Optoelectronic structural elements, pixels, display arrangement structures, and methods related thereto

Abstract

A photoelectronic structure element is proposed, comprising at least one semiconductor element having an active zone formed to generate light. [Solution] The photoelectronic structure element 10 includes a dielectric filter 18 disposed on a first main surface of at least one semiconductor element 12 and formed to transmit light only in a predetermined direction, and a reflective material 19 disposed on at least one side surface 16 of the at least one semiconductor element 12 and at least one side surface 16 of the dielectric filter 18.

Claims

1. A photoelectronic structure element, A semiconductor device having an active zone formed to generate light, A dielectric filter is disposed on the first main surface of the at least one semiconductor element and is formed to transmit light only in a predetermined direction, A reflective material disposed on at least one side of the at least one semiconductor element and at least one side of the dielectric filter A photoelectronic structure element having the following characteristics.

2. The photoelectronic structure element according to claim 1, wherein at least one side surface of the at least one semiconductor element extends inclined at the height of the active zone.

3. The at least one semiconductor element has a first terminal and a second terminal, The photoelectronic structure element according to claim 1 or 2, wherein the reflective material is conductive and coupled to a first terminal of the at least one semiconductor element.

4. The photoelectronic structure element according to claim 3, wherein the reflective material is made conductive only on two opposing sides of the light source so as to contact the first terminal for supplying current.

5. The optoelectronic structure element according to claim 4, wherein the reflective material is formed to be non-conductive on the other two sides so as to be insulated from the terminals for supplying current.

6. The photoelectronic structure element according to any one of claims 1 to 5, wherein the dielectric filter is at least partially formed on layers of semiconductor elements adjacent to each other in the radial direction.

7. The photoelectronic structure element according to any one of claims 1 to 6, wherein the dielectric filter has a first region and a second region having different refractive indices, and the conversion material forms the first region.

8. The at least one semiconductor element has a second main surface facing the first main surface, The optoelectronic structure element according to any one of claims 1 to 7, wherein a reflective layer is disposed beneath the second main surface of at least one semiconductor element.

9. The photoelectronic structure element according to any one of claims 1 to 8, wherein the reflective layer is at least partially conductive and coupled to a second terminal of the at least one semiconductor element.

10. The optoelectronic structure element according to claim 8, wherein the reflective layer is electrically insulated and one or more conductive layers are disposed above and / or below the reflective layer.

11. The photoelectronic structure element according to any one of claims 1 to 10, wherein an electrically insulating first material is disposed between the reflective material and the reflective layer, and in particular the electrically insulating first material has a refractive index lower than that of the at least one semiconductor element.

12. The optoelectronic structure element according to any one of claims 1 to 11, wherein a layer with a roughened surface is disposed between the at least one semiconductor element and the dielectric filter.

13. The aforementioned photoelectronic structural element, A conversion material having an inorganic dye or quantum dots on the light-emitting surface; or A conversion material located between the dielectric filter and the semiconductor material, having an inorganic dye or quantum dots. A photoelectronic structure element according to any one of claims 1 to 12, further comprising:

14. The photoelectronic structure element according to any one of claims 1 to 13, wherein the first main surface of at least one semiconductor element has a roughened surface.

15. The optoelectronic structure element according to any one of claims 1 to 14, wherein the at least one semiconductor element has a lateral extent of at least 140 μm and / or a height of at least 5 μm.

16. The photoelectronic structure element according to any one of claims 1 to 15, wherein the at least one semiconductor element includes a plurality of semiconductor elements arranged in an array, and adjacent semiconductor elements are separated from each other by a reflective material.

17. The photoelectronic structure element according to claim 11, wherein the reflective material is conductive, and the first terminal of the semiconductor element is connected to a common external terminal via the reflective material.

18. The optoelectronic structure element according to any one of claims 1 to 17, wherein the at least one semiconductor element includes a plurality of juxtaposed semiconductor elements, and a second electrically insulating material is disposed between adjacent semiconductor elements.

19. The optoelectronic structure element according to any one of claims 1 to 18, wherein the reflective material is conductive, and a conductor track extends above and / or below and / or inside the electrically insulating second material, connecting the first terminal of the semiconductor element to a common external terminal.

20. The photoelectronic structure element according to any one of claims 1 to 19, wherein the second terminal of the semiconductor element is individually drive-controllable.

21. The photoelectronic structure element according to any one of claims 1 to 20, wherein the photoelectronic structure element further includes a lens disposed on the dielectric filter.

