Indication device
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Filing Date
- 2026-03-11
- Publication Date
- 2026-06-23
Smart Images

Figure 2026102738000001_ABST
Abstract
Claims
[Claim 1] Semiconductor layer, The first insulating layer on the semiconductor layer, The gate electrode and the first conductive layer on the first insulating layer, The gate electrode and the second insulating layer on the first conductive layer, The source electrode, drain electrode, and second conductive layer on the second insulating layer, A third insulating layer on the source electrode, on the drain electrode, and on the second conductive layer, The first electrode and the third conductive layer on the third insulating layer, A planarization film covering the end of the first electrode, The electroluminescent layer on the first electrode, The electroluminescent layer and the planarization film have a second electrode, The second electrode is electrically connected to the third conductive layer through an opening provided in the planarized film. The light-emitting device is characterized in that the opening overlaps with the first conductive layer, the second conductive layer, and the third conductive layer.