surface covered with cloth or leather (genuine or synthetic leather), This makes it less likely for a gap to form between the user's face and the cushioning material 955, effectively preventing light leakage. The cushioning member 955 and the mounting part 954, and other parts that come into contact with the user's skin, are respectively A removable configuration is preferable because it facilitates cleaning and replacement.

[0313] The electronic device 6500 shown in Figure 13A is a portable information device that can be used as a smartphone. It is a terminal device.

[0314] The electronic device 6500 consists of a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, includes speaker 6505, microphone 6506, camera 6507, and light source 6508, etc. The display unit 6502 is equipped with a touch panel function.

[0315] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0316] Figure 13B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0317] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. Within the space surrounded by the protective member 6510, there is a display panel 6511, an optical member 6512, and a touch The sensor panel 6513, printed circuit board 6517, battery 6518, etc. are located here. .

[0318] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The 6513 is fixed by an adhesive layer (not shown).

[0319] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back. The FPC6515 is connected to the folded portion. C6516 is mounted. FPC6515 is located on the edge of the printed circuit board 6517. It is connected to the child.

[0320] A flexible display according to one aspect of the present invention can be applied to the display panel 6511. This makes it possible to create extremely lightweight electronic devices. Also, the display panel 6511 is extremely Because it is thin, it is possible to keep the thickness of electronic devices down while also equipping them with a large-capacity 6518 battery. Also, a part of the display panel 6511 is folded back, and the FPC6515 is attached to the back of the pixel area. By positioning the connection points, it is possible to realize electronic devices with narrow bezels.

[0321] Figure 14A shows an example of a television system. The television system 7100 is housed in a casing 7101 The display unit 7000 is incorporated into it. Here, the stand 7103 connects to the housing 7101. This shows a configuration that supports this.

[0322] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0323] The television device 7100 shown in Figure 14A is operated using the control switches provided on the housing 7101. , and can be performed by a separate remote control unit 7111. Alternatively, the display unit 700 It may also be equipped with a touch sensor, and by touching the display unit 7000 with a finger, etc., the TV will The control device 7100 may be operated. The remote control operator 7111 is the remote control operator 71 It may have a display unit that displays the information output from 11. The channel and volume can be controlled using the built-in control keys or touch panel. The video displayed on the display unit 7000 can be operated.

[0324] The television system 7100 will consist of a receiver and a modem, etc. This allows you to receive regular television broadcasts. Additionally, you can receive them via a modem using either a wired or wireless connection. By connecting to a line communication network, one-way (sender to receiver) or bidirectional communication is possible. It is also possible to communicate information in a direction (between a sender and receiver, or between receivers). ru.

[0325] Figure 14B shows an example of a notebook personal computer. The computer 7200 consists of a chassis 7211, a keyboard 7212, and a pointing device 721. 3. It has external connection ports 7214, etc. The display unit 7000 is incorporated into the housing 7211. It is.

[0326] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0327] Figures 14C and 14D show examples of digital signage.

[0328] The digital signage 7300 shown in Figure 14C consists of a housing 7301, a display unit 7000, and a screen. It has a Pika 7303, etc. Furthermore, it has an LED lamp, an operation key (power switch, or operation key). It may include a switch, connection terminals, various sensors, a microphone, etc.

[0329] Figure 14D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is installed along the curved surface of the column 7401. do.

[0330] In Figures 14C and 14D, a display device according to one embodiment of the present invention is applied to the display unit 7000. It is possible.

[0331] The larger the display area 7000, the more information can be provided at once. The wider the area (7000), the more easily it catches people's attention, which can, for example, enhance the effectiveness of advertising. Cut.

[0332] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It's desirable that it not only displays information but also allows users to operate it intuitively. Also, route information... Alternatively, if used for purposes such as providing traffic information, intuitive operation is possible. This can improve usability.

[0333] Furthermore, as shown in Figures 14C and 14D, the digital signage 7300 or digital signage Inage 7400 is an information terminal 7311 or a smartphone owned by the user. It is preferable that the information terminal 7411 can be linked via wireless communication. For example, the display unit 7 Information about the advertisement displayed at 000 is shown on the screen of information terminal 7311 or information terminal 7411. It can be displayed on the information terminal 7311 or the information terminal 7411. This allows you to switch the display on the 7000 display unit.

[0334] In addition, the information terminal 7 is connected to the digital signage 7300 or digital signage 7400. Execute a game using the screen of either the 311 or the information terminal 7411 as the control device (controller). It is also possible to allow this. This allows a large number of users to participate in the game simultaneously and enjoy it. It is possible.