22. A method for manufacturing a photoelectronic structure element, A step of providing at least one semiconductor device according to any one of the preceding or following claims, having an active zone formed to generate light, A step of placing a dielectric filter on the first main surface of at least one semiconductor element, wherein the dielectric filter is formed to transmit light only in a predetermined direction, and The steps include: placing a reflective material on at least one side of the at least one semiconductor element and at least one side of the dielectric filter; Methods that include...

23. A pixel comprising a photoelectronic structural element for generating pixels of a display, The aforementioned pixel is formed from at least two subpixels, particularly two subpixels that emit light of the same color, and each subpixel is formed by a photoelectronic structure element. A sub-pixel separator is provided between two adjacent sub-pixels of the same pixel element. The sub-pixel separation element is configured to separate the electrically driven control of each sub-pixel, and is configured to optically couple with respect to the light emitted by each sub-pixel, wherein the sub-pixel separation element is configured to separate the electrically driven control of each sub-pixel, and each sub-pixel is configured to optically couple with respect to the light emitted by each sub-pixel.

24. The pixel according to claim 23, wherein the subpixels have a common epitaxial layer, and the subpixel separation element extends in a trench-like manner within the epitaxial layer in a direction laterally to the epitaxial layer plane in the main light emission direction.

25. The pixel according to claim 23 or 24, wherein the subpixels of the pixel are electrically contactable and / or driveable independently of each other.

26. The pixel according to any one of claims 23 to 25, wherein at least two of the subpixels have a common active layer separated by the subpixel separation element.

27. The pixel according to any one of claims 23 to 26, wherein the sub-pixel separation element extends to the active layer of the pixel, or extends to at least partially penetrate the pixel.

28. The pixel according to any one of claims 23 to 27, wherein the sub-pixel separation element is formed by quantum well intermixing caused by a diffused dopant, particularly in the region of the active layer.

29. The pixel according to any one of claims 23 to 28, further comprising a lens extending across the surface of the pixel.

30. A pixel according to any one of claims 23 to 29, wherein a transparent conductive layer is formed on its surface.

31. The pixel according to any one of claims 23 to 30, wherein at least one contact surface for making contact connections between at least one subpixel is provided on the surface opposite to the light-emitting surface.

32. A display arrangement structure having a plurality of pixels according to any one of claims 23 to 31, A display arrangement structure comprising a pixel element isolation layer provided between two adjacent pixels, wherein the pixel element isolation layer is configured to electrically isolate the adjacent pixels with respect to the driving control of each pixel, and to optically isolate the adjacent pixels with respect to the light emitted by the pixels.

33. The display arrangement structure according to claim 32, wherein the pixel and the associated subpixels have a common epitaxial layer, and the pixel element isolation layer extends in a trench-like manner within the epitaxial layer in a direction laterally to the epitaxial layer plane in the main light emission direction.

34. The display arrangement structure according to claim 32 or 33, wherein the trench depth d1 of the pixel element isolation layer is greater than the trench depth of the sub-pixel isolation element.

35. The display arrangement structure according to any one of claims 32 to 34, wherein the adjacent pixels or subpixels include an active layer separated by a pixel element isolation layer and / or a subpixel isolation element.

36. The display arrangement structure further includes a carrier layer having a contact region corresponding to the contact region of the pixel, and the carrier layer includes the following elements, i.e. Conductive wire for supplying current to the aforementioned pixel, Current driver circuit or supply circuit, and Control circuit for adjusting brightness A display arrangement structure according to any one of claims 32 to 35, wherein at least one of the following is provided.

37. A method for calibrating pixels, the next step being, A step of driving and controlling a subpixel of a pixel according to any one of claims 23 to 31, A step of detecting defect information in subpixels, The steps include storing the defect information in the storage unit of the control unit and Methods that include...

38. The method according to claim 37, wherein drive control, detection, and storage are sequentially performed for all individual subpixels of a pixel.

39. In an array having at least two photoelectronic structural elements, where each structural element between the n-type doped layer and the p-type doped layer forms an active zone suitable for light emission, Between two adjacently formed optoelectronic structural elements, from the n-type doped side and the p-type doped side to the cladding layer or into the cladding layer, or to the active zone or at least partially into the active zone, with a maximum thickness d c The material in the layer sequence is interrupted or removed so that a material transition zone is formed, thereby reducing the electrical and / or optical conductivity in the material transition zone. An array characterized by the following features.

40. The array according to claim 39, wherein the material transition portion has the active zone and a thin residual layer located on at least one side of the active zone.

41. The array according to claim 39 or 40, wherein the removed material is at least partially replaced with filler material.

42. The array according to any one of claims 39 to 41, wherein the removed material is at least partially replaced with a material having a relatively small band gap and thus absorbing light in the active zone.

43. The array according to any one of claims 39 to 42, wherein the removed material is at least partially replaced with a material having a high refractive index, particularly a refractive index higher than that of the doped material or filler material.

44. The array according to any one of claims 39 to 43, wherein the light-absorbing material and / or the material having a high refractive index are applied to each material transition portion.

45. The array according to any one of claims 39 to 44, wherein the material having a high refractive index is formed by diffusing or injecting a material that increases the refractive index into the filler material, particularly to each cladding layer.

46. The array according to any one of claims 39 to 45, wherein a material that enhances light absorption and / or a material that enhances electrical resistance are diffused or injected into the active zone of each material transition portion.

47. The array according to any one of claims 39 to 46, wherein at least one optical structure, in particular a photonic crystal and / or a Bragg mirror, is fabricated along the material transition portion, on the material transition portion, or within the material transition portion.

48. The array according to any one of claims 39 to 47, wherein an electrical bias is applied to the two main surfaces of the material transition portion by two mutually opposing electrical contacts, and an electric field is generated through each material transition portion.

49. The array according to any one of claims 39 to 48, wherein an electric field is generated through each material transition portion by an n-type doped material and / or p-type doped material applied to or grown on at least one surface of the two main surfaces of the material transition portion.

50. The array according to any one of claims 39 to 49, wherein the exposed main surface of the material transition portion and / or the exposed surface region of the photoelectronic structural element are electrically insulated and passivated by the respective passivation layers having silicon dioxide in particular.

51. The array according to any one of claims 39 to 50, wherein the main surface of the photoelectronic structural element is electrically connected by a contact layer.

52. The array according to any one of claims 39 to 51, wherein the material and / or material transition portion between a photoelectronic structural element and an adjacent photoelectronic structural element is formed to be different from each other, particularly depending on the direction.

53. The array according to any one of claims 39 to 52, further comprising a conversion material applied to a surface facing the main radial direction.

54. A method for manufacturing an array of photoelectron pixels, the next step being, A step of providing an overall planar layer sequence of n-type doped layers and p-type doped layers along an array, wherein an active zone suitable for luminescence is formed between them. - A step of removing at least partially the material between adjacent pixels formed from the n-type doped side and the p-type doped side, thereby achieving a maximum thickness d including the active zone. ｃ The steps include leaving the material transition region intact and reducing the electrical and / or optical conductivity between adjacent pixels. Methods that include...

55. The method according to claim 54, wherein the step of removing the material includes removing the layer sequence from the n-type doped side and the p-type doped side to or within the undoped cladding layer, or to or at least partially within the active zone.

56. The method according to claim 54, wherein the material removed from the n-type doped side and / or the p-type doped side is at least partially replaced with a filler material.

57. The method according to any one of claims 54 to 56, wherein the material removed from the n-type doped side and / or the p-type doped side is at least partially replaced with a material having a relatively small band gap and thus absorbing light in the active zone.

58. The method according to any one of claims 54 to 57, wherein the material removed from the n-type doped side and / or the p-type doped side is replaced with a material having a high refractive index, particularly a refractive index higher than that of the doped material or filler material.

59. The method according to any one of claims 54 to 58, wherein the light-absorbing material and / or the material having a high refractive index are applied to the respective material transition portions.

60. The method according to any one of claims 54 to 59, wherein the material having a high refractive index is formed in the filler material by diffusion or injection, particularly to each cladding layer.

61. The method according to any one of claims 54 to 60, wherein a material that enhances light absorption and / or a material that enhances electrical resistance are diffused or injected into the active zone from the n-type doped side and / or the p-type doped side.

62. The method according to any one of claims 54 to 61, wherein at least one optical structure, in particular a photonic crystal and / or a Bragg mirror, is fabricated along the material transition from the n-type doped side and / or p-type doped side, on or within the material transition.

63. The method according to any one of claims 54 to 62, wherein two opposing electrical contacts are formed from the n-type doped side and / or the p-type doped side, an electrical bias is applied to the two main surfaces of the material transition portion, and an electric field is generated through each material transition portion.

64. The method according to any one of claims 54 to 63, wherein an electric field is introduced through each material transition portion by an n-type doped material and / or p-type doped material applied to or grown on at least one of the two main surfaces of the material transition portion.

65. The method according to any one of claims 54 to 64, wherein the method comprises electrically insulating and passivating the exposed main surface of the material transition portion and / or the exposed surface region of the pixel with respective passivation layers having silicon dioxide in particular.

66. The method according to any one of claims 54 to 65, wherein the method includes electrically connecting the main surface of the pixel with a contact layer.