[0335] The electronic equipment shown in Figures 15A to 15F consists of a housing 9000, a display unit 9001, and a speaker 90 03. Operation key 9005 (including power switch or operation switch), connection terminal 900 6. Sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, Magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity (Including functions for measuring degrees, incline, vibration, odor, or infrared radiation), Microphone 90 It has 08, etc.

[0336] The electronic devices shown in Figures 15A to 15F have various functions. For example, they can display various information (static Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar - Functions that display the date or time, etc., processed by various software (programs) Functions to control the system, wireless communication functions, programs or data recorded on the recording medium. It may have functions such as reading and processing data. However, the functions of electronic devices are not limited to these. It is not limited to having multiple displays, and can have various functions. Furthermore, an electronic device may be equipped with a camera, etc., to capture still images and / or videos, and recorded on a recording medium (external Features include the ability to save images to the display unit or camera, and the ability to display captured images on the display unit. It's okay to do so.

[0337] The details of the electronic equipment shown in Figures 15A to 15F will be explained below.

[0338] Figure 15A is a perspective view showing the personal digital assistant 9101. The personal digital assistant 9101 is, for example, It can be used as a smartphone. Note that the mobile information terminal 9101 has a speaker. 9003, connection terminal 9006, sensor 9007, etc. may be provided. Also, portable information terminal 9 101 can display text and / or image information on its multiple surfaces. Figure 15A The following shows an example displaying three icons 9050. Also, information 9 is shown by a dashed rectangle. 051 can also be displayed on other sides of the display unit 9001. An example of information 9051 is as follows: Notifications of incoming emails, social media messages, and phone calls; subject and sender information for emails, social media messages, etc. It includes name, date and time, battery level, signal strength, etc. Alternatively, information 9051 may be displayed. You may display icons such as icon 9050 in the designated area.

[0339] Figure 15B is a perspective view showing the personal digital assistant 9102. The personal digital assistant 9102 displays It has the function of displaying information on three or more sides of section 9001. Here, information 9052, information 9 This shows an example where information 053 and 9054 are displayed on different sides. For example, the user With the mobile information terminal 9102 stored in the breast pocket of his clothing, the mobile information terminal 9102 Information 9053, displayed in a position that can be observed from above, can also be viewed by the user. Without taking the 9102 personal digital assistant out of your pocket, you can check the display and, for example, answer a phone call. It allows you to decide whether or not to do it.

[0340] Figure 15C is a perspective view showing a wristwatch-type personal information terminal 9200. Personal information terminal 920 0 can be used, for example, as a smartwatch. Also, the display unit 9001 is The display surface is curved, allowing the display to follow the curved surface. The wireless information terminal 9200 communicates with, for example, a wireless headset. It also allows for hands-free calling. Furthermore, the mobile information terminal 9200 has a connection terminal 90 06 enables mutual data transmission with other information terminals and / or charging. It is also possible to do so. Furthermore, charging may be performed via wireless power transfer.

[0341] Figures 15D to 15F are perspective views showing a foldable portable information terminal 9201. Figure 15D shows the mobile information terminal 9201 in its unfolded state, Figure 15F shows it in its folded state, Figure 15 Figure E is a perspective view showing the transitional state between Figure 15D and Figure 15F. The 9201 terminal offers excellent portability when folded and a wide, seamless design when unfolded. The display area provides excellent readability. The display unit 9001 of the portable information terminal 9201 is It is supported by three housings 9000 connected by hinges 9055. For example, the table The indicated portion 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0342] This embodiment can be appropriately combined with other embodiments and examples. [Explanation of symbols]