67. The method according to any one of claims 54 to 66, wherein the material and / or material transition portions between the pixel and adjacent pixels are formed to differ from each other, particularly depending on the direction.

68. The method according to any one of claims 54 to 67, wherein the step is first performed on one main surface of the array, and then performed on the other main surface of the array after substrate replacement.

69. A display arrangement structure, An IC substrate component comprising a monolithic integrated circuit and IC substrate contacts arranged in a matrix, A monolithic pixelated optochip comprising a semiconductor layer sequence having a first semiconductor layer having a first doping and a second semiconductor layer having a second doping, wherein the polarity of the charge carriers in the first semiconductor layer is different from the polarity of the charge carriers in the second semiconductor layer, and the semiconductor layer sequence defines the stacking direction. Includes, Within the aforementioned monolithic pixelated optochip, there are photoelectronic structural elements arranged in a matrix. In a display arrangement structure, each optoelectronic structural element has a back surface facing the IC substrate component and a first light source contact, the first light source contacts are adjacent to the first semiconductor layer in contact with it and are electrically connected to one of the IC substrate contacts, The projection area of ​​the first light source contact onto the back surface is at most half the area of ​​the back surface. The first light source contact is surrounded by a rear-side absorber in the lateral direction, which is perpendicular to the stacking direction. A display arrangement structure characterized by the following features.

70. The first semiconductor layer and the second semiconductor layer are 10 ４ Sm －１ Less than 3.10 ３ Sm －１ Less than 10 ３ Sm －１ The display arrangement structure according to claim 69, having a conductivity of less than p-type or n-type.

71. The display arrangement structure according to claim 69 or 70, wherein the thickness of the first semiconductor layer in the stacking direction is up to 10 times, preferably up to 5 times, the maximum diagonal of the first light source contact in the transverse direction.

72. The display arrangement structure according to any one of claims 69 to 71, wherein the pixel size of the photoelectronic structural element is greater than 100 μm, more particularly greater than 120 μm, and more particularly in the range of 200 μm to 1000 μm.

73. The display arrangement structure according to any one of claims 69 to 72, wherein the projected area of ​​the first light source contact onto the back surface corresponds to a maximum of 25%, preferably a maximum of 10%, of the area of ​​the back surface.

74. The display arrangement structure according to any one of claims 69 to 73, wherein the rear side absorber extends into the semiconductor sequence in the stacking direction.

75. A display arrangement structure according to any one of claims 69 to 74, wherein a second light source contact made of a transparent material is arranged on the second semiconductor layer of each optoelectronic structural element in the stacking direction, and the light source contact is electrically connected to a transparent contact layer on the front side of a monolithic pixelated optochip.

76. The display arrangement structure according to claim 75, wherein the second light source contact is formed by the transparent contact layer itself.

77. The display arrangement structure according to any one of claims 69 to 76, wherein the second light source contact is adjacent to a transparent contact layer, and the second light source contacts of adjacently arranged photoelectronic structural elements are separated from each other by a front-side absorber in a lateral direction perpendicular to the stacking direction.

78. The display arrangement structure according to any one of claims 69 to 77, wherein the front absorber extends in the opposite direction to the stacking direction to the second semiconductor layer, preferably into the second semiconductor layer.

79. The display arrangement structure according to any one of claims 69 to 78, wherein, with respect to the stacking direction, an optochip contact element with a larger cross-sectional area than the first light source contact is adjacent to the first light source contact.

80. The display arrangement structure according to any one of claims 69 to 79, wherein the display arrangement structure further includes an optical conversion element on the surface of the monolithic pixelated optochip.

81. A method for manufacturing a display arrangement structure, An IC substrate component comprising a monolithic integrated circuit and matrix-arranged IC substrate contacts is electrically connected to a monolithic pixelated optochip. Within the monolithic pixelated optochip, a semiconductor layer sequence is grown, having a first semiconductor layer having a first doping and a second semiconductor layer having a second doping, wherein the polarity of the charge carriers in the first semiconductor layer differs from the polarity of the charge carriers in the second semiconductor layer, and the semiconductor layer sequence defines the stacking direction. In the method, a matrix of optoelectronic structural elements is installed within the monolithic pixelated optochip, and each optoelectronic structural element has a back surface facing the IC substrate component and a first light source contact, the first light source contacts are adjacent to the first semiconductor layer in contact with each of the IC substrate contacts, The first light source contact is installed such that its projected area perpendicular to the stacking direction occupies at most half of the area of ​​the back surface. The first light source contact is surrounded by a rear-side absorber in the lateral direction, which is perpendicular to the stacking direction. A method characterized by the following features.

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