[0343] ANODE: wiring, CATHODE: wiring, COM: wiring, CCMR: color conversion layer, CFR :Colored layer, C1:Capacitance, GL1:Scan line, GL2:Scan line, M:Transistor, PIX: Pixel, SL: signal line, SW21: switch, SW22: switch, 100A: display device, 100B: Display device, 100C: Display device, 101: Substrate, 102: Insulating layer, 103: Insulation Edge layer, 104: insulating layer, 110: light-emitting device, 110a: light-emitting diode, 110b: Light-emitting diode, 112: conductive film, 112a: electrode, 112b: electrode, 113: semiconductor film , 113a: semiconductor layer, 113b: semiconductor layer, 114: light emitter, 114a: light emitter layer, 11 4b: light-emitting layer, 115: semiconductor film, 115a: semiconductor layer, 115b: semiconductor layer, 116a : conductive layer, 116b: conductive layer, 116c: conductive layer, 116d: conductive layer, 116e: conductive layer , 117a: electrode, 117b: conductive layer, 117c: electrode, 117d: conductive layer, 120a: Transistor, 120b: Transistor, 130a: Transistor, 130b: Transistor 131: substrate, 132: element isolation layer, 133: low resistance region, 134: insulating layer, 13 5: conductive layer, 136: insulating layer, 137: conductive layer, 138: conductive layer, 139: insulating layer, 14 1: Insulating layer, 142: Conductive layer, 143: Insulating layer, 150A: LED substrate, 150B: Circuit Substrate, 152: insulating layer, 161: conductive layer, 162: insulating layer, 163: insulating layer, 164: insulating layer Edge layer, 165: Metal oxide layer, 166: Conductive layer, 167: Insulating layer, 168: Conductive layer, 18 1: insulating layer, 182: insulating layer, 183: insulating layer, 184a: conductive layer, 184b: conductive layer, 185: insulating layer, 186: insulating layer, 187: insulating layer, 188: insulating layer, 189: conductive layer, 189a: conductive layer, 189b: conductive layer, 190a: conductive layer, 190b: conductive layer, 190c : conductive layer, 190d: conductive layer, 191: substrate, 192: adhesive layer, 193: insulating layer, 194 : insulating layer, 200: transistor, 205: conductor, 205a: conductor, 205b: conductive Body, 205c: Conductor, 212: Insulator, 214: Insulator, 216: Insulator, 222: Insulator Edge material, 224: insulator, 230: oxide, 230a: oxide, 230b: oxide, 240 : Conductor, 240a: Conductor, 240b: Conductor, 241: Insulator, 241a: Insulator, 241b: insulator, 242: conductor, 242a: conductor, 242b: conductor, 243: acid compound, 243a: oxide, 243b: oxide, 246: conductor, 246a: conductor, 24 6b: Conductor, 250: Insulator, 250a: Insulator, 250b: Insulator, 260: Conductor 260a: Conductor, 260b: Conductor, 271: Insulator, 271a: Insulator, 271b :Insulator, 275:Insulator, 280:Insulator, 282:Insulator, 283:Insulator, 285 :Insulator, 700:Electronic equipment, 701:Display panel, 702:Housing, 703:Optical component, 704: Mounting part, 706: Display area, 707: Frame, 708: Nose pad, 712: Reverse 713: Reflecting surface, 715: Light, 716: Transmitted light, 717: Battery, 718: Wireless Power supply module, 719: Touch sensor module, 720: Finger, 950: Electronic device, 9 51: Display panel, 952: Housing, 954: Mounting part, 955: Cushioning member, 956: Lens ,957: Input terminal, 958: Output terminal, 6500: Electronic equipment, 6501: Enclosure, 650 2: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506 : Microphone, 6507: Camera, 6508: Light source, 6510: Protective component, 6511: Display panel Nell, 6512: Optical components, 6513: Touch sensor panel, 6515: FPC, 651 6: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100 :Television equipment, 7101:Housing, 7103:Stand, 7111:Remote control unit 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard 7213: Pointing device, 7214: External connection port, 7300: Digital Signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Enclosure, 9001 : Display unit, 9003: Speaker, 9005: Operation keys, 9006: Connection terminals, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Mobile information terminal, 9102: Mobile information terminal, 9200: Mobile information terminal, 9201: Mobile information terminal

Claims

[Claim 1] It comprises a transistor, a light-emitting diode, a first conductive layer, a second conductive layer, a first insulating layer, and a second insulating layer. The transistor is electrically connected to the first conductive layer, The first conductive layer is located on the transistor, The first insulating layer is located on the transistor, The second conductive layer is located on the first conductive layer, The second insulating layer is located on the first insulating layer, The light-emitting diode comprises a first electrode on the second insulating layer, a light-emitting layer on the first electrode, and a second electrode on the light-emitting layer. The second electrode is electrically connected to the second conductive layer, The height of the surface of the first conductive layer facing the second conductive layer is approximately equal to the height of the surface of the first insulating layer facing the second insulating layer. The first insulating layer and the second insulating layer are directly joined together. A display device wherein the second conductive layer is located inside an opening in the second insulating layer and is electrically connected to the first conductive layer.

Images